TW200404833A - Dendritic polymer and electronic device element employing the polymer - Google Patents

Dendritic polymer and electronic device element employing the polymer Download PDF

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TW200404833A
TW200404833A TW092123418A TW92123418A TW200404833A TW 200404833 A TW200404833 A TW 200404833A TW 092123418 A TW092123418 A TW 092123418A TW 92123418 A TW92123418 A TW 92123418A TW 200404833 A TW200404833 A TW 200404833A
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dendrimer
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polymer
item
organic
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TW092123418A
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Motohiro Yamahara
Satoru Obara
Kentaro Tada
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Sharp Kk
Toyo Gosei Co Ltd
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114Poly-phenylenevinylene; Derivatives thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/631Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)

Abstract

The invention provides a novel dendritic polymer serving as an organic semiconductor material which has high solubility in organic solvent; which is stable (i.e., is not prone to being affected by external inhibitors such as oxygen and water); and which exhibits isotropic, remarkably high carrier conductivity. The invention also provides electronic device elements requiring carrier conductivity and having remarkably high carrier conductivity through a simple production process. The dendritic polymer having a branching structure including a repeating unit having a branch portion, wherein the polymer has an aromatic amine moiety at an end thereof, and the repeating unit is formed of a phenylenevinylene moiety represented by formula (1): which is repeated once or a plurality of times.

Description

200404833 玖、發明說明: 【發明所屬之技術領域】 本發明關於一種具載體傳導性之新穎的樹枝狀高分子一 樹枝狀或高分支的高分子,以及關於使用該樹枝狀高分子 之電子裝置。本發明之樹枝狀高分子係以相當高效率達到 高載體傳導性,因而尤其在需要載體傳導性之裝置中發現 利用性;例如開關元件,如有機電晶體(有機F E T s、有機 TFTs等)、太陽能電池及有機EL裝置。 【先前技術】 自1970年代末期以來,導電有機高分子已成為科學及 技術上令人感興趣的事物。以相當新技術為基礎之高分子 展現了金屬的電子及磁性性質以及習知有機高分子的物理 及機械性質。已知的傳導性有機高分子包含聚(對-伸苯基) 化合物、聚(對-伸苯基伸乙烯基)化合物、聚苯胺、聚噻吩、 聚口比口各、聚吖嗉、聚咬喃、多紛(ρ ο 1 y c e η 〇 p h e n e s )、聚(對 -伸苯基硫)化合物及其混合物、其與另一高分子之摻合物 以及上述高分子之單體的共聚物。此等傳導性有機高分子 係為透過摻雜(由諸如氧化反應、還原反應或質子化反應等 反應造成)而展現導電性之共軛系統高分子。 近年來,已致力於自此等傳導性有機高分子製造有機電 致發光裝置(有機EL、0LED)之發光元件及場效電晶體(有 機F E T、有機T F T )之活性元件。現行的實施方式係使用昂 貴的電漿CVD裝置形成非結晶矽TFT或多晶矽之絕緣層或 半導體層以及使用昂貴的濺鍍裝置形成電極。此外,可於 6 312/發明說明書(補件)/92-11 /92123418 200404833 高達2 3 0至3 5 0 °C之溫度下藉C V D進行膜之形成,且必須 經常地進行維修操作(例如清潔),藉以降低處理量。相較 之下,用於製造有機FETs或類似裝置之塗覆裝置或喷墨裝 置較C V D裝置及濺鍍裝置便宜。此外,可於較低溫進行膜 形成,且裝置維修較不麻煩。因此,當顯示裝置,例如液 晶顯示器及有機E L製自有機F E T時,可預期明顯的成本減 少 〇 典型的EL裝置包含由例如玻璃材料製成的透明基板、 電洞注射層、電洞傳輸層、發光層、電子傳輸層及金屬電 極。三層分開的層,即電洞傳輸層、發光層、電子傳輸層, 可形成單一電洞傳輸及發光層或形成單一電子傳輸及發光 層。其特徵係揭示於曰本專利特許公開申請案(k 〇 k a i )第 7 - 1 2 6 6 1 6、8-18125、1 Ο _ 9 2 5 7 6號等。然而,諸如使用壽 命等問題仍保持未解(就有機E L裝置而言),且有關改良之 研究仍在進行中。 典型的有機T F T s包含由例如玻璃材料製成的透明基 板、閘極基板、閘極絕緣膜、源極、汲極及有機半導體膜。 藉修飾閘極電壓,於閘極絕緣層與有機半導體膜間界面之 電荷成為過度或不足,因此於源極與汲極間流動之汲極電 流係經由有機半導體膜改變,藉以進行開關。 曰本專利特許公開申請案(kokai )第6 3 - 0 7 6 3 8號揭示有 機T F T係製自聚噻吩或適合作為上述有機半導體膜之聚噻 吩衍生物。自並五苯(pentacene)製備有機TFT之方法揭示 於 Yen-Yi Lin, David J. Gundlach, Shelby F. Nelson 7 312/發明說明書(補件)/92-11 /92123418 200404833 及 Tomas N. Jackson , IEEE Transaction and Electron Device,第 44 冊,No. 8,第 1,325 頁(1997)。 然而,使用並五苯產生問題。舉例來說,可透過氣體沉 積法進行膜形成,且必須提高結晶度以增進裝置性質。另 一可能方法為使用可溶性並五苯衍生物以增進可能性。然 而,於此例中,此等性質仍無法令人滿意。 由聚嚷吩、聚嚷吩衍生物或σ塞吩低聚物形成之有機半導 體的應用性及發展係在進行中,因為有機半導體具有極佳 的可成型性,例如容易經由電解聚合反應、溶液塗覆或類 似方法形成為薄膜。然而,於此例中,此等性質仍無法令 人滿意。 同時,近年來,高分支高分子材料(於廣義上為樹枝狀 高分子及高分支高分子)已成為令人感興趣的事物。樹枝狀 高分子及高分支高分子之特性包含非結晶性、於有機溶劑 中之溶解度及可引入官能基之大量分支末端之存在。L. L. Miller 等人於 J. Am. Chem. Soc. 1997, 119, 1,005 揭 示一種於分支末端具1,4, 5, 8 -萘四羧酸-二醯亞胺基殘基 (係結合至四級銨鹽)之聚醯胺樹枝狀高分子具有等向電子 傳導性(亦稱為”可運輸性”),且傳導性係由π -電子(由分支 末端部分之空間重疊所產生)交互作用提供。日本專利特許 公開申請案(k 〇 k a i )第2 0 0 0 - 3 3 6 1 7 1號揭示一種樹枝狀高 分子,其含有具電洞傳導部分之樹突(於分支端)且不含具 羰基及苯環之π -電子共軛系統,以及揭示使用此樹枝狀高 分子之光電轉化裝置。 8 312/發明說明書(補件)/92-11 /92123418 200404833 已研究應用具有展現高螢光產率伸苯基伸 之樹枝狀高分子於發光元件。發表之刊物(令 Halim,Jonathan N. G . Pillow,If o r D . W. L. Burn,Adv. Mater. 1 9 9 9,11,No. 5, Lupton,Ifor D. W. Samuel,Richard Beav L. Burn,Heinz Bassler,A d v. Mater. 2 0 0 1 2 5 8 ; W0 9 9 2 1 9 3 5 ;及 W0 0 1 5 9 0 3 0 )揭示引入 基基團之伸苯基伸乙烯基為基礎的樹枝狀高 樹枝狀高分子之溶解度。此等刊物揭示可經 末端取代基而提供溶解度及可加工性予樹枝 未提到引入末端載體傳導性官能基團。Org. 第 3 卷,No. 17 , 2645 (Jose L. Segura , R Nazario Martin,及 Dirk M. Guldi)揭示具 基團且展現增加的溶解度(經由引入長鏈烧;i 基伸乙烯基為基礎的樹枝狀高分子。 其間,除了高分子外,具有以芳基胺部分 伸乙烯基部分之低分子量化合物係用於有機 示於日本專利特許公開申請案(k 〇 k a i )第0 3 -06-271848號及日本專利第3093796B號等) 然而,於使用半導體或傳導性高分子(例女 之功能元件中,上述有機半導體之電荷傳導 鏈定向出現,且取決於分子結構改變。此外 統高分子有受氧及水影響之趨向,因而容易 此,習知的有機FET元件具有缺點,即不良 312/發明說明書(補件)/92-11 /92123418 乙烯基部分 丨J 如 Μ 〇 u n i r Samuel , Paul 373; John M. ington, Paul ,1 3,No. 4, 具末端第三丁 分子,俾增進 由引入適當的 狀高分子,但 Lett. 2001, a f a e 1 Gomez, 末端二丁基胺 k基團)之伸苯 封端之伸苯基 EL元件中(揭 -296595 及 〇 3共輛高分子) 性係沿著分子 ,此等共軛系 造成惡化。因 的安定性及電 9 200404833 氣性質以及短暫的使用壽命。此外,半導體或傳導性高分 子(例如共軛高分子)通常是堅硬的且無法溶解或熔化。其 大部分無法溶解於溶劑中。為了達成此目的,係使用引入 側鏈於此等高分子中之衍生物及其低聚物(請參見日本專 利特許公開申請案(kokai )第4- 1 3 3 3 5 1、6 3 - 0 7 6 3 7 8、 5 - 1 1 0 0 6 9號等)。然而,仍產生問題,舉例來說,當引入 側鏈時,玻璃轉變溫度出現,且誘發出促成微布朗運動之 熱變色性(thermochromism),因而造成依賴溫度變化之特 性。使用募聚物可能使可靠度下降。甚至當使用引入側鏈 之高分子時,無法達到令人滿意的遷移率。因此,必須提 高聚合度,或可藉使用定向膜(例如日本專利特許公開申請 案(kokai )第7 - 2 0 6 5 9 9號)增加傳導性有機化合物定向程 度。 於沒有將烷基基團引入上述具伸苯基伸乙烯基部分之 樹枝狀高分子的末端之情形中,由於此等樹枝狀高分子在 有機溶劑中之不良溶解度,故樹枝狀高分子之溶液不易製 得。另一問題為合成或純化較高代的樹枝狀高分子時之困 難性。此時,當長鏈烷基基團引入樹枝狀高分子之末端時, 將產生類似上述具側鏈之高分子衍生物中遇到的問題,即 生成的高分子具有玻璃轉變溫度。當使用低分子量化合物 時,具依賴溫度的物理性質之問題產生,因為其玻璃轉變 溫度低於高分子之玻璃轉變溫度。再者,當使用此等或化 合物作為有機半導體材料時,載體遷移率達到不適合實際 應用之低水平。 10 31W發明說明書(補件)/92-11/92123418 200404833 【發明内容】 為了解決上述習知技術中產生之問題,因而提出本發 明。因此,本發明之目的係提供一種適合作為有機半導體 材料之樹枝狀高分子,其在有機溶劑中具高溶解度;其是 安定的(即不易受外來抑制劑例如氧及水之影響);且及展 現等向、非常高的載體傳導性。本發明之另一目的係提供 一種使用該樹枝狀高分子之電子裝置。 本案發明人已進行廣泛的研究,俾解決上述問題,且已 發現透過引入芳族胺部分至樹枝狀高分子(由伸苯基伸乙 烯基作為樹枝狀結構而形成)末端,高分子在有機溶劑中之 溶解度增加;電洞傳導性係提供於高分子末端;且高分子 分子内所含之伸苯基伸乙烯基主鏈係受到作為分子表面之 芳族胺主鏈保護,使得得以供應在空氣中安定且展現等 向、非常高的載體傳導性之有機半導體材料。本發明已基 於此發現而實現。 本發明欲解決上述問題之第一方式係關於一種具分支 結構之樹枝狀高分子,係包含具分支部分之重複單元,其 特徵在於該高分子於其末端具芳族胺部分,且該重複單元 係由以式(1)表示之伸苯基伸乙烯基部分形成:200404833 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to a novel dendrimer with a carrier conductivity, a dendrimer or a highly branched polymer, and an electronic device using the dendrimer. The dendrimer of the present invention achieves high carrier conductivity with a relatively high efficiency, so it is particularly useful in devices requiring carrier conductivity; for example, switching elements such as electromechanical crystals (organic FETs, organic TFTs, etc.), Solar cells and organic EL devices. [Previous technology] Since the late 1970s, conductive organic polymers have become scientifically and technically interesting. Polymers based on fairly new technologies exhibit the electronic and magnetic properties of metals as well as the physical and mechanical properties of conventional organic polymers. Known conductive organic polymers include poly (p-phenylene) compounds, poly (p-phenylene vinylene) compounds, polyaniline, polythiophene, polyisocyanate, polyacrylidine, polyoctane , Poly (p ο 1 yce η 〇phenes), poly (p-phenylene sulfide) compounds and mixtures thereof, blends thereof with another polymer, and copolymers of monomers of the above polymers. These conductive organic polymers are conjugated system polymers that exhibit conductivity through doping (caused by reactions such as oxidation, reduction, or protonation reactions). In recent years, efforts have been made to produce light-emitting elements of organic electroluminescence devices (organic EL, OLED) and field-effect transistors (organic F E T, organic T F T) from these conductive organic polymers. The current embodiment uses an expensive plasma CVD device to form an insulating layer or a semiconductor layer of amorphous silicon TFT or polycrystalline silicon and an electrode using an expensive sputtering device. In addition, film formation can be performed by CVD at 6 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833 up to 2 30 to 3 50 ° C, and maintenance operations must be performed frequently (such as cleaning ) To reduce throughput. In comparison, coating devices or inkjet devices for manufacturing organic FETs or similar devices are cheaper than CVD devices and sputtering devices. In addition, film formation can be performed at a lower temperature, and device maintenance is less troublesome. Therefore, when a display device such as a liquid crystal display and an organic EL is made of an organic FET, a significant cost reduction can be expected. A typical EL device includes a transparent substrate made of, for example, a glass material, a hole injection layer, a hole transmission layer, Light-emitting layer, electron-transport layer, and metal electrode. Three separate layers, namely a hole transport layer, a light emitting layer, and an electron transport layer, can form a single hole transport and light emitting layer or a single electron transport and light emitting layer. Its characteristics are disclosed in Japanese Patent Application Publication No. (kokai) Nos. 7-1 2 6 6 1 6, 8-18125, 1 0 _ 9 2 5 7 6 and the like. However, issues such as lifetime are still unsolved (in the case of organic EL devices), and research on improvements is ongoing. A typical organic T F T s includes a transparent substrate made of, for example, a glass material, a gate substrate, a gate insulating film, a source, a drain, and an organic semiconductor film. By modifying the gate voltage, the charge at the interface between the gate insulating layer and the organic semiconductor film becomes excessive or insufficient. Therefore, the drain current flowing between the source and the drain is changed through the organic semiconductor film to perform switching. Japanese Patent Application Laid-Open (kokai) No. 6 3-0 7 6 3 8 discloses organic TF based on polythiophene or a polythiophene derivative suitable as the organic semiconductor film. Methods for preparing organic TFTs from pentacene are disclosed in Yen-Yi Lin, David J. Gundlach, Shelby F. Nelson 7 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833 and Tomas N. Jackson, IEEE Transaction and Electron Device, Volume 44, No. 8, page 1,325 (1997). However, the use of pentacene creates problems. For example, film formation can be performed by a gas deposition method, and the degree of crystallinity must be increased to improve device properties. Another possibility is to use soluble pentacene derivatives to increase the possibilities. However, in this case, these properties are still unsatisfactory. The applicability and development of organic semiconductors formed from polyfluorene, polyfluorene derivatives, or sigmathiophene oligomers are in progress, because organic semiconductors have excellent moldability, such as easy to undergo electrolytic polymerization, Coating or the like is formed into a thin film. However, in this case, these properties are still not satisfactory. At the same time, in recent years, highly branched polymer materials (dendrimers and high branched polymers in a broad sense) have become interesting. The characteristics of dendrimers and highly branched polymers include non-crystallinity, solubility in organic solvents, and the presence of a large number of branched ends that can introduce functional groups. LL Miller et al., J. Am. Chem. Soc. 1997, 119, 1,005 disclose a branched terminal having 1,4, 5, 8-naphthalenetetracarboxylic acid-diamidino group residues (bound to Polyammonium dendrimers with quaternary ammonium salt) have isotropic electron conductivity (also known as "transportability"), and the conductivity is interacted by π-electrons (generated by the spatial overlap of the end portions of the branches) Function provided. Japanese Patent Laid-open Application (kokai) No. 20000-3 3 6 1 7 1 discloses a dendrimer, which contains a dendrite (on a branch end) with a hole conducting portion and no A π-electron conjugate system of a carbonyl group and a benzene ring, and a photoelectric conversion device using the dendrimer is disclosed. 8 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833 It has been studied to apply a dendrimer having a high fluorescence yield to a light-emitting element. Publications (Let Halim, Jonathan N. G. Pillow, If or D. WL Burn, Adv. Mater. 1 9 9 9, 11, No. 5, Lupton, Ifor DW Samuel, Richard Beav L. Burn, Heinz Bassler , A d v. Mater. 2 0 0 1 2 5 8; W 0 9 9 2 1 9 3 5; and W 0 1 5 9 0 3 0) Reveal the introduction of phenylene and vinylene-based dendrimers High solubility of dendrimer. These publications disclose that solubility and processability can be provided to the dendrimer through terminal substituents. The introduction of terminal carrier conductive functional groups is not mentioned. Org. Volume 3, No. 17, 2645 (Jose L. Segura, R Nazario Martin, and Dirk M. Guldi) Reveals Groups and Shows Increased Solubility (via Introduction of Long-Chain Burning; i-based Vinyl-Based In the meantime, in addition to polymers, low molecular weight compounds having an arylamine moiety and a vinyl moiety are used organically as shown in Japanese Patent Laid-Open Application (kokai) No. 0 3 -06-271848 No. and Japanese Patent No. 3093796B, etc.) However, in the use of semiconductors or conductive polymers (such as female functional elements, the charge conduction chain of the above organic semiconductors appears oriented and depends on the molecular structure change. In addition, traditional polymers have been The tendency of the influence of oxygen and water makes it easy to do so. The conventional organic FET element has disadvantages, namely, bad 312 / Invention Specification (Supplement) / 92-11 / 92123418 vinyl part 丨 J such as Μ〇unir Samuel, Paul 373; John M. ington, Paul, 1 3, No. 4, with a tertiary tertiary molecule, which is enhanced by the introduction of a suitable polymer, but Lett. 2001, afae 1 Gomez, a terminal dibutylamine k group In the capped phenylene EL element (Jie-296595 and 03 polymer), the properties are along the molecule, and these conjugated systems cause deterioration. Due to its stability and electrical properties, it has a short life span. In addition, semiconductors or conductive polymers (such as conjugated polymers) are often hard and cannot be dissolved or melted. Most of them cannot be dissolved in solvents. To achieve this, derivatives and oligomers introduced into these polymers with side chains are used (see Japanese Patent Laid-Open Application (kokai) No. 4- 1 3 3 3 5 1, 6 3-0 7 6 3 7 8, 5-1 1 0 0 6 9 etc.). However, problems still arise. For example, when a side chain is introduced, a glass transition temperature occurs and induces thermochromism that contributes to micro-Brownian motion, thereby causing a characteristic that depends on temperature changes. The use of agglomerates may reduce reliability. Even when using a polymer introduced with a side chain, satisfactory mobility cannot be achieved. Therefore, the degree of polymerization must be increased, or the degree of orientation of conductive organic compounds can be increased by using an alignment film (for example, Japanese Patent Laid-Open Application (kokai) No. 7-2 0 6 5 9 9). In the case where an alkyl group is not introduced into the end of the dendrimer having the phenylene and vinylidene part, the solution of the dendrimer is not easy due to the poor solubility of these dendrimers in an organic solvent. be made of. Another problem is the difficulty in synthesizing or purifying higher generation dendrimers. At this time, when the long-chain alkyl group is introduced into the end of the dendrimer, a problem similar to that of the above-mentioned polymer derivative with a side chain will be generated, that is, the resulting polymer has a glass transition temperature. When low molecular weight compounds are used, problems with temperature-dependent physical properties arise because their glass transition temperatures are lower than the glass transition temperature of polymers. Furthermore, when these or compounds are used as the organic semiconductor material, the carrier mobility reaches a low level unsuitable for practical use. 10 31W Invention Specification (Supplement) / 92-11 / 92123418 200404833 [Summary of the Invention] In order to solve the problems generated in the conventional techniques described above, the present invention is proposed. Therefore, the object of the present invention is to provide a dendrimer suitable as an organic semiconductor material, which has high solubility in organic solvents; it is stable (that is, it is not easily affected by external inhibitors such as oxygen and water); and Exhibits isotropic, very high carrier conductivity. Another object of the present invention is to provide an electronic device using the dendrimer. The inventors of the present case have conducted extensive research to solve the above problems, and have found that by introducing an aromatic amine moiety to the end of a dendrimer (which is formed by phenylene and vinylidene as a dendritic structure), the polymer is in an organic solvent. Increased solubility; hole conductivity is provided at the end of the polymer; and the main chain of phenylene and vinylene contained in the polymer molecule is protected by the aromatic amine main chain as the molecular surface, making it stable in the air and An organic semiconductor material that exhibits isotropic, very high carrier conductivity. The present invention has been achieved based on this finding. A first aspect of the present invention to solve the above-mentioned problem is a dendrimer having a branched structure, which comprises a repeating unit having a branching portion, which is characterized in that the polymer has an aromatic amine portion at its terminal, and the repeating unit It is formed by a phenylene vinyl group represented by formula (1):

312/發明說明書(補件)/92-11 /92123418 11 200404833 其係重複一次或複數次。 本發明之第二方式係關於一種於第一方式中提到之樹 枝狀高分子,其中該芳族胺部分包含至少一種以式(2 )表示 之物質:312 / Description of the Invention (Supplement) / 92-11 / 92123418 11 200404833 It is repeated one or more times. The second aspect of the present invention relates to a tree-like polymer described in the first aspect, wherein the aromatic amine moiety includes at least one substance represented by formula (2):

其中Arx代表單鍵或二價芳族基團,且八1^及Ar2中之每一 者代表單價芳族基團。 本發明之第三方式係關於一種於第二方式中提到之樹 枝狀高分子,其中於該芳族胺中所含之該二價芳族基團係 為伸苯基基團或伸萘基基團,且該單價芳族基團係獨立地 選自以式(3)表示之基團:Wherein Arx represents a single bond or a divalent aromatic group, and each of 11 and Ar2 represents a monovalent aromatic group. The third aspect of the present invention relates to a dendrimer mentioned in the second aspect, wherein the divalent aromatic group contained in the aromatic amine is a phenylene group or a naphthyl group And the monovalent aromatic group is independently selected from the group represented by formula (3):

其中1?!及R2中之每一者係獨立地選自氫原子、C1-C4烷基 基團及C1-C4烷氧基基團。 本發明之第四方式係關於一種於第一至第三方式任一 者中提到之樹枝狀高分子,其中適合作為該分支結構起始 點之該重複單元係進一步結合於適合作為核心之中心部 分0 12 312/發明說明書(補件)/92-11 /92123418 200404833 本發明之第五方式係關於一種於第四方式中提到之樹 枝狀高分子,其中該核心係選自以式(4 )表示之部分:Each of 1 ?! and R2 is independently selected from a hydrogen atom, a C1-C4 alkyl group, and a C1-C4 alkoxy group. The fourth aspect of the present invention relates to a dendrimer mentioned in any one of the first to third aspects, wherein the repeating unit suitable as a starting point of the branch structure is further combined with a center suitable as a core. Part 0 12 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833 The fifth aspect of the present invention relates to a dendrimer mentioned in the fourth aspect, wherein the core is selected from the group consisting of ) Part:

本發明之第六方式係關於一種於第一至第五方式任一 者中提到之樹枝狀高分子,其係為樹枝狀分子。 本發明之第七方式係關於一種於第六方式中提到之樹 枝狀高分子,其中該樹枝狀分子為第二代或較高代者。 本發明之第八方式係關於一種電子裝置元件,其特徵在 於使用於第一至第七方式任一者中提到之樹枝狀高分子。 本發明之第九方式係關於一種於第八方式中提到電子 裝置元件,其係為電荷傳輸裝置元件。 本發明之第十方式係關於一種於第八方式中提到電子 裝置元件,其係為開關電晶體元件。 本發明之第十一方式係關於一種於第八方式中提到電 子裝置元件,其係為發光裝置元件。 本發明之第十二方式係關於一種於第八方式中提到電 子裝置元件,其係為光電轉換裝置元件。 【實施方式】 以下將詳細地說明進行本發明之方式。 13 312/發明說明書(補件)/92-11 /92123418 200404833 於本發明中,「樹枝狀高分子」一詞於概念上代表包含 一般定義的樹枝狀分子及高分支高分子之高分子物質。因 此,樹枝狀高分子涵蓋具有上述以式〇)表示的結構重複單 元(即樹枝狀結構單元)重複一或多次(即樹枝狀分子含有 二或更多個重複單元)之結構之任一高分子。特別地,含上 述以式(1)表示的結構重複單元之結構,即含有已重複之重 複單體之結構以形成分歧結構之結構,稱為”分支結構”。 樹枝狀分子及高分支高分子通常係以以下結構式表 示。如式中所示,樹枝狀分子具有規則的重複分支單元, 而高分支高分子具有不規則的重複分支單元。此等高分子 可能具有其中高分子鏈自一焦點樹枝狀分支之結構,或具 有其中高分子鏈輻射自複數個鏈接於多官能分子(作為核 心)之焦點之結構。雖然亦可接受此等物質之其他定義,但 在其他情形中,本發明之樹枝狀高分子涵蓋具規則重複分 支結構之樹枝狀高分子及具不規則重複分支結構者,其中 此兩種樹枝狀高分子可能具有樹枝狀分支結構或放射狀分 支結構。 ί艮據一般接受的定義,當樹枝狀結構單元自其前一樹枝 狀結構單元延伸為其精確的複製物時,單元延伸代表接續 「世代(g e n e r a t i ο η )」。應注意到,根據本發明「樹枝狀高 分子」之定義涵蓋具有其中彼此具相同基礎結構之每一彼 此類似的樹枝狀結構單元之結構重複至少一次者亦包含在 本發明之範圍内。 關於樹枝狀高分子之概念、樹枝狀分子、高分支高分子 14 312/發明說明書(補件)/92-11 /92123418 200404833 等之概念係揭示於例如M a s a a k i K A Κ I Μ 0 Τ 0,C h e m i s t r y, 第50冊,第608頁(1995)及Kobunshi (高高分子,日本), 第4 7冊,第8 0 4頁(1 9 9 8 ),且此等刊物可參照且合併於本 案以供參考。然而,於此等刊物中之說明不應視為本發明 受其限制。 樹枝狀分子 高分支聚合物The sixth aspect of the present invention relates to a dendrimer mentioned in any one of the first to fifth aspects, which is a dendrimer. The seventh aspect of the present invention relates to a tree dendrimer mentioned in the sixth aspect, wherein the dendrimer is a second or higher generation. An eighth aspect of the present invention relates to an electronic device element characterized in that it is used for the dendrimer mentioned in any one of the first to seventh aspects. A ninth aspect of the present invention relates to an electronic device element mentioned in the eighth aspect, which is a charge transfer device element. A tenth aspect of the present invention relates to an electronic device element mentioned in the eighth aspect, which is a switching transistor element. An eleventh aspect of the present invention relates to an electronic device element mentioned in the eighth aspect, which is a light emitting device element. A twelfth aspect of the present invention relates to an electronic device element mentioned in the eighth aspect, which is a photoelectric conversion device element. [Embodiment] A mode for carrying out the present invention will be described in detail below. 13 312 / Description of the Invention (Supplements) / 92-11 / 92123418 200404833 In the present invention, the term "dendrimer" conceptually represents a polymer substance including a generally defined dendrimer and a highly branched polymer. Therefore, a dendrimer encompasses any one of the structures having the structural repeating unit (ie, dendritic structural unit) represented by the above formula (0) repeating one or more times (ie, the dendrimer contains two or more repeating units). molecule. In particular, a structure containing the above-mentioned structural repeating unit represented by the formula (1), that is, a structure containing a repeated repeating monomer to form a branched structure is called a "branched structure". Dendrimers and highly branched polymers are generally represented by the following structural formulas. As shown in the formula, dendrimers have regular repeating branch units, while highly branched polymers have irregular repeating branch units. These polymers may have a structure in which the polymer chain branches from a focal point, or a structure in which the polymer chain radiates from a plurality of focal points linked to a multifunctional molecule as a core. Although other definitions of these substances are also acceptable, in other cases, the dendrimers of the present invention include dendrimers with regular repeating branch structures and those with irregular repeating branch structures, of which these two dendrimers The polymer may have a dendritic branch structure or a radial branch structure. According to the generally accepted definition, when a dendritic structural unit extends from its previous dendritic structural unit to its exact replica, the unit extension represents a continuation "g e n e r a t i ο η". It should be noted that it is within the scope of the present invention that the definition of "dendrimer" according to the present invention encompasses the repeating of the structure having each of the similar similar dendritic units having the same basic structure with each other at least once. The concepts of dendrimers, dendrimers, high-branched polymers 14 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833 etc. are disclosed in, for example, Masaaki KA Κ I Μ 0 Τ 0, C hemistry, volume 50, page 608 (1995) and Kobunshi (high polymer, Japan), volume 47, page 804 (19 9 8), and these publications can be referred to and incorporated in this case to for reference. However, the descriptions in these publications should not be construed as limiting the invention. Dendrimer

312/發明說明書(補件)/92-11 /92123418 15 200404833 本發明之樹枝狀高分子之結構上特徵在於樹枝狀結構 單元係由以上述式(1)表示之伸苯基伸乙烯基部分形成;單 一物質之樹枝狀結構單元係結合於苯環之結合手作為分支 部分,樹枝狀結構單元係重複一次或多次;且樹枝狀高分 子之末端係由芳族胺部分形成。此中所用之「樹枝狀結構 單元重複一次之結構」代表由下式括弧内結構表示之單元。312 / Description of the Invention (Supplement) / 92-11 / 92123418 15 200404833 The dendrimer of the present invention is structurally characterized in that the dendrimer is formed by a phenylene vinyl group represented by the above formula (1); The dendritic structural unit of a single substance is bound to a benzene ring as a branching part, and the dendritic structural unit is repeated one or more times; and the end of the dendrimer is formed by an aromatic amine moiety. The "structure in which the dendritic structure unit is repeated once" used herein represents the unit represented by the structure within the parentheses of the following formula.

此單元稱為「第一代樹突」。因此,當適合作為末端部 分之芳族胺部分結合於第一代樹突分支部分之結合手時, 或當相反側上之結合手亦結合於核心時,第一代樹枝狀高 分子產生。 當適合作為樹突焦點之重複單元(即乙烯基基團)由另 一部分取代時,此結構係由下式表示:This unit is called the "first generation dendrite". Therefore, the first generation dendrimer is produced when the aromatic amine moiety suitable as the terminal part is bound to the binding hand of the first-generation dendritic branch part, or when the binding hand on the opposite side is also bound to the core. When a repeating unit (ie, a vinyl group) suitable as a focal point of a dendrite is replaced by another part, this structure is represented by the following formula:

其中Y代表單價取代基,例如氫原子、鹵原子或醛基團。 16 312/發明說明書(補件)/92-11 /92123418 200404833 於本發明中,此結構亦稱為「第一代樹突」。 其中具相同結構的樹枝狀單元接續地鏈接於第一代樹 突分支部分的結合手之類似結構稱為「第二代樹突」。依類 似方式,生成第η代樹突。此等在末端具芳族胺部分之樹 突或所欲取代基結合於其末端或焦點之樹突稱為「具樹枝 狀分支結構之樹枝狀分子或高分支高分子」。當複數種樹枝 狀分支的樹枝狀分子或高分支高分子(彼此相同或相異)以 次單元結合於多價核心時,所形成的樹枝狀高分子稱為「具 放射狀分支結構之樹枝狀分子或高分支高分子」。 於本發明中,其中第η代樹突鏈接於m價(m為整數2或 更多)核心之樹枝狀高分子係定義為第η代,m -分支的樹枝 狀分子。特別地,其中第η代樹突鏈接於m價(m為整數2 或更多)苯核心之樹枝狀高分子不僅定義為第η代,m -分支 的樹枝狀分子且亦定義為(η + 1 )代樹枝狀分子。其中第一代 樹突鏈接於核心之樹枝狀分子的實例包含以下式代表者。Where Y represents a monovalent substituent such as a hydrogen atom, a halogen atom or an aldehyde group. 16 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833 In the present invention, this structure is also called "first generation dendrite". The similar structure in which the dendritic units with the same structure are successively linked to the joints of the branches of the first-generation dendrites is called "second-generation dendrites". In a similar manner, n-th generation dendrites are generated. Such dendrites having an aromatic amine moiety at the end or dendrites whose desired substituents are bound to their ends or focal points are referred to as "dendritic or highly branched polymers with dendritic branch structures". When a plurality of dendritic branches or high branching polymers (identical to or different from each other) are bound to a multivalent core by subunits, the resulting dendrimers are called "dendritic branches with radial branches" Molecule or highly branched polymer. " In the present invention, a dendrimer system in which the n-th generation dendrite is linked to an m-valent (m is an integer of 2 or more) core is defined as the n-th generation, m-branched dendrimer. In particular, dendrimers in which the n-th dendrite is linked to a benzene core of m valence (m is an integer of 2 or more) are not only defined as the n-th, m-branched dendrimer but also defined as 1) Generation of dendrimers. Examples of dendrimers in which the first generation of dendrites are linked to the core include a representative of the following formula.

第一代樹突部分 核心:四價蒽部分核心:三價苯部分The first generation of dendritic part Core: Tetravalent anthracene part Core: Trivalent benzene part

第一代,4-分支樹枝狀分子 第一代,3-分支樹枝狀分子 或第二代樹枝狀分子 17 312/發明說明書(補件)/92-11 /92123418 200404833 特別地,其中第一代樹突鏈接於四價蔥核心之樹枝狀高 分子係定義為第一代,4 -分支的樹枝狀分子,且其中類似 的第一代樹突鏈接於三價苯核心之樹枝狀高分子係定義為 第一代,3 -分支的樹枝狀高分子或第二代樹枝狀分子。 本發明之樹枝狀高分子的特徵在於該高分子係於其末 端具有芳族胺部分且具有由伸苯基伸乙婦基形成之樹枝狀 重複單元。因此,高分子在有機溶劑中之溶解度增加;電 洞傳導性係提供於高分子末端;且高分子分子内所含之伸 苯基伸乙烯基主鏈係受到作為分子表面之芳族胺主鏈保 護。因此,得以供應在空氣中安定且展現等向及非常高的 載體傳導性之有機半導體材料。如上述,具大量分支之本 發明樹枝狀高分子提供大量分支末端。透過末端之使用, 可提高载體數。再者,由於樹枝狀高分子提供大量用於載 體傳導之路徑,載體遷移率可有效地提高,而不需定向分 子及提高結晶度(此已針對習用的共軛高分子及低分子有 機半導體材料進行)。由於非平面三級芳族胺部分係引入高 分子末端,故高分子變得較僅具伸苯基伸乙烯基部分之高 分子更具非結晶性、可形成薄膜(無斷裂)以及為安定形式 (無結晶)。 關於本發明樹枝狀高分子之結構沒有特別限制,只要高 分子具樹枝狀結構且樹枝狀分子未必具完全整齊的分支結 構即可。然而,當本發明之樹枝狀高分子為樹枝狀分子時, 樹枝狀高分子較佳為第二代或較高代者,俾達到高載體傳 導率。「樹枝狀高分子之世代」一詞代表上述表達方式。代 18 312/發明說明書(補件)/92-11 /92123418 200404833 表包含具較大或長中心部分者之樹枝狀高分子世代數目通 常為1至1 0。然而,基於載體傳導率、末端部分之空間密 度及合成容易性等觀點,此數目較佳為2至8,更佳為2 至7,最佳為2至5。 對於本發明樹枝狀高分子之結構沒有特別限制,只要高 分子具有由上述式(1 )表示之伸苯基伸乙烯基形成之樹枝 狀重複單元且於其末端具芳族胺部分即可。 此中所用之「芳族胺部分」一詞代表具有芳族基團替代 胺基基團的氫原子之部分或含有二價芳族基團之部分(於 此部分之結合手處)。芳族胺部分可於連接於樹枝狀重複單 元之側具烴基團。於此例中,舉例來說,芳族胺部分係透 過含二價芳族基團之有機基團而鏈接於樹枝狀重複部分。 特別地,二或更多種此等芳族胺部分可存在於高分子末端 上。於此例中,芳族胺部分可直接地結合於樹枝狀重複單 元或可間接地透過另一取代基(較佳為芳族基團)而結合於 重複單元。 芳族胺部分較佳包含以上述式(2 )代表之部分。於式(2 ) 中,Arx代表單鍵或二價芳族基團,且An* Ar2中之每一 者代表單價芳族基團。單鍵或二價芳族基團之實例包含經 取代或未經取代之芳族烴基團、芳族雜環基團、稠合的多 環芳族烴基團、稠合的雜環芳族基團以及透過此等基團環 稠合作用之單鍵或二價芳族基團。舉例來說,單鍵或二價 芳族基團較佳具5 0個碳原子(或更少),且其中可含雜原 子,例如0、Ν、S、Ρ、Β或S i,或除了未經取代的結構外 19 312/發明說明書(補件)/92-11 /92123418 200404833 可具取代基,例如烧基基團、烧氧基基團、經基基團、魏 基基團、醯基基團、硝基基團、氰基基團或鹵素(例如氟、 氯、溴或碘)原子。特例包含(但不限於)苯、萘、蔥、並四 苯(naphthacene)、並五苯、並六苯、菲、葩(phenalene)、 芘、l(chrysene)、苯并 S 、苣(perylene)、聯三伸苯、 苛(c 〇 r ο n e n e )、茜、萘并;I、、聯三伸萘、莪、吩嗔、聯苯、 聯三苯、聯四苯、聯五苯、聯六苯、聯七苯、苯基蔥、苯 基萘、二苯基蔥、聯伸苯、聯伸萘、苐、烯萘、二苯并 苣、疗、並環戊二豨、兹稀菲、苟7干、瓦稀蔥、聯四伸苯、 芙、奠、環辛四婦、八螢稀(octarene)、紅螢稀(rubrene)、 σ塞吩、吱喃、吼洛、石夕°各(s i 1 ο 1 e )、,峻、嚷嗤、咪嗤、 口比峻、吱喃烧(f u r a z a n e )、二嗤、嚷二〇坐、吼〇定、硫代 旅喃、嘧啶、吼哜、嗒畊、三嗉、苯并嗔吩、苯并呋喃、 苯并矽咯、吲哚、苯并唑、苯并噻唑、苯并咪唑、嗜啉、 硫代克烯、喳唑啉、咔唑、二苯并矽咯、二苯并呋喃、二 苯并噻吩、啡啉、吖啶、苯并喳啉、啡啶、啡畊、啡噻畊、 0塞嗯、啡d寒嚷、σ#喝嘴、二嚷吩、三嗔吩、四°塞吩、二口夫 喃、三吱喃、四σ夫喃、二11比17各、三吼p各、四吼洛、二石夕ρ各、 三石夕口各、四石夕口各、二吼。定、三吼口定、四吼咬、苯基吼口各、 苯基吼啶、苯基呋喃、苯基噻吩及苯基f二唑。此等基團可 作為單價芳族基團或二價芳族基團,且可經取代或未經取 代。 於上述式(2)中,Arx較佳為伸苯基基團或伸萘基基團, 且上述式(3)之Ari及Αι*2中之每一者(可彼此相同或相異) 20 312/發明說明書(補件)/92· 11 /92123418 200404833 係獨立地選自以式(3 )表示之基團。於式(3 )中,R丨及R2 中之每一者係獨立地選自氫原子、CM -C4烷基基團及CH-C4 烷氧基基團。當將烷基基團引入末端時,生成的高分子變 為具上述之玻璃轉變溫度。因此,Ri及R2中之每一者更佳 為氫原子、曱基基團或曱氧基基團,其中氫原子為最佳。 於本發明中,樹枝狀高分子之「末端部分」一詞係通常 用於代表其中樹枝狀或放射狀分支結構之任意數目末端結 合於此之表面結構藉以形成樹枝狀高分子之分子表面,(即 不包括樹枝狀或放射狀分支(重複單元)之部分結構)。然 而,含有適合作為最外分支結構重複單元的端點之苯環之 芳族胺部分亦在以上範圍内。 關於本發明樹枝狀高分子末端部分之結構沒有特別限 制,只要此等部分至少具一末端芳族胺部分即可。然而, 較佳係具有以式(2 )表示之結構之末端部分,俾達到高載體 傳導率。末端部分之特例包含(但不限於)以下式(5 )代表 者。關於此等末端部分與樹枝狀結構單元間之結合方式沒 有特別限制,且其實例包含上述含有適合作為最外分支結 構重複單元的端點之苯環之芳族胺部分;經由乙烯基基團 之鍵結;碳-碳鍵;碳-氮鍵;醯胺基;醚鍵;酯鍵;及脲 鍵。 (5)First generation, 4-branched dendrimers First generation, 3-branched dendrimers or second-generation dendrimers 17 312 / Description of the Invention (Supplements) / 92-11 / 92123418 200404833 In particular, the first generation Dendrimers with dendrites linked to tetravalent onion cores are defined as first-generation, 4-branched dendrimers, and similar first-generation dendrites are defined with trivalent benzene-dendritic dendrimers. It is a first-generation, 3-branched dendrimer or a second-generation dendrimer. The dendrimer of the present invention is characterized in that the polymer has an aromatic amine moiety at its end and has dendritic repeating units formed from phenylene and ethynyl. As a result, the solubility of polymers in organic solvents increases; hole conductivity is provided at the ends of the polymers; and the phenylene vinylene main chain system contained in the polymer molecules is protected by the aromatic amine main chain as the molecular surface . Therefore, it is possible to supply an organic semiconductor material that is stable in the air and exhibits isotropic and very high carrier conductivity. As described above, the dendrimer of the present invention having a large number of branches provides a large number of branched ends. Through the use of the end, the number of carriers can be increased. Furthermore, because dendrimers provide a large number of pathways for carrier conduction, the carrier mobility can be effectively improved without the need to orient molecules and increase crystallinity (this has been targeted at conventional conjugated polymers and low-molecular organic semiconductor materials get on). Because the non-planar tertiary aromatic amine moiety is introduced into the polymer terminal, the polymer becomes more amorphous than a polymer with only a phenylene and vinylidene moiety, can form a film (no breaks), and is stable ( No crystallization). The structure of the dendrimer of the present invention is not particularly limited, as long as the polymer has a dendritic structure and the dendritic molecules do not necessarily have a completely neat branch structure. However, when the dendrimer of the present invention is a dendrimer, it is preferred that the dendrimer is a second-generation or higher-generation one to achieve high carrier conductivity. The term "dendrimer generation" represents this expression. Generation 18 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833 The number of generations of dendrimers with a larger or long central portion is usually 1 to 10. However, from the viewpoints of the carrier conductivity, the space density of the terminal portion, and the ease of synthesis, the number is preferably 2 to 8, more preferably 2 to 7, and most preferably 2 to 5. The structure of the dendrimer of the present invention is not particularly limited, as long as the polymer has a dendritic repeating unit formed of the phenylene vinylene group represented by the above formula (1) and has an aromatic amine moiety at its terminal. As used herein, the term "aromatic amine moiety" refers to a moiety having an aromatic group in place of a hydrogen atom of an amine group or a moiety containing a divalent aromatic group (where this part is bound). The aromatic amine moiety may have a hydrocarbon group on the side attached to the dendritic repeat unit. In this example, for example, the aromatic amine moiety is linked to the dendritic repeat portion through an organic group containing a divalent aromatic group. In particular, two or more of these aromatic amine moieties may be present on the polymer terminal. In this example, the aromatic amine moiety may be directly bonded to the dendritic repeating unit or may be indirectly bonded to the repeating unit through another substituent (preferably an aromatic group). The aromatic amine moiety preferably contains a moiety represented by the above formula (2). In formula (2), Arx represents a single bond or a divalent aromatic group, and each of An * Ar2 represents a monovalent aromatic group. Examples of single bond or divalent aromatic groups include substituted or unsubstituted aromatic hydrocarbon groups, aromatic heterocyclic groups, fused polycyclic aromatic hydrocarbon groups, fused heterocyclic aromatic groups And single bond or divalent aromatic groups which are fused through the ring condensing of these groups. For example, a single bond or a divalent aromatic group preferably has 50 carbon atoms (or less), and may contain heteroatoms such as 0, N, S, P, B, or Si, or in addition to Unsubstituted structure outside 19 312 / Description of the Invention (Supplement) / 92-11 / 92123418 200404833 May have substituents, such as an alkyl group, an alkyl group, a vial group, a weyl group, a fluorenyl group Group, nitro group, cyano group, or halogen (such as fluorine, chlorine, bromine, or iodine) atom. Specific examples include (but are not limited to) benzene, naphthalene, onion, naphthacene, pentacene, hexaphenyl, phenanthrene, phenalene, pyrene, l (chrysene), benzo S, perylene , Bitriphenylene, ca ore nene, cynophthalene, naphtho; I, biphenylene, phenylene, phenanthrene, biphenyl, bitriphenyl, bitetraphenyl, bipentadiene, biphenyl Benzene, diheptabenzene, phenyl shallot, phenyl naphthalene, diphenyl shallot, biphenylene, diphenylene, fluorene, ene, naphthalene, dibenzodine, therapeutics, cyclopentadiene, Zixphene, Gou 7 Dried, Waxian onion, Diquat benzene, Fu, Meng, Huanxin four women, octarene, rubrene, σ stope, squeak, roar, Shi Xi ° each ( si 1 ο 1 e), Jun, 嚷 嗤, Mi 嗤, mouth than Jun, furazane, two 嗤, 嚷 20 sitting, roaring, thio travelan, pyrimidine, roaring, da Till, stilbene, benzopyrene, benzofuran, benzosilrole, indole, benzoxazole, benzothiazole, benzimidazole, phopholine, thioxene, oxazoline, carbazole, two Benzosilrole, dibenzofuran, dibenzothia , Morpholine, acridine, benzoxoline, phenanthrene, phenanthrene, phenanthrene, 0thumb, morphine, σ # drinking mouth, diphenanthrene, triphenylphene, tetraphenylphenanthrene, diphenanthrene Mouth whistle, three squeak whistle, four sigma whistle, two 11:17 each, three roar p each, four roar Luo, two stone xi ρ each, three stone xikou each, four stone xi kou each, two roar. Ding, Ding Ding Ding, Ding Ding Ding, Ping Ding Ding, Phenol Ding, Phenylfuran, Phenylthiophene and Phenyl f-diazole. These groups may be used as monovalent aromatic groups or divalent aromatic groups, and may be substituted or unsubstituted. In the above formula (2), Arx is preferably a phenylene group or a naphthyl group, and each of Ari and A ** 2 of the above formula (3) (may be the same or different from each other) 20 312 / Description of the Invention (Supplement) / 92 · 11/92123418 200404833 is independently selected from the group represented by formula (3). In formula (3), each of R1 and R2 is independently selected from a hydrogen atom, a CM-C4 alkyl group, and a CH-C4 alkoxy group. When an alkyl group is introduced into the terminal, the resulting polymer becomes a glass transition temperature as described above. Therefore, each of Ri and R2 is more preferably a hydrogen atom, a fluorenyl group or an fluorenyl group, among which a hydrogen atom is most preferable. In the present invention, the term "end portion" of a dendrimer is generally used to represent a surface structure in which any number of ends of a dendritic or radial branch structure are bound to form a molecular surface of the dendrimer, ( That is, it does not include dendritic or radial branches (repeating units). However, the aromatic amine moiety of the benzene ring containing the terminal end of the repeating unit of the outermost branched structure is also within the above range. The structure of the terminal portion of the dendrimer of the present invention is not particularly limited as long as these portions have at least one terminal aromatic amine portion. However, it is preferable to have a terminal portion of the structure represented by the formula (2), and to achieve high carrier conductivity. Specific examples of the terminal part include (but are not limited to) the following formula (5). There is no particular limitation on the manner of bonding between these terminal portions and dendritic structural units, and examples thereof include the aforementioned aromatic amine moieties containing a benzene ring suitable as an end point of an outermost branched repeating unit; Bonding; carbon-carbon bonds; carbon-nitrogen bonds; amido groups; ether bonds; ester bonds; and urea bonds. (5)

21 312/發明說明書(補件)/92-11 /92123418 20040483321 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833

R!至Rf氫原子、tn-C4烷基基團或C1-C4烷氧基基團。 於本發明之樹枝狀高分子中,作為分支結構起始點之重 複單元的起始點可結合於作為核心之中心部分。簡單地 說,核心可鏈接於樹枝狀分支結構之任意數目起始點,且 代表除了分支結構外之部分結構。換言之,核心適合作為 樹枝狀高分子分子之中心,且代表除了重複單元外之一部 分樹枝狀高分子。 核心之特例包含C 1 - C 2 0伸烷基基團、C 6 - C 2 0伸芳基基 團以及其中合併此等伸烷基基團與伸芳基基團之基團。除 了未經取代的伸烷基基團外,伸烷基基團可於其中含雜原 子,例如0、N Η、N ( C Η 3)、S或S 0 2,或可具取代基,例如 羥基基團、羧基基團、醯基基團或鹵素(例如氟、氯、溴或 碘)原子。核心可為任一上述基團之多價基團,其鍵結於碳 原子之氫原子係此移除;其中雜環基團與任一上述烴基團 鏈結在一起之基團; < 啉或口1、啉絡合物。除了具至少二價 之核心實例中,亦可使用藉鏈結氫於多價核心而形成之單 價核心。特別地,以上述式(4 )代表之部分較佳用作核心。 特別地,不具核心之樹枝狀高分子亦在本發明之範圍 内。於此例中,本發明樹枝狀高分子之分支結構的起點係 22 312/發明說明書(補件)/92-11 /92123418 200404833 根據用於製造重複單元(用於形成分支結構)之起始材料而 決定。就分支結構之起點而言’亦可以氮取代起始材料之 活性基團。 關於合成本發明樹枝狀高分子之方法沒有特別限制,且 該高分子可形成(即合成)自含有芳族胺部分之單體(或其 前驅體)及含有適合作為伸苯基伸乙烯基部分之結構之單 體。此中所用之「單體」一詞代表具有芳族胺骨架作為部 分結構或適合作為伸苯基伸乙烯基部分前驅體之低分子量 化合物類型,其中此化合物包含引入其用於形成伸苯基伸 乙烯基部分之相互反應取代基衍生物以及其前驅體。關於 用於自單體形成樹枝狀高分子結構之合成方法沒有特別限 制,並且可用之方法皂含其中分支接續地自焦點延伸之「分 歧法(divergentmethod)」、其中分支自分支末端延伸且因 而連接單元最終結合於焦點之「收斂法」以及A B 2型(A與 B相互之反應性官能基團)之多官能單體的縮聚反應。於此 等方法中,「收斂法」較佳係基於不須過量起始材料以及純 化產物之便利性而用於有效地合成無瑕疵之高純度樹枝狀 高分子。形成伸苯基伸乙烯基骨架之方法的實例包含揭示 於公開文獻中者,請參照例如S . K . D e b等人;J . A m . C h e m · Soc. 1997, 119, 9079, J· N. G. Pillow 等人; Macromolecules 1999 » 第 32 卷,No. 19,5 9 8 5 ; H. Meier 等人;Angew. Ch e m. In t. Ed. 1 9 9 8,37,No. 5,6 4 3, M. Hailm 等人;Adv. Mater. 1999 , 11 , No. 5 , 371 , H. Meier 等人;Chem. Eur. J. 2 0 0 0,6,No. 13,2 4 6 2,J. 23 312/發明說明書(補件)/92-11 /92123418 200404833 M. Lupton 等人;A d v. Mater. 2 0 0 1,13,No. 4 J. L. Segura 等人;0 r g. Lett. 2 0 0 1,第 3 卷,1 或 E. D. Barra 等人;J. 0 r g. Ch e m. 2 0 0 1,66, 本發明之樹枝狀高分子可經由以上文獻中揭示之2 得。 舉例來說,於其末端部分含三級芳族胺部分且# 述式(1 )表示之結構的之樹枝狀高分子可經由「收5 得,其係含有以化學反應式(6 )表示之反應步驟: ,2 5 8, 7 , 2645 5 6 6 4 〇 _法製 r由以上 致法」製R! To Rf hydrogen atom, tn-C4 alkyl group or C1-C4 alkoxy group. In the dendrimer of the present invention, the starting point of the repeating unit as the starting point of the branched structure may be combined with the central portion as the core. Simply put, the core can be linked to any number of starting points of the dendritic branch structure, and represents a part of the structure other than the branch structure. In other words, the core is suitable as the center of the dendrimer and represents a part of the dendrimer except for the repeating unit. Specific examples of the core include a C 1 -C 2 0 alkylene group, a C 6-C 2 0 alkylene group, and a group in which these alkylene groups and an alkylene group are combined. In addition to an unsubstituted alkylene group, the alkylene group may contain heteroatoms therein, such as 0, NN, N (CΗ3), S or S02, or may have a substituent such as A hydroxyl group, a carboxyl group, a fluorenyl group, or a halogen (such as fluorine, chlorine, bromine, or iodine) atom. The core may be a polyvalent group of any of the above-mentioned groups, and the hydrogen atom bonded to the carbon atom is removed; the group in which the heterocyclic group is linked to any of the above-mentioned hydrocarbon groups; < Or mouth 1, phthaloline complex. In addition to the core example with at least two valences, a monovalent core formed by linking hydrogen to a multivalent core can also be used. In particular, the part represented by the above formula (4) is preferably used as the core. In particular, dendrimers without a core are also within the scope of the present invention. In this example, the starting point of the branching structure of the dendrimer of the present invention is 22 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833 According to the starting material used to make the repeating unit (for forming the branching structure) And decide. As far as the starting point of the branched structure is concerned, the reactive group of the starting material may be replaced by nitrogen. There is no particular limitation on the method for synthesizing the dendrimer of the present invention, and the polymer can form (ie, synthesize) a monomer (or a precursor thereof) containing an aromatic amine moiety and a polymer containing a suitable vinylidene moiety Monomer of structure. As used herein, the term "monomer" refers to a type of low molecular weight compound that has an aromatic amine skeleton as a partial structure or is suitable as a precursor for a phenylene vinylene moiety, where this compound includes its introduction to form a phenylene vinylene Partially reactive substituent derivatives and their precursors. There is no particular limitation on the synthetic method used to form a dendrimer structure from a monomer, and the available methods include a "divergent method" in which branches successively extend from the focal point, in which the branches extend from the ends of the branches and are thus connected The unit is finally combined with the "convergence method" of the focal point and the polycondensation reaction of polyfunctional monomers of type AB 2 (reactive functional groups between A and B). Among these methods, the "convergence method" is preferably used for efficiently synthesizing a defect-free high-purity dendrimer based on the convenience of not requiring an excessive amount of starting materials and purification products. Examples of the method for forming a phenylene vinylene skeleton include those disclosed in the open literature, see, for example, S. K. Deb et al .; J. Am. C hem · Soc. 1997, 119, 9079, J. NG Pillow et al .; Macromolecules 1999 »Volume 32, No. 19, 5 9 8 5; H. Meier et al .; Angew. Ch e m. In t. Ed. 1 9 9 8, 37, No. 5, 6 4 3, M. Hailm et al .; Adv. Mater. 1999, 11; No. 5, 371; H. Meier et al .; Chem. Eur. J. 2 0 0 0 6, 6, No. 13, 2 4 6 2, J. 23 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833 M. Lupton et al .; A d v. Mater. 2 0 0 1, 13, No. 4 JL Segura et al. 0 r g. Lett 2 0 01, Vol. 3, 1 or ED Barra et al .; J. 0 r g. Ch e m. 2 0 0 1, 66. The dendrimer of the present invention can be obtained through 2 disclosed in the above literature. . For example, a dendrimer having a tertiary aromatic amine moiety at its terminal portion and having the structure represented by the formula (1) can be obtained by "Receiving 5, which contains the component represented by the chemical reaction formula (6) Reaction steps:, 2 5 8, 7, 2645 5 6 6 4 〇_Method r by the above method

312/發明說明書(補件)/92-11 /92123418 24 200404833312 / Invention Specification (Supplement) / 92-11 / 92123418 24 200404833

其中η為整數1至5,Aim及An中之每一者代表單價芳 族基團,且Arx代表單鍵或二價芳族基團。 以化學方程式(6 )表示之反應步驟包含反應步驟1,其中 具有用於形成末端部分之芳族胺部分W之乙烯化合物(a ) 與化合物(b )反應,藉以形成化合物(c );反應步驟2,其 中所形成之化合物(c)之醛基團經轉化為乙烯基基團,藉以 形成化合物(d );以及反應步驟3,其中產物(d )係與化合 物(b )反應,藉以形成接續世代之樹突(e )。此外,當樹突 結合於苯環核心時,進行反應步驟4,其中化合物(e )係透 過與醛基團之反應而與具有用於形成乙烯基骨架之取代基 之化合物(f )反應,藉以形成化合物(g)。 於上述化合物中,化合物(c )及化合物(d )可稱為第一代 樹枝狀分子或樹突,而化合物(e )可稱為第二代樹枝狀分子 或樹突。為了簡單說明之目的,僅具第一及第二代數目之 樹枝狀分子顯示於化學方程式(6 )之上述反應步驟1至3 中。然而,可藉重複反應步驟2及3製得進一步世代之樹 25 312/發明說明書(補件)/92-11 /92123418 200404833 枝狀分子。 化合物(g )可定義為第三代樹枝狀分子或第二代,3 -分 支樹枝狀分子。於以上化學方程式中,第二代樹枝狀分子 (e )係結合於化合物(f )。然而,任一代之樹枝狀分子可結 合於根據類似反應步驟之中心結構分子。 用以使化合物(c )轉化為化合物(e )之反應亦可經由顯 示於以下化學方程式中之反應步驟5進行如下式(7)所 示。特別地,化合物(c )係與分支來源化合物(h )反應,接 著進行用於形成乙縮醛基團之去保護作用,藉以製造化合 物(e )。經由使用類似的反應,可自類似化合物(a )且具酿 基團(替代乙烯基基團)之芳族胺化合物製得化合物(c)。經 由重複反應步驟5,可製得具較高代之樹枝狀高分子。Where η is an integer of 1 to 5, each of Aim and An represents a monovalent aromatic group, and Arx represents a single bond or a divalent aromatic group. The reaction step represented by the chemical formula (6) includes reaction step 1 in which an ethylene compound (a) having an aromatic amine moiety W for forming a terminal portion is reacted with a compound (b) to form a compound (c); a reaction step 2. The aldehyde group of the formed compound (c) is converted into a vinyl group to form a compound (d); and reaction step 3, wherein the product (d) is reacted with the compound (b) to form a continuum Generations of dendrites (e). In addition, when the dendrite is bound to the core of the benzene ring, reaction step 4 is performed, in which the compound (e) is reacted with the compound (f) having a substituent for forming a vinyl skeleton through a reaction with an aldehyde group, whereby Compound (g) is formed. Among the above compounds, the compound (c) and the compound (d) may be referred to as a first-generation dendrimer or dendrite, and the compound (e) may be referred to as a second-generation dendrimer or dendrite. For the purpose of simple explanation, dendrimers having only the first and second generation numbers are shown in the above reaction steps 1 to 3 of the chemical equation (6). However, further generations of trees can be made by repeating reaction steps 2 and 3 25 312 / Explanation of the Invention (Supplement) / 92-11 / 92123418 200404833 Dendrimers. Compound (g) can be defined as a third-generation dendrimer or a second-generation, 3-branched dendrimer. In the above chemical equation, the second generation dendrimer (e) is bound to the compound (f). However, dendrimers of any generation can be combined with central structure molecules according to similar reaction steps. The reaction for converting the compound (c) into the compound (e) can also be performed as shown in the following formula (7) via reaction step 5 shown in the following chemical equation. In particular, the compound (c) is reacted with a branched source compound (h), followed by a deprotection for forming an acetal group, thereby producing a compound (e). The compound (c) can be prepared from an aromatic amine compound similar to the compound (a) and having a brewing group (instead of a vinyl group) by using a similar reaction. By repeating Step 5 of the reaction, a dendrimer having a higher generation can be obtained.

r (e) 於反應步驟1或3中,化合物(a )或化合物(d)與化合物 (b )之反應可經由H e c k反應製得(請參見例如R. F . H e c k 等人,J· Org. Chem. 1972, 37, 2320 ;或 T. Mizoroki 等人,Bull. Chem. S o c. Jpn. 1971,44,581)0 可使用 26 312/發明說明書(補件)/92-11/92123418 200404833 鈀觸媒與鹼觸媒之各種組合作為H e c k反應觸媒。鈀觸媒之 實例包含四(三苯基膦)鈀、醋酸鈀、氯化鈀、鈀黑、二氯 化雙(三苯基膦)鈀、雙(二伸苄基丙酮)鈀、二氯化雙(三環 己基膦)鈀、二氯化[1,2 -雙(二苯基膦基)丁烷]鈀及二氯化 [1,2 -雙(二苯基膦基)乙烷]鈀。此外,配位體化合物與此 等鈀觸媒之組合可能是有效的。配位體化合物之實例包含 三苯基膦、1,1’_雙(二苯基膦基)二茂絡鐵、1,2 -雙(二苯 基膦基)乙烷、1,3_雙(二苯基膦基)丙烷、1,4 -雙(二苯基 膦基)丁烷、二苯基膦基苯-3-磺酸鈉、三環己基膦、三(2-呋喃基)膦、三(2 ,6 -二甲氧基苯基)膦、三(4 -甲氧基苯基) 膦、三(4 -甲基苯基)膦、三(3 -曱基苯基)膦及三(2 -甲基苯 基)膦。替代鈀觸媒,亦可使用鎳觸媒[1,1 ’ -雙(二苯基膦 基)二茂絡鐵]二氣化鎳。鹼觸媒之實例包含醋酸鉀、醋酸 鈉、碳酸鈉、烧氧化鈉(例如乙氧化納)、第三丁氧基钟、 氫氧化鋇、三乙基胺、磷酸鉀、氫氧化鈉及碳酸鉀。較佳 使用之反應溶劑的實例包含二甲基曱醯胺、二甲基亞砜、 二0¾烷、苯、曱苯、四氫呋喃、二曱氧基乙烷、二甲基乙 醯胺、二曱苯及丙腈。反應溫度較佳為2 5至1 5 0 °C ,且反 應時間較佳為3 0分鐘至2 4小時,更佳為1小時至1 2小時。 於步驟2中,化合物(c )之醛基團轉換為形成化合物(d ) 用之乙烯基基團之反應可經由Wittig反應進行。Wittig 反應係已知為有效經由酸或S同與構-葉立德(y 1 i d e )之反應 而製造烯類之反應(請參見例如0 r g . R e a c t. 1 9 6 5,1 4, 2 7 0 )。於化學反應式(6 )中,經由與磷-葉立德之反應使醛 27 312/發明說明書(補件)/92-11 /92123418 200404833 基團轉換為乙烯基基團之反應可藉使用已藉使甲基函化物 與三苯基膦反應製得之磷-葉立德而進行,藉以形成鐫鹽, 並且以鹼(例如烷基鋰或烷氧化物)使鐫鹽去質子。可適當 地使用溶劑,例如四氫呋喃、二乙醚及二甲基亞砜。由於 磷-葉立德對水具高反應性,故所用之溶劑較佳經有效地脫 水。 於反應步驟4中,化合物(e )與用於製造化合物(g )之化 合物(f)之反應可經由Horner- Wadsworth- Emmons反應進 行(請參見例如 L. Horner 等人,Chem· Ber. 1962,95, 581 ;或 W. S. W a d s w o r t h 等人,J . A m . Chem. S o c . 1961, 8 3,1 7 3 3 )。諸如氫氧化鈉及烷氧化物等鹼適合用作觸媒。 反應溶劑之實例包含甲醇、乙醇、苯、四氫呋喃、二甲基 亞砜、二乙醚及二甲氧基乙烷。 於反應步驟5中,化合物(c )與用於製造化合物(e )之化 合物(h)之反應可經由Horner-Wadsworth-Emmons反應進 行(請參見例如 L. Horner 等人,Chem. Ber. 1962,95, 581 ; W . S . Wadsworth 等人,J· A m. Chem. S o c. 1961, 83,1 7 3 3; E. D. Barre 等人,J. Org. Chem. 2 0 0 1,66, 5 6 6 4 ;或 H. Meier 等人,Chem. Eur. J. 2000,6,No. 13, 2 4 6 2 )。諸如氫氧化鈉及烷氧化物等鹼適合用作觸媒。反應 溶劑之實例包含甲醇、乙醇、苯、四氫呋喃、二曱基亞砜、 二乙醚及二曱氧基乙烷。關於用於使乙縮醛基團去保護之 酸沒有特別限制,且可使用諸如無機酸、有機酸及離子交 換樹脂等酸類。 28 312/發明說明書(補件)/92-11 /92123418 200404833 關於合成化合物(a )之方法沒有特別限制。可容易地藉 例如合成具醛取代基之芳族胺化合物且使醛基團轉換為乙 稀基基團而合成化合物(a)。於此例中,轉換為乙嫦基基團 之反應可經由W i 11 i g反應進行(請參見例如0 r g . R e a c t · 1 9 6 5,1 4,2 7 0 )。具醛取代基之芳族胺化合物可經由芳族 胺化合物與V i 1 s m e i e r試劑之甲醯化作用而合成。另一可 能的方法包含經由U 1 1 m a η η縮合反應(請參見C h e m .r (e) In reaction step 1 or 3, the reaction of compound (a) or compound (d) with compound (b) can be prepared via Heck reaction (see, for example, R. F. Heck et al., J · Org. Chem. 1972, 37, 2320; or T. Mizoroki et al., Bull. Chem. Soc. Jpn. 1971, 44, 581) 26 312 / Description of the Invention (Supplement) / 92-11 / 92123418 200404833 Various combinations of palladium catalyst and alkali catalyst are used as H eck reaction catalysts. Examples of palladium catalysts include tetrakis (triphenylphosphine) palladium, palladium acetate, palladium chloride, palladium black, bis (triphenylphosphine) palladium dichloride, bis (dibenzylacetone) palladium, dichloride Bis (tricyclohexylphosphine) palladium, [1,2-bis (diphenylphosphino) butane] palladium dichloride and [1,2-bis (diphenylphosphino) ethane] palladium dichloride . In addition, a combination of a ligand compound and such a palladium catalyst may be effective. Examples of the ligand compound include triphenylphosphine, 1,1′_bis (diphenylphosphino) ferrocene, 1,2-bis (diphenylphosphino) ethane, 1,3_bis (Diphenylphosphino) propane, 1,4-bis (diphenylphosphino) butane, sodium diphenylphosphinobenzene-3-sulfonate, tricyclohexylphosphine, tris (2-furyl) phosphine , Tris (2,6-dimethoxyphenyl) phosphine, tris (4-methoxyphenyl) phosphine, tris (4-methylphenyl) phosphine, tris (3-fluorenylphenyl) phosphine and Tris (2-methylphenyl) phosphine. Instead of a palladium catalyst, a nickel catalyst [1,1'-bis (diphenylphosphino) ferrocene iron] digasified nickel can also be used. Examples of alkali catalysts include potassium acetate, sodium acetate, sodium carbonate, sodium oxide (such as sodium ethoxylate), third butoxy bell, barium hydroxide, triethylamine, potassium phosphate, sodium hydroxide, and potassium carbonate . Examples of the preferred reaction solvent include dimethylamidine, dimethylsulfoxide, dioxane, benzene, toluene, tetrahydrofuran, dimethoxyethane, dimethylacetamide, and dibenzobenzene And propionitrile. The reaction temperature is preferably 25 to 150 ° C, and the reaction time is preferably 30 minutes to 24 hours, and more preferably 1 hour to 12 hours. In step 2, the reaction of converting the aldehyde group of the compound (c) into a vinyl group for forming the compound (d) can be performed via a Wittig reaction. The Wittig reaction is known to be effective in the production of alkenes via the reaction of acid or S with conformation-ylide (see, for example, 0 rg. R eac t. 1 9 6 5, 1 4, 2 7 0). In the chemical reaction formula (6), the reaction of converting the aldehyde 27 312 / Invention (Supplement) / 92-11 / 92123418 200404833 group to a vinyl group through a reaction with phosphorus-Ylide can be used by using Phosphorus-ylide produced by the reaction of a methyl functional compound with triphenylphosphine is carried out to form a phosphonium salt, and the phosphonium salt is deprotonated with a base such as an alkyl lithium or an alkoxide. Solvents such as tetrahydrofuran, diethyl ether and dimethyl sulfoxide can be appropriately used. Since phosphorus-Ylide is highly reactive with water, the solvent used is preferably effectively dehydrated. In reaction step 4, the reaction of the compound (e) with the compound (f) used to produce the compound (g) can be performed via a Horner-Wadsworth-Emmons reaction (see, for example, L. Horner et al., Chem. Ber. 1962, 95, 581; or WS W adsworth et al., J. Am. Chem. Soc. 1961, 8 3, 1 7 3 3). Bases such as sodium hydroxide and alkoxides are suitable as catalysts. Examples of the reaction solvent include methanol, ethanol, benzene, tetrahydrofuran, dimethyl sulfoxide, diethyl ether and dimethoxyethane. In reaction step 5, the reaction of the compound (c) with the compound (h) used to make the compound (e) can be performed via a Horner-Wadsworth-Emmons reaction (see, for example, L. Horner et al., Chem. Ber. 1962, 95, 581; W. S. Wadsworth et al., J. Am. Chem. Soc. 1961, 83, 1 7 3 3; ED Barre et al., J. Org. Chem. 2 0 0 1, 66, 5 6 6 4; or H. Meier et al., Chem. Eur. J. 2000, 6, No. 13, 2 4 6 2). Bases such as sodium hydroxide and alkoxides are suitable as catalysts. Examples of the reaction solvent include methanol, ethanol, benzene, tetrahydrofuran, difluorenyl sulfoxide, diethyl ether and dimethoxyethane. The acid used for deprotecting the acetal group is not particularly limited, and acids such as inorganic acids, organic acids, and ion exchange resins can be used. 28 312 / Invention (Supplement) / 92-11 / 92123418 200404833 There is no particular limitation on the method for synthesizing compound (a). The compound (a) can be easily synthesized by, for example, synthesizing an aromatic amine compound having an aldehyde substituent and converting the aldehyde group to an ethylene group. In this example, the reaction for conversion to an ethanoyl group can be performed via a Wi i 11 i g reaction (see, for example, 0 r g. Re a c t · 1 9 6 5, 1 4, 2 7 0). The aromatic amine compound having an aldehyde substituent can be synthesized through the formazanation of the aromatic amine compound and the Vi i 1 smeier reagent. Another possible method involves a condensation reaction via U 1 1 m a η η (see C h e m.

Lett.,1145,( 1 9 8 9 ),Synth. Commu. 3 8 3,( 1 9 8 7 )等) 或經由T o s o法(揭示於日本專利特許公開申請案(k o k a i ) 第1 0 - 3 1 0 5 6 1號)使二芳基胺化合物與具有醛基團(以其乙 縮醛形式保護)之芳基_化物縮合以及使乙縮醛基團去保 護。 於每一反應步驟中生成的化合物經純化,因而合成具少 量瑕疵之高純度樹枝狀高分子。關於純化方法沒有特別限 制,且可使用再結晶法、結晶法、昇華法及管柱純化法。 根據上述製造方法,可藉選擇用於形成分支末端之化合 物(a )與用於形成中心部分之化合物(f )之種類而製得各種 在其末端聚芳族胺部分之樹枝狀高分子。由於製造方法係 以「收斂法」,其中每一反應步驟中之純化製程可容易地進 行為基礎,故可製得具少量瑕疵之高純度樹枝狀分子(一種 樹枝狀高分子)。 本發明具載體傳導性之樹枝狀高分子可設想用於許多 領域。藉選擇其分子結構或摻雜或類似方法,本發明之樹 枝狀高分子可提供電洞傳輸(p -型)、電子傳輸(η -型)及許 29 312/發明說明書(補件)/92-11 /92123418 200404833 多功能性電子材料。因此,此等電子材料可用於開關元件, 例如有機電晶體元件、有機F E T元件或有機T F T元件、太 陽能電池、光電轉換元件、電容器、發光元件、電致發光 元件、高分子二級電池等。接著將於以下說明適用於每一 目的之此等元件的結構。 由具電洞傳輸性及/或電子傳輸性之有機層所形成之有 機電晶體元件包含半導體層、由導電層所形成之閘極電極 及插入半導體層與導電層之間之絕緣層,為了組裝,將源 極電極與汲極電極接合,藉以製造電晶體元件。以上有機 層係由本發明之樹枝狀高分子所形成。 發光裝置包含一對平行配置之板狀電極以及含以本發 明材料介於兩電極間之有機層。一般而言,此裝置係由透 明電極(例如IT 0 )、電洞注射層、電洞傳輸層、發光層、 電子傳輸層及金屬電極所形成。載體傳輸功能及發光功能 可合併於單一結構中。以上有機層係自本發明之樹枝狀高 分子所形成。 光電轉換元件或太陽能電池通常包含由平行配置之板 狀電極夾住之有機層。有機層可形成在梳狀電極上。關於 有機層之位置沒有特別限制。關於電極材料沒有特別限 制。然而,當使用平行配置之板狀電極時,至少一電極較 佳係由透明電極(例如I T 0電極或摻氟的氧化錫電極)所形 成。有機層係由二個次要層所形成,即一層由本發明具P 型半傳導性或電洞傳輸性之樹枝狀高分子所形成,以及一 層由本發明具η型半傳導性或電子傳輸性之樹枝狀高分子 30 312/發明說明書(補件)/92-11 /92123418 200404833 所形成。再者,當將光敏性染料基團引入含於二 之樹枝狀向分子’或兩分子或兩分支兩分子在廣 特殊光敏性染料分子部分設於二層間時,元件效 步提高,且可藉使用例如具此一結構之太陽能電 效率產能。在本案中,光敏性染料分子部分具有 輸樹枝狀高分子之HOMO (最高佔滿的分子執域)能 之HOMO能階,且具有比電子傳輸樹枝狀高分子之 少未佔滿的分子執域)能階更高之LUM0能階。 當滿足電洞傳輸層或電子傳輸層之光激發條件 傳導高分子或樹枝狀高分子設置於電洞傳輸層與 層間時,可形成電化學光電轉換元件。根據需要 性染料基團引入任一層中。 電容器包含電洞傳輸層及電子傳輸層,其中一 導體層,且另一者作為半導體層,且絕緣層係插 與半導體層之間。另外,電洞傳輸層及電子傳輸 由導電層所形成,且離子傳導層係插入二導電層R 電洞傳輸層係由ρ -型半導體層所形成,且電子傳 η -型半導體層所形成,且此等層可經堆疊,藉以 堆疊的多層。以上半導體係形成自本發明之樹枝狀 電致發光元件包含由可摻雜ρ -型摻雜物且藉氧 反應脫色之高分子層形成之電洞傳輸層、由可摻I 雜物且藉氧化還原反應脫色之高分子層形成之電 及含支持電解質且設置於兩層間之一層。此元件 於高分子二級電池,因而可提供具高容量及低内 312/發明說明書(補件)/92-11 /92123418 層之一中 義上包含 能可進一 池達到高 比電洞傳 階更低 LUM0(最 之離子 電子傳輸 可將光敏 者作為半 入導體層 層兩者皆 3。另外, 輸層係由 形成連續 L高分子。 化還原 准η-型摻 洞傳輸層 結構可用 電阻之二 31 200404833 級電池。 如上述,藉使用根據本發明之上述材料,可經由簡單的 製程製造需要載體傳導性且具明顯高載體傳導率之裝置。 (實施例) 接著,本發明將參照有關樹枝狀高分子及使用此等樹枝 狀高分子之功能元件之以下描述的實施例而說明,本發明 不應受限於此。用於測量之裝置等係說明如下。 NMR: FT-NMR,型號 JNM-AL400 (400 MHz,JE0L 之產品), 溶劑:C D C 13,室溫,化學位移參考值(0 p p m ):四甲基矽 烷(TMS)。 GPC: HLC-8220 GPC,Tosoh Corporation 之產品;管柱: TSK gel Super ΗΖΜ - Μ ;溶離液:THF ;偵測器:UV 2 5 4 毫 微米;測量(重均分子量(Mw )、數均分子量(Mn )及分子量分 布(Mw/Mn))降低至聚苯乙烯(作為標準品)。 [合成例1 ]第三代樹枝狀高分子之合成 [合成例1 - 1 ]二苯基胺基苯乙烯(具有以下式表示之芳族 胺部分作為末端之乙烯基化合物(a))之合成Lett., 1145, (1 9 8 9), Synth. Commu. 3 8 3, (1 9 7 7), etc.) or via the Toso method (disclosed in Japanese Patent Laid-Open Application (kokai) No. 10-3 1 0 5 6 1) Condensing a diarylamine compound with an aryl compound having an aldehyde group (protected in its acetal form) and deprotecting the acetal group. The compound produced in each reaction step is purified, thereby synthesizing a high-purity dendrimer with a small number of defects. The purification method is not particularly limited, and a recrystallization method, a crystallization method, a sublimation method, and a column purification method can be used. According to the above manufacturing method, various kinds of dendrimers having polyaromatic amine portions at the ends can be prepared by selecting the types of the compound (a) for forming the branched end and the compound (f) for forming the central portion. Since the manufacturing method is based on the "convergence method", the purification process in each reaction step can be easily performed on the basis, so a high-purity dendrimer (a dendrimer) with a small number of defects can be produced. The carrier-conductive dendrimer of the present invention can be envisaged to be used in many fields. By selecting its molecular structure or doping or similar method, the dendrimer of the present invention can provide hole transport (p-type), electron transport (η-type) and Xu 29 312 / Invention Specification (Supplement) / 92 -11 / 92123418 200404833 Versatile electronic material. Therefore, these electronic materials can be used for switching elements such as organic transistor elements, organic F E T elements or organic T F T elements, solar cells, photoelectric conversion elements, capacitors, light emitting elements, electroluminescent elements, polymer secondary batteries, and the like. The structure of these elements suitable for each purpose will be described below. An organic transistor element formed of an organic layer having hole-transporting and / or electron-transmitting properties includes a semiconductor layer, a gate electrode formed of a conductive layer, and an insulating layer interposed between the semiconductor layer and the conductive layer. , The source electrode and the drain electrode are bonded to manufacture a transistor element. The above organic layer is formed of the dendrimer of the present invention. The light-emitting device includes a pair of plate-shaped electrodes arranged in parallel and an organic layer containing the material of the present invention between the two electrodes. Generally speaking, this device is formed by a transparent electrode (such as IT 0), a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a metal electrode. The carrier transmission function and the light emitting function can be combined into a single structure. The above organic layer is formed from the dendrimer of the present invention. A photoelectric conversion element or a solar cell usually includes an organic layer sandwiched by plate electrodes arranged in parallel. An organic layer may be formed on the comb-shaped electrode. There is no particular limitation on the position of the organic layer. There are no particular restrictions on the electrode material. However, when using plate electrodes arranged in parallel, at least one electrode is preferably formed of a transparent electrode (such as an I T 0 electrode or a fluorine-doped tin oxide electrode). The organic layer is formed by two secondary layers, that is, one layer is formed by the dendrimer having P-type semiconductivity or hole transportability according to the present invention, and one layer is formed by the η-type semiconductivity or electron transportability according to the present invention. Dendrimer 30 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833. Furthermore, when a photosensitive dye group is introduced into two dendritic molecules or two molecules or two branches and two molecules are located between the two layers of the special photosensitive dye molecule, the element efficiency is improved, and For example, a solar power efficiency capacity having such a structure is used. In this case, the photosensitive dye molecule part has the HOMO energy level of the HOMO (the highest occupied molecular domain) energy of the dendrimer, and has less than the unoccupied molecular domain of the electron transport dendrimer. ) Higher energy level LUM0. When the photoexcitation conditions of the hole transport layer or the electron transport layer are satisfied, a conductive polymer or a dendrimer is disposed between the hole transport layer and the layer, and an electrochemical photoelectric conversion element can be formed. Introducing optional dye groups into either layer. A capacitor includes a hole transport layer and an electron transport layer, one of which is a conductor layer and the other is a semiconductor layer, and an insulating layer is interposed between the semiconductor layer. In addition, the hole transport layer and the electron transport are formed by a conductive layer, and the ion conductive layer is inserted into the two conductive layers. The R hole transport layer is formed by a p-type semiconductor layer, and the electron transport is formed by an η-type semiconductor layer. And these layers can be stacked, thereby stacking multiple layers. The above semiconductor system is formed from the dendritic electroluminescence element of the present invention, which includes a hole transport layer formed of a polymer layer that can be doped with a p-type dopant and decolorized by an oxygen reaction, an I-doped compound, and oxidized. The electricity formed by the polymer layer decolorized by the reduction reaction and the supporting electrolyte is provided in one layer between the two layers. This element is in a polymer secondary battery, so it can provide one of the high capacity and low internal 312 / Invention Specification (Supplement) / 92-11 / 92123418 layers. The meaning is that it can enter a pool to achieve high specific hole transmission. Lower LUM0 (the most ionic electron transport can use the photosensitizer as a semi-inductive layer. Both are 3. In addition, the transport layer is formed by continuous L polymer. The structure of the reduced quasi-n-type hole-doped transport layer can be used for resistance Two 31 200404833 grade batteries. As mentioned above, by using the above-mentioned materials according to the present invention, a device that requires carrier conductivity and has a significantly high carrier conductivity can be manufactured through a simple process. (Example) Next, the present invention will refer to the relevant tree branches Polymers and functional elements using these dendrimers are described in the examples described below, and the present invention should not be limited to them. The devices used for measurement are described below. NMR: FT-NMR, model JNM -AL400 (400 MHz, product of JE0L), solvent: CDC 13, room temperature, chemical shift reference value (0 ppm): tetramethylsilane (TMS). GPC: HLC-8220 GPC, product of Tosoh Corporation; Column: TSK gel Super ΗZΜ-Μ; Eluent: THF; Detector: UV 24 5 nm; Measurement (weight average molecular weight (Mw), number average molecular weight (Mn) and molecular weight distribution (Mw / Mn)) decreased To polystyrene (as a standard product). [Synthesis Example 1] Synthesis of a third generation dendrimer [Synthesis Example 1-1] Diphenylamino styrene (having an aromatic amine moiety represented by the following formula as a terminal Synthesis of vinyl compound (a))

於氮氣壓下,添加脫水四氫呋喃(1 6 0毫升)於溴化甲基 三苯基鐫(42.9克)與第三丁氧基鉀(13·5克)之混合物 中,同時於室溫下攪拌混合物。使生成的混合物於室溫下 反應2小時。接著,將溶解於脫水四氫呋喃(1 2 0毫升)中 32 312/發明說明書(補件)/92-11 /92123418 200404833 之二苯基胺基苯曱醛(1 0 . 9克)逐滴添加於其中,並且使生 成的混合物於室溫下反應2小時。經由添加丙酮(1 0毫升) 至混合物終止反應。將沉澱物經由過濾移除且以二氯甲烷 清洗。合併洗液及濾液,並且在減壓下濾除溶劑,藉以生 成粗產物。分離粗產物,且經由管柱層析純化(填充材料: Silicagel 60 (Merck產品),溶離液:二氯甲烧/正己烧), 藉以生成1 0 . 0克目標產物(黃色固形物,產率:9 2 %)。經 由1 Η - N M R頻譜確認製得產物之結構。量測數據顯示如下。 NMR (CDC13) δ7.29-7.22 (m,苯環,6H) , δ7·08 (d, J=8.4Hz,苯環,4H), 67.03-6.98 (m » 苯環,4H), 66.65 (dd, J = 18Hz, 11 Hz,乙稀基,1H), 5 5. 6 3 (d » J = 18Hz, 乙烯基,1H),δ5·14 (d,J = ll Hz,乙烯基,1H)。 [合成例1 - 2 ]第一代樹突醛(以下式表示)之合成Under nitrogen pressure, dehydrated tetrahydrofuran (160 ml) was added to a mixture of methyltriphenylphosphonium bromide (42.9 g) and potassium tert-butoxide (13.5 g) while stirring at room temperature. mixture. The resulting mixture was allowed to react at room temperature for 2 hours. Next, diphenylaminobenzaldehyde (10.9 g) dissolved in dehydrated tetrahydrofuran (120 ml) 32 312 / Explanation of the Invention (Supplement) / 92-11 / 92123418 200404833 was added dropwise to The resulting mixture was reacted at room temperature for 2 hours. The reaction was stopped by adding acetone (10 ml) to the mixture. The precipitate was removed by filtration and washed with dichloromethane. The washing liquid and the filtrate were combined, and the solvent was filtered off under reduced pressure, thereby producing a crude product. The crude product was separated and purified by column chromatography (packing material: Silicagel 60 (Merck product), eluent: dichloromethane / n-hexane) to produce 10.0 g of the target product (yellow solid, yield : 9 2%). The structure of the product was confirmed by 1 Η-N M R spectrum. The measured data is shown below. NMR (CDC13) δ7.29-7.22 (m, benzene ring, 6H), δ7 · 08 (d, J = 8.4Hz, benzene ring, 4H), 67.03-6.98 (m »benzene ring, 4H), 66.65 (dd , J = 18Hz, 11 Hz, ethylene, 1H), 5 5. 6 3 (d »J = 18Hz, vinyl, 1H), δ5 · 14 (d, J = 11Hz, vinyl, 1H). [Synthesis Examples 1-2] Synthesis of first-generation dendritic aldehyde (represented by the following formula)

於氮氣壓下,添加脫水二曱基乙醯胺(220毫升)於3, 5-二溴苯曱醛(5 . 8克)、於合成例1 - 1中製得之二苯基胺基 苯乙烯(1 2 · 0克)、醋酸鈀(1 . 0克)、三苯基膦(2 · 3克)與 碳酸鈉水合物(5 . 1克)之混合物中。伴隨攪拌過夜,將生 成的混合物加熱至1 1 0 t。於反應完成後,將反應混合物 冷卻至室溫。伴隨攪拌,將二氯甲烷及水添加至反應混合 33 312/發明說明書(補件)/92-11 /92123418 200404833 物,並且分離因而形成之有機層。以水清洗因而分離之有 機層,且通過硫酸鎂乾燥,並且在減壓下蒸除溶劑,藉以 生成油性粗產物。分離粗產物,且經由管柱層析純化(填充 材料:Silicagel 60 (Merck產品),溶離液:二氯甲烧/ 正己烷),藉以生成8. 9克目標產物(黃色固形物,產率: 63%)。經由1H-NMR頻譜確認製得產物之結構。量測數據顯 示如下。 !H NMR (CDCls) δΐθ.1 (s,醛,1H), 57.85 (d, J=1.6 Hz,苯環,2H),5 7.7 9 (t ^ J = 1.6Hz,苯環,1H),57.41 (d,J = 8. 4 Hz,苯環,4H),67.2 7 (t,J = 7. 8 Hz,苯環, 8H), 57.18 (d, J = 16Hz,乙烯基,2H), S7.12(d, J = 8. 4 Hz,苯環,8H),5 7.0 7 - 7.0 2 (m,苯環,8H,及乙烯基, 2H) °Under nitrogen pressure, diphenylaminoacetamide (220 ml) was added to 3,5-dibromobenzaldehyde (5.8 g), and the diphenylaminobenzene prepared in Synthesis Example 1-1 was added. In a mixture of ethylene (1.2 g), palladium acetate (1.0 g), triphenylphosphine (2.3 g) and sodium carbonate hydrate (5.1 g). The resulting mixture was heated to 110 t with stirring overnight. After the reaction was completed, the reaction mixture was cooled to room temperature. With stirring, dichloromethane and water were added to the reaction mixture 33 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833, and the organic layer thus formed was separated. The organic layer thus separated was washed with water, and dried over magnesium sulfate, and the solvent was distilled off under reduced pressure, whereby an oily crude product was formed. The crude product was separated and purified via column chromatography (filler: Silicagel 60 (Merck product), eluent: dichloromethane / n-hexane) to produce 8.9 g of the target product (yellow solid, yield: 63%). The structure of the obtained product was confirmed by 1H-NMR spectrum. The measured data is shown below. ! H NMR (CDCls) δΐθ.1 (s, aldehyde, 1H), 57.85 (d, J = 1.6 Hz, benzene ring, 2H), 5 7.7 9 (t ^ J = 1.6Hz, benzene ring, 1H), 57.41 (d, J = 8. 4 Hz, benzene ring, 4H), 67.2 7 (t, J = 7. 8 Hz, benzene ring, 8H), 57.18 (d, J = 16Hz, vinyl, 2H), S7. 12 (d, J = 8. 4 Hz, benzene ring, 8H), 5 7.0 7-7.0 2 (m, benzene ring, 8H, and vinyl, 2H) °

於氮氣壓下,添加脫水四氫呋喃(3 5毫升)於溴化甲基三 苯基鐫(1 0 · 0克)與第三丁氧基鉀(3 . 1克)之混合物中,同 時於室溫下攪拌混合物。使生成的混合物於室溫下反應2 小時。接著,將合成例1 - 2中製得的第一代樹突醛(4. 5克) 34 312/發明說明書(補件)/92-11 /92123418 200404833 溶解於脫水四氫呋喃(2 2毫升)中,且逐滴地將溶液添加至 以上反應混合物中,並且使生成的混合物於室溫下反應2 小時。經由添加丙酮(1 0毫升)至混合物終止反應。將沉澱 物經由過濾移除且以二氣甲烷清洗。合併洗液及濾液,並 且在減壓下濾除溶劑,藉以生成粗產物。分離粗產物,且 經由管柱層析純化(填充材料:S i 1 i c a g e 1 6 0 ( M e r c k產 品),溶離液:二氯甲烷/正己烷),藉以生成4 · 5克目標產 物(黃色固形物,產率:9 9 % )。經由1 Η - N M R頻譜確認製得 產物之結構。量測數據顯示如下。 !H NMR (CDC 1 3 ) 5 7. 4 8 (s,苯環,1H),6 7. 3 9 - 7. 3 7 (m, 苯 it , 6H), 57.48(t, J = 7.2Hz, ^ St , 8H), 57.11-6.96 (m,苯環,20H),5 6.7 3 (dd,J = 18 Hz,11 Hz,乙烯基, 1H), 65.81 (d, J = 18 Hz,乙烯基,1H), 6 5. 2 8 (d, J = ll H z,乙婦基,1 H )。 [合成例1 - 4 ]第二代樹突醛(以下式表示)之合成Under nitrogen pressure, add dehydrated tetrahydrofuran (35 ml) to a mixture of methyltriphenylphosphonium bromide (10.0 g) and potassium tert-butoxide (3.1 g), while at room temperature The mixture was stirred. The resulting mixture was allowed to react at room temperature for 2 hours. Next, the first-generation dendritic aldehyde (4.5 g) prepared in Synthesis Example 1-2 was dissolved in dehydrated tetrahydrofuran (22 ml) 34 312 / Instruction Manual (Supplement) / 92-11 / 92123418 200404833 The solution was added dropwise to the above reaction mixture, and the resulting mixture was allowed to react at room temperature for 2 hours. The reaction was stopped by adding acetone (10 ml) to the mixture. The precipitate was removed by filtration and washed with two gases of methane. The washing liquid and the filtrate were combined, and the solvent was filtered off under reduced pressure, whereby a crude product was formed. The crude product was separated and purified by column chromatography (packing material: Si 1 icage 1 6 0 (Merck product), eluent: dichloromethane / n-hexane) to produce 4.5 g of the target product (yellow solid Product, yield: 99%). The structure of the product obtained was confirmed by 1 Η-N M R spectrum. The measured data is shown below. ! H NMR (CDC 1 3) 5 7. 4 8 (s, benzene ring, 1H), 6 7. 3 9-7. 3 7 (m, benzene it, 6H), 57.48 (t, J = 7.2 Hz, ^ St, 8H), 57.11-6.96 (m, benzene ring, 20H), 5 6.7 3 (dd, J = 18 Hz, 11 Hz, vinyl, 1H), 65.81 (d, J = 18 Hz, vinyl, 1H), 6 5. 2 8 (d, J = 11 H z, ethynyl, 1 H). [Synthesis Examples 1-4] Synthesis of second-generation dendritic aldehyde (represented by the following formula)

於氮氣壓下,添加脫水二甲基乙醯胺(4 0毫升)於3,5 -二溴苯甲醛(0 . 9克)、於合成例1 - 3中製得之第一代樹突 乙烯基化合物(4 · 5克)、醋酸鈀(0· 1 6克)、三苯基膦(0 · 3 7 35 312/發明說明書(補件)/92-11 /92123418 200404833 克)與碳酸鈉水合物(0 · 8 2克)之混合物中。伴隨攪拌過 夜,將生成的混合物加熱至1 1 0 °C。於反應完成後,將反 應混合物冷卻至室溫。伴隨攪拌,將二氯甲烷及水添加至 反應混合物,並且分離因而形成之有機層。以水清洗因而 分離之有機層,且通過硫酸鎂乾燥,並且在減壓下蒸除溶 劑,藉以生成油性粗產物。分離粗產物,且經由管柱層析 純化(填充材料:S i 1 i c a g e 1 6 0 ( M e r c k產品),溶離液: 二氯甲烷/正己烷),藉以生成2. 9克目標產物(黃色固形 物,產率:6 0 % )。經由1 Η - N M R頻譜確認製得產物之結構。 量測數據顯示如下。經由G P C,測得之重均分子量(M w)、 數均分子量(Μη)及分子量分布(M w/Μη)分布為1,6 6 0、 1,6 Ο 5及1 . Ο 3 5。此等數值代表目標高分子具有高純度且呈 現單峰分散態。 !H NMR (CDC13) 610.08 (s,醛,1H),δ7. 94 (d,J = 1 . 6 Hz,苯環,2H), 57.91 (t, J = 1.6Hz,苯環,1H), 67. 54 (s,苯環,6H),δ7.42 (d,J = 8.8 Hz,苯環,8H),δ7·3 卜 7. 17 (m,乙烯基,4H,及苯環,16H),δ7·14-7·11 (m,乙烯基, 4H,及苯環,16H), δ7.08-7.01 (m,苯環,16H,及乙烯 基,4H)。Under nitrogen pressure, dehydrated dimethylacetamide (40 ml) was added to 3,5-dibromobenzaldehyde (0.9 g), and the first-generation dendritic ethylene prepared in Synthesis Examples 1-3 Base compound (4.5 g), palladium acetate (0.16 g), triphenylphosphine (0.33 7 35 312 / Invention Note (Supplement) / 92-11 / 92123418 200404833 g) hydrated with sodium carbonate (0.82 g). With stirring overnight, the resulting mixture was heated to 110 ° C. After the reaction was completed, the reaction mixture was cooled to room temperature. With stirring, dichloromethane and water were added to the reaction mixture, and the organic layer thus formed was separated. The organic layer thus separated was washed with water, and dried over magnesium sulfate, and the solvent was distilled off under reduced pressure, whereby an oily crude product was formed. The crude product was separated and purified by column chromatography (packing material: Si 1 icage 1 6 0 (Merck product), eluent: dichloromethane / n-hexane) to produce 2.9 g of the target product (yellow solid Material, yield: 60%). The structure of the product was confirmed by 1 Η-N M R spectrum. The measured data is shown below. The weight-average molecular weight (Mw), number-average molecular weight (Mη), and molecular weight distribution (Mw / Mη) distribution measured by G PC were 1,6 0, 1, 6, 05, and 1.05. These values indicate that the target polymer has high purity and has a unimodal dispersion state. ! H NMR (CDC13) 610.08 (s, aldehyde, 1H), δ 7.94 (d, J = 1.6 Hz, benzene ring, 2H), 57.91 (t, J = 1.6Hz, benzene ring, 1H), 67 54 (s, benzene ring, 6H), δ7.42 (d, J = 8.8 Hz, benzene ring, 8H), δ7 · 3, 7.17 (m, vinyl, 4H, and benzene ring, 16H), δ7 · 14-7 · 11 (m, vinyl, 4H, and benzene ring, 16H), δ 7.08-7.01 (m, benzene ring, 16H, and vinyl, 4H).

[合成例1 - 5 ]作為3價核心之1,3,5 -苯并三膦酸酯(以下式 表示)之合成 36 312/發明說明書(補件)/92-11 /92123418 200404833 根據由S. K. Deb等人揭示之程序(<1.儿111.(]11611].8〇〇· 1 9 9 7,1 1 9,9 0 7 9 )合成目標產物。特別地,於催化量之苯 曱醯基過氧化物存在下,使均三曱苯(1當量)與N -琥珀醯 亞胺(3當量)於35 °C曱酸甲酯中反應,藉以生成1,3, 5-三 (溴甲基)苯。將亞磷酸三乙酯(6當量)添加於產物(1當 量),並且將混合物加熱至1 2 0 °C。於減壓下移除未反應的 亞磷酸三乙酯,藉以生成目標產物。經由1 Η - N M R頻譜確認 製得產物之結構,且製得的產物確認係為目標產物;即 1,3,5 -苯并三膦酸酯,基於事實為產物之頻譜符合以上文 獻中所揭示者。量測數據顯示如下。 4 NMR (CDC13) δ7·14 (s,苯環,3Η),δ4.01 (q,亞 曱基,12H), 63.12 (d,亞甲基,6Η)’δ1·26 (t,甲基, 18H)。 [合成例1 - 6 ]第三代樹枝狀高分子(以下式(8 )表示)之合 成[Synthesis Examples 1 to 5] Synthesis of 1,3,5-benzotriphosphonate (represented by the following formula) as a trivalent core 36 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833 According to SK The procedure disclosed by Deb et al. (≪ 1.111. () 11611] .800.199.7, 119,9 079) was used to synthesize the target product. In particular, a catalytic amount of phenylhydrazone In the presence of fluorenyl peroxide, mesitylene (1 equivalent) is reacted with N-succinimide (3 equivalents) at 35 ° C methyl acetate to form 1,3,5-tris (bromo Methyl) benzene. Triethyl phosphite (6 equivalents) was added to the product (1 equivalent) and the mixture was heated to 120 ° C. Unreacted triethyl phosphite was removed under reduced pressure, whereby The target product is generated. The structure of the product is confirmed through 1 Η-NMR spectrum, and the product is confirmed to be the target product; that is, 1,3,5-benzotriphosphonate, based on the fact that the spectrum of the product meets the above Disclosed in the literature. The measured data are shown below. 4 NMR (CDC13) δ7 · 14 (s, benzene ring, 3Η), δ4.01 (q, fluorenylene, 12H), 63.12 (d, methylene, 6Η) δ1 · 26 (t, methyl, 18H) [Synthesis Example 1--6]. The third generation dendritic polymer (represented by the following formula (8)) is synthesized

312/發明說明書(補件)/92-11 /92123418 37 200404833 於氮氣廢下,將合成例1 - 4中製得的 (1 . 2 0克)與合成例1 - 5中製得的1,3,5 -毫克)溶解於無水四氫呋喃(28毫升)中 於石蠟液中,7 1毫克)添加於其中,並 下反應1小時。接著,以3 0分鐘之間隔 於石蠟液中,7 1毫克)三次,並且使混 於反應完成後,將少量水添加於其中, 溶劑。將殘餘物溶解於二氣甲烷中,並 使得到的有機層通過硫酸鎂乾燥,並且 劑,藉以生成粗產物。分離粗產物,且經ΐ 充材料:Silicagel 60 (Merck 產品), /正己烷),藉以生成859毫克目標產物 率:72%)。經由1H-NMR 頻譜及 13C-NMR 之結構。量測數據顯示如下。經由GPC 量(Mw)、數均分子量(Μη)及分子量分布 4, 636、4, 431及1.046。此等數值代表 純度且呈現單峰分散態。此外,確認因 枝狀高分子可容易地在室溫溶解於有機 烷、甲苯、Ν -曱基吼咯烷酮或γ - 丁内酯 克/升。 NMR (CDCls) δ7· 55 (s ,醛,3Η), 6Η), 67.43 (s,苯 it , 3H), 57.35 (s, (s,苯環,6H),δ7· 23 (d,J = 8· 4 Hz,苯環 (m,乙烯基,12H,及苯環,48H),δ7· 31以發明說明書(補件)/92-11 /92123418 第二代樹突醛產物 -苯并三膦酸酯(1 5 0 。將氫化鈉(6 0 %, 且使混合物在室溫 ,添加氫化納(6 0 %, 合物反應2小時。 並且在減壓下移除 且以水清洗溶液。 在減壓下移除溶 管柱層析純化(填 溶離液:二氯曱烷 (黃色固形物,產 頻譜確認製得產物 ,測得之重均分子 (Mw/Mn)分布為 目標高分子具有高 而製得的第三代樹 溶劑(例如二氯甲 )中,至少至含量1 δ 7 · 5 2 ( s,苯環, 苯環,1 2 Η ),δ 7 · 2 6 ,24Η),δ7. 16-7. 12 05-6.89 (m,乙稀 38 200404833 基,18H,及苯環,96H), 56.80 (d, J二16 Hz,乙烯基, 1 2H)。 13C NMR (CDCls) 6 1 4 7.4, 1 4 7. 1 , 1 3 8.0,137.7,137. 3, 131. 2, 129. 2, 128. 3, 127.4, 126.6, 124. 4, 123.4, 122.9° [合成例2 - 1 ]作為具分支部分化合物之3,5 -雙(二乙氧基 磷醯基甲基)苯曱醛二甲基乙縮醛(以下式表示)之合成312 / Invention (Supplement) / 92-11 / 92123418 37 200404833 Under nitrogen waste, (1.20 g) obtained in Synthesis Examples 1 to 4 and 1 produced in Synthesis Examples 1 to 5, 3.5 mg) was dissolved in anhydrous tetrahydrofuran (28 ml) in paraffin solution, and 71 mg was added thereto, and reacted for 1 hour. Next, in a paraffin solution at intervals of 30 minutes, 71 mg) three times, and after the reaction was completed, a small amount of water was added to the solvent. The residue was dissolved in digas methane, and the resulting organic layer was dried over magnesium sulfate, and the agent was thereby formed into a crude product. The crude product was isolated and filled with Silicagel 60 (Merck product), n-hexane) to produce 859 mg of the target product (72%). 1H-NMR spectrum and 13C-NMR structure. The measured data is shown below. Via GPC amount (Mw), number average molecular weight (Μη), and molecular weight distribution 4,636, 4,431, and 1.046. These values represent purity and present a unimodal dispersion. In addition, it was confirmed that the dendrimer can be easily dissolved in organic alkane, toluene, N-fluorenylsalrolidone or γ-butyrolactone g / l at room temperature. NMR (CDCls) δ7 · 55 (s, aldehyde, 3Η), 6Η), 67.43 (s, benzene it, 3H), 57.35 (s, (s, benzene ring, 6H), δ7 · 23 (d, J = 8 4 Hz, benzene ring (m, vinyl, 12H, and benzene ring, 48H), δ7 · 31 According to the specification of the invention (Supplement) / 92-11 / 92123418 Second generation dendritic aldehyde product-benzotriphosphonic acid Ester (150). Sodium hydride (60%, and the mixture at room temperature, sodium hydride (60%) was added, and the mixture was reacted for 2 hours. And removed under reduced pressure and the solution was washed with water. Removal under reduced pressure column chromatography for purification (filling and dissolving solution: dichloromethane (yellow solid, yield spectrum confirmed product). The measured weight-average molecular (Mw / Mn) distribution is high for the target polymer. The third-generation tree solvent (such as dichloromethane) prepared, at least to the content of 1 δ 7 · 5 2 (s, benzene ring, benzene ring, 1 2 Η), δ 7 · 2 6, 24Η), δ7. 16-7. 12 05-6.89 (m, ethylene 38 200404833, 18H, and benzene ring, 96H), 56.80 (d, J 2 16 Hz, vinyl, 1 2H). 13C NMR (CDCls) 6 1 4 7.4, 1 4 7. 1, 1 3 8.0, 137.7, 137.3, 131.2, 129.2, 128. 3, 127.4, 126.6, 124. 4, 123.4, 122.9 ° [Synthesis Example 2-1] 3,5-bis (diethoxyphosphoranylmethyl) benzaldehyde dimethylacetal (below) (Expression)

根據由E. D. Barra等人揭示之程序(J· Org. Chem. 2 0 0 1,6 6,5 6 6 4 ),經由五反應步驟合成目標產物。特別地, 於反應步驟1中,藉使用氫化鋁鋰,使三甲基-1,3,5 -三羧 酸酯於四氫呋喃中還原,藉以生成1,3,5 -三(羥甲基)苯。 於反應步驟2中,藉使用四溴化碳及三苯基膦,使羥曱基 基團在乙腈中溴化,藉以生成3,5 -雙(溴甲基)苄基醇。於 反應步驟3中,藉使用二氧化錳(於二氯甲烷中)使羥甲基 基團氧化,藉以生成3,5 -雙(二溴甲基)苯甲醛。於反應步 驟4中,藉使用三乙基膦酸酯使二溴甲基基團膦酸化,藉 以生成3,5 -雙(二乙氧基磷醯基曱基)苯甲醛。於反應步驟 39 312/發明說明書(補件)/92-11 /92123418 200404833 5中,藉使用原曱酸曱酯及蒙脫石Κ - 1 0 (商標名)(於四氯化 碳中)使醛基團乙縮醛化,藉以生成目標產物3, 5 -雙(二乙 氧基磷醯基甲基)苯曱醛二甲基乙縮醛。經由l-NMR且基 於產物之頻譜符合以上文獻中所揭示者之事實,製得的產 物確認係為目標產物,即3,5 -雙(二乙氧基磷醯基曱基)苯 曱醛二曱基乙縮醛。量測數據顯示如下。 ^ NMR (CDC1 3) δ7.28 (brs,苯環,2H),δ7.21 (brs, 苯環,1H), 55.37 (s » 曱川,1H), 64.05-3.98(m,亞甲 基,8H),S3.31(s,甲基,6H),53.15(d,亞甲基,4H), δΐ · 25 (t,甲基,1 2H) ° [合成例2 - 2 ]第三代樹突醛(以下式表示)之合成According to the procedure disclosed by E. D. Barra et al. (J. Org. Chem. 2 0 01, 6 6, 5 6 6 4), the target product was synthesized through five reaction steps. Specifically, in reaction step 1, by using lithium aluminum hydride, trimethyl-1,3,5-tricarboxylic acid ester is reduced in tetrahydrofuran, thereby generating 1,3,5-tris (hydroxymethyl) benzene. . In reaction step 2, by using carbon tetrabromide and triphenylphosphine, the hydroxyfluorenyl group is brominated in acetonitrile to generate 3,5-bis (bromomethyl) benzyl alcohol. In reaction step 3, 3,5-bis (dibromomethyl) benzaldehyde is formed by oxidizing the methylol group with manganese dioxide (in dichloromethane). In reaction step 4, the dibromomethyl group is phosphorylated using triethylphosphonate to form 3,5-bis (diethoxyphosphofluorenylfluorenyl) benzaldehyde. In reaction step 39 312 / Invention specification (Supplement) / 92-11 / 92123418 200404833 5, the use of orthoacetate and montmorillonite K-1 0 (trade name) (in carbon tetrachloride) The aldehyde group is acetalized to produce a target product of 3, 5-bis (diethoxyphosphoniummethyl) benzaldehyde dimethylacetal. Through l-NMR and based on the fact that the spectrum of the product conforms to those disclosed in the above literature, the product obtained is confirmed to be the target product, that is, 3,5-bis (diethoxyphosphatinofluorenyl) phenylcarbaldehyde Fluorenyl acetal. The measured data is shown below. ^ NMR (CDC1 3) δ7.28 (brs, benzene ring, 2H), δ7.21 (brs, benzene ring, 1H), 55.37 (s »Takigawa, 1H), 64.05-3.98 (m, methylene, 8H), S3.31 (s, methyl, 6H), 53.15 (d, methylene, 4H), δΐ · 25 (t, methyl, 1 2H) ° [Synthesis Example 2-2] The third generation tree Synthesis of aldehyde (represented by the following formula)

40 312/發明說明書(補件)/92-11 /92123418 200404833 於氮氣壓下,將合成例1 - 4中製得之第二代樹突醛(6 2 8 毫克)及合成例2 - 1中製得之3,5 -雙(二乙氧基磷醯基曱基) 苯曱醛二甲基乙縮醛(102毫克)溶解於脫水四氫呋喃中 (10毫升)。將第三丁氧基鉀(61毫克)添加於其中,並且使 混合物於室溫下反應2小時。接著,將濃氫氣酸(1毫升) 添加於其中,並且使生成的混合物於室溫下反應1 8小時。 於反應完成後,以飽和水性碳酸氫鈉溶液中和反應混合 物。以飽和鹽水清洗所形成的有機層,且通過硫酸鎂乾燥, 並且在減壓下蒸除溶劑,藉以生成粗產物。分離粗產物, 且經由管柱層析純化(填充材料:S i 1 i c a g e 1 6 0 ( M e r c k產 品),溶離液:二氯甲烷/正己烷),藉以生成532毫克目標 產物(黃色固形物,產率:82%)。經由1H-NMR頻譜確認製 得產物之結構。量測數據顯示如下。經由GPC,測得之重 均分子量(Mw)、數均分子量(Μη)及分子量分布(Mw/Mn)分布 為3, 547、3,422及1.036。此等數值代表目標高分子具有 高純度且呈現單峰分散態。 NMR (CDC 1 3 ) 5 9.9 6 (s,醛,1H),5 7. 8 2 (brs,苯 環,3 Η),6 7. 5 5 - 7. 5 4 (m,苯環,6 Η),5 7.4 5 (s,苯環, 8H),5 7.4 0 (s » 苯環,4H),5 7.3 3 (d » J = 8.8Hz,苯環, 16H),δ7·24-6·97(πι,乙烯基及苯環,116Η),5 6.9 2 (d » J=16 Hz ,乙烯基,8H)。 [合成例2 - 3 ]第四代樹枝狀高分子(以下式表示)之合成 41 312/發明說明書(補件)/92-11 /92123418 20040483340 312 / Instruction of the Invention (Supplement) / 92-11 / 92123418 200404833 Under nitrogen pressure, the second-generation dendritic aldehyde (6 2 8 mg) prepared in Synthesis Examples 1-4 and Synthesis Example 2-1 The obtained 3,5-bis (diethoxyphosphatinofluorenyl) benzaldehyde dimethylacetal (102 mg) was dissolved in dehydrated tetrahydrofuran (10 ml). Potassium tert-butoxide (61 mg) was added thereto, and the mixture was reacted at room temperature for 2 hours. Next, concentrated hydrogen acid (1 ml) was added thereto, and the resulting mixture was allowed to react at room temperature for 18 hours. After the reaction was completed, the reaction mixture was neutralized with a saturated aqueous sodium bicarbonate solution. The formed organic layer was washed with saturated brine, and dried over magnesium sulfate, and the solvent was distilled off under reduced pressure, thereby generating a crude product. The crude product was separated and purified by column chromatography (packing material: Si 1 icage 1 6 0 (Merck product), eluent: dichloromethane / n-hexane) to produce 532 mg of the target product (yellow solid, Yield: 82%). The structure of the obtained product was confirmed by 1H-NMR spectrum. The measured data is shown below. The weight-average molecular weight (Mw), number-average molecular weight (Mη), and molecular weight distribution (Mw / Mn) distribution measured by GPC were 3,547, 3,422, and 1.036. These values indicate that the target polymer has high purity and has a unimodal dispersion state. NMR (CDC 1 3) 5 9.9 6 (s, aldehyde, 1H), 5 7. 8 2 (brs, benzene ring, 3 Η), 6 7. 5 5-7. 5 4 (m, benzene ring, 6 Η ), 5 7.4 5 (s, benzene ring, 8H), 5 7.4 0 (s »benzene ring, 4H), 5 7.3 3 (d» J = 8.8Hz, benzene ring, 16H), δ7 · 24-6 · 97 (πm, vinyl and benzene ring, 116Η), 5 6.9 2 (d »J = 16 Hz, vinyl, 8H). [Synthesis Example 2-3] Synthesis of the fourth generation dendrimer (represented by the following formula) 41 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833

於氮氣壓下,將合成2 - 2中製得的第三代樹突醛產物 (3 1 8毫克)與合成例1 - 5中製得的1,3,5 -苯并三膦酸酯(2 0 毫克)溶解於無水四氫呋喃(5毫升)中。將第三丁氧基鉀 (1 4毫克)添加於其中,並且使混合物於室溫下反應2小 42 312/發明說明書(補件)/92-11 /92123418 200404833 時。於反應完成後,將濃氫氯酸(1毫升)添加於其中。將 二乙醚添加於其中,並且分離所形成的有機層。接續以飽 和水性碳酸氫納溶液及飽和鹽水清洗所形成的有機層,且 通過硫酸鎂乾燥,並且在減壓下蒸除溶劑,藉以生成粗產 物。分離粗產物,且經由管柱層析純化(填充材料: Silicagel 60 (Merck產品),溶離液:二氯甲烧/正己烧), 藉以生成2 2 4毫克目標產物(黃色固形物,產率:7 0 %)。經 由1H-NMR,可在6至8ppm之區域觀察到寬波峰。經由GPC, 測得之重均分子量(Mw)、數均分子量(Μη)及分子量分布 (Mw/Mn)分布為7, 679、7, 161及1.072。此等數值代表目 標高分子具有高純度且呈現單峰分散態。 〈實施例1 &gt;有機開關電晶體元件 製備含有本發明樹枝狀高分子之可逆交錯結構之有機 開關電晶體元件。圖1係示意地顯示此電晶體之斷面。 如圖1中所示,含有本發明樹枝狀高分子之可逆交錯結 構之有機薄膜開關電晶體包含電絕緣基板1 (通常由玻璃 形成)、閘極電極2 (設於基板上)、閘極絕緣層3 (形成於閘 極電極2上)、汲極電極4及源極電極5 (形成於閘極絕緣 層上)以及有機半導體層6 (覆蓋此等薄膜)。閘極電極2係 由T a形成,且沒極電極4及源極電極5係由A u形成。有 機半導體層6係形成自第三代樹枝狀高分子(於合成例1 - 6 中合成,且具電洞傳輸及電子傳輸傳導性)(以式(8 )表示)。 根據以下方式製備有機薄膜開關電晶體。首先,經由光 罩氣體沉積T a於電絕緣基板1上,俾形成閘極電極2。使 43 312/發明說明書(補件)/92-11 /92123418 200404833 閘極電極2表面氧化,藉以形成閘極絕緣層3。接著,經 由光罩氣體沉積Au於閘極絕緣層上,俾形成汲極電極4 及源極電極5。經由噴墨塗覆法,將已於實施例1 - 6中合 成之樹枝狀高分子(式(8 ))施用於其上,藉以形成有機半導 體層6。通道長度為12微米。 有機薄膜開關電晶體之載體遷移率(經由飛行時間法 (time-of-flight method)測定)經發現為 6xl0-1 c m2 V_ 1 s_ 1。開啟/關閉電流比例(經由評估電流-電壓特性而 得)經發現係為1 0 6之水準。得到的載體遷移率及開啟/關 閉電流比例亦相當於目前所用含a - S i之類似電晶體。 與以下所示比較例1之電晶體有關者之結果顯示有機薄 膜開關電晶體之效能可透過使用本發明樹枝狀高分子而徹 底地提高。 〈比較例 1 &gt; 除了使用低聚噻吩形成有機半導體層外,重複實施例1 之程序,藉以製造使用由低聚噻吩形成之半導體層之有機 薄膜開關電晶體。 有機薄膜開關電晶體之載體遷移率經發現為8 . 5 X 1 0_3 c m2 V _1 s_ 1,且開啟/關閉電流比例經發現係為1 0 3之水準。 〈實施例2 &gt;發光元件 製備含有本發明樹枝狀高分子之發光元件。圖2係示意 地顯示此元件。 如圖2中所示,含有本發明樹枝狀高分子之發光元件包 含透明玻璃基板11(用於製造發光元件)、電極12(形成於 44 312/發明說明書(補件)/92-11/92123418 200404833 其上)、電洞注射層1 3及樹枝狀高分子層(電洞傳輸、電子 傳輸、發光)1 4及電極1 5,其中層1 3及1 4係設置於電極 1 2與1 5間。 根據以下方式製備發光元件。首先,將I T 0 (氧化銦錫) 形成在用於製造發光元件之玻璃基板1 1上,藉以形成用作 正電極之電極1 2。電洞注射層1 3係以薄膜形式,透過室 溫下之旋轉塗覆法,自聚(伸乙基二氧基噻吩)與聚(苯乙烯 磺酸)鈉之混合物提供。薄膜之厚度為5 0毫微米。樹枝狀 高分子層(電洞傳輸、電子傳輸、發光)1 4係以薄膜形式, 透過室溫下之旋轉塗覆法,自已於實施例1 - 6中合成之樹 枝狀高分子(實施例(8 ))於四氫呋喃中的溶液。薄膜之厚度 為5 0毫微米。接著,將鋁/鋰(9 : 1 )合金氣體沉積,藉以 形成作為負電極之電極1 5。因而製得發光元件。 經由施加預定電壓使發光元件活化,且發出光線之初亮 度經測得為1,5 0 0 c d / m2。降低初亮度至一半數值所需之 時間經測定為3,0 0 0小時或更長。發出的光線具峰波長為 4 5 0毫微米。 與以下所示比較例2之電晶體有關者之結果顯示元件效 能可透過使用本發明樹枝狀高分子而徹底地提高。 〈比較例2 &gt; 除了使用聚(己基噻吩)形成發光層外,重複實施例2之 程序,藉以製造具相同結構之發光元件。 經由施加預定電壓使發光元件活化,且發出光線之初亮 度經測得為8 0 0 c d / m2。降低初亮度至一半數值所需之時 45 312/發明說明書(補件)/92-11 /92123418 200404833 間經測定為8 0 0小時。 〈實施例3 &gt;有機太陽能電池元件 製備含有本發明樹枝狀高分子之有機太陽能電池元 件。圖3係示意地顯示此元件。 如圖3中所示,含有本發明樹枝狀高分子之有機太陽能 電池元件包含透明玻璃基板2 1、電極2 2 (形成於基板上)、 電極2 4及設置於電極2 2與2 4間之樹枝狀高分子層2 3。 根據以下方式製備有機太陽能電池元件。首先,將I TO 形成在玻璃基板2 1上。樹枝狀高分子層(電洞傳輸、電子 傳輸、發光)2 3係以薄膜形式,透過室溫下之旋轉塗覆法, 自含有銅酞花青與已於合成例1 - 6 (式(8 ))樹枝狀高分子 (電洞傳導、電子傳導)於四氫呋喃之溶液之液體混合物提 供。薄膜之厚度為5 0毫微米。接著,使銀氣體沉積,藉以 形成電極2 4。因而製得如圖3所示之有機太陽能電池元件。 以光線(已自鎢燈提供,且4 0 0毫微米或較低之光束經 切割)照射有機太陽能電池元件。初密度轉換效率經測得無 法令人感到滿意的2 . 1至2. 7 %。 與以下所示比較例3之元件有關者之結果顯示元件特性 可透過使用本發明樹枝狀高分子而徹底地提高。 〈比較例3 &gt; 製備具圖4中示意顯示的結構之有機太陽能電池元件。 如圖4中所示,比較例3之有機太陽能電池元件包含透 明玻璃基板1 (Π、電極1 0 2 (形成於基板上)、產電層1 0 3 (銅 酞花青形成)、導電層1 0 4 (六吖三伸苯基衍生物)、電洞傳 46 312/發明說明書(補件)/92-11 /92123418 200404833 輸層1 0 5 (由聚(伸乙基二氧基噻吩)與聚(苯乙烯磺酸)鈉 之混合物提供)以及電極1 0 6,此等元件係依此順序。 以光線(已自鎢燈提供,且經切割之4 0 0毫微米或較低 之光束照射有機太陽能電池元件。初密度轉換效率經測得 為 1 . 7 至 2 · 0 %。 如上述,根據本發明,可提供適合作為有機半導體材料 之新穎的樹枝狀高分子,其在有機溶劑中具高溶解度;其 是安定的,即不易受外來抑制劑(例如氧及水)影響;且及 展現等向及非常高的載體傳導性。此外,可透過簡單製程 而製得需要載體傳導性且具明顯高載體傳導性之電子裝置 元件。 【圖式簡單說明】 圖1示意地顯示根據本發明實施例1之有機薄膜開關電 晶體之斷面圖。 圖2為顯示根據本發明實施例2之發光元件的示意圖。 圖3為顯示根據本發明實施例3之有機太陽能電池元件 的示意圖。 圖4為顯示根據比較例3之有機太陽能電池元件的示意 圖。 (元件符號說明) 1 電絕緣基板 2 閘極電極 3 閘極絕緣層 4 汲極電極 47 312/發明說明書(補件)/92-11 /92123418 200404833 5 源極電極 6 有機半導體層 11 透明玻璃基板 12 電極 13 電洞注射層 14 樹枝狀高分子層 15 電極 2 1 透明玻璃基板 2 2 電極 23 樹枝狀高分子層 2 4 電極 10 1 透明玻璃基板 10 2 電極 103 產電層 104 導電層 10 5 電洞傳輸層 10 6 電極 48Under nitrogen pressure, the third-generation dendritic aldehyde product (3 18 mg) obtained in Synthesis 2-2 and the 1,3,5-benzotriphosphonic acid ester (1 20 mg) was dissolved in anhydrous tetrahydrofuran (5 ml). Potassium tert-butoxide (14 mg) was added thereto, and the mixture was reacted at room temperature for 2 hours 42 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833. After the reaction was completed, concentrated hydrochloric acid (1 ml) was added thereto. Diethyl ether was added thereto, and the formed organic layer was separated. The formed organic layer was successively washed with a saturated aqueous sodium bicarbonate solution and saturated brine, and dried over magnesium sulfate, and the solvent was distilled off under reduced pressure to produce a crude product. The crude product was isolated and purified by column chromatography (packing material: Silicagel 60 (Merck product), eluent: dichloromethane / n-hexane) to produce 224 mg of the target product (yellow solid, yield: 70%). By 1H-NMR, a broad peak was observed in a region of 6 to 8 ppm. The weight-average molecular weight (Mw), number-average molecular weight (Mη), and molecular weight distribution (Mw / Mn) distribution measured by GPC were 7, 679, 7, 161, and 1.072. These values indicate that the target polymer has high purity and is in a unimodal dispersion state. <Example 1> Organic switching transistor element An organic switching transistor element containing a reversible staggered structure of the dendrimer of the present invention was prepared. Fig. 1 schematically shows a cross section of the transistor. As shown in FIG. 1, the organic thin film switch transistor containing the reversible staggered structure of the dendrimer of the present invention includes an electrically insulating substrate 1 (usually formed of glass), a gate electrode 2 (provided on the substrate), and gate insulation. A layer 3 (formed on the gate electrode 2), a drain electrode 4 and a source electrode 5 (formed on the gate insulating layer), and an organic semiconductor layer 6 (covering these thin films). The gate electrode 2 is formed of Ta, and the non-electrode electrode 4 and the source electrode 5 are formed of Au. The organic semiconductor layer 6 is formed from a third-generation dendrimer (synthesized in Synthesis Examples 1 to 6 and having hole-transport and electron-transmission conductivity) (represented by the formula (8)). An organic thin film switching transistor was prepared as follows. First, T a is deposited on an electrically insulating substrate 1 through a mask gas to form a gate electrode 2. The surface of the gate electrode 2 is oxidized to form the gate insulating layer 3 by oxidizing 43 312 / Invention (Supplement) / 92-11 / 92123418 200404833. Then, Au is deposited on the gate insulating layer through a mask gas to form a drain electrode 4 and a source electrode 5. The dendrimer (formula (8)) synthesized in Examples 1 to 6 was applied thereon by an inkjet coating method to form an organic semiconductor layer 6. The channel length is 12 microns. The carrier mobility of the organic thin film switching transistor (measured by the time-of-flight method) was found to be 6xl0-1 c m2 V_ 1 s_ 1. The on / off current ratio (obtained by evaluating the current-voltage characteristics) was found to be at a level of 1.06. The obtained carrier mobility and the on / off current ratio are also equivalent to similar transistors containing a-S i currently used. The results related to the transistor of Comparative Example 1 shown below show that the performance of the organic thin film switching transistor can be completely improved by using the dendrimer of the present invention. <Comparative Example 1> The procedure of Example 1 was repeated except that an organic semiconductor layer was formed using oligothiophene to manufacture an organic thin film switching transistor using a semiconductor layer formed from oligothiophene. The carrier mobility of the organic thin film switching transistor was found to be 8.5 X 1 0_3 cm 2 V _1 s_ 1 and the on / off current ratio was found to be a level of 103. <Example 2> Light-emitting element A light-emitting element containing the dendrimer of the present invention was prepared. Figure 2 shows this element schematically. As shown in FIG. 2, the light-emitting element containing the dendrimer of the present invention includes a transparent glass substrate 11 (for manufacturing a light-emitting element), an electrode 12 (formed in 44 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833 atop), hole injection layer 13 and dendritic polymer layer (hole transport, electron transport, light emission) 14 and electrode 15, of which layers 1 3 and 1 4 are arranged on electrodes 1 2 and 1 5 between. A light-emitting element was prepared in the following manner. First, I T 0 (indium tin oxide) is formed on a glass substrate 11 for manufacturing a light-emitting element, thereby forming an electrode 12 serving as a positive electrode. The hole injection layer 13 is provided in the form of a thin film through a spin coating method at room temperature, and is provided from a mixture of poly (ethylene dioxythiophene) and poly (styrene sulfonate) sodium. The thickness of the film is 50 nm. The dendrimer layer (hole transport, electron transport, light emission) 14 is a dendrimer synthesized in Examples 1 to 6 in a thin film form through a spin coating method at room temperature (Example ( 8)) solution in tetrahydrofuran. The thickness of the film is 50 nm. Next, an aluminum / lithium (9: 1) alloy gas is deposited to form an electrode 15 as a negative electrode. Thus, a light-emitting element was prepared. The light-emitting element was activated by applying a predetermined voltage, and the initial brightness of the emitted light was measured to be 1,500 c d / m2. The time required to reduce the initial brightness to half the value was determined to be 3,000 hours or more. The emitted light has a peak wavelength of 450 nm. The results related to the transistor of Comparative Example 2 shown below show that the device performance can be thoroughly improved by using the dendrimer of the present invention. <Comparative Example 2> The procedure of Example 2 was repeated except that the light-emitting layer was formed using poly (hexylthiophene) to manufacture a light-emitting element having the same structure. The light-emitting element was activated by applying a predetermined voltage, and the initial brightness of the emitted light was measured to be 8 0 c d / m2. The time required to reduce the initial brightness to half the value 45 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833 was measured as 800 hours. <Example 3> Organic solar cell element An organic solar cell element containing the dendrimer of the present invention was prepared. Figure 3 shows this element schematically. As shown in FIG. 3, the organic solar cell element containing the dendrimer of the present invention includes a transparent glass substrate 21, an electrode 2 2 (formed on the substrate), an electrode 24, and an electrode disposed between the electrodes 2 2 and 24. 2. Dendritic polymer layer 2 3. An organic solar cell element was prepared as follows. First, I TO is formed on a glass substrate 21. The dendrimer layer (hole transport, electron transport, light emission) 2 3 is a thin film, which is prepared by spin coating at room temperature. It contains copper phthalocyanine and has been synthesized in Examples 1-6 (Formula (8 )) The dendrimer (hole conduction, electron conduction) is provided in a liquid mixture of a solution of tetrahydrofuran. The thickness of the film is 50 nm. Next, silver gas is deposited to form electrodes 24. Thus, an organic solar cell element as shown in FIG. 3 was prepared. The organic solar cell element is illuminated with light (provided from a tungsten lamp and a 400 nm or lower beam is cut). The initial density conversion efficiency was measured to be unsatisfactory from 2.1 to 2.7%. The results relating to the device of Comparative Example 3 shown below show that the device characteristics can be thoroughly improved by using the dendrimer of the present invention. <Comparative Example 3> An organic solar cell element having a structure schematically shown in Fig. 4 was prepared. As shown in FIG. 4, the organic solar cell element of Comparative Example 3 includes a transparent glass substrate 1 (Π, electrodes 102 (formed on the substrate), a power generation layer 103 (formed from copper phthalocyanine), and a conductive layer. 1 0 4 (hexaacryl triphenylene derivative), hole pass 46 312 / invention specification (supplement) / 92-11 / 92123418 200404833 transport layer 1 0 5 (by poly (ethylene dioxythiophene) Provided with a mixture of sodium poly (styrene sulfonate) and electrodes 106, these elements are in this order. Light (provided from a tungsten lamp, and a cut beam of 400 nm or lower) Organic solar cell elements were irradiated. The initial density conversion efficiency was measured to be 1.7 to 2.0%. As described above, according to the present invention, a novel dendrimer suitable for use as an organic semiconductor material can be provided in an organic solvent. It has high solubility; it is stable, that is, it is not susceptible to foreign inhibitors (such as oxygen and water); and exhibits isotropic and very high carrier conductivity. In addition, it can be made by a simple process that requires carrier conductivity and Electronic device components with significantly high carrier conductivity [Brief description of the drawings] Fig. 1 schematically shows a cross-sectional view of an organic thin film switch transistor according to Embodiment 1 of the present invention. Fig. 2 is a schematic diagram showing a light-emitting element according to Embodiment 2 of the present invention. Schematic diagram of an organic solar cell element according to Inventive Example 3. Fig. 4 is a schematic diagram showing an organic solar cell element according to Comparative Example 3. (Element Symbol Description) 1 Electrically insulating substrate 2 Gate electrode 3 Gate insulating layer 4 Drain electrode 47 312 / Inventory (Supplement) / 92-11 / 92123418 200404833 5 Source electrode 6 Organic semiconductor layer 11 Transparent glass substrate 12 Electrode 13 Hole injection layer 14 Dendrimer layer 15 Electrode 2 1 Transparent glass substrate 2 2 Electrode 23 Dendrimer layer 2 4 Electrode 10 1 Transparent glass substrate 10 2 Electrode 103 Power generation layer 104 Conductive layer 10 5 Hole transport layer 10 6 Electrode 48

312/發明說明書(補件)/92-11 /92123418312 / Invention Specification (Supplement) / 92-11 / 92123418

Claims (1)

200404833 拾、申請專利範圍: 1 . 一種具分支結構之樹枝狀高分子,該分支結構包含具 分支部分之重複單元,其特徵在於該高分子於其末端具芳 族胺部分,且該重複單元係由以式(1)表示之伸苯基伸乙烯 基部分所形成:200404833 The scope of patent application: 1. A branched polymer having a branched structure, the branched structure comprising a repeating unit with a branched portion, characterized in that the polymer has an aromatic amine portion at its end, and the repeating unit is Formed by a phenylene vinyl group represented by formula (1): 幻⑴ % 其係重複一次或複數次。 2 .如申請專利範圍第1項之樹枝狀高分子,其中該芳族 胺部分包含至少一種以式(2)表示之物質: —Αι^—Ν Μ (2)Phantom% It is repeated one or more times. 2. The dendrimer according to item 1 of the application, wherein the aromatic amine moiety comprises at least one substance represented by formula (2): —Αι ^ —NM (2) 其中 Arx代表單鍵或二價芳族基團,且Ar!及Ar2中之 每一者代表單價芳族基團。 3 ·如申請專利範圍第2項之樹枝狀高分子,其中含於該 芳族胺中之該二價芳族基團係為伸苯基基團或伸萘基基 團,且該單價芳族基團係獨立地選自以式(3)表示之基團:Where Arx represents a single bond or a divalent aromatic group, and each of Ar! And Ar2 represents a monovalent aromatic group. 3. The dendrimer according to item 2 of the application, wherein the divalent aromatic group contained in the aromatic amine is a phenylene group or a naphthyl group, and the monovalent aromatic group is The group is independently selected from the group represented by formula (3): 其中1^及R2中之每一者係獨立地選自氫原子、C1-C4 烷基基團及C1-C4烷氧基基團。 49 312/發明說明書(補件)/92-11 /92123418 200404833 4.如申請專利範圍第1項之樹枝狀高分子,其中適合作 為該分支結構起始點之該重複單元係進一步結合於適合 作為核心之中心部分。 5 .如申請專利範圍第4項之樹枝狀高分子,其中該核心 係選自以式(4 )表示之部分:Each of R 1 and R 2 is independently selected from a hydrogen atom, a C1-C4 alkyl group, and a C1-C4 alkoxy group. 49 312 / Invention Specification (Supplement) / 92-11 / 92123418 200404833 4. If the dendrimer in the first scope of the patent application, the repeating unit suitable as the starting point of the branch structure is further combined with suitable as The central part of the core. 5. The dendrimer according to item 4 of the application, wherein the core is selected from the group represented by formula (4): 6 .如申請專利範圍第1項之樹枝狀高分子,其係為樹枝 狀分子。 7 .如申請專利範圍第6項之樹枝狀高分子,其中該樹枝 狀分子為第二代或較高代者。 8 . —種電子裝置元件,其特徵在於使用如申請專利範圍 第1至7項中所述之樹枝狀高分子。 9 .如申請專利範圍第8項之電子裝置元件,其係為電荷 傳輸裝置元件。 1 0 .如申請專利範圍第8項之電子裝置元件,其係為開關 電晶體元件。 1 1 ·如申請專利範圍第8項之電子裝置元件,其係為發光 裝置元件。 1 2 .如申請專利範圍第8項之電子裝置元件,其係為光電 轉換裝置元件。 50 312/發明說明補件)/92-11 /921234186. The dendrimer according to item 1 of the patent application scope, which is a dendrimer. 7. The dendrimer according to item 6 of the application, wherein the dendrimer is a second or higher generation. 8. An electronic device component characterized by using a dendrimer as described in claims 1 to 7 of the scope of patent application. 9. An electronic device element according to item 8 of the scope of patent application, which is a charge transfer device element. 10. The electronic device element according to item 8 of the patent application scope is a switching transistor element. 1 1 · The electronic device element according to item 8 of the patent application scope is a light emitting device element. 1 2. The electronic device element according to item 8 of the scope of patent application is a photoelectric conversion device element. 50 312 / Inventory Supplement) / 92-11 / 92123418
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