TW200407445A - Die cast sputter targets - Google Patents

Die cast sputter targets Download PDF

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Publication number
TW200407445A
TW200407445A TW092100050A TW92100050A TW200407445A TW 200407445 A TW200407445 A TW 200407445A TW 092100050 A TW092100050 A TW 092100050A TW 92100050 A TW92100050 A TW 92100050A TW 200407445 A TW200407445 A TW 200407445A
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Taiwan
Prior art keywords
stamper
casting
cavity
casting material
scope
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TW092100050A
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Chinese (zh)
Inventor
Michael Thomas
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Honeywell Int Inc
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Publication of TW200407445A publication Critical patent/TW200407445A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22DCASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D27/00Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
    • B22D27/04Influencing the temperature of the metal, e.g. by heating or cooling the mould
    • B22D27/045Directionally solidified castings
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22DCASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D25/00Special casting characterised by the nature of the product
    • B22D25/02Special casting characterised by the nature of the product by its peculiarity of shape; of works of art
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Die cast sputter targets, and methods and devices that facilitate formation of die cast sputter targets. Materials to be used in casting a sputter target are melted in a crucible, poured into a die, and allowed to cool to form the sputter target. The die utilizes heated sidewalls and a cool base to promote bottom to top solidification and a target having uniform top solid interfacial propagation. The die cast sputter target can be used to form layers in microelectronic devices.

Description

0) 0) 200407445 玖、發明說明 (¾月況聽敘明.發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明 本發明概括有關於濺鍍靶材之形成。 先前拮術 ,濺鑛革巴材係需要更乾淨及更合乎成本效益而以更小的特 丄尺寸來符口各戶的需求,已知可在靶材受到濺鍍時利用 較、、、田顆粒靶材來降低電弧放電(arcing),且其亦增高靶材的 強度(故可使用於高功率應用中),通常利用濺㈣材在微機 電元件中形成各層。 戈鍍乾材通$由~胚製成’允許此鑄胚以緩慢速率冷卻 、切割及鍛造藉以精製平均顆粒尺寸並使金屬增高強度, 時㈣用ASTM標準E112_ “用於決定平均顆粒尺寸之標準 測试方法”及/或E1 3 82-“利用本白叙]r占a δΖ㈣+自動及自動影像分析來決定 平均顆粒尺寸之標準測試方法,,來決定顆粒尺寸。 锻造程序由於具有複雜的機械加工並因為產生機械加工 ::的材料損失所以很昂貴’這在需用很昂貴的高純度金 生具有稷雜形狀的_乾材時尤其會造成問題。並且 ,由於熱鍛造時常導致靶材在延导 ^ τ 牡、長的時間中保持升高的溫 又而使平均顆粒尺寸對應地增高, 需要的小顆粒尺寸。 產生所 一直需要合乎成本效益之具有榀 桎、项平均顆粒尺寸的濺鍍 革巴材之製造方法,藉以具有較高 , 勺革巴材機械強度以及濺鍍 期間較小的潛在電孤放電。 發明内交 2004074450) 0) 200407445 发明, description of the invention (A month's time listening to the description. The technical field to which the invention belongs, the prior art, contents, embodiments and drawings are briefly explained. The present invention generally relates to the formation of sputtering targets. , Sputtered leather and bar materials need to be cleaner and more cost-effective, and meet the needs of different households with smaller size. It is known that when the target is sputtered, it can be used to target In order to reduce arcing, and it also increases the strength of the target (so it can be used in high-power applications), it is common to use sputtering materials to form layers in micro-electromechanical components. Ge Plating Dry Materials This allows the casting to be cooled, cut, and forged at a slow rate to refine the average particle size and increase the strength of the metal. ASTM Standard E112_ "Standard Test Method for Determining Average Particle Size" and / or E1 3 82 -"Using this white description] r to account for a δZ㈣ + automatic and automatic image analysis to determine the average particle size of the standard test method to determine the particle size. Forging procedures due to the complex mechanical processing and工 :: Material loss is very expensive 'This is especially a problem when very expensive high-purity gold raw materials with a doped shape _ dry material are needed. Moreover, the target material is often extended due to hot forging ^ τ 牡To maintain the elevated temperature for a long time and increase the average particle size correspondingly, the required small particle size. The production of cost-effective, sputter-coated leather materials with average particle size is always required. Method, which has higher mechanical strength and lower potential electrical solitary discharge during sputtering. 发明 内 交 200407445

(2) 本發明係有關於模鑄濺鐘把材以及利於形成模禱賤錢革巴 材之方法及裝置,將用於鑄造一濺鍍靶材的材料在一坩堝 中―融化、倒入一壓模中並允許其冷卻以形成濺鍍靶材。壓 杈利用加熱的側壁及一冷基底來促進從下往上的固體化作 用,亚使一靶材具有均勻的固體介面性傳播。部份情形中 ,可藉由簡單地以比基底更慢的速率將熱量傳出壓模=側 壁來取代加熱的側壁,利用此等壓模可以允許小心地控制 流入與流出壓模的熱量,可以藉由控制從下往上的冷:作 用來避免在元件中生成孔隙或空洞。 將靶材鑄成最終形狀是有利的方式,因為此等靶材鑄造 之後只需要極少或根本不需要機械加工。降低或消除靶材 2機械加工係可減少生產㈣所需要之時間與費用、亦減 少產生的廢料量以及所需完成的廢料處理量。 “藉由諸如利用-具有加熱的侧壁及一冷卻的基底之壓模 來控制流入與流出壓模的熱量,更能夠控制顆粒的成長, 特別是顆粒成長的方向性、顆粒尺寸及隔離方面。受鑄造 ^革巴材之快it冷卻將有助於控制顆粒的長晶及成長以及平 句顆粒尺寸並有助於避免隔離,革巴材生產中的高冷卻/固體 化速率將導致所形成靶材中具有小的顆粒尺寸,利用冷卻 期間對於顆粒成長的雜質固定抑制(impurity pinned MPpression)亦可促進小的顆粒尺寸。 在靶材具有很鬲尺寸比而使直徑遠大於厚度之情形中 在固體化期間可能不需要加熱壓模的側壁,譬如,若一 15 口寸直徑㈣材為具有W理想厚度的鑄造件,則侧壁熱(2) The present invention relates to a method and a device for die-casting splash bell handles and materials that are beneficial to the formation of die-casting base materials. The material used for casting a sputtering target in a crucible-melt, pour into The stamper is allowed to cool to form a sputtering target. The press utilizes heated sidewalls and a cold base to promote solidification from the bottom to the top, so that a target material has a uniform solid interface propagation. In some cases, the heated sidewall can be replaced by simply transferring heat out of the mold at a slower rate than the substrate. The use of these molds can allow careful control of the heat flowing into and out of the mold. Avoid the formation of pores or voids in the component by controlling the bottom-up cold: effect. Casting the target material into the final shape is an advantageous method because such target materials require little or no machining after casting. Reducing or eliminating targets 2 Mechanical processing can reduce the time and cost required to produce plutonium, reduce the amount of waste generated, and the amount of waste processing required. "By using, for example, a stamper with heated sidewalls and a cooled substrate to control the heat flow into and out of the stamper, it is possible to control the growth of particles, especially the direction of particle growth, particle size and isolation. The rapid it cooling by casting ^ Geba material will help control the growth of the particles and the particle size of the sentence and help avoid isolation. The high cooling / solidification rate in the production of Geba material will lead to the formation of targets The material has a small particle size, and the use of impurity pinned MPpression for particle growth during cooling can also promote small particle size. In the case where the target has a very large size ratio and the diameter is much larger than the thickness, it is solid. It may not be necessary to heat the side wall of the stamper during the forming process. For example, if a 15-inch-diameter saber material is a casting with a desired thickness, the side wall is heated.

-6- 200407445 (3) 量移除在固體化期間只會影響自外徑邊緣〜W的一區域 品或二、、:歷部份實體的厚度減小而有部份空腔或孔隙 :旦可由:單的機械加工予以移除。部份情形中,因為強力 :::通韦不發生在此區域中,所以可將此材料留下依照現 狀使用。 可=修改將液體金屬導入腔體之速率來支持更均勾的 令I7 y'由於較佳從靶材下方往靶材上方 以對於林需―:欠導人所有材料。 I利關模設計來消除腔體及孔隙,特定言之係利用稱 之融化金屬的貯槽,利用-諸如陽極化表面等硬塗 覆:放層將利於絲材已經固體化之後從壓模移晴, ==選擇此塗層亦有利於所形成㈣材與 熱傳作用。 j =而言’利用上述方法來鑄造具有良好合金劑分佈之 ==係應該可崎材的生產成本矩幅降低至使 不、’、又k的成本以下,並應該可大幅縮短靶材形成所兩 要的時間且可以形成極貴及/或無法鍛造或機械加工之革: 才亦預見使用此等方法可大幅加強在不同| 精確的形成靶材之能力。 王面 可從本發明較佳實施例的下文詳細描述及 得知本發明之各種目的、特性 '型態及優點,其=二也 編號代表類似的元件。 員彳乂的 本文所用的“濺鍍革巴分,,总a 7 m 观年巴材係包括可用以濺鍍及具有包括圓 200407445-6- 200407445 (3) The amount removal during solidification will only affect the area of the area from the outer diameter edge to W or the thickness of some solids and some of the cavities or pores: denier It can be removed by: single machining. In some cases, because the powerful ::: Tonway does not occur in this area, this material can be left to use as it is. May = modify the rate of introducing liquid metal into the cavity to support a more uniform hook. Let I7 y 'be better from below the target to above the target. For forestry needs: --- Induced all materials. I The mold is designed to eliminate cavities and pores, specifically to use a storage tank called molten metal, using-such as hard coating such as anodized surface: the layer will help the wire has been solidified to move from the mold. , == Selecting this coating is also conducive to the formation of rafters and heat transfer. j = In terms of 'using the above method to cast a good alloying agent distribution == It should be possible to reduce the production cost of Kozaki to below the cost of No, K, and K, and should greatly reduce the target formation site. Two important times and the formation of extremely expensive and / or impossible to forge or machine leather: It is also foreseen that the use of these methods can greatly enhance the ability to accurately form targets in different | Wang Nian The various purposes, characteristics, types and advantages of the present invention can be understood from the following detailed description of the preferred embodiments of the present invention, and the two numbers also represent similar elements. The “sputtered leather” used in this paper is a total of 7 m. The material of the year-old Pakistani material includes materials that can be used for sputtering and has a round shape. 200407445

(4) 柱形等任何形狀之任何線圈或其他組件。 本文所用的“層體”係包括薄膜及塗層。 圖1中,一鑄造系統包含壓模1〇〇及坩堝2〇〇,圖中亦顯示 部份形成的靶材300,鑄造靶材3〇〇中所用的材料在坩堝2〇〇 中融化、倒入壓模100中、允許其冷卻以形成靶材3〇〇,利 用加熱的侧壁及一冷(較佳為水冷式)基底來控制流入與流 出壓模100的熱量,以促進從下往上的固體化作用並使一靶 材具有均勻的固體介面性傳播。可依需要使用模子的低溫 冷卻作用。 應注意在某些實施例中,如果經過側壁離開壓模腔體之 熱傳率係充分低於經過壓模底部之熱傳率,則可使用具有 未加熱的側壁之壓模。 底部受到冷卻且側壁受到加熱之不起反應性壓模100係 包含壓模腔體110、壓模襯墊120、壓模基底13〇及壓模側壁 140。最好將壓模腔體丨〗〇的尺寸與維度定為可允許靶材3〇〇 鑄成其最終需要的形狀。襯墊120較佳為一種不會與革巴材 300的融化金屬相互作用(不起反應)之高熱傳導性、高溫材 料。一種CVD鑽石狀塗層是目前使用作為襯塾12 〇之較佳材 料。壓模基底1 3 0較佳為一高熱傳導性且底部冷卻的板,諸 如表面上塗覆有一夠厚的鑽石狀塗層(襯墊12〇)之銅板,較 佳的基底具有大於或等於紹的熱傳導性,可使用由具有與 融化金屬充分不起反應之鈕(Ta)、氮化鈕或其他耐火材料組 成的塗層’俾在沉積與冷卻之後可從壓模中釋出。亦可堂 試在基底130邊緣提供比中心更高的冷卻能量,此將有助於 (5) (5)200407445(4) Any coil or other component of any shape, such as a cylinder. As used herein, a "layer" includes films and coatings. In FIG. 1, a casting system includes a stamper 100 and a crucible 200. The figure also shows a partially formed target 300. The material used in the casting target 300 is melted and poured in the crucible 200. Enter the die 100 and allow it to cool to form the target 300. Use heated sidewalls and a cold (preferably water-cooled) substrate to control the heat flowing into and out of the die 100 to promote bottom-to-top Solidification effect and make a target have uniform solid interface propagation. Low temperature cooling of the mold can be used as required. It should be noted that in some embodiments, if the heat transfer rate leaving the die cavity through the side wall is sufficiently lower than the heat transfer rate through the bottom of the die, a die with unheated side walls may be used. The non-reactive stamper 100, which is cooled at the bottom and heated at the side wall, includes a stamper cavity 110, a stamper pad 120, a stamper base 130, and a stamper side wall 140. It is best to set the dimensions and dimensions of the die cavity to allow the target 300 to be cast into its final desired shape. The gasket 120 is preferably a highly thermally conductive, high-temperature material that does not interact (not react) with the molten metal of the leather material 300. A CVD diamond-like coating is the preferred material currently used as a substrate. The stamper substrate 130 is preferably a highly thermally conductive and bottom-cooled plate, such as a copper plate with a diamond-like coating (pad 12) thick enough on the surface. The preferred substrate has a thickness greater than or equal to Thermally conductive, a coating consisting of a button (Ta), nitride button, or other refractory material that is sufficiently non-reactive with molten metal can be used, which can be released from the stamper after deposition and cooling. Also try to provide higher cooling energy at the edge of the base 130 than at the center, which will help (5) (5) 200407445

獲得均句之靶材/材料300的方向性固體化作用。壓模側壁 140最好可受熱,但部份情形中可能只簡單地具有低的熱傳 導性或另適於以小於基底熱傳率的丨〇 %之熱傳率將熱傳出 壓模腔體外。在某些情形中,壓模/模子1〇〇的腔體11〇將為 圓柱形。壓模基底130亦可依需要而從不需要襯墊12〇之材 料中選出,諸如英高鎳™ (Inc〇nelTM)或赫史特合金tm (Hastelloy™)等超合金。材料表面的先天陽極化對於壓模腔 體已經足夠而不需要襯墊。如前述,壓模側壁14〇未必需加 熱,但最好能夠受到加熱以產生高完整性的鑄造體部外侧 邊緣。 亦想見可能需要改變經過基底130及側壁140的不同部 份之熱流,其中可能利用多重加熱及冷卻元件,藉以允許 對於靶材300的鑄造具有額外性質的控制作用。坩堝2⑽ 包含高溫貯槽210、高溫閥220、嘴槽23〇及感應線圈25〇 ,亦想見可使用任何適當的融化材料來源對於壓模1〇〇提 供材料,但任何此類來源較佳均包含一種用於控制材料進 入壓模1〇〇的流率之機構,故可控制流率以促進靶材3〇〇 的均勻冷卻。嘴槽230亦可在摩模1〇〇上方具有多個類似蓮 蓬頭狀的開口以確保將融化金屬快速及平均地輸送入壓 杈腔體内而在其中快速地固體化。亦可想見可由數種方式 達成融化材料的融化作用,其中包括但不限於使用感應線 圈及電子束。 靶材300形成及包含在屢模100中,如圖〗所示,靶材3〇〇 的材料在介面310以下為固體而在介面训以上為融化狀。 (6) (6) 200407445 戀: 可〜見乾材3G()中所選用材料的組成物 定應用而改變,u 伙…、軍巴材300的特 來可利用料包括銘、1呂合金及銅,未 、曰方式製造譬如鈦及料更高溫金屬系統。此 料:二::劑導:融,金屬以加強所形成的固體乾材材 二二、長性λ將是有利的方式,但可想見若雜質導 二 =中將可能在冷卻期間促進物巴材性質所需 =:成長的雜質固定抑制作用,“式有助於在固體 化私序中保持細小的平均顆粒尺寸。 顯示材料/靶材3°°的固體化方向’鑄造期間經過 巴的,、、、流主要係位於固體化方向之相反方向中,雖缺在 典型的壓模中係經由壓模的側邊與底部發生熱量損失,但 [杈100之加熱的側壁及冷卻的底部板可允許以更線性方 式發生熱量流動與冷卻而具有一對應的從下往上顆粒成長 方向。若側壁並未受到加熱’利用一冷卻的底板及絕緣的 側壁亦可確保快速的垂直固體化及稠密的革巴材。在任何情 中句可心見’使壓板底部冷卻至形成乾材的融化材料融 點之70%、更佳2〇%將利於所需要的顆粒成長。 -種使用圖1的鑄造系統之方法可能包括以下步驟:將高 純度材料於真空或惰性氣體下放置在一高溫融化容器/坩 網200中以免形成氧化物。以一諸如感應線圈25〇等感應或 電子束來源融化金屬/材料。裝設一壓模1〇〇,此壓模1〇〇具 有加熱的侧壁140及一高傳導性底部冷卻的板/基底13〇且 使其所有内表面塗覆有一種高傳導性不起反應的高溫材料 作為不與融化金屬起反應之襯墊12〇。融化的金屬從融化容 -10- 200407445The directional solidification effect of the target / material 300 of uniform sentence was obtained. The mold sidewall 140 is preferably heat-resistant, but in some cases may simply have low thermal conductivity or may be otherwise suitable for transferring heat out of the mold cavity at a heat transfer rate of less than 10% of the substrate heat transfer rate. In some cases, the cavity 11 of the stamper / die 100 will be cylindrical. The die base 130 can also be selected from materials that do not require a pad 120, such as a super alloy such as Inconel ™ or Hastelloy ™. Innate anodization of the material surface is sufficient for the mold cavity without the need for a gasket. As mentioned above, the stamper sidewall 14 does not need to be heated, but is preferably capable of being heated to produce a high integrity outside edge of the cast body. It is also envisaged that it may be necessary to change the heat flow through the different parts of the substrate 130 and the side wall 140, where multiple heating and cooling elements may be utilized to allow additional control over the casting of the target 300. Crucible 2⑽ contains high temperature storage tank 210, high temperature valve 220, mouth slot 23 ° and induction coil 25 °. It is also envisaged that any suitable source of melting material may be used to provide material for the stamper 100, but any such source preferably includes A mechanism for controlling the flow rate of the material into the stamper 100, so the flow rate can be controlled to promote the uniform cooling of the target 300. The mouth slot 230 can also have a plurality of openings similar to a shower head above the mold 100 to ensure that the molten metal is quickly and evenly transported into the pressure cavity and solidifies rapidly therein. It is also conceivable that the melting of the melting material can be achieved in several ways, including but not limited to the use of induction coils and electron beams. The target material 300 is formed and contained in the repeated mold 100. As shown in FIG. 1, the material of the target material 300 is solid below the interface 310 and melted above the interface. (6) (6) 200407445 Lian: You can see the composition of the material selected in the dry material 3G () will change depending on the application. U, etc., the special available materials of military and military materials 300 include Ming, 1 Lu alloy and Copper is a way to make higher temperature metal systems such as titanium. This material: two :: agent guide: melt, metal to strengthen the solid dry material formed. Second, long λ will be an advantageous way, but it is conceivable that if the impurity guide two = medium may promote the material during cooling. Bar material properties required =: Impurity growth inhibition of growth impurities, "The formula helps to maintain a small average particle size in the solidification sequence. Shows the solidification direction of the material / target 3 °° through the bar during casting ,,,, and flow are mainly located in the opposite direction of the solidification direction. Although the heat loss occurs through the sides and bottom of the mold in a typical stamper, the heated side wall and the cooled bottom plate of the branch 100 Allows for a more linear heat flow and cooling with a corresponding particle growth direction from bottom to top. If the side walls are not heated, the use of a cooled base plate and insulated side walls also ensures rapid vertical solidification and denseness The leather material. In any case, it can be seen that 'cooling the bottom of the platen to 70%, more preferably 20% of the melting point of the molten material forming the dry material, will be beneficial to the required particle growth. Method of casting system This may include the following steps: Placing high-purity materials under a vacuum or inert gas in a high temperature melting vessel / crucible 200 to prevent the formation of oxides. The metal / material is melted with an induction or electron beam source such as an induction coil 25 °. A stamper 100 is provided. The stamper 100 has a heated side wall 140 and a highly conductive bottom-cooled plate / base 13 and is coated with a highly conductive non-reactive layer on all its inner surfaces. The high temperature material acts as a gasket 12 that does not react with the molten metal. The molten metal is from the melting capacity -10- 200407445

⑺ 器200沉積在壓模腔體no内,在其中從下往上快速地固體 化而有均勻的頂部固體介面性傳播,模鑄材料/靶材3〇〇隨 後從模子釋出並依意願/依需要進行光製。 利用上述方法及裝置製成的靶材將具有小及良好控制的 平均顆粒尺寸而在操作期間提供低的電弧放電。 上述裝置及方法係允許隨著時間經過修改壓模的基底及 側壁溫度以控制固體化及平均顆粒尺寸而有利於小心地控 制鑄造,可獲得的平均顆粒尺寸較佳在關化之後係小於 500微米、更佳在固體化之後小於1〇〇微求、更佳在固體化 之後小於50㈣,本文所用的顆粒尺寸係依照astm標準 E112及/或E1382所決定。 因此’已經揭露用於產生碡造濺餘材之裝置及形成方 法之特定實施例及制,但熟悉此技藝者應瞭解可作出上 述以外的許多其他修改而不脫離本發明的概念,因此,本 發明的主體物並不受到巾請專利範圍的精神以外之限制。 並且在㈣說明書舆中請專利範圍時,所有名稱皆應作合 乎上下文的最廣義解釋,特定言之,應將“包含” 證釋為以非限定性方◎旨稱元件、組件或步驟而 稱的元件、組件或步驟可能提出或利用或合併其他未明^ 指稱的元件、組件或步驟。 ΆΑ簡單說明 從附圖及下文的詳細描述可清楚 括: 地瞭解本發明 其中包 圖1為一坩堝及一切開觀看的壓模之側視圖; 200407445 ⑻ 圖2為圖1的掛禍之俯視圖; 圖3為圖1的壓模之俯視圖。 圖式代表符號說明 10 箭頭 100 壓模 110 壓模腔體 120 壓模襯墊 130 壓模基底 140 壓模側壁 200 坩堝 210 高溫貯槽 220 高溢閥 230 嘴槽 250 感應線圈 300 靶材 310 介面 -12-The mold 200 is deposited in the mold cavity no, where it solidifies rapidly from bottom to top with uniform top solid interface sexual propagation, and the molding material / target material 300 is then released from the mold and as desired / Light as required. Targets made using the methods and devices described above will have a small and well-controlled average particle size while providing low arc discharge during operation. The above device and method allow the temperature of the substrate and the sidewall of the stamper to be modified over time to control the solidification and the average particle size and facilitate the careful control of casting. The average particle size that can be obtained is preferably less than 500 microns after closing It is better to be less than 100 micrometers after solidification, and more preferably less than 50 ㈣ after solidification. The particle size used herein is determined according to astm standard E112 and / or E1382. Therefore, the specific embodiments and methods of the device and forming method for generating the spatter residual material have been disclosed, but those skilled in the art should understand that many other modifications can be made without departing from the concept of the present invention. The subject matter of the invention is not limited beyond the spirit of the patent scope. And when the scope of the patent is requested in the specification, all names should be interpreted in the broadest sense appropriate to the context. In particular, "include" should be interpreted as a non-limiting way. Elements, components or steps may be proposed or utilized or combined with other elements, components or steps not specified ^. ΆΑ simple description can be clearly included from the drawings and the following detailed description: to understand the present invention in which FIG. 1 is a crucible and a side view of a stamper; 200407445 ⑻ FIG. 2 is a plan view of the accident in FIG. 1; FIG. 3 is a top view of the stamper of FIG. 1. Description of Symbols of the Symbols 10 Arrow 100 Die 110 Die Cavity 120 Die Liner 130 Die Base 140 Die Side Wall 200 Crucible 210 High Temperature Storage Tank 220 High Overflow Valve 230 Nozzle Slot 250 Induction Coil 300 Target 310 Interface-12 -

Claims (1)

拾、申請專利範圍 h :種模鑄濺鍍靶材,其由具有固體化之後小於500微米 平均顆粒尺寸之_液體金屬的鑄造物所形成。 _申明專圍第!項之藏鑛革巴材,其中該革巴材具有固 體化之後小於5〇微米的平均顆粒尺寸。 申明專利範圍第1項之濺鍍靶材,其包含Al、Cu、Ti 或Zr其中一或多者。 4· 5. 種層體其由根據申請專利範圍第i項之革巴材所形成。 :種微機電元件,其包含根㈣請專利範圍第 體。 曰 6·—種用於#造一濺鑛㈣之方法,包含: 提供一壓模及一高溫融化容器; 將一高純度鑄造材料放置在該融化容器中; 融化該鑄造材料; ’ …从何每河行褥移至該壓模的一腔體内· 將熱量同時傳入與傳出該鑄造材::同時 材料固體化成為該壓模中的一靶材; ^ f ^ 將該靶材從該壓模釋出。 7. 如申請專利範圍第6項之方法,其 下經由-感應或電子束源融化該材料。…’隋性氣體 如申請專利範圍第6項之方法,其中該厂堅模旦有 材::底適於在該鑄造材料固體化時將熱量傳出該= 其中該壓模具有至少 9.如申請專利範圍第8項之方法 200407445Scope of application and patent application h: A die casting sputtering target formed of a cast metal with a liquid particle size of less than 500 microns and an average particle size after solidification. _Declaration No. 1! Xiangzang mineral leather bar material, wherein the leather bar material has an average particle size of less than 50 microns after solidification. The sputter target of claim 1 includes one or more of Al, Cu, Ti or Zr. 4.5. 5. The seed layer is formed of leather material according to item i of the patent application. : A kind of micro-electro-mechanical component, which contains the scope of patent application. Said 6 · —a method for making a splash of ore, including: providing a stamper and a high temperature melting container; placing a high purity casting material in the melting container; melting the casting material; '... from Each row of mattresses was moved into a cavity of the stamper. The heat was transferred into and out of the casting material at the same time :: At the same time, the material was solidified into a target in the stamper; ^ f ^ The stamper is released. 7. If the method according to item 6 of the patent application is applied, the material is melted by-induction or electron beam source. … 'Inert gas, such as the method in the scope of patent application No. 6, wherein the plant has a solid material :: the bottom is suitable to transfer heat when the casting material is solidified = = wherein the stamper has at least 9. Method of Patent Application No. 8 200407445 ίο. 11. 12. 13. 14. 15. 16. 加熱的側壁,該側壁適於在該鑄造材料固體化時將熱量 傳入該鑄造材料中。 μ 一種濺鍍靶材鑄造壓模,包含: 一腔體,其適於接收定量的鑄造材料; 一基底’其適於將熱能傳出該腔體中所含的任何材料 外; 至少一側壁,其適於將熱能傳入該腔體中所含的任何 材料内。 如申明專利範圍第1 〇項之壓模,其中該腔體係襯有一具 有高熱傳導係數之大致不可反應性材料。 如申請專利範圍第10項之壓模,其中該基底具有大於或 等於鋁之熱傳導率。 如申凊專利範圍第1 〇項之壓模,其中該至少一側壁適於 以小於該基底熱傳導率的10%之熱傳導率來將熱能傳入 或傳出該腔體中所含的任何材料。 如申請專利範圍第10項之壓模,其中該基底係適於維 持在等於或小於任何融化的鑄造材料融點的70%之溫 度。 如申請專利範圍第14項之壓模,其中該基底係適於維 持在等於或小於任何融化的鑄造材料融點的2 〇 %之溫 度。 一種鑄造系統,包含: 定量的鑄造材料; 一高溫融化容器,其適於容納該鑄造材料及允許該鑄 20040744511. 12. 13. 14. 14. 16. 16. A heated sidewall adapted to transfer heat into the casting material as the casting material solidifies. μ a sputtering target casting die comprising: a cavity adapted to receive a certain amount of casting material; a substrate 'which is adapted to transfer thermal energy out of any material contained in the cavity; at least one side wall, It is suitable for transferring thermal energy into any material contained in the cavity. For example, the stamper of item 10 of the patent scope is declared, wherein the cavity system is lined with a substantially non-reactive material having a high thermal conductivity coefficient. For example, the stamper of the scope of application for patent No. 10, wherein the substrate has a thermal conductivity greater than or equal to aluminum. For example, the stamper of claim 10 in the patent scope, wherein the at least one side wall is adapted to transfer thermal energy into or out of any material contained in the cavity with a thermal conductivity less than 10% of the thermal conductivity of the substrate. For example, the stamper of the scope of application for patent No. 10, wherein the substrate is suitable for maintaining a temperature equal to or less than 70% of the melting point of any molten casting material. For example, the stamper of the scope of application for patent No. 14 wherein the substrate is suitable for maintaining a temperature equal to or less than 20% of the melting point of any molten casting material. A casting system comprising: a quantitative amount of a casting material; a high-temperature melting container adapted to contain the casting material and allow the casting to be made 200407445 造材料以一受控制速率流出該容器外; 一壓模,其適於接收流出該高溫融化容器外的鑄造材 料,該壓模係具有適於將熱能傳入該壓模中所含的任何 鑄造材料内之至少一側壁以及適於將熱能傳出該壓模 中所含的任何鑄造材料外之一基底。 、 17. 如申請專利範圍第16項之系統,其中該壓模包含一腔體 ,該腔體係襯有對於該鑄造材料大致不起反應之一具有 雨熱傳導性及高溫的材料。 18. 如申明專利Iil圍第17項之系、統,其中該高溫融化容器係 包含一用於將熱能傳入該容器中所含的任何鑄造材料 内之感應或電子束來源、以及—適於控制該容器與該壓 模之間的任何材料流動之高溫閥。The molding material flows out of the container at a controlled rate; a stamper adapted to receive the casting material flowing out of the high temperature melting container, the stamper having any casting suitable for transferring heat energy into the stamper; At least one side wall within the material and a substrate adapted to transfer thermal energy out of any casting material contained in the stamper. 17. The system according to item 16 of the scope of patent application, wherein the stamper includes a cavity, and the cavity system is lined with a material having rain heat conductivity and high temperature, one of which is substantially non-reactive to the casting material. 18. As stated in the system and system of item 17 of the patent Iil, wherein the high temperature melting container comprises an induction or electron beam source for introducing thermal energy into any casting material contained in the container, and-suitable for A high temperature valve that controls the flow of any material between the container and the stamper.
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