TW200408333A - Surface insulation method for multi-layered chip-type ceramic over-voltage suppressor device - Google Patents
Surface insulation method for multi-layered chip-type ceramic over-voltage suppressor device Download PDFInfo
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200408333 五、發明說明(l) 【發明所屬之技術領域】 本發明係關於一種多> 件,特別是關於該元件表二^晶片型陶瓷過電壓抑制器元 電極可應用傳統晶片型元件 '、、巴緣之方法,使得該元件之端 層焊接介面層,使端電極且鍍製程,將端電極鍍上一 免陶免本體表面鑛上金屬好的焊接特性’同時可避 而造成產品短路失效。 【先前技術】 近年來,隨著電子產口 t^ . 座小型化、多功能及可攜式之雲 求下,電子線路之製作密度曰尹一 ^ Α 沒日盈提尚,以提升單位體積之 電路功能。此外,隨著電路功沪捭 、 节私給功此挺升,電子元件不僅性能 上需符合更高的規格要求,1盘并辨士放π人 _ ^ ^ 具與積體電路配合之高可靠性 亦為基本需求。因此,本質上屬% 貝上屬於保濩電路功能之陶瓷過 電壓抑制器,朝更大的單位體積突波吸收能力與更廣泛之 適用電壓的方向發展,是必然的結果,另因電磁干擾 (jMI)及電磁相容性(EMC)之需求下,多層陶瓷過電壓抑制 逐漸被大篁運用於電腦資訊與通訊產品之電子電路上, 另在高傳輸速度、高頻寬、高組裝密度需求、以及符合防 制規範下,使得陶瓷過電壓抑制器不僅在材料研發方面更 上一層,而可與表面實裝(SMT)線路搭配之各式規格的晶 片化等技術更促使陶瓷過電壓抑制器產業發展,尤其是多 層陶瓷製程使晶片型陶瓷過電壓抑制器之設計及製作有& I廣的發展,如多層陶瓷製程中的電極共燒就涉及陶究過 電壓抑制器之配方調整以降低燒結溫度、陶瓷過電壓抑制200408333 V. Description of the invention (l) [Technical field to which the invention belongs] The present invention relates to a plurality of components, in particular, to the element table ^ The wafer-type ceramic overvoltage suppressor element electrodes can be applied to traditional wafer-type components', The method of edge and edge makes the end layer of the component a welding interface layer, so that the terminal electrode and the plating process, the terminal electrode is plated with a ceramic-free and free of the good welding characteristics of the metal on the surface of the body, and at the same time can avoid product short-circuit failure . [Previous technology] In recent years, with the miniaturization, multi-functionality and portable cloud of electronic products, the production density of electronic circuits is called Yin Yi ^ Α is not profitable to improve the unit volume Circuit function. In addition, with the rise of circuit power and private power, electronic components not only need to meet higher specifications in terms of performance, but also must be equipped with a single driver. ^ ^ High reliability with integrated circuit Sex is also a basic need. Therefore, the ceramic overvoltage suppressor, which is essentially a circuit protection function, has a larger unit volume surge absorption capacity and a wider range of applicable voltages, which is an inevitable result. In addition, electromagnetic interference ( Under the requirements of jMI) and electromagnetic compatibility (EMC), multi-layer ceramic overvoltage suppression is gradually being applied to the electronic circuits of computer information and communication products. In addition, the requirements for high transmission speed, high bandwidth, high assembly density, and compliance Under the control regulations, ceramic overvoltage suppressors not only take the material development to the next level, but also various technologies such as chip forming that can be used with surface-mounted (SMT) circuits have promoted the development of ceramic overvoltage suppressors. In particular, the design and fabrication of wafer-type ceramic overvoltage suppressors in multilayer ceramic manufacturing processes have developed extensively. For example, electrode co-firing in multilayer ceramic manufacturing processes involves researching the formulation of overvoltage suppressors to reduce the sintering temperature, Ceramic overvoltage suppression
200408333 五、發明說明(2) 器的部份成分會與共燒之電極反應、 特性的穩定性等均是極重要的課題。 5。i組成後電氣 2第ΙΑ、1B及1C圖所示之習知多層式晶片型陶 壓抑制器,材料經陶瓷生胚薄片製作、印 電 Γ 丨刷堆疊、切宝J、 丈7〇結及端電極製作後,即形成包括:陶窨 瓦不體12、内電極 22及端電極32之結構,習用以半導體性或低絕緣性材料 本體的多層陶瓷過電壓抑制器及其他晶片型電子元件的製 造方法常採用Ag、Ag-Pd或Ag-Pd-Pt為端銀電極,為了使衣 電子元件之端電極與系統電路機板易於焊接接合/以發揮 該電子元件應有之功能,大部分之電子元件在^端電&製 作完成後,需以電鍍製程鍍上一層焊接介面層,使端電^ 具有良好的焊接特性,然而,多層陶瓷過電壓抑制器為一 半導體性材料,電鍍製程中會將電鍍之金屬^、pb —Sn或200408333 V. Description of the invention (2) Some components of the device will react with the co-fired electrode, and the stability of the characteristics is an extremely important subject. 5. After the composition of i, the conventional multi-layered wafer-type ceramic pressure suppressor shown in Figures 2A, 1B, and 1C is made of ceramic green sheets, printed electricity Γ 丨 brush stacking, cut treasure J, 77〇 junction and After the terminal electrodes are manufactured, they are composed of a ceramic tile body 12, internal electrodes 22, and terminal electrodes 32, a multilayer ceramic overvoltage suppressor used in semiconductor or low-insulation materials, and other chip-type electronic components. The manufacturing method often uses Ag, Ag-Pd or Ag-Pd-Pt as the terminal silver electrode. In order to make the terminal electrode of the electronic component and the circuit board of the system easy to be soldered / connected to perform the function of the electronic component, most of them After the electronic components are fabricated, a soldering interface layer needs to be plated in an electroplating process so that the electrical components have good soldering characteristics. However, the multilayer ceramic overvoltage suppressor is a semiconductor material. During the electroplating process, Will plate metal ^, pb —Sn or
Sn鍍在陶瓷本體上,使得該元件之兩端電極導通,導致產 品短路失效。 傳統上解決上述問題的方法疋使用含有貴重金屬的端 電極材料,使端電極無須電鍍即具有可銲錫焊接的特性, 然而此種端電極之焊接性與可罪度仍然很難達到與電鍰焊 接介面層金屬相同的焊接品質與水準。 此外,另有下列三種較重要之習用絕緣方法,可達成 端電極可電鍍,且不會將電鍍之金屬鍍在陶瓷本體上,兹 將作法及問題點分述如下: 1·歐洲專利第0806780號之方法係將多層陶瓷電子元件浸 泡於磷酸鹽水溶液中,陶瓷本體之主成份氧化鋅被酸性溶Sn is plated on the ceramic body, which makes the two ends of the element conductive, which causes the product to short-circuit failure. The traditional method to solve the above problem is to use a terminal electrode material containing precious metals, so that the terminal electrode has the characteristics of solderability without electroplating. However, the solderability and guilt of this type of terminal electrode is still difficult to achieve with the electrode. The interface layer metal has the same welding quality and level. In addition, there are the following three more important conventional insulation methods, which can achieve the terminal electrode can be electroplated, and the electroplated metal will not be plated on the ceramic body. The methods and problems are described below: 1. European Patent No. 0806780 The method is to immerse the multilayer ceramic electronic components in an aqueous phosphate solution, and the main component of the ceramic body, zinc oxide, is dissolved by acid.
第6頁 200408333 五、發明說明(3) 液溶解後, 上,形成絕 反應物濃度 亦造成製造 2·中華民國 端電極形成 製作之絕緣 覆,而降低 除電子元件 用也將限制 須低於絕緣 3.美國專利 成後,製作 接著再包覆 二次之端電 銀電極製作 雜性不利於 基於前 所欲解決之 與溶液反應生成麟酸辞沉積於陶瓷本體表面 緣之表面被覆’然此方法必須小心控制溶液的 、溫度及pH值等條件,且使用後的廢溶液處理 成本提高及環保問題。 j利第447775號之方法係於陶瓷本體形成後, 岫,於陶瓷本體上被覆一層絕緣層,然此方法 層可能造成原先外露的内電極端部被絕緣層包 電子元件之&能與可靠纟,心必須增加 兩端部絕緣層的程序,此外,絕緣層材料之選 材!之選用,因為端電極之燒附溫度必 層材料可承受的溫度上限。 ;6一23;8:雷號Λ方法係於多層陶… 第-二不n U後包覆第—層玻璃絕緣層, 弟一層不同成刀之坡璃被覆 極製作,最後進行端雷極之^之後再進灯弟 開始共進行四次埶電鍍,此方法從端 製造成本控制。 材料與製程之複 述問題及習知方法所存在 問題所在。 研失,正疋本發明 【發明内容] 《所欲解決之技術問題》 本發明主要在於解決多 完成後,需以電鍍製程鍍上 層陶瓷電子元件 層焊接介面層 之端電極製作 ’使端電極具Page 6 200408333 V. Description of the invention (3) After the liquid is dissolved, the concentration of the reactant formed also causes the manufacturing of the 2 · ROC terminal electrode to form an insulating coating, and reducing the use of electronic components will also limit the insulation below. 3. After the completion of the U.S. patent, the production of a terminal silver electrode that is then coated twice is not conducive to making a heterogeneous coating on the surface edge of the ceramic body based on the reaction with the solution to form a linthate deposited on the surface of the ceramic body. Care must be taken to control the conditions of the solution, temperature and pH, and the cost of disposal of the waste solution after use increases and environmental issues. The method of No. 447775 is that after the ceramic body is formed, 岫, the ceramic body is covered with an insulating layer. However, this method may cause the exposed internal electrode ends to be covered with an insulating layer to cover electronic components. Alas, the heart must add procedures for the insulating layer at both ends, and in addition, the material of the insulating layer is selected! It is chosen because the firing temperature of the terminal electrode must be the upper temperature limit that the material can withstand. 6-1 23; 8: The method of Thunder No. Λ is based on multilayer ceramics ... The first-second glass insulation layer is coated after the second-n n U, and the second layer is made of a different grade of glass-clad electrode. ^ Later, I enter the lamp brother and start to perform a total of four plutonium plating. This method controls the manufacturing cost from the end. The problems of restatement of materials and processes and the problems of conventional methods. The research is lost, the present invention [Content] [Technical Problem to be Solved] The present invention is mainly to solve the problem that after the completion of the process, the electroplating process needs to be plated with a layer of ceramic electronic components and a welding interface layer.
200408333 五、發明說明(4) 有良好的焊接特性,然而,多層陶瓷電子元件為一半導體 性材料,電鍍製程中會將電鍍之金屬…、Pb-Sn*Sn鍍在200408333 V. Description of the invention (4) It has good soldering characteristics. However, the multilayer ceramic electronic component is a semiconductor material. The electroplated metal will be plated in the plating process ..., Pb-Sn * Sn
陶瓷本體上,使得元件之兩端電極導通,導致產品短 效的問題。 A 《解決問題之技術手段》 ^ 本發明之技術手段主要是以玻璃、有機化合物、金屬 乳化物、金屬鹽類或其他高絕緣性材料塗佈於多層陶瓷 電,抑制器本體表面上,經熱處理後,於陶瓷本體表面形 成一絕緣層,使得元件之端電極可應用傳統晶片型元件^ ,鍍製程,將端電極鍍上一層焊接介面層,使端電極且 生,!!時可避免陶兗本體表面於後續電錢製 ^ 、屬,而造成產品紐路失效,陶瓷本體表面塗係 =雪製程可於陶瓷本體燒結前;或陶瓷本體燒結後、 2極製作前;或陶:是本體燒結及端電極製作後、電鍍前 日# 卜知電極衣作别之陶瓷本體表面進行絕緣層塗佈 使後:ϊΐ原t外露的内電極端部因表面絕緣層阻隔,致 T丰=衣作之端電極無法與内電極電性導通,本發明之技 要是應用浸敍法及熱處理法使内電極端部向4 (t,保内電極與端電極形成良好的電性導通。 《對先前技術之功效》 1所ΪΪ於ίΐϊ術,本發明之絕緣方法具有以下優點: 2.陶究本體表面具有平坦化的效果,可=錫製程之後On the ceramic body, the electrodes at both ends of the component are turned on, which causes the problem of short-lived products. A "Technical means to solve the problem" ^ The technical means of the present invention is mainly coated with glass, organic compounds, metal emulsions, metal salts or other highly insulating materials on the surface of the multilayer ceramic electric, and the body of the suppressor, after heat treatment After that, an insulating layer is formed on the surface of the ceramic body, so that the terminal electrodes of the element can be applied to traditional wafer-type components ^, in the plating process, the terminal electrodes are plated with a soldering interface layer, so that the terminal electrodes are alive. The surface of the body is in the subsequent electric system ^, which causes the product to fail. The coating system of the ceramic body = snow process can be before the ceramic body is sintered; or after the ceramic body is sintered and before 2 poles are made; After the end electrodes are made, the day before electroplating # Buzhi electrode clothing is coated with an insulating layer on the surface of other ceramic bodies. After: ϊΐ 原 t exposed internal electrode ends are blocked by the surface insulating layer, causing T Feng = the end electrode of the clothing It cannot be electrically connected to the internal electrode. The technique of the present invention is to apply the dipping method and the heat treatment method to make the end of the internal electrode to 4 (t, the internal electrode and the terminal electrode form a good electrical conduction. For the effectiveness of the prior art, the insulation method of the present invention has the following advantages: 1. The surface of the ceramic body has a flattening effect, which can be equal to that after the tin process.
200408333200408333
五、發明說明(5) 助銲劑的清洗效果,避免因助銲劑殘留而提升漏電流, 成產品失效; 3.本發明之内電極端部向外伸展之方法,可確保内電極盘 端電極形成良好的電性導通,不需增加元件兩端部絕緣層 4.陶瓷本體表面絕緣層之熱處理製程可和端電極之燒附製 程合併實施,亦可和陶瓷本體之燒結製程合併實施。 【實施方式】 本發明主要是以玻璃、有機化合物、金屬氧化物、金 屬鹽類或其他高絕緣性材料塗佈於多層陶瓷過電壓抑制器 本體表面上,經熱處理後,於陶瓷本體表面上形成一絕緣 層,使得元件之端電極可應用傳統晶片型元件之電鑛製、、 ,,將端電極鍍上一層焊接介面層,使端電極具有^好的 ^接特性’同時可避免陶瓷本體表面於後續電鑛製程中梦 上金屬,使得元件之兩端電極導通,導致產品短路失效、; 陶竟本體表面塗佈絕緣層之製程可於陶瓷本體燒結前;或 陶究本體燒結後、端電極製作前;或陶瓷本體燒結及端電 拖製作後、電鍍前實施,其具體實施方法詳述如下·· —、陶瓷本體燒結前塗佈絕緣層 將尚未燒結的多層陶瓷生胚整體表面塗佈一層玻璃、 有機化合物、金屬氧化物、金屬鹽類或其他高絕緣性材 料,厚度約1〜1 0 0 // m,然後再進行燒結製程,燒結後之 半導體性陶兗本體表面即形成一層絕緣層。V. Description of the invention (5) The cleaning effect of the flux, to avoid the leakage current caused by the flux residue, and the failure of the product; 3. The method of extending the inner electrode end outwardly according to the present invention can ensure the formation of the inner electrode end electrode Good electrical continuity without the need to increase the insulation layer at both ends of the component. 4. The heat treatment process of the surface insulation layer of the ceramic body can be combined with the firing process of the terminal electrodes, or it can be combined with the sintering process of the ceramic body. [Embodiment] The present invention is mainly coated on the surface of the multilayer ceramic overvoltage suppressor body with glass, organic compounds, metal oxides, metal salts or other highly insulating materials, and is formed on the surface of the ceramic body after heat treatment. An insulation layer makes the terminal electrode of the component can be applied to the traditional wafer-type components of electro-mineralization. The terminal electrode is plated with a soldering interface layer to make the terminal electrode have good connection characteristics and avoid the surface of the ceramic body. In the subsequent power mining process, dreaming of metal makes the two ends of the component conductive, which causes the product to short-circuit failure; the process of coating the ceramic layer on the surface of the ceramic body before the ceramic body is sintered; or after the ceramic body is sintered, the terminal electrode Before fabrication; or after ceramic body sintering and terminal dragging are made, and before electroplating, the specific implementation method is detailed as follows: Coating the insulating layer before the ceramic body sintering The entire surface of the multilayer ceramic green embryo that has not been sintered is coated with a layer Glass, organic compounds, metal oxides, metal salts or other highly insulating materials, with a thickness of about 1 ~ 1 0 0 // m, and then After the sintering process, an insulating layer is formed on the surface of the semiconductor ceramic pot body after sintering.
200408333 五、發明說明(6) 一、陶瓷本體燒結後、端電極製作前塗佈絕緣層 將燒結後、端電極製作前之陶瓷本體表面塗佈— 璃、有機化合物、金屬氧化物、金屬鹽類或其他高絕 材料,厚度约1〜200 Μ,經熱處理後,陶莞本體表面緣性 f導體性陶瓷材料與表面塗佈材料反應形成一絕緣層。 二、陶瓷本體燒結及端電極製作後、電鍍前塗佈絕緣屑 _多層陶瓷元件完成燒結製程及端電極製作後、電: 刖,於元件整體表面塗佈一層玻璃、有機化合物、金 化物至屬鹽類或其他向絕緣性材料,厚度約1〜5 Q”氧 ^熱處理後,陶瓷本體表面之半導體性陶瓷材料與表^, ^材料反應形成-絕緣層,端電極表面之塗佈材料於^ =程中溶入或混入端電極金屬+,並不影響後續之·電J l程、以及電流導通。 、電錢 針對上述 絕緣塗佈,可 隔,致使後續 此,需使内電 成良好的電性 有二: 1 ·陶瓷本體燒 值及浸泡時間 屬因較耐浸蝕 2 ·内電極含有 六個表面進行 表面絕緣層阻 性導通,因 極與端電極形 外伸展之方法 元件端電極製作前之陶瓷本體 能使原本外露的内電極端部因 製作之端電極無法與内電極電 極端部向外伸展,以確保内電 導通,本發明之内電極端部向 結後,經酸或鹼液浸泡,控制 ’使得陶瓷本體表面受浸蝕内 ’而形成内電極端部凸出於陶 銀或銀合金成份,於表面塗佈 酸或驗液之pH 縮,内電極金 竟本體外。 絕緣層及製作200408333 V. Description of the invention (6) I. Coating the insulating layer after the ceramic body is sintered and before the terminal electrode is made Coating the surface of the ceramic body after sintering and before the terminal electrode is made—glass, organic compounds, metal oxides, metal salts Or other high-insulation material, with a thickness of about 1 ~ 200 μm. After heat treatment, the surface f ceramic conductive material on the surface of Tao Wan body reacts with the surface coating material to form an insulating layer. 2. After the ceramic body is sintered and the terminal electrode is made, before the plating is coated with insulation scraps_ After the sintering process of the multilayer ceramic element is completed and the terminal electrode is made, the electricity: 刖, apply a layer of glass, organic compounds, and metal compounds on the entire surface of the element Salt or other insulating materials with a thickness of about 1 ~ 5 Q ”oxygen ^ After heat treatment, the semiconductor ceramic material on the surface of the ceramic body reacts with the surface ^ and ^ materials to form an insulating layer, and the coating material on the surface of the terminal electrode is ^ = The terminal electrode metal + is dissolved or mixed in the process, and it does not affect the subsequent electrical and electrical processes, and the current conduction. The electric money can be isolated for the above insulation coating, so that the internal electricity needs to be made into good electrical properties. There are two: 1. The burning value and soaking time of the ceramic body are relatively resistant to erosion. 2. The internal electrode contains six surfaces for resistive conduction of the surface insulation layer. Because the electrode and the terminal electrode are extended outward, the component is made of ceramic before the terminal electrode is produced. The body can make the originally exposed end of the internal electrode unable to extend outward from the end of the internal electrode electrode to ensure the internal electrical conduction, and the end of the internal electrode of the invention faces the junction. After being soaked with acid or alkali, the surface of the inner electrode is controlled to make the ceramic body surface eroded, and the end of the inner electrode is protruded out of the ceramic silver or silver alloy component. The surface is coated with acid or test solution to reduce the pH. The body. Insulation and production
第10頁 200408333 五、發明說明(7) " 端電極之後’再施以250 °C以上之熱處理,内電極之金屬 銀因文到端電極中銀成份的牽引而向外伸展。 實施例: 上述大致說明本發明,以下將配合具體的較佳實施例 更詳細說明本發明,因此可進一步了解本發明。 實施例一: 本實施例係於陶瓷本體 所示,材料經過陶瓷生胚薄 含陶瓷本體10與内電極20的 別元件生胚表面塗佈一層主 4 0,該塗料層乾燥後之厚度 與其表面塗佈層一起進行燒 用之燒結製程條件,燒結後 包含燒結後之陶瓷本體丨2、 曼本體表面材料於燒結過程 接著,該元件端部塗附 示,原本外露的内電極22端 而阻隔内電極22端部與端電 需實施50 0 °C以上之熱處理 電極32中之銀成份的牵引而 通,如第2D圖所示,若選擇 製程使内電極2 2端部向外伸 燒結前塗佈絕緣層,如第2 A圖 片製作、印刷堆疊及切割成包 單一元件生胚等過程後,將個 要成份為硼-矽之玻璃塗料層 約為20〜30 //m,將元件生胚 結’燒結條件採用元件原本使 即形成如第2 B圖所示之結構, 内電極22、及玻璃塗料層與陶 中反應生成的表面絕緣層6〇。 端電極及燒附後,如第2C圖所 部可能殘留少量玻璃塗料8 0, 極30之間的電性導通,因此, 内電極22中之金屬銀受到端 向外伸展,形成良好的電性導 適當的端電極材料,該熱處理 展的實施程序可和端電極的燒 200408333 五、發明說明(8) '----- 附製程合併實施而得到相同的效果。 ^以上程序完成後,該元件可經由傳統晶片型元件之後 續電鑛製程而得到正常的電鍍效果,端電極之間的陶瓷本 體表面經絕緣處理後,不會錢上金屬。 實施例 本 緣層, 後,即 極2 2, 化物混 如第3B 物混合 成的表 接 示,原 料8 0, 因此, 受到端 性導通 處理製 緣層熱 的效果 以 實施例係於陶竟本體燒結後、端t極製作前塗佈絕 材:經陶甍生胚薄片製作、印刷堆疊、切割及燒結 =如第3A圖所示之結構,包含陶竟本㈣與内電 將燒結後的元件塗佈一層主要成份為鋅_硼_矽之氧 合塗料層,再實施5〇(TC至85(rc之熱處理,即形成 示之結構,包含陶竟本體12、内電㈣及氧化 塗料層與陶瓷本體表面材料於熱處理過程中反應生 面絕緣層6 0。 著,該元件端部塗附端電極及燒附後,如第3c圖所 本外露的内電極22端部可能殘存少量氧化物混合塗 而阻隔内電極22端部與端電極3〇之間的電性導通, 需實施500 °C以上之熱處理,内電極22中之金屬銀 電極32中銀成份的牽引而向外伸展,形成良好的電 ’如第3D圖所示,若選擇適當的端電極材料,該熱 程使内電極22端部向外伸展的實施程序可和表面絕 處理及端電極之燒附製程同時合併實施而得到相同 〇 上程序完成後,該元件可經由傳統晶片型元件之後Page 10 200408333 V. Description of the invention (7) " After the terminal electrode 'is subjected to a heat treatment of more than 250 ° C, the metal silver of the internal electrode is stretched outward due to the pulling of the silver component in the terminal electrode by the text. Examples: The above generally describes the present invention. The present invention will be described in more detail with reference to specific preferred embodiments, so that the present invention can be further understood. Example 1: This example is shown in the ceramic body. The material passes through a ceramic green embryo, and the surface of other green embryos containing the ceramic body 10 and the internal electrode 20 is coated with a main layer 40. The thickness of the dried coating layer and its surface The sintering process conditions for firing the coating layer together. The sintered ceramic body is included after sintering. 2. The surface of the man body is sintered. Next, the end of the element is shown with the inner electrode 22 that was originally exposed and blocks the inside. The end of the electrode 22 and the end of the electricity need to be pulled through the silver component of the heat treated electrode 32 above 50 ° C. As shown in Figure 2D, if the process is selected so that the end of the inner electrode 22 is extended outward and sintered before coating Cloth insulation layer, such as the 2A picture making, printing stacking and cutting into single element green embryo, etc., the glass coating layer with boron-silicon as the main component is about 20 ~ 30 // m. In the sintering condition, the element is originally formed into a structure as shown in FIG. 2B, and the internal electrode 22 and the surface insulating layer 60 formed by the reaction between the glass coating layer and the ceramic are formed. After the terminal electrode and firing, a small amount of glass coating 80 may remain as shown in FIG. 2C, and electrical conduction between the electrodes 30 may occur. Therefore, the metal silver in the internal electrode 22 is extended outward to form a good electrical property. Guide the appropriate terminal electrode material. The implementation procedure of this heat treatment exhibition can be combined with the terminal electrode sintering 200408333. V. Description of the invention (8) '----- The combined process is implemented to obtain the same effect. ^ After the above procedure is completed, the element can be passed through the conventional wafer-type element and subsequent electro-mineralization process to obtain the normal plating effect. After the surface of the ceramic body between the terminal electrodes is insulated, no metal will be deposited. In the embodiment, the edge layer, that is, the pole 22, is mixed with the compound as shown in 3B, and the raw material is 80. Therefore, the effect of the heat of the edge layer subjected to the terminal conduction treatment is tied to Tao Jing in the example. After the body is sintered and before the end of the t-pole is coated, it is coated with the insulation material: made of ceramic green sheet, printed and stacked, cut, and sintered = the structure shown in Figure 3A, including Tao Jingben and internal electricity to coat the sintered components Lay a layer of zinc-boron-silicon oxygen coating layer, and then perform a heat treatment of 50 (TC to 85 (rc), that is, the structure shown is formed, including ceramic body 12, internal galvanic oxide, and oxide coating layer and ceramic The surface material of the body reacts with a surface insulating layer 60 during the heat treatment. After this, the end of the element is coated with a terminal electrode and fired, and a small amount of oxide may remain on the end of the exposed internal electrode 22 as shown in Figure 3c. In order to block the electrical conduction between the end of the internal electrode 22 and the terminal electrode 30, a heat treatment above 500 ° C is required. The silver component of the metal silver electrode 32 in the internal electrode 22 is pulled outward and stretched out to form a good electricity. 'As shown in Figure 3D, The implementation process of the end electrode material, the thermal process of extending the end of the inner electrode 22 outward can be combined with the surface insulation treatment and the end electrode firing process at the same time to achieve the same. After the above procedures are completed, the component can be passed through the traditional wafer After the type element
200408333200408333
常==屬端電極之間…本 實施例三: 後、端電極製作前塗佈絕 、印刷堆疊、切割及燒結 ’包含陶兗本體12與内電 /包於0· 5%HC1水溶液中1分 内縮,使得内電極22端部 ’將處理後的元件塗佈_ 料層,接著實施5〇〇。〇至 圖所示之結構,包含陶究 與陶瓷本體表面材料於執 層 60。 、“、、 極及燒附後,如第4D圖所 端部和端電極32之間具有 絕緣層熱處理製程可和端 相同的效果。 本實施例係於陶瓷本體燒結 緣層,材料經陶瓷生胚薄片製作 後,即形成如第4A圖所示之結構 極22 ’然後將該燒結後的元件浸 鐘’由於陶瓷本體12受到浸蝕而 向外凸出,如第4B圖所示,其次 層主要成份為辞-删-碎之玻璃塗 70 0 °C之熱處理,即形成如第4C 本體1 2、内電極2 2及玻璃塗料層 處理過程中反應生成的表面絕緣 接著,該元件端部塗附端電 示’原先已向外裸露的内電極22 良好的電導通特性,上述之表面 電極的燒附製程合併實施而得到 士以上程序完成後,該元件可經由傳統晶片型元件之 續電鍍製程而得到正常的電鍍效果,端電極之間的陶究 體表面經絕緣處理後’不會鍵上金屬。 實施例四: 本實施例係於元件完成燒結製程及端電極製作後、電Often == between the terminal electrodes ... this third embodiment: coating, printing, stacking, cutting and sintering before and after the terminal electrodes are produced, including the ceramic body 12 and internal electricity / encapsulated in 0 · 5% HC1 aqueous solution 1 It is internally contracted so that the end portion of the internal electrode 22 'applies a layer after the processing to the material layer, and then implements 500. 〇 to the structure shown in the figure, including ceramics and ceramic body surface material on the layer 60. After the ",", and the electrode are attached, as shown in Figure 4D, there is an insulating layer heat treatment process between the end and the end electrode 32. The process can have the same effect as the end. This embodiment is based on the sintered edge layer of the ceramic body. After the embryo sheet is manufactured, the structure pole 22 shown in FIG. 4A is formed, and then the sintered component is immersed in the bell. As the ceramic body 12 is etched, it protrudes outward, as shown in FIG. 4B, and the second layer is mainly The composition is the heat treatment of 70- ° C glass-deleted-broken glass coating, which forms the surface insulation produced by the reaction of the 4C body 1 2, the internal electrode 2 2 and the glass coating layer. Then, the end of the component is coated. The terminal end shows that the internal electrodes 22 which had been exposed to the outside have good electrical conduction characteristics. After the above-mentioned surface electrode firing process is combined and implemented to obtain more than the above procedures, the component can be passed through the conventional electroplating process of conventional wafer-type components. A normal electroplating effect is obtained, and the surface of the ceramic body between the terminal electrodes is not bonded to metal after the insulation treatment. Embodiment 4: This embodiment is performed after the components are sintered and the terminal electrodes are manufactured.
第13頁 200408333 五、發明說明(10) 鑛之前塗佈絕緣層’元件經傳統之積層晶片型元件製程 後、電鍍之前得到如第5A圖所示之結構,包含陶瓷本體 12、内電極22及端電極32,接著將該元件表面塗佈一芦主 要成份為鉛-辞-硼-矽之玻璃塗料層4〇,如 曰, 然後實施500 °C至700 t之埶卢谉 ^ ^ ^ u | 丁 構,包含陶究本體12?:=;[::=第5C圖所示結 鬥电極“、端電極32以及祐癌泠M 層與陶竞本體表面材料於熱處理過 枓 混入端電極金屬中,端㊁= 於熱處理過程中溶入或 表面絕緣層之熱處理製程可好的導電特性, 而得到相同的效果。 了孝鈿電極的燒附製程合併實施 以上程序完成後,該元件 續電鐘製程而得到正常的電鍍效果片型元件之後 體表面經絕緣處理後,不會鍍上金知電極之間的陶竟本 以上所述者,僅為用以^ 已右並非企圖據以對本創作作任^ ^較佳實施例而 :有創作精神下所作有關本^::制’是以, 為本創作申請專利範圍所涵蓋。乍之任何修飾或變 第14頁 200408333 圖式簡單說明 第1A圖為習知多層式晶片型陶瓷過電壓抑制器元件之平面 示意圖; 第1 B圖為第1 a圖所示之習知多層式晶片型陶瓷過電壓抑制 器元件縱方向之剖面結構圖; 第1 C圖為第1 a圖所示之習知多層式晶片型陶瓷過電壓抑制 器元件横方向之剖面結構圖; 第2 A圖為本發明之多層式晶片型陶瓷過電壓抑制器元件第 一實施例,陶瓷本體燒結之前,表面塗佈一層玻璃塗料層 之剖面結構示意圖;Page 13 200408333 V. Description of the invention (10) The structure of the insulating layer before coating is applied after the traditional multilayer wafer type component manufacturing process, and the structure shown in FIG. 5A is obtained before plating, including the ceramic body 12, the internal electrode 22 and The terminal electrode 32 is then coated on the surface of the element with a glass coating layer 40 whose main component is lead-b-boron-silicon, as described above, and then performed at 500 ° C to 700 t. ^ ^ ^ U | Ding Gou, including the Tao study body 12?: =; [:: = Figure 5C knot electrode ", terminal electrode 32 and the layer of Youcanling M and Tao Jing body surface material mixed into the terminal electrode metal after heat treatment In the end, ㊁ = the heat conduction process dissolved in or heat-treated on the surface insulation layer during the heat treatment process can have good conductive properties, and the same effect is obtained. After the firing process of the filial piezo electrode is combined with the implementation of the above procedures, the device continues to run the clock After the manufacturing process to obtain a normal plating effect of the chip-type components, the body surface will not be plated with the ceramics between the gold electrodes after the insulation treatment. The above description is only for the purpose of ^ already. Any ^ ^ preferred embodiment and: creative The following about this ^ :: system is to cover the scope of the patent application for this creation. Any modification or change on page 14 200408333 Brief description of the diagram Figure 1A is a conventional multilayer chip type ceramic overvoltage suppressor A schematic plan view of the element; FIG. 1B is a longitudinal cross-sectional structural view of a conventional multilayer wafer type ceramic overvoltage suppressor element shown in FIG. 1a; FIG. 1C is a conventional view shown in FIG. 1a A cross-sectional structural view of a multilayer wafer-type ceramic overvoltage suppressor element in a transverse direction; FIG. 2A is a first embodiment of the multilayer wafer-type ceramic overvoltage suppressor element of the present invention. Before the ceramic body is sintered, a surface is coated with glass Schematic diagram of cross-section structure of paint layer;
第2B圖為繼第2A圖製程,進行燒結後,於其表面形成一絕 緣層之剖面結構示意圖; 第2C圖為繼第2B圖製程,該元件端部塗附端電極及燒附後 之剖面結構示意圖; 第2D圖為繼第2C圖製程,該元件經熱處理後之剖面結構示 意圖, 第3 A圖為本發明之多層式晶片型陶瓷過電壓抑制器元件第 一貝施例,陶瓷本體燒結後、端電極製作前之剖面結構示 第3B圖為繼第3A圖 料層,再經熱處理 構不意圖; 第3C圖為繼第3B圖 之剖面結構示意圖 第3D圖為繼第3C圖 製程,於其表面塗佈 製程,於其表面形成 製程,該元件端部塗 , 製程,該元件經熱處 一層氧化物混合塗 一絕緣層之剖面結 附端電極及燒附後 理後之剖面結構示Fig. 2B is a schematic cross-sectional structure diagram of an insulating layer formed on the surface after sintering following the process of Fig. 2A; Fig. 2C is a cross-section of the component with end electrodes coated and fired following the process of Fig. 2B Schematic diagram; Figure 2D is a schematic diagram of the cross-sectional structure of the component after heat treatment in Figure 2C. Figure 3A is the first example of the multilayer wafer-type ceramic overvoltage suppressor element of the present invention, and the ceramic body is sintered. The cross-sectional structure before and after the terminal electrode is manufactured is shown in FIG. 3B, which is a layer following the 3A drawing, and then processed by heat treatment. FIG. 3C is a schematic view of the cross-sectional structure following FIG. 3B. FIG. 3D is a process following FIG. 3C. A coating process is formed on the surface, a process is formed on the surface, and the end of the component is coated. In the process, the component is mixed with an oxide layer and a layer of an insulating layer is attached to the end electrode, and the cross-section structure after firing is shown.
第15頁 200408333Page 15 200408333
圖式簡單說明 意圖; ,4^,為本發明之多層式晶片型陶瓷過電壓抑制器元件第 t f施例,陶瓷本體燒結後、端電極製作之前之剖面結構 第4Β圖為繼第4Α圖製程,該元件浸泡於〇5%}1(:1水溶液中工 ,鐘後,内電極端部向外凸出之剖面結構示意圖; 第4C圖為繼第4B圖製程,該元件表面塗佈一層玻璃塗料 層丄再經熱處理製程,於其表面形成一絕緣層之剖面結構 示思圖; 第4D圖為繼第4C圖 之剖面結構示意圖 第5 A圖為本發明之 四實施例,陶瓷本 構不意圖; 製程,該元件端部塗 多層式晶片型陶瓷過 體燒結後並完成端電 附端電極及燒附後 電壓抑制器元件第 極製作後之剖面結The figure briefly illustrates the intent; 4 ^ is the tf embodiment of the multilayer wafer-type ceramic overvoltage suppressor element of the present invention. The cross-sectional structure after the ceramic body is sintered and before the terminal electrode is manufactured. Figure 4B is a process following Figure 4A. The component is immersed in a 05%} 1 (: 1 aqueous solution. After the clock, the cross-sectional structure of the internal electrode ends protruding outwards; Figure 4C is a process following Figure 4B, the component surface is coated with a layer of glass The coating layer is subjected to a heat treatment process to form a sectional structure diagram of an insulating layer on the surface; FIG. 4D is a schematic sectional structure diagram following FIG. 4C. FIG. 5A is a fourth embodiment of the present invention. Intent; In the process, the end of the element is coated with a multilayer wafer-type ceramic body, and the cross-section junction of the voltage suppressor element after firing is completed after the terminal electrode is attached and the voltage suppressor element after firing is completed.
於其表面塗佈一層玻璃塗料層之 第5B圖為繼第5A圖製程 剖面結構示意圖; 第5C圖為繼㈣圖製程,再經熱處理程序,於其表面形成 一絕緣層之剖面結構示意圖。 【元件符號簡單說明】 尚未燒結之陶瓷本體10 燒結後之陶瓷本體1 2 尚未燒結之内電極2 0 燒結後之内電極2 2Figure 5B is a schematic cross-sectional structure diagram of the process following Figure 5A; Figure 5C is a schematic cross-sectional structure diagram of an insulating layer formed on the surface after the heat-treatment process. [Simple description of element symbols] Ceramic body that has not been sintered 10 Ceramic body after sintering 1 2 Internal electrode that has not been sintered 2 0 Internal electrode after sintering 2 2
第16頁 200408333 圖式簡單說明 尚未燒附之端電極30 燒附後之端電極3 2 未經熱處理的陶瓷本體表面之塗料層40 表面絕緣層6 0 表面絕緣層製作完成後,内電極端部殘存之塗料8 0 11·· 第17頁Page 16 200408333 The diagram simply illustrates the end electrode that has not yet been affixed. 30 The end electrode after sintering. 3 2 Coating layer on the surface of the ceramic body without heat treatment. 40 Surface insulation layer. Remaining paint 8 0 11 ·· Page 17
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