CN114267746B - Multi-junction solar cell and manufacturing method - Google Patents
Multi-junction solar cell and manufacturing method Download PDFInfo
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- CN114267746B CN114267746B CN202111565017.8A CN202111565017A CN114267746B CN 114267746 B CN114267746 B CN 114267746B CN 202111565017 A CN202111565017 A CN 202111565017A CN 114267746 B CN114267746 B CN 114267746B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 74
- 210000004027 cell Anatomy 0.000 claims abstract description 64
- 210000004457 myocytus nodalis Anatomy 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 17
- 230000005641 tunneling Effects 0.000 claims description 15
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 11
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 7
- 230000006866 deterioration Effects 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 230000009467 reduction Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 8
- 229910018516 Al—O Inorganic materials 0.000 description 4
- 230000005516 deep trap Effects 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a multi-junction solar cell and a manufacturing method thereof. In the multi-junction solar cell, the first subcell is (Al xGa1‑x)1‑yIny P cell, and the lattice constant of the first subcell is smaller than that of the second subcell, in the (Al xGa1‑x)1‑yIny P cell, the In component is reduced, the Al/Ga ratio is reduced, the band gap of the (Al xGa1‑x)1‑yIny P material is not changed, and the lattice constant of the first subcell is reduced, meanwhile, the reduction of the Al/Ga ratio can further improve the material quality and minority carrier lifetime of the (Al xGa1‑x)1‑yIny P material) In the first subcell, thereby improving the photoelectric conversion efficiency of the cell.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a multi-junction solar cell and a manufacturing method thereof.
Background
Solar cells can directly convert solar energy into electrical energy, and are one of the most effective forms of clean energy. The III-V compound semiconductor solar cell has the highest conversion efficiency in the current material system, has the advantages of good high temperature resistance, strong irradiation resistance and the like, and is recognized as a new generation of high-performance long-life space main power supply, wherein a three-junction cell with a GaInP/InGaAs/Ge lattice matching structure is widely applied in the aerospace field.
The multi-junction solar cell can realize effective absorption of a wider spectrum by stacking different band gap sub-cells in series, so that the solar cell can break through the efficiency limit of an S-Q careful balance principle to improve the photoelectric conversion efficiency. The photoelectric conversion efficiency can be continuously improved by continuously increasing the number of battery knots on the conventional three-knot product at present. Whereas if a 4-6 junction multi-junction solar cell is to be implemented, the bandgap of the first junction must be such that a 2.0-2.2eV AlGaInP subcell is used in order to achieve the desired photoelectric conversion efficiency.
However, the Al content in AlGaInP subcells, while effective in increasing the bandgap, easily introduces al—o deep level defects. The growth of aluminum-containing materials can introduce Al-O defects during epitaxial growth due to the high dissociation energy of Al-O bonds, and serve as deep level defects to increase SRH recombination, affecting material quality and minority carrier lifetime.
Disclosure of Invention
In view of the above, the present invention provides a multi-junction solar cell and a method for manufacturing the same, which comprises the following steps:
a multi-junction solar cell, the multi-junction solar cell comprising:
a substrate;
A second subcell located on one side of the substrate;
A first sub-cell located on a side of the second sub-cell facing away from the substrate;
the first subcell is (Al xGa1-x)1-yIny P cell, wherein x is more than or equal to 0 and less than 1, y is more than or equal to 0 and less than 1, and the lattice constant of the first subcell is smaller than that of the second subcell.
Preferably, in the multi-junction solar cell, the material of the second subcell may be GaAs or AlGaAs or InGaAs or AlInGaAs material.
Preferably, in the above multi-junction solar cell, the difference of the lattice constant of the second subcell minus the lattice constant of the first subcell is at least greater than 0.001nm.
Preferably, in the above multi-junction solar cell, the multi-junction solar cell further comprises:
a deterioration buffer layer between the second sub-cell and the first sub-cell;
The metamorphic buffer layer comprises at least three sub-buffer layers;
the lattice constants of any one of the sub buffer layers are different, and in the first direction, the lattice constants of at least three sub buffer layers are gradually reduced;
The first direction is perpendicular to the plane of the second sub-battery, and the second sub-battery points to the first sub-battery.
Preferably, in the multi-junction solar cell, the lattice constant of any one of the sub-buffer layers is smaller than the lattice constant of the second sub-cell.
Preferably, in the multi-junction solar cell, at least one of the sub-buffer layers has a lattice constant smaller than that of the first sub-cell.
Preferably, in the multi-junction solar cell, the material of the metamorphic buffer layer is (Al) GaInP or (Al) GaAsP.
Preferably, in the above multi-junction solar cell, the multi-junction solar cell further comprises: a first tunneling junction between the metamorphic buffer layer and the second subcell;
And the third sub-cell, the second tunneling junction and the DBR reflecting layer are sequentially stacked in the first direction and are positioned between the substrate and the second sub-cell.
Preferably, in the multi-junction solar cell described above, the first subcell includes a first pn junction made of a material of a first lattice constant;
the second subcell includes a second pn junction made of a material having a second lattice constant;
Wherein the first lattice constant is less than the second lattice constant and the second lattice constant minus the first lattice constant is at least greater than 0.001nm.
A method of fabricating a multi-junction solar cell, the method comprising:
Providing a substrate;
forming a second subcell on one side of the substrate;
forming a first sub-cell on one side of the second sub-cell away from the substrate;
the first subcell is (Al xGa1-x)1-yIny P cell, wherein x is more than or equal to 0 and less than 1, y is more than or equal to 0 and less than 1, and the lattice constant of the first subcell is smaller than that of the second subcell.
Compared with the prior art, the invention has the following beneficial effects:
The invention provides a multi-junction solar cell, which comprises a substrate, a first sub-cell and a second sub-cell. In the multi-junction solar cell, the first subcell is (Al xGa1-x)1-yIny P cell, and the lattice constant of the first subcell is smaller than that of the second subcell, in the (Al xGa1-x)1-yIny P cell, the In component is reduced, but the lattice constant of the first subcell can be reduced, but the band gap of the (Al xGa1-x)1-yIny P material is increased, in order to keep the band gap value of the (Al xGa1-x)1-yIny P material as a whole constant), the band gap of the (Al xGa1-x)1-yIny P material is further reduced by reducing the Al/Ga ratio, so that the band gap increase caused by the reduction of the In component is balanced, thereby ensuring that the band gap of the (Al xGa1-x)1-yIny P material is unchanged, and reducing the lattice constant of the first subcell, and simultaneously, the material quality and the minority lifetime of the (Al xGa1-x)1-yIny P material) In the first subcell can be further improved, so that the photoelectric conversion efficiency of the cell is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a portion of a multi-junction solar cell according to an embodiment of the present invention;
Fig. 2 is a schematic diagram of a portion of a multi-junction solar cell according to an embodiment of the present invention;
Fig. 3 is a schematic structural diagram of a multi-junction solar cell according to an embodiment of the present invention;
fig. 4 is a schematic flow chart of a method for manufacturing a multi-junction solar cell according to an embodiment of the present invention;
Fig. 5 is a schematic view of a portion of a multi-junction solar cell according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a portion of a multi-junction solar cell according to an embodiment of the present invention;
Fig. 7 is a schematic diagram of a portion of a multi-junction solar cell according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Based on the description in the background art, the three-junction solar cell in the prior art includes a first subcell, a second subcell and a third subcell, wherein the first subcell is a GaInP subcell, the second subcell is an InGaAs subcell, and the third subcell is a Ge subcell. The three subcells are lattice matched, i.e., the lattice constants are the same, and are connected by a tunneling junction. After the first subcell is replaced with an AlGaInP subcell, the photoelectric conversion efficiency can be improved, but al—o deep level defects are easily introduced. The growth of aluminum-containing materials can introduce Al-O defects during epitaxial growth due to the high dissociation energy of the Al-O bonds, and act as deep level defects to increase SRH recombination, affecting the quality of the first subcell material and minority carrier lifetime.
Based on the above-described drawbacks of the prior art, the present application provides a multi-junction solar cell comprising:
a substrate;
A second subcell located on one side of the substrate;
A first sub-cell located on a side of the second sub-cell facing away from the substrate;
the first subcell is (Al xGa1-x)1-yIny P cell, wherein x is more than or equal to 0 and less than 1, y is more than or equal to 0 and less than 1, and the lattice constant of the first subcell is smaller than that of the second subcell.
The invention provides a multi-junction solar cell, which comprises a substrate, a first sub-cell and a second sub-cell. In the multi-junction solar cell, the first subcell is (Al xGa1-x)1-yIny P cell, and the lattice constant of the first subcell is smaller than that of the second subcell, in the (Al xGa1-x)1-yIny P cell, the In component is reduced, but the lattice constant of the first subcell can be reduced, but the band gap of the (Al xGa1-x)1-yIny P material is increased, in order to keep the band gap value of the (Al xGa1-x)1-yIny P material as a whole constant), the band gap of the (Al xGa1-x)1-yIny P material is further reduced by reducing the Al/Ga ratio, so that the band gap increase caused by the reduction of the In component is balanced, thereby ensuring that the band gap of the (Al xGa1-x)1-yIny P material is unchanged, and reducing the lattice constant of the first subcell, and simultaneously, the material quality and the minority lifetime of the (Al xGa1-x)1-yIny P material) In the first subcell can be further improved, so that the photoelectric conversion efficiency of the cell is improved.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Referring to fig. 1, fig. 1 is a schematic diagram of a portion of a multi-junction solar cell according to an embodiment of the present invention.
The multi-junction solar cell includes:
A substrate 11.
A second subcell 12 located on one side of the substrate 11.
A first sub-cell 13 located on the side of the second sub-cell 12 facing away from the substrate 11.
The first subcell 13 is (Al xGa1-x)1-yIny P cell, wherein 0.ltoreq.x < 1,0 < y < 1, and the lattice constant of the first subcell 13 is smaller than that of the second subcell 12.
The substrate 11 is a Ge substrate. In the first direction L, the first subcell 13 includes a back field layer, a p-type doped base region, an n-type doped emitter region, and a window layer stacked in this order.
In the first direction L, the second subcell 12 includes a back field layer, a p-type doped base region, an n-type doped emitter region, and a window layer stacked in this order.
Alternatively, the material of the second subcell 12 may be GaAs or AlGaAs or InGaAs or AlInGaAs material.
In connection with the above embodiments, the first subcell 13 is (Al xGa1-x)1-yIny P cell, the material of the second subcell 12 may be GaAs or AlGaAs or InGaAs or AlInGaAs material, etc. here, the lattice constant of the first subcell 13 is smaller than that of the second subcell 12, meaning that the lattice constant of the Al xGa1-x)1-yIny P material in the first subcell 13 is smaller than that of the GaAs or AlGaAs or InGaAs or AlInGaAs material in the second subcell 12, instead of the lattice constant of the entire first subcell 13 being smaller than that of the entire second subcell 12.
Optionally, the difference of the lattice constant of the second subcell 12 minus the lattice constant of the first subcell 13 is at least greater than 0.001nm.
The lattice constant of the first subcell 13 is smaller than that of the second subcell 13, and the difference of the lattice constant of the second subcell 12 minus the lattice constant of the first subcell 13 is at least greater than 0.001nm and does not include 0.001nm.
Referring to fig. 2, fig. 2 is a schematic diagram of a portion of a multi-junction solar cell according to an embodiment of the present invention.
Optionally, the multi-junction solar cell further comprises: and a deterioration buffer layer 14 between the second sub-cell 12 and the first sub-cell 13.
The modified buffer layer 14 includes at least three sub-buffer layers 141.
The lattice constants of any one of the sub-buffer layers 141 are different, and in the first direction L, the lattice constants of at least three sub-buffer layers 141 gradually decrease.
The first direction L is perpendicular to the plane of the second sub-cell 12, and is directed from the second sub-cell 12 to the first sub-cell 13.
Alternatively, the material of the deterioration buffer layer 14 is (Al) GaInP or (Al) GaAsP.
Since the lattice constant of the (Al xGa1-x)1-yIny P material in the first subcell 13 is smaller than that of the GaAs or AlGaAs or InGaAs or AlInGaAs material in the second subcell 12, the (Al) GaInP or (Al) GaAsP material is used for the deterioration buffer layer 14, so that the lattice constant of the material is changed from that of the GaAs or AlGaAs or InGaAs or AlInGaAs material in the second subcell 12 to that of the (Al xGa1-x)1-yIny P material) in the first subcell 13, and the (Al) GaInP or (Al) GaAsP material is used as the material of the deterioration buffer layer 14, the band gap of the deterioration buffer layer 14 is high, so that the absorption of the buffer layer can be reduced.
It should be noted that, the modified buffer layer 14 has at least three sub-buffer layers 141, and as shown in fig. 2, the sub-buffer layers 141 may have M periods, where M is at least three.
It should be noted that, in the M periods, the lattice constants of the sub-buffer layers 141 are different, and taking the three sub-buffer layers 141 as an example, it is assumed that the first sub-buffer layer 141, the second sub-buffer layer 141, and the third sub-buffer layer 141 are stacked in order in the first direction L, the lattice constant of the first sub-buffer layer 141 is a1, the lattice constant of the second sub-buffer layer 141 is a2, and the lattice constant of the third sub-buffer layer 141 is a3, and the lattice constants a1, a2, and a3 are all different. And, in the first direction L, the lattice constant a1 > the lattice constant a2 > the lattice constant a3, and at this time, the lattice constants of the three sub-buffer layers 141 are gradually reduced in the form of an arithmetic progression in the first direction L, so that it can be made more controllable at the time of growth.
Optionally, the lattice constant of any of the sub-buffer layers 141 is smaller than the lattice constant of the second sub-cell 12.
Optionally, at least one of the sub-buffer layers 141 has a lattice constant smaller than that of the first sub-cell 13.
It should be noted that, in the M periods of the above embodiment, the lattice constant of each sub-buffer layer 141 is smaller than that of the second sub-cell 12.
In the M periods of the above embodiment, at least one sub-buffer layer 141 has a lattice constant smaller than that of the first sub-cell 13.
In at least one sub-buffer layer 141, the lattice constant is smaller than that of the first sub-cell 13, and the sub-buffer layer 141 is a stress control layer. Because the thickness of the stress regulating layer is thinner and is lower than the critical thickness of heteroepitaxial growth, the stress regulating layer is in a strain state instead of a relaxation state, so that dislocation cannot be generated to influence the performance of the device. And the thickness of the stress regulating layer is set to be thinner, so that carriers can tunnel through the stress regulating layer without forming an extra potential barrier.
In general, the lattice constant of the material of the sub buffer layer 141 at the uppermost layer of the modified buffer layer 14 is the same as that of the desired device, so that the interface between the modified buffer layer 14 and the target epitaxial material generates misfit dislocation due to residual strain on the surface of the sub buffer layer 141, which affects the performance of the device. The material of the uppermost sub-buffer layer 141 of the modified buffer layer 14 is designed to have a lattice constant smaller than that of the first sub-cell 13, so that the material exerts tensile stress on the first sub-cell 13, i.e., (Al xGa1-x)1-yIny P cell), and the compressive stress exerted on the (Al xGa1-x)1-yIny P cell) by the modified buffer layer 14 can be balanced.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a multi-junction solar cell according to an embodiment of the present invention.
Optionally, the multi-junction solar cell further comprises: a first tunneling junction 15 between the metamorphic buffer layer 14 and the second subcell 12.
Between the substrate 11 and the second subcell 12, and in the first direction L, a third subcell 16, a second tunnel junction 17, and a DBR reflective layer 18 are stacked in order.
The third subcell 16 is a Ge subcell.
In this embodiment, phosphorus diffusion is performed on the p-type Ge substrate to obtain an n-type emitter region, a pn junction of the third subcell 16 is formed, and a (Al) GaInP layer lattice-matched to the substrate 11 is grown on the p-type Ge substrate as a nucleation layer and as a window layer of the third subcell 16.
In the first direction L, the third subcell 16 includes a back field layer, a p-type doped base region, an n-type doped emitter region, and a window layer stacked in this order.
It should be noted that, the first tunneling junction 15 is used to connect the first sub-cell 13 and the second sub-cell 12, and the second tunneling junction 17 is used to connect the second sub-cell 12 and the third sub-cell 16.
The N-type layer material of the first tunneling junction 15 may be an N-type InGaAs material, an N-type GaInP material, or the like, and the P-type layer material of the first tunneling junction 15 may be a P-type (Al) InGaAs material, or the like. Wherein the doping of the N type adopts Si doping, and the doping of the P type adopts C doping respectively.
Note that the N-type layer material of the second tunnel junction 17 may be an N-type GaAs material, an N-type GaInP material, or the like, and the P-type layer material of the second tunnel junction 17 may be a P-type (Al) GaAs material, or the like. Wherein the doping of the N type adopts Si doping, and the doping of the P type adopts C doping respectively.
It should be noted that, DBR (Distributed Bragg Reflector) the reflective layer 18 is a periodic structure formed by alternately stacking two layers of different materials in the first direction L. The first layer material of the DBR reflective layer 18 may be Al xInz GaAs material, etc., and the second layer material may be Al yInz GaAs material, etc., where x ranges from 0 to 1 inclusive. For example, the value of x may be set to 0.2 or 0.5 or 0.6, or the like. y ranges from 0 to 1 inclusive. For example, the value of y may be set to 0.1 or 0.5 or 0.7, or the like. Where x < y. z ranges from 0.01 to 0.03 inclusive. For example, the value of z may be set to 0.01 or 0.02 or 0.03, or the like. The first layer and the second layer are alternately stacked in the first direction L to form the DBR reflective layer 18.
Optionally, the first subcell 13 includes a first pn-junction made of a material of a first lattice constant.
The second subcell 12 includes a second pn-junction made of a material of a second lattice constant.
Wherein the first lattice constant is less than the second lattice constant and the second lattice constant minus the first lattice constant is at least greater than 0.001nm.
The p-doped base region and the n-doped emitter region in the first subcell 13 form a first pn junction made of a material having a first lattice constant. The p-doped base region and the n-doped emitter region in the second subcell 12 constitute a second pn junction made of a material of a second lattice constant. The first lattice constant is smaller than the second lattice constant, i.e. the lattice constant of the material of the first pn-junction is smaller than the lattice constant of the material of the second pn-junction.
The difference of the second lattice constant minus the first lattice constant is at least greater than 0.001nm, and does not include 0.001nm.
Alternatively, based on all the above embodiments of the present application, in another embodiment of the present application, a method for manufacturing a multi-junction solar cell is further provided, where the method is used for manufacturing the multi-junction solar cell described in the above embodiment. Referring to fig. 4, fig. 4 is a flow chart of a method for manufacturing a multi-junction solar cell according to an embodiment of the application.
S101: as shown in fig. 5, a substrate 11 is provided.
In this step, the present embodiment is formed by growing an AlGaInP/InGaAs/Ge three-junction solar cell on a Ge substrate by using metal organic chemical vapor deposition MOCVD.
S102: as shown in fig. 6, a second subcell 12 is formed on the side of the substrate 11.
In this step, further, referring to fig. 7, fig. 7 is a schematic view of a portion of a multi-junction solar cell according to an embodiment of the present invention. Before the second subcell 12 is grown on the Ge substrate side, the third subcell 16 is grown on the Ge substrate side and phosphorus diffusion is performed on the p-type Ge substrate to obtain an n-type emitter, forming the pn junction of the third subcell 16 and serving as a nucleation layer by growing a (Al) GaInP layer lattice matched to the substrate 11 on top of the p-type Ge substrate and serving as a window layer for the third subcell 16. The third subcell is a Ge subcell.
Further, a second tunneling junction 17 is grown on the side of the third subcell 16 facing away from the substrate 11, the second tunneling junction 17 being used to connect the third subcell 16 with the second subcell 12.
Further, a DBR reflective layer 18 is grown on the side of the second tunnel junction 17 facing away from the substrate 11. The DBR reflective layer 18 is a periodic structure formed by alternately superposing two layers of different materials in the first direction L.
Further, a second subcell 12 is grown on the side of the DBR reflective layer 18 facing away from the substrate 11. The second subcell 12 is an InGaAs subcell.
S103: as shown in fig. 1, a first sub-cell 13 is formed on the side of the second sub-cell 12 facing away from the substrate 11; the first subcell 13 is (Al xGa1-x)1-yIny P cell, wherein 0.ltoreq.x < 1,0 < y < 1, and the lattice constant of the first subcell 13 is smaller than that of the second subcell 12.
In this step, referring to fig. 3, a first tunneling junction 15 is grown on the side of the second subcell 12 facing away from the substrate 11 before forming the first subcell 13 on the side of the second subcell 12 facing away from the substrate 11. The first tunneling junction 15 is used to connect the second sub-cell 12 and the first sub-cell 13.
Further, the modified buffer layer 14 is grown on the side of the first tunneling junction 15 away from the substrate 11, the modified buffer layer 14 is made of (Al) GaInP or (Al) GaAsP material, and the band gap of the modified buffer layer 14 made of (Al) GaInP or (Al) GaAsP material is high, so that absorption of the buffer layer can be reduced.
Further, a first subcell 13 is grown on the side of the modified buffer layer 14 facing away from the substrate 11, said first subcell 13 being a (Al xGa1-x)1-yIny P cell).
The above description of the multi-junction solar cell and the method for manufacturing the same provided by the invention is detailed, and specific examples are applied to illustrate the principles and embodiments of the invention, and the above examples are only used for helping to understand the method and core ideas of the invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
It should be noted that, in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described as different from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
It is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include, or is intended to include, elements inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A multi-junction solar cell, the multi-junction solar cell comprising:
a substrate;
A second subcell located on one side of the substrate;
A first sub-cell located on a side of the second sub-cell facing away from the substrate;
The first subcell is (Al xGa1-x）1-yIny P cell, wherein 0 < x <1, 0 < y <1, and the lattice constant of the first subcell is smaller than the lattice constant of the second subcell.
2. The multi-junction solar cell of claim 1, wherein the material of the second subcell is GaAs or AlGaAs or InGaAs or AlInGaAs material.
3. The multi-junction solar cell of claim 1, wherein the difference of the lattice constant of the second subcell minus the lattice constant of the first subcell is at least greater than 0.001nm.
4. The multi-junction solar cell of claim 1, further comprising:
a deterioration buffer layer between the second sub-cell and the first sub-cell;
The metamorphic buffer layer comprises at least three sub-buffer layers;
the lattice constants of any one of the sub buffer layers are different, and in the first direction, the lattice constants of at least three sub buffer layers are gradually reduced;
The first direction is perpendicular to the plane of the second sub-battery, and the second sub-battery points to the first sub-battery.
5. The multi-junction solar cell of claim 4, wherein the lattice constant of any of the sub-buffer layers is less than the lattice constant of the second sub-cell.
6. The multi-junction solar cell of claim 4, wherein at least one of the sub-buffer layers has a lattice constant less than a lattice constant of the first sub-cell.
7. The multijunction solar cell of claim 4, wherein the material of the metamorphic buffer layer is (Al) GaInP or (Al) GaAsP material.
8. The multi-junction solar cell of claim 4, further comprising:
a first tunneling junction between the metamorphic buffer layer and the second subcell;
And the third sub-cell, the second tunneling junction and the DBR reflecting layer are sequentially stacked in the first direction and are positioned between the substrate and the second sub-cell.
9. The multi-junction solar cell of claim 1, wherein the first subcell comprises a first pn junction made of a material of a first lattice constant;
the second subcell includes a second pn junction made of a material having a second lattice constant;
Wherein the first lattice constant is less than the second lattice constant and the second lattice constant minus the first lattice constant is at least greater than 0.001nm.
10. A method of fabricating a multi-junction solar cell, the method comprising:
Providing a substrate;
forming a second subcell on one side of the substrate;
forming a first sub-cell on one side of the second sub-cell away from the substrate;
The first subcell is (Al xGa1-x）1-yIny P cell, wherein 0 < x <1, 0 < y <1, and the lattice constant of the first subcell is smaller than the lattice constant of the second subcell.
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