TW200405413A - Ozone processing apparatus - Google Patents
Ozone processing apparatus Download PDFInfo
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- TW200405413A TW200405413A TW92120790A TW92120790A TW200405413A TW 200405413 A TW200405413 A TW 200405413A TW 92120790 A TW92120790 A TW 92120790A TW 92120790 A TW92120790 A TW 92120790A TW 200405413 A TW200405413 A TW 200405413A
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- Taiwan
- Prior art keywords
- substrate
- support
- gas supply
- processing gas
- supply head
- Prior art date
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- 238000012545 processing Methods 0.000 title claims abstract description 122
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 239000000758 substrate Substances 0.000 claims abstract description 181
- 230000007246 mechanism Effects 0.000 claims abstract description 154
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 239000000725 suspension Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 19
- 238000006073 displacement reaction Methods 0.000 claims description 8
- 239000008267 milk Substances 0.000 claims description 7
- 210000004080 milk Anatomy 0.000 claims description 7
- 235000013336 milk Nutrition 0.000 claims description 7
- 238000005096 rolling process Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 230000002496 gastric effect Effects 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000005111 flow chemistry technique Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 119
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 14
- 229910052760 oxygen Inorganic materials 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- 238000004891 communication Methods 0.000 description 8
- 239000000523 sample Substances 0.000 description 7
- 125000006850 spacer group Chemical group 0.000 description 6
- 239000002826 coolant Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000110 cooling liquid Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 241001674048 Phthiraptera Species 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 210000000481 breast Anatomy 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
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- 239000012535 impurity Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- 206010011469 Crying Diseases 0.000 description 1
- 241001523681 Dendrobium Species 0.000 description 1
- 241000237858 Gastropoda Species 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 235000005206 Hibiscus Nutrition 0.000 description 1
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- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 241000219000 Populus Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
200405413 玖、發明說明： 【發明所屬之技術領域】 本發明係關於-種臭氧處理裝置，其對半導體基板或 液晶基板等基板表面噴至少含有臭氧的處理氣體，藉以在 基板表面上形成氧化膜、或將基板表面上所形成的氧化膜 予以改質、或將基板表面上所形成的光阻膜予以去除。 【先前技術】 已知一種習知臭氧處理裝置200,係如第15圖所示， 二有〃既疋内今積且上部有開口的處理冑如；將處理 室201之上部開口部封閉的蓋體202 ;配設於處理室2〇1 内’上面載置基板κ的載置台203;支撐載置台2〇3底面 並使其升降的升降機構2G4;及配置於載置台2G3上方的 處理氣體供應頭205等；且虛採宕9rn而 / 且處理至201内的氣體，適當地 攸排出口（未圖示）排出至外部。 在載置台203内妒古— K 破有加熱裔（未圖示），所載置的基板 K將被此加埶哭（去同— 頭20…： 熱。此外’上述處理氣體供應 員2 0 5係具有··固設於 及配設於頭本體206二： 的塊狀頭本體206; 下面的複數個喷嘴207。頭本體206 糸有如圖不般直接固 當地透過安裝構件而g^二體〇2下面的情況，也有適 再仟而固疋於蓋體202的情況。 在頭本體206形成有供靡丨— -Λ g|I .... 頁仏應孔（未圖不），該供應孔（未圖 氣體產生裝置(未圖示)。各噴… 才成，上側開口部（未圖示）連接於該供應孔 200405413 (未圖示），而下側之開口部（未圖示）則與基板κ表面對向 。此外，在各噴嘴207下端部分別固設有與基板κ對向的 凸緣狀對向板208，各對向板208則於同一平面内配設成 與鄰接之對向板2 0 8之間形成既定間隙2 〇 9。 依據如此般構成之臭氧處理裝置2〇〇，若將基板κ適 當載置於載置台203上，其將被加熱器（未圖示）加熱至既 定溫度，而且載置台203利用升降機構2〇4而上升，使基 板Κ與對向板2 0 8之間的間隔g成為既定間隔。然後，由 臭氧氣體產生裝置（未圖示）所產生之既定濃度的臭氧氣體 (處理氣體），透過供應孔（未圖示）供應給噴嘴2〇7，再從 其下側的開口部（未圖示）向基板K表面噴出。 、噴出的臭氧氣體在撞擊基板K之後，便形成沿基板κ 流動的臭氧氣體層’在此種流體之中，臭氧(〇3)將被基板 Κ加熱，藉由此種加熱、接觸基板κ或光阻，分解成氧 (〇2)與活性氧（〇*)，再利用此活性氧（〇*)’於基板κ表面 形成氧化膜或將基板Κ表面所形成的氧化膜予以改質，或 將基板Κ表面所形成的光阻膜以其與活性氧（〇*)間的熱化 學反應來除去。 # 【發明内容】 欲解決之拮输 所以，上述間隔g乃控制著沿基板κ表面流動的臭氧 氣體流動層厚度，利用將此間隔g變狹窄，便可將臭氧氣 體流動層厚度變薄，並可加速臭氧氣體流動的流速。因而 200405413 藉由將臭氧氣體流動層厚度變薄，冑可增加對上述氧化膜 之形成或其改質、或者光阻膜之去除具作用的臭氧比率， 可提局其反應速率。此外，藉由加速臭氧氣體流動的流速 ，便可擴大基板K表面的處理範圍。 、 本案發明者等便根據相關見解深入鑽研的結果， 2將間隔^定為約時’可均句、有㈣地 貫施臭氧處理。應可輕易理解，此間隔g的範 窄。所以，為了均勻、有效率妯斟其杧r主 马狹 J有效羊地對基板κ表面進行處理， 必須極嚴格地管理該間隔g。 然而’上述習知的臭氧處理裝置㈣為僅支 203底面中央部的搂、皮 门 X置口 、、構w，因此載置台203將因本身的重量 而撓曲，使間隔g在載置a 里 戰置° 203的中央部附近與端部附近200405413 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to an ozone treatment device that sprays a processing gas containing at least ozone on a substrate surface such as a semiconductor substrate or a liquid crystal substrate, thereby forming an oxide film on the substrate surface, The oxide film formed on the substrate surface is modified, or the photoresist film formed on the substrate surface is removed. [Prior art] A conventional ozone treatment device 200 is known. As shown in FIG. 15, there are two types of treatment, such as an internal volume and an opening at the top; a cover that closes the upper opening of the processing chamber 201 Body 202; a mounting table 203 on which the substrate κ is placed in the processing chamber 201; a lifting mechanism 2G4 that supports the bottom surface of the mounting table 20 and raises and lowers it; and a processing gas supply disposed above the mounting table 2G3 The first is 205, etc .; and the gas is collected at a rate of 9 rn and / or is processed to 201, and the gas is discharged to the outside through a discharge port (not shown) as appropriate. In the mounting table 203, there is a heating source (not shown), and the mounted substrate K will be crying (go to the same-head 20 ...: hot. In addition, the above processing gas supplier 2 0 The 5 series has a block head body 206 that is fixed and arranged on the head body 206; a plurality of nozzles 207 below. The head body 206 is not directly fixed through the mounting member as shown in the figure. 〇2 In the following cases, there are cases where it is suitable to be fixed to the cover 202. A head hole 206 is formed in the head body 206 (not shown). A supply hole (not shown in the gas generating device (not shown). Each spray is made. The upper opening (not shown) is connected to the supply hole 200405413 (not shown), and the lower opening (not shown) ) Is opposite to the surface of the substrate κ. In addition, flange-shaped facing plates 208 opposite to the substrate κ are fixed to the lower end of each nozzle 207, and each of the facing plates 208 is arranged adjacent to each other in the same plane. A predetermined gap 2 009 is formed between the opposed plates 208. According to the ozone treatment device 200 configured as described above, if the substrate κ is appropriately It is placed on the mounting table 203, which is heated to a predetermined temperature by a heater (not shown), and the mounting table 203 is raised by a lifting mechanism 204, so that the interval g between the substrate K and the opposing plate 208 It becomes a predetermined interval. Then, a predetermined concentration of ozone gas (processing gas) generated by an ozone gas generating device (not shown) is supplied to the nozzle 207 through a supply hole (not shown), and then from the lower side The opening (not shown) is ejected toward the surface of the substrate K. After the ejected ozone gas hits the substrate K, an ozone gas layer flowing along the substrate κ is formed. 'In this kind of fluid, ozone (〇3) will be removed by the substrate K heating, through this heating, contact the substrate κ or photoresist, and decompose into oxygen (〇2) and active oxygen (〇 *), and then use this active oxygen (〇 *) 'to form an oxide film on the surface of the substrate κ or The oxide film formed on the surface of the substrate K is modified, or the photoresist film formed on the surface of the substrate K is removed by a thermochemical reaction between the photoresist film and the active oxygen (0 *). Therefore, the above-mentioned interval g controls the flow along the substrate κ surface. The thickness of the moving ozone gas flow layer can be narrowed by using this interval g to reduce the thickness of the ozone gas flow layer and accelerate the flow rate of the ozone gas flow. Therefore, by making the thickness of the ozone gas flow layer thinner, It can increase the ozone ratio that has an effect on the formation or modification of the above-mentioned oxide film, or the removal of the photoresist film, and can improve the reaction rate. In addition, by accelerating the flow rate of the ozone gas, the surface of the substrate K can be enlarged. The scope of the treatment. The inventors of the present case studied the results of in-depth research based on the relevant insights. 2 The interval ^ is set to the approximate time, and the ozone treatment can be applied uniformly. It should be easily understood that the range of this interval g is narrow. Therefore, in order to efficiently and uniformly treat the surface of the substrate κ, the interval g must be managed extremely strictly. However, the above-mentioned conventional ozone treatment device 支 only supports the central part of the bottom surface of 203, the leather door X opening, and the structure w. Therefore, the mounting table 203 will flex due to its own weight, so that the interval g will be placed on the a Near the central part and near the end part of 203 °
Him無法在整個區域使基板 間的間隔g落在的n 9 7 一对门板208 兮率妯斛|4 、力^2·〜1·0咖，結果無法達成均勻且有 身 /板κ表面進行處理之原始目的。尤其 亦變大’而造成問題發生。 的撓曲置 再者’在臭乳處理時，因為载置台203被加熱而卜 隸態，在常溫下即便其载置面的平面度加工至;精/ 溫下仍因熱變形而使該平面度惡化 ：； 度的惡化，亦使間隔运無法落在上述範圍内。 面 再者’在上述習知臭氧處理裝置2 端部固接於處理室2〇1而脾甘^ 僅盍體202 氣體供應頭2〇5^= 封閉’因此蓋體202與處理 ^ 3 zut)的重量將俊荖 便盍體202之中心部撓曲，導致 200405413 固設於其上的處理氣體供應頭205亦隨蓋體2〇2的繞 變形’造成基板K與對向板208間的間隔g，在處理氣體 供應頭205中央附近與端部附近處有大差異。 _ 口此如上述般，不僅無法在整個區域使基板K盥 板208間的間隔g落在约〇 ” 、向 ㈣g洛在約0·2_〜1·〇_，而無法達成均 、有效率地對基板κ表面進行處理之原始目的，而且隨基 板Κ的大型化，處理室2〇1、蓋體2〇2、處理氣體供應^ 205寺亦趨於大型化，因此容易發生上述變形的問題。 β本發明，係有鑑於上述情形而做的發明，其目的在於 j仏種可在基板與對向板對向的整個區域中將其間隔設 疋成均等的臭氧處理裝置。 術手段及：a：効纷 本發明的臭氧處理裝置係具備有：呈水平配置、平坦 的上面供載置基板的載置台；支撐載置台底面的支撐裝置 ，對載置於載置台的基板進行加熱的加熱機構；配設成與 載置於載置台的基板對向、且與基板表面間的間隔為預設 間隔的對向板；及對載置於載置台的基板供應含有臭氧的 軋體，使處理氣體流通於基板與對向板之間的氣體供 應機構；其特徵在於·· 該支撐裝置，係具有： 第1支撐機構，係支撐載置台之底面中央部； 複數個第2支撐機構，係以預設間隔支撐載置台之底 Φ ;及 基台’係配設於載置台下方，以分別載置、固定第1 200405413 支撐機構與各第2支撐機構；且 第1支撐機構及/或各第2支撐機構，具有調整機構部 ’以調整用於支撐載置台底面之上下方向之支撐位置。 依據本發明，載置台上面所載置的基板被加熱機構加 並對載置0上所載置的基板供應含有臭氧的處理氣體 所供應的處理氣體將在撞擊基板之後，流通於以既定 間隔對向的基板與對向板之間，在此流體之中，臭氧 因基板而被加熱，利用如此般的加熱、或利用與基板或光鲁 阻*的接觸而分解為氧(〇2)與活性氧(〇。，藉由此活性氧 ⑽’在基板表面上形成氧化膜’或者使基板表面上的氧 膜改貝或在基板表面上所形成的光阻膜因 生熱化學反應而去除。 乳座 板表面〜動之處理氣體流之層 g乐中叫m， 稽由將目亥間隔設定於 无疋間隔（如〇.2mm〜i.0mm)，便 氧處理。 使了均勻且有效率地進行臭 但是，僅支撐載置A麻 真氧處理奘w " 央邛而之構成的上述習知 ^ 執置口 203因本身的重量而 ，热法在整個區域使基板盥 因此 内，而無法達成均勾且有效率…，洛在既-範圍 。此外，载置么因Λ 处基板表面之原始目的 戰置口因χ熱而處 四 载置面的平面度加 …皿狀怨，即便在常溫下對 双呵積度，作县a古 而致平面度惡化，由於平 ；在…仍因熱變形 又、〜、匕，亦導致上述間隔無 10 200405413 法落於上述範圍内。 因此，本發明的臭氧處理裝置，係以後述之支撐裝置 來支撐載置台之底面，該支撐裝置，係具有1 1支撐機 構’係支撐載置台之底面中央部；複數個帛2支撐機構， =、預η又間隔支撐載置台之底面；及基台，係配設於載置 口下方卩刀別載置、固定第i支撐機構與各第2支撐機 構；且第1支撐機構及/或各帛2支撐機構，係具有調整 機構部’以調整用於支擇載置台底面之上下方向之支撐位 置。 依據該支撐《置，利用帛1支撑機構及/或帛2支撐機 構之調整機構部，來調整用於支撐載置台底面的上下方向 支撐位置，俾可適當地調整第1支撐機構之支撐位置、與 各第2支撐機構之支撐位置間的相對的支撐位置關係。 所以’例如即便載置台因本身重量而撓曲，且因受熱 而熱變形，但是利用適當調整上述相對的支撐位置關係， 便可L正相關的撓曲量或熱變形量，使載置台上面的平面 又成為所希望之精度，在基板與對向板對向的全部區域中 ，可使其間隔均等。所以，便可利用相關作用，均勻且有 效率地對基板表面進行臭氧處理。 再者’上述載置台係被基板加熱用加熱機構加熱，因 此在載置台透過第2支撐機構而固定並限制於基台的情況 下’熱膨服使載置台變形，該變形使載置台上面的平面度 心化 了此致基板與對向板間的間隔無法落於所希望之範 圍0 200405413 因此，若該支撐载置台的各 台之水平方向位移，載置=機構可容許载置 向熱膨脹，俾可防止變形。 又了拘束地在水平方 再者，該各第2支擋艢 平板狀A邻、；^又 可具有··支撐構件，係由 十板狀基A豎設於基部上 形成有螺紋；螺帽，係螺合於支H4成，並在轴部 係具有供支撐構件之相部嵌插2件之轴部；支樓板， 在軸部嵌插於貫通孔At 、貝通孔，且支撐板之底面 用來將去= 態下由螺帽支擇，·固定構件，係 =板固定於载置台之底面；及保持構件，係固設 =二二以將支擇構件之基部保持成，容許該基部在 欠千方向移動，而限制該基部在上下方向移動。 ;且=口右在5亥載置台形成上面有開口的複數個吸氣孔 、°又吸引機構，以將吸氣孔内的氣體吸引、排氣，使 2於載置台上的基板吸附於吸氣孔開口部’則例如即便 二 造成表面平面度惡化的情況下，仍可藉由將基板 =附於載置台上面而使其仿照載置台上面，使該基板表面 的平面度成為適當的程度。此外，吸引機構係由真空泵等 所構成。 • 2者’纟發明係一種臭氧處理裝4，其特徵在於具有 •上部有開口之處理室；蓋體，係設置成將處理室之上部 開口部封閉；冑置台，係配設於處理室内，上面供載置基 板’加熱機構’係用來對載置於載置台上的基板進行加熱 ;處理氣體供應頭，係配設於載置台上方，並具有：頭本 版，對向板，其在頭本體下方固設成與載置於載置台上之 200405413 基板對向；及噴嘴，其在對向板之基板對向面有開口，以 將3有臭乳的處理氣體對基板喷出；氣體供應機構，係 來對處理氣體供應頭供應處理氣體，並使其從喷嘴之門口 部噴出；及複數個懸吊機構，係卡合於蓋體，以將處㈣ 體仏應碩以仗蓋體朝下懸吊之狀態支撐，且將處理氣體供 應頭支擇成可向上移動。 '一 再者，該懸吊機構的更具體構造，例如係一 體，該端部所形成的卡合部抵接於蓋體上面，另—端 接於處理氧體供應頭的支樓轴；且支撐轴，係在卡合部抵 ^於蓋體上面的狀態下，利用蓋體，向下的移動受：制並 支撐成懸吊狀態，但可向上移動自如。 、 、依據該懸吊機構，處理氣體供應頭於蓋體卡止、支撐 ' σ向上私動’因此即便蓋體變形而使複數個 ，應部分沿上下方向產生位移，在各懸吊機二下 。相對位置關係上’處理氣體供應頭仍相對於向下產生 位移的懸吊機構向上 體供應頭不產位移量，因此在處理氣 “ “主、、 广對向板於蓋體變形後仍維持水平狀 s月況下’在基板與對向板對向的全部區域中，可使其 。曰隔均等’俾可均勾且有效率地對基板表面進行臭氧處理 相對：二隨蓋體變形狀態之不同，僅將處理氣體供應頭 板維拉 構ί上移動，有時無法將蓋體變形後的對向 、支广。此時’在懸吊機構設置供調整受 支撐的處理氣體供應頭之上下方“置用的位置調節機Him couldn't make the gap g between the substrates n 9 7 a pair of door plates 208 in the whole area. Xi rate Dendrobium | 4, force ^ 2 · ~ 1 · 0 coffee, as a result, it was impossible to achieve a uniform and body / plate κ surface. The original purpose of processing. In particular, it also becomes larger 'and causes problems. The deflection of the deflection is also caused by the heating of the mounting table 203 during the treatment of stinky milk. Even at the normal temperature, the flatness of the mounting surface is processed to; the surface is still deformed due to thermal deformation at the precise temperature. Deterioration of the degree: The deterioration of the degree also makes the interval transportation unable to fall within the above range. In addition, the end of the conventional ozone treatment device 2 is fixed to the processing chamber 2101, and the spleen is ^ only the carcass 202, the gas supply head 2 05 ^ = closed, so the cover 202 and the treatment ^ 3 zut) The weight of the deflection of the central part of the Junkie body 202 caused the processing gas supply head 205 fixed on 200405413 to also deform with the winding of the cover body 2 ', causing the gap between the substrate K and the opposite plate 208 g, there is a large difference near the center of the process gas supply head 205 and near the end. _ As mentioned above, not only cannot the interval g between the substrate K and the washboard 208 fall to about 0 "and Xiang Luog Luo at about 0 · 2_ ~ 1 · 〇_ in the entire area, and it is not possible to achieve uniform and efficient The original purpose of processing the surface of the substrate κ, and with the increase in the size of the substrate K, the processing chamber 201, the cover 202, and the supply of processing gas 205 also tend to become larger, so the above-mentioned deformation problem is prone to occur. β The present invention is an invention made in view of the above-mentioned circumstances, and the object of the present invention is to provide an ozone treatment device with a uniform interval between the substrate and the opposing plate. : Effect of the ozone treatment device of the present invention is provided with: a horizontally disposed, flat and flat upper surface on which the substrate is placed; a supporting device for supporting the bottom surface of the placement table, and a heating mechanism for heating the substrate placed on the placement table; An opposing plate arranged to be opposed to the substrate placed on the mounting table and having a predetermined interval from the substrate surface; and supplying a rolled body containing ozone to the substrate placed on the mounting table to circulate the processing gas On the substrate and the The gas supply mechanism between the plates is characterized in that the supporting device includes: a first supporting mechanism that supports the central portion of the bottom surface of the mounting table; a plurality of second supporting mechanisms that support the mounting table at predetermined intervals The bottom Φ; and the abutment 'are arranged below the mounting table to place and fix the first 200405413 support mechanism and each second support mechanism; and the first support mechanism and / or each second support mechanism have an adjustment mechanism According to the present invention, the substrate placed on the placing table is heated by the heating mechanism and the substrate placed on the placing table is supplied with a processing gas containing ozone. The supplied processing gas will flow between the substrate opposing the substrate at a predetermined interval after it hits the substrate. In this fluid, ozone is heated by the substrate, and such heating or the substrate is used. Or photoresistance *, it is decomposed into oxygen (〇2) and active oxygen (〇.), By which the active oxygen ⑽ 'forms an oxide film on the substrate surface' or changes the oxygen film on the substrate surface or The photoresist film formed on the surface of the substrate is removed due to the thermochemical reaction. The layer on the surface of the breast plate ~ the moving gas flow layer g is called m, and the interval between the meshes is set to the non-interval interval (such as 〇. 2mm ~ i.0mm), the oxygen treatment. It makes the smell uniform and efficient. However, it only supports the above-mentioned conventional structure formed by the A-aerobic treatment 奘 w " Due to its own weight, the thermal method can make the substrate clean inside the entire area, and it is impossible to achieve uniformity and efficiency ..., it is in the range of the previous one. In addition, the original purpose of placing the substrate on the substrate surface is χ. The flatness of the four mounting surfaces is increased by the heat. The flatness is worse, even at normal temperature, the flatness is deteriorated due to the ancient times. Because of the flatness; It also caused the above interval to fall within the above range. Therefore, the ozone treatment device of the present invention is a support device described later to support the bottom surface of the mounting table. The support device has a 1 support mechanism, which is a central portion of the bottom surface of the support mounting table; a plurality of 帛 2 support mechanisms, = The bottom surface of the mounting platform is supported in advance and spaced apart; and the abutment is arranged under the mounting port to place and fix the i-th support mechanism and each second support mechanism; and the first support mechanism and / or each帛 2 The supporting mechanism is provided with an adjusting mechanism portion to adjust the supporting position for supporting the upper and lower directions of the bottom surface of the mounting table. According to the supporting structure, the support mechanism of 帛 1 support mechanism and / or 帛 2 support mechanism is used to adjust the vertical support position for supporting the bottom surface of the mounting table, and the support position of the first support mechanism can be adjusted appropriately. Relative support position relationship with the support position of each second support mechanism. Therefore, for example, even if the mounting table is deflected due to its own weight and thermally deformed due to heat, by properly adjusting the above-mentioned relative support position relationship, the positively related amount of deflection or thermal deformation can be used to make the The plane becomes the desired accuracy again, and the interval between the substrate and the opposing plate can be made uniform. Therefore, the relevant effects can be used to uniformly and efficiently perform the ozone treatment on the substrate surface. Furthermore, 'the mounting table is heated by the substrate heating heating mechanism, so when the mounting table is fixed and restricted to the base by the second support mechanism, the thermal expansion coating deforms the mounting table, and this deformation causes the upper surface of the mounting table to deform. The flatness centralizes the space between the substrate and the opposing plate. The distance between the substrate and the opposing plate cannot fall within the desired range. 200405413 Therefore, if the horizontal displacement of each stage of the supporting stage, the placement = mechanism can allow the placement to thermally expand. Prevents deformation. It is restrained horizontally, and each of the second support slabs is adjacent to the flat plate A; ^ may also have a supporting member, which is formed by a ten-plate-shaped base A erected on the base to form a thread; a nut It is screwed into the support H4, and the shaft is provided with a shaft portion for inserting two phases of the supporting member in the shaft portion; the support floor plate is inserted into the through hole At and the through hole in the shaft portion, and the support plate is The bottom surface is used to select by the nut in the un-fixed state. · Fixed component, system = plate is fixed to the bottom surface of the mounting table; and the retention component, fixed = two or two to hold the base of the support component to allow the The base moves in the direction of less than one thousand, and the base is restricted from moving in the up and down direction. ; == At the right of the mouth, a plurality of suction holes and a suction mechanism with openings are formed on the mounting table to attract and exhaust the gas in the suction holes, so that the substrate on the mounting table is attracted to the suction. For example, even if the flatness of the surface is deteriorated due to the second air hole opening, the flatness of the surface of the substrate can be made appropriate by attaching the substrate = to the upper surface of the mounting table so as to imitate the upper surface of the mounting table. The suction mechanism is constituted by a vacuum pump or the like. • The 2's invention is an ozone treatment device 4, which is characterized by having a processing chamber with an opening at the upper part; a cover body which is arranged to close the opening at the upper part of the processing chamber; a mounting table is arranged in the processing chamber, The substrate heating device for heating the substrate is used to heat the substrate placed on the mounting table; the processing gas supply head is arranged above the mounting table and has: a head plate, an opposite plate, which The lower part of the head body is fixed to face the 200405413 substrate placed on the mounting table; and the nozzle has an opening on the opposite surface of the substrate of the opposite plate to eject 3 stinky milk processing gas to the substrate; gas The supply mechanism is for supplying the processing gas to the processing gas supply head and ejecting it from the mouth of the nozzle; and a plurality of suspension mechanisms are engaged with the cover body so as to hold the processing body against the cover body. It is supported in a downwardly suspended state, and the processing gas supply head is selected to be movable upward. 'Furthermore, the more specific structure of the suspension mechanism is, for example, integrated, the engaging portion formed by the end portion abuts on the cover body, and the other end is connected to the shaft of the tower that handles the oxygen supply head; and supports The shaft is in a state where the engaging portion abuts on the cover body, and the downward movement of the cover body is controlled and supported by the cover body in a suspended state, but it can move upward freely. According to the suspension mechanism, the processing gas supply head is locked on the cover body and supports 'σ upward private movement'. Therefore, even if the cover body is deformed to make a plurality, it should be partially displaced in the up and down direction, and two under each suspension machine . In the relative positional relationship, the processing gas supply head still does not produce displacement to the upper body supply head relative to the suspension mechanism that generates a downward displacement. Therefore, the processing gas "" main, wide and opposite plates will maintain the level after the cover is deformed. In this state, it can be made in the entire area where the substrate and the opposing plate face each other. "Equally separated" 且 can evenly and efficiently perform ozone treatment on the surface of the substrate. Relative: 2 Depending on the deformation state of the cover, only the processing gas supply head plate vera structure is moved and sometimes the cover cannot be deformed. Later confrontation and support. At this time, a position adjuster is provided on the suspension mechanism for adjusting the supporting process gas supply head above and below.
13 200405413 構便可。 再者，該具有位置調節機構 ，例如係具有：支撐軸 "之更具體構造 貫通蓋f ，、至v 一端部具有螺紋，該一端 貝通盍體，且另_端固接 而 螺合於支撐軸$兮, 虱體供應頭；及螺帽，係 螺帽抵接;^μ & 係在螺合於另一端的 制並支严成辟兄u At 杓用盍體’向下移動受限 支撐成懸吊狀態，但可向上移動自如。 依據該懸吊機構，調節螺合 便可調整蓋體與處理氣體…=螺帽之位置’ ，適〜的相對位置關係。所以 對周即各懸吊機構螺帽之位置，便可將蓋體變形後的 對向板之狀態調節為水平狀 曼々 整個區μ由广在基板與對向板對向的 品或中，使其間隔調節為均等。 率地對基板表面進行臭氧處理。 a 句句且有效 =’具有同上述功能的臭氧處理裝置，例如 广有開口之處理室；蓋體，係設置成將 :口部封閉；載置台，係配設於處理室内，上面供載= 反广熱機構’係用來對載置於載置台上的基板進行力二 ’處理氣體供應頭，係配設於載置台上方，並二 -，對向板，其在頭本體下面固設成與載置於載置台上之 基板對向’及喷嘴，係在對向板之基板對向面有開口，以 :含有臭氧的處理氣體對基板噴出；氣體供應機構，係用 來對處理氣體供應頭供應處理氣體，並使其從噴嘴之開口 部喷出；及複數個懸吊機構，係卡合於蓋體與處理氣：供 應頭，以將處理氣體供應頭以從蓋體朝下懸吊之狀態支撐 14 200405413 置 且可調節受懸吊、支撐之處理氣體供應頭之上下方向位 再者，在此情況下，該懸吊機構亦可於蓋體卡裝成可 容許處理氣體供應頭之水平方向位移。 再者，本叙明的臭氧處理裝置，其特徵在於具有：上 部有開口之處理室；蓋體，係設置成將處理室之上部開口 部封閉；基板支撐機構部，係配設於處理室内，且具有供 載置基板之載置面；升降機構，係用來支擇並升降基板^ 樓機構部’·加熱機構，係對載置於基板支撐機構部載置面 上的基板進行加熱；處理氣體供應頭，係配設於基板支撐 機構部之載置面上方，並具有：頭本體；對向板，其在頭 本體下方固設成與載置於基板支撐機構 對向；及喷嘴，係在對向板之基板對向面有開口 有臭氧的處理氣體對基板噴出；氣體供應機構，係對處理 亂體供應頭供應處理氣體’並使其從喷嘴之開口部噴出； 及複數個懸吊機構，係卡合於蓋體，u α w γ 、 以⑤盍體，以將處理氣體供應頭 =盖體朝下懸吊之狀態支撐，且將處理氣體供應頭支撐 2 =移動；且基板支撐機構部具有暨設於载置面區域 複妻個抵接構件，基板支擇機構部藉升降機構而上升 後，各抵接構件之上自即抵接於處理氣體頭。 該^機構的更具體構造’例如係由支撐轴構成，支 :1V:端貫穿蓋體，該端部所形成的卡合部抵接於蓋 二 =-端則固接於處理氣體供應頭；支擇轴，係在 卡“抵接於蓋體上面的狀態下’利用蓋體，向下的移動 15 200405413 叉限制並支撐成懸吊狀態，但可向上移動自如。 依據該懸吊機構，處理氣體供應頭於蓋體卡止、支擇 成可向上移動，因此基板支撐機構部的上升，其各抵接構 · 件抵接於處理氣體供應頭，藉此便將處理氣體供應頭往上 舉起，使處理氣體供應頭呈載置於基板支撐機構部之抵接. 構件上的狀態。藉此，便可使載置於基板支撐機構部之載 置面上的基板、與處理氣體供應頭之對向板間的間隔，在 對向的整個區域中均等，俾可均勻且有效率地對基板表面 進仃臭氧處理。如此便可不拘蓋體的變形，使基板與對向 _ 板間的間隔均等。 二再者，該懸吊機構亦可具有位置調節機構，以調節受 β吊、支樓的處理氣體供應頭之上下方向位置，具備該位 置調節機構的懸吊機構之更具體構造，例如係具有：支撐 軸’係至少-端部具有螺紋’該-端貫穿蓋體，且另一端 :接於處理氣體供應頭；及螺帽，係螺合於支撐軸之該一 且支撐軸，係在螺合於其一端的螺帽抵接於蓋體上面 :狀態下，利用蓋體’向下之移動受限制並支撐成懸吊狀籲 恶’但可向上移動自如。 再者，本發明亦可藉由彈壓機構將被懸吊機構懸吊、 切的處理氣體供應頭向下彈壓。處理氣體供應頭，係藉 ;田吊機構而於蓋體卡止成可向上移動，因&，若由於某種 撐機構供應㈣㈣向切動完的狀態，基板支 理、彳後，—部分或全部的抵接構件呈無法抵接於處 乳體供應頭之狀態，處理氣體供應頭便無法載置於抵接 16 200405413 構件上，而使基板與對向板間的間隔不均等，不過，如上 述，若利用彈壓機構將處理氣體供應頭向下彈壓，處理氣 體供應頭與抵接構件便可確實抵接，而使基板與對向板之 間的間隔確實均等。 再者，该支撐軸，也可貫穿處理氣體供應頭並向下延 伸’且中間部固接於處理氣體供應頭；基板支撐機構部之 各抵接構件，係基板支撐機構部藉升降機構而上升後，其 上面即抵接於支撐軸之下端面。 再者，上述對向板之較佳材質，例如有：陶竞、不錄 鋼、石夕、紹、鈦、玻璃、及石英等。此外，上述對向板可 由1片板構成，亦可將複數片板併設於同一平面來構成， 其形狀也並無任何限制’可為三角形、四方形、六邊形、 圓形、橢圓形等形狀。 ^ ，上述基板的加熱溫度最好設定在200。(：〜500t ==右^在此範圍内，基板内所含雜質的蒸發便可 與上述處關㈣行m料職 量％以上的臭氧，介π & & ρ π 、虱亦可為臭氧與TE0S(矽酸四乙酯 (Tetraethyl orth〇si 文四乙酉曰 ucate，Sl(C2H5〇)4))之混合氣體。 【實施方式】 以下根據圖式，更詳細說明本發明。 一如：1圖所不’本例的臭氧處理裝置1係具有：具g 疋之内容積’且上却古 /、> 室1〇上邻Η 口邮 處理室i〇;設置成封閉處泡 一的盍體U ;水平配設於處理室10内，上 2UU4U5413 面供載置基板K的載晋Α 〇λ .w 口 支撐載置台20底面的支撐 裝置25，使支撐裝置 儿 ^ ^ ^ ® ^ /σ上下方向升降的升降裝置1 5 ; 及配设於載置台2〇 f>ne ^ ! Π ^ ^ 方的處理氣體供應頭40。而且處理 室10内的氣體，適岑wA 地 田攸排放口（未圖示）排出至外部。 載置台2 0係如第^ 一 ^ A 圖所不，係具有··平坦的上面供載 置基板K的上部構俥 · 。 彳1 ,及設置於其下側的下部構件2213 200405413. Furthermore, the position adjusting mechanism has, for example, a more specific structure of a support shaft "through cover f", one end portion to v has a thread, the one end is connected to the body, and the other end is fixedly screwed on The support shaft, the lice supply head; and the nut, the nut is abutted; ^ μ & The system is screwed on the other end and is supported by the body u At, use the carcass to move down to receive The limit support is suspended, but it can move upwards freely. According to the suspension mechanism, the relative positional relationship between the cover body and the processing gas ... = the position of the nut 'can be adjusted by adjusting the screwing. Therefore, the position of the nut of each suspension mechanism can be adjusted to the horizontal state of the facing plate after the cover is deformed to a horizontal shape. The entire area μ is widened in the product or medium opposite to the base plate and the facing plate. Make the interval even. The substrate surface is subjected to ozone treatment. a sentence and effective = 'Ozone treatment device with the same function as above, such as a wide-opening treatment chamber; the cover is set to close: the mouth; the mounting table is placed in the processing chamber and is loaded on top = The anti-heating mechanism is used to force the substrate placed on the mounting table. The processing gas supply head is arranged above the mounting table, and the two-, opposite plates are fixed below the head body. Opposite the substrate and the nozzle placed on the mounting table are openings on the opposite surface of the substrate on the opposite plate, so that the processing gas containing ozone is ejected to the substrate; the gas supply mechanism is used to supply the processing gas. The head supplies the processing gas and ejects it from the opening of the nozzle; and a plurality of suspension mechanisms are engaged with the cover and the processing gas: a supply head to suspend the processing gas supply head from the cover downward. The state support 14 200405413 can be set and the position of the processing gas supply head that is suspended and supported can be adjusted. In this case, the suspension mechanism can also be clamped on the cover to allow the processing gas supply head to be mounted. Horizontal displacement. Furthermore, the ozone treatment device described in this description is characterized by having: a processing chamber having an opening in the upper portion; a cover body provided to close the opening portion in the upper portion of the processing chamber; and a substrate supporting mechanism portion provided in the processing chamber. It also has a mounting surface on which the substrate is placed; a lifting mechanism is used to select and lift the substrate ^ building mechanism 'and a heating mechanism to heat the substrate placed on the mounting surface of the substrate support mechanism; The gas supply head is arranged above the mounting surface of the substrate supporting mechanism portion and has: a head body; an opposing plate fixed below the head body to be opposed to the substrate supporting mechanism; and a nozzle, A processing gas having an ozone opening on the opposite side of the substrate of the counter plate is ejected to the substrate; the gas supply mechanism is configured to supply the process gas to the processing chaos supply head and eject it from the opening of the nozzle; and a plurality of suspensions The mechanism is engaged with the cover body, u α w γ, and ⑤ body, supporting the processing gas supply head = the cover is suspended downward, and supporting the processing gas supply head 2 = moving; and the substrate support machine The structure part has abutment members located in the area of the mounting surface. After the substrate support mechanism part is raised by the lifting mechanism, each of the abutment members comes into contact with the processing gas head immediately. The more specific structure of the mechanism is, for example, constituted by a support shaft, supporting: 1V: the end penetrates the cover, and the engaging portion formed at the end abuts on the cover 2 =-end is fixed to the processing gas supply head; The support axis is in a state where the card is "abutted on the cover body" and the cover body is used to move downward. 15 200405413 The fork restricts and supports the suspension state, but it can move upwards freely. According to the suspension mechanism, handle The gas supply head is locked on the cover body and can be selected to move upward. Therefore, when the substrate supporting mechanism portion rises, each abutment member and component abuts the processing gas supply head, thereby lifting the processing gas supply head upward. Then, the processing gas supply head is placed on the abutting member of the substrate support mechanism portion. Thus, the substrate and the processing gas supply head placed on the mounting surface of the substrate support mechanism portion can be brought into contact with each other. The interval between the opposite plates is equal in the entire area of the opposite, and the surface of the substrate can be uniformly and efficiently subjected to ozone treatment. In this way, the deformation of the cover body is not restricted, and the Evenly spaced. Second, the suspension The structure can also have a position adjustment mechanism to adjust the position of the processing gas supply head in the up-and-down direction of the β-suspension and the branch. The end is provided with a thread, the-end penetrates the cover, and the other end is connected to the processing gas supply head; and a nut is screwed to the one and the support shaft, which is screwed to one end of the support shaft. Abutting on the cover body: In the state, the cover body is downwardly restricted and supported in a hanging shape to appeal to evil, but can be moved upward freely. Furthermore, the present invention can also be suspended by a spring pressing mechanism. The processing gas supply head suspended and cut by the mechanism springs down. The processing gas supply head is locked by the field crane mechanism so that the cover can be moved upwards, because & In the state of moving, the substrate is supported, and after a while, some or all of the abutting members are in a state where they cannot abut the milk supply head, and the processing gas supply head cannot be placed on the abutting 16 200405413 member, and Between the substrate and the opposite plate The intervals are not equal. However, as described above, if the processing gas supply head is pushed downward by the elastic mechanism, the processing gas supply head and the abutting member can be surely abutted, and the interval between the substrate and the opposite plate is indeed even. In addition, the support shaft can also pass through the processing gas supply head and extend downward 'and the middle portion is fixed to the processing gas supply head; each abutment member of the substrate support mechanism portion is the substrate support mechanism portion through the lifting mechanism. After rising, its upper surface is abutted against the lower end surface of the support shaft. Furthermore, the preferred materials of the above-mentioned facing plates include, for example, Tao Jing, Wulu Steel, Shi Xi, Shao, Titanium, Glass, and Quartz. In addition, the above-mentioned facing plate may be composed of one plate, or a plurality of plates may be arranged on the same plane, and there is no restriction on the shape. 'It may be a triangle, a square, a hexagon, a circle, an oval, etc. The shape of the substrate is preferably 200 ° C. (: ~ 500t == right ^ Within this range, the evaporation of impurities contained in the substrate can be related to the ozone of more than %% of the amount of the above mentioned materials, and π & & ρ π and lice can also be A mixed gas of ozone and TEOS (Tetraethyl orthose, ucate, Sl (C2H50) 4). [Embodiment] The following describes the present invention in more detail based on the drawings. As shown in the following: What is not shown in FIG. 1 is that the ozone treatment device 1 of this example has: the internal volume of g 疋 and the upper part of the room; the upper part of the room 10; the postal processing room i0; Carcass U; horizontally arranged in the processing chamber 10, and the upper 2UU4U5413 surface is provided for the loading of the substrate K Α 〇λ.w The supporting device 25 on the bottom surface of the mounting table 20 supports the supporting device ^ ^ ^ ® ^ / σ A lifting device 15 for lifting in the vertical direction; and a processing gas supply head 40 disposed on the mounting table 20f ≠ ^ ^ ^ ^ ^. Moreover, the gas in the processing chamber 10 is suitable for the wA ground field discharge port. (Not shown) is discharged to the outside. The mounting table 20 has a flat upper surface for placing the upper part of the substrate K, as shown in Figures ^ -1 ^ A. · Che. 1 left foot, and a lower portion thereof disposed on the lower side member 22
在上構件21中开3 士、L ^成上面有開口的複數個吸氣孔21 a、 及與吸氣孔21a連诵廿、击从 、，連接於未圖示之吸引機構的複數個The upper member 21 is opened by 3 士, and a plurality of suction holes 21 a having openings on the upper member 21 are opened, and a plurality of suction holes 21 a are connected to the suction hole 21 a, and are connected to a plurality of suction mechanisms (not shown).
連通孔m。下部構件22之底面係被支撐裝置25支撐。 再者上°卩構件21與下部構件22之間設有加熱器（未 圖不）。利用此加熱哭（去同一 。口（未圖不），將載置於上部構件Η上 面的基板K加献至g；{:々、w古 …、无疋〉里度。此外，上部構件21與下部 構件22的較佳材質例如右· 、 、 有·銘專。不過，當基板K之加 熱溫度為極高溫的愔況0本〇 主 守（例如’將基板K加熱至5 0 0 °c的 情況時），最好採用耐熱性佳的不銹鋼。通 孔 m。 Communication hole m. The bottom surface of the lower member 22 is supported by the supporting device 25. Furthermore, a heater (not shown) is provided between the upper member 21 and the lower member 22. Use this heating to cry (go to the same. Mouth (not shown), add the substrate K placed on the upper member Η to g; {: 々, w 古 ..., 疋 疋>). In addition, the upper member 21 The preferred materials for the lower member 22 are, for example, right, right, and right. However, when the heating temperature of the substrate K is extremely high, it is important to protect the substrate (for example, 'the substrate K is heated to 50 ° C. Case), it is best to use stainless steel with good heat resistance.
吸引機構(未圖示)係由真空泵等構成，用以對連通孔 加與吸氣孔21a㈣氣體進行吸引、排氣，將上部構件 1上面所載置的基板κ吸附於吸氣孔⑴的開口部。藉此 基板Κ便呈仿照上部構件2 i之上面的狀態。 如第1圖至第3圖所示，支樓裝置25得具有：固接於 下邛構件22底面中央部，以支撐其之第}支撐機構; =既定間隔配設，以支撐下部構件22底面的複數第2支 撐钱構30,由中空方管形成格子狀，以載置且固定第工支 撐機構26與各第2支撐機構30的基台28 ;及複數個抵接The suction mechanism (not shown) is constituted by a vacuum pump or the like, and sucks and exhausts the communication hole plus the suction hole 21a㈣ gas, and adsorbs the substrate κ placed on the upper member 1 to the opening of the suction hole ⑴ unit. Thereby, the substrate K is in a state of imitating the upper surface of the upper member 2 i. As shown in FIG. 1 to FIG. 3, the supporting device 25 must have a support mechanism that is fixed to the center of the bottom surface of the lower member 22 to support it; = a predetermined interval is arranged to support the bottom surface of the lower member 22 The plurality of second supporting money structures 30 are formed in a grid shape by hollow square tubes to place and fix the abutment 28 of the first support mechanism 26 and each second supporting mechanism 30; and a plurality of abutments
18 80之2下9太其豎设於基台28的端部上面(後述第2懸吊機構 轴：之下:置：以分別抵接於該第2懸吊機構… 再者，基台28之較佳铋所 y , , ^ , 鋼等。此外，其“ 貝，例如有：耐熱性佳的不錢 化。 土口 8由中空方管構成，因此可謀求輕量 各第2支撐機構30_ 31 , e 糸★弟4圖所示，具有：支撐構件 1疋平板狀基部31a、盥欧讯於其部w Ή h %碰1 ”丑5又於基部31 a上面的軸部 b所構成前視呈倒T字狀沾m # ., 蟫纹予狀的構件，其在軸部31b形成有 系、、文31 c ;螺合於虫累好q ( 徂^ C的螺帽32 ;支撐板33,其具有 t、軸部3 1 b嵌插的貫通q x、 加之狀能下，A广 於貫通孔33a嵌插著軸部 心下’其底面被螺巾冒Μ ±产· 透過連姓播杜w 孤系巾目32支撐，用來將支擇板33 处^運、、、口構件34而固定於下邱媸 • g, ^ ^ A ^ 下邛構件22底面的固定構件35 ’口 °又於基台28上面的安梦糂旌 …設置成隔件37:A=:^ 持構件38,設置於此隔件、^卜間形成既定間隙^保 … 隔件37上’以將支撐構件31之基部 保持於保持構件38與安裝構件36之間。 依據第2支撐機構3〇，藉 31 *1 έί 〇, αα ^ 9由適田凋整螺合於支撐構件 W螺紋31c的螺帽32之 f A ?n 上下方向位置，便可調整支撐載 置口 20的上下方向支撐位置。所以，當中央 撐機構26支撐的載置a 2f) 、 支 戰置口 20因本身重量而撓曲，载置台20 之周緣端部向下產生位銘眛难撕α σ 士、 生位移呤，使螺帽32朝上移動，便可 使載置台2 0周緣端部朝上產 ^ , 座生位移，來抵消因撓曲所產 之位和’藉此便可將載置台2。上面的平面度調整至適 1918 80 of 2 lower 9 Taiqi is erected on the end of the abutment 28 (the second suspension mechanism shaft described below: below: set: to abut the second suspension mechanism respectively ... Furthermore, the abutment 28 The preferred bismuth is y,, ^, steel, etc. In addition, its "shells" include, for example, good heat resistance and low cost. Since the soil opening 8 is composed of a hollow square tube, it is possible to achieve a lightweight second support mechanism 30_. 31, e 糸 ★ Brother 4 as shown in the figure, has: the support member 1 疋 flat plate-shaped base 31a, wash the European News in its part w Ή h% touch 1 ”Ugly 5 and the shaft part b above the base 31 a constitute Seen as an inverted T-shaped dipped m #., 蟫 予 pre-shaped member, which is formed on the shaft portion 31b, and the text 31 c; screwed to the worm tired q (徂 ^ C's nut 32; support plate 33, it has a through qx with t and shaft part 3 1 b inserted. In addition, A is wider than the through hole. 33a is inserted under the shaft's core. Its bottom surface is exposed by a screw. Du w Solitary towel head 32 support, used to fix the support plate 33 at the ^ transport, the, and the mouth member 34 and fixed to the lower Qiu g • g, ^ ^ A ^ the bottom of the lower member 22 is a fixed member 35 'mouth ° On the abutment 28 on the abutment ... set to separate Piece 37: A =: ^ holding member 38, which is disposed between the spacer and a predetermined gap ^ to ensure ... the spacer 37 'to hold the base of the support member 31 between the holding member 38 and the mounting member 36. According to the second support mechanism 30, the support mounting can be adjusted by the vertical position of f A? N of the nut 32 which is screwed onto the support member W thread 31c by 31 * 1 έ 〇, αα ^ 9 The support position in the vertical direction of the port 20. Therefore, when the mounting a 2f) supported by the central support mechanism 26 and the support port 20 are flexed due to their own weight, the peripheral end of the mounting table 20 is downwardly difficult to tear. α σ can be shifted upwards, and the nut 32 can be moved upwards, so that the end of the peripheral edge of the mounting table 20 can be turned upwards ^, and the displacement can be offset to offset the position caused by deflection and ' Adjust the mounting platform 2. The flatness of the upper surface is adjusted to 19
20040541J 當精度。 再者，隔件37厚度較支擇構 厚’在支據構件31上端面與 杨厚度略 有既定間隙(㈣。因此藉 牛38下…間形成 上下方向的移動你、^ 構& ’支撐構件31，其 上下方Θ的移動便被保持構件％限制， 八 向上’則可在安裝構件36上滑^ '八水平方 如第1圖與第2圖所示，在士 熱反射板18設置成鱼土 口 28的上方位置處，將 又置成與载置台2〇(下部構 熱反射板18透過固定構件 _ +向。 便可抑制來自载置台2〇的 碏此 象。此外，熱反射板18與固定構Μ溫度上升之現 :耐熱性佳的不銹鋼等。 的較佳材質例如有 的升降桿16升：1置15係具有貫穿處理室10底面而設置 a 28 ’升降桿16並透過支撐構件17來支撐基 :5二：夂升降裝置15的動作，使載置台2◦與支擇裝置 電勒”此外，升降裳置15係由油壓缸、氣壓缸、 電動汽缸等所構成。 再者，在處理室又< ‘ #加 &面豆έ又有，剞端形成尖銳狀、前 Ζ供基板Κ暫置的複數根支撐針12，支撐針12，係在 ° 2〇處於下降端位置時，便插穿載置台2。上所形成 且：通孔(未圖示），其前端從載置台20上面向上突出， 一載置口 20處於上升端位置時，便呈從該貫通孔（未圖 美么出的狀悲。此外，支撐針12雖未圖示，乃豎設於與 & 28袼子孔-致的位置，亦呈插穿熱反射板工8所形成 20 200405413 貫通孔（未圖示）的狀態。 所以，當載置台20處於下降端位置時，若 12上暫置基板κ之後，再使載置台2〇上升，支：針 ;目對於載置台2〇呈沉沒狀態，而將基板κ载：: 20(上部構件21)上。 m置。 係圖、第5圖至第9圖所示，處理氣體供應頭40 '、广有·塊狀頭本體41 ;設計成包圍頭本體41，並 撐二固定頭本體41的固定板45 ;及利用固定構件53固定 成從頭本體41下面起朝下懸吊的複數個噴嘴⑽。處 體供應頭4G並利㈣吊裝置6()而支撑成從蓋體u朝下· 懸吊的狀態。此外，噴嘴5〇係配設於頭本體4ι下 ’在第6圖中僅圖示其中一部分。 在頭本體41，分別形成從其側面之一端貫穿至另 的複數個貫通孔42 ;及與貫通孔42連通且在頭本體4ι : 面有開口的複數個連通孔43。在固定板45形成有：臭氧 氣體流路46;及將臭氧氣體流路46與各貫通孔42之—端 開口部分別連接的複數個連接孔47。將利用臭氧氣體產生^ 裝置55所產生的既定濃度臭氧氣體(處理氣體），由該臭 氧氣體產生裝置55供應給臭氧氣體流路46。此外，各貫 通孔42的另-端開π部係利用固定板45而分別封閉。、 各喷嘴50係由管狀構件構成，上側之開口部•連接 於連通孔43,且下側之開口部5〇b與基板〖表面對向。所20040541J When precision. Furthermore, the thickness of the spacer 37 is thicker than the thickness of the optional structure. 'There is a slight gap between the upper end surface of the support member 31 and the thickness of the poplar. The movement of the member 31, the upper and lower Θ is restricted by the holding member%, and it can slide on the mounting member 36 in the eighth upward direction. The eight-horizontal direction is shown in Figs. 1 and 2 and is provided on the heat reflecting plate 18. At the upper position of the Chengyukou 28, it will be placed in the same direction as the mounting table 20 (the lower structure heat reflection plate 18 passes through the fixing member _ +.) This can suppress the phenomenon from the mounting table 20. In addition, heat reflection The temperature rise of the plate 18 and the fixed structure M: stainless steel with good heat resistance, etc. The preferred material is, for example, a lifting rod 16 liters: 1 set 15 is provided with a 28 'lifting rod 16 penetrating through the bottom surface of the processing chamber 10 and transmitted through The support member 17 supports the base: 5 2: The operation of the lifting device 15 causes the mounting table 2 to be electrically connected to the supporting device. In addition, the lifting device 15 is composed of a hydraulic cylinder, a pneumatic cylinder, an electric cylinder, and the like. Furthermore, in the processing room, there is <'# 加 &面; A plurality of sharp, front Z substrates K are temporarily held by a plurality of support pins 12, and when the support pins 12 are at the lower end position of ° 20, they are inserted through the mounting table 2. A through hole (not shown) ), Its front end protrudes upward from the mounting table 20, and when the mounting port 20 is at the rising end position, it appears from the through hole (not shown in the figure). In addition, although the support needle 12 is not shown, it is It is erected at a position corresponding to the & 28 袼 子 孔, and is also inserted through the through hole (not shown) 20 200405413 formed by the heat reflecting panel worker 8. Therefore, when the mounting table 20 is at the lower end position, If the substrate κ is temporarily placed on 12, then the mounting table 20 is raised and supported: needle; the substrate κ is sunk, and the substrate κ is placed on: 20 (upper member 21). As shown in FIGS. 5 to 9, the process gas supply head 40 ′, the wide and block head body 41, is designed to surround the head body 41 and support the two fixing plates 45 for fixing the head body 41; The member 53 is fixed to a plurality of nozzles ⑽ suspended downward from the head main body 41. The body supply head 4G and the hoisting device 6 () It is supported downward from the cover u and is suspended. In addition, the nozzle 50 is disposed below the head body 4 ′, and only a part of it is shown in FIG. 6. The head body 41 is formed from its side, respectively. One end penetrates to another plurality of through holes 42; and a plurality of communication holes 43 communicating with the through holes 42 and having an opening on the head body 4m. The fixing plate 45 is formed with an ozone gas flow path 46; and ozone The gas flow path 46 is connected to a plurality of connection holes 47 at one end of each of the through holes 42. A predetermined concentration of ozone gas (processing gas) generated by the ozone gas generating device 55 is used by the ozone gas generating device 55 It is supplied to the ozone gas flow path 46. In addition, the other-opening π portions of each through-hole 42 are closed by the fixing plate 45, respectively. Each nozzle 50 is formed of a tubular member. The upper opening is connected to the communication hole 43, and the lower opening 50b faces the surface of the substrate. All
以，從臭氧氣體產生Μ 55依序經由臭氧氣體流路I 連接孔4 7、貫通孔4 2、月；查、s 丨/1。 及連通孔43，而供應給噴嘴5〇的 21 200405413 臭氧氣體，將從其下部開口冑5Gb朝向基^表面喷出。 再者，在各喷嘴50的下端處分別固設著與基板Κ對向 的俯視六邊形之凸緣狀對向51，對向板51係以在鄰接 之各對向板51間形成既定間隙52之方式設置於同一平面 内此外，對向板51之較佳材質例如有：陶究、不㈣ 、石夕、紹、鈦、玻璃及石英等。 再者，在頭本體41及固定板45上面，形成複數個鋸 :狀凹槽41a ’在各凹;41a内分別埋設著冷卻液管57。 / 7卻液循環裝X 5 6將冷卻液供應給冷卻液管5 7内，並 進行循環。 愁吊裝置60係具有··支撐頭本體41上面中央部白 立〜吊機構70，及以既定間隔配設，以支樓固定板 部的複數個第2懸吊機構8〇。 第1懸吊機構70係如第7圖所示，具有：安裝構件 、香’、固叹於蓋體Π上，並具備形成與該蓋體i】上所形 成貝通孔11a為同軸之貫通孔71a ;支撐車由73，其上端部Therefore, M 55 is generated from the ozone gas through the ozone gas flow path I in order to connect the holes 47, the through holes 4 and 2; 21 200405413 ozone gas supplied to the nozzle 50 and the communication hole 43 is ejected from the lower opening Gb5Gb toward the base surface. Furthermore, a flange-like facing 51 in a hexagonal shape in plan view opposite to the substrate K is fixed to the lower end of each nozzle 50, and the facing plates 51 are formed to form a predetermined gap between adjacent facing plates 51. The method of 52 is set in the same plane. In addition, the preferred materials of the facing plate 51 include, for example, ceramics, non-metallic, Shi Xi, Shao, titanium, glass, and quartz. Furthermore, a plurality of saw-shaped grooves 41a 'are formed on the head body 41 and the fixing plate 45, and the coolant pipes 57 are embedded in the recesses 41a. The / 7 coolant circulation unit X 5 6 supplies the coolant into the coolant pipe 5 7 and circulates. The anxiety lifting device 60 is provided with a suspending mechanism 70 at the center of the upper surface of the support head body 41, and a plurality of second suspending mechanisms 80 arranged at predetermined intervals and fixed to the slab portion of the building. As shown in FIG. 7, the first suspension mechanism 70 includes: a mounting member, a fragrant, fixed on the cover body Π, and a through-hole 11a formed coaxially with the through hole 11a formed on the cover body. Hole 71a; support car by 73, its upper end
1螺紋73a，插穿蓋體11之貫通iL 11a及安裝構件71 之貝通孔71a，配設成該上端部從安裝構件71向上突出之 狀態4其下端部固接於處理氣體供應頭4G之頭本體41 虫螺合於螺紋73a的調整螺巾f 74(74a，74b);配設於調整 、巾目74a與安裝構件71之間的墊圈72 ;及配設於安裝構 71 ”頭本體41之間，並覆蓋支撐軸73的蛇腹管75。 於*再者’帛2懸吊機構80係如第8圖所示，具有：固設 ;風版11上，並具備形成與蓋體11上所形成貫通孔11 b 22 200405413 為同軸之貫通孔81a的安裝構件81;支撐軸83 部形成螺紋83a，插穿蓋體u之 ，山而 81之貫通孔81a，而配設成哕上山 &女裝構件 突出的肤於b "而口p從安裝構件81向上 二以下端部83b從固定板45下面朝下突 …’將中間部(上端部與下端部之間)螺裝於 二 上所形成之母螺紋45b;螺合於⑽ 事屬);配設於調整螺帽84a與安裝構件δ = 墊圈犯;及配設於蓋體u與固定板45之冓間的 85及蛇腹管86;且支撐軸8 S ”疋舞黃 29上面。 面83c抵接於各抵接構件 由上述構造可輕易瞭解，依 懸吊機構8。，在各調整螺帽74康4 =吊機構7〇與第2 7, ^ 體U上面的狀態，支撐軸 ，。下之移動分別被限制，將4 ίΐ ίί # π ；* 成懸吊於蓋體u的狀態，且支:=3供應頭40支撐 , Μ ,. 又葆軸73, 83分別可向上移 猎此處理氣體供應頭4〇亦可朝上移動。 所以’依據第1懸吊機槿7Π & #。> 由適當調節螺合於支撐轴73, 83之二螺二吊機構8〇 ’藉 位置’便可適當調整蓋體u理氣供目74’84的螺入 對的位置關係。此外，螺旋彈== 體供應頭40之間的位置 與處理亂 4〇朝下推的作用。 ’、中-有將處理氣體供應頭 再者若利用升降裝置15使去；% 抵接構件29上升，便牙义置25上升而使各 圖所不抵接於第2懸吊機構 23 200405413 專車83之下面83c，各抵接構件便將支撐軸 與處理虱體供應碩4〇 一起以抵抗螺旋彈簧Μ之 方式舉起。 干^力之 然後’此時，對向板51下面與基板κ表面之 g成為既定間隔（你“ π 9 . Λ x lw， 例如，0.2mm〜1.〇_)。此外，支 係預先調整上述螺農位置，使其下端部伽從固定板2 了面突出既^量，藉以使上述間隔g可確保上述既定間隔 依據如上述般構成之本例之臭氧處理裝置丨，首 用適當機構在支撐針12上載置基板K。此時，载置台2〇 7位置乃處於下降端的位置。又從冷卻液循環裝置月 供應冷卻液並使其循環，並利用此 时頭本體41予以冷卻。 上升其利用升降裝置15使載置台20與支撐裝置25 =置2 :相對於載置台2°沉沒，將基板Κ載置 之=:广 而且各抵接構件29抵接於支撐軸83 C ’然後載置台20到達上升端位置。此外，載置 度载置台2◦上的基板κ，被加熱器(未圖示)加熱至既定溫 從二"處理氣體供應頭40從藉第2懸吊機構8〇而成 』11朝下懸吊之狀態，轉變為被各抵接構件29支樓 向上舉起的狀態’而該處理氣體供應頭Μ 下面與基板Κ表面間的間隔g，則成為既定間隔(例如 u. 2mm〜1· 〇_)。 24 200405413 再者，若基板K載置於載置台2 0上面，便利用吸引機 構（未圖示）吸引連通孔21b與吸氣孔21a内的氣體並排氣 ’基板K被吸氣孔21 a之開口部所吸附而成仿照該上面（ ‘ 上部構件21上面）的狀態，並被加熱器23加熱至既定溫 度。 然後’既定濃度的臭氧氣體從臭氧氣體產生裝置55， 依序經由臭氧氣體流路46、連接孔47、貫通孔42及連通 孔43，而供應給喷嘴5〇，並從其下部開口部5〇b朝向基 板K表面噴出。 馨 依此所噴出的臭氧氣體，在撞擊基板K之後，便形成 沿其流動的臭氧氣體層，在此種流動中，臭氧（〇3)，乃利 用基板K而被加熱，藉由此種加熱、或與基板κ或光阻間 的接觸，而分解為氧（02)與活性氧（0*)，利用此活性氧 (〇)而在基板κ表面上形成氧化膜，或將基板κ表面上的 氧化膜予以改質，甚或利用與活性氧之間的熱化學反應， 而將基板κ表面上所形成的光阻膜予以去除。 然後，從各噴嘴50喷出並沿基板κ流動的臭氧氣體，拳 相互撞擊而成為朝向各對向板51間之間隙52的流動，並 從此間隙52朝對向板51背面（上面）側（即，從基板κ與 對向板51之間）進行排氣。藉此，處理後的臭氧氣體滯留 於基板Κ表面附近，可防止發生從噴嘴5()喷出的臭氧氣 體難以到達基板Κ表面的情況發生，並可有效地進行氧化 \幵y成其改質、或光阻膜去除之類的上述處理。 還有，如上述，基板κ與對向板51間的間隔g，是控 25 制沿基板κ表面流動的臭氧n鲈 ρ3 α, _果虱孔體流之層厚者，藉由將該間1 Thread 73a is inserted through the cover 11 through the iL 11a and the through hole 71a of the mounting member 71, and is arranged so that the upper end portion projects upward from the mounting member 71. 4 The lower end portion is fixed to the processing gas supply head 4G. The head body 41 is an adjustment nut f 74 (74a, 74b) screwed to the thread 73a; a washer 72 disposed between the adjustment, the head 74a and the mounting member 71; and the head body 41 " And the bellows tube 75 supporting the support shaft 73. As shown in Fig. 8, the suspension mechanism 80 is provided with: fixed; a wind plate 11; The formed through hole 11 b 22 200405413 is a mounting member 81 of the coaxial through hole 81a; the support shaft 83 is formed with a thread 83a, and is inserted into the through hole 81a of the cover u and the mountain, and is arranged as 哕 上山 & The women's components protrude from the skin, and the mouth p projects upward from the mounting member 81 and the two lower ends 83b protrude downward from the fixing plate 45 ... 'The middle part (between the upper end part and the lower end part) is screwed on the second part The formed female thread 45b; screwed to the ⑽); allocated to the adjusting nut 84a and the mounting member δ = washer; and allocated to the cover u and Fixed plate 85 and the bellows tube 86 of the ten billions 45; and the support shaft 29 above 8 S "Piece Goods dance yellow. The surface 83c is in contact with each abutment member. The structure can be easily understood from the above structure, and the suspension mechanism 8 is used. In the state of each adjusting nut 74 Kang 4 = the lifting mechanism 70 and the second 7, ^ body U, support the shaft. The next movement is restricted respectively, and 4 ίΐ ίί # π; * is suspended from the cover u, and the support: = 3 supply head 40 support, Μ ,. and 葆 轴 73, 83 can be moved up to hunt this The process gas supply head 40 can also be moved upward. Therefore, ’according to the first suspension machine hibiscus 7Π &#. > The positional relationship of the screw-in pairs of the cover body and the gas supply head 74'84 can be adjusted appropriately by appropriately adjusting the two screw two-hanging mechanism 80 which is screwed to the support shafts 73, 83. In addition, the position of the spiral bomb == the body supply head 40 and the processing disorder 40 push down. '、 Medium-Yes, if the processing gas supply head is lifted by the lifting device 15;% the abutment member 29 rises, and the dental implant 25 rises so that the drawings are not in contact with the second suspension mechanism 23 200405413 Below 83c of 83, each abutment member lifts the support shaft together with the processing lice body supply 40 to resist the coil spring M. Then, at this time, the g of the underside of the facing plate 51 and the surface of the substrate κ becomes a predetermined interval (you "π 9. Λ x lw, for example, 0.2mm ~ 1.〇_). In addition, the branches are adjusted in advance The position of the above-mentioned screw farmer is such that its lower end portion protrudes from the surface of the fixed plate 2 so that the interval g can ensure that the predetermined interval is based on the ozone treatment device of this example constructed as described above. The support pin 12 mounts the substrate K. At this time, the position of the mounting table 207 is at the lower end position. The cooling liquid is supplied from the cooling liquid circulation device and circulated, and the head body 41 is used for cooling at this time. Use the lifting device 15 to place the mounting table 20 and the supporting device 25 = 2: sink 2 ° relative to the mounting table, place the substrate K =: wide and each abutment member 29 abuts against the support shaft 83 C ′ and then the mounting table 20 reaches the rising end position. In addition, the substrate κ on the mounting stage 2◦ is heated to a predetermined temperature by a heater (not shown) from the second " processing gas supply head 40 and the second suspension mechanism 8o. Resulting "11 is suspended downwards, and is transformed into abutting structures. The state 29 is lifted upwards, and the interval g between the lower surface of the processing gas supply head M and the surface of the substrate K becomes a predetermined interval (for example, u. 2mm ~ 1 · 〇_). 24 200405413 Furthermore, if the substrate K is placed on the mounting table 20, and it is convenient to use a suction mechanism (not shown) to suck the gas in the communication hole 21b and the suction hole 21a and exhaust it. The substrate K is adsorbed by the opening of the suction hole 21a. Following the state of the upper surface (the upper surface of the upper member 21), it is heated to a predetermined temperature by the heater 23. Then, ozone gas of a predetermined concentration is passed from the ozone gas generating device 55 through the ozone gas flow path 46, the connection hole 47, The through hole 42 and the communication hole 43 are supplied to the nozzle 50 and sprayed toward the surface of the substrate K from the lower opening portion 50b. After the ozone gas sprayed by Xin hits the substrate K, it flows along it. In this flow, the ozone (〇3) is heated by the substrate K, and by this heating or contact with the substrate κ or photoresist, it is decomposed into oxygen (02) and Active oxygen (0 *), using this active oxygen (〇) and An oxide film is formed on the surface of the substrate κ, or the oxide film on the surface of the substrate κ is modified, or the photoresist film formed on the surface of the substrate κ is removed by using a thermochemical reaction with active oxygen. Then, The ozone gas ejected from each nozzle 50 and flowing along the substrate κ collides with each other to form a flow toward the gap 52 between the opposed plates 51, and from this gap 52 toward the back (upper) side of the opposed plates 51 (that is, (Between the substrate κ and the opposing plate 51). This allows the treated ozone gas to stay near the surface of the substrate K, which prevents the ozone gas sprayed from the nozzle 5 () from reaching the surface of the substrate K. Occurs, and the above-mentioned processes such as oxidation, modification, or photoresist film removal can be effectively performed. In addition, as described above, the interval g between the substrate κ and the opposing plate 51 is a layer that controls the thickness of the ozone n bass ρ3 α, _ pectin pore flow that flows along the surface of the substrate κ.
阳δ «又疋為既定間隔（例如：D 古4α 0·2_〜1·0_)，便可均勻且 有效率地進行臭氧處理。 ?η广但是，如上述習知臭氧處理裝置，若為僅支撐載置二 20底面中央部之構造，載 牙戟置口 g, th . . ^ ^ σ 20便因本身重量而撓曲， …、法使基板Κ與對向板51 中落於既—一㈤ 门的間隔g，在所有區域Yang δ 疋 is a predetermined interval (for example: D ancient 4α 0 · 2_ ~ 1 · 0_), so that ozone treatment can be performed uniformly and efficiently. ? η But, as in the above-mentioned conventional ozone treatment device, if the structure only supports the central portion of the bottom 20, the dental mouthpiece g, th... ^ σ 20 will flex due to its own weight,… The method makes the base plate K and the opposite plate 51 fall at the existing-a gap g of the door, in all areas
1=:_，而無法達成均勻且有效率處理基板K 因此即便常溫下將1上面=广皮加熱至高溫狀態， 高、，下㈣ 面的千面度加工至高精度，但是在 ::下熱變形仍使該平面度惡化，隨此平面度的惡 …、法使上述間隔g落於既定範圍内。 支撐理裝置〗，利用第1支撐機構26 第" &巾央部，並利用可調整支撐位置的 弟2支撐機構3〇來支 ^ ，當中央部赫第… 的其他部位。藉此 量而撓構26切的载置台2G因本身重 變开^ 朝下產生位移，或該周緣端部因敎 文形而朝下產生位移時，便 u- 上移動，以抵消上述撓曲所產生的 之方式使載置台20之用絲★山加ά 人义小里 载置么9λ 之周緣端部朝上產生位移，藉此可將 α 上面之平面度調整 例之臭氧處理裝置】^ 斤以，依據本 域中，可使與對向板51對向的所有區 對基W表面進行臭氧處理。 …有政率地 者在處理氣體供應頭固設於蓋體而構成的上述習 26 :臭氧處理裝置中，處理氣體供應頭亦隨蓋體之變形而變 ^ ’因此無法使基板與對向板間的間隔，在所有區域中落 範圍内，而無法達成均勾且有效率地處理基板κ表 面的原始目的。 因此，在本例的臭氧處理裝置！中，複數個第！懸吊 枝構70與第2懸吊機構8〇 洛駟糾* 卞合於盍體11，將處理 40支撐成從蓋體11朝下懸吊之狀態，且將處 理乳體供應頭40支撐成可鈿μ必4 個第1懸吊機構7〇盘第2种^ 狀態；且藉由複數 頭40 +… 懸吊機構8°，將處理氣體供應 而進r:7盍體U，同時支撐裝置25利用升降裝置15 之後，各抵接構件29上面便抵接於螺裝在處 乳體i、應頭40上的支擇軸83之下面83c，並支撐立。 吊機述，依據本例之第1懸吊機構7。與第2懸 巾钱構8 0 ’在各調^ 7 構件m 透過塾圈72,82、與安裝 = 於蓋體11上_^ 蓋體11 ’將處理氣體供應頭40支撐成從 ，藉此處理氣體供應頭4。便可朝上移動：’可向上移動 抵接:::29:=:二置15使支樓裝置25…使各 的下面83c，將各抿接^於弟2懸吊機構80之支撐軸83 以抵抗螺旋彈菩85之=牛力29與處理氣體供應頭40 一起 -的之弹壓力之方式朝上舉起。 40重量而^如即便盖體11因本身重量或處理氣體供應頭 而…由於將處理氣體供應頭40以各抵接構件 27 200405413 2 9並透過第2懸 拘蓋體11的變形 ，使其間隔均等， 臭氣處理。 吊機構80之支撐軸83朝上舉起，故可不 ，在基板K與喷嘴5〇對向之全部區域中 俾可均勻且有效率地對基板κ表面進行 綠吊Lt ’因為處理氣體供應頭40利用可朝上移動的第 、70與第2懸吊機構8〇而卡止於蓋體"，因此，1 =: _, and it is not possible to achieve uniform and efficient processing of substrate K. Therefore, even if the upper surface = wide skin is heated to a high temperature at normal temperature, the surface of the lower surface is processed to a high degree of precision, but the heat is lower than: Deformation still worsens the flatness. With the flatness, the method makes the above-mentioned interval g fall within a predetermined range. The supporting device uses the first supporting mechanism 26 and the center of the towel, and the second supporting mechanism 30 which can adjust the supporting position to support it. When it is the other part of the central part of the Hedi ... With this amount, the mounting table 2G of 26 cuts is deformed due to its reopening ^ When it is displaced downward, or when the peripheral end is displaced downward due to the inscription, it moves u- up to offset the above-mentioned deflection The generated method causes the silk of the mounting table 20 to be moved. ★ The upper end of 9λ is placed on the side of the righteousness, and the end of the peripheral edge of 9λ is shifted upwards, so that the ozone treatment device of the flatness adjustment example above α can be adjusted. In other words, according to this domain, the surface of the base W can be subjected to ozone treatment in all the regions opposed to the facing plate 51. … The above-mentioned habit of the competent person in the treatment gas supply head fixed to the cover 26: in the ozone treatment device, the processing gas supply head also changes with the deformation of the cover ^ 'Therefore, the substrate and the opposite plate cannot be made The interval is within the range of all areas, and the original purpose of uniformly and efficiently treating the surface of the substrate κ cannot be achieved. Therefore, the ozone treatment device in this example! In the plural! The hanging branch structure 70 and the second suspension mechanism 80 are combined with the carcass 11 to support the treatment 40 in a state of being suspended from the cover 11 and to support the treatment milk supply head 40 to It can be used for 4 first suspension mechanisms, 70 disks, 2nd state; and through a plurality of 40 + ... suspension mechanisms at 8 °, the processing gas is supplied into the r: 7 carcass U, while supporting the device. 25 After the lifting device 15 is used, the upper surface of each abutment member 29 abuts on the lower surface 83c of the support shaft 83 screwed on the breast body i and the application head 40, and stands upright. The crane is described according to the first suspension mechanism 7 of this example. With the second drape 8 0 ', each member ^ 7 member m passes through the loops 72, 82, and is mounted on the cover 11 _ ^ The cover 11' supports the processing gas supply head 40 as a slave, thereby Process gas supply head 4. Then you can move upward: 'You can move upward to abut ::: 29: =: two sets of 15 to make the supporting device 25 ... to make the lower surface 83c, connect each to the support shaft 83 of the suspension mechanism 80 Raise upwards in a manner that resists the bombardment pressure of the spiral bomb 85 = cattle force 29 together with the processing gas supply head 40-. If the cover 11 is due to its own weight or the processing gas supply head ... the processing gas supply head 40 is contacted with each of the contact members 27 200405413 2 9 and the deformation of the second suspension cover 11 is caused to be spaced apart. Equal, odor treatment. The support shaft 83 of the hoisting mechanism 80 is lifted upward, so it is not necessary to perform green hoisting on the surface of the substrate κ uniformly and efficiently in the entire area where the substrate K and the nozzle 50 face each other. Because the processing gas supply head 40 The upper, 70, and 2 suspension mechanisms 80 are used to lock the cover body. Therefore,
:某^因’處理氣體供應頭4Q保持於朝上移動以 狀恶’支撐裝f 25上升後，一部分或全部抵接構件29 ^ 現無法抵接於支撐軸83之下面83c的狀態，在此情況7 處理軋體供應頭40並未載置於抵接構件29上，而無这 使基板K與對向板51間之間隔均等，但是若如上述，利 用螺旋彈耳85對處理氣體供應頭4〇賦予朝下之彈壓力， 便可使支撐軸83與抵接構件29確實抵接，俾可將基板{ 與對向板51間之間隔確實為均等。: Some ^ due to the 'processing gas supply head 4Q keeps moving upwards and it looks like evil' after the supporting device f 25 rises, some or all of the abutting members 29 ^ cannot be in contact with the lower surface 83c of the support shaft 83, here Case 7 The processing rolling body supply head 40 is not placed on the abutment member 29, and this does not make the interval between the substrate K and the counter plate 51 equal. However, as described above, the spiral gas spring 85 is used to process the processing gas supply head. 40. By applying a downward spring pressure, the support shaft 83 and the abutment member 29 can be surely contacted, and the interval between the substrate {and the opposing plate 51 can be made uniform.
再者，因為載置台20係被内建的加熱器23加熱而熱 月心脹，且支撐構件31乃其上下方向的移動受限制，而其 水平方向可移動的構造，因此載置台2〇將可在不受任何 拘束的情況下，朝水平方向熱膨脹，不致因位移的拘束而 熱變形。 再者，因為載置台20上所載置的基板K被吸附於吸氣 孔21 a的開口部，因此例如即便基板κ翹曲導致其表面平 面度惡化的情況下，藉由將其吸附於載置台2〇上面，便 可仿照載置台20上面，藉此便可將基板κ表面平面度形 成適當狀態。 28 200405413 再者，處理室10内的氣氛温度利用加熱器（未圖示）昇 溫而呈高溫狀態，頭本體41便利用呈高溫狀態的氣氛而 昇溫，但是因為使頭本體41藉冷卻液管57内所流通的冷 卻液而冷卻’因此在貫通孔42㈣通的臭氧氣體，便被 此冷部液所冷卻，而將其溫度維持於_ ^範圍内。藉此防 止溫度上升所造成之臭氧熱分解，並防止上述臭氧氣體中 的臭氧濃度降低。Furthermore, since the mounting table 20 is heated by the built-in heater 23 and swells on the moon, and the support member 31 has a structure in which movement in the up-down direction is restricted, and its horizontal direction is movable, the mounting table 20 will It can be thermally expanded in the horizontal direction without any restriction, and it will not be thermally deformed due to the restriction of displacement. Furthermore, since the substrate K placed on the mounting table 20 is attracted to the opening of the suction hole 21 a, even if the surface flatness of the substrate κ is degraded, the substrate K is attracted to the support. By placing the upper surface of the stage 20, the upper surface of the mounting stage 20 can be imitated, whereby the surface flatness of the substrate κ can be formed into an appropriate state. 28 200405413 Furthermore, the temperature of the atmosphere in the processing chamber 10 is raised to a high temperature by a heater (not shown). The head body 41 is conveniently heated in a high-temperature atmosphere, but because the head body 41 is cooled by the cooling pipe 57 It is cooled by the cooling liquid flowing through it. Therefore, the ozone gas passing through the through-hole 42 is cooled by this cold liquid, and the temperature is maintained in the range of _ ^. This prevents the thermal decomposition of ozone caused by temperature rise, and prevents the ozone concentration in the ozone gas from decreasing.
卜再者，上述基板κ的加熱溫度，最好在200t:〜50(rc 範圍内。若在此範圍内，基κ内所含雜質的基發便可盥 上述處理同時實施。此外，上述臭氧氣體最好含14重量% ^上之臭氧’亦可為臭氧與舰（料四乙⑹Tetraethyl th〇Slllcate ; Si(C2H50)4))混合氣體 以上，雖針對本發明一實施形態進行說明，惟本發明 可採用的具體態樣並不僅限定於上述。 例如在上例中，第2域機構3()雖形成可調整支撐1 置口 2 0之支撐位置的構造 π π > 仁疋即便第1支撐機構26乃In addition, the heating temperature of the substrate κ is preferably in the range of 200t: ~ 50 (rc. If it is within this range, the base hair of impurities contained in the base κ can be treated simultaneously with the above treatment. In addition, the above-mentioned ozone The gas preferably contains 14% by weight of ozone. It can also be a mixture of ozone and warship (Tetraethyl thoSlllcate; Si (C2H50) 4)). Although described in accordance with an embodiment of the present invention, the present invention The specific aspects that the invention can adopt are not limited to the above. For example, in the above example, the second domain mechanism 3 () has a structure that can adjust the support position of the support 1 and the opening 2 0. π π >
了形成可調整其支撐位置的構造。 再者，雖僅利用第2支撐 牙械構30之螺帽32來從下 撐載置台20而構成，但是亦 + κ田 疋办了如第4圖中二點鏈線A structure capable of adjusting its supporting position was formed. In addition, although only the nut 32 of the second support mechanism 30 is used to support the mounting table 20 from below, it is also + κ 田 疋 as shown in Figure 4
不，除螺帽32之外，另訊罢诉ANo, in addition to the nut 32, the other lawsuit A
Oo 卜另"又置螺帽32，，利用該箄螺 2,32’形成挾住支撐板％ 。 ” 20 . 狀心依此的話，當載置 該位移。 猎由將其朝下拉引，便可修」 再者’在上例中 雖構成使抵接構件29抵接於支撐軸 29 200405413 83下面的構造’但是亦可取代此，而改為使抵接構件μ 直接抵接於處理氣體供應頭4〇下面的構造。 再者，上例的第2懸吊機構㈣並不僅限於 所示構造。即，此第2支撐機㈣係由下 =所構成：固設於固定板45上面的安裝構件Μ;插 ::941:貝通：Ub的調編92;下端部透過安裝 * η又於固疋板45上，且插穿調整軸套 孔92a，上螺纹邻qip碑人 去以您貝通 螺紋部92b中^支於調整軸套92上端部所形成母 # 、、牛93, 94間的蛇腹管95，·螺裝於 支撐軸91螺紋部91a的 衣万、 部所形成螺紋部他的螺帽98.’^^_套92外周 部所开累巾目98 ’螺接於調整軸套92外周 "上而成累、，、“"2c上的螺帽98;介裝於螺帽98與蓋體 之間的墊圈97與隔件96a;介裝於調整軸套犯與 豆11下面間的隔件96b等。 i ，便=此第2支擇機構90，藉由轉鬆螺帽98與螺帽99 套:可使：整轴套92以其轴中心旋轉，如此般使調整轴 ^之^轉^可從支樓轴91之上螺紋部…與調整車由套 移動，俾：:T广的螺合關係’支禮轴91沿上下方向 、凋1處理軋體供應頭40的上下方向位置。 與支利用轉緊螺帽98與螺帽99,來將調整軸套92 於蓋^ 1由1 9。1固疋於盖體11，結果處理氣體供應頭40固定 所以，依上述，藉由調整各第2支擇機構9〇之支榜軸 30 200405413 91的上下方向位置，便可調整處理氣體供應頭4〇的各處 上下位置，俾可在基板K與對向板51對向的所有區域中 ，使其間隔均等。 再者’雖未特別圖示，但是即便上例的第1懸吊機構 70，亦可採用相同的構造。 “ 在上述的第2支撐機構90之位置調整中，亦可採用第 Η圖與第12圖所示之量測裝置1〇〇，或第13圖與第η 圖所示之量測裝置11 〇。 第11圖與第12圖所示之量測裝置丨〇〇係具有··具備 測頭l〇la的測微錶（dial gauge)1〇1 ;保持測微錶ι〇/〗、的 保持構件1 〇 2，载置保持構件1 0 2的支撐板1 0 3 ;及支樓 支撐板103的支撐柱1〇4等。 保持構件102係具有導引測頭1〇la上下移動的導件 l〇2a，並於此保持構件1〇2插穿貫通孔1〇3&之狀態下載 置於支撐板103上。 再者，在蓋體11穿設量測孔丨丨c，在頭本體4丨穿設 量測孔41b，在固定構件53穿設量測孔53a，測頭 則插穿量測孔11c，41b，53a。 所以依據里測裝置1 〇 〇，根據測頭1 〇 1 a前端部從對 向板51，51間之間隙52抵接於載置台2〇(上部構件21)上 面時測微II 101 m、與I其位置水平移冑而使測頭 101a前端部抵接於對向板51背面時測微錶1〇1之度數， k兩者度數之差值扣除對向板5丨厚度，便可計算出（量測 )對向板51下面與載置台20上面間之間隔（上述g)。 31 200405413 再者’第13圖與第14圖所示之量測裝置ιι〇，係且 有：利用三角測量法量測距離的雷射測長器ιη;保持雷 射測長器m的可動板112:支擇可動板ιΐ2的支撐板 113，及支撑支撐板113的支撐柱114。 在支撐板113上配設導軌115118 ’在導軌ιΐ5將滑 件116，Η7卡合成可沿導軌115移動自如，同樣的，在導 軌ι18將滑们19卡合成可沿導軌118移動自如，可動板 112便載置並固定於滑件116，117119上，且沿箭頭η—工Oo Bu " sets a nut 32 again, and uses the snails 2,32 'to form a holding support plate%. "20. If the center of mind is in this way, when the displacement is placed. You can repair it by pulling it downwards." Also, in the above example, although the abutment member 29 is abutted against the support shaft 29 200405413 83 However, the structure may be replaced with a structure in which the contact member μ directly contacts the processing gas supply head 40. The second suspension mechanism ㈣ in the above example is not limited to the structure shown. That is, the second supporting machine is composed of: a mounting member M fixed on the fixing plate 45; plug :: 941: Beton: Ub's adjustment 92; the lower end is installed through the fixing * η and then fixed On the fascia plate 45 and inserted through the adjusting sleeve sleeve hole 92a, the upper thread is adjacent to the qip tablet to use the female thread formed by your Beton threaded portion 92b to support the upper end portion of the adjusting sleeve 92. The bellows tube 95 is screwed to the threaded portion formed by the threaded portion 91a of the support shaft 91, and the nut 98. '^ __ set 92 is opened on the outer periphery of the head 98' and is screwed to the adjustment sleeve The outer periphery of the 92 " is tired, " " The nut 98 on 2c " is inserted between the nut 98 and the cover body washer 97 and the spacer 96a; is inserted between the adjustment shaft sleeve and the bean 11 The lower spacer 96b, etc. i, then = the second supporting mechanism 90, by loosening the nut 98 and the nut 99 sets: can make: the entire shaft sleeve 92 rotates around its axis center, so that the adjustment The shaft ^ of ^ turn ^ can be moved from the threaded part above the branch shaft 91 ... and the adjustment car is moved by the sleeve, 俾 :: T wide screwing relationship 'The support shaft 91 is in the up and down direction, and the rolling body supply head 40 Up and down position. The nut 98 and the nut 99 are used to fix the adjusting sleeve 92 to the cover ^ 1 and fixed to the cover 11 by 19.1. As a result, the processing gas supply head 40 is fixed. Therefore, by adjusting each of the second options as described above, The vertical position of the supporting axis 30 200405413 91 of the mechanism 90 can adjust the upper and lower positions of the processing gas supply head 40, and it can be spaced in all areas where the substrate K and the opposite plate 51 are opposed. Equal. Moreover, although not specifically shown, even the first suspension mechanism 70 of the above example can adopt the same structure. "In the adjustment of the position of the second support mechanism 90 described above, the second figure can also be adopted. And the measuring device 100 shown in Fig. 12 or the measuring device 11 shown in Fig. 13 and η. The measuring device shown in Fig. 11 and Fig. 12 is a micrometer (diale gauge) 10 with a probe 10a; a holding member for holding the micrometer ι // 10, a support plate 103 for holding the holding member 102, and a support column 104 of the supporting plate 103 of the building. The holding member 102 is provided with a guide 102a for guiding the probe 10a to move up and down. The holding member 102 is inserted into the support plate 103 in a state where the holding member 102 is inserted through the through-hole 103. Furthermore, a measuring hole 丨 丨 c is provided in the cover 11, a measuring hole 41b is provided in the head body 4 丨, a measuring hole 53a is provided in the fixing member 53, and a measuring head is inserted through the measuring holes 11c and 41b. , 53a. Therefore, according to the measuring device 1 00, according to the probe 1 10a, the front end of the probe from the opposing plate 51, the gap 52 between the 51 abuts on the mounting table 20 (upper member 21), the micrometer II 101 m, and If the position of the probe 101a is moved horizontally and the front end of the probe 101a is in contact with the back of the counter plate 51, the degree of the micrometer 101 is measured. The difference between the two degrees is subtracted from the thickness of the counter plate 5 and can be calculated. (Measurement) The interval between the lower surface of the opposed plate 51 and the upper surface of the mounting table 20 (g). 31 200405413 Furthermore, the measuring device ιιο shown in FIG. 13 and FIG. 14 includes: a laser length measuring device for measuring a distance by a triangulation method; and a movable plate holding the laser length measuring device m. 112: A support plate 113 supporting the movable plate 2 and a support post 114 supporting the support plate 113 are selected. A guide rail 115118 is provided on the support plate 113. The slide members 116 and 7 can be moved freely along the guide rail 115 on the guide rail 5. Similarly, the slide 19 can be combined on the guide rail 18 to move freely along the guide rail 118. The movable plate 112 It is placed and fixed on the sliders 116, 117119, and along the arrow η-work
方向移動自如。 再者，可動板112，被線圈彈簧12〇朝箭頭η方向彈 壓，並利用調製彈簧121且透過塊狀件122朝箭頭ζ方向 移動，以藉由操作調製彈簧121來調整雷射測長器iu在 箭頭H-I方向的位置。 再者，在可動板112與支撐板113分別形成量測孔 112a，113a，在蓋體11穿設量測孔Uc，在頭本體41穿設 量測孔41b，在固定構件53穿設量測孔53a。 所以’依據量測裝置1 1 〇，首先，從雷射測長器1 1 1 所發出的雷射光通過量測孔112a，n3a，llc，41b，53a，再 通過對向板51，51之間，到達載置台2 0 (上部構件21)上 面’藉此獲得一量測長度，其次，移動雷射測長器丨丨丄， 以使雷射光到達對向板51之背面，藉此獲得另一量測長 度’從兩量測長度之差值扣除對向板51厚度，便可計算 出（里測）對向板51下面與載置台2 0上面間之間隔（上述 g)。 32 200405413 然後’以在頭本體41全部區域内不致遺漏地進行上述 量測之方式在適當位置穿設上述量測孔llc，41b，53a，邊 在该位置進行上述量測，邊以對向板51下面與載置台2〇 上面間之間隔g成為上述範圍之方式調整各第2支撐機構 90,藉此便可在基板K與對向板51對向的全部區域中， 使其間隔均等。Freely move in directions. In addition, the movable plate 112 is urged by the coil spring 120 in the direction of the arrow η, and uses the modulation spring 121 to move through the block 122 in the direction of the arrow ζ to adjust the laser length measuring device iu by operating the modulation spring 121 Position in the direction of arrow HI. Furthermore, measurement holes 112a and 113a are formed in the movable plate 112 and the support plate 113, a measurement hole Uc is formed in the cover 11, a measurement hole 41b is formed in the head body 41, and a measurement is made in the fixed member 53. Hole 53a. So according to the measuring device 1 1 0, first, the laser light emitted from the laser length measuring device 1 1 1 passes through the measuring holes 112a, n3a, 11c, 41b, 53a, and then passes between the opposing plates 51, 51. , To reach the mounting table 20 (upper member 21) to thereby obtain a measurement length, and secondly, move the laser length measuring device 丨 丨 丄 so that the laser light reaches the back of the facing plate 51 to obtain another Measured length 'subtracts the thickness of the facing plate 51 from the difference between the two measured lengths, and the distance between the bottom of the facing plate 51 and the top of the mounting table 20 can be calculated (the above g). 32 200405413 Then 'perform the above-mentioned measurement holes 11c, 41b, 53a at appropriate positions in such a manner that the above-mentioned measurement is not missed in the entire area of the head body 41, and perform the above-mentioned measurement at this position while facing the plate By adjusting the interval g between the lower surface of 51 and the upper surface of the mounting table 20 so that it is within the above range, each of the second support mechanisms 90 can be adjusted to have a uniform interval in all areas where the substrate K and the opposing plate 51 face each other.
如上述，本發明的臭氧處理裝置乃適用於，對半導 基板或液晶基板等之基板表 ^ ^ ^ 合有臭氧的處理 體而在该基板表面形成氧化膜，或 AA g, /. /對基板表面所形 的虱化Μ進仃改質，或將基 衣面所形成的光阻臈去除。 【圖式簡單說明】 (一）圖式部分 第1圖係本發明較佳實施形態之* 造剖面圖。 六乳處理裝置概略構As described above, the ozone treatment device of the present invention is suitable for forming an oxide film on the surface of the substrate by combining an ozone-treated treatment body on a substrate surface of a semiconductor substrate or a liquid crystal substrate, or AA g, /. / 对The morphology formed on the substrate surface is modified, or the photoresist formed on the base coat surface is removed. [Brief description of the drawings] (I) Schematic part The first figure is a * cross-sectional view of a preferred embodiment of the present invention. Structure of six milk processing device
:3圖係第1圖之Α方向白“ 第4圖係第2支撐機構的吾“ 第5圖係第1圖之B-B方向白 第6圖係第1圖之C方向" :7圖係第5圖之D-D方向* 弟8圖係第5圖之E-E方向& 第9圖係第5圖之E-E方向ό 33 200405413 第1 0圖係另一實施形態之第2懸吊機構的剖面圖。 第11圖係適合用於另一實施形態第2懸吊機構之調整 的量測裝置剖面圖，其為第1 2圖之F-F方向的剖面圖。 4 第1 2圖係第11圖所示量測裝置的俯視圖。 第1 3圖係適合用於另一實施形態第2懸吊機構之調整 的另一量測裝置前視圖，其為第14圖之J方向之前視圖 〇 第14圖係第1 3圖所示量測裝置的俯視圖。 第1 5圖係習知例的臭氧處理概略構造前視圖。 _ (二）元件代表符號 1，200 臭氧處理裝置 10, 201 處理室 11a, lib,33a,42,71a, 103a 貫通孔 11c，41b，53a，112a，113a 量測孔 11,202 蓋體 12 支撐針 15 升降裝置 16 升降桿 17, 31 支撐構件 18 熱反射板 19, 35, 53 固定構件 20,203 載置台 21 上部構件 34 200405413 21a 吸氣孑L 21b，43 連通孔 22 下部構件 23 加熱器 25 支撐裝置 26 第1支撐機構 28 基台 29 抵接構件 30 第2支撐機構 31a 基部 31b 軸部 31c 螺紋 32 螺帽 33, 103, 113 支撐板 34 連結構件 36 安裝構件 37 隔件 38, 102 保持構件 40, 205 處理氣體供應頭 41a 凹槽 41, 206 頭本體 45b 母螺紋 45 固定板 46 臭氧氣體流路: 3 picture is the first direction in the A direction white "4 picture is the second support mechanism of the" "5 picture is the BB direction white in the first picture 6 is the C direction in the first picture ": 7 picture system Direction DD in Fig. 5 * Fig. 8 is the EE direction in Fig. 5 & Fig. 9 is the EE direction in Fig. 5 33 200405413 Fig. 10 is a sectional view of the second suspension mechanism of another embodiment . Fig. 11 is a sectional view of a measuring device suitable for adjustment of a second suspension mechanism according to another embodiment, and is a sectional view in the direction F-F of Fig. 12. 4 Figure 12 is a top view of the measuring device shown in Figure 11. Figure 13 is a front view of another measuring device suitable for the adjustment of the second suspension mechanism of another embodiment, which is a front view in the J direction of Figure 14; Figure 14 is the quantity shown in Figure 13 Top view of the measuring device. Fig. 15 is a front view showing a schematic structure of a conventional ozone treatment. _ (II) Symbols for components 1,200 Ozone treatment device 10, 201 Processing chamber 11a, lib, 33a, 42, 71a, 103a Through holes 11c, 41b, 53a, 112a, 113a Measuring holes 11,202 Cover body 12 Support needle 15 Lifting device 16 Lifting rod 17, 31 Supporting member 18 Heat reflecting plate 19, 35, 53 Fixing member 20, 203 Mounting table 21 Upper member 34 200405413 21a Suction L 21b, 43 Communication hole 22 Lower member 23 Heater 25 Supporting device 26 1 support mechanism 28 abutment 29 abutment member 30 second support mechanism 31a base 31b shaft 31c thread 32 nut 33, 103, 113 support plate 34 connection member 36 mounting member 37 spacer 38, 102 holding member 40, 205 treatment Gas supply head 41a Groove 41, 206 Head body 45b Female thread 45 Fixing plate 46 Ozone gas flow path
35 200405413 47 連接孔 下部開口部 上部開口部 喷嘴 對向板 間隙 臭氧氣體產生裝置 冷卻液循環裝置 冷卻液管 懸吊裝置 第1懸吊機構 安裝構件 墊圈 支撐軸 螺紋 調整螺帽 量測裝置 測微錶 測頭 導件 支撐柱 雷射測長器35 200405413 47 Connection hole lower opening upper opening nozzle facing plate gap ozone gas generating device coolant circulating device cooling liquid pipe suspension device first suspension mechanism mounting member washer support shaft thread adjustment nut measuring device micrometer Probe guide pillar support laser length measuring device
50b 50a 50, 207 51，208 52,209 55 56 57 60 70 71 72 73 73a 74(74a，74b)，84(84a，84b) 100, 110 101 101a 102a 104,114 111 112 可動板 115,118 導軌 36 200405413 116, 117, 119 滑件 120 螺旋彈簧 121 調製彈簧 122 塊狀件 204 升降機構50b 50a 50, 207 51, 208 52, 209 55 56 57 60 70 71 72 73 73a 74 (74a, 74b), 84 (84a, 84b) 100, 110 101 101a 102a 104, 114 111 112 Movable plate 115, 118 Rail 36 200405413 116, 117, 119 Slide 120 Coil spring 121 Modulation spring 122 Block 204 Lifting mechanism
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Claims (1)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002227588A JP2004071761A (en) | 2002-08-05 | 2002-08-05 | Ozone treatment device |
| JP2002250411A JP2004088035A (en) | 2002-08-29 | 2002-08-29 | Ozone treatment device |
| JP2002250322A JP2004088033A (en) | 2002-08-29 | 2002-08-29 | Ozone treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200405413A true TW200405413A (en) | 2004-04-01 |
Family
ID=31499111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92120790A TW200405413A (en) | 2002-08-05 | 2003-07-30 | Ozone processing apparatus |
Country Status (3)
| Country | Link |
|---|---|
| AU (1) | AU2003254785A1 (en) |
| TW (1) | TW200405413A (en) |
| WO (1) | WO2004013906A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113066904A (en) * | 2021-03-31 | 2021-07-02 | 上海钧乾智造科技有限公司 | Ozone oxidation process and ozone oxidation system |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110556A (en) * | 1997-10-17 | 2000-08-29 | Applied Materials, Inc. | Lid assembly for a process chamber employing asymmetric flow geometries |
| JP2001110794A (en) * | 1999-10-06 | 2001-04-20 | Ebara Corp | Thin-film gas phase growing apparatus |
| JP2001279450A (en) * | 2000-03-31 | 2001-10-10 | Hitachi Kokusai Electric Inc | Substrate processing equipment |
| JP2002064090A (en) * | 2000-08-21 | 2002-02-28 | Sumitomo Precision Prod Co Ltd | Film formation treating equipment |
| JP2003092292A (en) * | 2001-09-19 | 2003-03-28 | Sumitomo Precision Prod Co Ltd | Ozone treatment apparatus |
| JP2003092290A (en) * | 2001-09-19 | 2003-03-28 | Sumitomo Precision Prod Co Ltd | Ozone treatment apparatus |
-
2003
- 2003-07-30 AU AU2003254785A patent/AU2003254785A1/en not_active Abandoned
- 2003-07-30 WO PCT/JP2003/009702 patent/WO2004013906A1/en active Application Filing
- 2003-07-30 TW TW92120790A patent/TW200405413A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113066904A (en) * | 2021-03-31 | 2021-07-02 | 上海钧乾智造科技有限公司 | Ozone oxidation process and ozone oxidation system |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003254785A1 (en) | 2004-02-23 |
| WO2004013906A1 (en) | 2004-02-12 |
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