TW200408508A - Heated substrate support - Google Patents

Heated substrate support Download PDF

Info

Publication number
TW200408508A
TW200408508A TW092127505A TW92127505A TW200408508A TW 200408508 A TW200408508 A TW 200408508A TW 092127505 A TW092127505 A TW 092127505A TW 92127505 A TW92127505 A TW 92127505A TW 200408508 A TW200408508 A TW 200408508A
Authority
TW
Taiwan
Prior art keywords
item
scope
patent application
substrate support
flat plate
Prior art date
Application number
TW092127505A
Other languages
Chinese (zh)
Other versions
TWI276511B (en
Inventor
Makoto Inagawa
Akihiro Hosokawa
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200408508A publication Critical patent/TW200408508A/en
Application granted granted Critical
Publication of TWI276511B publication Critical patent/TWI276511B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

Embodiments of the invention generally provide a substrate support for supporting a substrate. In one embodiment, a substrate support is provided that includes a plate assembly having at least a first heating element disposed therein or coupled thereto. A plurality of thermal isolators are disposed through plate assembly, defining a plurality of temperature controllable zones across the plane of the plate assembly.

Description

200408508 玖、發明說明: 【發明所屬之技術領域】 本發明之實施例係關於一 域的方法及裝置。 用以加熱一大型玻璃基材區 【先前技術】 薄膜電晶體（TFTs)以#你 )以彺係置於一大型玻璃基 板上以用於螢幕、平面顯 益太除此電池、個人數位 理（PDAs)、行動電話及類似者。而係以各種薄膜，包括 非晶型"雜及未摻雜之氧化石夕、氮化石夕以及類似者等 於群組設備之真空處理室（一妒 寻 主I叙係δ又於主要傳送室周圍）淮 行連續沉積。製作良好性暂的之θ ^ 注質的多晶矽先驅薄膜係將此等么士 構中所需的薄膜氫含量控制力百八々 " 、各置徑制在百分之一以下。為能達到如 此低的氫含量，薄膜德如、竹蚀 、俊J /儿積的熱處理溫度需約為 550度左右。 八 當使用於TFT製成的基材規模較大時(接近15平方 米的尺寸)’處理前需先預熱該等基材以盡量使基材產量提 昇。為能有效預熱該等基材，通常是將_預熱處理室輕接 至群組設備的傳送室，其可於一真空環境下預熱該等基 材。上述預熱處理室之一者係AKT公司所上市，該公司: 應用材料公司所屬位於加州聖塔克拉拉市之分公司。 一般而έ，一基材係設於該預熱處理室内數個經加熱 之基材支撐器上。該基材支撐器一般係於真空下以銅鋅合 金焊接一位於兩不鏽鋼板間之加熱元件所製。該等加熱元 200408508 件 有 基 且 用 理 基 面 降 基 間 高 可 出 製 面 超 製 當 時 使 通常至少包含一設於銅板上之耐熱性加熱器，因為銅板 良好的熱傳性，可讓加熱元件的熱橫向傳遞而使該支撐 材之支撐架表面的溫度均勻分佈。 雖然習知經加熱之基材支撐件的配置已證明係耐用 有效的’並能使置於其上之較小基材溫度均勻分佈，然 於較大基材之基材支撑器的偏斜仍是懸而未決的問題。 般係於基材支撐件的邊緣提高加熱能力以補償通過該處 室踏體的熱損失。當基材支樓件的尺寸變得較大時，該 材支撐件邊緣至中心的熱通量會因基材支撐件狹小的截 區而有所限制，基材支撐件的截面區通常會盡量狹小以 低重量，以基材堆疊密度提高。在短暫加熱期間（亦即在 材到達一穩定溫度前），此會使該基材支撐件中心及邊緣 的/JBL度梯度提南。當基材支樓件其未被支撐的邊緣溫度 於基材支撲件支撐邊緣及中心的溫度時，該基材支撐件 能會變形，因此在該基材及該基材支撐件之間的間距會 現所不願看到的改變，導致基材加熱的不均勻。 由於消費者的需求以及製程技術的進步，用於TFTs 造中的基材尺寸正快速的增加。例如，目前處理每一側 長度超過1米的基材時’便會展望能處理每一側面長度 過1.5米的基材。因此，習知基材支撐件可能無法以TFTs 程能接受的速率均勻的加熱此等較大的基材。尤其是， 該等基材的兩面長度及寬度到達並超過ι·2至1.5米 ，利用基材支撐件進行均勻加熱將成為重要的議題，以 較大基材的產量及處理品質能令人滿意。因此，業界仍200408508 (1) Description of the invention: [Technical field to which the invention belongs] Embodiments of the present invention relate to a method and device in one domain. Used to heat a large glass substrate area. [Previous technology] Thin film transistors (TFTs) are placed on a large glass substrate for display, flat screens, etc. PDAs), mobile phones and the like. Various thin films, including amorphous " doped and undoped oxidized stone oxide, nitrided stone oxide, and the like, are vacuum processing chambers of the group equipment. (Around) Huaixing deposits continuously. The production of θ ^ polycrystalline silicon precursor thin film of good quality temporarily is required to control the hydrogen content of the thin film in these MOS structures one hundred and eighty percent, and each diameter is controlled below one percent. In order to achieve such a low hydrogen content, the heat treatment temperature of the film Deru, Bamboo Etching, Jun J / Erji needs to be about 550 degrees. 8. When the substrates used for TFTs are large (close to 15 square meters in size), these substrates need to be preheated before processing to maximize the substrate output. In order to effectively preheat the substrates, it is usually to lightly connect the pretreatment chamber to the transfer room of the group equipment, which can preheat the substrates in a vacuum environment. One of the above pre-treatment chambers is listed by AKT Corporation, a company: Applied Materials' subsidiary in Santa Clara, California. Generally, a substrate is provided on several heated substrate supports in the pre-heating chamber. The substrate support is generally made by welding a heating element located between two stainless steel plates with copper-zinc alloy under vacuum. These heating elements are 200,408,508 pieces, which have a base and use a base surface to reduce the height of the base. The surface can be made over. At the time, at least one heat-resistant heater on a copper plate was usually included. Because of the good heat transfer of the copper plate, The heat of the element is transmitted laterally to uniformly distribute the temperature on the surface of the support frame of the support material. Although the configuration of the heated substrate support has been proven to be durable and effective, and can evenly distribute the temperature of the smaller substrate placed on it, the deflection of the substrate support of the larger substrate is still It is an open question. It is generally tied to the edge of the substrate support to increase the heating capacity to compensate for the heat loss through the chamber body. When the size of the base support piece becomes larger, the heat flux from the edge to the center of the base support will be limited due to the narrow section of the base support. The cross-sectional area of the base support will usually be as small as possible. Narrower with low weight and increased substrate packing density. During a brief heating period (i.e. before the material reaches a stable temperature), this causes the / JBL degree gradient of the substrate support to rise to the south. When the temperature of the unsupported edge of the substrate supporting member is at the temperature of the supporting edge and center of the substrate supporting member, the substrate supporting member can be deformed. Therefore, the temperature between the substrate and the substrate supporting member can be deformed. The pitch can change undesirably, resulting in uneven heating of the substrate. Due to consumer demand and advances in process technology, the size of substrates used in TFTs manufacturing is rapidly increasing. For example, when currently processing a substrate with a length of more than 1 meter on each side ', it is expected that a substrate with a length of more than 1.5 meters on each side will be processed. Therefore, conventional substrate supports may not be able to heat these larger substrates uniformly at a rate acceptable to TFTs. In particular, the length and width of both sides of these substrates reach and exceed ι · 2 to 1.5 meters. Uniform heating with substrate support will become an important issue, and the yield and processing quality of larger substrates can be satisfactory . Therefore, the industry still

200408508 有改善 【發明 ； 器。於 有至少 於該平 控區域 【實施 Λ 其中之 之該加 本發明 台，該 分公司 述係適 亦可用 境的處 室本體 該等基 頂部1 基材支撐件的需求。 内容】 發明之實施例係提供一 一實施例中，一基材支撐器係 一設於其中或與其耦接之加熱 用以支撐基材之基材支撐 包括一平板組件，其具 元件。數個絕熱器係設 板組件中 界定出數個遍及該平板 組件平面的溫度可200408508 There are improvements [invention; device. There is at least in the horizontal control area [implementation Λ of which the invention platform is added, the branch office is suitable for the use of the room body, the base top 1 substrate support needs. [Contents] An embodiment of the invention provides an embodiment in which a substrate supporter is a heating device provided in or coupled to the substrate support for supporting the substrate. The substrate support includes a flat plate assembly having components. A number of heat insulator system board components define a number of temperatures throughout the plane of the board component.

方式】 馬1圖係表示一經加熱基材支撐器平板組件12〇設於 加熱處理室100。一般而言，於群組設備（未示出）中 熱處理室100係用以處理較大區域之基材。較有利於 之一群組設備係ΑΚΤ公司所上市之15K PECVD平 公司為應用材料公司所屬位於加州聖塔克拉拉市之 。雖然一加熱處理室1 0 0之該平板組件i 2 〇此處描 用於預熱及/或退火較大之基材，然該平板組件12〇 於其他可加熱一基材之設備中。 亥加熱處理室100 —般至少包含一具有可控制之環 理室本體104,其中設有一可動式卡盒U0。該處理 104包括至少一可密封之基材存取埠ι〇6，以利於 材由該處理室100内的送入或取出。 亥卡盒110 —般包括數個牆體112、一底部114及一 16以界定出一内體積118。數個經加熱之基材支撐 5 200408508 平板組件120係耦接至該卡盒11〇之該等牆體ιΐ2。於第i 圖所示之該實施例中係圖示五個平板組件120。然而，應 瞭解的是該卡盒110亦可包含其他數目的平板組件12〇。 該支撐平板組件120 —般係以堆疊式平行向的排置 ;“卡孤110内，以使數個較大區域的基材可置放其 上可規則的進行加熱。該卡盒11〇的底部114係耦接至一 舉昇機構108以使一經選擇之平板組件12〇可對準該存取 埠1 0 6而便於傳送。 第2圖係表示一基材支撐器平板組件1 2 〇之一實施例 的頂部透視圖。該平板組件120 一般包括數個熱解耦（及絕 熱）之溫度控制區202ζ·，其中ζ·係正整數。界定通過每一該 支撐平板組件120的每一控制區202纟係適於調整支撐其上 之基材的熱傳送，獨立地將該熱由該等鄰近區域傳送至該 基材。 該平板組件120 —般包括至少一具有數個由一頂表 面208延伸出的間距物206。該平板2〇4 一般係由不鏽鋼、 鎳、銅、鍍鎳銅或其他合適之熱導性材料所製成。該平板 204 —般係呈矩形以支撐矩形基材ι〇2。然而，該平板2〇4 亦可製成其他形狀。 該間距物206支撐該基材1〇2使之與該平板組件ι2〇 呈一間距關係。該等間距物206亦可耦接至該卡盒丨丨〇之 該等牆體112上。該等間距物206 —般係由一材料及/或由 當搬動通過該間距物206時可避免該基材ι〇2刮痕的材料 所組成。一利於本發明進行的預熱處理室係描述於美國專 利連續案號第09/982,406，其係Hosok aw a等人於2001年 1 〇月1 7曰所申請，該文合併於此以作參考。 該溫度控制區2 0 2 i係以該平板204作界定，且一般 以絕熱器2 1 0 /分離。於描繪於第2圖之該實施例中，絕熱 器21(h係狹長地212ζ·形成於該平板204上，以讓鄰接區 域間202/的空氣間隙限制通過該平板204所橫向界定之一 平面的熱傳遞。例如，區域202/所施的熱可高於區域//2。 該佔據每一狹縫212/的空氣（或缺乏空氣的真空環境中） 實質上限制或避免了通過該狹縫的熱傳導，藉以讓區域 2 02 7以一與該基材置於其上之區域2 022不同的加熱速率 加熱該基材置放其上的部分。此可讓該機才能選擇性地遍 及其寬度作加熱，因此補償了該基材中心及邊緣間的溫度 差，致使溫度能均勻的遍及該基材之寬度部分。 該狹縫212/係經配置以讓預先界定之區域202/間絕 熱，以使該機才可以一預定方式進行加熱。例如，該等狹 縫212ζ·可設與該平板204之第一邊緣214呈平行向，且該 平板204係該卡盒11〇之牆體112未支撐部分。一般而言， 該第一邊緣214係以一矩形基材1〇2(示於第2圖中）之長 邊為方向作延伸。或者，如第3 Α-3Ε圖所示，該等狹縫可 以另一種配置界定，諸如狹縫3 12ζ•平行該平板204被支撐 之第二邊緣216、放射狀設置狹缝322/、呈線性對準排之 狹縫間隙3 3 2 ζ·、橫向及縱向狹缝3 4 2 /、3 5 2 ζ·配置為格狀、 一或多個同中心的狹缝3 6 2 ζ (或其結合）或其他方向性的配 置以讓預先定義的絕熱圖案遍及該基材支撐器平板組件， 以提供每一區域上方基材的獨立溫度控制 再回頭參看第2圖，每一區域202/ 鄰近區域202/分離。例如一區域2〇2i可 較位於該基材之中心或附近區域2〇2i/2為 邊緣，以補償該基材中心的較邊緣者為高 該等區域2 0 2 ζ· —般係以一或多個耦 板204中的加熱元件加熱。該加熱元件可 加熱器，按路線設於該等配置區域2〇2ί， 供更多熱容量（例如’至少於該等區域間， 單一區域内）。或者，一或多個區域2〇2 ζ· 元件。該等加熱元件可為電阻式加熱器、 傳遞熱流的導管，並設於其他加熱裝置之 每一區域2 0 2 ζ·的發熱係獨立控制，由該平 材的溫度均勻性會有效的提昇，且基材加 會明顯改善。此外，藉該平板組件i 2 〇而 會促進隨後處理的品質及重複性的改善， 率以使該基材達一均勻溫度的速度較習知 快。 弟4圖係該平板組件1 2 〇之該等區太 截面圖。一電阻式加熱器402係藉熱導性 對於該平板204頂部表面208的底部表面 電阻式加熱器402亦可藉其他方法耦接至 如結合、固定或緊钳等。該電阻式加熱器 每一區域2027-4。當該等狹缝212LJ分開 的溫度控制都與 能會配置以提供 多的熱量給基材 的熱量。 接至或設於該平 為一單一連續式 以於預定位置提 或選擇性地於一 可有個別的加熱 熱電裝置或用以 間。當該溫度及 板204支撐的基 熱的不均勻性亦 使基材均勻加熱 同時提昇基材產 支撐平板組件為 篆2027-3的部分 黏結劑耦接至相 404。或者，該 該平板2 0 4，例 4〇2按路線設於 該等區域2 0 2 / - 4 200408508 以讓每一區域可與該等鄰接區域分開進行熱調節，該電阻 式加熱器402的配置較習知平板组件簡單，並不需要絕熱 之加熱區域，藉以有效的降低該平板組件12〇的成本。 第5圖為一平板組件5 00之另一實施例的底部透視 圖。該平板組件500包括數個與數個絕熱器504/分離的熱 調節區域502卜該等絕熱器504/可為空氣間隙、絕熱材料 或其他可斷絕或避免該區域502/間出現熱傳遞的絕熱特 徵。 電阻式加熱器506ζ·係分別耦接至每一區域5〇2z•。每個 電阻式加熱器506/係耦接至一多輸出電源508,且控制器5 10 係藉控制師於每一電阻式加熱器506/的電源以助於每一區 域5 02ζ·的熱調節。可藉由將提供的溫度以熱電耦512丨或其 他溫度感應裝置將每一區域5 12f的溫度資訊收集在該控制 器510，憑藉該資訊而將該平板組件500支撐的基材均勻加 熱而使之維持在一預定、均勻的溫度，通常約在攝氏3〇〇至 5 20度。該等熱電耦僅示其一於第5圖中避免使該圖示顯得 過於壅塞。 第6圖係一平板組件600之另一實施例的部分截面 圖。該平板組件600包括數個熱調節區域602 z_並以絕熱器 6刀隔該等熱調節區域602 ζ· —班具有一或多個加熱元 件604z與之相耦接。該絕熱器6〇6/係一或多個經配置之狹 縫或溝槽以形成一熱阻閥門於該等鄰接區域602Z間。該實施 例係描繪於第6圖中，該等絕熱器606/至少一者係以一形成 於該平板組件6〇6/之頂部表面610的第一溝槽608界定出， 9 200408508 另者係以形成於該平板組件6 0 0之底部表面的第二溝槽 612界疋出。一窄長條616係界定於該等溝槽608、612間， 並連結於鄰接區域602ζ•，其具有相較於該平板組件6〇〇明顯 縮小的一截面區，因此限制了該等區域間的熱傳遞，藉以幫 助控制該區域進行的基材加熱。 第7圖係一平板組件7〇〇之另一實施例的部分截面 圖。該平板組件700包括數個具有一或多個加熱元件7〇4/ 與之耦接的熱調節區域702卜其並以絕熱材料7〇6ί分隔。 該等等絕熱材料係經選出以阻絕或避免該等區域· 間的熱傳遞，其並以不同材料(包括㈣、高溫塑膠、強化樹 脂或其他材料）製造而成。 第8圖係一平板組件8〇〇的另一實施例的部分截面 圖。該平板組件800包括數個熱調整區域8〇2卜其具有一或 多個與之耦接的加熱元件8〇4卜並以數個絕熱器8〇6ί分隔。 該等絕熱器806i•可縱向形成或通過該平板組件8〇〇，其可選 擇性的以絕熱材料將之填滿。 於第8圖中所描述的實施例中，該等加熱元件_，至 少包括-輕接至-頂板81〇的導f繼，用以於熱處理期間 支撐一基材。該頂板810 一般係以不鏽鋼或其他金屬所製。 一銅板812可選擇性地設於該導管8〇8及該頂板81〇間，以 強化由該導管808側向通過每一區域8〇2i•之寬度的熱傳遞。 一底板814可夾置於該導管8〇8及該頂板81〇間，且一般係 以不鏽鋼或其他剛性材料製成。 或者’如第9圖所示，該通道8〇8可藉一托_9〇2抵 10 200408508 住該頂板810。適用於本發明的一基材支撐器係描述於美國 專利案號第09/921，104，其係於2〇〇1年8月1曰所申請，全 文合併於此以作參考。 第10圖係一平板組件1〇〇〇的另一實施例之上方透視 圖，其具有數個熱解輕（亦即絕熱）溫度控制區域1〇〇2ί•。每一 控制區域1002Ζ係適於調整該平板組件1〇〇所支撐之該基材 及該等鄰近區域間的熱傳遞。 該平板組件1000係由數個平板製成，此僅簡略的以第 一邊緣平板1004、一中心平板1〇〇6以及一第二邊緣平板 1008圖示出。然而，任一數目的平板、以任何形式配置相耦 接（例如橫向式、輻射式、網柵式及類似者）皆可利用。每一 平板1004、1〇06及1008可界定出至少一溫度控制區域 1002卜通過該平板1004、1〇〇6及1〇〇8的電阻式熱傳導可當 作一絕熱器，允許每一平板1〇〇4、1〇〇6及1〇〇8可藉至少一 與之相耦接的加熱元件1010(其與鄰近平板係呈獨立）進行熱 調節。 … 以數個平板所製成的平板組件1〇〇〇因呈組件式亦可降 低成本並利於維修及保養。此外，當該平板組件每一邊緣的 尺寸超過150〇mm時，每一耦接至各平板之加熱元件 的尺寸都可維持在當時製造技術及卫具的水平，藉以加熱技 術成為實現大型平板組件的限制因素。 該等平板1004、1〇06、1008間的絕熱可藉許多方式加 強。於-例示中可降低該等平板間的接觸區域，此可藉由將 該等平板間的粗輪表面進行加卫、狹化或降低該等平板邊緣 :截面區、利用圓形凸起物1012調整該等平板的間距或其 他特微而支 s ·、、、。於另一例示中，該等平板間的絕熱可藉由於 該等平板間嵌入一絕熱材料1〇14的方式強化（如前文所 述）〇於又S 2 \ 、另一例示中，該等平板間的絕熱可藉由建立一空氣 間隙1016於該等平板間的方式強化。 斤一或多個平板1004、1006、1008亦可選擇性地劃分成 該等副區域1018ζ·。該等副區域1018/亦可藉絕熱器（如示於[Mode] The horse 1 diagram shows that a heated substrate support plate assembly 120 is set in the heat treatment chamber 100. Generally speaking, in a group equipment (not shown), the heat treatment chamber 100 is used to process a large area of a substrate. One of the more favorable group equipment is the 15K PECVD flat listed by AKT. The company is a subsidiary of Applied Materials located in Santa Clara, California. Although the plate assembly i 2 0 of a heat treatment chamber 100 is described here for preheating and / or annealing larger substrates, the plate assembly 12 is used in other equipment that can heat a substrate. The heat treatment chamber 100 generally includes at least a controllable environmental chamber body 104, which is provided with a movable cassette U0. The process 104 includes at least one sealable substrate access port 106 to facilitate the transfer of material into or out of the processing chamber 100. The Heika box 110 generally includes a plurality of walls 112, a bottom 114 and a 16 to define an inner volume 118. Several heated substrate supports 5 200408508 The flat panel assembly 120 is coupled to the walls 2 of the card box 110. In the embodiment shown in FIG. I, five flat plate assemblies 120 are illustrated. However, it should be understood that the cassette 110 may also include other numbers of flat plate assemblies 120. The support plate assembly 120 is generally arranged in a stacked parallel arrangement; "in the card isolation 110, so that a plurality of substrates of a large area can be placed thereon and can be regularly heated. The card box 110 The bottom 114 is coupled to a lifting mechanism 108 so that a selected flat plate assembly 120 can be aligned with the access port 106 for convenient transportation. FIG. 2 shows one of the substrate support flat plate assemblies 1 2 0 A top perspective view of an embodiment. The flat plate assembly 120 generally includes a plurality of thermally decoupled (and adiabatic) temperature control zones 202ζ ·, where ζ · is a positive integer. Each control zone defining each of the supporting flat plate assemblies 120 is defined. 202 is suitable for adjusting the heat transfer of the substrate supported thereon, and independently transferring the heat from the adjacent areas to the substrate. The flat plate assembly 120 generally includes at least one having a plurality of extending from a top surface 208 206. The flat plate 204 is generally made of stainless steel, nickel, copper, nickel-plated copper or other suitable thermally conductive material. The flat plate 204 is generally rectangular to support a rectangular substrate. 2. However, the plate 204 can also be made into other shapes The spacer 206 supports the substrate 102 in a spaced relationship with the flat plate assembly ι20. The spacers 206 can also be coupled to the walls 112 of the card box. The equidistant object 206 is generally composed of a material and / or a material that can prevent scratches on the substrate when it is moved through the spacer 206. A description of the pre-heating chamber which is beneficial to the present invention U.S. Patent Serial No. 09 / 982,406, which was filed by Hosok awa et al. On October 17, 2001, is incorporated herein by reference. The temperature control zone 2 0 2 i is based on the The flat plate 204 is defined, and is generally separated by a heat insulator 2 1 0. In the embodiment depicted in FIG. 2, the heat insulator 21 (h is a narrow 212ζ · is formed on the flat plate 204 so that the adjacent areas The air gap of 202 / limits the heat transfer through one of the planes laterally defined by the plate 204. For example, the area 202 / can apply more heat than the area // 2. The air (or lack of air) occupying each slot 212 / In the vacuum environment of air), the heat conduction through the slit is substantially restricted or avoided, so that the area 2 02 7 A heating rate different from the area on which the substrate is placed 2 022 heats the portion on which the substrate is placed. This allows the machine to selectively heat across its width, thus compensating for the center of the substrate And the temperature difference between the edges, so that the temperature can evenly spread across the width of the substrate. The slit 212 / is configured to insulate the pre-defined area 202 / room, so that the machine can be heated in a predetermined manner For example, the slits 212ζ may be provided parallel to the first edge 214 of the flat plate 204, and the flat plate 204 is an unsupported portion of the wall body 112 of the card box 110. Generally speaking, the first edge 214 extends from the long side of a rectangular substrate 102 (shown in Fig. 2) as a direction. Alternatively, as shown in FIG. 3 Α-3Ε, the slits may be defined in another configuration, such as slit 3 12ζ • parallel to the second edge 216 of the flat plate 204 supported, radial slits 322 /, linear Alignment of slit gaps 3 3 2 ζ ·, horizontal and vertical slits 3 4 2 /, 3 5 2 ζ · arranged in a grid pattern, one or more concentric slits 3 6 2 ζ (or a combination thereof) ) Or other directional configuration so that the pre-defined thermal insulation pattern is spread throughout the substrate support plate assembly to provide independent temperature control of the substrate above each area. Referring back to FIG. 2, each area 202 / adjacent area 202 / Detached. For example, a region 202i may be located at the center of the substrate or a nearby region 2202i / 2 as an edge, so as to compensate the edge of the substrate center is higher. These regions 2 0 2 ζ-generally a Or the heating elements in the plurality of coupling plates 204 are heated. The heating element can be a heater, and is arranged in the configuration area 2022 in order to provide more heat capacity (for example, 'at least between the areas, within a single area). Or, one or more area 202 zeta elements. These heating elements can be resistance heaters, ducts that transfer heat flow, and the heat generation of 2 0 2 ζ · in each area of other heating devices is independently controlled, and the temperature uniformity of the flat material will effectively improve, And the substrate will be significantly improved. In addition, by using the flat plate component i 2 0, the quality and repeatability of subsequent processing can be improved, so that the substrate can reach a uniform temperature faster than conventional. Figure 4 is a cross-sectional view of these areas of the flat panel assembly 120. A resistive heater 402 is thermally conductive to the bottom surface of the top surface 208 of the flat plate 204. The resistive heater 402 can also be coupled to other means such as bonding, fixing, or clamping. The resistive heater is 2027-4 per zone. When the slits 212LJ are separated, the temperature control and the heat can be configured to provide more heat to the substrate. It is connected to or arranged in the flat as a single continuous type to be lifted at a predetermined position or optionally in a thermoelectric device which can be individually heated or used. When the temperature and the non-uniformity of the base heat supported by the plate 204 also heat the base material uniformly and improve the production of the base material at the same time, the part of the supporting flat plate component 篆 2027-3 is coupled to the phase 404. Alternatively, the flat plate 204 and the example 402 are arranged in the areas 20 2 /-4 200408508 according to the route so that each area can be thermally adjusted separately from the adjacent areas. The resistance heater 402 The configuration is simpler than the conventional flat panel assembly, and does not require a heating zone for thermal insulation, thereby effectively reducing the cost of the flat panel assembly 120. Figure 5 is a bottom perspective view of another embodiment of a flat plate assembly 500. The flat plate assembly 500 includes a plurality of heat-adjusting regions 502 separated from a plurality of heat insulators 504 /. These heat insulators 504 / may be air gaps, heat-insulating materials, or other insulations that can cut off or prevent heat transfer between the regions 502 / feature. A resistance heater 506ζ · is coupled to each area 502z ·. Each resistive heater 506 / is coupled to a multi-output power supply 508, and the controller 5 10 uses the controller's power supply for each resistive heater 506 / to help each zone's thermal adjustment. . The temperature information of each region 5 12f can be collected in the controller 510 by using the provided temperature with a thermocouple 512 丨 or other temperature sensing device, and the substrate supported by the flat plate assembly 500 can be uniformly heated by virtue of the information. It is maintained at a predetermined, uniform temperature, usually between about 300 and 520 degrees Celsius. These thermocouples are only shown in Figure 5 to avoid making the illustration too congested. Fig. 6 is a partial cross-sectional view of another embodiment of a flat plate assembly 600. The flat plate assembly 600 includes a plurality of heat-adjusting regions 602 z_, and the heat-adjusting regions 602 z are separated by a heat insulator 6-the class has one or more heating elements 604z coupled thereto. The thermal insulator 60 / is one or more slits or grooves configured to form a thermal resistance valve between the adjacent regions 602Z. This embodiment is depicted in FIG. 6. At least one of the heat insulators 606 / is defined by a first groove 608 formed on the top surface 610 of the flat plate assembly 6 06 /. 9 200408508 A second groove 612 formed on the bottom surface of the flat plate assembly 600 is formed. A narrow strip 616 is defined between the grooves 608 and 612, and is connected to the adjacent area 602ζ. It has a cross-sectional area that is significantly smaller than that of the flat panel 600, thus restricting these areas. Heat transfer to help control substrate heating in this area. Fig. 7 is a partial sectional view of another embodiment of a flat plate assembly 700. The flat plate assembly 700 includes a plurality of heat-adjusting regions 702 having one or more heating elements 704 / coupled thereto and separated by a heat-insulating material 706. These insulation materials are selected to block or avoid heat transfer between these areas, and they are made of different materials, including radon, high-temperature plastic, reinforced resin, or other materials. Fig. 8 is a partial sectional view of another embodiment of a flat plate assembly 800. The flat plate assembly 800 includes a plurality of thermal adjustment regions 802, which have one or more heating elements 804 coupled thereto and are separated by a plurality of heat insulators 806. The heat insulators 806i may be formed longitudinally or through the flat plate assembly 800, which may optionally be filled with heat insulating material. In the embodiment described in Fig. 8, the heating elements _ include at least a conductive step-lightly connected to-the top plate 810 for supporting a substrate during heat treatment. The top plate 810 is generally made of stainless steel or other metals. A copper plate 812 may be selectively provided between the duct 808 and the top plate 810 to enhance the heat transfer from the duct 808 to the width of 802i • across each area. A bottom plate 814 can be sandwiched between the duct 808 and the top plate 810, and is generally made of stainless steel or other rigid materials. Alternatively, as shown in FIG. 9, the channel 808 can borrow a tray_902 to reach 10 200408508 to hold the top plate 810. A substrate support suitable for use in the present invention is described in U.S. Patent No. 09 / 921,104, which was filed on August 1, 2001, and is incorporated herein by reference in its entirety. FIG. 10 is an upper perspective view of another embodiment of a flat plate assembly 1000, which has a plurality of pyrolysis light (ie, adiabatic) temperature control regions 10002. Each control region 1002Z is adapted to adjust the heat transfer between the substrate supported by the plate assembly 100 and the adjacent regions. The flat plate assembly 1000 is made of several flat plates, which are only briefly shown by a first edge flat plate 1004, a center flat plate 1006, and a second edge flat plate 1008. However, any number of slabs, couplings configured in any form (e.g., horizontal, radial, grid, and the like) can be used. Each plate 1004, 1006, and 1008 can define at least one temperature control area 1002. The resistive heat conduction through the plate 1004, 1006, and 1008 can be used as an insulator, allowing each plate 1 004, 006, and 008 can be thermally adjusted by at least one heating element 1010 (which is independent of the adjacent flat plate system) coupled thereto. … The flat panel assembly 1000, which is made of several flat panels, can reduce costs and facilitate repair and maintenance due to its modular design. In addition, when the size of each edge of the flat plate component exceeds 150 mm, the size of each heating element coupled to each flat plate can be maintained at the level of manufacturing technology and health equipment at the time, so that the heating technology becomes a large flat plate component. Limiting factors. The thermal insulation between the flat plates 1004, 1006, and 1008 can be strengthened in many ways. In the example, the contact area between the plates can be reduced. This can be done by guarding, narrowing or reducing the edges of the rough wheels between the plates: the cross-sectional area, the use of circular protrusions 1012. Adjust the spacing or other characteristics of these plates to support s, ...,. In another example, the heat insulation between the flat plates can be strengthened by inserting a thermal insulation material 1014 between the flat plates (as described above). In another example, the flat plates Insulation can be enhanced by establishing an air gap 1016 between the plates. One or more flat plates 1004, 1006, 1008 can also be selectively divided into these sub-areas 1018ζ. These sub-areas 1018 / can also be borrowed from a heat insulator (as shown in

第丨〇圖中的該些狹縫1020)而分隔，或可藉絕熱材料或其他 特徵而分隔以限制熱傳遞，如前文所述。該等副區域1 〇 1 8/ 於該等平板内可提供溫度控制的面並不受該些平板間的溫 又控制的限制，藉以控制兩至少通過該基材平面方向的溫 度。 因此，具有數個溫度控制區域的基材支撐平板組件便 應運而生。該等溫度控制區域可提昇由該支撐平板所加熱之 基材的溫度均勻性，同時可降低加熱器複雜度以便以更經濟The slits 1020 in FIG. 10 may be separated, or may be separated by thermal insulation materials or other features to limit heat transfer, as described above. The sub-regions 108 and the surfaces that can provide temperature control in the flat plates are not restricted by the temperature and control between the flat plates, so as to control the temperature at least through the plane direction of the substrate. As a result, a substrate-supported flat panel assembly with several temperature-controlled zones came into being. The temperature control regions can improve the temperature uniformity of the substrate heated by the support plate, and can reduce the complexity of the heater in order to be more economical.

的方式製造。此外，當基材溫度均勻性提昇，處理品質及產 率亦會隨之提昇。 月’J述說明係關於本發明之較佳實施例，本發明其他以 及更進一步的實施例當於不悖離本發明之範圍下提出，且其 範圍端視下文申請專利範圍而定。 【圖式簡單說明】 為能獲取本發明之上述特徵並詳細瞭解，本發明可參考 列示於附加圖示中的較佳實施例以得更詳細的描述。然而應 12 200408508 注意的是，該等附加圖示僅係本發明之較佳實施例，並非用 以限制本發明之範圍，本發明仍容許其他等效實施例的加 入0 第1圖係表示用於支撐一例示性設於一預熱處理室中 之基材之基材支撐件平板組件的實施例。 第2圖係第1圖中該基材支撐件平板組件的上方透視 圖。 第3 A-3E圖係具有可調整溫度控制區配置之基材支撐 器平板組件的透視圖。 第4圖係第2圖中該基材支撐器平板組件的部分截面 圖。 第5圖係一基材支撐器平板組件之例一實施例的底部 透視圖。 第6圖係基材支撐器平板組件之例一實施例的底部 透視圖。 "" 第7圖係一基材支撐器平板組件之例一實施例的底部 透視圖。 、、第8圖係一基材支撐器平板組件之例一實施例的底部 透視圖。 第9圖係描述第8圖之基材支撐器平板組件一 代附件。 、1 0圖係一平板組件另一實施例的上方透視圖。 為有利於瞭解，文中已盡其所能以與圖示相同的參考數 字來表示相同的元件。 13 200408508 【元件代表符號簡單說明】 100 加熱處理室 512i 熱電耦 102 基材 600 平板組件 104 本體 602i 區域 106 基材存取埠 604i 加熱元件 108 昇舉機構 606i 絕熱器 110 卡盒 608 第一溝槽 112 牆體 ， 610 頂部表面 114 底部 612 第二溝槽 116 頂部 614 底部表面 118 内體積 616 長條物 120 平板組件 700 平板組件 202i 區域 702i 區域 204 平板 704i 加熱元件 206 間距物 706i 絕熱材料 208 頂表面 800 平板組件 210i 絕熱器 802i 區域 212i 狹縫 804 加熱元件 214 第一邊緣 806i 絕熱器 216 第二邊緣 808 導管 312i 狹縫 810 頂板 322i 輻射狀狹縫 812 銅板Way of making. In addition, as the temperature uniformity of the substrate increases, the processing quality and productivity will also increase. The description of the month's description is about the preferred embodiment of the present invention, and other and further embodiments of the present invention should be proposed without departing from the scope of the present invention, and the scope thereof depends on the scope of the patent application below. [Brief description of the drawings] In order to obtain the above features of the present invention and understand it in detail, the present invention can be described in more detail with reference to the preferred embodiments listed in the attached drawings. However, it should be noted that 20042004508 is that these additional illustrations are only preferred embodiments of the present invention, and are not intended to limit the scope of the present invention. The present invention still allows the addition of other equivalent embodiments. An embodiment of a substrate support plate assembly supporting an exemplary substrate disposed in a pre-heat treatment chamber. Fig. 2 is a top perspective view of the substrate support plate assembly of Fig. 1. Figures 3 A-3E are perspective views of a substrate support plate assembly with an adjustable temperature control zone configuration. FIG. 4 is a partial cross-sectional view of the substrate support plate assembly of FIG. 2. Fig. 5 is a bottom perspective view of an embodiment of a flat plate assembly for a substrate support. Fig. 6 is a bottom perspective view of an embodiment of a flat plate member of a substrate holder. " " Fig. 7 is a bottom perspective view of an embodiment of a flat plate member of a substrate holder. Fig. 8 is a bottom perspective view of an embodiment of a substrate support plate assembly. Figure 9 depicts the first-generation accessory of the substrate support plate assembly of Figure 8. 10 are top perspective views of another embodiment of a flat panel assembly. To facilitate understanding, the same reference numerals as shown in the figures have been used to indicate the same elements. 13 200408508 [Simple description of component representative symbols] 100 Heat treatment chamber 512i Thermocouple 102 Substrate 600 Flat panel 104 Body 602i Area 106 Substrate access port 604i Heating element 108 Lifting mechanism 606i Insulator 110 Card box 608 First groove 112 wall, 610 top surface 114 bottom 612 second groove 116 top 614 bottom surface 118 internal volume 616 strip 120 plate assembly 700 plate assembly 202i area 702i area 204 plate 704i heating element 206 spacer 706i thermal insulation material 208 top surface 800 Panel assembly 210i Insulator 802i Zone 212i Slot 804 Heating element 214 First edge 806i Insulator 216 Second edge 808 Duct 312i Slot 810 Top plate 322i Radial slit 812 Copper plate

14 200408508 332i 狹縫分段 814 底板 342i 橫向式狹縫 902 拢架 352i 縱向狹縫 1000 平板組件 362i 同中心狹縫 1002i 區域 402 加熱器 1004 第一邊緣平板 500i 平板組件 1006 中心平板 502i 區域 1008i 第二邊緣平板 504i 絕熱器 1010 加熱元件 506i 加熱器 1012 圓形凸起物 508 電源 1014 絕熱材料 510 控制器 1016 間距 1018 副區域 1020 狹縫14 200408508 332i Slit section 814 Bottom plate 342i Lateral slit 902 Shelf 352i Longitudinal slit 1000 Flat plate assembly 362i Concentric slit 1002i Area 402 Heater 1004 First edge flat plate 500i Flat plate component 1006 Central flat plate 502i Area 1008i Second Edge plate 504i Insulator 1010 Heating element 506i Heater 1012 Round protrusion 508 Power supply 1014 Insulation material 510 Controller 1016 Pitch 1018 Sub-zone 1020 Slit

1515

Claims (1)

拾、申請專利範圍： 種用以，支撐-基材之基材支撐器，其至少包含： 一平板組件，其具有一用以支撐該基材之第一表面 及一相對之第二表面； 數個絕熱器，其係設於該平板組件内並界定出數個 溫度可控制區域；以及 至少一第一加熱元件，其係設於或耦接於該平板組 件之第二表面。 2·如申請專利範圍第1項所述之基材支撐器，其中上述數 個絕熱器其中至少之一者更包含： 一狹縫’其係通過該平板組件而形成。 3·如申請專利範圍第1項所述之基材支撐器，其中上述數 個絕熱器更包含： 數個狹縫，其係通過該平板組件而形成。 4·如申請專利範圍第3項所述之基材支撐器，其中上述數 個狹缝係以排列配置。 5·如申請專利範圍第4項所述之基材支撐器，其中該等排 列之至少一者係由排成直線之狹縫所組成。 16 200408508 6·如申請專利範圍第3項所述之基材支撐器，其中上述數 個狹縫係呈網狀圖案配置。 7·如申請專利範圍第3項所述之基材支撐器，其中上述數 個狹縫係呈共中心狀配置。 8·如申請專利範圍第丨項所述之基材支撐器，其中上述數 個絕熱器之至少一者更包括： 一絕熱材料，其係置於該平板組件中。 9·如申請專利範圍第1項所述之基材支撐器，其中上述數 個絕熱器之至少一者更包括·· /冓槽’其係部分延伸通過該平板組件。 10·如申請專利範圍第1項所述之基材支撐器，其中上述數 個絕熱器之至少一者更包括： 第一溝槽，其係部分延伸通過該平板組件之第一 表面； 第一溝槽，其係部分延伸通過該平板組件之第二 表面；以及 -長條形’其係界定於該第一及第二溝槽間，用以 限制一鄰接該第-溝槽之第一溫度可控區域以及一鄰 接該第一溝槽之第二溫度可控區域間的熱傳遞。 17 200408508 11.如申請專利範圍第1項所述之基材支撐器，其中該第一 加熱7G件係由一電阻式加熱器、一熱傳遞流導管以及一 熱電裝置所組成之群組中所選出。 1 2.如申請專利範圍第1項所述之基材支撐器，其中該第一 加熱元件係為一耦接至該平板組件之第二表面的電阻式 加熱器。 13·如申請專利範圍第！項所述之基材支撐器，其中該第一 加熱元件係經配置以不同速度加熱至少兩個該等溫度可 控區域。 14·如申請專利範圍第1項所述之基材支撐器，其更包含： 一第二加熱元件，其係耦接或設於該平板組件之第 二表面，該第二加熱元件以及該第一加熱元件係適於 以不同速度加熱至少兩個該等温度可控區域。 15·如申請專利範圍第14項所述之基材支撐器，其中該第一 及第二加熱元件係為獨立控制。 16.如申請專利範圍第15項所述之基材支撐器，其更包括至 少一溫度感應裝置，其可提供該至少兩溫度可控區域之 18 200408508 一溫度公制標示。 17·如申請專利範圍第1項所述之基材支撐器，其中該 組件更包括： 數個设於一共同平板之平板，每一平板係界定 少一溫度可控區域。 18.如申請專利範圍第I?項所述之基材支撐器，其中上 少一該平板係劃分出數個溫度可控副區域。 1 9·如申請專利範圍第1 8項所述之基材支撐器，其中上 少兩該副區域係以一空氣間隙、一部分通過該平板 成之溝槽、一經縮小之接觸區域或一通過該平板而 之狹縫分隔出。 20. —種用以支撐一基材之基材支撐器，其至少包含： 一平板组件，其具有一第一表面及一相對之第 面； 數個間距物，其係設於該平板組件上，用以將 材與該第一表面維持一間距關係； 數個狹縫，其係界定於該平板中；以及 一第一加熱元件，其係設於或耦接於該 平板 出至 述至 述至 而形 形成 二表 該基 200408508 21·如申請專利範圍第20頊所述之基材支撐器，其中上述數 個狹縫係以排列配置。 22·如申請專利範圍第21項所述之基材支撐器，其中該等排 列之至少一者係由排成直線之狹缝所組成。Scope of patent application: A substrate support for supporting and supporting a substrate, which includes at least: a flat plate component having a first surface for supporting the substrate and an opposite second surface; A heat insulator is disposed in the plate assembly and defines a plurality of temperature controllable areas; and at least one first heating element is provided or coupled to the second surface of the plate assembly. 2. The substrate support according to item 1 of the scope of patent application, wherein at least one of the plurality of heat insulators further comprises: a slit 'formed by the flat plate assembly. 3. The substrate support according to item 1 of the scope of patent application, wherein the plurality of heat insulators further include: a plurality of slits formed by the flat plate assembly. 4. The substrate support according to item 3 of the scope of patent application, wherein the plurality of slits are arranged in an array. 5. The substrate support according to item 4 of the scope of patent application, wherein at least one of the arrays consists of slits arranged in a straight line. 16 200408508 6. The substrate support according to item 3 of the scope of patent application, wherein the plurality of slits are arranged in a net pattern. 7. The substrate support according to item 3 of the scope of patent application, wherein the plurality of slits are arranged in a concentric shape. 8. The substrate support according to item 丨 in the scope of the patent application, wherein at least one of the plurality of heat insulators further includes: a heat insulating material which is placed in the flat plate assembly. 9. The substrate support according to item 1 of the scope of the patent application, wherein at least one of the plurality of heat insulators further includes a ... / groove 'which extends partially through the flat plate assembly. 10. The substrate support according to item 1 of the scope of patent application, wherein at least one of the plurality of heat insulators further includes: a first groove, which partially extends through the first surface of the flat plate component; A groove extending partially through the second surface of the flat plate component; and-an elongated shape defined between the first and second grooves to limit a first temperature adjacent to the first groove Heat transfer between the controllable area and a second temperature-controllable area adjacent to the first trench. 17 200408508 11. The substrate support according to item 1 of the scope of patent application, wherein the first heating 7G member is a group consisting of a resistance heater, a heat transfer flow conduit and a thermoelectric device Elected. 1 2. The substrate support according to item 1 of the scope of patent application, wherein the first heating element is a resistive heater coupled to the second surface of the flat plate component. 13 · If the scope of patent application is the first! The substrate support of the item, wherein the first heating element is configured to heat at least two such temperature-controllable regions at different speeds. 14. The substrate support according to item 1 of the scope of patent application, further comprising: a second heating element, which is coupled to or disposed on the second surface of the flat plate component, the second heating element and the first A heating element is adapted to heat at least two such temperature-controllable regions at different speeds. 15. The substrate support according to item 14 of the scope of patent application, wherein the first and second heating elements are independently controlled. 16. The substrate support according to item 15 of the scope of patent application, further comprising at least one temperature sensing device, which can provide a temperature metric mark of 18 200408508 for the at least two temperature controllable regions. 17. The substrate support according to item 1 of the patent application scope, wherein the component further comprises: a plurality of flat plates provided on a common flat plate, and each flat plate defines a temperature-controllable area. 18. The substrate support according to item I of the patent application scope, wherein at least one of the flat plates is divided into a plurality of temperature-controllable sub-regions. 19. The substrate support according to item 18 of the scope of patent application, wherein at least two of the sub-areas are separated by an air gap, a part of the groove through the flat plate, a reduced contact area or a passage through the The plate is separated by a slit. 20. —A substrate support for supporting a substrate, comprising at least: a flat plate component having a first surface and an opposite first surface; a plurality of spacers, which are arranged on the flat plate component To maintain a distance relationship between the material and the first surface; a plurality of slits defined in the plate; and a first heating element provided or coupled to the plate to describe So far, two tables are formed. The base is 200408508. 21. The substrate support according to the 20th aspect of the patent application, wherein the above-mentioned several slits are arranged in an array. 22. The substrate support according to item 21 of the scope of patent application, wherein at least one of the arrays consists of slits arranged in a straight line. 23.如申請專利範圍第20項所述之基材支撲器’其中上述數 個狹縫係呈網狀圖案配置。 24·如申請專利範圍第20項所述之基材支樓器，其中上述數 個狹縫係呈共中心狀配置。 25.如申請專利範圍第2〇項所述之基材支撐器，其中更包含： 一絕熱材料，其係置於該等狹缝之至少一者。 26 ·如申請專利範圍第20項所述之基材支撐器，其中該等狹 縫之至少一者係部分延伸通過該平板組件。 27·如申請專利範圍第2〇項所述之基材支撐器，其中該第一 加熱元件係經配置以不同速度加熱至少兩個該等溫度可 控區域。 28·如申請專利範圍第2〇項所述之基材支撐器，其更包含一 20 200408508 獨立於該第一加熱元件而控制之第二加熱元件。 29·如申請專利範圍第20項所述之基材支擇器，其中該f板 組件更包括： 數個配置於一共同平板之平板，每一平板係界定出 至少一溫度可控區域。 30·如申請專利範圍第29項所述之基材支撐器，其中上述至 少一該平板係劃分出數個溫度可控副區域。 31·如申請專利範圍第29項所述之基材支撐器，其中上述至 少兩該副區域係以一空氣間隙、一部分通過該平板而形 成之溝槽、-經縮小之接觸區域或一通過該平板而形成 之狹縫分隔出。 32.23. The base material flapper according to item 20 of the scope of the patent application, wherein the plurality of slits are arranged in a mesh pattern. 24. The base material supporting device according to item 20 of the scope of patent application, wherein the above-mentioned several slits are arranged in a concentric shape. 25. The substrate support according to item 20 of the scope of the patent application, further comprising: a heat-insulating material placed in at least one of the slits. 26. The substrate support according to item 20 of the patent application, wherein at least one of the slits partially extends through the flat plate assembly. 27. The substrate support according to item 20 of the patent application scope, wherein the first heating element is configured to heat at least two such temperature-controllable regions at different speeds. 28. The substrate support according to item 20 of the patent application scope, further comprising a 20 200408508 second heating element controlled independently of the first heating element. 29. The substrate selector according to item 20 of the scope of patent application, wherein the f-plate assembly further comprises: a plurality of flat plates arranged on a common flat plate, and each flat plate defines at least one temperature-controllable area. 30. The substrate support according to item 29 of the scope of patent application, wherein at least one of the above-mentioned flat plates is divided into a plurality of temperature-controllable sub-regions. 31. The substrate support according to item 29 of the scope of patent application, wherein the at least two sub-regions are formed by an air gap, a part of the groove formed through the plate, a reduced contact area, or a passage through the The slit formed by the plate is separated. 32. 用以加熱-基材之加熱處理室，該處理室至少包含 一處理室本體，用以界定出一内體積； 一基材儲存卡盒，其具有數面牆體； > 平板組件’其係㈣至該等牆體並彼此 土於該内體積内，該基材平板級件各具有一驾 表面用以支撐該基材； 至少一絕熱器， 而設置並界定出數 其係通過該等平板組件之至少一者 個溫度可控區域；以及 21 200408508 至少一第一加熱元件，其係耦接至或設於每一支撐 平板組件。 33·如申請專利範圍第32項所述之加熱處理室，其中上述數 ’ 個絕熱器之至少一者更包括·· 狹縫’其係部分通過該平板組件而形成。 34·如申請專利範圍第32項所述之加熱處理室，其中上述數 個絕熱器更包括： 數個狹縫，其係通過該平板組件而形成。 35·如申請專利範圍第34項所述之加熱處理室，其中上述數 個狹縫係以排列式、網狀圖案、共中心狀或其結合方式 作配置。 36·如申請專利範圍第34項所述之加熱處理室，其中該等排 列之至乂 者係由排成直線之狹縫所組成。 37·如申請專利範圍第32項所述之加熱處理室，其中上述數 個絕熱器之至少一者更包括·· 一絕熱材料，其係置於該平板組件中。 38.如申請專利範圍第32項所述之加熱處理室，其中該第一 22 200408508 加熱元件係由一電阻式加熱器、一睿遞流導管以及一 j j 熱電裝置所組成之群組中所選出。 39·如申印專利範圍第32項所述之加熱處理室，其中該第一 加熱兀件係經配置以不同速度加熱至少兩個該等溫度可 控區域。 後如申請專利範圍第32項所述之加熱處理室，其更包括一 第二加熱元件設於或輕接於該平板組件，且其係以不同 於該第-加熱元件之加熱速度加熱該平板組件。 41. 如申請專利範圍第32項所述之加熱處理室，其更包括一 獨立於該第一加熱元件而控制之第二加熱元件。 42. 如申請專利範圍第32項所述之加熱處理室，其更包括至 少-溫度感應裝置，其可提供該至少兩溫度可控區域之 一溫度公制標示。 43·如申請專利範圍第32項所述之加熱處理室，其中該平板 組件更包括： 數個設於一共同平板之平板，每—平板係界定出至 少一溫度可控區域。 23 200408508 44·如申請專利範圍第43項所述之加熱處理室，其中上述至 少一該平板係劃分出數個溫度可控副區域。 45 ·如申请專利範圍第44項所述之加熱處理室，其中上述至 少兩該副區域係以一空氣間隙、一部分通過該平板而形 成之溝槽、一經縮小之接觸區域或一通過該平板而形成 之狹縫分隔出。 46· 一種用以控制一置於一基材支撐平板組件上之基材溫度 的方法，該方法至少包含： 加熱該基材支撐平板組件之一第一區域；以及 加熱該基材支撐平板組件之一第二區域，其係與該 第一區域完全隔熱。 47.如申請專利範圍第46項所述之方法，其中加熱該第一區 域與加熱該第二區域係為獨立控制。 48_ 一用於加熱一基材之加熱處理室，該處理室至少包含·· 一本體處理室，用以界定出一内體積； 基材支樓卡盒，其具有數面牆體； 數個支撑平板組件，其係耦接至該等牆體並彼此平 行堆疊於該内體積内，其中該等支撐平板組件之至少 者更包括一具有數個橫向分隔之熱傳遞區域，以與 24 200408508 一鄰接區域呈橫向隔絕。 49. 如申請專利範圍第4 ， 項所述之加熱處理室，其中上述每 一區更包括一捲合夕八^, 接口之刀隔板以形成該支撐平板。 50. 如申請專利範圍篦4 8項所述之加熱處理室，其中該等 域係以一單一知鈦士扯^ 〇σ 早加熟疋件進行加熱。 51. 如申請專利範圍 一區域係以一獨 第48項所述之加熱處理室 立控制之加熱元件進行加熱 其_上述每A heating processing chamber for heating-substrate, the processing chamber includes at least a processing chamber body to define an internal volume; a substrate storage card box having a plurality of walls; > a flat plate assembly 'its system ㈣ to the walls and to each other in the inner volume, each of the substrate flat plate parts has a driving surface for supporting the substrate; at least one heat insulator, and a number of sets are defined and passed through the flat plates At least one temperature-controllable area of the module; and 21 200408508 at least one first heating element, which is coupled to or disposed on each supporting flat plate module. 33. The heat treatment chamber according to item 32 of the scope of the patent application, wherein at least one of the plurality of heat insulators further includes a slit, which is formed in part by the flat plate assembly. 34. The heat treatment chamber according to item 32 of the scope of patent application, wherein the plurality of heat insulators further include: a plurality of slits formed by the flat plate assembly. 35. The heat treatment chamber according to item 34 of the scope of patent application, wherein the above-mentioned several slits are arranged in an arrangement type, a net pattern, a concentric shape, or a combination thereof. 36. The heat treatment chamber according to item 34 of the scope of application for a patent, wherein the first to the second ones are composed of slits arranged in a straight line. 37. The heat treatment chamber according to item 32 of the scope of patent application, wherein at least one of the plurality of heat insulators further includes a heat insulating material which is placed in the flat plate assembly. 38. The heat treatment chamber according to item 32 of the scope of application for a patent, wherein the first 22 200408508 heating element is selected from the group consisting of a resistance heater, a Ruidex conduit and a jj thermoelectric device . 39. The heat treatment chamber according to item 32 of the scope of application for printed patents, wherein the first heating element is configured to heat at least two such temperature-controllable regions at different speeds. The heating treatment chamber as described in item 32 of the patent application scope further includes a second heating element disposed on or lightly connected to the plate assembly, and the plate is heated at a heating speed different from that of the first heating element. Components. 41. The heat treatment chamber according to item 32 of the scope of patent application, further comprising a second heating element controlled independently of the first heating element. 42. The heat treatment chamber according to item 32 of the scope of patent application, further comprising at least a temperature sensing device, which can provide a temperature metric designation of the at least two temperature controllable regions. 43. The heat treatment chamber according to item 32 of the scope of the patent application, wherein the flat plate assembly further comprises: a plurality of flat plates arranged on a common flat plate, each of the flat plates defining at least one temperature controllable area. 23 200408508 44. The heat treatment chamber according to item 43 of the scope of patent application, wherein at least one of the above-mentioned flat plates is divided into a plurality of temperature-controllable sub-areas. 45. The heat treatment chamber according to item 44 of the scope of the patent application, wherein the at least two sub-regions are formed by an air gap, a part of the groove formed through the plate, a reduced contact area, or The formed slits are separated. 46 · A method for controlling the temperature of a substrate placed on a substrate supporting plate component, the method at least comprising: heating a first region of the substrate supporting plate component; and heating the substrate supporting plate component A second area is completely insulated from the first area. 47. The method of claim 46, wherein heating the first region and heating the second region are independently controlled. 48_ A heating processing chamber for heating a substrate, the processing chamber includes at least a body processing chamber to define an internal volume; a substrate supporting card box, which has several walls; several supports A flat panel assembly coupled to the walls and stacked within the inner volume parallel to each other, wherein at least one of the supporting flat panel assemblies further includes a heat transfer region having a plurality of lateral partitions adjacent to 24 200408508 The area is laterally isolated. 49. The heat treatment chamber as described in the item 4 of the scope of the patent application, wherein each of the above-mentioned areas further includes a roll of knife joints to form the support plate. 50. The heat treatment chamber as described in the scope of the application for patents No. 48, wherein the fields are heated with a single well-known ^ σσ pre-cooked piece. 51. According to the scope of the patent application, an area is heated by a heating control chamber as described in Item 48. 52. 如申請專利範圍第48項所述之加熱處理室 一區域係以一空氣間隙作分隔。 其中上述每 53. 申請專利範圍第48項所述之加熱處理 區域係以—材料作分隔，其中該持料 包含一鄰接區域之材料為低。 室，其尹上述每 之傳熱速度係較52. The heat treatment chamber as described in item 48 of the scope of the patent application. An area is separated by an air gap. Among them, the heat treatment area described in item 48 of the scope of each of the 53. patent applications is separated by a material, wherein the material containing the adjacent area is low. Room, the heat transfer rate of each of the above 2525
TW092127505A 2002-10-04 2003-10-03 Heated substrate support TWI276511B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/265,212 US20040065656A1 (en) 2002-10-04 2002-10-04 Heated substrate support

Publications (2)

Publication Number Publication Date
TW200408508A true TW200408508A (en) 2004-06-01
TWI276511B TWI276511B (en) 2007-03-21

Family

ID=32042417

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092127505A TWI276511B (en) 2002-10-04 2003-10-03 Heated substrate support

Country Status (3)

Country Link
US (1) US20040065656A1 (en)
TW (1) TWI276511B (en)
WO (1) WO2004034444A1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060105182A1 (en) 2004-11-16 2006-05-18 Applied Materials, Inc. Erosion resistant textured chamber surface
US7221553B2 (en) 2003-04-22 2007-05-22 Applied Materials, Inc. Substrate support having heat transfer system
US20040226513A1 (en) * 2003-05-12 2004-11-18 Applied Materials, Inc. Chamber for uniform heating of large area substrates
US20050223986A1 (en) * 2004-04-12 2005-10-13 Choi Soo Y Gas diffusion shower head design for large area plasma enhanced chemical vapor deposition
US7880122B2 (en) * 2004-07-28 2011-02-01 Joeun Technology Co., Ltd. Wafer having thermal circuit and power supplier therefor
US7430986B2 (en) 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
DE102011114949A1 (en) 2010-10-19 2012-04-19 W.E.T. Automotive Systems Ag Electrical conductor
CN102485935B (en) * 2010-12-06 2013-11-13 北京北方微电子基地设备工艺研究中心有限责任公司 Vapor chamber and substrate processing equipment applied with the vapor chamber
DE102012000977A1 (en) 2011-04-06 2012-10-11 W.E.T. Automotive Systems Ag Heating device for complex shaped surfaces
DE102011121979A1 (en) 2011-09-14 2012-11-22 W.E.T. Automotive Systems Ag Tempering equipment for use in handle piece of shifting knob of gear shift of vehicle for keeping hand of user at moderate temperature, has heating device provided with heating resistor, and strand inserted into recesses of carrier
US10201039B2 (en) 2012-01-20 2019-02-05 Gentherm Gmbh Felt heater and method of making
DE102012017047A1 (en) 2012-08-29 2014-03-06 W.E.T. Automotive Systems Ag Electric heater
US9545021B2 (en) * 2013-09-05 2017-01-10 Lee Chiang Evans Mat with cable management for electronic devices
US11302520B2 (en) * 2014-06-28 2022-04-12 Applied Materials, Inc. Chamber apparatus for chemical etching of dielectric materials
US10431435B2 (en) * 2014-08-01 2019-10-01 Applied Materials, Inc. Wafer carrier with independent isolated heater zones
DE102017001097A1 (en) 2017-02-07 2018-08-09 Gentherm Gmbh Electrically conductive foil

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4783983A (en) * 1986-11-12 1988-11-15 Mandayam Narasimhan Method and apparatus for amorphous metal slitting
JP2647799B2 (en) * 1994-02-04 1997-08-27 日本碍子株式会社 Ceramic heater and manufacturing method thereof
JP3052116B2 (en) * 1994-10-26 2000-06-12 東京エレクトロン株式会社 Heat treatment equipment
KR100245260B1 (en) * 1996-02-16 2000-02-15 엔도 마코토 Wafer heating apparatus of semiconductor manufacture device
US5656093A (en) * 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
US6035101A (en) * 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US6072163A (en) * 1998-03-05 2000-06-06 Fsi International Inc. Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
US6204483B1 (en) * 1998-07-01 2001-03-20 Intevac, Inc. Heating assembly for rapid thermal processing system
US6423949B1 (en) * 1999-05-19 2002-07-23 Applied Materials, Inc. Multi-zone resistive heater
US6765178B2 (en) * 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US20030072639A1 (en) * 2001-10-17 2003-04-17 Applied Materials, Inc. Substrate support

Also Published As

Publication number Publication date
US20040065656A1 (en) 2004-04-08
TWI276511B (en) 2007-03-21
WO2004034444A1 (en) 2004-04-22

Similar Documents

Publication Publication Date Title
TW200408508A (en) Heated substrate support
US8966940B2 (en) Process for producing glass bar
TWI324185B (en) Vacuum vapor deposition apparatus
JP4060356B2 (en) Inert gas substrate temperature control apparatus and method
US7603028B2 (en) Non-contact thermal platforms
US8092602B2 (en) Thermally zoned substrate holder assembly
US9303929B2 (en) Heat exchanger for a system for solidification and/or crystallization of a semiconductor material
TW201206845A (en) Radiation collimator for infrared heating and/or cooling of a moving glass sheet
KR20170141714A (en) Method and apparatus for controlling the thickness of a glass sheet
TW201706445A (en) Wafer boat, treatment apparatus for wafers and treatment method for wafers
CN100565785C (en) The base plate supports of being heated device
WO2012028704A1 (en) Substrate heating device
KR20140058647A (en) Method and apparatus for gas distribution and plasma application in a linear deposition chamber
KR101199954B1 (en) Boat For Processing A Substrate
US20040226513A1 (en) Chamber for uniform heating of large area substrates
KR100800504B1 (en) Heating Method and Heating Apparatus for Batch Type Reaction Chamber
JP4443525B2 (en) Method for heating plate material, heating device, and holding device for heating plate material
JP7417721B2 (en) epitaxial growth equipment
JP2530060Y2 (en) Glass plate manufacturing equipment
WO2022252709A1 (en) Epitaxial growth device
KR102087219B1 (en) Heating apparatus for chamber
JP2023533401A (en) Heating body for epitaxial growth equipment
CA2216998C (en) In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon
TW202227256A (en) Thermoforming device and thermoforming method
CN118084302A (en) Unit stress adjusting device and method for preparing substrate glass by overflow method

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees