200404340 玖、發明說明 (發明說明應敘明：發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明） I：發明戶斤屬之技術領域3 政府權利 美國政府依No. S33615-98-1-5164 DARPA授權享有本 5 發明的權利。 優先權主張 本申請案依35 U.S.C· § 119條款，請求2002年1月11曰 提出之No. 60/347,850，60/348,259，60/348,258及2002年9月 4曰提出之No. 60/408,235等各暫時申請案的權益，該各前 10 案的内容併此附送。 發明領域 本發明係有關於使用犧牲層在一母基材上製造各系統 ，再由該母基材上分離該等系統的技術。更具體而言，本 發明係有關以高溫處理來穩定犧牲層及製造高性能基材的 15 技術。 L先前技術3 發明背景 目前針對在絕緣基材及耐用且重量輕又可撓的基材， 例如金屬、陶瓷、玻璃及塑膠薄片上來製成之微電子、光 20 電子、光生伏打、生物系統、光學系統、及微機電系統等 ，乃具有可觀且逐增的需求。針對該等系統被設在甚大基 材上例如顯示之用途，亦有極大需求。在該等基材上來製 造高性能系統係非常富有挑戰性，因為該等基材會具有難 以接受的表面粗度，並會在製造流程中時常呈現熱及機械 6 200404340 玖、發明說明 的不穩定性。此外，在該等系統要製設於大基材的情況下 ’其刻製工具極為昂責或根本不存在。且，直接在非習用 基材上來製設高品質的微電子、光電子、生物系統、光生 伏打、光學系統、及微機電系統等，將會受到該基材本身 5 所能承受的最高處理溫度之限制。由於此等限制，令其事 實上不可能達到如同在一般習用基材如矽晶圓上可見的性 企圖解決此問題的許多研究曾使用母基材及分離層來 構建元件和系統，嗣再將之由母基材分離而佈設於一永久 ίο 基材上。有許多的團隊曾致力於分離技術的研發，但都在 其之可利用性上有所限制。200404340 发明 Description of the invention (The description of the invention should state: the technical field, prior art, content, implementation, and drawings of the invention are briefly explained) I: the technical field of the inventor 3 Government Rights US Government No. S33615- 98-1-5164 DARPA grants the rights to this invention. Claim for Priority This application is entitled to No. 60 / 347,850, 60 / 348,259, 60 / 348,258 and September 4, 2002 No. 60 / 408,235 filed on January 11, 2002, in accordance with Article 35 USC · § 119 The content of each of the first 10 cases will be attached here after waiting for the rights of each provisional application. FIELD OF THE INVENTION The present invention relates to a technology for manufacturing systems using a sacrificial layer on a mother substrate, and then separating the systems from the mother substrate. More specifically, the present invention relates to a technique for stabilizing a sacrificial layer by high-temperature processing and manufacturing a high-performance substrate. L Prior Art 3 Background of the Invention Currently, microelectronics, optoelectronics, photovoltaics, and biological systems are made on insulating substrates and durable, lightweight and flexible substrates, such as metal, ceramics, glass, and plastic sheets. , Optical systems, and micro-electromechanical systems, etc., have considerable and increasing demand. There is also a great demand for the use of these systems on very large substrates such as displays. It is very challenging to manufacture high-performance systems on these substrates, because these substrates will have unacceptable surface roughness, and will often show thermal and mechanical during the manufacturing process. 6 200404340 玖, unstable description of the invention Sex. In addition, in the case where these systems are to be fabricated on large substrates, their tooling is extremely responsible or non-existent. Moreover, the production of high-quality microelectronics, optoelectronics, biological systems, photovoltaics, optical systems, and micro-electromechanical systems directly on non-conventional substrates will be subject to the highest processing temperature that the substrate itself can withstand5 Restrictions. Due to these restrictions, it is virtually impossible to achieve the same sexual behavior as seen on a conventional conventional substrate such as a silicon wafer. Many studies have used mother substrates and separation layers to build components and systems. It is separated from the mother substrate and laid on a permanent substrate. Many teams have worked on the development of separation technologies, but all have limitations in their usability.
Shimoda 及 Inoue 等人（見 T. Shimoda，S· Inoue 之 “Surface free technology laser annealing (SUFTLA)，，’ International Electron Device Meeting (IEDM) Tech. Dig., 15 2289-2292 (1999)曾在一物理性分離研究中使用一 a-Si:H來 作為犧牲（釋離）層。但該方法不能使用於400°C以上溫度的 製程中（因為氫會從a-Si:H中逸出）。該方法亦需要有透明 的母基材以供雷射束射入。 而 T.J. Rinke等人（見T.J. Rinke，R.B· Bergmann，及 J.H· 20 Werner 等人 “Quasi_monocrystalline Silicon for Thin FilmShimoda and Inoue et al. (See T. Shimoda, S. Inoue, "Surface free technology laser annealing (SUFTLA)," International Electron Device Meeting (IEDM) Tech. Dig., 15 2289-2292 (1999) A-Si: H is used as a sacrificial (release) layer in sexual separation studies. However, this method cannot be used in processes above 400 ° C (because hydrogen will escape from a-Si: H). The The method also requires a transparent mother substrate for laser beam injection. TJ Rinke et al. (See TJ Rinke, RB Bergmann, and JH. 20 Werner et al. "Quasi_monocrystalline Silicon for Thin Film"
Devices” Appl. Phys. A 68 pp· 705〜707 (1999))則有另一 種分離方法。該方法係使用電化學餘刻的矽來作為分離層 ，但其僅能使用矽來作為母基材，且該母基付在需要用來 造成該分離層的電化學蝕刻步驟中會被部份^損耗。 7 200404340 玖、發明說明 以往亦曾有許多的團隊使用矽晶圓作為母基材而針對 該所謂的SOI技術來進行可觀的研究。該等研究内容乃各 依其特性而被稱為 SIMOX，Bonding/thinning，或 Smart-cut 。但其尺寸及材料皆具有單晶矽晶圓的限制（例請參見 5 MRS Bulletin 的“Material Research Society” Volume 23, Number 12, 1998年 12月）。Devices ”Appl. Phys. A 68 pp · 705 ~ 707 (1999)) has another separation method. This method uses electrochemically prepared silicon as the separation layer, but it can only use silicon as the mother substrate. In addition, the mother substrate is partially lost in the electrochemical etching step that is required to cause the separation layer. 7 200404340 玖, invention description Many teams have used silicon wafers as the mother substrate in the past. The so-called SOI technology is used to conduct considerable research. These research contents are called SIMOX, Bonding / thinning, or Smart-cut according to their characteristics. However, their size and materials have the limitations of single crystal silicon wafers ( (For example, see "Material Research Society" Volume 23, Number 12, December 1998, 5 MRS Bulletin).
Asano及Kinoshita亦曾研究一種分離方法來將TFTs設 在一塑膠基材上。但此方法需要使用玻璃作為母基材，然 後將該玻璃蝕刻（溶解）除掉以便釋離。由於其使用低溫玻 10 璃，故該方法會受限於可供處理的溫度範圍；且當然，該 等母板不能再使用。 其它的分離技術亦包括分離層的機械式分離，如以下 各專利前案所揭：No· 5,811，348、6,486,041、6,214,701、 6,225，192、6，159,824、5,854，123等美國專利，及DE 198 15 41 430 Al、DE 00993 029 A3、EP 0 797 258等各專利案。 藉一分離層的剝落來釋離則揭露於No. 6,372,608美國專利 中。 儘管曾有過這麼多對分離層的研發成果，但迄今針對 能在非一般基材上來輕易地製成該等系統及裝置的技術仍 20 舊有其需要。本發明乃專門為回應滿足上述在非傳統基材 上來製造高性能系統的需求，而提供下述的方法：使用一 穩定化的犧牲層在一 “母”基材上之構建層中製設所需的系 統，身該系統由母基材釋離，並同時控制任何在該製造/ 釋離程序中所產生的應力。本發明可供大面積、高品質的 8 200404340 玖、發明說明 系統被製設在可承受高溫的母板上，例如炼凝的二氧化矽 、石英或矽片，然後再移轉至非傳統性的，甚至不能承受 高溫的基材上。該移轉的系统亦可被包封來改善堅固性、 機械應力阻抗性、及環境穩定性。若最後定位係在一撓性 5基材上，該最終結構的系統則可被設在或靠近中立彎曲平 面上，俾使該最終結構的任何撓曲所產生的機械應力能減 到最小。若在極大的最終基材之情況下，則所有的刻製問 題將可用併組方式來克服。於本發明的另一變化例中，其 最終基材亦可在分離之前被設置在該系統上，而來免除前 10 述移轉至該最終基材上的步驟。 圖式簡單說明 第1圖示出以一適當的塗層技術在—硬層且平滑表面 的母基材上沈積一犧牲層； 第2圖示出在犧牲層上覆設一覆蓋層； 15 帛3圖示出在該覆蓋層上製成-功能系統； 第4圖示出姓刻出包圍該等功能系統構件的溝槽深入 至該第一犧牲層，並藉習知技術例如頂面削除法 來以第一犧牲材料填滿該等溝槽； 第5a(截面)圖及5b(頂視)圖乃示出一聚合物層的覆設 20 及貫孔的形成； 第6a(截面）圖及6b(頂視）圖乃示出第：犧牲㈣0 除； 聚合物基材上製成 第7圖示出該犧牲層被丟；佘而在一 一系統如第8圖所示； 9 200404340 玖、發明說明 第8a圖為本發明之分離系統的一例； 第8b圖示出一實際的分離系統。在本例中，TFTs元件 係具有一撓性的塑膠最終基材； 第9圖示出本發明用來製成一‘‘智慧電路板，，的應用， 5其含有例如光學、光電子及電子元件等各種構件； 第10(a)圖示出一凹溝圖案設在一硬質且光滑的基板（ 母基板）上，例如矽片、石英、熔凝的二氧化矽、金屬、 片材，或玻璃板上； 第10(b)圖示出犧牲層的沈積，其最好係以一不均一的 10 薄膜塗層來形成； 第10(c)圖示出完成的犧牲層，並示出該凹溝圖案變成 封閉的微通道結構； 第10(d)圖示出一覆蓋材料的沈積，其可保護該犧牲層 及系統元件，以免遭受在釋離處理時底下之釋離層產生的 15 化學反應所影響； 第10(e)圖示出在該母基材上之通道結構的覆蓋層上來 製成習知的系統元件； 第10(f)圖示出使用旋塗法、CVD法、喷塗法、或任何 其它適當的技術，來沈積或塗設一聚合物（塑膠）膜； 2 0 第10(g)圖示出該系統包括該塑膠膜的釋離（分開），其 係將適當的化學或反應氣體供入經由該等微通道犧牲地溶 解該釋離層而來完成；Asano and Kinoshita have also studied a separation method to place TFTs on a plastic substrate. However, this method requires the use of glass as the mother substrate, and then the glass is etched (dissolved) to release it. Because it uses low temperature glass, this method is limited to the temperature range available for processing; and of course, these motherboards can no longer be used. Other separation technologies also include mechanical separation of the separation layer, as disclosed in the following prior patents: No. 5,811,348, 6,486,041, 6,214,701, 6,225,192, 6,159,824, 5,854,123 and other US patents, and DE 198 15 41 430 Al, DE 00993 029 A3, EP 0 797 258 and other patent cases. Release by peeling of a separation layer is disclosed in US Patent No. 6,372,608. Despite so many R & D achievements on separation layers, there is still a need for technologies that can easily make such systems and devices on non-general substrates. The present invention is specifically to respond to the above-mentioned needs for manufacturing high-performance systems on non-traditional substrates, and provides the following method: using a stabilized sacrificial layer in a build layer on a "parent" substrate The system is required to be released from the mother substrate and at the same time control any stress generated during the manufacturing / release process. The invention can be used for large-area, high-quality 8 200404340 发明, invention description system is made on a motherboard that can withstand high temperature, such as condensed silicon dioxide, quartz or silicon wafer, and then transferred to non-traditional , Can not even withstand high temperature on the substrate. The transferred system can also be encapsulated to improve robustness, mechanical stress resistance, and environmental stability. If the final positioning is on a flexible substrate, the system of the final structure can be placed on or near the neutral curved plane to minimize the mechanical stress caused by any deflection of the final structure. In the case of very large final substrates, all engraving problems can be overcome in a combined manner. In another variation of the present invention, the final substrate can also be set on the system before separation, thereby eliminating the previous step of transferring to the final substrate. Brief Description of the Drawings Figure 1 shows the deposition of a sacrificial layer on a hard substrate with a smooth surface by a suitable coating technique; Figure 2 shows the overlay of a cover layer on the sacrificial layer; 15 帛Fig. 3 shows a functional system made on the cover layer; Fig. 4 shows the grooves surrounding the functional system components carved into the first sacrificial layer, and using conventional techniques such as top surface removal To fill these trenches with a first sacrificial material; Figures 5a (section) and 5b (top view) show the overlay 20 of a polymer layer and the formation of through holes; Figure 6a (section) and 6b (top view) shows the first: sacrificial ㈣0 division; made on a polymer substrate, FIG. 7 shows that the sacrificial layer is lost; and the one-to-one system is shown in FIG. 8; 9 200404340 玖, Description of the invention Fig. 8a shows an example of a separation system according to the invention; Fig. 8b shows an actual separation system. In this example, the TFTs element has a flexible plastic final substrate; Figure 9 shows the application of the present invention to make a `` smart circuit board, '' 5 which contains, for example, optical, optoelectronic and electronic components Figure 10 (a) shows a groove pattern on a hard and smooth substrate (mother substrate), such as silicon wafer, quartz, fused silica, metal, sheet, or glass Figure 10 (b) illustrates the deposition of a sacrificial layer, which is preferably formed with a non-uniform 10 thin film coating; Figure 10 (c) illustrates the completed sacrificial layer, and shows the depression The trench pattern becomes a closed microchannel structure; Figure 10 (d) shows the deposition of a covering material that protects the sacrificial layer and system components from the 15 chemical reactions generated by the release layer under the release process. Impact; Figure 10 (e) shows a conventional system element made on the cover layer of the channel structure on the mother substrate; Figure 10 (f) shows the use of spin coating, CVD, spraying Or any other suitable technique to deposit or apply a polymer (plastic) film; 10 (g) illustrates that the system includes the release (separation) of the plastic film, which is accomplished by supplying an appropriate chemical or reactive gas to the sacrificial dissolution of the release layer via the microchannels;
第Ua圖為一種_被沈積的分離層材料之實例，其能符 合表-的所有要件，該層為一沈積的柱孔石夕材料。此H 10 200404340 玖、發明說明 會被用來作為製成第8b圖之分離系統的分離層； 第lib圖為一沈積分離層的實例，其係由共價結合於 基材的二氧化矽奈米微粒所形成； 第12圖示出本發明使用微粒來作為犧牲層的方法； 5 第13a與13b圖示出使用微粒來作為犧牲層的方法，其 中該母基材含有通道式貫孔以接近該犧牲層； 第14圖示出所沈積的柱狀孔隙網路矽； 第15圖為該薄膜在覆蓋及高溫處理後的狀況，示出該 薄膜仍保有其某些結構質地和多孔性。 10 【發明内容】 發明概要 本發明係有關在一母基材上製設一可移除系統的方法 。該方法係在一母基板上沈積一高表面體積比的犧牲層， 並藉a)除掉該犧牲層内和其上的揮發性化學物，及/或b)修 15 正該層的表面，而來穩定化該犧牲層，再以一覆蓋介質來 覆設於該犧牲層上，嗣於該覆蓋介質上製成一系統，及提 供貫孔來接近該犧牲層。較好是，該高表面材料係為一柱 狀孔隙膜，微球或奈米微粒。在製成該系統之後，本發明 的方法亦可敷設一頂層於該系統上來形成一包封系統。在 20 本發明之一方法中，該系統的曝露表面亦可被處理而來加 強一頂層對該系統表面的接合。本發明的方法亦包含由該 母基材除掉該犧牲層來釋開該系統的步驟。 在另一實施例中，本發明的方法亦包括，在該製造步 驟之時或者之後，但&敷設頂層之前，並在是供任何頂部 11 200404340 玖、發明說明 貫孔之前，進行以下各步驟··選擇性地除掉該系統和覆蓋 層的一部份來形成空隙區以圍限一島塊陣列，其係由元件 、結構、或系統與覆蓋層區塊等所組成，及以一犧牲材料 來選擇性地填滿該圍限島塊的空隙區域。在該等方法中， 5 該犧牲材料及高表面體積比的犧牲層皆會被除去，俾使該 系統此由母基材釋離。 本發明亦有關一種在母基材上製造一犧牲釋離層的方 法。在本方法中，一高表面體積比的犧牲層會被沈積在一 母基材上，且該犧牲層會被藉：勾除掉該犧牲層中或其上 10的揮發性化學物，及/或b)修正該層的表面，而來穩定化。 該方法亦包括以一覆蓋介質來覆蓋在該犧牲層上。 在另一實施例中，本發明的方法亦包括以下步驟：在 釋離的系統之該覆蓋材料側敷設一膜層來形成一種結構， 其中該系統係大致位於一撓曲應力減少的中立平面中。 15 本發明亦有關於由上述方法所製成的系統❶ C實施方式】 較佳實施例之詳細說明 本發明係有關高性能系統的製造，該等系統包括單一 裝置或7C件’或多數裝置或元件的組合，例如電晶體、二 生物元件、生化元件、流體Figure Ua is an example of a deposited layer material, which can meet all the requirements of the table, this layer is a deposited pillar hole stone material. This H 10 200404340, the invention description will be used as the separation layer of the separation system made in Figure 8b; Figure lib is an example of a deposited separation layer, which is composed of silicon dioxide covalently bonded to the substrate Figure 12 shows the method of using particles as a sacrificial layer of the present invention; Figure 5a and 13b show the method of using particles as a sacrificial layer, wherein the mother substrate contains channel-type through holes for accessing The sacrificial layer; FIG. 14 shows the deposited columnar pore network silicon; FIG. 15 shows the condition of the film after covering and high temperature treatment, showing that the film still retains some of its structural texture and porosity. [Summary of the Invention] Summary of the Invention The present invention relates to a method for making a removable system on a mother substrate. The method involves depositing a sacrificial layer with a high surface-to-volume ratio on a mother substrate, and by a) removing the volatile chemicals in and on the sacrificial layer, and / or b) correcting the surface of the layer, In order to stabilize the sacrificial layer, a sacrificial layer is overlaid on the sacrificial layer, a system is formed on the sacrificial medium, and a through hole is provided to approach the sacrificial layer. Preferably, the high surface material is a columnar porous film, microspheres or nano particles. After making the system, the method of the present invention can also be used to form a top layer on the system to form an encapsulation system. In one of the methods of the present invention, the exposed surface of the system may also be treated to enhance the bonding of a top layer to the surface of the system. The method of the present invention also includes the step of releasing the system by removing the sacrificial layer from the mother substrate. In another embodiment, the method of the present invention also includes, at or after the manufacturing step, but before & laying the top layer, and before any top 11 200404340 玖, invention description through hole, performing the following steps · Selectively remove a part of the system and the cover layer to form a void area to confine an array of island blocks, which is composed of components, structures, or systems and cover layer blocks, etc., with a sacrifice Material to selectively fill the void area of the containment island block. In these methods, both the sacrificial material and the sacrificial layer with a high surface-to-volume ratio are removed, causing the system to be released from the mother substrate. The invention also relates to a method for making a sacrificial release layer on a mother substrate. In this method, a sacrificial layer with a high surface-to-volume ratio is deposited on a mother substrate, and the sacrificial layer is borrowed: removing volatile chemicals in or on the sacrificial layer, and / Or b) modify the surface of the layer to stabilize it. The method also includes covering the sacrificial layer with a covering medium. In another embodiment, the method of the present invention also includes the steps of: laying a film on the cover material side of the released system to form a structure, wherein the system is located approximately in a neutral plane with reduced flexural stress . 15 The present invention also relates to a system made by the method described above. C Embodiment] Detailed description of the preferred embodiment The present invention relates to the manufacture of high-performance systems, which include a single device or 7C pieces' or a majority of devices or Combination of elements, such as transistors, two biological elements, biochemical elements, fluids
不限於電抗器。使用本發明的方法， 該等系統亦可被製設 20極體、電子元件、化學元件、 12 200404340 玖、發明說明 於非習用基材上例如撓性的，非平面的，或非常大面積的 基材等^本發明的方法主要是在一母基材上製造或構建該 系統，然後釋開含有該所要系統的料層。該系統係可在釋 離之後被移轉至最終基材，或者該最終基材亦可在該系統 5釋離之前被以某種方法例如黏接、沈積或旋塗等來附設在 該系統上。本發明的方法亦可被用來製造一單系統或多系 統。本發明係利用犧牲膜來由一硬質的“母，，基材上分離該 系統，該母基材最好可以再使用。分離層的使用及製造元 件和系統等之技術，曾被揭於已公開的美國專利申請案 10 20〇2/0020053 A1中，該案内容併此附送。本發明係使用 一高表面體積比的犧牲層，並藉穩定化及/或蔽護該犧牲 層而來改良目前既知的方法。本發明亦揭露一種手段可藉 後續的包封而來進一步加強系統的機械及環境耐用性。 本發明的方法具有以下優點：（1)使該最終基材能完全 15 隔絕於該系統製程中的熱處理，及幾乎所有的處理歷程， (2)能夠使用任何的最終基材，包括塑膠、金屬及玻璃薄片 等’〔3)能藉著形成包圍系統構件的應力消釋區域，並同時 或順序地由該母基板釋離該系統，而來減少機械應力問題 ，（4)若需要較大的最終基材，則可拼鋪組合，（5)容許該 20 系統在分離之後移轉至一最終基材，或容許該最終基材在 該系統分離之前先被附設，（6)能夠在移轉時或之後來進一 步包封以加強機械及環境耐用性，（7)容許吸熱器或作動流 散熱器被内建在該系統/最終基材中，及（8)容許該t統被 設在t近最終基材的應力中平面處，以減少任何基材撓 200404340 玖、發明說明 曲的作用。 本發明係有關在一母基材上來製成可移除系統的方法 一 。概括而言，本發明的方法包含以下步驟： 在一母基材上沈積一高表面體積比的犧牲層； 5 藉U除掉在該犧牲層中及其上的揮發性化學物，及/或 2)修正該層的表面，而來穩定化該犧牲層； 以一覆蓋介質來覆蓋該犧牲層的表面； 在該覆蓋介質上來製成一系統；及 製成貫孔來接近該犧牲層。 10 本發明的方法亦包括除掉該犧牲層而由母基材釋開該 系統的步驟。本發明之方法的其它態樣將說明如下。亦如 * 後所述，該系統嗣可被附設於任何種類的基材。 — 本發明的另一實施例係有關在一母基板上製設一犧牲 釋離層的方法。該方法係在一母基材上沈積一高表面體積 15比的犧牲層，並藉4除掉在該犧牲層中及其上的揮發性化 學物，及/或b)修正該層表面，而來穩定化該犧牲層。至於 其它實施例的方法，亦得以一覆蓋介質來覆設在該犧牲層 上。 該“母”基材能在製造過程中對該等元件提供機械及溫 2〇 度穩疋性。此基材應具有機械穩定性以供執持移送，及在 兩溫下的溫度穩定性，和匹配該等元件所用材料的膨脹係 數。任何習知的硬質光滑基材皆可被選擇作為母基材，只 要具有光滑表面及微電子製程的適配性。該母基材的材料 選擇包括但不限於半導體（如矽晶圓或薄片），玻璃包括特 14 200404340 玫、發明說明 製玻璃（如Corning 1737等），溶凝的二氧化石夕，石英，陶 究（如氣化鋁），及金屬（如鋼）等。此母基材係最好能供再 使用’且在其表面上可設有或不設置一覆蓋層。該母基材 亦可在每次使用時再重新覆層。 5 本發明的方法係使用穩定化的高表面體積比的犧牲層 ’其可容許高溫處理一若需要該等處理時—以供製成所述 的系統。一系統或在一系統内之特定元件的製造，係可使 用該領域中的習知技術來完成。該犧牲層係存在於母基材 與該系統之間。構建在母基材上的結構會罩覆該功能系統 1〇 。該等功能系統係由所須之構成各系統、元件、裝置和互 接物的材料組合而來製成（例如沈積及餘刻）。當需要該系 統製造之南溫處理的完整調適性時，該犧牲層應具有以下 表一所列之一或多種特性： <表一：犧牲層要件> 15 △能承受高處理溫度（T< 1200。〇。 △當高溫處理時不會擴散至一太大程度。 △當高溫處理時不會負面地化學反應至任何可觀程度。 △能承受處理的化學物或能與處理化學物相容而被保護。 △在去除時不會產生太多的氣體生成物。 20 △在處理時不會造成太大的應力問題。 △能被不會影響該系統結構的化學/物理攻擊來除去。 此亦可藉選擇化學攻擊的接近路徑之位置，或阻隔層的設 計，’或其某些組合为來達成。 △能容許攻擊化:，物之橫向傳輸來形成_整的分離。 15 200404340 玖、發明說明 △ /、有向表面體積比的結構俾加強傳輸及去除能力。 △若具有高表面體積比之結構，此特徵必須在處理進行 中能夠維持。 △能夠被沈積而使母基板可輕易再使用。 5 該犧牲層係使用一高表面積對體積比的材料來製成。 在一實施例中，該犧牲層係為一柱狀孔隙膜。一般該柱狀 孔隙膜係為一半導體材料。較好是，該柱狀孔隙膜係為由 石夕、二氧化矽、鍺、氧化鍺、矽合金如SiGe、SiGeC等所 製成的薄膜。該薄膜亦可包含氫、氣、或氟。美國專利 10 No· 6,399，177 B1乙案中有揭露該等薄膜的沈積技術，併 此附送提供參考。一柱狀孔隙矽膜並不像一般習用的多孔 矽，在沈積時並不用電化學蝕刻，其具有規則一致且可控 制的柱狀孔隙結構，而矽會滲入該等孔隙中。柱狀孔隙網 路矽犧牲層曾被揭於已公開的美國專利申請案No. 2002/ 15 0020053 A1中。使用低溫的電漿沈積製法可使材料被製設 在各種的基材上。由於犧牲層柱狀孔隙網路矽會具有較快 的蝕刻速率，即使蝕刻係經由較小尺寸的濕蝕刻劑通孔來 進行時。該柱狀孔隙網路矽膜的開孔區域可在去除該犧牲 層時，容許蝕刻劑和反應生成物的快速流通，且該快速的 2〇 犧牲層蝕刻會提升整體製程的可靠性。此外，其較快的蝕 刻速率能在薄覆蓋層内造成細微結構。其它有關使用具有 柱狀孔隙矽網路的犧牲層之例子，曾被揭於·· “A novel fabrication technology for Si 丁FTs on flexible substrates”， Y. Lee, S. Bae and S. Fonash, ECS Extended Abstracts, 16 200404340 玖、發明說明Not limited to reactors. Using the method of the present invention, these systems can also be fabricated with 20 poles, electronic components, chemical components, 12 200404340, and the invention is described on non-conventional substrates such as flexible, non-planar, or very large areas. Substrate etc. The method of the present invention is mainly to manufacture or construct the system on a mother substrate, and then release the layer containing the desired system. The system can be transferred to the final substrate after release, or the final substrate can be attached to the system by some method such as adhesion, deposition or spin coating before the system 5 is released. . The method of the present invention can also be used to make a single system or multiple systems. The present invention uses a sacrificial film to separate the system from a hard "mother," and the substrate is preferably reusable. The use of separation layers and the technology of manufacturing components and systems have been disclosed. The content of the published U.S. patent application 10 2000/0020053 A1 is hereby attached. The present invention uses a sacrificial layer with a high surface-to-volume ratio and is improved by stabilizing and / or shielding the sacrificial layer Currently known methods. The present invention also discloses a method that can further strengthen the mechanical and environmental durability of the system by subsequent encapsulation. The method of the present invention has the following advantages: (1) the final substrate can be completely isolated from 15 The heat treatment in the process of the system, and almost all the processing history, (2) can use any final substrate, including plastic, metal and glass flakes, etc. (3) can form a stress relief area surrounding the system components, and Simultaneously or sequentially release the system from the mother substrate to reduce the problem of mechanical stress. (4) If a larger final substrate is required, it can be tiled and combined. (5) The 20 system is allowed to separate Transfer to a final substrate, or allow the final substrate to be attached before the system is separated, (6) can be further encapsulated during or after transfer to enhance mechanical and environmental durability, and (7) allow heat absorption Or the radiator of the active fluid is built into the system / final substrate, and (8) allows the system to be located near the stress mid-plane of the final substrate to reduce any substrate flexure. The effect of the song is described. The present invention relates to a method 1 for making a removable system on a mother substrate. In summary, the method of the present invention includes the following steps: Depositing a high surface volume ratio on a mother substrate Sacrificial layer; 5 by removing volatile chemicals in and on the sacrificial layer, and / or 2) modifying the surface of the layer to stabilize the sacrificial layer; covering the sacrificial layer with a covering medium Forming a system on the covering medium; and making through holes to access the sacrificial layer. 10 The method of the present invention also includes the step of removing the sacrificial layer and releasing the system from the mother substrate. The present invention Other aspects of the method will be explained as follows Also as described later *, the system can be attached to any kind of substrate. — Another embodiment of the present invention relates to a method for forming a sacrificial release layer on a mother substrate. The method is a mother substrate A sacrificial layer with a high surface volume ratio of 15 is deposited on the substrate, and the volatile chemicals in and on the sacrificial layer are removed by 4 and / or b) the surface of the layer is modified to stabilize the sacrificial layer. As for the methods of the other embodiments, a covering medium can be used to cover the sacrificial layer. The "mother" substrate can provide mechanical and temperature stability of 20 degrees to these components during the manufacturing process. The material should have mechanical stability for holding transfer, and temperature stability at two temperatures, and the expansion coefficient of the material used to match these components. Any conventional hard and smooth substrate can be selected as the mother substrate, As long as it has a smooth surface and the adaptability of the microelectronics process. The material selection of the mother substrate includes, but is not limited to, semiconductors (such as silicon wafers or wafers), glass includes tex 14 200404340, glass made of invention (such as Corning 1737, etc.), fused silica, quartz, ceramics Research (such as gasified aluminum), and metals (such as steel). This base material is preferably recyclable 'and may or may not be provided with a cover layer on its surface. The mother substrate can also be recoated every time it is used. 5 The method of the present invention uses a sacrificial layer with a stabilized high surface-to-volume ratio, which allows high-temperature processing if such processing is needed-for making the system described. The manufacture of a system or specific components within a system can be accomplished using techniques known in the art. The sacrificial layer is present between the mother substrate and the system. The structure built on the mother substrate covers the functional system 10. These functional systems are made of the required combination of materials that make up each system, component, device, and interconnector (such as deposition and afterglow). When the full adaptability of the south temperature treatment manufactured by the system is required, the sacrificial layer should have one or more of the characteristics listed in Table I: < Table 1: Elements of the sacrificial layer > 15 △ Can withstand high processing temperature (T & lt 1200. △ △ will not diffuse to a large extent when treated at high temperature. △ will not negatively react to any appreciable degree when treated at high temperature. △ can withstand or be compatible with treatment chemicals It is protected. △ Does not generate too many gaseous products during removal. 20 △ Does not cause too much stress during processing. △ Can be removed by chemical / physical attacks that will not affect the structure of the system. It can also be achieved by choosing the position of the approach path of the chemical attack, or the design of the barrier layer, or some combination thereof. △ Allowable attack: the horizontal transmission of objects to form a complete separation. 15 200404340 玖, Description of the invention △ /, Structure with directed surface volume ratio 俾 Strengthen transmission and removal capabilities. △ If it has a structure with high surface volume ratio, this feature must be maintained during processing. △ Can be sunk The mother substrate can be reused easily. 5 The sacrificial layer is made of a material with a high surface area to volume ratio. In one embodiment, the sacrificial layer is a columnar porous film. Generally, the columnar porous film Is a semiconductor material. Preferably, the columnar pore film is a thin film made of Shi Xi, silicon dioxide, germanium, germanium oxide, silicon alloy such as SiGe, SiGeC, etc. The thin film may also include hydrogen Gas, or fluorine. In US Patent No. 6,399,177 B1 B, the deposition technology of these films is disclosed and attached for reference. A columnar porous silicon film is not like the commonly used porous silicon. It does not use electrochemical etching, it has a regular and controllable columnar pore structure, and silicon will penetrate into these pores. The columnar pore network silicon sacrificial layer has been disclosed in published US patent application No. 2002 / 15 0020053 A1. The use of low-temperature plasma deposition allows the material to be fabricated on a variety of substrates. Due to the sacrificial layer of the columnar pore network, silicon will have a faster etching rate, even if the etching system is through a smaller size. Wet etchant pass The hole area of the columnar pore network silicon film can allow the rapid flow of etchant and reaction products when the sacrificial layer is removed, and the rapid etch of the 20 sacrificial layer will improve the overall process. Reliability. In addition, its fast etch rate can cause fine structures in thin overlays. Other examples of using sacrificial layers with columnar pore silicon networks have been revealed ... "A novel fabrication technology for Si Ding FTs on flexible substrates ", Y. Lee, S. Bae and S. Fonash, ECS Extended Abstracts, 16 200404340 玖, Description of Invention
Electrochemical Society meeting, Oct.? 2000, pg 791; “Flexible display enabling technology’’，S. Wagner, S. Fon sh，T. Jackson and J. Sturm, Cockpit Display; VIII: Displays for Defense Applications, Proc. SPIE VoL 4362, 5 p226-244, Sep.，2001; “Enabling technologies for plastic display’’，J. Sturm， H. Gleskova, T. Jackson, S. Fonash, and S. Wagner, Cockpit Displays IX: Displays for Defense Applications, Proc. SPIE Vol· 4712, p222-236, August，2002;及 10 “Transfer approach toward fabricating poly-Si TFTs on plastic substrates” H. Li，Y· Lee and S. Fonash，ECS Extended Abstracts, Electrochemical Society meeting，Oct.， 2002, pg 647; 等各文獻中，該等資料亦併此附送。 15 第11a圖示出一分離層材料的特定實例，其能符合表 一的所有要件。該層係為一沈積的柱狀孔隙矽材料。如所 示，其具有較大的表面積/兑，而伸展的孔隙區域將可加 強側向的傳輸及快速的化學反應。第1 lb圖示出另一例的 高表面體積比之犧牲層。在此例中係使用奈米顆粒（如Si或 20 Si02微球），其亦可滿足表一的要件，且功能如同犧牲層 ，而被概略地示出。該等微球或奈米顆粒必須接近相同的 尺寸，以防止覆蓋層變形。或者，不同尺寸的微球亦可被 用於同一犧牲層來造成一更f紮的膜層，或較不粗、41的表 面。該等可能被使用的奈米球體、微粒、或分子係可由許 200404340 玖、發明說明 多材料來形成，包括二氧化石夕微粒、石夕微粒、半導體微粒 、絕緣體微粒、聚合物微粒、自行組合的分子或任何其它 球形、多邊形或不規則形狀的奈米或微尺寸的結構。當被 製成於-單層或疊層結構時，該等材料應具有一高表面對 5體積比。該等微粒、母基板或兩者亦可被以不同的表面化 學處理或連結基來官能化，而使該等微粒可藉共價“、靜 電吸力、氫鍵連接、Wander Walls(凡得瓦）作用力、分子 識別性（如維生素·抗生素作用）等來連結及/或圖案化於該 表面上。 10 為在本發明的方法中，特別是在以高溫來製造系統或 疋件時，能使用一高表面對體積比的犧牲層，故該犧牲層 須被穩定化。具有高表面自由能之高表面積的微尺寸及奈 米結構的薄膜，將會使其表面原子在薄膜的塊體熔點以下 之溫度即變成活動易遷移的。此將會導致該薄膜在低溫， 15通^指製造溫度以下，即會由於燒結而密實化。此密實化 在當以化學攻擊來除掉該薄膜時將會是不利的。且，許多 沈積膜具有各類物質，其會在高溫時由該薄膜逸出，例如 在石夕中的氫。為穩定化該犧牲層而使氣體、液體或固體等 不會在元件處理時逸出，故該等物質必須在覆蓋該犧牲層 20之前來被除去，以防止例如污染或起泡等不良作用。故， 本發明之一重要概念係，要在沈積該覆蓋層之前，或之中 ，或者之後，來穩定化該犧牲層。 ”亥犧牲層亦可藉其表面的化學處理而來穩定化，例如 在氣體環境中，或在酸液或鹼液中來氧化或氮化。該表面 18 200404340 玖、發明說明 亦可於一退火步驟或退火及化學反應的組合步驟中來被穩 定化。為除掉高溫處理時可能會由該犧牲層釋出的雜質， 亦可進行一化學處理來反應及/或除掉表面雜質，或來將 匕們由該材料中濾除。一退火步驟亦可被執行來除掉該等 5 雜質，且同樣地其亦可搭配一化學處理來進行。 穩定化該犧牲層之一具體實施例，係對一可承受高溫 處理之作為犧牲層的柱孔網路沈積梦進行熱處理。若沒有 穩定化步驟，該薄膜會在後續的處理中可觀地密質化，而 會消除該等在化學攻擊時可供有效除去該薄膜的連續孔隙 10網路。該薄膜亦會在600°C以上的溫度時大量地釋出氩， 而造成覆蓋層及系統或元件等之起泡或破裂。一種穩定化 該犧牲層的方法係在一氮環境中來進行退火。於該母基材 上沈積該柱孔網路石夕犧牲層之後，會在一以氮淨化的爐中 以550°C來退火6小時。在該爐中殘留的氧及該薄膜表面上 15的水，會將其輕微地氧化而使該表面穩定化。退火的時間 和溫度係可依該爐及薄膜的條件而改變。以此方式的退火 亦能由該犧牲層中釋出其在沈積時所含入之表面及内部的 氫。在被以此方法來穩定化之後，該犧牲層的結構仍接近 相同於原來沈積膜，但已被修正而使其在高溫的變化能減 20 至最小，而仍保有足供有效分離所需的結構和成分。第14 圖示出被沈積的柱孔網路矽。在經退火穩定化步驟之後其 結構幾乎不變。第15圖示出該薄膜經覆蓋及高溫處理後的 狀態，其大致仍保侍原有的結構和多孔性。假使該薄膜未 被穩定化，則其將會顯得十分密實而僅含常較少的細孔。 19 200404340 5 玖、發明說明 另一種穩定化該柱孔網路矽犧牲層的方法係為過氧化 氫處理。當在過氧化氫液尹處理時，其表面處及接近該表 面的氫將會反應而形成水，且該表面會被輕微地氧化。此 將會造成與退火處理類似的穩定特性。其處理時間和溫度 亦視該柱孔網路材料的性質而定。由該高表面體積比的犧 牲層來除掉揮發物亦可在減壓或真空中來完成。 10 本發明的方法亦包含以-覆蓋介質來覆蓋該犧牲層。 該覆蓋介質會形成該系統或其内的元件被構建的表面，並 可用來穩定化該犧牲層。該覆蓋介質亦可提供該犧牲層的 附加保護’蔽護其免受後續該系統之製造所用的化學物等 之影響》&，該覆蓋介質不能在後續的處理時，特別是在 該系統的製造時，過分地劣化。該覆蓋介質會以最小的孔 隙填補率來遍佈於犧牲層上，而造成機械耐用性和官能性 15 的化學阻隔層。該覆蓋層材料可包括陶究、金屬、氧化物 、氮化物、半導體、絕緣體、及其組合物等。較佳的覆蓋 介質為Si02&Si3N4，其亦可於疊膜結構中—起被使用。 20 在撓性基材上來製造薄膜系統或元件時，應力問題係 非常普遍’而會在“雜之後造成“捲曲”。本發明的方 法亦為解決該問題。應力釋放係可在_變化製法中來達成 ’其係使用-第二犧牲材料來提供通達該犧牲層(其可為 相同或不同之材料）的路徑，並形成該等系統構件的應力 釋放區。在此實施例中’本發明的方法乃包括在製造步驟 之時或者之後但在覆設頂層之前及釋分之前，進行以下 的步驟.選擇性地除去該系統及覆蓋層的—部份，來形成 20 200404340 玖、發明說明 界限島塊陣列的空隙區，該等島塊係由裝置、元件、結構 咖及覆蓋層的區塊等所組成；並以—犧牲材料來選擇 性地填滿該界限島塊的空障區。該犧牲材料係可為任何犧 牲材料’而不-定要相同於該犧牲層，雖然其最好亦為一 5如前所述之高表面對體積比的材料。在本發明的方法中， 被製成的系統係藉除去該犧牲材料及該犧牲層而來由該母 基材釋離。此係可在-同時除掉該犧牲材料和犧牲層兩者 之單一步驟中，或以各別去除的分開步驟來完成。最好是 ，該犧牲材料可被除掉來形成接近該犧牲層的途徑。在除 10去之後，覆蓋材料會保留島狀結構。該等空隙區將可對最 終的系統提供應力釋放效果，並亦能作為操作時的散熱區。 本發明的方法可供進行高溫處理，因此在釋離及製成 最終基材之前，乃可進行高品質的系統構件製造或連接。 高品質的構件可被連接於該系統中；或其在該系統内的製 15造，係可利用本發明來完&，因為不會有*何固存的處理 溫度限制和應力問題。使用於如下所述之製程中的第一犧 牲材料，係可為任何能夠承受高溫，而與該製程化學性相 容的材料。其材料之例係為Si&Si〇2。若使用時如在第 1〜8圖之例中，該第二犧牲材料乃可為任何容易除去的材 2〇料，例如Si或其它的半導體、陶瓷、金屬、有機物、聚合 物或其組合物等。除掉該等犧牲材料的手段，則可為化學 、物理的方法，或其某些組合方式。 ^該系統製成之後，本發明的方法亦包括在該系統上 覆設-聚合物、玻璃、金屬、陶瓷、氧化物、氮化物、絕 a h 200404340 玖、發明說明 絕體、導電體、半導體、有機物、塑膠、或其組合的頂層 ’而來形成一包封系統的步驟。此頂層亦可為該系統的永 久頂層，或亦可被用來將該系統黏接於另一基材上。 為能在釋離之前有效地將一頂層黏接於所製成的系統 5 ’在該領域中習知的表面化學處理及黏接技術乃可被使用 。此係可在該系統本身的曝露表面上，或在一罩蓋該系統 的頂層上來進行。該處理與黏接技術可包括使用表面化學 性修正劑例如會與有機連結基來反應的石夕烧，來共價地化 學鍵結連接。黏劑亦可被使用，例如環氧基物或樹脂，或 10不完全固化地旋塗之介電質、玻璃或聚合物等。本發明之 一特定實施例係使用一種旋塗的介電質，例如苯環丁烷 (BCB)，其在被塗覆於塑膠之前不會完全固化。該未固化 的BCB具有溶劑及活性的有機物基，而有助於黏附一塑膠 膜以BCB來結合一沈積的塑膠膜例如paraiyne的系統會 15有許夕引人的特性，因為該BCB具有透光及介電性質，而 該paralyne具有透光及機械和化學阻抗性質。因此，在一 較佳實施例中，一聚合物層會被佈設在該系統上來形成一 包封系統，並調整該聚合物頂層的曝露表面來加強連結。 又一層聚合物、玻璃、金屬或陶瓷嗣可被敷設於該調整的 20聚口物表面上，或於另—基材±，此係可在該系統由母基 材釋離之前或者之後來進行。 本發明之技術的另一特點係其在釋離程序的可調變性 具β之，其可容該等犧牲層的去除利用垂直的或水平的 或者兩種兼具的微尺寸或奈米通道網路來輸送犧牲層的去 22 200404340 玖、發明說明 除劑。本發明的方法乃設有貫孔等來供接近及除掉該犧牲 層或犧牲材料。因此，該方法亦包括造成貫孔等深達該犧 牲層，或至少達到該犧牲材料。該等貫孔的位置、尺寸及 數目乃可使用微影技術來界定，並以反應離子蝕刻劑或在 5該領域中習知的其它手段來造成貫孔。該等貫孔係可設在 母基材中，而在該母基材平面中形成某種網路的組合，或 穿過該母基材的厚度來達到犧牲層。該等貫孔會被設成貫 穿該頂層，系統或系統區，覆蓋層及母基材等。 第1〜8圖 係示出去除劑經由一垂向通道來達到犧牲層的狀況，而第 10 10圖示出一流程之例，其中去除劑係經由一水平通道系統 來接近該犧牲層。第13b圖則示出去除劑通過母基材及一 水平佈設的通道網路來進入。 該等貫孔會形如用來除去該犧牲層之化學劑（如酸、 驗或有機溶劑）的管道。該化學劑會流經此等管道且向下 15滲透至犧牲層頂部，並濕化該犧牲層，而化學性地攻擊該 犧牲層材料。在一驗證該等貫孔管道的實驗中，一金屬犧 牲層會被蒸錢，且一 1〇〜5 μιη的聚合物層會被旋塗在 Coming 1737的玻璃上。在該等貫孔被以微影術來界定， 且各孔被以反應離子蝕刻來製成之後，該樣品會被浸入一 20酸液中。該酸液會經由該等貫孔管道進入至犧牲層的頂面 ’而來姓刻該犧牲層，並側向地擴展。當該酸液側向移動 並I虫刻該犧牲層時，該聚合物覆層會被分開。隨著此分開 程序的進一步發展，其分開的面積逐漸增大。如第5、12 、13圖所示，供化學劑接近該犧牲層的貫孔等可被設在母 23 200404340 坎、發明說明 基材中，如前所述該母基材係可再使用的。藉著去除該犧 牲層，則在該疊膜上的元件結構和電路等，將可由該母基 材釋離。 如前所述，依據本發明之方法所製成的系統，在由該 5 母基材釋離之後，乃可被佈設於另一基材上。本發明的方 法將特別適用於製造供佈設於撓性或非平面基材上的系統 。該等基材乃可為暫時性基材或亦可為永久性基材。 當一系統被釋離並移轉至最終基材，或該系統被覆設 最終基材且與母基材分開之後，則可進行另外的包封步驟 1〇 。例如，若該系統的構件被中夾於該最終基材與另一適當 選擇的材料之間，並位於或接近於彎曲的中立平面處時， 則作用在該等系統構件上的應力將會減少。本發明的技術 乃獨特地容許高品質且應力消減的系統構件以此方式來被 中夾，而更為增強它們的調適性和耐用性。因此，本發明 15的方法亦可包括在該系統的覆蓋材料側敷設一料層的步驟 ，而來形成使該系統大致位在一彎曲應力減少之中立平面 内的結構。 如上所述，於此所揭之本發明乃包含一種概念和製造 技術，其可應用於製造各種系統及各種系統的元件，包括 20但不限於電晶體、二極體、電子元件、化學元件、生物元 件生化元件、μ體元件、微機電元件、感測器、燃料電 池、光電子元件、光生伏打電池、光學結構物、微電子元 件；顯示器'或電路板系統等等。該等化學元件、生物元 件、生化元件包括但不限於電抗器。該等系統亦可被製設 24 200404340 玖、發明說明 在小面積或大面積的基材上，及甚至在撓性基材上。該等 系統亦可被併排“組合”製設在大面積基材上，來造成一單 系统或多系統。且，本發明亦可用來製造多層的二維結構 。這些亦可包括基板上的微燃料電池，光生伏打電池，或 5化學電抗器元件。第9圖示出本發明之一概念性用途，即 用來製成一“智慧電路板”，其包含有各種構件例如光學、 光電子、及電子元件等。某些該等元件可被直接製設，而 有些則可在該系統被設在母基材上後才來連接。該系統乃 可在釋離之後被移轉至最終基材（即本例的“基板”），或該“ 10基板”層亦可在該系統釋離之前被附設於該系統上。 (流程範例） (1)主要使用垂向之去除劑通路的製程範例 第1〜8圖示出使用垂向通路來進行去除處理的流程範 例。第1圖示出一犧牲（第一釋離）層沈積在一光滑的“母，，基 15材上，例如玻璃、石英、熔凝的二氧化矽、金屬片、矽、 或任何其它平坦表面的材料等。被沈積在該母基材之後， 該犧牲層會被以一種前述的製程例如退火來穩定化。若有 需要，則一或多數的中間層亦可被設在此犧牲層底下。第 2圖示出一覆蓋層的沈積。該覆蓋層上會被製設該等系統 20 70件（見第3圖）。其即為第一層“構建層，，。所有的沈積步驟 乃可藉各種手段來完成，包括旋塗法，物理沈積，化學沈 積，及化學反應等。此覆蓋層亦會保護該犧牲層，假使該 高表面體積比的材料係如第丨丨圖所示者。舉例而言，當高 多孔性的柱孔矽（見第1 1圖）被用作為該犧牲層時，則一二 200404340 玖、發明說明 /氧切相及純微氧化，或僅料柱切的稍 微氧化，將會保存該高表面體積比之犧牲材料的結構。此 種薄膜的進-步穩定化乃可包括經由一退火或化學程序來 除掉表面及塊體内的氫。 第3圖示出在製造時該系統的元件結構。第斗圖示出一 可擇步驟：造成包圍該等元件結構的凹槽區域(例如以乾 ㈣、濕姓刻、或雷射熔削等)，及沈積-如圖所示之犧 牲材料（第二釋離層）來填滿該等凹槽。此材料可盘第一犧 牲層的物質相同或者不同，且其可以替代（如第4圖所示）一 部份的第一犧牲層，或亦可未予取代（未示出）。包含第4圖 所示的步驟’乃可在構建時對該等系統元件提供完全的， 或至少部份的機械、熱、及電之隔離能力，如由第6b圖可 推知者。 15 20 不管是否含括第4圖所示的步驟，更多的構建層亦可 被設如第5圖所示，例如，在第5圖中，乃示出-聚合物層 沈積或黏接在該等系統元件結構上。該各層亦可在數個製 層步驟中來形成’且該系統的電互接物或其它結構物亦可 被設在該等構建層中’並可經由通孔（未示出）來連接於其 它的系統元件。-或全部的該等構建層將會形成最終基材 或先成承載層而可容該系統定位在其最終基材上。惟 在^何If况下此承載或最終層皆可為膜或塑膠且為 可撓的。垂向貫孔等可藉某些製程步驟例如餘刻或炼削來 製設在該等構建層中，如請所示。於第％圖中可見， 及等貝孔可供輯至該第_及第二犧牲層—當設有該層時。 26 200404340 玖、發明說明 使用該等垂向貫孔，該第二犧牲材料當有存在時，亦 可藉氣化（由貫孔以氣體逸出）、溶解（溶劑由貫孔進入）、 或蝕刻（蝕刻劑由貫孔進入）等來被除去。此第二犧牲層的 去除係可被首先完成（如第6a及6b圖所示），然後再除去第 5 犧牲層（以相同或其它手段）；或者它們亦可在同一步驟 來被除去（未示出）。惟在上述兩種狀況中，該第一犧牲層 皆為由母基材分離的關鍵，且其必須被以氣化、溶解、或 蝕刻來除去。此係設在第7圖的底部。第8圖則示出第7圖 的處理之後的最終結果。該等覆蓋層島塊係可以（如所示） 10或亦可不被保留（未示出）。在此時，第8圖的結構乃可如前 所述被黏接於其它基材上；或亦可進一步處理而以更多材 料來包覆底部，以增進機械強度及/或環境耐用性；或者 兩者皆被進行；且其亦可至少以該等構建層的頂部作為最 終基材而來使用。假使有更多材料沈積或黏接於底部，則 15可將該等系統元件置設在或靠近最後製成結構的中立平面 上。 此流程之顯而易知的變化亦可被使用，包括那些穿過 母基材（未示出）來接近該犧牲層（或該等犧牲層，假使第4 圖的隔離方式被使用時）的垂向通孔等。請注意第朴圖的 20系統是使用具有第4圖之步驟的流程所製成者。以此方式 所製成的電晶體會在撓性基材上顯現絕佳的性能。 (2)主要使用水平之去除劑通路的製程範例 一主要呈水座排列佈局的微尺寸或奈米通道網路亦可 被使用於本發明的方法中。使用微尺寸之奈米通道來供傳 27 200404340 玖、發明說明 可減少去除犧牲層（如蝕Electrochemical Society meeting, Oct.? 2000, pg 791; "Flexible display enabling technology", S. Wagner, S. Fon sh, T. Jackson and J. Sturm, Cockpit Display; VIII: Displays for Defense Applications, Proc. SPIE VoL 4362, 5 p226-244, Sep., 2001; "Enabling technologies for plastic display", J. Sturm, H. Gleskova, T. Jackson, S. Fonash, and S. Wagner, Cockpit Displays IX: Displays for Defense Applications, Proc. SPIE Vol · 4712, p222-236, August, 2002; and 10 “Transfer approach toward fabricating poly-Si TFTs on plastic substrates” H. Li, Y · Lee and S. Fonash, ECS Extended Abstracts, Electrochemical Society meeting, Oct., 2002, pg 647; and other documents, this information is also attached. 15 Figure 11a shows a specific example of a separation layer material that meets all the requirements of Table 1. This layer is a deposited columnar porous silicon material. As shown, it has a large surface area / permeability, while extended pore areas will enhance lateral transport and fast chemical reactions. Figure 1 lb shows another example of a sacrificial layer with a high surface-to-volume ratio. In this example, nano particles (such as Si or 20 Si02 microspheres) are used, which can also meet the requirements of Table 1, and function as a sacrificial layer, but are shown schematically. The microspheres or nano particles must be close to the same size to prevent deformation of the cover. Alternatively, microspheres of different sizes can be used on the same sacrificial layer to create a more thin film layer, or a less coarse, 41 surface. These nanospheres, particles, or molecular systems that may be used can be formed by Xu 200404340, a multi-material description, including stone dioxide particles, stone evening particles, semiconductor particles, insulator particles, polymer particles, self-assembly Or any other spherical, polygonal, or irregularly shaped nano- or micro-sized structure. When made in a single-layer or laminated structure, these materials should have a high surface-to-volume ratio. The particles, mother substrate, or both can also be functionalized with different surface chemical treatments or linking groups, so that the particles can be covalently ", electrostatic attraction, hydrogen bonding, Wander Walls The surface is connected and / or patterned on the surface by the action force, molecular recognizability (such as the action of vitamins and antibiotics), etc. 10 It can be used in the method of the present invention, especially when manufacturing a system or a component at high temperature A sacrificial layer with a high surface-to-volume ratio, so the sacrificial layer must be stabilized. A micro-sized and nano-structured film with high surface free energy and high surface area will make its surface atoms below the bulk melting point of the film The temperature will become mobile and easy to migrate. This will cause the film to be at a low temperature, which means that the film will be densified due to sintering when the temperature is below 15 °. It is disadvantageous. Also, many deposited films have various kinds of substances, which will escape from the film at high temperature, such as hydrogen in stone evening. In order to stabilize the sacrificial layer, gas, liquid or solid will not be present. yuan It escapes during processing, so these substances must be removed before covering the sacrificial layer 20 to prevent adverse effects such as pollution or blistering. Therefore, an important concept of the present invention is that before the covering layer is deposited, Either, or later, the sacrificial layer is stabilized. "The sacrificial layer can also be stabilized by chemical treatment of its surface, such as in a gaseous environment, or in an acid or alkali solution to oxidize or nitride. . The surface 18 200404340 发明, description of the invention can also be stabilized in an annealing step or a combination of annealing and chemical reactions. In order to remove impurities that may be released from the sacrificial layer during high-temperature processing, a chemical treatment may also be performed to react and / or remove surface impurities, or to filter the knives from the material. An annealing step can also be performed to remove the 5 impurities, and it can also be performed with a chemical treatment. One embodiment for stabilizing the sacrificial layer is a heat treatment of a pillar hole network deposition dream that can withstand high temperature processing as a sacrificial layer. Without the stabilizing step, the film would be considerably denser in subsequent processing, which would eliminate the continuous network of pores 10 that could be used to effectively remove the film during chemical attack. The film also releases a large amount of argon at a temperature above 600 ° C, which causes blistering or cracking of the cover layer and the system or component. One method of stabilizing the sacrificial layer is annealing in a nitrogen environment. After the pillar hole network stone sacrifice layer is deposited on the mother substrate, it is annealed at 550 ° C for 6 hours in a nitrogen purged furnace. The oxygen remaining in the furnace and the water on the surface of the film will slightly oxidize it and stabilize the surface. The annealing time and temperature can be changed depending on the conditions of the furnace and the film. Annealing in this manner can also release the surface and internal hydrogen contained in the sacrificial layer during deposition. After being stabilized by this method, the structure of the sacrificial layer is still nearly the same as the original deposited film, but has been modified so that its change in high temperature can be reduced to 20 to a minimum, while still maintaining enough for effective separation Structure and composition. Figure 14 shows the deposited post hole network silicon. Its structure is almost unchanged after the annealing stabilization step. Fig. 15 shows the state of the film after being covered and subjected to high temperature treatment, and it still substantially maintains the original structure and porosity. If the film is not stabilized, it will appear very dense and contain often fewer pores. 19 200404340 5 发明. Description of the invention Another method for stabilizing the silicon sacrificial layer of the pillar hole network is hydrogen peroxide treatment. When treated with hydrogen peroxide solution Yin, hydrogen at and near the surface will react to form water, and the surface will be slightly oxidized. This will cause similar stability characteristics to the annealing process. The processing time and temperature also depend on the nature of the pore network material. Removal of volatiles from the sacrificial layer with a high surface-to-volume ratio can also be accomplished under reduced pressure or vacuum. 10 The method of the present invention also includes covering the sacrificial layer with a -covering medium. The cover medium forms the surface on which the system or components within it are constructed and can be used to stabilize the sacrificial layer. The covering medium can also provide additional protection of the sacrificial layer to shield it from chemicals and the like used in the subsequent manufacturing of the system. &Amp; The covering medium cannot be used in subsequent processing, especially in the system. Excessive deterioration during manufacture. The covering medium is spread on the sacrificial layer with the smallest void filling rate, resulting in a chemically resistant layer with mechanical durability and functionality. The cover material may include ceramics, metals, oxides, nitrides, semiconductors, insulators, and combinations thereof. The preferred covering medium is Si02 & Si3N4, which can also be used together in a laminated structure. 20 When manufacturing thin-film systems or components on flexible substrates, the problem of stress is very common, and it will cause "curling" after the impurity. The method of the present invention also solves this problem. The stress release system can be used in the variation method To achieve 'it uses a second sacrificial material to provide a path to the sacrificial layer (which may be the same or a different material) and form a stress relief zone for these system components. In this embodiment' of the present invention The method includes the following steps at or after the manufacturing steps but before the top layer is overlaid and before the release of the components. The system and the cover layer are selectively removed to form 20 200404340. Boundary island of invention description The void area of the block array. These island blocks are composed of devices, components, structural blocks, and overlying blocks; and-the sacrificial material is used to selectively fill the void area of the boundary island block. The sacrifice The material may be any sacrificial material, but not necessarily the same as the sacrificial layer, although it is also preferably a material with a high surface-to-volume ratio as described above. In the method of the present invention, the The resulting system is released from the mother substrate by removing the sacrificial material and the sacrificial layer. This can be done in a single step-simultaneously removing both the sacrificial material and the sacrificial layer, or in separate removal steps. Separate steps to complete. Preferably, the sacrificial material can be removed to form a path close to the sacrificial layer. After removing 10 times, the covering material will retain the island structure. These void areas will provide the final system The effect of stress release can also be used as a heat dissipation area during operation. The method of the present invention can be subjected to high temperature processing, so high-quality system component manufacturing or connection can be performed before releasing and making into the final substrate. High quality The components of the system can be connected to the system; or its manufacturing in the system can be completed with the present invention, because there will be no fixed processing temperature limit and stress problems. It is used as follows The first sacrificial material in the process can be any material that can withstand high temperatures and is chemically compatible with the process. An example of the material is Si & Si02. If used, such as in the first to the first Figure 8 example The second sacrificial material can be any material that can be easily removed, such as Si or other semiconductors, ceramics, metals, organics, polymers, or combinations thereof. The means of removing such sacrificial materials can be Chemical, physical methods, or some combination thereof. ^ After the system is manufactured, the method of the present invention also includes overlaying the system with polymer, glass, metal, ceramic, oxide, nitride, and ah 200404340 发明, Invention Description The steps of forming the top layer of an insulator, conductor, semiconductor, organic, plastic, or a combination thereof to form an encapsulation system. This top layer can also be a permanent top layer of the system, or it can be used The system is adhered to another substrate. In order to effectively adhere a top layer to the manufactured system before release 5 'surface chemical treatment and adhesion techniques known in the field can be used use. This can be done on the exposed surface of the system itself, or on a top layer that covers the system. The treatment and bonding technique may include covalently chemically bonding the surface using a chemical modifier on the surface, such as Shibaite, which reacts with an organic linking group. Adhesives can also be used, such as epoxy or resin, or dielectrics, glass or polymers that are spin-coated with incomplete curing. A particular embodiment of the present invention uses a spin-coated dielectric, such as phenylcyclobutane (BCB), which does not completely cure before being applied to plastic. The uncured BCB has solvents and active organics, and the system that helps to adhere a plastic film to BCB to combine a deposited plastic film such as paraiyne will have attractive characteristics because the BCB has light transmission. And dielectric properties, and the paralyne has light transmission and mechanical and chemical resistance properties. Therefore, in a preferred embodiment, a polymer layer is disposed on the system to form an encapsulation system, and the exposed surface of the top layer of the polymer is adjusted to strengthen the connection. Another layer of polymer, glass, metal or ceramic can be placed on the surface of the adjusted 20 polymer, or on another-substrate ±, which can be performed before or after the system is released from the mother substrate. . Another feature of the technology of the present invention is its tunability in the release process, which allows the removal of these sacrificial layers using vertical or horizontal or both micro-scale or nano-channel networks. Road to transport the sacrificial layer to 22 200404340 发明, invention description remover. The method of the present invention is provided with through holes and the like for accessing and removing the sacrificial layer or sacrificial material. Therefore, the method also includes causing through holes and the like to reach the sacrificial layer, or at least the sacrificial material. The position, size, and number of these vias can be defined using lithographic techniques, and the vias can be created by reactive ion etchant or other means known in the art. The through holes can be provided in the mother substrate, and a combination of a certain network can be formed in the plane of the mother substrate, or the thickness of the mother substrate can be passed to reach the sacrificial layer. The through holes are arranged to penetrate the top layer, the system or system area, the cover layer and the mother substrate. Figures 1 to 8 show the condition where the remover reaches the sacrificial layer through a vertical channel, and Figures 10 to 10 show an example of a process in which the remover approaches the sacrificial layer through a horizontal channel system. Figure 13b shows the removal agent entering through the mother substrate and a horizontal network of channels. The through-holes will look like pipes for chemicals (such as acids, solvents, or organic solvents) used to remove the sacrificial layer. The chemical will flow through these pipes and penetrate down to the top of the sacrificial layer, wet the sacrificial layer, and chemically attack the sacrificial layer material. In an experiment to verify such through-hole pipes, a metal sacrificial layer was steamed, and a 10-5 μm polymer layer was spin-coated on the glass of Coming 1737. After the through holes are defined by lithography and the holes are made by reactive ion etching, the sample is immersed in a 20 acid solution. The acid solution will enter the top surface of the sacrificial layer through the through-hole pipes to engrav the sacrificial layer and expand laterally. When the acid solution moves laterally and etches the sacrificial layer, the polymer coating is separated. With the further development of this separation procedure, the area of its separation gradually increased. As shown in Figures 5, 12, and 13, through-holes for chemical agents to approach the sacrificial layer can be provided in the base material of the mother 23,2004,043,340, the description of the invention, and the base material is a reusable material as described above. . By removing the sacrificial layer, the element structure and circuits on the laminated film can be released from the mother substrate. As mentioned above, the system made by the method of the present invention can be deployed on another substrate after it is released from the 5 mother substrate. The method of the present invention will be particularly suitable for manufacturing systems for deployment on flexible or non-planar substrates. These substrates may be temporary substrates or permanent substrates. After a system is released and transferred to the final substrate, or after the system is covered with the final substrate and separated from the parent substrate, an additional encapsulation step 10 may be performed. For example, if the components of the system are sandwiched between the final substrate and another appropriately selected material, and are located at or near a curved neutral plane, the stress on the system components will be reduced . The technology of the present invention uniquely allows high-quality and stress-reducing system components to be sandwiched in this way, further enhancing their adaptability and durability. Therefore, the method of the present invention 15 may also include the step of laying a layer on the cover material side of the system to form a structure that substantially positions the system in a neutral plane with reduced bending stress. As mentioned above, the invention disclosed herein includes a concept and manufacturing technology that can be applied to the manufacture of various systems and components of various systems, including 20 but not limited to transistors, diodes, electronic components, chemical components, Biological components, biochemical components, μ-body components, micro-electro-mechanical components, sensors, fuel cells, optoelectronic components, photovoltaic cells, optical structures, microelectronic components; displays' or circuit board systems, etc. Such chemical elements, biological elements, and biochemical elements include, but are not limited to, reactors. These systems can also be designed 24 200404340, invention description on small or large area substrates, and even on flexible substrates. These systems can also be built side-by-side "combined" on a large area substrate to create a single system or multiple systems. Moreover, the present invention can also be used to fabricate a multi-layered two-dimensional structure. These can also include micro fuel cells, photovoltaic cells, or 5 chemical reactor elements on a substrate. Fig. 9 shows a conceptual application of the present invention, that is, to make a "smart circuit board", which includes various components such as optical, optoelectronic, and electronic components. Some of these components can be fabricated directly, while others can be connected after the system is placed on the mother substrate. The system can be transferred to the final substrate (that is, the "substrate" in this example) after release, or the "10 substrate" layer can be attached to the system before the system is released. (Process example) (1) Process example mainly using a vertical remover passage. Figures 1 to 8 show a flow example of a removal process using a vertical passage. Figure 1 shows a sacrificial (first release) layer deposited on a smooth "mother" substrate, such as glass, quartz, fused silica, metal flakes, silicon, or any other flat surface. After being deposited on the mother substrate, the sacrificial layer is stabilized by a previously described process such as annealing. If necessary, one or most of the intermediate layers may be provided under the sacrificial layer. Figure 2 shows the deposition of a cover layer. 20 to 70 of these systems will be fabricated on the cover layer (see Figure 3). This is the first "building layer". All deposition steps can be accomplished by various means, including spin coating, physical deposition, chemical deposition, and chemical reactions. This cover layer also protects the sacrificial layer, provided that the material with a high surface-to-volume ratio is as shown in the figure. For example, when highly porous columnar silicon (see Figure 11) is used as the sacrificial layer, then 200404340 发明, invention description / oxygen-cut phase and pure micro-oxidation, or only column-cut Slight oxidation will preserve the structure of this high surface-to-volume sacrificial material. The further stabilization of such films may include the removal of hydrogen from the surface and the bulk via an annealing or chemical process. Figure 3 shows the element structure of the system at the time of manufacture. The first diagram shows an optional step: creating a recessed area (such as dry, wet, or laser melting) surrounding the structure of these elements, and sinking-sacrificial material as shown (the Two release layers) to fill these grooves. This material can be the same or different in the material of the first sacrificial layer, and it can replace (as shown in Fig. 4) a part of the first sacrificial layer, or it can be replaced (not shown). Including step ′ shown in Figure 4 can provide complete or at least partial mechanical, thermal, and electrical isolation of these system components during construction, as can be inferred from Figure 6b. 15 20 Regardless of whether the steps shown in Figure 4 are included, more building layers can also be provided as shown in Figure 5, for example, in Figure 5, it is shown that the polymer layer is deposited or adhered to These system components are structurally. The layers can also be formed in several layering steps 'and electrical interconnections or other structures of the system can also be provided in these building layers' and can be connected to vias (not shown) Other system components. -Or all of these building layers will form the final substrate or will first form a carrier layer to allow the system to be positioned on its final substrate. However, in any case, this bearing or final layer can be a film or plastic and is flexible. Vertical through holes, etc. can be made in these building layers by some process steps such as cutting or refining, as shown. It can be seen in the% chart, and the waiting hole can be edited to the first and second sacrificial layers—when the layer is provided. 26 200404340 (ii) Description of the invention Using these vertical vias, the second sacrificial material, when present, can also be gasified (gas escapes from the vias), dissolved (solvents enter through the vias), or etched (Etchant enters through vias) and the like. This second sacrificial layer can be removed first (as shown in Figures 6a and 6b), and then the fifth sacrificial layer can be removed (by the same or other means); or they can be removed in the same step (not Shows). However, in both cases, the first sacrificial layer is the key to separation from the mother substrate, and it must be removed by vaporization, dissolution, or etching. This is located at the bottom of Figure 7. Figure 8 shows the final result after the processing of Figure 7. These overlying island blocks may (as shown) 10 or may not be retained (not shown). At this point, the structure of Figure 8 can be bonded to other substrates as described above; or it can be further processed to cover the bottom with more material to improve mechanical strength and / or environmental durability; Or both are performed; and it can also be used with at least the top of the building layers as the final substrate. If more material is deposited or adhered to the bottom, the system components can be placed on or near the neutral plane of the final structure. Obvious changes in this process can also be used, including those that pass through the parent substrate (not shown) to access the sacrificial layer (or such sacrificial layers, if the isolation method of Figure 4 is used). Vertical through holes and so on. Please note that the system in Figure 20 was created using a process with the steps in Figure 4. Transistors made in this way will exhibit excellent performance on flexible substrates. (2) Example of a process using a horizontal remover passage mainly A micro-sized or nano-channel network mainly arranged in a water seat arrangement can also be used in the method of the present invention. Use micro-sized nano channels for transmission 27 200404340 发明, description of the invention can reduce the removal of sacrificial layers (such as etching
而大大地縮短去除所需的時間。 新鮮的反應劑、反應生成 輸去除劑及接近犧牲層的通路乃 物等，或兩者皆可在該等通道内傳輪來進—步加速其製程 以此方法可減少曝露於去除劑的時間 ，亦能使該製程設 計者有更多的材料選擇性。 在本例中，如前所述，於製造過程中該母基材能對該 ι〇等元件提供機械與溫度穩定性。此基材必須具有機械穩定 性以供執持移送，及在高溫的溫度穩定性，並具有與所擇 材料相容的膨脹係數。該母基材的材料選擇包括但不限於 半導體（如矽晶圓或薄片）、玻璃、熔凝的二氧化矽、石英 、陶瓷（如氧化鋁）、及金屬（如鋼）等。 15 在此分離變化例中之微尺寸或奈米通道乃可使用多種 方法來形成，包括··犧牲層處理，表面微加工，塊體微加 工’覆層技術，及其組合等。該等微尺寸或奈米通道可為 /母基材的永久構造，或亦可在犧牲層姓刻或後續的製程 中被除去。在某些情況下，如後所詳述，該等通道網路亦 可為該母基材的一部份，而在當沈積犧牲層時，即會完成 封閉该等通道的步驟。 本發明使用通道來促進分離之一實施例，其特徵即在 使用一種封閉覆蓋通道結構的製造方法。該結構係使用不 均一薄膜沈積製程，將一高縱橫比的溝槽圖案形成於一硬 28 200404340 玖、發明說明 質、光滑且高溫的基材上而來完成。此係示於第l〇(a)〜 (C)圖中。第10(d)至（g)圖則示出後續的系統製程，以及本 發明於前所述的分離程序。在第10(b)及（c)圖中所示的不 均一薄膜沈積，將能以一物理氣相沈積製程例如蒸發法及 5 濺射法而來輕易地完成。又，相對較均一的沈積技術，例 如化學氣相沈積（CVD)或電漿強化的化學氣相沈積 (PECVD)等，亦可經選擇適當的處理參數（如源氣體溫度、 源氣體流率、基材溫度、處理壓力）來被使用。舉例而言 ’一較南的處理Μ力將可被使用於CVD製程中，俾可增加 10 靠近溝槽開口處之沈積物的散射可能性（減少平均自由路） ，此將會使在開口附近比在溝槽的底部或側壁上產生更多 的沈積膜。藉控制其它的適當處理參數亦可達到類似的結 果0 在該覆蓋層封閉該等溝槽紋路的開口之後，該層或後 15續料層的沈積將可被用來平坦化該基材表面。若有必要， 化學機械拋光處理（CMP)亦可被用來平坦化。在第^(幻圖 中該平坦的覆蓋層沈積已被完成，且此層在完戚系統製 造後將會被用來作為該犧牲釋離層。 在第10(d)圖令，一覆蓋材料會被沈積在該犧牲層上。 20此覆蓋材料會被作為一阻隔層來隔絕化學處理步驟。此阻 隔層的材料、厚度及相關性質將會被選擇成，能在系統製 造及分離程序之後保留下來。此覆蓋層亦可藉改變該犧牲 層幻頂部（例如熱氧化）而來形成。 當完成該等元件製造，如第10(f)圖所示，-或多數 29 200404340 玖、發明說明 最終的構建層（如塑膠、玻璃等）將會被沈積或覆設。其即 會形成該系統釋離後，將之帶至某一新最終基材的支樓及 轉送媒體。惟其亦可為該最終基材。在釋離步驟時，該通 道網路會曝露於適當的化學物、氣體、及其它的去除劑， 5或它們的組合物中，而來選擇性地除掉該犧牲釋離層。當 一化學劑被用來溶解或餘刻該釋離層時，該等微流體結構 將會因強烈的毛細作用，而可形成化學劑的快速供應機構 。當反應氣體或電漿被用來作為去除劑時，該等微通道結 構亦可被用來作為反應劑的快速氣體供應路徑。在任何情 10況下，其釋離時間及對該等元件之任何可能傷害皆會減至 最少。第10(g)圖係示出一已分離的系統以及該母基材一其 可再使用。 前述由上封閉通道的覆蓋方法將可形成開放通道以供 除掉犧牲層。或者亦可將該犧牲層構建在該通道網路中， 15且兩者皆穿過該母基材。在母基材中的通道可被以一削除 (lift-off)的方式來填滿犧牲材料，且該犧牲材料的沈積嗣 可被持續來覆蓋整個母基材，或一微粒法亦可被使用。示 出使用於該等通道中之微粒者係僅可見於第12圖及第na 和13b圖中。其中一犧牲層去除劑會清除該等通道，而它 20 們較大的截面則可被用來供去除劑加速達到其餘（微粒或 非微粒）的犧牲層。在第13a圖中該通道清除步驟係被示出 在其流程的早先階段，此更可印證在有必要時其流程的可 調變性。在^第13a圖中，該去除劑將會前進達到在_向部 份的通道（未示出），並後續達到整個表面的犧牲層。在第 30 200404340 玖、發明說明 13b圖中’該去除劑會藉由設在母基材中的垂向通孔來前 進達到該等通道’如所示，然後達到整個表面的犧牲層。 第12A圖示A—單層或多層的奈米式微球體被以塗層 來設在一基材上。該塗層可包括自行組合劑（分子），空間 5組合物’或場辅助組合物。該奈米或微球體層的平坦化（ 第12B圖）係可藉在玻璃上旋轉（s〇G)，可重流氧化物，或 任何其它適當材料和方法來完成。第12C圖示出在該平坦 化表面上製成一系統。第12D圖示出在完成系統的製造之 後，覆設或沈積載體或最終基材。第12E&F圖示出一貫孔 10 t構的形成’其會由該結構的兩側（即E或ρ圖）來深入至該 球體層，而形成一管道可供去除劑進入來除掉該球體層。 第12G圖示出在除去該球體層之後，該系統已經由該母基 材分開。 第13a-A及B圖乃示出使用前述第12&-八至〇圖的方法 15來开々成通道結構。第η a-c圖示出使用適當的方法在該通 道結構上來製成系統。一移轉層例如塑膠或聚合物膜可被 沈積或覆設在所製成的系統上。第13a-D及E圖示出當該系 統製成後，該通道結構已與一化學劑接觸，其將會例如藉 毛細作用來流經該等通道’並攻擊在該通道結構與元件之 20 間的釋離層。此將會使該系統（圖中的上半部）與該母基材 分開（釋離）。 第13b-A圖不出使用第12A至C圖所述之方法，除了元 „件製造步驟以外，來形成該通道結橼而壙馮微尺寸或奈米 微球。在第13b-E圖中一元件會被製設二該結構上。第 31 200404340 玖、發明說明 13b-C圖示出由該結構的底部或頂部深入填滿微球之通道 、、’。構的貝孔會被形成。第13b-D及E圖示出使用該通道結構 及貝孔等而來除去該釋離層和微球。此將可使該頂部（元 件部）與母基材分離。 5 【圏式簡單說明】 第1圖示出以一適當的塗層技術在一硬層且平滑表面 的母基材上沈積一犧牲層； 第2圖示出在犧牲層上覆設一覆蓋層，· 第3圖示出在該覆蓋層上製成一功能系統； ) 第4圖示出蝕刻出包圍該等功能系統構件的溝槽深入 至該第犧牲層，並藉習知技術例如頂面削除（Hft-〇ff)法 來以第二犧牲材料填滿該等溝槽； 第5a(截面）圖及5b(頂視）圖乃示出一聚合物層的覆設 及貝孔的形成； 丨第6a(截面）圖及6b(頂視）圖乃示出第二犧牲材料被去 除； 第7圖不出該犧牲層被去除而在一聚合物基材上製成 一糸統如第8圖所示； 第8a圖為本發明之分離系統的一例； > 第8b圖示出一貫際的分離系統。在本例中，元件 係具有一撓性的塑膠最終基材； 第9圖示出本發明用來製成一‘‘智慧電路板，，的應用， 其含有例匆光學、光駕子及電子元件等各種構件；… 第10(a)圖示出一凹溝圖案設在一硬質且光滑的基板（ 32 200404340 玖、發明說明 母基板）上，例如矽片、石英、熔凝的二氧化矽、金屬、 片材，或玻璃板上； 第10(b)圖示出犧牲層的沈積，其最好係以一不均一的 薄膜塗層來形成； 5 第10(c)圖示出完成的犧牲層，並示出該凹溝圖案變成 封閉的微通道結構； 第10(d)圖示出一覆蓋材料的沈積，其可保護該犧牲層 及系統元件，以免遭受在釋離處理時底下之釋離層產生的 化學反應所影響； 10 第10(e)圖示出在該母基材上之通道結構的覆蓋層上來 製成習知的系統元件； 第10(f)圖示出使用旋塗法、CVD法、喷塗法、或任何 其它適當的技術，來沈積或塗設一聚合物（塑膠）膜； 第10(g)圖示出該系統包括該塑膠膜的釋離（分開），其 15 係將適當的化學或反應氣體供入經由該等微通道犧牲地溶 解該釋離層而來完成； 第11a圖為一種被沈積的分離層材料之實例，其能符 合表一的所有要件，該層為一沈積的柱孔矽材料。此材料 會被用來作為製成第8b圖之分離系統的分離層； 2〇 第1 lb圖為一沈積分離層的實例，其係由共價結合於 基材的二氧化矽奈米微粒所形成； 第12圖示出本發明使用微粒來作為犧牲層的方法； 第13a與13b圖示出使用微粒來作為犧牲層的方法，其 中泫母基材含有通道式貫，以接近該犧牲層； 33 200404340 玖、發明說明 第14圖示出所沈積的柱狀孔隙網路矽； 第15圖為該薄膜在覆蓋及高溫處理後的狀況，示出該 薄膜仍保有其某些結構質地和多孔性。 【圖式之主要元件代表符號表】 (無） 34And greatly reduce the time required for removal. Fresh reagents, reactants, removal and removal agents, pathways near the sacrificial layer, etc., or both can be passed through the channels to accelerate the process. This method can reduce the exposure time to the remover. It also enables the process designer to have more material selectivity. In this example, as mentioned previously, the mother substrate can provide mechanical and temperature stability to the ι0 and other components during the manufacturing process. The substrate must be mechanically stable for holding transfer, temperature stable at high temperatures, and have a coefficient of expansion compatible with the selected material. The material selection of the mother substrate includes, but is not limited to, semiconductors (such as silicon wafers or wafers), glass, fused silica, quartz, ceramics (such as alumina), and metals (such as steel). 15 The micro-size or nano-channels in this variation of separation can be formed using a variety of methods, including ... sacrificial layer treatment, surface micromachining, block micromachining 'cladding technology, and combinations thereof. The micro-scale or nano-channels can be a permanent structure of the mother substrate, or they can be removed in the sacrificial layer engraving or in subsequent processes. In some cases, as detailed below, the network of channels may also be part of the mother substrate, and the step of closing the channels is completed when a sacrificial layer is deposited. One embodiment of the present invention that uses channels to facilitate separation is characterized by the use of a method of manufacturing a closed cover channel structure. This structure is completed by using a non-uniform thin film deposition process to form a high aspect ratio trench pattern on a hard, smooth, high-temperature substrate. This is shown in Figures 10 (a) to (C). Figures 10 (d) to (g) show the subsequent system processes and the separation procedure of the present invention as described above. The heterogeneous thin film deposition shown in Figures 10 (b) and (c) can be easily completed by a physical vapor deposition process such as evaporation and 5 sputtering. In addition, relatively uniform deposition technologies, such as chemical vapor deposition (CVD) or plasma-enhanced chemical vapor deposition (PECVD), etc., can also be selected by appropriate processing parameters (such as source gas temperature, source gas flow rate, Substrate temperature, processing pressure). For example, 'a southerly processing M force can be used in the CVD process, which can increase the probability of scattering of deposits near the trench opening by 10 (reducing the average free path), which will make it near the opening. Produces more deposited film than on the bottom or sidewalls of the trench. Similar results can also be achieved by controlling other appropriate processing parameters. After the cover layer closes the openings of the grooves, the deposition of this layer or the subsequent layers can be used to flatten the surface of the substrate. If necessary, chemical mechanical polishing (CMP) can also be used for planarization. The deposition of the flat cover layer has been completed in the imaginary figure, and this layer will be used as the sacrificial release layer after the manufacturing of the system. In the order of FIG. 10 (d), a cover material It will be deposited on the sacrificial layer. 20 This cover material will be used as a barrier layer to isolate the chemical processing step. The material, thickness and related properties of this barrier layer will be selected to be retained after the system manufacturing and separation process Down. This cover layer can also be formed by changing the magic top of the sacrificial layer (such as thermal oxidation). When the manufacturing of these components is completed, as shown in Figure 10 (f),-or most 29 200404340 40, the final description of the invention The building layer (such as plastic, glass, etc.) will be deposited or overlaid. It will form the system and release it to a branch of a new final substrate and transfer the media. However, it can also be the Final substrate. During the release step, the channel network will be exposed to appropriate chemicals, gases, and other removal agents, 5 or combinations thereof, to selectively remove the sacrificial release layer. When a chemical is used to dissolve or In the release layer, these microfluidic structures will form a rapid supply mechanism of chemical agents due to strong capillary action. When a reactive gas or plasma is used as a remover, these microchannel structures can also be It is used as a fast gas supply path for the reactants. In any case, its release time and any possible damage to these components will be minimized. Figure 10 (g) shows a separated The system and the mother substrate can be reused. The aforementioned covering method from the upper closed channel will form an open channel for removing the sacrificial layer. Alternatively, the sacrificial layer can also be built in the channel network. 15 and Both pass through the mother substrate. The channels in the mother substrate can be filled with the sacrificial material in a lift-off manner, and the deposition of the sacrificial material can be continued to cover the entire mother substrate. Materials, or a particle method can also be used. The particles shown in these channels are only visible in Figure 12 and Figures na and 13b. One of the sacrificial layer removers will clear these channels, and Their larger sections can be used for The agent accelerates to the rest (particulate or non-particulate) of the sacrificial layer. In Figure 13a, the channel removal step is shown at an earlier stage of its process, which further confirms the tunability of its process when necessary. ^ In Figure 13a, the remover will advance to the channel (not shown) in the _ direction, and then reach the sacrificial layer of the entire surface. In Figure 30 200404340, the description of invention 13b, 'The remover These channels will be reached by vertical through holes provided in the mother substrate, as shown, and then to the entire surface of the sacrificial layer. Figure 12A Figure A—Single or multi-layer nano-type microspheres The coating is provided on a substrate. The coating may include a self-combination agent (molecule), a space 5 composition ', or a field-assisted composition. The planarization of the nano or microsphere layer (Figure 12B) may be This can be accomplished by spinning (sog) on glass, reflowing the oxide, or any other suitable material and method. Fig. 12C shows a system made on the planarized surface. Figure 12D shows the carrier or final substrate being overlaid or deposited after the system has been manufactured. Figure 12E & F shows the formation of a through-hole 10 t structure, which will penetrate into the sphere layer from both sides of the structure (ie, E or ρ map), and form a pipe for the removal agent to enter to remove the Sphere layer. Figure 12G shows that after removing the sphere layer, the system has been separated by the parent substrate. Figures 13a-A and B show the use of method 15 of Figures 12 & Figures na-c show the use of appropriate methods to make a system on this channel structure. A transfer layer such as a plastic or polymer film can be deposited or overlaid on the finished system. Figures 13a-D and E show that when the system is made, the channel structure has come into contact with a chemical agent, which will, for example, flow through the channels by capillary action and attack 20 of the channel structure and components. Between the ionosphere. This will separate (release) the system (top half of the figure) from the mother substrate. Figures 13b-A do not show the method described in Figures 12A to C. In addition to the element manufacturing steps, the channel is formed and the micro-size or nano-microspheres are formed. In Figures 13b-E One element will be made on the structure. Section 31 200404340 发明, Description of Invention 13b-C shows that the bottom or top of the structure is deeply filled with microsphere channels, and the structure's hole will be formed. Figures 13b-D and E show the use of the channel structure, beakers, etc. to remove the release layer and microspheres. This will separate the top (element portion) from the mother substrate. 5 [圏 式 简 解Figure 1 shows the deposition of a sacrificial layer on a hard and smooth surface mother substrate with an appropriate coating technique; Figure 2 shows a cover layer over the sacrificial layer, Figure 3 shows A functional system is formed on the cover layer; FIG. 4 shows that the trenches surrounding the functional system components are etched down to the first sacrificial layer, and are removed by conventional techniques such as top surface removal (Hft-〇ff ) Method to fill the trenches with a second sacrificial material; Figures 5a (section) and 5b (top view) show a polymer layer Let us consider the formation of becons; 丨 Figures 6a (cross-section) and 6b (top view) show that the second sacrificial material is removed; Figure 7 does not show that the sacrificial layer is removed and made on a polymer substrate The integrated system is shown in Fig. 8. Fig. 8a is an example of the separation system of the present invention. ≫ Fig. 8b shows a consistent separation system. In this example, the component has a flexible plastic final base. Figure 9 shows the application of the present invention to make a `` smart circuit board, '' which contains various components such as optical, optical drivers and electronic components; ... Figure 10 (a) shows a The groove pattern is provided on a hard and smooth substrate (32 200404340 玖, mother substrate of the invention description), such as silicon wafer, quartz, fused silica, metal, sheet, or glass plate; Section 10 (b ) Shows the deposition of a sacrificial layer, which is preferably formed with an uneven thin film coating; 5 Figure 10 (c) shows the completed sacrificial layer, and shows that the groove pattern becomes a closed microchannel Structure; Figure 10 (d) shows the deposition of a cover material that protects the sacrificial layer and system components to Affected by the chemical reaction generated by the underlying release layer during the release process; Figure 10 (e) shows a conventional system element made on the cover layer of the channel structure on the mother substrate; Figure 10 (f) illustrates the use of spin coating, CVD, spray, or any other suitable technique to deposit or apply a polymer (plastic) film; Figure 10 (g) illustrates that the system includes the The release (separation) of the plastic film is accomplished by supplying an appropriate chemical or reactive gas to the sacrificial dissolution of the release layer through the microchannels; Figure 11a is an example of a deposited layer material It can meet all the requirements of Table 1. This layer is a deposited pillar hole silicon material. This material will be used as the separation layer for the separation system of Fig. 8b; Fig. 1 lb is an example of a deposited separation layer, which is made of silica dioxide nanoparticles covalently bound to the substrate. Formation; FIG. 12 illustrates a method of using particles as a sacrificial layer according to the present invention; FIGS. 13a and 13b illustrate a method of using particles as a sacrificial layer, wherein the mother substrate contains a channel-shaped channel to approach the sacrificial layer; 33 200404340 发明, description of the invention Figure 14 shows the deposited columnar pore network silicon; Figure 15 shows the condition of the film after covering and high temperature treatment, showing that the film still retains some of its structural texture and porosity. [Representative Symbols for Main Components of the Schematic] (None) 34