200407642 玖、發明說明： 【發明所屬之技術領域】 本發明係關於一種液晶顯示裝置等上使用之適切之主動 矩陣型基板及其製造方法與使用其之顯示裝置。 【先别技術】 近年來，各種顯示裝置中 降型之顯示裝置被廣泛使用 係在各個以矩陣狀配置於基 切換元件，因此可藉由確實 精密化等之特性。 ，可獲得鬲顯示品質之主動矩 。由於該主動矩陣型顯示裝置 板上之多數個像素電極上設置 之切換輕易地獲得大型化、高 此等顯示裝置進-步要求儘可能擴大像素區域以提高項 κ壳度。因而發展成在整個主動矩陣型基板上形成厚港 〈絕緣膜，並於該絕緣膜上形成像素電極者。此種於絕绿 版上設置像素電極之構造者，因在配置於絕緣膜下層之轉 描線及信號線等與配置於上層之像素電極之間不產生、 以使此等配線重疊之方式，可以寬廣面積形成像 二極。猎此’將薄膜電晶體（Thln Fllm Tr則st〇r，以 間稱TFT)等之切換元件及形成有掃描線、信號線之區域以 外全邵形成像素區域，可提高開口率。此外，使用於液晶 ^裝置時’因TFT及掃描線、信號線部之階差構造藉“ 膜之絕雜而平坦化，所以亦具有可避免因上述階差部屋卞 生又及日日分子配向凌亂造成顯示不良的停胃占。 此種絕緣膜，先前係使用以CVD成膜谓無機絕緣膜 不過猎由CVD形成厚膜時，不但耗費過多成膜時間，且 85501 200407642 因石夕系絕緣膜之介電堂赵古 令斗十、 ★同’在與像素電極之間產生大的 可生電容。因而係普遍 數 門產生大的 塗敷等，可在ϋηΗ _、 巾數小’猎由印刷及自旋 守了在ι時間比較均—地成膜 有機系絕緣膜。 仃口成本效显尤 再者，如上述地在絕緣膜200407642 发明 Description of the invention: [Technical field to which the invention belongs] The present invention relates to a suitable active matrix substrate used in a liquid crystal display device and the like, a manufacturing method thereof, and a display device using the same. [Advanced technology] In recent years, various types of display devices have been widely used in the form of reduced display devices. Each of the display devices is arranged in a matrix shape on the base switching element. Therefore, characteristics such as precision can be achieved. , You can get the active moment of the display quality. Because the switching provided on the plurality of pixel electrodes on the active matrix display device is easily large and high, these display devices further require that the pixel area be enlarged as much as possible to increase the term κ shell. Therefore, it is developed to form a thick-walled insulating film on the entire active matrix substrate, and to form a pixel electrode on the insulating film. Such a structure in which a pixel electrode is provided on an absolutely green version does not generate between the trace lines and signal lines arranged on the lower layer of the insulating film and the pixel electrodes arranged on the upper layer, so that these wirings can overlap. The wide area is formed like a dipole. In this case, the pixel area can be entirely formed in addition to switching elements such as thin film transistors (Thln Fllm Tr, or TFT), and areas where scanning lines and signal lines are formed, which can improve the aperture ratio. In addition, when used in a liquid crystal device, the step structure of the TFT, the scanning line, and the signal line portion is flattened by the "uncomplicated film", so it can also avoid the occurrence of the above-mentioned step portion and the daily molecular alignment. Mess caused by poor appetite. This type of insulating film was previously used as inorganic insulating film formed by CVD film. However, when thick film is formed by CVD, it not only takes too much film forming time, but also 85501 200407642 due to Shixi insulating film. Zhiditang Zhao Guling Dou X. ★ Same as the generation of large generateable capacitance between the pixel electrode. Therefore, a large number of coatings are generally generated, which can be used in printing and printing. It keeps a relatively even time in ι-the film is formed into an organic insulating film. The cost efficiency of the mouthpiece is even more significant, as described above in the insulating film.
、 口又1像素電極之構造者，丁FT 之源極與像素電極之接觸 、 τ、、、工田在月吴厗万向貫穿絕緣膜 <接觸孔來進行。 該接觸孔係藉由㈣】而形成，不過’此時源極表面如存 在姓刻殘逢及自然氧化膜時，接觸電阻惡化，_顯示 =產生及可靠性降低。因而，係於進行電衆清除（或反 成射）等，除去此種源極表面之蝕刻殘渣及自然氧化膜等後 ，形成像素電極。 【發明所欲解決之問題】 但是’進行電漿清除時，會因電漿損傷造成有機膜表面 岐化’於有機膜表面形成變質層。該變質層因碳化致使表 面電阻降低，而使有機膜表面之絕緣性惡化，可能因介於 像素電極間之低電阻之變質層，而在像素電極間產生漏電 流。因而，使用此種基板構成顯示裝置時，可能降低其顯 示的對比。 圖12顯示透過型液晶顯示裝置之像素電極間之漏電流與 對比之關係，圖13顯示電漿清除之電力與有機膜之表面電 阻及接觸電阻之關係。如圖12所示，可知於漏電流超過 10_12A時對比開始逐漸下降，並於超過10’Α時急遽地降低 。因而，為求使顯示穩定，宜將漏電流抑制在1 12 A以下。 H5501 200407642 此時雖考慮宜將電漿清 + 13⑷），但是將電衆清除之^力抑制在⑽W以下（參照圖 像素電極與源極之接觸電阻超過：在1〇°Τ^ 丁 了此辨法獲得炎好之接觸。 a 1，）所 為求避免此種問題，如 後，進行電衆清除之方法。^機絕緣膜上形成保護膜 圖案化步驟增加，而導：此時因保斷成膜與 此外，雖亦考慮採用使用:=成=增加； 特殊氣體，進行乾式 成知傷較小之 進行電衆清除之方法，但是=惡::小之特殊有機材料 殊材料及處理悴件， (㊉擇此m小之特 、王h什，致使處理之自 生產性及可靠性。 由度鈿小，而可能損及 防止像上述問題而提出者’其目的在提供一種可 顯示裝置。属之主動矩陣型基板及使用其之 σ '外纟泰明 < 目的在提供一種不損及處理自由度，而 =止像素電極間之電流我漏之主動矩陣型基板之製造方 【發明内容】 為求達成上逑目的，本發明之 且供ι4 本1又月足王動矩陣型基板之特徵為 綠；掃插線，其係設於上述基板上；信號線，其 “μ上心描線交叉之方式設置於上述基板上；切換元 件’其係设於上述掃描線與上述信號線之交叉部附近；有 機絕緣層’其係以覆蓋上述掃描線、信號線與切換元件之 85501 200407642 方式形成於上述基板上，並具有 逆上迷切挺兀件《接觸 孔，及像素電極，其係形 μ m ^令钱系巴緣層上，並經由 上迷接觸孔與上逑切換元 去m 挟凡件“生連接；上述有機絕緣層之 未形成上逑像素電極之區 絕缘声乏L々内形成有除去-部分上述有機 、、，巴、.象滑 < 表層邵而成之凹部。 本構4因係於像素電極周 缕尾>Jt、、 又且使表面電阻高之有機絕 、'豕層义基底邵分露出之凹部， V ^猎由此種高電阻區域， 口使岫接之各像素電極在表面道 # 寻寸上保持艮好絕緣狀態。 猎7防止經由有機絕緣層之像素電極間之電流线漏。 、日’上逑凹表面電阻宜在1xiqI3q以上。本構造 將王動矩陣型基板應 — 、思❿j履日曰顯不裝置時， 示之對比在300以上。 便”肩 此外’本發明之主動、 車基板〈特徵為具備：基板； 知描線，其係設於 、 土板上，信號線，其係以與上逑掃 ^田線父又又万式設f於 h 'f i- i- ^ 、处土板上，切換元件，其係設於 上述知“線與上逑信號線 人又。卩附近，有機絕緣層，並 係以覆蓋上述掃描繞、彳二％姑t ，、 n與切換元件之^式形成於上 逑基板上，亚具有诵诖 k上逑切換兀件之接觸孔；， 極，其係形成於上逑有機P , 像言吃 〜— 百救、，，巴、豕層上，亚經由上述接觸孔與 处切換兀件包性連接；上述有機絕緣層在包含形成上述 綱極之像素區域之區域内形成島狀，鄰接之島 機絕緣層彼此不連結。 本構造因採像素雷打卩q、 '、弘.間 < 有機絕緣層在膜厚方向 除去之構造，所以可6入^ ^ 几王破 『&全防止經由有機絕緣層之像 85501 200407642 間之電流洩漏。 本發明之顯示裝置之特徵為具備：上述主動矩陣型基板 ’相對基板，其係具有與上述主動矩陣型基板之像素電極 相對而設置之相對電極；及光調制層，其係保持於上述主 動矩陣型基板與上述相對基板之間。 本構造因係採用可防止像素電極間之電流洩漏之上述主 動矩陣型基板，所以可獲得對比高之高品質顯示。 此外，本發明之主動矩陣型基板之製造方法之特徵為具 備掃插線形成步騾，其係形成於基板上；信號線形成步 牡其係在上述基板上與上述掃描線電性絕緣地形成與上 逑知描線父叉之信號線；切換元件形成步驟，其係形成於 =迷知“線及上述信號線之交叉部附近；有機絕緣層形成 f馼，其係於上述基板上形成覆蓋上述掃描線、上述信號 線與上述切換元件之有機絕緣層；接觸孔形成步驟，其係 /、、旱度方向員牙上述有機絕緣層，而通達上述切換元 件<接觸％;像素電極形成步驟，其係於上述有機絕緣層 ^开y成婭由上述接觸孔而與上述切換元件電性連接之像素 電極；及除去步驟’其係藉由乾式蝕刻在厚度方向除去上 述有：：緣層之未形成上述像素電極之區域。 ,、°方法因係藉由乾式触刻自表層部側在膜厚方向除 去一邵分介於像素電極間之有機絕緣層，所以像素電極間 ,區域内形成有機絕緣層之基底部分露出之表面電阻高的 泰^ 1由此種表面電阻高之區域，各鄰接之像素 ¥極在表面傳導上 ’、 /成艮好絕緣狀態，可防止通過有機絕 855()1 10 200407642 緣層表面之像素電極間之電流洩漏。 此時，上述乾式蝕刻宜採用含氟（F)、氧（〇）、氯（C1)中之 至少一種之反應氣體。藉此，可不損及有機絕緣層而完全 除去表層邵之變質層。 亦可知上述像素電極作為掩模來進行上述乾式蝕刻。藉 此，無須乾式蝕刻用之掩模，可簡化製造步驟。 此外，將上述像素電極形成圖案時，亦可使用堆疊於上 述像素電極上之光阻作為上述乾式蝕刻之掩模。藉此，可 抑制乾式蝕刻對像素電極造成之損傷。 另外，上述乾式蝕刻之蝕刻量宜在5 nm以上。藉此，可 使表面電阻高之有機絕緣層9之基底部分確實露出。 此外，本發明之主動矩陣型基板之製造方法之特徵為具 ^掃描線形成步驟，其係形成於基板上；㈣線形成步 驟，其係在上述基板上與上述掃描線電性絕緣地形成與上 述掃描線交叉之信號線；切換元件形成步驟，其係形成於 上述掃描線及上述信號線之交叉部附近；有機絕緣層形成 步知’其係、於上述基板上形成覆蓋上述掃描、線、上述信號 線與上述切換元件之有機絕緣層；接觸孔形成步驟，其係 在厚度万向除去像素區域周圍之上述有機絕緣層，以鄰接 之有機絕緣層不連結之方式劃分成島狀，並且形成在厚度 方向貫穿上述有機絕緣層，而通達上述切換元件之接觸孔 =及像素電極形成步驟’其係在形成於上述像素區域之上 述有機絕緣層上形成經由上述接觸孔而與上述切換元件電 性連接之像素電極。 85501 200407642 本製造方法因係在形成島狀之 吝十』 令機繞緣層上形成各個像 素境極，所以可完全防止經由 象 電流戌漏。 有I爾赠電極間之 牛::外f 了在上逑接觸孔形成步驟與上逑像素電極形成 八、備猎由电漿清除來清理接觸孔之步驟。 本製造万法於藉由此種電漿清除而形成接觸孔 ’可除去附著於切換元件上之殘逢物及自然氧化膜等：可 降低爾後形成之像素電極與切換元件之接觸電阻。另外， 褚由電衆清除，雖於有機絕緣層之表層部形成電阻… 質層’不過此種變質層内之位於未形成像素電極之區^ 變質層係以爾後進行之乾式㈣步驟除去，而於像素電杨 間形成有機絕緣層之基底部分露出之表面電阻高之區域。 因而不致產生通過有機絕緣層表層部之像素電極間之戌漏 電^。此外，因進行乾式餘刻係在形成像素電極之後，所 以精由此種乾式姓刻，絲泰將、主人 J 、、工兒漿清除而清理之接觸孔内部不 致再度污染。 【實施方式】 [第一種實施·形態] [主動矩陣型基板及使用其之顯示裝置] 圖1、圖2分別為說明本發明一種顯示裝置之液晶顯示裝 置（構造的剖面圖及平面圖。另外，圖！⑷及圖3⑷〜圖了⑷ 分別顯不圖2<Ia—la1剖面圖，圖1(b)及圖3(b)〜圖7(b)分別 顯π圖2( lb — lb1剖面圖。此外，使各構成要素之膜厚及尺 寸之比率等適切差異。 8550 丨 -12 - 200407642 如圖卜圖2所示，本實施形態之液晶顯示裝置之構造且 矩陣型基板5G、相對基_、及料於基板50,60 曰1足光過制層之液晶層7〇。 王動、矩陣型基板5 0係在由玻璃及塑膠等構成之基板本體 1上’f別於列方向及行方向上電性絕緣地形成數條掃描^ 、及m泉12 ’在各掃描線15及信號線12之交又部附近形 成有丁心，其係具有咖、咖、及源極7,作為切換 =件。以下，將基板〗上之形成像素電極ί〇之區域、形成切 換兀件30之區域、及形成择描線㈠及信號線^之區域，分 別％為·像素區域101、元件區域1〇2、及配線區域1们。 本m^TFT 3G具有反交錯型之構造，自構成本體 之基板1之最下層部，依序形成有閘極2、閘極絕緣膜3、半 導體層4, 5、汲極6及源極7。亦即，掃描㈣之一部分延伸 而形成閘極2，在覆蓋其之閘極絕緣層3上，以平面觀察横 跨閘極2之方式形成島狀之半導體層4，於該半導體層#兩端 i、J之方’經由半導體層5形成有汲極6，另一方經由半導 體層5形成有源極7。 基板1除玻璃之外，亦可採用聚氣乙烯、聚酯、聚對苯二 甲酸乙二醇酯等合成樹脂類及天然樹脂等透明之絕緣基板。 閘極2由鋁（A1)、銦（Mo)、鎢（w)、妲（Ta)、鈦（丁〇、銅（a) 、鉻（C r)等金屬或包含一種以上此等金屬之鉬一鎢等合金構 成’並如圖2所tf，與配置在列方向之掃描線丨5 一體形成。 閘極絕緣膜3由氧化矽（Sl〇x)&氮化矽（SlNy)等矽系絕緣 膜構成，並以覆蓋掃描線15及閘極2之方式形成於整個基板 85501 -13 - 200407642 1上。 區域。 :_，經由閘極絕緣膜二：二 沒極6及源極7由鋁、鉬、 螞 —μ m、鉻寺金屬及 G 口種以上此等金屬之合金構成，並於1型半導體層4上 二以央著通道區域之方式相對形成。此外1極6與配置於 灯万向〈信號線12一體形成。另外，為求在丄型半導體層* W汲極6及源極7之間獲得良好之歐姆接觸，而在1型半導體 層4μ各兒極6，7之間設有高濃度地摻雜磷（？）等ν族元素之 η型半導體層5。 此外，於基板1上堆疊有絕緣層8, 9,進一步於該絕緣層9 上形成有像素電極10。 像素電極10在有機絕緣層9上成矩陣狀形成數個，並對應 於被掃描線15與信號線12所劃分之區域逐一設置。而後， 孩像素電極10於上述區域内，除形成有丁FT 3〇之角落部區 域（元件區域1 02)之外，其端邊沿著配置於絕緣層8，9下層 之掃描線15及信號線12之方式配置，將除TFT 3〇、掃描線 1 5及信號線1 2外之大致整個基板1區域形成像素區域I 〇 1。 此等像素電極10可使用摻雜錫之氧化銦（][丁〇）及摻雜鋅 之氧化銦（IZO)等具有光透過性之導電膜。此外，使用於反 射型之顯示裝置上時，亦可使用鋁（A1)等光反射性強之導電 膜0 形成於基板1上之絕緣層形成··由氮化矽（SiNy )等石夕系絕For the construction of a pixel electrode, the contact between the source electrode of Ding FT and the pixel electrode, τ, ,, and Gong in Wu Yue Wan through the insulating film < contact hole to carry out. The contact hole is formed by ㈣], but at this time, if there is a surname or a natural oxide film on the source surface, the contact resistance is deteriorated, and _display = is generated and the reliability is reduced. Therefore, the pixel electrode is formed by performing electric mass removal (or reflection), etc., and removing such etching residues and natural oxide films on the source surface. [Problems to be Solved by the Invention] However, when plasma cleaning is performed, the surface of the organic film is disproportionated due to the damage of the plasma, and a deteriorated layer is formed on the surface of the organic film. This deteriorated layer causes surface resistance to decrease due to carbonization, and deteriorates the insulation of the surface of the organic film. A low-resistance altered layer between the pixel electrodes may cause leakage current between the pixel electrodes. Therefore, when a display device is constructed using such a substrate, the display contrast may be reduced. Fig. 12 shows the relationship between the leakage current and the contrast between the pixel electrodes of the transmissive liquid crystal display device, and Fig. 13 shows the relationship between the electric power removed by the plasma and the surface resistance and contact resistance of the organic film. As shown in FIG. 12, it can be seen that the contrast starts to gradually decrease when the leakage current exceeds 10-12A, and decreases sharply when it exceeds 10′A. Therefore, in order to stabilize the display, it is desirable to suppress the leakage current to 1 12 A or less. H5501 200407642 At this time, although it is considered appropriate to clean the plasma + 13⑷), the power of removing the electric mass should be kept below ⑽W (refer to the figure. The contact resistance between the pixel electrode and the source exceeds: 10 ° T ^. It is necessary to obtain a good contact. A 1,) To avoid such problems, the method of removing the electric mass is performed later. ^ The patterning step of forming a protective film on the insulating film of the machine is increased, and at this time, due to the break film formation and in addition, although it is also considered to use: = 成 = Increase; special gas, dry formation, less damage, and electricity The method of mass removal, but = evil :: small special organic materials, special materials and processing papers, (choose this m small special, Wang h even, resulting in the self-productivity and reliability of the processing. It may impair the proponents of problems like the above. 'The purpose is to provide a displayable device. The active matrix substrate and the σ' nephew Taiming 'using it are intended to provide a method that does not damage the degree of freedom of processing, and = The manufacturer of the active matrix substrate that stops the current between the pixel electrodes. [Inventive Content] In order to achieve the above purpose, the present invention provides 4 features of the 1st full moon matrix substrate is green; sweep The plug wire is provided on the above substrate; the signal line is provided on the above substrate in such a way that the upper trace of the μ crosses; the switching element is provided near the intersection of the scan line and the signal line; organic insulation Layer 'its It is formed on the above substrate in a manner of covering the scanning line, the signal line and the switching element 85501 200407642, and has an inverse obliquely-shaped member "contact hole, and a pixel electrode. Its shape is μm." On the layer, and through the contact hole and the upper switching element to m, the connection is made; the above-mentioned organic insulating layer is not formed in the area where the upper pixel electrode is formed, and there is a removal-part of the organic, ,,,,,,,,,,,,,, and recessed surface recess. Constituent 4 is due to the pixel electrode around the tail of the tail > Jt, and also has a high surface resistance of the organic insulation, the surface of the recessed substrate is exposed In this high-resistance region, the pixel electrodes connected to each other maintain a good insulation state on the surface track. The hunting 7 prevents the leakage of current lines between the pixel electrodes through the organic insulating layer. 'The surface resistance of the upper concave concave should be more than 1xiqI3q. This structure will show a contrast of more than 300 when the Wangdong matrix type substrate is installed. When the display is not installed, it will be "in addition to the shoulders" of the present invention. Substrate <Features Substrate; Knowing the drawing line, which is set on the soil plate, and the signal line, which is set in the same way as the upper line, and the field line is set on the h'f i-i- ^, on the soil plate, and switched Element, which is located in the above-mentioned signal line and signal source. In the vicinity of the element, an organic insulating layer is formed on top of the above-mentioned scanning coil, the element and the switching element. On the substrate, Ya has a contact hole for the switching element on the top of the base; the pole is formed on the top of the organic P, like the word ~ Baishou ,,, and Ba, the layer, through the above contact The holes and switches switch the package inclusively; the organic insulating layer forms an island shape in a region including the pixel region forming the outline, and adjacent island insulating layers are not connected to each other. This structure adopts the structure that the pixel lightning strikes q, ', and H. < the organic insulating layer is removed in the direction of the film thickness, so it can be entered 6 ^ ^ Kings break "& prevent the image through the organic insulating layer 85501 200407642 Between current leakage. The display device of the present invention is characterized by comprising: the above-mentioned active matrix-type substrate 'opposite substrate, which has an opposite electrode disposed opposite to the pixel electrode of the above-mentioned active matrix-type substrate; and a light modulation layer, which is maintained in the above-mentioned active matrix Between the type substrate and the above-mentioned opposing substrate. This structure adopts the above-mentioned active matrix type substrate which can prevent current leakage between pixel electrodes, so that a high-quality display with high contrast can be obtained. In addition, the manufacturing method of the active matrix substrate of the present invention is characterized by including a step of forming a plug-in line, which is formed on the substrate; and a step of forming a signal line, which is formed on the substrate by being electrically insulated from the scanning line. The signal line of the parent fork with the upper trace; the switching element forming step is formed in the vicinity of the intersection of the "magic" line and the signal line; the organic insulating layer is formed on the substrate to cover the above. The organic insulating layer of the scanning line, the signal line, and the switching element; the contact hole forming step, which is the above-mentioned organic insulating layer in the dryness direction, and reaches the switching element <contact%; pixel electrode forming step, It is based on the above-mentioned organic insulating layer, a pixel electrode that is electrically connected to the switching element through the contact hole, and a removing step, which removes the above in the thickness direction by dry etching: The above-mentioned region of the pixel electrode is formed. The method is to remove an organic insulation between the pixel electrodes in the film thickness direction from the surface layer side by dry touching. Therefore, the surface resistance of the organic insulating layer exposed in the region between the pixel electrodes and the exposed surface has a high surface resistance. 1 In this area with high surface resistance, each adjacent pixel electrode is conductive on the surface. State to prevent current leakage between the pixel electrodes passing through the surface of the organic insulator 855 () 1 10 200407642. At this time, the dry etching should preferably use at least one of fluorine (F), oxygen (0), and chlorine (C1). One kind of reaction gas. This can completely remove the surface layer and the deteriorating layer without damaging the organic insulating layer. It is also known that the pixel electrode is used as a mask to perform the dry etching. Thus, a mask for dry etching is not required, which can simplify Manufacturing steps. In addition, when the pixel electrode is patterned, a photoresist stacked on the pixel electrode may be used as a mask for the dry etching. This can suppress damage to the pixel electrode caused by the dry etching. In addition, the above The etching amount of the dry etching is preferably more than 5 nm. As a result, the base portion of the organic insulating layer 9 with high surface resistance can be surely exposed. The manufacturing method of the moving matrix type substrate is characterized by a scanning line forming step, which is formed on the substrate; a thin line forming step, which is formed on the substrate to be electrically insulated from the scanning line and intersects the scanning line. A signal line; a step of forming a switching element, which is formed near the intersection of the scanning line and the signal line; an organic insulating layer forming step is known; its system is formed on the substrate to cover the scanning, line, the signal line, and the above The organic insulating layer of the switching element; the contact hole forming step is to remove the above-mentioned organic insulating layer around the pixel area in the thickness universally, divide it into islands so that adjacent organic insulating layers are not connected, and form the organic layer in the thickness direction through the organic layer. An insulating layer to reach the contact hole of the switching element = and the pixel electrode forming step ′ is to form a pixel electrode electrically connected to the switching element via the contact hole on the organic insulating layer formed in the pixel region. 85501 200407642 The manufacturing method is based on the formation of island-shaped “Ten Ten” coil winding layer to form each pixel boundary pole, so it can completely prevent leakage of current through the image. There are two parts of the electrode between the electrodes :: outer f. The step of forming the contact hole of the upper cell and the formation of the pixel electrode of the upper cell 8. Prepare the step of cleaning the contact hole by plasma removal. The method of this manufacturing method is to form a contact hole through such plasma removal, which can remove the debris and natural oxide film attached to the switching element: it can reduce the contact resistance between the pixel electrode and the switching element formed later. In addition, Chu is removed by the electric mass, although a resistance is formed in the surface layer portion of the organic insulating layer ... the quality layer 'but the area within this type of deterioration layer which is not formed with a pixel electrode ^ The quality deterioration layer is removed by a subsequent dry step, and A region with a high surface resistance is exposed on a portion of the substrate where an organic insulating layer is formed between the pixel electrodes. Therefore, no leakage current occurs between the pixel electrodes passing through the surface layer portion of the organic insulating layer. In addition, since the dry etching is performed after the pixel electrode is formed, the dry surname is used for the inscription, so the inside of the contact hole cleaned by Si Taijiang, the master J, and the worker's slurry will not be contaminated again. [Embodiment] [First implementation and form] [Active matrix substrate and display device using the same] FIG. 1 and FIG. 2 are respectively a cross-sectional view and a plan view of a liquid crystal display device (a structure) illustrating a display device of the present invention. , Figure! ⑷ and Figure 3⑷ ~ Figure 图 are shown in Figure 2 < Ia-la1 cross section, Figure 1 (b) and Figure 3 (b) ~ Figure 7 (b) are shown in Figure 2 (lb-lb1 section) In addition, the film thickness and size ratio of each constituent element are appropriately adjusted. 8550 丨 -12-200407642 As shown in FIG. 2, the structure of the liquid crystal display device of this embodiment, the matrix substrate 5G, and the relative base _, And the substrate is 50, 60, which is a liquid crystal layer 70 that is a light-passing layer. Wang Dong, matrix substrate 50 is on the substrate body 1 made of glass, plastic, etc. 'f is different from the column direction and A plurality of scans are formed electrically in the row direction, and the spring 12 'is formed near the intersection of each scan line 15 and the signal line 12, and a Dingxin is formed, which has coffee, coffee, and source 7 as a switch. In the following, the area on the substrate where the pixel electrode ί is formed and the area where the switching element 30 is formed And the areas where the selective line ㈠ and the signal line ^ are formed, respectively, the pixel area 101, the element area 102, and the wiring area 1. The m ^ TFT 3G has a structure of an inverse staggered type and self-constituted substrate 1 In the lowermost part, a gate electrode 2, a gate insulating film 3, a semiconductor layer 4, 5, a drain electrode 6, and a source electrode 7 are sequentially formed. That is, a portion of the scan electrode is extended to form the gate electrode 2, which covers it. On the gate insulating layer 3, an island-shaped semiconductor layer 4 is formed across the gate 2 in a plan view, and a drain electrode 6 is formed on the semiconductor layer # at both ends i and J through the semiconductor layer 5. One side forms a source electrode 7 through the semiconductor layer 5. In addition to glass, the substrate 1 may be a transparent insulating substrate such as synthetic resins such as polyethylene, polyester, polyethylene terephthalate, and natural resin. Gate 2 is made of metals such as aluminum (A1), indium (Mo), tungsten (w), thorium (Ta), titanium (butano, copper (a), chromium (Cr)) or molybdenum containing more than one of these metals It is composed of an alloy such as tungsten and is integrated with the scanning lines 5 arranged in the column direction as shown in FIG. 2 tf. The gate insulating film 3 is oxidized (SlOx) & Silicon nitride (SlNy) and other silicon-based insulating films, and are formed on the entire substrate 85501 -13-200407642 1 so as to cover the scan line 15 and the gate 2. Area.: _, Via Gate insulation film 2: Diode 6 and source electrode 7 are composed of aluminum, molybdenum, ma-μm, chromium temple metal, and alloys of these metals, and are placed on top of the type 1 semiconductor layer 4. It is formed opposite to the channel area. In addition, 1 pole 6 is integrally formed with the lamp universal <signal line 12. In addition, in order to obtain a good ohmic contact between the 丄 -type semiconductor layer * W drain 6 and source 7 , And a high concentration of doped phosphorus (? ) And other n-type semiconductor layers 5 of group v elements. In addition, an insulating layer 8, 9 is stacked on the substrate 1, and a pixel electrode 10 is further formed on the insulating layer 9. A plurality of pixel electrodes 10 are formed in a matrix on the organic insulating layer 9 and are provided one by one in correspondence with the area divided by the scanning lines 15 and the signal lines 12. Then, in the above-mentioned region, except for the corner region (element region 102) of DFT 30, the edge of the pixel electrode 10 is along the scanning lines 15 and signal lines disposed under the insulating layers 8, 9 It is configured in a manner of 12 to form a pixel region I 〇1 substantially on the entire area of the substrate 1 except for the TFT 30, the scan lines 15 and the signal lines 12. These pixel electrodes 10 may use a light-transmissive conductive film such as tin-doped indium oxide (] [but 〇) and zinc-doped indium oxide (IZO). In addition, when used in a reflective display device, a conductive film with high light reflectivity such as aluminum (A1) can also be used. 0 An insulating layer formed on the substrate 1 is formed from a silicon sieve such as silicon nitride (SiNy). Absolutely
8550J 200407642 樹=^ j <播機繞緣層8 ;及由丙烯基系樹脂、聚醯亞胺系 、、苯并環丁烯聚合物（BCB)等構成之有機絕緣層9之兩 r — 乂 ^化TFT 30之保護功能。此外，有機絕緣層9 木用顯WXH)、以上高表面電阻之構件，以 極1 〇間之为潙命、六 ^ ^ ^ 。再者，該有機絕緣層9堆疊比基板工厚 ’確實形成像素電極10與丁 FT 30及配線15, 12之絕緣，以： 3像素電極1〇之間產生大的寄生電容，並且藉由厚膜之 '機絕緣層9，使藉由TFT 3Q及配線15, 12所形成之基板工 _、白差構化丁以平坦化。另外，在有機絕緣層9上適切使用 =性之丙烯基樹脂，藉此，如後述之[主動矩陣型基板之 ‘ k方法]項中〈說明，可簡化形成接觸孔時之步驟。 ^ 1源極上方形成有在膜厚方向貫穿絕緣層8，9 之接觸孔16 ’經由形成於該接觸孔16之導電部切&，形成於 有機、、巴、.彖層9上之像素電極丨〇與配置於絕緣層8下 7電性連接。 再者’元件區域⑻及配線區域103等有機絕緣層9之非像 素區域内設有除去一部分表層部所形成之凹部G，形成有機 絕緣層9之基底部分露出之狀態。該凹部〇之表面因顯示與 有機絕緣層9之基底部分同樣為1x1〇13q之高表面電阻，所 以鄰接之像素電極_處於在表面科Μ好絕緣狀態。 而後万；如此構成〈基板！上，進—步以覆蓋像素電極^ 及有機絕緣層9之方式，形成由實施摩擦等料配向處理之 聚醯亞胺等構成之配向膜5 j。 另外’相對基板60係在由玻璃及塑膠等構成之透光性之 85501 200407642 基板本體6 1上，以至少對應、 、•肩不^域 < 万式，形成Ϊ 丁〇 及IZO等透明之相對電柄（ 、 u、用电極）62，進一步在對應於基 板61之至少顯示區域的位 ' ， 且形成有由實施特定配向處理 之聚醯亞胺等構成之配向膜63。 而後’如上述構成之基板50,60,藉由塗敷成矩形框狀之 熱硬化性密封材料（省略圖式）接著於基板周邊部，並藉由配 置=基板50, 60間之間隔構件（省略圖式），在一定地隔開的 保持並且於被基板5〇, 6〇及密封材料所密閉之空間 封入液晶7 0。 Q此’本5施㈣之主動矩陣型基板因係在有機絕緣層9 表面之未形成像素電極之元件區域1〇2、配線區域ι〇3内形 成表面電阻高之有機絕緣層9基底部分露出之凹部，所以鄰 接< 各像素兒極1〇藉由此種高電阻區域在表面傳導上形成 反好絕緣狀態，可防止像素電極1Q間之電流戍漏。 此外，藉由知用此種防止像素電極丨〇間電流洩漏之主動 矩陣型基板來構成顯示裝置，可獲得高品質之顯示。特別 疋將此種王動矩陣型基板5〇使用於透過型液晶顯示裝置時 ，因凹部G之表面電阻為1χ1〇ηΩ，所以顯示之對比邛達 300以上（參照圖12)。 另外’形成於像素電極1〇下之有機絕緣層9之最上層部分 藉由後述之主動矩陣型基板之製造方法中應用之電衆處 理’而形成低電阻化之變質層14。 [主動矩陣型基板之製造方法] 其次’參照圖3〜圖7說明製造TFT陣列基板之方法，作為 85501 -16 - 200407642 本發明一種主動矩陣型基板5〇之製造方法。 首先，在玻璃及塑膠等基板1上，藉由熟知之方法，形成 如圖3(a)、圖3(b)所示之TFT 30、掃描線15、及信號線12。 此種TFT 30之製造方>去，如首先於基板匕n賤射形成 銘、细、鶴、叙、飲、銅、鉻等金屬或包含此等之合金膜 ，藉由光蝕刻步驟及蝕刻步·驟，形成閘極2及掃描線15圖案 。其次，藉由電漿CVD及濺射等，在其上形成由氧化矽及 氮化矽等矽系絕緣膜構成之閘極絕緣層3。而後，在不暴露 於空氣下，形成由a—矽等構成之i型半導體層4及η型半導 把層5，藉由光蚀刻步驟及姓刻步驟。將半導體層*，$形成 島狀圖案。其次，藉由濺射，在其上形成鋁、自、鎢、銓 、飲、銅、料金屬或包含此等之合金膜，並藉由钱刻形 成汲極6源極7、佗唬線12圖案。其次，將該汲極6及源極 7作為掩模，蝕刻η型半導體層5將其予以分離。 其次，以覆蓋此等TFT 30、掃描線15、信號線12之方式 ’藉由電漿CVD，於基板1±形成由氮切（SiNx)構成之無 機絕緣層8 ’繼續’藉由自旋塗敷來塗敷由丙稀基系樹脂、 聚醯亞胺系樹·脂或BCB等構成之有機絕緣層9，儘可能將 TFT 30及配線15, 12之p!差構造予以平坦化。而後，於源極 7上万4有機絕緣層9上形成貫穿孔。此時之有機絕緣層9若 使用感光性之樹脂時，因係藉由將有機絕緣層8予以曝光、 顯像，而在有機絕緣層9上形成貫穿孔，所以可簡化製造步 驟。此外，使用非感光性樹脂時，則係藉由乾式姓刻等形 成貫穿孔。 8550] -17 - 200407642 其次，將有機絕緣層9作為掩模，藉由使用SF6、氧、氬 之反應氣體進行乾式姓刻’除去上述貫穿孔底面之無機2 緣層8，而形成自有機絕緣層9表面通達源極7之接觸孔“ (參照圖4(a)、圖4(b))。 此時，因露出之源極7表面會被蝕刻殘渣及自然氧化膜 等污染，所以需要進行清理接觸孔16内之表面處理。具體 而言，係將絕緣層8, 9作為掩模，進行使用氬氣之電漿清除 (反藏射），來除去源極7上之殘渣及自然氧化膜13(參照圖 5⑷、圖5(b))。另外，藉由該電漿清除，有機絕緣層9之表 面局部碳化，而形成電阻小之變質層丨4。 其次，在包含接觸孔16内面之絕緣層8,9上，藉由濺射形 成導電膜，並藉由蝕刻，將數個像素電極1〇形成矩陣狀圖 案（參照圖6(a)、圖6(b))。另外，將主動矩陣型基板用於透 過型液晶顯示裝置時，此種導電膜係形成IT〇、IZ〇等光透 過性高之導電膜，用於反射型顯示裝置時，係形成鋁等光 反射性高之導電膜。 其次，為求恢復未形成像素電極10之有機絕緣層9表面之 系巴緣性’而進行改變性質或除去有機絕緣層9之表層部之表 面處理。此因，於上述電漿清除步騾中，可能因形成於有 機絕緣層9表面之低電阻之變質層14，而在鄰接之像素電極 1 0間產生電流洩漏。 具體而言’係藉由將像素電極丨〇作為掩模之乾式蝕刻， 除去一部分有機絕緣層9之表層部，在有機絕緣層9表面之 未形成像素電極1 〇之區域（亦即元件區域1 〇2與配線區域 85501 -18 - 200407642 103)’形成表面電阻高之有機絕緣層9之基底部分霖出 域(凹部GX參照圖7⑷、圖7(b))。因而，採用除去變質層之 万法，無須考慮與其他處理之整合性，不致如先前地損及 處理自由度。此外，將像素電極1〇本身作為掩模進行乾式 钱刻時，、無須重新設置钱刻用掩模，可簡化製造步驟。此 時’為求避免損傷像素電極1〇，反應氣體係採用包含h SF6, CF4, Cl2, HC1，Bcl3等氣（F)、氧（〇)、氯（α)中至少一種 之反應氣體來進行。此種反應氣體因ΙΤ〇等之蝕 以藉由採用此種氣體可儘量抑制對像素電極1()之損傷，同 時僅針對有機絕緣層9進行姓刻。 此外，亦可在像素電極10上形成保護膜後，將該保護膜 作為掩模料上述之乾式㈣]。藉此，可確f防止像素電 極听損傷。上述之保護膜可使用將像素電極1G形成圖案 時堆疊於像素電極1()上之光阻。於形成像素電極轉無須 剥離此種光阻而可再利用，無須重新形成保護膜，可簡化 製造步驟。特別是因鋁及鉻等金屬容易藉由^2, HO, 謙豊蝕刻’所以使用含氯之反應氣體進行乾式蝕刻時/ 宜藉由光阻等保護膜覆蓋像素電極1〇。另外，雖亦須考慮 電漿清除之條件，不過因變質層14之層厚大致約5 nm，^ 以乾式蝕刻之蝕刻量宜約為5 nm〜20 nm。藉此，可使表面 電阻南之有機絕緣層9之基底部分確實露出。 取後，藉由印刷及自旋塗敷，於整個基板丨上形成由聚醯 亞胺等構成之配向膜5丨，實施摩擦等特定之配向處理（參昭 圖1)。 … 85501 19 200407642 如以上所逑地製造TFT陣列基板50。 因此’上述之主動矩陣型基板之製造方法，因係藉由乾 式蝕刻除去元件區域1 02及配線區域1 03等未形成乙 域< 有機絕緣層9表層部，所以在鄰接之像素電柘1〇 炙間形成有機絕緣層9之基底部分露出之表面電阻高之凹〇 邵G:藉此，鄰接之各像素電極丨〇在表面傳導上形成：： 緣狀態，可防止像素電極1〇間之電流洩漏。 、e 此時，因採用包含氟（F)、氧（〇)、氯（α)*至少一種之反 應氣體進行乾式触刻，所以可儘量抑制對像素電㈣之= 傷，來蝕刻有機絕緣層9。 男 另外’如上所述’本實施形態之主動矩陣型基板係在本 體<基板1上採用絕緣性之基板，不過除此之外，亦可於不 鏽鋼等導電基板上形成絕緣膜，在該絕緣膜上形成上述T打 3 0及各種配線15，12等。 此外，將TFT 30及配線15, 12與像素電極1〇絕緣之絕緣層 ’並不限定於上述由無機絕緣層8及有機絕緣層9構成之: 層構造者，亦可僅有有機絕緣層9。 再者，有機絕緣層9亦可形成僅藉由特定之表面處理而形 成凹部G之表層部之電组在1x1〇i3q以上，來取代將整體 電阻形成1 X 1013Ω以上。 此外，上述之光調制層70，昤妨曰士从 、 ^ 除/夜日日又外，5F可採用於分 散媒中使著色帶電粒子分散者，莽.，十 J刀狀有猎此，亦可將顯示裝置形 成電泳顯示裝置。此外，顧示裝晉十 1 不表且吓可為透過型、反射型 或半透過反射型之任何一種形態。 85501 -20 - 200407642 [第二種實施形態] [主動矩卩車型基板及使用其之顯示裝置] 圖8為說明本發明之主動矩陣型基板之構造用之叫面圖 。另外’圖8⑷〜圖U⑷分別顯示圖2之卜u，剖面圖，圖 8(b)〜圖11(b)分別顯示圖2之化一化，立彳而冃 ib纠面圖。此外，使各構 成要^之膜厚及尺寸之比率等適切差異。再者，盘上述第 -種實施形態相同之構造註記相同符號，省略其一部分說 明，並且挪用圖2來說明。 口 如圖8所示，本實施形態之顯示裝置與圖}所示之上述第 一種實施㈣者同樣地，採用在主動㈣型基板50,與相對 配置I相對基板6G〈間保持有作為光調制層之液晶層之 構造。 主動矩陣型基板5〇丨與上述第一插奋 ^弟種貫施形態者同樣地，在 基板本體1上具備··數個晉士人 、 敫们配置於列万向之掃描線1 5與數個配 置於行方向之信號線12，在各掃描線15與信號線12之交叉 邵附近具備作為切換元件之TFT3Q。此外，在基板丨上堆疊 由無機絕緣層8、有制、㈣9構成之兩層料之絕緣層， 進一步於該有機絕緣層9上形成有像素電杨】〇。 本:她形怨之主動矩陣型基板5〇，與上述第一種實施形態 者不5、處在糸，並非在像素電極I 〇間之有機絕緣層9上形 成凹部G’而係在膜厚方向完全地除去像素電極测之有機 絕=層9。而其他之主動矩陣型基板5q,之構造及使用其之顯 衣置之構化則與上述第一種實施形態相@，因此省略其 說明。 85501 -21 - 200407642 耶即，有機絕緣層9係形成在除去配線區域丨〇3(亦即包含 像素區域⑻與元件區域1()2之區域）上形成島狀，其以外^ 域之有機絕緣層9完全被除去之構造。因而有機絕緣層9在 精由掃描線15及信號線12所劃分之矩形區域内，彼此不連 結地成棋盤狀配置數個，並經由配向膜51彼此隔離構成。 忑形成棋盤狀之各有機絕緣層9上逐一形成有像素電極1〇 ，亚經由接觸孔16與配置於無機絶緣層8下層之源極7電性 連接。 因此，本實施形態之主動矩陣型基板可將鄰接配置之各 像素電極1G在表面傳導±大致完全地絕緣。藉此，可完全 防止經由有機絕緣層9之像素電極1〇間之電流洩漏。 、另外，如上所述，本實施形態之主動矩陣型基板雖將形 2島狀之有機絕緣層9之形成區域作為像素區域1〇1與元件 區=102，但是在鄰接之各有機絕緣層9彼此隔離的狀態下 二：亦可使上述形成區域一邵分重疊於配線區域1 3上。 [主動矩陣型基板之製造方法] 、施形怨之主動矩陣型基板之製造方法，其丁 F Τ 3 〇之 製造步驟之前與上述第一種實施形態之主動矩陣型基板之 製造女、、土 彳目同，因此以下依據圖9〜圖11僅說明其以後進行 之步驟。 本製造方法係在形成有TFT 3〇、掃描線15、信號線12之 回、示〜基板1上，藉由電漿CVD而形成由氮化矽（SiNx) 構成之無機絕緣層8。 /、/入，藉由自旋塗敷來塗敷由丙烯基系樹脂、聚醯亞胺 85501 -22 - 200407642 系树脂或BCB等構成之有機絕緣層9，儘量將丁FT 3〇及配線 I5，12之階差構造予以平坦化。而後，在源極7上方之有機 絕緣層9上形成貫穿孔，並且除去配線區域103(亦即除像素 區域1〇1與元件區域102之區域）之有機絕緣層9。藉此，於 藉由掃描線15及信號線12所劃分之各個區域内，彼此不連 結地逐一形成矩形狀之有機絕緣層9，在基板1上，如此形 成（數個有機絕緣層9配置成棋盤狀。 而後，將有機絕緣層9作為掩模，藉由使用SF6、氧、氬 之反應氣體進行乾式蝕刻，除去形成於源極上方之貫穿孔 底面之無機絕緣層8,而形成接觸孔16(參照圖9(a)、圖卿。 其次，將絕緣層8, 9作為掩模，藉由使用氯氣之電聚清除 (反錢射）來清理接觸孔16内，而除去源極7上之姓刻殘清及 自然氧化膜13等污染物（參照圖1〇(〇、圖1〇〇)))。 其次，在包含接觸孔16内面之絕緣層8,9上，藉由錢射形 成導電膜’並藉由㈣在形成棋盤狀之各個有機絕緣層9上 形成各個像素電極10圖案（參照圖u(a)、圖ii(b))。另外， 有機絕緣層9上雖因電衆損傷而形成有變質層14，但是因各 個有機圪緣層9係處於相互隔離的狀態，因而此種變質層μ 不造成像素電極1 〇間之表面傳導。 最:曼’藉由印刷及自旋塗敷，在整個基板丨上形成由聚酿 Μ寺構成之配向膜51 ’並實施摩擦等之特定配向處理（參 如上所述地製造主動矩陣型基板10。 因此，上述之主動矩陣型基板之製造方法藉由在膜厚方 85501 >23 - 200407642 向完全除去各像素電極丨〇間之有機絕緣層9，可將鄰接之各 有機纟巴緣層9彼此隔離。藉此，形成於各有機絕緣層9上之 各像素電極1 〇在表面傳導上可完全地絕緣。 另外，本發明並不限定於上述之實施形態，在不脫離本 發明旨趣之範圍内，可作各種改變來實施。 如上逑<TFT 30並不限定於反交錯型之構造，亦可為交 軋型《TFT。此外，切換元件並不限定於TFT，亦可為在金 屬層之間夹著絕緣層之MIM(金屬絕緣體金屬）構造之二極 再者，像素電極10之形狀並不限定於圖2所示之形狀，如 將本王動矩陣型基板使用於反射型之顯示裝置時，將像素 電極10之形成區域擴大至元件區域102及配線區域103，可 形成藉由掃描線15及信號線12所劃分之矩形形狀。亦即， 因反射型ϋ置之顯示不受像素電極1()内面側之構造 物的影響，所以使元件區域1Q2與像素,區域⑻完全地重疊 並且使像素區域丨0丨一部分重疊於配線區域1 ，可儘量 擴大像素區域1G1，因而可提高開口率，將反射之亮度提高 至最大限度。· n [實施例] 本發明人為求證實本發明之效果，藉由本發明之製造方 法實際地製作主動矩陣型基板。其結果說明如下。 、本實施例之主動矩陣型基板以上述第一種實施形態之構 造為基本，使用具右〗 、 、有1Q Ω《表面電阻之感光性丙缔基樹脂 作為有機絕緣層，並使㈣反射板作為像素電極。 85501 -24- 200407642 >此外，本貫施例為求於像素電極與源極之間獲得良好之接 觸電阻（約lOlcm)，係將電聚清除電力設定在約2〇〇 *。结 果有機絕緣層之表層部變質，表面電阻降低至ι〇9ω〜ι〇Πω。 ’、/人’將像素電極直接作為掩模，反應氣體係採用氨氣 3 00 SC⑽與％氣體3 sccm之混合氣體，在壓力為5〇鄭Γ ’電力為50 W《條件下進行電衆處理（乾式餘刻卜結果銘 與丙烯基樹脂之姓刻率的選擇比在i : i⑼以上，幾乎不指 傷銘而可僅除去丙晞基樹脂，可使表面電阻高之有機絕緣 層之基底部分露出。 【發明效果】 如以上所詳述，本發明因在像素電極設置使表面電 阻高之有機絕緣層之基底部分露出之凹部，所以可藉由此 種高電阻區域將鄰接之各像素電極在表面傳導上形成良好 絕緣狀態。藉此’可防止經由有機絕緣層之像素電極間之 電流«。此外’ n由於顯示裝置上採用此種主動矩㈣ 基板，可獲得高品質之顯示。 【圖式簡單說明】 圖1係顯示本發明第一種實施形態之顯示裝置之概略構 造之剖面圖，其中（a)，（b)分別顯示圖2之匕一 Ia，剖面及比― Ibf剖面圖。 圖2係顯tf本發明之顯示裝置之概略構造之俯視圖。 圖3係顯示本發明第一種實施形態之主動矩陣型基板之 製造万法；步驟圖，其中（a)，（b)分別顯示圖2之匕—&剖面 及I b — I b ’剖面圖。 85501 -25 - 200407642 圖4係顯示本發明第一種實施形態之主動矩陣型基板之 製造方法之步驟圖，其中（a)，（b)分別顯示圖^之匕―Ia，剖面 及Ib—Ib1剖面圖。 圖5係顯示本發明第一種實施形態之主動矩陣型基板之 製造方法之步驟圖，其中（a)5(b)分別顯示圖2<Ia_Ia，剖面 及lb—lb’剖面圖。 圖6係顯示本發明第一種實施形態之主動矩陣型基板之 製造方法之步·驟圖，其中（a)，（b)分別顯示圖2之匕—Ia，剖面 及Ib~ lb，剖面圖。 圖7係顯示本發明第一種實施形態之主動矩陣型基板之 製造方法之步驟圖，其中（a)，（b)分別顯示圖2之匕—Ia，剖面 及lb — lb’剖面圖。 圖8係顯示本發明第二種實施形態之之顯示裝置之概略 構造之剖面圖，其中⑷，（b)分別顯示圖2之u 士剖面及^ —Ib’剖面圖。 圖9係顯示本發明第 製造方法之步·驟圖，其 及lb — lb·剖面圖。 圖1 0係顯示本發明第 製造方法之步驟:圖，其 及lb — lb’剖面圖。 一種實施形態之主動矩陣型基板之 中（a)，（b)分別顯示圖2之；^—&剖面 二種實施形態之主動矩陣型基板之 中（a)，（b)分別顯示圖2之— ia，剖面 圖Π係顯示本發明第 製造方法之步驟圖，其 及I b — I b1剖面圖。 一種貫施形態之主動矩陣型基板_ 中（a)，（b)分別顯示圖2之；^一 u，剖1 85501 -26- 200407642 圖1 2係顯示透過型液晶顯示裝置之像素電極間之洩漏電 流與對比之關係圖。 圖1 3係顯示電漿清除對基板之電特性之影響圖，其中（a) 係顯示電漿清除之電力與形成像素電極之有機絕緣層表面 之表面電阻之關係圖，（b)係顯示電漿清除之電力與像素電 極/源極間之接觸電阻之關係圖。 【圖式代表符號說明】 1 基板 6 沒極 7 源極 9 有機絕緣層 10 像素電極 12 信號線 15 掃描線 16 接觸孔 30 T F 丁（切換元件） 50 T F T陣列基板（主動矩陣型基板） 60 相對基板 62 相對電極 70 液晶層（光調制層） 101 像素區域 102 元件區域 103 配線區域 G 凹部 85501 -27-8550J 200407642 tree = ^ j < circumferential layer 8 of the drill; and two of the organic insulating layer 9 composed of acryl-based resin, polyimide-based, benzocyclobutene polymer (BCB), etc.- Protect the TFT 30. In addition, the organic insulating layer 9 is a high-surface-resistance member with a surface resistance of 10 ohms or more. Furthermore, the stack of the organic insulating layer 9 is thicker than the substrate, so that the pixel electrode 10 is insulated from the DFT 30 and the wirings 15 and 12 to generate a large parasitic capacitance between the 3 pixel electrodes 10, and The organic insulating layer 9 of the film planarizes the substrate structure and white difference formed by the TFT 3Q and the wirings 15 and 12. In addition, a suitable acrylic resin is suitably used on the organic insulating layer 9, thereby simplifying the steps for forming the contact hole as described in the [k method] of the active matrix substrate. ^ A contact hole 16 ′ is formed above the source electrode and penetrates the insulating layers 8 and 9 in the film thickness direction. A pixel formed on the organic, silicon, and silicon layer 9 is cut through a conductive portion formed in the contact hole 16. The electrodes 丨 0 are electrically connected to the electrodes 7 disposed under the insulating layer 8. Furthermore, the non-pixel region of the organic insulating layer 9 such as the element region ⑻ and the wiring region 103 is provided with a recessed portion G formed by removing a part of the surface layer portion to form a state where the base portion of the organic insulating layer 9 is exposed. Since the surface of the recessed portion 0 shows a high surface resistance of 1x1013q as the base portion of the organic insulating layer 9, the adjacent pixel electrode is in a well insulated state on the surface. Then ten thousand; so constitute <substrate! As described above, an alignment film 5 j composed of polyimide or the like subjected to an alignment process such as rubbing or the like is formed so as to cover the pixel electrode ^ and the organic insulating layer 9. In addition, the 'opposite substrate 60' is formed on a transparent 85501 200407642 substrate body 61 made of glass, plastic, etc., and at least corresponds to, 肩, 肩 肩 域 & & 万, and is formed into transparent ones such as Ding 0 and IZO. An alignment film 63 made of polyimide or the like that is subjected to a specific alignment treatment is formed at a position corresponding to at least a display area of the substrate 61 with respect to the electric handle (, u, and electrode) 62. Then, the substrates 50 and 60 having the above-mentioned structure are coated with a thermosetting sealing material (not shown) in a rectangular frame shape, followed by a peripheral portion of the substrate, and a spacer member between the substrates 50 and 60 is disposed ( (Illustration omitted), the liquid crystal 70 is sealed in a certain space and sealed in a space enclosed by the substrate 50, 60 and the sealing material. The active matrix substrate of the present invention is exposed on the surface of the organic insulating layer 9 where the pixel electrode is not formed in the element region 102 and the wiring region ι3. The organic insulating layer 9 having a high surface resistance is exposed on the base portion. The recessed portion is adjacent to each pixel electrode 10. This high-resistance region forms an anti-insulation state on the surface conduction to prevent leakage of current between the pixel electrodes 1Q. In addition, by constructing a display device using such an active matrix substrate that prevents current leakage between pixel electrodes, a high-quality display can be obtained. In particular, when such a king matrix substrate 50 is used in a transmissive liquid crystal display device, the surface resistance of the concave portion G is 1 × 10 ηΩ, so the contrast of the display can reach 300 or more (see FIG. 12). In addition, the uppermost portion of the organic insulating layer 9 formed under the pixel electrode 10 is subjected to electric mass processing applied in a method for manufacturing an active matrix substrate described later to form a modified resistance layer 14 having a reduced resistance. [Manufacturing method of active matrix type substrate] Next, a method of manufacturing a TFT array substrate will be described with reference to FIGS. 3 to 7 as 85501 -16-200407642. The method of manufacturing an active matrix type substrate 50 of the present invention. First, on a substrate 1 such as glass and plastic, a TFT 30, a scanning line 15, and a signal line 12 as shown in Figs. 3 (a) and 3 (b) are formed by a well-known method. The manufacturing method of such a TFT 30 is to firstly form metal, thin, crane, copper, chromium, copper, chromium, and other metals or alloy films including these on the substrate, and then perform photoetching steps and etching. Steps and steps to form the gate 2 and the scanning line 15 pattern. Next, a gate insulating layer 3 made of a silicon-based insulating film such as silicon oxide and silicon nitride is formed thereon by plasma CVD, sputtering, and the like. Then, without being exposed to the air, an i-type semiconductor layer 4 and an n-type semiconductor layer 5 made of a-silicon or the like are formed, and then subjected to a photo-etching step and a lithography step. The semiconductor layer *, $ is formed into an island pattern. Next, aluminum, self, tungsten, rhenium, aluminum, copper, metal, or alloy films containing these are formed thereon by sputtering, and the drain 6 source 7 and bluff line 12 are formed by money engraving. pattern. Next, the drain 6 and the source 7 are used as masks, and the n-type semiconductor layer 5 is etched to separate them. Secondly, by covering these TFTs 30, scan lines 15, and signal lines 12 'by plasma CVD, an inorganic insulating layer 8 made of nitrogen cut (SiNx) 8 is formed on the substrate 1' continue 'by spin coating Apply the organic insulating layer 9 made of acryl-based resin, polyimide-based resin, BCB, or the like to flatten the p! Difference structure of TFT 30 and wiring 15, 12 as much as possible. Then, a through hole is formed in the organic insulating layer 9 on the source electrode 7. When a photosensitive resin is used for the organic insulating layer 9 at this time, since the organic insulating layer 8 is exposed and developed, through-holes are formed in the organic insulating layer 9, so that the manufacturing steps can be simplified. In addition, when a non-photosensitive resin is used, a through-hole is formed by a dry name or the like. 8550] -17-200407642 Secondly, the organic insulating layer 9 is used as a mask, and dry reaction is performed using a reaction gas of SF6, oxygen, and argon to remove the inorganic 2 edge layer 8 on the bottom surface of the through hole to form a self-organic insulation. The surface of the layer 9 leads to the contact hole of the source electrode 7 (refer to FIGS. 4 (a) and 4 (b)). At this time, the exposed source 7 surface is contaminated by etching residues and natural oxide films, so it needs to be carried out. Clean the surface treatment in the contact hole 16. Specifically, using the insulating layers 8, 9 as a mask, plasma removal (anti-occlusion) using argon is performed to remove residues and natural oxide films on the source electrode 7. 13 (refer to FIGS. 5 (a) and 5 (b)). In addition, by the plasma removal, the surface of the organic insulating layer 9 is partially carbonized to form a deteriorated layer with a small resistance. Next, the inner surface of the contact hole 16 is included. A conductive film is formed on the insulating layers 8 and 9 by sputtering, and a plurality of pixel electrodes 10 are formed into a matrix pattern by etching (see FIGS. 6 (a) and 6 (b)). When a matrix substrate is used in a transmissive liquid crystal display device, this conductive film forms light transmission such as IT0 and IZ〇. When a conductive film with high properties is used in a reflective display device, a conductive film with high light reflectivity, such as aluminum, is formed. Next, it is performed to restore the edge property of the surface of the organic insulating layer 9 where the pixel electrode 10 is not formed. Change the properties or remove the surface treatment of the surface layer portion of the organic insulating layer 9. Therefore, in the above-mentioned plasma removal step, the low-resistance altered layer 14 formed on the surface of the organic insulating layer 9 may be used in adjacent pixel electrodes. A current leakage occurs between 10 and 10 '. Specifically,' by dry etching using the pixel electrode as a mask, a part of the surface layer portion of the organic insulating layer 9 is removed, and the pixel electrode 10 is not formed on the surface of the organic insulating layer 9. Region (that is, the element region 1 02 and the wiring region 85501 -18-200407642 103) 'form the base portion of the organic insulating layer 9 having a high surface resistance and the region is formed (the recessed portion GX is shown in FIG. 7 (a) and FIG. 7 (b)). Using the method of removing the metamorphic layer, there is no need to consider the integration with other processes, which will not damage the freedom of processing as before. In addition, when the pixel electrode 10 itself is used as a mask for dry money engraving, The mask for money engraving must be set again to simplify the manufacturing steps. At this time, in order to avoid damaging the pixel electrode 10, the reaction gas system uses a gas (F), oxygen (〇) including h SF6, CF4, Cl2, HC1, Bcl3, etc. ), At least one of the reaction gas of chlorine (α). This reaction gas is etched by ITO, etc. By using this gas, the damage to the pixel electrode 1 () can be suppressed as much as possible, and only for the organic insulating layer Carry out the last name engraving. Alternatively, after forming a protective film on the pixel electrode 10, use the protective film as a masking material as described above.] By this, it is possible to prevent the pixel electrode from hearing damage. The above protective film may A photoresist layer stacked on the pixel electrode 1 () when the pixel electrode 1G is patterned is used. In forming the pixel electrode, the photoresist can be reused without stripping the photoresist, and it is not necessary to form a protective film again, which can simplify the manufacturing steps. In particular, since metals such as aluminum and chromium are easily etched by ^ 2, HO, and modest, so when dry etching is performed using a reaction gas containing chlorine, it is desirable to cover the pixel electrode 10 with a protective film such as a photoresist. In addition, although the conditions for plasma removal must also be considered, since the thickness of the altered layer 14 is approximately 5 nm, the amount of dry etching should be approximately 5 nm to 20 nm. Thereby, the base portion of the organic insulating layer 9 having the surface resistance south can be surely exposed. After taking out, an alignment film 5 made of polyimide or the like is formed on the entire substrate 丨 by printing and spin coating, and a specific alignment treatment such as rubbing is performed (see Fig. 1). ... 85501 19 200407642 The TFT array substrate 50 is manufactured as described above. Therefore, 'the above-mentioned active matrix substrate manufacturing method removes the element region 1 02 and the wiring region 103 by dry etching, and does not form the B-domain < organic insulating layer 9 surface layer portion, so the adjacent pixel electrode 1 〇The formation of the concave surface of the organic insulating layer 9 exposed on the base surface has a high surface resistance depression. Shao G: By this, each adjacent pixel electrode is formed on the surface conduction :: The edge state can prevent the pixel electrode Current leakage. , E At this time, the dry etching is performed by using a reaction gas containing at least one of fluorine (F), oxygen (0), and chlorine (α) *, so that the organic insulating layer can be etched as much as possible to prevent damage to the pixel electrode. 9. In addition, the active matrix substrate of this embodiment is an insulating substrate on the main body < substrate 1; however, in addition, an insulating film may be formed on a conductive substrate such as stainless steel. The above-mentioned T-print 30 and various wirings 15, 12 are formed on the film. In addition, the insulating layer 'that insulates the TFT 30 and the wirings 15 and 12 from the pixel electrode 10 is not limited to the above-mentioned structure composed of the inorganic insulating layer 8 and the organic insulating layer 9: For a layer structure, only the organic insulating layer 9 may be used. . In addition, instead of forming the overall resistance to 1 X 1013 Ω, the electrical group of the surface layer portion of the recessed portion G formed only by a specific surface treatment may be formed in the organic insulating layer 9. In addition, the above-mentioned light modulation layer 70 may be used in addition to / from day to day, and 5F can be used in a dispersion medium to disperse colored charged particles. The display device can be formed into an electrophoretic display device. In addition, Gu Shizhuang Jin Shi 1 does not show the form and can be any of the transmissive, reflective, or transflective forms. 85501 -20-200407642 [Second embodiment] [Substrate of active moment model and display device using the same] Fig. 8 is a plan view for explaining the structure of the active matrix substrate of the present invention. In addition, FIG. 8 (a) to FIG. (U) each show a cross section of FIG. 2 and a sectional view, and FIG. 8 (b) to FIG. 11 (b) respectively show a generalized view of FIG. In addition, the film thickness and the ratio of the dimensions of each constituent are appropriately adjusted. In addition, the same structures as in the first embodiment described above are denoted by the same reference numerals, and a part of the explanation is omitted, and FIG. 2 is used for explanation. As shown in FIG. 8, the display device of this embodiment is the same as the first embodiment shown in FIG.}, And adopts an active-type substrate 50 and holds it as light between the opposite substrate I and the opposite substrate 6G <. Structure of the liquid crystal layer of the modulation layer. The active matrix substrate 50 is the same as the one described in the first embodiment described above. The substrate body 1 is provided with a plurality of Jinshi men, who are arranged in the line of universal scanning lines 15 and A plurality of signal lines 12 arranged in the row direction are provided with a TFT 3Q as a switching element near the intersection between each scanning line 15 and the signal line 12. In addition, a two-layer insulating layer composed of an inorganic insulating layer 8, a substrate, and a substrate 9 is stacked on the substrate, and a pixel electrode is further formed on the organic insulating layer 9. Ben: Her active matrix substrate 50 is not the same as the first embodiment described above. It is not at all. It does not form a recess G ′ on the organic insulating layer 9 between the pixel electrodes 10 and is tied to the film thickness. The direction completely removes the organic insulation of the pixel electrode = layer 9. The structure of the other active matrix substrate 5q, and the structure of the display device using it are the same as those of the first embodiment described above, so the description is omitted. 85501 -21-200407642 In other words, the organic insulating layer 9 is formed in an island shape on the removal of the wiring area 〇03 (that is, the area including the pixel area ⑻ and the element area 1 () 2), and the organic insulation in other areas ^ Structure in which layer 9 is completely removed. Therefore, a plurality of organic insulating layers 9 are arranged in a checkerboard shape without being connected to each other in a rectangular area divided by the scanning lines 15 and the signal lines 12, and are isolated from each other via the alignment film 51. (1) Pixel electrodes 10 are formed on each of the organic insulating layers 9 formed in a checkerboard shape, and are electrically connected to a source electrode 7 disposed below the inorganic insulating layer 8 via a contact hole 16. Therefore, the active matrix substrate of the present embodiment can substantially completely insulate the adjacently arranged pixel electrodes 1G on the surface. Thereby, current leakage between the pixel electrodes 10 passing through the organic insulating layer 9 can be completely prevented. In addition, as described above, although the active matrix substrate of this embodiment uses the formation region of the island-shaped organic insulating layer 9 as the pixel region 101 and the element region = 102, the adjacent organic insulating layers 9 In a state of being isolated from each other, the above-mentioned formation area may be overlapped on the wiring area 13. [Manufacturing method of active matrix type substrate] The manufacturing method of the active matrix type substrate of Shi Xingzhe, the manufacturing method of the active matrix type substrate before the manufacturing step and the first embodiment described above This is the same, so only the subsequent steps will be described below with reference to FIGS. 9 to 11. In this manufacturing method, an inorganic insulating layer 8 made of silicon nitride (SiNx) is formed by plasma CVD on a substrate 1 having TFTs 30, scan lines 15, and signal lines 12 formed thereon. /, / In, spin coating to coat the organic insulating layer 9 made of acrylic resin, polyimide 85501 -22-200407642 series resin or BCB, etc., try to use Ding FT 30 and wiring I5 The step structure of 12 is flattened. Then, a through hole is formed in the organic insulating layer 9 above the source electrode 7, and the organic insulating layer 9 in the wiring region 103 (i.e., the region except the pixel region 101 and the element region 102) is removed. Thereby, in each area divided by the scanning line 15 and the signal line 12, a rectangular organic insulating layer 9 is formed one by one without being connected to each other, and is thus formed on the substrate 1 (a plurality of organic insulating layers 9 are arranged to Then, using the organic insulating layer 9 as a mask, dry etching using a reaction gas of SF6, oxygen, and argon was performed to remove the inorganic insulating layer 8 formed on the bottom surface of the through hole above the source electrode to form a contact hole 16 (Refer to Fig. 9 (a) and Fig. Qing.) Next, using the insulating layers 8 and 9 as a mask, the inside of the contact hole 16 is cleaned by using a polycondensation (anti-radiation) method of chlorine gas, and the source electrode 7 is removed. The last name is engraved residue and natural oxide film 13 (refer to FIG. 10 (〇, FIG. 100)). Secondly, on the insulating layers 8 and 9 including the inner surface of the contact hole 16, conduction is formed by money emission. The film 'also forms a pattern of each pixel electrode 10 on each of the checkerboard-shaped organic insulating layers 9 (see FIG. U (a), FIG. Ii (b)). In addition, the organic insulating layer 9 is damaged due to electrical contamination. The metamorphic layer 14 is formed, but because each organic marginal layer 9 is isolated from each other, And this kind of deteriorated layer μ does not cause surface conduction between the pixel electrodes 10. Most: Mann 'forms an alignment film 51' composed of polyimide M on the entire substrate by printing and spin coating, and performs rubbing. And other specific alignment processes (refer to manufacturing the active matrix substrate 10 as described above. Therefore, the above-mentioned active matrix substrate manufacturing method removes each pixel electrode between the film thickness square 85501 > 23-200407642). The organic insulating layer 9 can isolate adjacent organic thin film edge layers 9 from each other. Thereby, each pixel electrode 10 formed on each organic insulating layer 9 can be completely insulated on the surface conduction. In addition, the present invention It is not limited to the above-mentioned embodiment, and various changes can be implemented without departing from the scope of the present invention. As described above, < TFT 30 is not limited to the structure of the de-staggered type, and may be a cross-rolling type "TFT In addition, the switching element is not limited to a TFT, and may be a bipolar MIM (Metal Insulator Metal) structure with an insulating layer sandwiched between metal layers, and the shape of the pixel electrode 10 is not limited to that shown in FIG. 2 Form For example, when the matrix substrate is used in a reflective display device, the formation area of the pixel electrode 10 is enlarged to the element area 102 and the wiring area 103, and a rectangle divided by the scanning lines 15 and the signal lines 12 can be formed. That is, since the display of the reflective arrangement is not affected by the structure on the inner surface side of the pixel electrode 1 (), the element region 1Q2 is completely overlapped with the pixel, region ⑻, and part of the pixel region is overlapped with The wiring area 1 can enlarge the pixel area 1G1 as much as possible, so that the aperture ratio can be increased and the brightness of reflection can be maximized. · [Example] In order to verify the effect of the present invention, the manufacturing method of the present invention practically Fabricate an active matrix substrate. The results are explained below. The active matrix substrate of this embodiment is based on the structure of the first embodiment described above, using a photosensitive acrylic resin with a surface resistance of 1Q Ω and a surface resistance of 1Q Ω as the organic insulating layer, and a chirping reflector As a pixel electrode. 85501 -24- 200407642 > In addition, in the present embodiment, in order to obtain a good contact resistance (about 101 cm) between the pixel electrode and the source, the electro-clearing power is set to about 200 *. As a result, the surface layer portion of the organic insulating layer was deteriorated, and the surface resistance was reduced to ω9ω to ι〇Πω. ', / 人' uses the pixel electrode directly as a mask, and the reaction gas system uses a mixed gas of ammonia gas 3 00 SC⑽ and% gas 3 sccm, under a pressure of 50 Zheng ′ 'electricity is 50 W, and the electricity is processed (The selection ratio of the inscription of the dry type inscription and the surname of the acrylic resin is more than i: i ，, which hardly refers to the inscription, and only the acrylic resin can be removed, and the base portion of the organic insulating layer with high surface resistance can be removed. [Effect of the Invention] As described in detail above, the present invention provides a recessed portion of the pixel electrode that exposes the base portion of the organic insulating layer having a high surface resistance, so that adjacent pixel electrodes can be positioned in such a high-resistance region. A good insulating state is formed on the surface conduction. By doing so, 'the current between the pixel electrodes through the organic insulating layer can be prevented.' Also, because the active moment substrate is used on the display device, a high-quality display can be obtained. [Schematic Brief Description] Fig. 1 is a cross-sectional view showing a schematic structure of a display device according to a first embodiment of the present invention, in which (a) and (b) respectively show a dagger Ia, a cross section and a ratio of Fig. 2- Ibf cross-sectional view. Fig. 2 is a top view showing a schematic structure of a display device of the present invention of tf. Fig. 3 is a method of manufacturing an active matrix substrate of the first embodiment of the present invention; a step chart, in which (a), ( b) The dagger- & section and Ib-Ib 'section of Figure 2 are shown respectively. 85501 -25-200407642 Figure 4 is a step diagram showing a method for manufacturing an active matrix substrate of the first embodiment of the present invention, Among them, (a) and (b) show the dagger-Ia, cross-section, and Ib-Ib1 cross-sectional views of Fig. ^, Respectively. Fig. 5 is a step diagram showing a method for manufacturing an active matrix substrate of the first embodiment of the present invention, where a) 5 (b) shows the sections <Ia_Ia, cross section, and lb-lb 'section of FIG. 2 respectively. FIG. 6 shows steps and steps of the manufacturing method of the active matrix substrate of the first embodiment of the present invention, where (a ), (B) shows the dagger-Ia, cross section and Ib ~ lb, cross-sectional view of Fig. 2. Fig. 7 is a step diagram showing a method for manufacturing an active matrix substrate of the first embodiment of the present invention, in which (a) (B) shows the dagger-Ia, section and lb-lb 'sections of Fig. 2, respectively. Fig. 8 is a cross-sectional view showing a schematic structure of a display device according to a second embodiment of the present invention, in which ⑷, (b) shows the u-section and ^ -Ib 'section of Fig. 2, respectively. Fig. 9 shows this Steps and steps of the manufacturing method of the present invention, and its lb-lb · cross-sectional view. Figure 10 shows the steps of the manufacturing method of the present invention: Figure, its and lb-lb 'cross-sectional view. An active matrix type of embodiment Among the substrates, (a) and (b) respectively show FIG. 2; ^ — & Sections of the active matrix substrate of the two embodiments are shown in (a) and (b) of FIG. 2 — ia, respectively It is a step chart showing the manufacturing method of the present invention, and a sectional view of I b-I b1. An active matrix substrate in a form __ (a) and (b) are shown in FIG. 2 respectively; ^ a u, section 1 85501 -26- 200407642 Figure 1 2 shows the distance between pixel electrodes of a transmissive liquid crystal display device Diagram of leakage current versus comparison. Figure 13 shows the influence of plasma removal on the electrical characteristics of the substrate. (A) is a diagram showing the relationship between the power of the plasma removal and the surface resistance of the surface of the organic insulating layer forming the pixel electrode, and (b) is the display The relationship diagram between the power removed by the paste and the contact resistance between the pixel electrode / source. [Illustration of representative symbols of the figure] 1 substrate 6 electrode 7 source 9 organic insulating layer 10 pixel electrode 12 signal line 15 scanning line 16 contact hole 30 TF D (switching element) 50 TFT array substrate (active matrix substrate) 60 Opposite Substrate 62 Counter electrode 70 Liquid crystal layer (light modulation layer) 101 Pixel area 102 Element area 103 Wiring area G Concave portion 85501 -27-