TW200403509A - Liquid crystal display panel having reduced flicker - Google Patents
Liquid crystal display panel having reduced flicker Download PDFInfo
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- TW200403509A TW200403509A TW092118129A TW92118129A TW200403509A TW 200403509 A TW200403509 A TW 200403509A TW 092118129 A TW092118129 A TW 092118129A TW 92118129 A TW92118129 A TW 92118129A TW 200403509 A TW200403509 A TW 200403509A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60P—VEHICLES ADAPTED FOR LOAD TRANSPORTATION OR TO TRANSPORT, TO CARRY, OR TO COMPRISE SPECIAL LOADS OR OBJECTS
- B60P7/00—Securing or covering of load on vehicles
- B60P7/02—Covering of load
- B60P7/04—Covering of load by tarpaulins or like flexible members
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60J—WINDOWS, WINDSCREENS, NON-FIXED ROOFS, DOORS, OR SIMILAR DEVICES FOR VEHICLES; REMOVABLE EXTERNAL PROTECTIVE COVERINGS SPECIALLY ADAPTED FOR VEHICLES
- B60J7/00—Non-fixed roofs; Roofs with movable panels, e.g. rotary sunroofs
- B60J7/08—Non-fixed roofs; Roofs with movable panels, e.g. rotary sunroofs of non-sliding type, i.e. movable or removable roofs or panels, e.g. let-down tops or roofs capable of being easily detached or of assuming a collapsed or inoperative position
- B60J7/12—Non-fixed roofs; Roofs with movable panels, e.g. rotary sunroofs of non-sliding type, i.e. movable or removable roofs or panels, e.g. let-down tops or roofs capable of being easily detached or of assuming a collapsed or inoperative position foldable; Tensioning mechanisms therefor, e.g. struts
- B60J7/1204—Control devices, e.g. for compensating tolerances, for defining movement or end position of top, for tensioning the top or for switching to an emergency mode
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60J—WINDOWS, WINDSCREENS, NON-FIXED ROOFS, DOORS, OR SIMILAR DEVICES FOR VEHICLES; REMOVABLE EXTERNAL PROTECTIVE COVERINGS SPECIALLY ADAPTED FOR VEHICLES
- B60J7/00—Non-fixed roofs; Roofs with movable panels, e.g. rotary sunroofs
- B60J7/08—Non-fixed roofs; Roofs with movable panels, e.g. rotary sunroofs of non-sliding type, i.e. movable or removable roofs or panels, e.g. let-down tops or roofs capable of being easily detached or of assuming a collapsed or inoperative position
- B60J7/12—Non-fixed roofs; Roofs with movable panels, e.g. rotary sunroofs of non-sliding type, i.e. movable or removable roofs or panels, e.g. let-down tops or roofs capable of being easily detached or of assuming a collapsed or inoperative position foldable; Tensioning mechanisms therefor, e.g. struts
- B60J7/14—Non-fixed roofs; Roofs with movable panels, e.g. rotary sunroofs of non-sliding type, i.e. movable or removable roofs or panels, e.g. let-down tops or roofs capable of being easily detached or of assuming a collapsed or inoperative position foldable; Tensioning mechanisms therefor, e.g. struts with a plurality of rigid plate-like elements or rigid non plate-like elements, e.g. with non-slidable, but pivotable or foldable movement
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60Y—INDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
- B60Y2200/00—Type of vehicle
- B60Y2200/10—Road Vehicles
- B60Y2200/14—Trucks; Load vehicles, Busses
Abstract
Description
200403509 五、發明說明(l) 發明所屬之技術領域 本發明係關於一種液晶顯示面板(1 i q u i d c r y s t a 1 display panel, LCD panel),特別是一種低閃爍液晶顯 不面板。 先前技術 薄膜電晶體液晶顯示面板(thin film transistor LCD),主要是利用成矩陣狀排列的薄膜電晶體,配合適 當的電子元件來驅動液晶像素,以產生豐富亮麗的圖 形。由於薄膜電晶體液晶顯示面板具有外型輕薄、耗電 量少以及無輻射污染等特性,因此被廣泛地應用在筆記 型電腦(notebook)、個人數位助理(PDA)等攜帶式資訊產 品上,甚至已有逐漸取代傳統桌上型電腦之CRT監視器的 趨勢。 請參考圖一與圖二,圖一為習知一薄膜電晶體液晶 顯不面板的示意圖,圖二則為一薄膜電晶體液晶顯示面 板之單一像素的等效電路示意圖。如圖一所示,一液晶 顯示面板1 〇包含有一下基板i 2,下基板1 2包含有一像素 ^列(Pixel array)區14、一掃描線驅動電路區16以及一 資料線驅動電路區18。其中,像素陣列區丨4内包含有複 數條掃描線(s c a η 1 i n e,未顯示)與複數條資料線(d a t a200403509 V. Description of the invention (l) Technical field to which the invention belongs The present invention relates to a liquid crystal display panel (1 i q u i d c r y s t a 1 display panel, LCD panel), particularly a low flicker liquid crystal display panel. In the prior art, thin film transistor LCDs mainly used thin-film transistors arranged in a matrix and equipped with appropriate electronic components to drive liquid crystal pixels to produce rich and beautiful graphics. Thin-film transistor liquid crystal display panels are widely used in portable information products such as notebooks and personal digital assistants (PDAs) because they are thin and light, consume less power, and have no radiation pollution. CRT monitors have gradually replaced traditional desktop computers. Please refer to FIGS. 1 and 2. FIG. 1 is a schematic diagram of a conventional thin-film transistor liquid crystal display panel, and FIG. 2 is a schematic diagram of an equivalent circuit of a single pixel of a thin-film transistor liquid crystal display panel. As shown in FIG. 1, a liquid crystal display panel 10 includes a lower substrate i 2, and the lower substrate 12 includes a pixel array region 14, a scan line driving circuit region 16, and a data line driving circuit region 18. . The pixel array region 4 includes a plurality of scanning lines (s c a η 1 i n e, not shown) and a plurality of data lines (d a t a
200403509 五、發明說明(2) 1 i ne,未顯示),且各該掃描線與各該資料線係定義出複 數個像素(pixel),如圖一所示之像素a〜C以及像素 B’〜C’,其中像素A〜C係電連接於同一條掃描線,而像素 A、B’及C’則是電連接於同一條資料線。 如圖一所示,掃描線驅動電路區丨6内包含有複數個 驅動積體電路晶片(如晶片1 6 a〜1 6 c )以及複數條匯流線 1 7,而各匯流線1 7係用來電連接各該驅動積體電路晶 片。其中各該驅動積體電路晶片是利用覆晶技術(chi ροή-glass , C0G)而直接 製作於 下基板 12表面 ,而 各匯流 線1 7亦是直接製作於下基板1 2上,此即所謂的w〇A (wiring on array)設計。 如圖二所示,一像素2 〇至少包含有一液晶單元lc與 一薄膜電晶體TFT,其中液晶單元LC係由一像素電極 (pixel electrode)、一共通電極 〇£((:〇111111〇11(3〇111^61- electrode)、以及一液晶分子層所組成。而薄膜電晶體 T F T則包含有一閘極連接至一掃描線G L 〇、一汲極連揍至一 資料線DL〇、以及一源極連接至液晶單元LC的像素電極, 由於該閘極與該源極部份重疊,因而產生一寄生電容G § 於該閘極與該源極之間。此外,像素2 0另包含有一儲存 電容(storage capacitor)SC連接液晶單元LC與一掃描線 GIm,儲存電容SC係用來減少漏電流對液晶單元Lc的電壓 的影響,亦即用來協助液晶單元LC儲存電荷。200403509 V. Description of the invention (2) 1 i ne, not shown), and each of the scanning lines and each of the data lines defines a plurality of pixels (pixels a to C and pixel B 'as shown in Fig. 1). ~ C ', where pixels A ~ C are electrically connected to the same scan line, and pixels A, B', and C 'are electrically connected to the same data line. As shown in FIG. 1, the scanning line driving circuit area 6 includes a plurality of driving integrated circuit chips (such as wafers 16a to 16c) and a plurality of bus lines 17, and each bus line 17 is used for Incoming calls are connected to each of the drive integrated circuit chips. Each of the driving integrated circuit wafers is directly fabricated on the surface of the lower substrate 12 by using a chip-on-glass (C0G) technology, and each of the bus lines 17 is also directly fabricated on the lower substrate 12. This is so-called W〇A (wiring on array) design. As shown in FIG. 2, a pixel 20 includes at least a liquid crystal cell lc and a thin film transistor TFT. The liquid crystal cell LC is composed of a pixel electrode and a common electrode. 0 ((: 〇111111〇11 ( 3〇111 ^ 61-electrode) and a liquid crystal molecular layer. The thin film transistor TFT includes a gate connected to a scan line GL 0, a drain connected to a data line DL 0, and a source The gate electrode is connected to the pixel electrode of the liquid crystal cell LC, and because the gate and the source partially overlap, a parasitic capacitance G is generated between the gate and the source. In addition, the pixel 20 also includes a storage capacitor. A storage capacitor SC connects the liquid crystal cell LC and a scanning line GIm. The storage capacitor SC is used to reduce the influence of the leakage current on the voltage of the liquid crystal cell Lc, that is, to assist the liquid crystal cell LC to store electric charges.
200403509200403509
由於施加於 一定的關係,因 在液晶單元LC上 光穿透度,再配 定之晝面。而施 CE與像素電極之 像素電極並未$ (floating)狀態 動,將會透過寄 電壓,因而使得 定之值。而此電 voltage, VFD), 欣晶單 此只要 的電壓 合以均 加在液 間的電 接至任 ,此時 生的電 施加在 壓變動 其可表 元LC上 依據所 ,即可 勻的光 晶單元 壓差, 何電壓 像素電 容而耦 液晶單 量稱為 示為: 的電壓 要顯示 將各個 源,便 LC上的 薄膜 , 而 極的周 合至像 元LC上 饋路流 田 源 與光的穿透度具有 的晝面來控制施加 像素設定在適當的 了使顯不器產生預 電壓係為共通電極 電晶體TFT關閉時, 處在浮動 圍若有任何電壓變 素電極,並改變其 的電壓偏離原先設 電壓(feed-throughBecause it is applied to a certain relationship, the light transmittance in the liquid crystal cell LC is set by the daylight surface. However, the pixel electrode of CE and the pixel electrode is not in the floating state, and it will pass the voltage, thus making it a fixed value. And this voltage (VFD), Xinjing only needs the voltage combined with the electricity applied to the liquid to take over. At this time, the generated electricity is applied to the voltage change, which can be uniformly expressed on the element LC. Photovoltaic cell voltage difference, what voltage pixel capacitance is coupled to the liquid crystal unit is called as: The voltage to be displayed will be from each source, the thin film on the LC, and the pole's circumference to the pixel LC feed path Liu Tianyuan and light The penetrating degree has a diurnal surface to control the applied pixels set to be appropriate so that the display generates a pre-voltage system for the common electrode. When the transistor TFT is turned off, if there is any voltage-varying electrode in the floating range, and its Voltage deviates from the original set voltage
CDCD
Vfd=[Cgs/(c^csc+cgs)]^ V 儲存電容sc之電=^内,Clg%液晶單元^之電容,。— 的寄生電容,Λ V 、㈤薄膜電晶體TFT之閘極與源極間 幅。一般而古,π剔為施加於掃描線上之脈衝電壓之振 〇 vF所造成之;鎚Ί : ί ί ί,極CE之電壓便可以消除 應,使得施加;掃二2 f,插線内的電阻及電容效 edge)會有圓角化f田線衝電壓之負緣(falling 像素距離掃推線的情形,因而造成Vfd會隨著 緣的輸入端(input end)越遠而越小,也就Vfd = [Cgs / (c ^ csc + cgs)] ^ V The electric capacity of the storage capacitor sc = ^, the capacitance of the Clg% liquid crystal cell ^. — The parasitic capacitance of Λ V, the amplitude between the gate and source of the thin film transistor TFT. Generally, π-tick is caused by the vibration of the pulse voltage applied to the scanning line, 0vF; Hammer Ί: ί ί, the voltage of the pole CE can eliminate the application, so that the application; sweep 2 f, the The resistance and capacitance effect edge) will fillet the negative edge of the field voltage (falling pixels away from the sweep line), so that Vfd will become smaller as the input end of the edge is farther away. on
第10頁 200403509 五、發明說明(4) 是說,圖一所示之像素A、B與C的V F妁關係將為(V FD) A> (VFD) B>(VFD)c°因此,所有像素的V F所造成的影響便很難 經由調整共通電極CE之電壓而消除,此將導致液晶顯示 面板1 0產生晝面閃爍(f 1 i c k e r )的情形。 另一方面,由於掃描線驅動電路1 6内的匯流線1 7具 有相當大的電阻值,因此當一脈衝電壓自匯流線1 7輸入 各該驅動積體電路晶片時5各該驅動積體電路晶片之輸 入電壓會有所不同,進而導致各該驅動積體電路晶片的 輸出電壓之波形(waveform)不同。例如,如圖三所示, 驅動積體電路晶片1 6 a所輸出的電壓差(△ V GA)最高,驅動 積體電路晶片1 6b戶斤輸出的電壓差(△ V GB’)次之,而驅動 積體電路晶片1 6c所输出的電壓差(△ V GC’)再次之,因而 造成V FD會隨著像素距離資料線的輸入端(i n p u t e n d )越遠 而越小,亦即圖一所示之像素A、B’與C’的V FI^j關係為 (VFD)A>(VFD)B’ >(VFD)C’,因而導致畫面產生閃爍的情形,降 低液晶顯不面板的顯不品質。 發明内容 本發明的目的是提供一種低閃爍液晶顯示面板,並 使該液晶顯不面板内的各個像素均具有約略相同的V fd’ 以改善前述之缺失。Page 10 200303509 V. Description of the invention (4) It means that the VF 妁 relationship between the pixels A, B and C shown in Figure 1 will be (V FD) A > (VFD) B > (VFD) c ° Therefore, all The influence caused by the VF of the pixel is difficult to be eliminated by adjusting the voltage of the common electrode CE, which will cause the liquid crystal display panel 10 to generate a flicker (f 1 icker). On the other hand, since the bus lines 17 in the scan line driving circuit 16 have a relatively large resistance value, when a pulse voltage is input from the bus line 17 to each of the driving integrated circuit chips, each of the driving integrated circuits is 5 The input voltage of the chip will be different, which will result in different waveforms of the output voltage of each driving integrated circuit chip. For example, as shown in FIG. 3, the voltage difference (△ V GA) outputted by the driving integrated circuit chip 16 a is the highest, and the voltage difference (△ V GB ') outputted by the driving integrated circuit chip 16 b is the second, The voltage difference (△ V GC ') output by the driving integrated circuit chip 16c is the same again, thus causing V FD to decrease as the pixel is farther away from the input end of the data line, which is shown in Figure 1. The V FI ^ j relationship between the pixels A, B 'and C' shown is (VFD) A > (VFD) B '> (VFD) C', thus causing the screen to flicker, reducing the display of the liquid crystal display panel. No quality. SUMMARY OF THE INVENTION An object of the present invention is to provide a low-flicker liquid crystal display panel, and each pixel in the liquid crystal display panel has approximately the same V fd 'to improve the aforementioned defects.
第11頁 200403509 五、發明說明(5) 依據本發明之目的,本發明的較佳實施例係提供一 種液晶顯示面板,該液晶顯示面板包含有一上基板、一 下基板以及複數個像素設於該上基板與該下基板之間, 且各該像素至少包含有一補償電容,用來使各該像素獲 得一約略相同之饋路流電壓,以減少該液晶顯示面板之 閃爍效應。 由於本發明係於各像素内加入一補償電容,而各該 補償電容係由各該像素電極與各該像素電極所對應之掃 描線所重疊的重疊區域所組成,再藉由調整各該補償電 容的電容值,以達到使各該像素之V F釣略相同之目的, 藉以減少液晶顯示面板之閃燦效應,進而提升液晶顯示 面板之顯示品質。 實施方式 請參考圖四’圖四係為本發明之液晶顯不面板之等 效電路圖。如圖四所示,等效電路4 0至少包含有像素A、 B與C,而像素A、B與C的位置係分別對應於圖一所示之像 素A、B與C。像素A包含有一液晶單元LC與一薄膜電晶體 T A,液晶單元L C係由一像素電極、一共通電極CE、以及一 液晶分子層所組成,因此液晶單元LC可視為一液晶電 容,而薄膜電晶體T具有一閘極連接至掃描線GL 〇、一汲 極連接至資料線DL 〇、以及一源極連接至液晶單元LC的像Page 11 200303509 V. Description of the invention (5) According to the purpose of the present invention, a preferred embodiment of the present invention provides a liquid crystal display panel. The liquid crystal display panel includes an upper substrate, a lower substrate, and a plurality of pixels provided thereon. Between the substrate and the lower substrate, each of the pixels includes at least one compensation capacitor, which is used for each of the pixels to obtain a substantially the same feed current voltage to reduce the flicker effect of the liquid crystal display panel. Since the present invention adds a compensation capacitor to each pixel, each compensation capacitor is composed of an overlapping area where each pixel electrode and a scanning line corresponding to each pixel electrode overlap, and then each compensation capacitor is adjusted by adjusting To achieve the purpose of making the VF of each pixel slightly the same, thereby reducing the flicker effect of the liquid crystal display panel, thereby improving the display quality of the liquid crystal display panel. Embodiments Please refer to FIG. 4 'FIG. 4 is an equivalent circuit diagram of a liquid crystal display panel of the present invention. As shown in FIG. 4, the equivalent circuit 40 includes at least pixels A, B, and C, and the positions of the pixels A, B, and C correspond to the pixels A, B, and C shown in FIG. 1, respectively. Pixel A includes a liquid crystal cell LC and a thin film transistor TA. The liquid crystal cell LC is composed of a pixel electrode, a common electrode CE, and a liquid crystal molecular layer. Therefore, the liquid crystal cell LC can be regarded as a liquid crystal capacitor, and the thin film transistor T has an image in which a gate is connected to the scan line GL 0, a drain is connected to the data line DL 0, and a source is connected to the image of the liquid crystal cell LC.
第12頁 200403509 五、發明說明(6) 素電極,並且由於該閘極與該源極部份重疊,因而形成 一寄生電容GS於該閘極與該源極之間。此外,像素A另包 含有一補償電容C’ A與一儲存電容SCA,補償電容C’ #連 接液晶單元LC之像素電極與掃描線GLg,而儲存電容SC則 連接液晶單元LC之像素電極與掃描線GL广 相同地,像素B包含有一液晶單元LC、一薄膜電晶體 TB、一儲存電容SCB、以及一補償電容C’ B,並且薄膜電晶 體T約閘極與源極係部份重疊,因而產生一寄生電容 GSB。而像素C則是由一液晶單元LC、一薄膜電晶體Tc、一 儲存電容SC c、以及一補償電容C’所組成,由於薄膜電晶 體T钓閘極與源極係部份重疊,因此像素C還具有一寄生 電容GSC。 如圖四所示,由於各補償電容C’ a、C’與C’禕分別與 電容GSa、GS與G.S在聯’因此方程式(1 )可改寫成下式: V [ ( C GS+ C ) / ( C LC+ C SC+ C GS+ C ) ] *△ V G ( 2 ) 其中C為補償電容C’之電容。一般而言,在方程式 (1 )與方程式(2 )中,儲存電容SC與液晶單元LC的電容皆 約為寄生電容GS與補償電容C’的數十倍,也就是說,Csc, CLC >> C GS, C,因此,方程式(2 )又可簡化成下式:Page 12 200403509 V. Description of the invention (6) The element electrode, and since the gate electrode partially overlaps with the source electrode, a parasitic capacitance GS is formed between the gate electrode and the source electrode. In addition, the pixel A further includes a compensation capacitor C ′ A and a storage capacitor SCA. The compensation capacitor C ′ # is connected to the pixel electrode of the liquid crystal cell LC and the scan line GLg, and the storage capacitor SC is connected to the pixel electrode of the liquid crystal cell LC and the scan line. GL is the same. The pixel B includes a liquid crystal cell LC, a thin film transistor TB, a storage capacitor SCB, and a compensation capacitor C ′ B. The thin film transistor T partially overlaps the gate and source systems, so that A parasitic capacitor GSB. The pixel C is composed of a liquid crystal cell LC, a thin film transistor Tc, a storage capacitor SC c, and a compensation capacitor C ′. Since the thin film transistor T and the gate electrode partially overlap with the source system, the pixel C C also has a parasitic capacitance GSC. As shown in Figure 4, since the compensation capacitors C'a, C ', and C' 与 are connected to the capacitors GSa, GS, and GS ', respectively, the equation (1) can be rewritten as follows: V [(C GS + C) / (C LC + C SC + C GS + C)] * △ VG (2) where C is the capacitance of the compensation capacitor C ′. In general, in the equations (1) and (2), the capacitances of the storage capacitor SC and the liquid crystal cell LC are each several tens of times the parasitic capacitance GS and the compensation capacitance C ', that is, Csc, CLC > > C GS, C, so equation (2) can be simplified into the following formula:
第13頁 五、發明說明(7) (3)Page 13 V. Description of Invention (7) (3)
Vfd=[(Cgs+C)/(Clc+Csc)]*a v 如圖四與方程式(3)所示,由 電容效應(如前所述),若伟於掃插線GL朽的電阻及 (Cs^B'CCsc)^ (CT)=fr GS a'(Cgs)b=(Cgs)c' (CSc)a=Vfd = [(Cgs + C) / (Clc + Csc)] * av As shown in Figure 4 and equation (3), the capacitance effect (as described above), if greater than the resistance of the sweep line GL and ( Cs ^ B'CCsc) ^ (CT) = fr GS a '(Cgs) b = (Cgs) c' (CSc) a =
蛊⑽v认 C A Lc)尸(CLc)與CA=CB=cc,則像素A、B ^ F酌關係將為(V FD) A> ( V pD) B> ( V Fd) C,而此將導致液晶 顯不面板產生晝面閃爍的情形。因此,為了降低液晶顯 示面板產生畫面閃爍的情形,則必須讓像素A、瞒C的V FD 約,相同,而根據方程式(3 ),可藉由調整各像素的補償 電容c’、閘極與源極間的寄生電容cGS、或是儲存電容 C SC ’來達到讓各像素的v ^勺略相同之目的,而調整的方 式為: 方程式(3)所示,當 Ca<Cb<Cc、(Cgs)a=(Cgs)b=(Cgs)c、 ^:山-(^)『(^)與(^山=(^)尸(^)。,則像素八-六Γ,Γϋ關?可為(Vfd)a% (vfd)c。因此,若使補償電 ^ ,電容C隨著像素距離掃描的輸入端越遠而漸增, 可使各像素的VF趵略相同。认 v recognize CA Lc) corpse (CLc) and CA = CB = cc, then the appropriate relationship between pixels A and B ^ F will be (V FD) A > (V pD) B > (V Fd) C, and this will cause The liquid crystal display panel has a diurnal flicker. Therefore, in order to reduce the flicker of the liquid crystal display panel, the V FD of the pixels A and C must be the same, and according to equation (3), the compensation capacitance c ′, gate and The parasitic capacitance cGS between the sources or the storage capacitance C SC 'can achieve the purpose of making the v ^ of each pixel slightly the same, and the adjustment method is as shown in equation (3), when Ca < Cb < Cc, ( Cgs) a = (Cgs) b = (Cgs) c, ^: Mountains-(^) 『(^) and (^ Mountains = (^) Corpse (^)., Then the pixels are eight-six Γ, Γϋguan? OK? It is (Vfd) a% (vfd) c. Therefore, if the compensation voltage is increased, the capacitance C gradually increases as the pixel is farther away from the input terminal of the scan, and the VF of each pixel can be made slightly the same.
2)口程。3)所示,當(Cgs)a<Cgs)b<(Cgs)c、w ϋ SC)B=( SC)與(Clc)A=(Clc)b=(Cu:)C’ 同樣可使像 i生ί 3系為(、)^ν ^ 戶斤以,身 丨t ί奋的電谷Cg隨著像素距離掃描線的輸人端越 而漸增,貝li可使各像素的Vp約略相同。2) Oral process. 3) As shown, when (Cgs) a < Cgs) b < (Cgs) c, w ϋ SC) B = (SC) and (Clc) A = (Clc) b = (Cu:) C 'can also make the image The 3 series are (,) ^ ν ^ households, the body's electric valley Cg gradually increases with the distance from the input end of the scanning line to the pixel, and the Vp of each pixel can be approximately the same. .
第14頁 200403509 五、發明說明(8)Page 14 200403509 V. Description of the invention (8)
與 電 減 (CGS)A-(CGS)B=(CGS)與(Clc)a=(c ^的ϋ關係為^FD)A, (Vfd)bW (Vfd)c。因此,吏/^Β 谷Γϊ:容Σs ί ί像素距離掃描線的輸入端越遠而漸 ,各像素的vF也會約略相同。 新 值得一提的是,上述$ M、 Htr -V' / ο Λ « y. , 方式(1)、方式(2)與方式 還可彼此搭配,以達到謓夂推Iv从Μ上1 3) ” π % Q < ^系各像素的V F釣略相同之目的。 以下說明係為本發明之具體實施方式。 *路二參^圖五”靖圖五⑼广圖五^換圖五^⑴係為 本發月之弟一實施例之像素陣列上視圖,而本發明之第 一實施例的設計即是根據上述之方式(1)。如圖五以)所 不,——像素陣列50至少包含有一掃描線5 2電連接至一掃 描線驅動電路54、以及資料線56a〜56c電連接至一資料線 驅動電路(未顯示)。另外,像素陣列5〇另包含有像素A.、 B與C,而像素A、内分別包含有薄膜電晶體τα、τ^τ 以及其相對應之液晶單元(未顯示)。其中,薄膜電晶體 TA、T與汲極62a、6 2b與62c分別與資料線56a、56b與 56c相連接,源極64a、64b與64c則分別與液晶單元之像 素電極5 8 a、5 8 b與5 8 c相連接,而閘極6 0 a、6 0 b與6 0 c則 分別與掃描線5 2相連接,並且各閘極與各源、汲極間還 分別設有半導體層66a、66b與66c。The relationship between 电 and (CGS) A- (CGS) B = (CGS) and (Clc) a = (c ^ is ^ FD) A, (Vfd) bW (Vfd) c. Therefore, Li / ^ Β 谷 Γϊ: 容 Σs ί ί The farther and farther the pixel is from the input of the scan line, the vF of each pixel will be approximately the same. It is worth mentioning that the above $ M, Htr -V '/ ο Λ «y., The method (1), the method (2) and the method can also be matched with each other to achieve the push Iv from M 1 3) ”Π% Q < ^ is the same purpose of VF fishing for each pixel. The following description is a specific implementation of the present invention. * 路 二 参 ^ 图 五" Jingtu five "Wider five" Change five " This is a top view of a pixel array according to an embodiment of the present invention, and the design of the first embodiment of the present invention is based on the above manner (1). As shown in FIG. 5), the pixel array 50 includes at least one scanning line 52 electrically connected to a scanning line driving circuit 54 and data lines 56a to 56c electrically connected to a data line driving circuit (not shown). In addition, the pixel array 50 further includes pixels A., B, and C, and the pixels A, respectively, include thin-film transistors τα, τ ^ τ, and corresponding liquid crystal cells (not shown). Among them, the thin film transistors TA, T and the drain electrodes 62a, 62b, and 62c are respectively connected to the data lines 56a, 56b, and 56c, and the source electrodes 64a, 64b, and 64c are respectively connected to the pixel electrodes 5 8 a, 5 8 of the liquid crystal cell. b is connected to 5 8 c, and gates 60 a, 60 b, and 60 c are connected to scan line 52 respectively, and a semiconductor layer 66a is provided between each gate and each source and drain , 66b and 66c.
第15頁 200403509Page 15 200403509
另包含有重疊區域68a、68b與68c,其 t ί 68祕為間極6〇a與源極64&重疊的部份,而重 ^ ^ ^ 與68(3則分別為閘極6〇b、60c與源極64b及64c 勺=2 2。除此之外,像素電極58a、581)與58c還分別 a $部伤69&、69b與69c,並且延伸部份69a、69b 與69c均與掃描線52部份重疊,而形成重疊區域7〇a、7〇b ,、^〇c,需注意的是,重疊區域7〇a、7〇1)與7〇 呈遞增變化。It also contains overlapping areas 68a, 68b, and 68c, where t ί 68 is the overlapping part of the intermediate electrode 60a and the source 64 &, and the heavy ^^^ and 68 (3 are the gate electrode 60b, 60c and source 64b and 64c scoop = 2 2. In addition, the pixel electrodes 58a, 581) and 58c are also a part of the wound 69 & 69b and 69c, and the extensions 69a, 69b and 69c are scanned with The lines 52 are partially overlapped, and the overlapping areas 70a, 70b, and ^ c are formed. It should be noted that the overlapping areas 70a, 701) and 70 gradually change.
在本實施例中,重疊區域68a、68b與68c係分別對應 於圖四所示之寄生電容GSA、GS與GSc,並且重疊區域 6 8 a、6 8 b與6 8 c的面積約略相等,因此使得(c gs) a= ( c gs) b= (CGS)c。再者,重疊區域70心7〇]:)與7〇(:係分別對應於圖匹 所示之補償電容c,A、c,與c,c,由於重疊區域70a、7〇b病 s ’各像素電極與掃描線之間具有足夠的空間來設置重 疊區域70a、7Ob與70c,以使各像素的Vf約略相同。 7 0c的面積係逐漸增加,因此補償電容c,a、c,與c,約電 容值CA、C與C係呈遞增變化(亦即cA〈CB<Cc),因而可使像 素A、B與C的V F約略相同。並且,由於各像素電極與掃描 線之間的空間寬大,因此針對大尺寸的液晶顯示面板而In this embodiment, the overlapping regions 68a, 68b, and 68c correspond to the parasitic capacitances GSA, GS, and GSc shown in FIG. 4 respectively, and the areas of the overlapping regions 6 8 a, 6 8 b, and 6 8 c are approximately equal, so Let (c gs) a = (c gs) b = (CGS) c. Furthermore, the overlapping areas 70 and 70] :) and 70 (: respectively correspond to the compensation capacitors c, A, c, and c, c shown in the figure, because the overlapping areas 70a, 70b are diseased s' There is enough space between each pixel electrode and the scanning line to set the overlapping areas 70a, 7Ob, and 70c so that the Vf of each pixel is approximately the same. The area of 70c is gradually increased, so the compensation capacitances c, a, c, and c The approximate capacitance values CA, C, and C are increasing (that is, cA <CB < Cc), so that the VF of the pixels A, B, and C can be approximately the same. Moreover, due to the space between each pixel electrode and the scanning line Wide, so for large-size LCD panels
此外,本發明之第一實施例之實施方式並不限於圖 五(A )所示’圖五(B )所示即為本發明之第一實施例的另In addition, the implementation manner of the first embodiment of the present invention is not limited to that shown in FIG. 5 (A), and that FIG. 5 (B) is another example of the first embodiment of the present invention.
200403509 五、發明說明(10) 一種實施方式。如圖五(B )所示,在像素陣列5 0中,掃描 , 線5 2上包含有延伸部份7 1 a、7 1 b與7 1 c,而延伸部份 7 1 a、7 1 b與7 1 c係分別位於像素電極5 8 a、5 8 b與5 8 c的下 側,並分別與像素電極5 8 a、5 8 b與58 c重疊而形成重疊區 域72a、72b與72c,且重疊區域72a、72b與72c的面積係 逐漸增加。另外,在廣視角液晶顯示器的應用中,例如 垂直配向(vertical al ignment)液晶,常設置有規制手 段(regulating means),例如突起結構(protrusion), 用以規範液晶的配向,以增進廣視角的效果。因此,當 應用於上述顯示器時,像素電極58a、58b與58c的上側另 可分別設置有突起結構(protrusion) 73a、7 3b與73c,而 , 由於犬起結構7 3 a〜7 3 c係用來避免掃描線5 2的延伸部份 7 1 a〜7 1 c的電場干擾液晶分子的排列方向,因此突起結構 7 3 a、7 3 b與7 3 c係分別遮蓋部份的延伸部份7 1 a、7 1 b與 71c。在本發明之其他實施例中,突起結構73a〜73地可 以設置在一共通電極(未顯示)上,該共通電極係設於一 上基板上,而該上基板係與設有像素陣列5 〇的下基板平 行相對。一般而言,突起結構73a〜73c係由光阻材料所構 成0 重疊區域68a、68b與6 8c係分別對應於圖四所示之電 谷68^68與68(:’而重疊區域72&、7213與72<:則分別對應 於圖四所示之補償電容C,A、C,與C,c。如圖五(B)所示, 重4: £域72a、72b與72c的面積係逐漸增加,因此補償電200403509 V. Description of the invention (10) An embodiment. As shown in FIG. 5 (B), in the pixel array 50, scanning, the line 5 2 includes extensions 7 1 a, 7 1 b, and 7 1 c, and the extensions 7 1 a, 7 1 b And 7 1 c are located below the pixel electrodes 5 8 a, 5 8 b, and 5 8 c, respectively, and overlap with the pixel electrodes 5 8 a, 5 8 b, and 58 c to form overlapping regions 72a, 72b, and 72c, The areas of the overlapping regions 72a, 72b, and 72c gradually increase. In addition, in the application of wide-viewing-angle liquid crystal displays, for example, vertical alignment liquid crystals, regulatory means, such as protrusions, are often provided to regulate the alignment of the liquid crystals to improve the wide-viewing angle. effect. Therefore, when applied to the above display, the pixel electrodes 58a, 58b, and 58c may further be provided with protrusions 73a, 7 3b, and 73c on the upper side, respectively, and because of the dog-like structure 7 3 a to 7 3 c In order to avoid the electric field of the extended portion 7 1 a ~ 7 1 c of the scanning line 5 2 from interfering with the alignment direction of the liquid crystal molecules, the protruding structures 7 3 a, 7 3 b, and 7 3 c respectively cover the extended portion 7 1 a, 7 1 b and 71c. In other embodiments of the present invention, the protruding structures 73a to 73 may be disposed on a common electrode (not shown), the common electrode is provided on an upper substrate, and the upper substrate is provided with a pixel array 50. The lower substrates face each other in parallel. Generally speaking, the protruding structures 73a to 73c are made of a photoresist material. The overlapping regions 68a, 68b, and 68c respectively correspond to the electric valleys 68 ^ 68 and 68 (: 'and overlapping regions 72 &, 7213 and 72 <: respectively correspond to the compensation capacitors C, A, C, and C, c shown in Figure 4. As shown in Figure 5 (B), weight 4: The areas of the domains 72a, 72b, and 72c gradually increase. Increase, so compensating electricity
200403509 五、發明説明(η) 容c,A、C’與C’钓電容值CA、c與C犀遞增變化(亦即CA<C <Cc),所以可使像素A、B與C的VF灼略相同。 請參考圖六,圖六係為本發明之第二實施例之像素 陣列上視圖,而本發明之第二實施例係結合上述之方式 (1 )與方式(2 )。如圖六所示,像素陣列5 0係包含有區域I 與區域I I,其中像素A、B與C係位於區域I,而薄膜電晶 體T A、T與T約閘極6 0 a、6 0 b與6 0 c分別包含有區塊6 7 a、 67b與67c,並且區塊67a、67b與67c位於重疊區域68a、 68b與68c内,且區塊67a、67b與67c的面積係呈遞增變 化,而使重疊區域68a、68b舆68c的面積逐漸增加。 在本發明之第二實施例中,重疊區域68a、68b與68c ,對應於圖四所示之電容Gs a、GS與GSC°如圖六所示,重 璺區域6 8 a、6 8 b與6 8 c的面積呈遞增變化,因此電容GS Αν GS與GS約電容值關係為(Cgs)a<Cgs)b〈(Cgs)c,所以可使像素 A、B與C的V F約略相同。也就是說,區域丨内的像素是藉 由調整閘極與源極間之寄生電容CGS,以使區域I内各像素 的V F約略相同。 敉夂^ Ϊ ’由於受限於閘極與源極的尺寸關係,藉由調 ^的兩^的寄生電容GS,並無法因應大尺寸液晶顯示面 50另1 1。因此,在本發明之第二實施例中,像素陣列 a有區域1 I ’而位於區域I I的像素(未顯示)則是200403509 V. Description of the invention (η) The capacitances c, A, C 'and C' are changed in increments of CA, c, and C (ie, CA < C < Cc), so that the pixels A, B, and C can be changed. VF is slightly the same. Please refer to FIG. 6. FIG. 6 is a top view of a pixel array according to a second embodiment of the present invention, and the second embodiment of the present invention combines the above-mentioned manner (1) and manner (2). As shown in FIG. 6, the pixel array 50 includes area I and area II, in which pixels A, B, and C are located in area I, and the thin-film transistors TA, T, and T are about gates 60a, 60b. And 6 0 c contain blocks 6 7 a, 67b, and 67c, respectively, and blocks 67a, 67b, and 67c are located in overlapping areas 68a, 68b, and 68c, and the areas of blocks 67a, 67b, and 67c are increasing. The area of the overlapping regions 68a, 68b and 68c gradually increases. In the second embodiment of the present invention, the overlapping regions 68a, 68b, and 68c correspond to the capacitors Gs a, GS, and GSC shown in FIG. 4 as shown in FIG. 6, and the heavy regions 6 8a, 6 8 b, and The area of 6 8 c changes gradually. Therefore, the relationship between the capacitance value of the capacitors GS Αν GS and GS is (Cgs) a < Cgs) b <(Cgs) c, so the VF of the pixels A, B, and C can be approximately the same. In other words, the pixels in the area I are adjusted to make the V F of each pixel in the area I approximately the same by adjusting the parasitic capacitance CGS between the gate and the source.敉 夂 ^ Ϊ ′ Due to the limitation of the size relationship between the gate and the source, by adjusting the parasitic capacitance GS of ^^, it is not possible to cope with the large-size liquid crystal display surface 50 and 11 1. Therefore, in the second embodiment of the present invention, the pixel array a has a region 1 I ′ and the pixels (not shown) located in the region I I are
200403509200403509
藉由調整各像素的補償電容C’,以使位於區域丨丨的各像 素的vF約略相同,且位於區域11的像素結構可參考第一 實施例,因此不再贅述。 請參考圖七,圖七係為本發明之第三實施例之像素 陣列上視圖,而本發明之第三實施例係結合上述之方式 (1)與方式(3)。如圖七所示,像素A、B與C包含有重疊區 域7 0 a、7 0 b與7 0 c,像素電極5 8 a、5 8 b與5 8 c分別包含有 延伸部份6 9 a、6 9 b與69c’重疊區域70 a即為延伸部份6 9 a 與知描線5 2重豐的部份’而重豐區域b與7 0 c則分別為 掃描線5 2與延伸部份6 9 b及6 9 c重疊的部份,並且重疊^ 域7 0 a、7 0 b與7 0 c的面積係逐漸增加。此外,像素a、β與 C另包含有重疊區域74a、74b與74c,而重疊區域74a、 ' 7 4 b與7 4 c係分別為像素電極5 8 a、5 8 b與5 8 c與掃描線5 2 a 重疊的部份,並且重疊區域7 4 a的面積大於重疊區域 74b,而重疊區域74b的面積大於重疊區域74c。 在本發明之第三實施例中,重疊區域74a、74b與74c 係對應於圖四所示之儲存電容SC A、SC與SC c,而重疊區域 7 0 a、7 0 b與7 0 c則分別對應於圖四所示之補償電容c,a、 C’與C’c。如圖七所示,重疊區域70a、70b與70c的面積 呈遞增變化,因此補償電容C,A、C,與(:,妁電容值關係為 CA<CB<Cc’而重疊區域74a、7 4 b與7 4 c的面積係逐漸減少, 因此儲存電容SCA、SC與SC妁電容值關係為(Csc) A>(csc)B>The compensation capacitance C 'of each pixel is adjusted so that the vF of each pixel in the region 丨 丨 is approximately the same, and the pixel structure in the region 11 can refer to the first embodiment, so it will not be described again. Please refer to FIG. 7, which is a top view of a pixel array according to a third embodiment of the present invention, and the third embodiment of the present invention is a combination of the above-mentioned manner (1) and manner (3). As shown in FIG. 7, the pixels A, B, and C include overlapping areas 7 0 a, 7 0 b, and 7 0 c, and the pixel electrodes 5 8 a, 5 8 b, and 5 8 c include extensions 6 9 a, respectively. , 6 9 b and 69c 'the overlapping area 70 a is the extended part 6 9 a and the tracing line 5 2 heavy abundance' and the heavy abundance b and 7 0 c are the scanning line 5 2 and the extended part, respectively. The overlapping parts of 6 9 b and 6 9 c, and the areas of the overlapping ^ fields 7 0 a, 7 0 b, and 7 0 c gradually increase. In addition, the pixels a, β, and C also include overlapping areas 74a, 74b, and 74c, and the overlapping areas 74a, '7 4 b, and 7 4 c are the pixel electrodes 5 8 a, 5 8 b, and 5 8 c, respectively. The portion where the line 5 2 a overlaps, and the area of the overlapping area 7 4 a is larger than the area of the overlapping area 74 b, and the area of the overlapping area 74 b is larger than the area of the overlapping area 74 c. In the third embodiment of the present invention, the overlapping regions 74a, 74b, and 74c correspond to the storage capacitors SC A, SC, and SC c shown in FIG. 4, and the overlapping regions 7 0a, 7 0b, and 7 0c are Corresponding to the compensation capacitors c, a, C 'and C'c shown in Figure 4. As shown in Figure 7, the areas of the overlapping areas 70a, 70b, and 70c are increasing, so the compensation capacitors C, A, C, and (:, 妁) have a relationship of CA < CB < Cc 'and the overlapping areas 74a, 7 4 The areas of b and 7 4 c are gradually decreasing, so the storage capacitors SCA, SC and SC 妁 have a relationship of (Csc) A > (csc) B >
第19頁 200403509 五、發明說明(13) (Csc)c,所以可使像素A、像素B與像素⑼v一略相同 此二卜,儲存電容係用來減少 壓的影響,並協助液晶單元健存電荷,儲“ 對協助液晶單_存電荷的能力越低 的。Page 19, 200303509 V. Description of the invention (13) (Csc) c, so that pixel A, pixel B and pixel ⑼v can be slightly the same. The storage capacitor is used to reduce the impact of voltage and assist the liquid crystal cell to survive. The lower the charge-storage ability to assist the liquid crystal, the lower the capacity.
FD 略相同,因此本發明之第三實施例不僅m二1 荷的能力。 免降低儲存電耗助液晶單元儲存電 需注意的是,本發明之裳 ^嗌一电士丨、/ 於同一條掃描線上的I彳^ ί 一 f第二實施例係針對位 陣如列,視圖,而本… 含有複數你式()。圖八所示,一像素陣列8〇包 84、資料Ϊ ^ ή線82_ 8几電連接至一掃描線驅動電路 Γ像ΐ /、RH嶋電連接至-資料線驅動電路88、以 dB,C,而像素A、B,與C,的位置分別對應於 3薄Ϊί Ϊ1、B’與C,。其中像素A、B,與C,内分別包含 示/)。並且阳觸體ΤΑ、Τβ與Tc’以及其相對應之液晶單元(未顯 分別盥資姻薄括膜電晶體Τα、Τβ,與Tc,之没極94a、941)與94c 曰單^之ΪΪ 863相連接’源極96a、961)與9^分別與液 曰曰 素電極90a、9〇b與9〇β目連接,而閘極92a、 11FD is slightly the same, so the third embodiment of the present invention is not only capable of m 2 1 load. It is necessary to note that the storage power consumption of the liquid crystal cell can be reduced without reducing the storage power consumption. The second embodiment of the present invention is directed to a bit array, such as an electrician on the same scanning line. The view, and this ... contains plural you (). As shown in FIG. 8, a pixel array 80 package 84, a data line 82_8 are electrically connected to a scanning line driving circuit Γ image, /, RH are electrically connected to a data line driving circuit 88, in dB, C , And the positions of the pixels A, B, and C ′ correspond to 3 thin lines Ϊί Ϊ1, B ′, and C ′, respectively. Among them, the pixels A, B, and C respectively contain (/). And the cathodic bodies TA, TA and Tc 'and their corresponding liquid crystal cells (not shown separately thin film transistors TA, Tβ, and Tc, the poles 94a, 941) and 94c are single ^ ^ 863 connected 'source electrodes 96a, 961) and 9 ^ are respectively connected to the liquid electrode 90a, 90b and 90β mesh, and the gates 92a, 11
200403509 五、發明說明(14) 9 2 b與9 2 c則分別與各掃描線8 2 a相連接,另外,各閘極與 各源、汲極間還分別設有半導體層98a、98破g8c。 另一方面,像素電極90a、9〇1)與9〇#包含有延伸部 ^ 9 9 a、9 9 b與9 9 c,並且延伸部份9 9 a、9 9 b與9 9 c均與各 掃描線82a部份重疊,而形成面積逐漸增加的重疊區域 1 〇 〇 a、1 〇 〇 b與1 0 0 c。此外,像素電極9 〇 a、9 〇 b與9 〇 c分別 與各掃描線82b重疊於重疊區域1〇2a、1〇21)與1〇2c,而形 成像素A、B’與C’之儲存電容。 在本發明之第四實施例中,重疊區域丨〇 〇 a、1 〇 〇 b與 分別?應於補償電容c,A、c,與C,c(未顯示小由、於 區域重璺區域1 Q 〇 a、1 Q Q b與1 Q 〇⑽面積呈遞增變 ,二,使相對應的補償電容C,A、C,與C,钓電容的關係為 <Cc’,進而可使像素A、B,與C,的V妁 v (VFD)B^ (VFD)c^〇 FD; 此外’在本發明之第四實施例中,各重疊區域 1 〇 〇 a 1 〇 〇 b與1 〇 〇 c的形成亦可利用各掃描線8 2 3延伸至各 像素電極90a、9 Ob與90c之下侧,以達到本實施例之目 的。 ^ _相較於習知技術,本發明係於各像素内加入一補償 電容,而各該補償電容係由各該像素電極與各該像素電200403509 V. Description of the invention (14) 9 2 b and 9 2 c are connected to each scanning line 8 2 a. In addition, semiconductor layers 98a and 98g8c are respectively provided between each gate and each source and drain. . On the other hand, the pixel electrodes 90a, 901) and 9〇 # include extensions ^ 9 9 a, 9 9 b, and 9 9 c, and the extensions 9 9 a, 9 9 b, and 9 9 c are all Each scan line 82a partially overlaps, and overlap areas 100a, 100b, and 100c, which gradually increase in area, are formed. In addition, the pixel electrodes 90a, 90b, and 90c overlap with the respective scanning lines 82b in the overlapping areas 10a, 102, and 102c, respectively, to form the storage of pixels A, B ', and C'. capacitance. In the fourth embodiment of the present invention, the overlapping areas 丨 00a, 100b and? Should be respectively compensated for the compensation capacitors c, A, c, and C, c (not shown, and the area overlaps the area 1). The areas of Q 〇a, 1 QQ b and 1 Q 〇⑽ are increasing. Second, the corresponding compensation capacitors C, A, C, and C, and the relationship between the fishing capacitors are < Cc ', so that the pixels A, B 妁 and C , V 妁 v (VFD) B ^ (VFD) c ^ 〇FD; In addition, in the fourth embodiment of the present invention, each of the overlapping regions 100a, 100b, and 100c The formation can also be achieved by extending each scanning line 8 2 3 to the lower side of each pixel electrode 90a, 9 Ob, and 90c to achieve the purpose of this embodiment. ^ _ Compared with the conventional technology, the present invention is within each pixel. A compensation capacitor is added, and each of the compensation capacitors is electrically connected to each pixel electrode and each pixel.
200403509 五、發明說明(15) 極所對應之掃描線所重疊的重疊區域所組成,並藉由調 整各該補償電容的電容值,以達到使各該像素之V F趵略 相同之目的,並減少液晶顯示面板之閃爍效應,進而提 升液晶顯不面板之顯不品質。 以上所述僅為本發明之較佳實施例,凡依本發明申 請專利範圍所做之均等變化與修飾,皆應屬本發明專利 之涵蓋範圍。200403509 V. Description of the invention (15) The overlapping area of the scanning line corresponding to the (15) electrode is composed, and the capacitance value of each compensation capacitor is adjusted to achieve the same VF of each pixel and reduce The flicker effect of the liquid crystal display panel further improves the display quality of the liquid crystal display panel. The above description is only a preferred embodiment of the present invention, and any equivalent changes and modifications made in accordance with the scope of the patent application of the present invention shall fall within the scope of the patent of the present invention.
第22頁 200403509 圖式簡單說明 圖式之簡單說明 圖一為習知一薄膜電晶體液晶顯示面板的示意圖。 圖二則為一薄膜電晶體液晶顯示面板之單一像素的 等效電路示意圖。 圖三係為各該驅動積體電路晶片的輸出電壓之波形 示意圖。 圖四係為本發明之液晶顯示面板之等效電路圖。 圖五(A)與圖五(B)係為本發明之第一實施例之像素 陣列上視圖。 圖六係為本發明之第二實施例之像素陣列上視圖。 圖七係為本發明之第三實施例之像素陣列上視圖。 圖八係為本發明之第四實施例之像素陣列上視圖。 圖式之符號說明 10 TFT-LCD 12 下基板 1 4 像素陣列區 1 6 掃描線驅動電路區 16a、16b、16c 驅動積體電路晶片 17 匯流線 18 資料線驅動電路區 2 0 像素 4 0 等效電路 50、80 像素陣列 52、52a、82a、82b 掃描線 54、84 掃描線驅動電路Page 22 200403509 Brief description of the drawings Brief description of the drawings Figure 1 is a schematic diagram of a conventional thin film transistor liquid crystal display panel. Figure 2 is a schematic diagram of an equivalent circuit of a single pixel of a thin film transistor liquid crystal display panel. FIG. 3 is a waveform diagram of the output voltage of each driving integrated circuit chip. FIG. 4 is an equivalent circuit diagram of the liquid crystal display panel of the present invention. 5 (A) and 5 (B) are top views of a pixel array according to the first embodiment of the present invention. FIG. 6 is a top view of a pixel array according to a second embodiment of the present invention. FIG. 7 is a top view of a pixel array according to a third embodiment of the present invention. FIG. 8 is a top view of a pixel array according to a fourth embodiment of the present invention. Explanation of Symbols 10 TFT-LCD 12 Lower substrate 1 4 Pixel array area 1 6 Scan line drive circuit area 16a, 16b, 16c Drive integrated circuit chip 17 Bus line 18 Data line drive circuit area 2 0 Pixel 4 0 Equivalent Circuit 50, 80 Pixel array 52, 52a, 82a, 82b Scan line 54, 84 Scan line drive circuit
第23頁 200403509 圖式簡單說明 5 6a、 56b、 5 6c、 8 6a、 8 6b 資料線 58a、 58b、 58c、 9 0a、 9 Ob、9 0 c 像素電極 6 0a、 60b、 6 0c、 92a、 92b、 92c 閘極 62a、 62b、 62c' 9 4a、 94b、94c 及極 64a、 64b、 64c" 9 6a、 9 6b、9 6 c 源極 6 6a、 66b、 6 6c- 98a、 98b、 98c 半導體層 67a、 67b、 67c 區塊 6 8a、 68b、 68c、 70a、 70b、 70c、 72a、 72b、 72c、 74a、 74b、 74c、 100a 、100b、 100c、 102a、 102b、 102c 重疊 區域 6 9a、 69b、 6 9c、 71a' 7 1 b、7 1 c、 99a、 99b、 99c 延伸部分 88 資料線驅動電路Page 23 200303509 Brief description of the diagram 5 6a, 56b, 5 6c, 8 6a, 8 6b Data lines 58a, 58b, 58c, 9 0a, 9 Ob, 9 0 c Pixel electrodes 6 0a, 60b, 6 0c, 92a, 92b, 92c Gates 62a, 62b, 62c '9 4a, 94b, 94c and poles 64a, 64b, 64c " 9 6a, 9 6b, 9 6 c Source 6 6a, 66b, 6 6c- 98a, 98b, 98c Semiconductor Layer 67a, 67b, 67c Block 6 8a, 68b, 68c, 70a, 70b, 70c, 72a, 72b, 72c, 74a, 74b, 74c, 100a, 100b, 100c, 102a, 102b, 102c Overlap area 6 9a, 69b , 6 9c, 71a '7 1 b, 7 1 c, 99a, 99b, 99c extension 88 data line driving circuit
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CN100414368C (en) * | 2006-09-12 | 2008-08-27 | 友达光电股份有限公司 | Liquid crystal display device and its driving method |
TWI341430B (en) | 2006-12-01 | 2011-05-01 | Chimei Innolux Corp | Liquid crystal panel |
TWI375198B (en) * | 2007-05-17 | 2012-10-21 | Tpo Displays Corp | A system for displaying images |
CN100580536C (en) * | 2007-07-06 | 2010-01-13 | 昆山龙腾光电有限公司 | Array base plate for liquid-crystal display device and its production |
TWI409556B (en) | 2008-01-09 | 2013-09-21 | Chunghwa Picture Tubes Ltd | Pixel structure and active device array substrate |
JP5299063B2 (en) * | 2009-04-24 | 2013-09-25 | 株式会社ジャパンディスプレイ | Liquid crystal display |
TWI393974B (en) * | 2009-06-25 | 2013-04-21 | Chunghwa Picture Tubes Ltd | Liquid crystal display panel |
CN102053410B (en) * | 2009-10-30 | 2012-11-21 | 群康科技(深圳)有限公司 | Touch display panel, touch display device and flat display panel |
TWI461807B (en) * | 2010-07-08 | 2014-11-21 | Hannstar Display Corp | Pixel structure of in-cell touch display panel and method of forming the same |
CN102879967B (en) * | 2012-10-22 | 2015-02-04 | 深圳市华星光电技术有限公司 | Driving circuit of liquid crystal panel |
US9025102B2 (en) | 2012-10-22 | 2015-05-05 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Drive circuit of liquid crystal panel |
CN103995387B (en) | 2014-05-16 | 2015-05-13 | 京东方科技集团股份有限公司 | Array substrate and display device |
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JP2002072250A (en) * | 2000-04-24 | 2002-03-12 | Matsushita Electric Ind Co Ltd | Display device and driving method thereof |
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KR20020042898A (en) * | 2000-12-01 | 2002-06-08 | 구본준, 론 위라하디락사 | Liquid crystal display device and method of manufacturing thereof |
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