TW200403463A - Light amplifying device and method of manufacturing the device, light source device using the light amplifying device, light treatment device using the light source device, and exposure device using the light source device - Google Patents

Light amplifying device and method of manufacturing the device, light source device using the light amplifying device, light treatment device using the light source device, and exposure device using the light source device Download PDF

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Publication number
TW200403463A
TW200403463A TW92105428A TW92105428A TW200403463A TW 200403463 A TW200403463 A TW 200403463A TW 92105428 A TW92105428 A TW 92105428A TW 92105428 A TW92105428 A TW 92105428A TW 200403463 A TW200403463 A TW 200403463A
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Taiwan
Prior art keywords
light
optical
light source
waveguide
excitation light
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TW92105428A
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Chinese (zh)
Inventor
Doi Masaaki
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Nippon Kogaku Kk
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Priority claimed from JP2002077744A external-priority patent/JP2003283012A/en
Priority claimed from JP2002138861A external-priority patent/JP2003332653A/en
Priority claimed from JP2002142247A external-priority patent/JP2003332654A/en
Priority claimed from JP2003053891A external-priority patent/JP2003338646A/en
Application filed by Nippon Kogaku Kk filed Critical Nippon Kogaku Kk
Publication of TW200403463A publication Critical patent/TW200403463A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067Fibre lasers
    • H01S3/06708Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122Basic optical elements, e.g. light-guiding paths
    • G02B6/1228Tapered waveguides, e.g. integrated spot-size transformers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06Construction or shape of active medium
    • H01S3/063Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133Functions
    • G02B2006/12147Coupler
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133Functions
    • G02B2006/1215Splitter
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166Manufacturing methods
    • G02B2006/12176Etching
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166Manufacturing methods
    • G02B2006/12183Ion-exchange
    • G02B2006/12185Ion-exchange field-assisted ion-exchange

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Lasers (AREA)
  • Optical Integrated Circuits (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Light Guides In General And Applications Therefor (AREA)

Abstract

A light amplifying device (1) comprises a light amplifying wave-guide path (3) extending with a specified cross sectional shape provided in a glass substrate (2). The light amplifying wave-guide path (3) further comprises a first wave-guide path (3a) extending from an inlet part (4a) to a first intermediate part (A) with a specified cross sectional shape and a second wave-guide path (3b) having a cross sectional shape divergently extending from the first intermediate part (A) to an outlet part (4b).

Description

200403463 玫、發明說明: [發明所屬之技術領域] 本發明係關於用來放大來自雷射 光放大裝置及”造方法。又,^ (九寺肊射光纪 大狀署十丄本發明係關於使用該光场 大衣置之光源襄置、使用該光源袭置之光治療裝置上 使用光源裴置之曝光裝置。 ‘ [先前技術] _200403463 Description of the invention: [Technical field to which the invention belongs] The present invention relates to an amplification device and a manufacturing method for amplifying light from a laser. Also, ^ (Nine Temples, Department of Radiation and Light Department, Department of Economic Affairs, Ten Departments, the present invention relates to using The light field coat is placed with a light source, and the light treatment device using the light source is placed on a light treatment device using a light source Pei Zhi exposure device. '[Prior Art] _

作為將從半導體雷射等雷射光源所產生之單—波長之 、’工外光或可見光加以放大之裝置,有光纖放大器、光導波 路放大器。這是將激發光供應至添加了斜⑹等稀土類元 素之放大用光纖、放大用光導波路,激發所添加之稀土類 兀素,藉此針對稀土類元素之覆蓋電子之能階,形成反轉 刀布,來放大射入上述光纖或光導波路之光者。 當使用此構成之光纖放大器、光導波路放大器使其產 生最高功率時,將會因放大用光纖、或放大用導波路所產As a device for amplifying single-wavelength, external light or visible light generated from a laser light source such as a semiconductor laser, there are a fiber amplifier and an optical waveguide amplifier. This is to supply the excitation light to the optical fiber for amplification and the optical waveguide for adding the rare earth elements such as oblique ytterbium to excite the added rare earth element, thereby inverting the energy level of the electrons covered by the rare earth element and forming a reverse Knife cloth to amplify the light entering the optical fiber or optical waveguide. When using the optical fiber amplifier and optical waveguide amplifier of this structure to produce the highest power, it will be produced by the optical fiber for amplification or the waveguide for amplification.

生之受激拉曼散射(Stimulated Raman Scattering : SRS) ’四光波混合(Four-Wave Mixing : FWM)等非線性光學效應 而產生雜訊光。這樣一來,所產生之雜訊光與放大對象之 訊號光(雷射光)同時被放大,故放大器之放大功率也被使 用在雜訊光之放大用,不能將放大器之放大能力有效使用 在放大對象之訊5虎光之放大’而產生放大效率降低之問題 。同時,也產生自我相位調變(Self PhaseStimulated Raman Scattering (SRS) ’Four-Wave Mixing (FWM) and other non-linear optical effects generate noise light. In this way, the generated noise light and the signal light (laser light) of the amplification object are amplified at the same time, so the amplification power of the amplifier is also used for the amplification of the noise light, and the amplification ability of the amplifier cannot be effectively used for amplification. The news of the subject 5 The magnification of the tiger's light causes the problem of reduced magnification efficiency. At the same time, self-phase modulation is also generated.

Modulation:SPM)之非線性效應,也產生訊號光之頻譜擴大 之問題。 200403463 人’一般而言,在光纖放大器、光導波路放大器中, 用來進行光放大之光纖内徑(核心内徑)及導波路之尺寸, 係設定成保持單模,在1條放大用光纖或放大用導波路中 不產生上述雜说光而能放大之最南功率受到限制,在兮 光放大中有其限度。 * 又,當藉由光纖放大器、光導波路放大器來進行光之 放大時,供應至該等放大器之激發光並非完全使用在添加 稀土類元素之激發,其一部份仍會直接穿透光纖或光導波 路,無助於光放大。因此,無法有效利用激發光,而有光 放大效率不佳之問題。 另一方面,上述構成之光纖放大器、光導波路放大哭 係與雷射光源組合,來作為各種光學相關裝置之光源。^ 如,能在進行近才見、散光等治療之光(雷射光)治療裝置等 上作為供應既定照射光之光源裝置,或在晶圓上,作<為使 用光微影技術之半導體製造用曝光裝置之光源裝 實用化。 白 7一此種光治療裝置或半導體曝光裝置等巾,往往要求赶 仃照射光之供應控制(切換控制)’進行供應端之切換控带 例如’雖未公開’但在曰本特願讀_〇36256號中,達 接光源裝置之射出端側設置 些要求。但是,這樣一來i t 來因應這 木,必須另外設置切換元 器,導致產生裝置構造複雜化、製造成本上升之問題;Modulation: SPM) also causes the problem of signal spectrum expansion. 200403463 In general, in fiber amplifiers and optical waveguide amplifiers, the inner diameter (core diameter) of the optical fiber used for optical amplification and the size of the waveguide are set to maintain a single mode. The southernmost power that can be amplified without generating the above-mentioned stray light in the waveguide for amplification is limited, and there is a limit in the optical amplification. * In addition, when using optical fiber amplifiers and optical waveguide amplifiers to amplify light, the excitation light supplied to these amplifiers is not completely used for the excitation of adding rare earth elements, and some of them will still directly penetrate the optical fiber or light guide. Wave path does not help light amplification. Therefore, the excitation light cannot be effectively used, and there is a problem of poor light amplification efficiency. On the other hand, the optical fiber amplifier, optical waveguide amplifier, and laser light source combined as described above are used as light sources for various optical related devices. ^ For example, it can be used as a light source device for supplying a predetermined irradiation light on a light (laser light) treatment device that performs recent vision and astigmatism treatment, or on a wafer, for semiconductor manufacturing using photolithography technology Practical use of the light source device of the exposure device. White 7—Towels such as phototherapy devices or semiconductor exposure devices often require the supply control (switching control) of the irradiated light to be switched on the supply side. In No. 36256, some requirements are set for the output side of the light source device. However, in this way, in order to respond to this problem, it is necessary to separately install a switching element, which causes problems such as a complicated device structure and an increased manufacturing cost;

[發明内容] W[Inventive Content] W

本發明之第1目的係裎/i£ ^ R 係如仏一種即使在產生最高功率之 200403463 光才也此彳工制文激杈曼散射、四光波混合等所造成之雜 訊光之產生,式白共 a目我相位調變之產生的光放大裝置及其製 造方法。 本么月之另目的係提供一種能控制受激拉曼散射、 =光波混合等所造成之雜訊光之產生,或控制自我相位調 ’交之產=,而得到高功率之放大光之構成的光放大裝置。 本毛月之另目的係提供-種能有效利用構成光放大 器之放大用光纖或来访 大導波路内所提供之激發光,而進 行效率佳之光放大的光放大裝置。 'x月之另目的係提供一種將光切換功能作成一體 之構成的光放大裝置。 種使用上述光放大裝置來構g 用上述光源裝置所構成以 係在基板上設置具有既定 本發明之目的係提供 的光源裝置。 本發明之目的係提供一種 曝光裝置、及光治療裝置。 本發明之第1光放大裳置 ^ ^ 之截面形狀而延伸之井 ’八一"人且开另阢/ 大導波路來構成,該先放大導, 路係形成為具有從尤狡大導d 延伸,從帛… 間部以一定之截面形法 狀。 出邛呈擴大成錐形延伸之截面开 右使用每種構成之光放大裝置的話 内,當使照射光放先放大¥波路 朝向出口部之部份,:广先放大導波路之第1中間部 ”习戴面形狀呈擴大成錐形,掇p % ίΜ ^ FWd Diameter:MF / “感心 斬新擴大故在該擴大成錐形之部份 ’光密度緩慢降低,而& 4 ,^ &而月匕抑制受激拉曼散射、四光波、、e ^ 、自我相位調變之產生。 九波此合 戈,—述第1光放大裝置,光放大導波路,可採用 有從第1中間邱點A山 J知用具 开… 出口部至第2中間部為止為擴大成雜 开八伸之截面形狀’從第 接2 錐形的截面形壯; 口丨馬逑接擴大成 V狀而以一定截面形狀延伸的構成。 此時’最好是能將從光放大導波路之入 第 1中間部之部份設定在能保持單模之尺寸。卩、㈣弟 、、u另—方面’本發明光放大裝置之第1製造方法,係在 寬声:二類兀素之玻璃基板之表面,設置從-端部以既定 成二Ϊ:伸到中間部、且從中間部至另一端部呈擴大 、择死/見度的開口爽开彡#替 ^ 成膑,將刚述玻璃基板浸在熔融液 …價離子之中性鹽加熱到熔點以上而製成者)中既- 、才間一以在位於玻璃基板表面之膜之開口部份,形成導 、a之回折射率區域’再從玻璃基板除去膜,在玻璃基板 上施加電場將高折射區域埋人玻璃基板之内部製作而成。 本發明光放大裝置之第2製造方法,係在玻璃基板之 '面^ Μ 一端部到中間部,具有既定寬,直線狀延伸,並 攸中間部向另一端部,設置具有擴大成錐形寬度之開 :來形成膜,藉由離子注入法,將稀土類元素添加在形成· ^之玻璃基板之開口部份,將玻璃基板浸在熔融液(係將, 含有一價離子之中性鹽加熱到熔點以上而製成者)中既定 日守間,在位於玻璃基板表面之膜之開口部份,形成導波路 之向折射率區域,從玻璃基板除去膜,在玻璃基板上施加The first object of the present invention is to produce a kind of noise light, such as the scatman scattering, four-wave mixing, etc., even when the highest power of 200403463 light is generated. An optical amplifying device produced by the phase modulation of the white phase and the phase modulation and its manufacturing method. Another purpose of this month is to provide a structure that can control the generation of noisy light caused by stimulated Raman scattering, = mixing of light waves, etc., or control self-phase modulation, and obtain high-power amplified light. Light amplification device. Another purpose of this month is to provide an optical amplifying device which can efficiently utilize the optical fiber provided for amplification of the optical amplifier or visit the excitation light provided in the large waveguide to perform efficient optical amplification. Another purpose of the 'x month' is to provide an optical amplifying device having an integrated light switching function. A light source device constructed by using the light amplifying device described above is provided with a light source device provided on a substrate having a predetermined object of the present invention. An object of the present invention is to provide an exposure device and a phototherapy device. The first optical amplifier of the present invention is constructed by extending the cross-sectional shape of the clothes ^ ^, "Bayi", which is composed of a person and a large guide wave path. d Extending from 帛 ... to a certain cross-section method. The output is enlarged to a cone-shaped cross-section. When using each type of light amplification device, when the irradiation light is amplified, the part of the wave path toward the exit section is enlarged first: the first middle part of the guided wave path is enlarged first. "The shape of Xi Dainian was enlarged into a tapered shape, 掇 p% ίΜ ^ FWd Diameter: MF /" The heart is cut and expanded, so the light density gradually decreases in the enlarged tapered portion, and & 4, ^ & Moon Dagger suppresses the generation of stimulated Raman scattering, four light waves, e ^, and self-phase modulation. Nine waves are combined, the first optical amplifying device and the optical amplifying guided wave path can be opened from the first intermediate point A to the second intermediate section ... The exit section is extended to the second intermediate section to expand into a wide range of directions. The cross-sectional shape is from the 2nd conical cross-sectional shape; the mouth 丨 stirrup is enlarged into a V shape and extends in a certain cross-sectional shape. At this time, it is desirable that the portion from the optical amplification waveguide to the first middle portion is set to a size capable of maintaining a single mode.卩, ㈣ ,, u, and other aspects-The first manufacturing method of the optical amplifying device of the present invention is based on a wide-sounding: second-class glass substrate on the surface of the glass substrate, which is set from the -end portion to the predetermined two: The middle part, and the opening from the middle part to the other end is enlarged, and the death / visibility is opened. Shuangkai 彡 # 成 ^, immerse the glass substrate just described in the melt ... valence ion neutral salt is heated above the melting point And the producer) in the first and the second to form a refractive index region of the film on the opening portion of the film on the surface of the glass substrate, and then remove the film from the glass substrate, the application of an electric field on the glass substrate will be high The refraction area is made by burying the inside of the glass substrate. The second manufacturing method of the optical amplifying device of the present invention is to extend from the one end portion to the middle portion of the surface of the glass substrate and has a predetermined width and extend linearly, and the middle portion is extended to the other end portion to have a tapered width. Opening: to form a film, add a rare earth element to the opening portion of the glass substrate formed by ion implantation, and immerse the glass substrate in a molten liquid (system, which contains a monovalent ion neutral salt to heat It is made above the melting point) in the predetermined day Mori, at the opening portion of the film on the surface of the glass substrate, a refractive index region of the waveguide is formed, the film is removed from the glass substrate, and the glass substrate is applied.

2UU4034W 電場在區域埋入破璃基板之内部製作而成。 ㈣玻:;=方法中,較佳係根據膜開口寬之尺寸,可 5周即玻离基板各部份浸在炫融液之時間。 在本發明光放大裝置之 、生 氧燃燒器,在矽基板之# Α方法中、、係藉由氫 ,撖焯哭,六 表面堆積形成下部包覆層,藉由氫 氧九、、丈7〇。口,在下部包覆展 · 及麟等高折射率之核心^,:、積形成添加稀土類元素 ^ g,這樣一來,將形成下部包覆声 及核心層之矽基板加熱,使下邻勺… 匕後層 1定下α卩包覆層及核心層透明, 在核心層之表面,作 a山^ ^ ^ 攸一舳部到中間部,具有既定寬,直線 狀延伸,同時,從中M都& 口 且深 端部,形成具有擴大成錐 度Μ層’將光阻層當作光罩,藉由反應性離子钱 刻法’來除去覆蓋在光阻層之部份以外之核心層, '層所留下來之直線狀延伸,並且,ϋ由氯氧燃燒器,在 下^包覆層(其係具有擴大成錐形形狀之核心層)之表面堆 積形成上部包覆層’以此方式,將形成有上部包覆層之石夕 基板加熱,使上部包覆層也透明化而製成。 本發明之第1光源裝置,其係備有:光放大裝置(其係 =述構成之第1光放大裝置或藉由上述第i製造方法所製 k之光放大u )、照射光源(其係射出照射光)、激發光源 (其係射出激發光)、照射光導入路(其係從入口部,將照射 光源所射出⑼射料入到光放大導波路内)、α及激發 光導入路(其係從入口冑’將激發光源所射出之激發光導 入到光放大導波路内),透過照射光導入路及激發光導入 路,將照射光及激發光導入到光放大導波路内,藉由激發 200403463 光之作用,將照射光放大,從出口部射出之構成。 在上光源裝置中,能由雷射光源(其係射出既定波長之 雷射光)來構成照射光源。 乂本毛月之第2光放大裝置,其係設有光放大導波路(其 係在破璃基板上,具#既定之截面形狀,從人口部到出口 部持續延伸)來構成,在光放大導波路之後部,設置導波 路型之光開關來構成。若作成這種構成的話,則因光放大 裝ΪΪ身具有光開關,故不必另外設置切換元件或調變器 ,能簡單形成使用光放大裝置所構成之裝置之構造, 降低製造成本。 入 、 ,較佳係在玻璃基板上形成光導波路(其係與光放大 f波路之後部鄰接且並行延伸),將藉由光開關,從入口 部射入到光放大導波路且放大之光訊號分成光放大導波路 之後部或光導波路,來進行流量控制之構成。此時,能由 方向性耗纟器型開關來構成’織大導波路之後部及:導 波路係隔既定間隔,在近接部份設置光開關,使用熱光效 應、電光效應'或聲光效應、,將射入到光放大導波路:光訊 魂分成光放大導波路之後部或光導波路,來進行流量控制 本發明光放大裝置之第4製造方法,其係在添加稀土 :兀素之玻璃基板表面,設置第丨開口(從一端部到另一 7側,以既定寬延伸)和第2開口(在前述第丨開口之另一 ^部附近’與帛1開口相鄰且並行延伸到另-端側),幵, 成膜,將玻璃基板浸在熔融液(其係將含有一價離子之^ 200403463 ^生鹽加熱到熔點以上而製成)中既定時間,以在位於玻璃 基板表面之第1及第2開口之部份,形成光導波路之2條 回折射率區域,從玻璃基板除去膜,在玻璃基板上施加電 匆而使2條面折射區域埋入玻璃基板之内部,形成光放 大$波路及第2導波路,在光放大導波路之後部及第2導 波路上方之玻璃基板表面’使用光微影技術,形成熱光效 ^邊光效應或聲光效應用之元件,來構成方向性|馬合器 本發明光放大裝置之第5製造方法,其係在玻璃基板 之表面,設置第1開口(從一端部到另一端側,以既定寬 之伸)和第2開口 (在第1開口之另一端部附近,與第^開 口相鄰且並行延伸到另_端側),形成膜 璃基板…及第2開口之部份,係藉由離子注:法:; 加稀土類元素,將玻璃基板浸在熔融液(將含有一價離子 之中性鹽加熱到炼點以上而製成)中既定時間,以在位於 玻璃基板表面之第1及前述第2肖口之部份,形成光導波 路之2條高折射率區域,從玻璃基板除去膜,在玻 上施加電場’而使2條高折射區域埋人玻璃基板之内部, ^光放·大導波路及第2導波路,在光放大導波路之後部 :2 ¥波路上方之玻璃基板表面,使用光微影技術,形 成熱光效應、電光效應或聲光效應用之元件,來 性耦合器。 V ^ 本發明光放大裝置之第6製造方法,其係 燒器,在矽基板之表面堆籍取士 ^ ^ 表堆積形成下部包覆層,藉由氫氧燃 200403463The 2UU4034W electric field is made by embedding the inside of the broken glass substrate in the area. ㈣Glass:; = In the method, it is preferred to be based on the size of the film opening width, which can be immersed in the melt solution for 5 weeks. In the oxygen-generating burner of the optical amplifying device of the present invention, in the # Α method of the silicon substrate, the lower surface is formed by stacking six surfaces with hydrogen and crying. 〇. In the lower part, a core with a high refractive index such as lin and ^ is formed, and a rare earth element ^ g is added to the product, so that the silicon substrate forming the lower enveloping sound and core layer is heated, so that the lower adjacent Scoop ... After the dagger layer 1, the α 卩 coating layer and core layer are transparent. On the surface of the core layer, a mountain ^ ^ ^ is a part from the middle to the middle, with a predetermined width and a linear extension. At the same time, from M Both & mouth and deep end, forming a layer with an enlarged taper M layer 'use the photoresist layer as a photomask, and use the reactive ion money engraving method' to remove the core layer covering the part of the photoresist layer, 'The linear extension of the layer is left, and the upper cladding layer is formed on the surface of the lower cladding layer (which has a core layer enlarged into a cone shape) by a chlorine-oxygen burner.' The stone cladding substrate on which the upper cladding layer is formed is heated to make the upper cladding layer transparent as well. The first light source device of the present invention includes: an optical amplifying device (which is the first optical amplifying device having the structure described above or a light amplifying u u produced by the i-th manufacturing method), and an irradiating light source (whose system is Emitting irradiation light), excitation light source (which emits excitation light), irradiation light introduction path (from the entrance part, the radon injection material emitted by the irradiation light source is entered into the optical amplification waveguide), α and excitation light introduction path ( It is to introduce the excitation light emitted from the excitation light source into the light amplification waveguide from the entrance 胄), and then, through the irradiation light introduction path and the excitation light introduction path, the irradiation light and the excitation light are introduced into the light amplification guide path. The structure that excites the effect of 200403463 light, amplifies the irradiation light, and emits the light from the exit portion. In the upper light source device, an irradiation light source can be constituted by a laser light source (which emits laser light of a predetermined wavelength). Hagimoto Maoyue's second optical amplifying device, which is provided with an optical amplifying waveguide (which is connected to a broken glass substrate and has a predetermined cross-sectional shape #, extending continuously from the population section to the exit section). A waveguide-type optical switch is provided at the rear of the waveguide. If this structure is made, since the light amplification device has an optical switch, it is not necessary to provide a switching element or a modulator separately, and the structure of the device composed of the light amplification device can be simply formed, and the manufacturing cost can be reduced. It is preferable to form an optical waveguide on the glass substrate (which is adjacent to and parallel to the rear of the optical amplification f-wave path), and the optical signal will be injected from the entrance to the optical amplification waveguide and the amplified optical signal through the optical switch. It is divided into the rear part of the optical amplification waveguide or the optical waveguide for the flow control. At this time, the directional consumable type switch can be used to form the 'back of the large waveguide wave path and the waveguide wave path are arranged at predetermined intervals, and optical switches are arranged in the near part, using the thermo-optic effect, electro-optical effect' or acousto-optic effect Into the optical amplification waveguide: the optical communication soul is divided into the rear part of the optical amplification waveguide or the optical waveguide for flow control. The fourth manufacturing method of the optical amplification device of the present invention is based on the addition of rare earth glass. On the surface of the substrate, a first opening (from one end to the other 7 sides, extending with a predetermined width) and a second opening (near the other ^ portion of the aforementioned first opening ′) are adjacent to and parallel to the opening 帛 1. -End side), 幵, forming a film, immersing a glass substrate in a molten liquid (made by heating ^ 200403463 ^ raw salt containing a monovalent ion above a melting point) for a predetermined time in order to The first and second openings form the two refractive index areas of the optical waveguide, remove the film from the glass substrate, and apply electrical rush to the glass substrate to bury the two surface refractive areas into the glass substrate to form light. Zoom in $ wave and 2nd Guided wave path, using the light lithography technique on the glass substrate surface behind the optically amplified guide wave path and above the second guided wave path to form a thermo-optical effect ^ edge light effect or acousto-optic effect element to form directivity | 马 合The fifth manufacturing method of the optical amplifying device of the present invention is provided on the surface of a glass substrate, and includes a first opening (from one end portion to the other end side with a predetermined width extension) and a second opening (on the other side of the first opening). Near one end, adjacent to the ^ opening and extending in parallel to the other _ end side), to form a film glass substrate ... and the part of the 2nd opening, by the ion implantation method: adding rare earth elements, the glass substrate Immerse in a molten liquid (made by heating a neutral salt containing monovalent ions above the refining point) for a predetermined time to form the optical waveguide on the first and second parts of the glass substrate surface Two high-refractive-index regions, the film is removed from the glass substrate, and an electric field is applied to the glass to bury the two high-refractive regions inside the glass substrate. Behind the wave path: 2 ¥ Glass substrate table above the wave path , Using photolithography, to form a thermo-optic effect element, or electro-optic effect of the acousto-optical effect used to coupler. V ^ The sixth manufacturing method of the optical amplifying device of the present invention, which is a burner, piles up and collects documents on the surface of the silicon substrate ^ ^ The surface is formed to form a lower cladding layer, which is ignited by oxygen and hydrogen 200403463

t ’在下部包覆層之表面,堆積形成添加稀土類元素及 填等之高折射率之核心層,將形成下部包覆層及核心層之 石夕基板加熱’使下部包覆層及核心層透明化,在核心層之 形成第1光阻層(從一端部到另一端側,以既定寬 延伸)和第2光阻層(在第1光阻層之另-端部附近,與第 層相4且並行延伸到另_端側),將光阻層當作光I ,藉由反應性離子姓刻法’來除去覆蓋在光阻層之部份以 外之核心層,在且有险土 隹一有除去先阻層所留下來之第丨及第2核 心層之之下部包 層之表面,猎由氫氧燃燒器,堆積形成 口 P匕覆層’將形成上立β 4 。匕伋層之矽基板加熱,使上部包 覆層也透明化,在藉由^ 之後部及藉由第2rt 形成之光放大導波路 層所形成之第2導波路之上方之上 表面,使用光微影技術,形成熱光效應、電光效 — 效應用之元件,來構成方向性耦合器。 本發明之第2光源裝置,其係備有: 光放大裝置,其係葬. 上述第4之製造方法來Π構成之第2光放大袭置或 照射光源,其係射出照射光; 激發光源、,其係、射出激發光; 將照射光源所射出之 照射光導入路,其係從入口部, 照射光導入到光放大導波路内; 將激發光源所射出 激發光導入路,其係從入口部, 之 激發光導入到光放大導波路内;以及 開關動作控制裝 〃係進仃光開關之動作控制; 12 200403463 透過峨導入路及激發光導入路,將照射光及激發 光¥入到光放大導波路内,#由激發光之作用,將所放大 之照射光’根據藉由開關動作控制裝置之光開關之動作控 制’從光放大導座跋芬穿 ¥波路及弟2導波路之出口端部分別射出之 構成。 又’在上述光源裝置,照射光源能由射出既定波長雷 射光之雷射光源所構成。 * 本發明之第3光放大裝置,其係設置光放大導波路(在 玻璃基板上,卩既定截面形狀延伸)來構成,上述光放大 導波路係由1條入口側導波路(從入口部延伸至第1中間部 )和複數個分歧導波路(在第1中間部中,從入口側導波路 分歧:向出口部延伸)所構成。這樣一來,藉由複數個分 支V波路在抑制產生雜訊光或自我相位調變,且在各分 歧‘波路可產生之放大功率’即使有極限,配合各分歧導 波路所產f之放大光,藉此不產生雜訊光或自我相位調變 ,能得到高功率之光。 又,在該光放大裝置中,較佳構成係複數個分歧導波 路中之至少、2條在第2中間部合波,成為1條出口側導波 路,延伸到前述出口部。這種情形…側導波路、分歧 導波路及前述出口料波路係具有能保持單模尺寸之構成 在玻璃基板上,也可設置激發光用導波路(用來導入激 發光)、和合波機構(將通過激發光用導波路所供應之激發 光合波在分歧導波路内)。該合波機構能由分波多工器來 13 構成。 口 /由回折射區域(將入口側導波路、分歧導波路及出 貝1導波路形成在添加稀土類元素之玻璃基板内)來構成 0 乂 2,當設置激發光用導波路及合波機構之情形,較佳 '、二入口側導波路及分歧導波路之入口側到前述合波螂 構,口%係由未添加稀土類元素之一般玻璃所形成之高折 射區或所構成’從分歧導波路之合波機構,出口側部份及 J導波路係由添加稀土類元素之玻璃基板所形成之高 折射區域所構成。 ^本备明之第4光放大裝置係使用放大用光纖來構成, 名放大用光纖係由1條入口側光纖(從入口部延伸至第1中 間部)和複數條分歧光纖(在第1中間部,從入口側光纖分· 歧、:向出口部延伸)所構成。在該光放大裝置中,配合來1 自複數個分歧光纖之放大光,使不產生雜訊光或自我相位 調變’能得到高功率之光。 此時,較佳構成係複數條分歧光纖中之至少2條在第 2中間邛合波,成為丨條出口側光纖,延伸到前述出口部 。乂種情形,入口側光纖、分歧光纖及出口側光纖係具有 能保持單模尺寸之構成。 也可設置激發光用光纖(用來導入激發光)和合波機構( 連接激發光用光纖和分歧光纖,將通過前述激發光用光纖 所供應之激發光合波在前述分歧光纖内)。該合波機構能 由分波多工器來構成。 200403463 1 Y係入口側光纖、分歧光纖及出口側光纖能由添加 · 稀土巧凡素之光纖所構成。X,當設置激發光用光纖及合 波機構之情形’從入口側光纖及分歧光纖之入口側到合波 钱構之ΙΜ刀係由未添加稀土類元素之一般光纖所構成,從 /刀歧光、截之合波機構,出口側部份及出口側光纖係由添加 稀土類元素之光纖所構成。 本舍明之第3光源裝置,其係備有: 第3光放大ι置,其係在上述玻璃基板上,設置光放 大導波路來構成; · 照射光源’其係射出照射光;以及 激發光源,其係射出激發光; 從入口部,將來自照射光源之照射光導入到光放大導 波路内’ *來自激發光源之激發光導人到人π部或從激發· 光用導波路導人到光放大導波路内,在光放大導波路内,’ 错由激發光之作用’將照射光放大,從出口部射出之構成 〇 本發明之第4光源裝置,其係備有: _ 第4光放大裝置,其係使用上述之放大用光纖來構成 照射光源,其係射出照射光;以及 . 激發光源,其係射出激發光; · 從入口部,將來自照射光源之照射光導入到放大用光 纖内,將來自激發光源之激發光導入到入口部或從激發光 用光纖導入到放大用光纖内,在放大用光纖内,藉由激發 15 200403463 射出之構成。 照射光源能由射出 既定 光之作用,將照射光放大,從出 又,在上述光源裝置,其中 波長雷射光之雷射光源來構成。t 'On the surface of the lower cladding layer, a core layer with a high refractive index added with a rare earth element and a filler is deposited, and the stone substrate that forms the lower cladding layer and the core layer is heated.' The lower cladding layer and the core layer are heated. Transparency, forming a first photoresist layer (extending a predetermined width from one end to the other end side) and a second photoresist layer (near the other-end portion of the first photoresist layer and the first layer on the core layer) Phase 4 extends in parallel to the other end side), the photoresist layer is regarded as light I, and the core layer covering the part other than the photoresist layer is removed by the reactive ion surname engraving method. First, the surface of the lower cladding layer of the first core layer and the second core layer left after removing the pre-resistance layer is collected by a hydrogen and oxygen burner to form a port P cladding layer, which will form a standing β 4. The silicon substrate of the dipper layer is heated to make the upper cladding layer transparent as well. The upper surface of the second waveguide, which is formed by the light amplification waveguide layer formed by the second rt, is used for light. Lithography technology, forming the thermo-optic effect and electro-optic effect-the components used to effect, to form a directional coupler. The second light source device of the present invention is provided with: a light amplifying device, which is buried. The second light amplifying or irradiating light source formed by the fourth manufacturing method described above emits irradiation light; an excitation light source, It is used to emit excitation light; the irradiated light emitted from the irradiated light source is introduced into the light path from the entrance; the irradiated light is introduced into the optical amplification waveguide; the excited light is emitted from the irradiated light source to be introduced from the entrance The excitation light is introduced into the light amplification waveguide; and the switch operation control device is the operation control of the optical switch; 12 200403463 Through the E channel and the excitation light channel, the irradiation light and the excitation light are entered into the light amplification. In the guided wave path, # the amplified illumination light is controlled by the action of the optical switch of the switch action control device through the action of the excitation light. The light is passed through the light guide base, Buffin, and the exit end of the guided wave path. The composition of each part is shot. In the light source device described above, the irradiation light source can be a laser light source that emits laser light of a predetermined wavelength. * The third optical amplifying device of the present invention is configured by providing an optical amplifying waveguide (a predetermined cross-sectional shape is extended on a glass substrate). The optical amplifying waveguide is composed of one entrance-side waveguide (extending from the entrance portion). To the first intermediate section) and a plurality of diverging waveguides (the first intermediate section diverges from the entrance-side waveguide: extending toward the exit section). In this way, by using a plurality of branch V-wave paths to suppress the generation of noise light or self-phase modulation, and even if there is a limit on the amplification power that can be generated in each branch, it matches the amplified light produced by each branch waveguide. In this way, no noise light or self-phase modulation is generated, and high-power light can be obtained. In this optical amplifying device, it is preferable that at least two of the plurality of branched waveguides are multiplexed at the second intermediate portion to form one exit-side waveguide and extend to the exit portion. In this case ... the side waveguide, the branch waveguide, and the aforementioned exit material wave path have a structure capable of maintaining a single-mode size on a glass substrate, and a guide wave path for excitation light (for introducing excitation light) and a multiplexing mechanism ( The excitation light supplied by the excitation light waveguide is multiplexed in the branched waveguide). The multiplexing mechanism can be composed of a demultiplexer 13. 0/2 is formed by the refraction region (the entrance-side waveguide, the branched waveguide, and the exit 1 waveguide are formed in a glass substrate added with a rare earth element), and when the waveguide and the multiplexing mechanism for the excitation light are provided In the case, it is preferable that the two entrance-side guided wave paths and the divergent guided-wave paths to the aforementioned multiplex structure have a high-refractive region or a high-refraction area formed by ordinary glass to which rare earth elements are not added. The multiplexing mechanism of the guided wave path, the exit side part and the J guided wave path are composed of a high-refraction region formed by a glass substrate added with a rare earth element. ^ The fourth optical amplifying device of the present invention is constructed using an optical fiber for amplification. The optical fiber for amplification is composed of one entrance-side optical fiber (extending from the entrance portion to the first intermediate portion) and a plurality of branching optical fibers (in the first intermediate portion). , Divided from the optical fiber on the inlet side, and branched to the outlet). In this optical amplifying device, amplifying light from a plurality of branched optical fibers is used so that no high-power light can be obtained without generating noise light or self-phase modulation. At this time, it is preferable that at least two of the plurality of branched optical fibers are multiplexed at the second middle to form an exit-side optical fiber and extend to the aforementioned exit portion. In either case, the entrance-side fiber, branch fiber, and exit-side fiber have a structure capable of maintaining a single-mode size. An excitation optical fiber (for introducing excitation light) and a multiplexing mechanism (connecting the excitation optical fiber and the branched optical fiber, and multiplexing the excitation light supplied through the aforementioned excitation optical fiber into the branched optical fiber) may also be provided. This multiplexing mechanism can be constituted by a demultiplexer. 200403463 1 Y-based entry-side fiber, branch fiber, and exit-side fiber can be composed of a rare-earth fiber. X, when an excitation light fiber and a multiplexing mechanism are provided, 'the IM blade from the entrance side optical fiber and the divergent fiber entrance side to the multiplexing structure is composed of a general optical fiber with no added rare earth element, and the The optical and truncating multiplexing mechanism, the exit side part and the exit side optical fiber are composed of an optical fiber added with a rare earth element. The third light source device of the present invention includes: a third light magnification unit, which is configured on the above glass substrate by providing a light amplification waveguide; an irradiation light source, which emits irradiation light; and an excitation light source, The system emits excitation light; from the entrance, the irradiated light from the irradiated light source is introduced into the light amplification waveguide. * The excitation light from the excitation light source is guided to the human π portion or from the excitation and light guided waveguide to the light amplification. In the guided wave path, in the optical amplification guided wave path, a structure that amplifies the irradiated light by the action of the excitation light and emits it from the exit portion. The fourth light source device of the present invention is equipped with: _ the fourth optical amplification device , Which uses the above-mentioned amplification optical fiber to constitute an irradiation light source, which emits irradiation light; and. An excitation light source, which emits excitation light; The excitation light from the excitation light source is introduced into the entrance or the excitation light fiber is introduced into the amplification optical fiber, and the excitation light is emitted by the excitation 15 200403463 in the amplification optical fiber. The irradiating light source can be configured to emit a predetermined light and amplify the irradiating light. From the above-mentioned light source device, a laser light source having a wavelength of laser light can be configured.

本發明之第5光放大裝置,其係備有光放大導波路(在 玻璃基板上’以既定截面形狀形成),和合分波機構(設置 在光放大導波路之出口部),當訊號光及激發光從光放大 導波路之入口部射入到光放大導波路内時,合分波機構係 通過先放大導波路内,將所放大之訊號光和激發光分離, :使攸出口部射出之構成。並且,設置激發光機構,其係 精由合分波機構來分離,使所射出之激發光反射,將藉由 激發光反射機構所反射之激發光,透過合分波機構,從出 口。Ρ射入到光放大導波路内。這樣—| ’從人口部射入, 藉由反射機構,將用來放大訊號光之激發光反射,再射入 J光放大V波路内,藉此能再加以利用,故能提高訊號光 之放大效率。 又’合分波機構能由分波多工器來構成,光放大導波 路係具有能保持單模尺寸之構成。激發光反射機構能由光❿ 學反射鏡來構成,或能由反射型之布拉格(Bragg)繞射光栅 來構成。 本發明之第6光放大裝置,其係備有: 光放大導波路,其係在玻璃基板上,具有既定之截面 形狀來形成; 第1合分波機構,其係設置在光放大導波路之入口部 ;以及 16 200403463 第 合分波機構,其係設置在光放大導波路之出口 部 號光射入到Y:機構之構成係從入口部將外部所射入之訊 出口部將夕h所Γ波路内;第2合分波機構之構成係從 又一所射入之激發光射入到光放大導波路内。 將從:f 1合分波機構之構成係透過第2合分波機構: ’ 口邛射入到光放大導波路内之激發光,愈气_光之 射入路徑,锈π甘^ Λ唬先之 合分波機椹路徑,從入口部向外部射出;第2 <構成係透過第1合分波機構,將從入口部射 ^ |放大導波路内被放大之訊號光,與激發光之射入路 瓜,透過其他之路徑,從出口部向外部射出。 又°又置有激發光反射機構,其係使藉由第丨人 =出之激發光反射;將藉由激發光反射機構二: ,光透過前述第i合分波機構,從入口部射入到光放 效:波路内。這種情形,也能再利用激發光,來提高放大 在該光放大裝置中,第U分波機構及第2合分波機 ::分別由分波多工器來構成’光放大導波路係具有能保 持早拉尺寸之構成。激發光反射機構係由光學反射鏡或反 射型之布拉格繞射光柵所構成。 本發明之第7光放大裝置,其係備有:i條放大用光· 纖、以及合分波機構(設置在放大用光纖之出口部)。 當訊號光及激發光從放大用光纖之入口部射入到放大 用光纖内時’合分波機構之構成係將通過放大用光纖内所 17 200403463 放大之訊號光和激發光分離,從出口部射出。 又,設置有激發光反射機構,其係使藉由合分波機構 來分離並加以射出之激發光反射;將藉由激發光反射機構 所反射之激發光透過合分波機構,從出口部射入到放大用 光纖内。 在该光放大I置中’該合分波機構也能由分波多工器 來構成,放大用光纖係具有能保持單模尺寸之構成,激發 光反射機構係由光學反射鏡、或反射型之布拉格繞射光栅 所構成。 本發明之第8光放大裝置,其係備有: 1條放大用光纖;The fifth optical amplifying device of the present invention is provided with an optical amplifying waveguide (formed in a predetermined cross-sectional shape on a glass substrate) and a multiplexing / demultiplexing mechanism (installed at the exit of the optical amplifying waveguide). When the excitation light enters the optical amplification waveguide from the entrance of the optical amplification waveguide, the multiplexing / demultiplexing mechanism separates the amplified signal light and the excitation light by first amplifying the waveguide, so that the emission from the exit section Make up. In addition, an excitation light mechanism is provided, the system of which is separated by the multiplexing and demultiplexing mechanism, so that the emitted excitation light is reflected, and the excitation light reflected by the excitation light reflecting mechanism is transmitted through the multiplexing and demultiplexing mechanism and exits. P enters the optical amplification waveguide. In this way— | 'Injected from the population department, through the reflection mechanism, the excitation light used to amplify the signal light is reflected, and then injected into the J-wave amplification V wave path, so that it can be reused, so the signal light amplification can be improved. effectiveness. The multiplexing / demultiplexing mechanism can be constituted by a demultiplexing multiplexer, and the optical amplification waveguide system has a constitution capable of maintaining a single-mode size. The excitation light reflection mechanism can be constituted by an optical mirror, or can be constituted by a reflection type Bragg diffraction grating. The sixth optical amplifying device of the present invention includes: an optical amplifying waveguide which is formed on a glass substrate and has a predetermined cross-sectional shape; and a first multiplexing / demultiplexing mechanism which is provided on the optical amplifying waveguide. The entrance section; and 16 200403463 the first multiplexing and demultiplexing mechanism, which is provided at the exit section number of the optical amplification waveguide and the light is incident to the Y: the structure of the mechanism is the entrance section of the entrance section In the Γ wave path; the structure of the second multiplexing / demultiplexing mechanism is that the excitation light incident from another is incident into the optical amplification waveguide. From the composition of the f 1 multiplexing / demultiplexing mechanism is through the second multiplexing / demultiplexing mechanism: 'The excitation light that enters the optical amplification waveguide with the mouth opening, the gas_light path, rust π ^ The first multiplexer / demultiplexer path exits from the entrance to the outside; the second < structure is transmitted through the first multiplexer and demultiplexer from the entrance ^ | the amplified signal light in the guided wave path and the excitation light It shoots into the gourd and shoots out from the exit to the outside through other paths. There is also an excitation light reflection mechanism, which reflects the excitation light emitted by the first person =; the excitation light reflection mechanism two: The light passes through the i-th multiplexing and demultiplexing mechanism and enters from the entrance To light effect: within the wave. In this case, the excitation light can be reused to increase the amplification. In this optical amplification device, the U-th branching mechanism and the second multiplexer / demultiplexer: are each composed of a demultiplexing multiplexer. Can maintain the composition of early drawing size. The excitation light reflection mechanism is composed of an optical mirror or a reflection type Bragg diffraction grating. A seventh optical amplifying device according to the present invention includes: i amplification optical fibers and fibers, and a multiplexing / demultiplexing mechanism (installed at an exit portion of the optical fiber for amplification). When the signal light and the excitation light enter the amplification optical fiber from the entrance of the amplification optical fiber into the amplification optical fiber, the composition of the multiplexing / demultiplexing mechanism is to separate the signal light and the excitation light amplified from the amplification optical fiber inside the 200404463 and exit the exit Shoot out. In addition, an excitation light reflection mechanism is provided, which reflects the excitation light separated and emitted by the multiplexing / demultiplexing mechanism; and transmits the excitation light reflected by the excitation light reflecting mechanism through the multiplexing / demultiplexing mechanism and emits it from the exit portion. Into the amplification fiber. In the optical amplifying center, the multiplexing / demultiplexing mechanism can also be constituted by a demultiplexing multiplexer. The amplifying optical fiber system has a structure capable of maintaining a single-mode size. The excitation light reflecting mechanism is an optical mirror or a reflective type. Bragg diffraction grating. The eighth optical amplifying device of the present invention includes: one optical fiber for amplification;

第1合分波機構,其係設置在放大用光纖之入口部; 以及 I :2合分波機構’其係設置在放大用光纖之出口部; 第1合分波機構之構成係從入口部將外部所射入之茂 號光射入到放大用光纖内;"合分波機構之構成係從前 \出口部將外部所射人之激發光射人到放大用光纖内。又 ’第1合分波機構之構成係透過第2合分波機構,將從出 口部射人到放大用光❹之前述激發光,透過與訊號光之 射入路徑之其他之路徑,從入口部向外部射出;第卜分 波機構之構成係透過第1合分«構,難人π部射I到 放大用光纖内被放大之訊號光,透過與激發光之射入路徑 之其他路徑,從出口部向外部射出。 又,設置有激發光反射機構,其係使藉由第ι合分波The first multiplexing / demultiplexing mechanism is provided at the entrance portion of the amplification optical fiber; and I: 2 multiplexing / demultiplexing mechanism is provided at the exit portion of the amplification optical fiber; the configuration of the first multiplexing / demultiplexing mechanism is from the entrance portion. The externally emitted Mao light is entered into the amplification optical fiber; " The composition of the multiplexing / demultiplexing mechanism is to radiate the excitation light emitted from the outside into the amplification optical fiber from the front \ exit section. The structure of the first multiplexing / demultiplexing mechanism is through the second multiplexing / demultiplexing mechanism, and the aforementioned excitation light, which is radiated from the exit to the amplification light beam, passes through the other path with the incident path of the signal light from the entrance. The component of the No. 2 demultiplexing mechanism is transmitted through the first splitting structure. It is difficult for the π part to emit I to the amplified signal light in the amplification fiber, and other paths of the incident path of the transmission and excitation light. Shoot out from the exit. In addition, an excitation light reflection mechanism is provided.

18 200403463 機構分離且射出之激發光反射 考了,將猎由激發光反射機構所 反射之激發光透過第1合分波機 从 刀疚执構,從入口部射入到放大 用光纖内。 在該光放大裝置,第丨合分 刀收俄構及弟2合分波機構 係分別由分波多工器所構成,放 反执構 穴用先、截係具有能保持單 模尺寸之構成,激發光反射機構係由光學反射鏡或反射型 之布拉格繞射光栅所構成。 - 本發明之第5光源裝置,其係備有: 第5光放大裝置,其係上述本發明之光放大裝置; 照射光源,其係射出照射光;以及 激發光源’其係射出激發光; 編入口部或出口部’將來自照射光源之照射光及 來自前述激發光源之激發光導入到光放大導波路 放大導f路内,藉由激發光之作用,將前述照射光放大,· 亚且’糟由合分波機構加以分離’從出口部射出之構成。 又,在上述光源裝置中,昭射氺〜 身 < i T &射先由射出既定波長雷射 光之雷射光源來構成。 另一方面,本發明之光治療裝置係備有·· 光源裝置,其係上述構成之光源裝置; 波長轉換器’其係將從光源裝置之出口部所射出之照 射光轉換為既定波長之治療用照射光;以及 照射光學系統’其係將藉由波長轉換器所轉換之照射 光導引到治療部位,來進行照射。 …、 又’本發明之曝光裝置係備有·· 19 200403463 波長轉換器,其係將從光源裝置之出口部所 射光轉換為既定波長之照射光; 之照 光罩支持#,其係保持既定曝光圖案所設置之 物勿保持部,其係保持曝光對象物; 罩’ 照明光學系統,其係使藉由波長轉換器所轉 光照射在光u持部所保持之光n及 π射 投影光學系統,其係透過照明光學系統,照置 象^通過光罩之照射光照射對象物保持部所保持之曝光對 [實施方式] 以了,針對發明之較佳實施形態’ 一面參照圖面,一 面加以說明。 第1圖,係顯示本發明第丨實施形態之光放大裴置】— ’在添加有稀土類元素之玻璃基才反2内部,具有從卢 延伸到右端面進行光放大的朵I、'由 工而 延仃光放大的先導波路3。該光導波路3係 由第1導波路3a(從位於左端面之入口部“相同戴面开; 狀直線延伸到中間部A)及第2導波路3b(與該第i導波路 3a平滑連接,且從中間部A向位於右端面之出口部仆,緩 慢擴大為錐形)所構成。又’第丨導波路^為了保持單模 ’設定了折射率、導波路寬(截面積)等,且第2導波路扑 ,係在能保持單模之範圍,將導波路擴大為錐形。 7又,若導波路3之形狀係對中心軸(訊號光、激發光之 行進方向)成對稱的話,則第2導波路3b之錐形也可擴大 20 200403463 的範圍。只要導波路之寬度是從第 地擴大成錐形,曰^ 丁 & 第丄導波路〇軸的話,則即使傳輪於 之心虎光、激發光進入第2導波路3b之區 5 ,二不致激振出基本模(〇次模)以外之高次模。 弟2U)〜⑻圖中顯示了帛1導波路3a及第2導波路 二面狀’有如第2U)圖所示,第1導波…圓 自〔a(Pl) ’第2導波路3b維持圓形截面3b(Ql)的狀 Απ工右擴大成錐形者;如第2⑻圖所示,帛1導波路 =為圓形截面_),第2導波路3b僅在左右擴大成錐 厂成擴圓狀3b(q2)者;如第2(C)圖所示,第i導波路 m截Φ 3a(p3)’第2導波路3b維持正方形截面 ,J省狀態上下左右擴大成錐形者;及如帛2(D)圖所示 弟1 ‘波路3a為正方形截面3a(p4),帛2導波路 在左右擴大成錐形,形成長方形狀3b(q4)者。 ^光放大n卜當從人口部4a射人訊號光與激發光時 I光導波路3内藉由激發光之激發作用將訊號光放大 ,特別係在寬度窄(截面積小)之第ι導波路%之部份,能 以良好的效率激發訊號光’因此,具有導波路長度短也可 ,優點。此時,由於在第2導波路3b中使導波路擴大成雜 $因此’在該部份,訊號光之模場徑(MFD)被擴大,使光 密度緩慢地減低,而抑制受激拉曼散射(如_伽 Scatter^ : SRS)、四光波混合(F·—^ Μι_ ·· ) 、自,相,調變(Self Phase M〇duiati〇n : spM)之產生。 又,虽使第2導波路3b擴大成錐形到成為多模範圍之情形18 200403463 The excitation light emitted by the mechanism is separated and reflected. It is considered that the excitation light reflected by the excitation light reflection mechanism is transmitted through the first multiplexer from the knife to the structure, and is injected into the optical fiber for amplification from the entrance. In this optical amplifying device, the first and second split-receiver and second-division multiplexers are respectively composed of a demultiplexer, and the first and second systems for the anti-pattern cavity have a structure capable of maintaining single-mode size. The excitation light reflection mechanism is composed of an optical mirror or a reflective Bragg diffraction grating. -The fifth light source device of the present invention includes: a fifth light amplification device that is the light amplification device of the present invention described above; an irradiation light source that emits irradiation light; and an excitation light source that emits excitation light; The entrance or exit section 'introduces the irradiation light from the irradiation light source and the excitation light from the aforementioned excitation light source into the light amplification waveguide and the amplification guide f, and amplifies the aforementioned irradiation light by the action of the excitation light. It is composed of a multiplexing / demultiplexing mechanism and is emitted from the exit. Further, in the light source device described above, the radiant beam < i T & emission is first constituted by a laser light source which emits laser light of a predetermined wavelength. On the other hand, the light treatment device of the present invention is provided with a light source device, which is a light source device having the above-mentioned configuration; and a wavelength converter, which is a treatment that converts the irradiation light emitted from the exit portion of the light source device to a predetermined wavelength. With the irradiation light; and the irradiation optical system, which guides the irradiation light converted by the wavelength converter to the treatment site for irradiation. ... "The exposure device of the present invention is equipped with a 19 ... 20043463 wavelength converter, which converts light emitted from the exit portion of the light source device into irradiation light of a predetermined wavelength; the photomask supports #, which maintains a predetermined exposure The object provided by the pattern does not hold the part, it is to hold the object of exposure; the cover 'illumination optical system is to make the light n and the π-ray projection optical system held by the light u holding part by the light converted by the wavelength converter. It is through the illumination optical system, the image is set ^ the exposure held by the object holding portion through the irradiated light through the mask [Embodiment] In view of the preferred embodiment of the invention ', referring to the drawings, Instructions. FIG. 1 is a light amplification display device according to the first embodiment of the present invention] — 'Inside the glass base with rare earth elements added, there is a light I, which extends from Lu to the right end surface for light amplification.' The pilot wave path 3 for optical amplification is extended. The optical waveguide 3 is composed of a first waveguide 3a (opened from the same wearing surface on the left end face; the straight line extends to the middle portion A) and a second waveguide 3b (smoothly connected to the i-th waveguide 3a, And from the middle part A to the exit part located on the right end surface, it gradually expands into a tapered shape. It also sets the index of refraction, the width of the guided wave path (cross-sectional area), etc. in order to maintain the single mode, and The second waveguide is fluttered in a range capable of maintaining a single mode, and the waveguide is enlarged into a cone. 7 Also, if the shape of the waveguide 3 is symmetrical about the central axis (the direction of travel of the signal light and the excitation light), The tapered shape of the second waveguide 3b can also be increased by 20 200403463. As long as the width of the waveguide is enlarged from the ground to the cone, ^ D & The second waveguide 0 axis, even if the transmission wheel is on it Heart tiger light and excitation light enter the area 5 of the second waveguide 3b. Second, they will not excite the higher-order modes other than the basic mode (zero-order mode). (2U) ~ The figure shows the first waveguide 3a and the second The dihedral shape of the guided wave path is as shown in the figure 2U). The first guided wave ... is rounded from (a (Pl) 'the second guided wave path. 3b maintains the shape of the circular cross section 3b (Ql). Aπ is enlarged to the right side; as shown in the second figure, the ⑻1 guided wave path = has a circular cross section _), and the second guided wave path 3b is enlarged into a cone only on the left and right. As shown in Figure 2 (C), the i-th waveguide m-section Φ 3a (p3) '2nd waveguide 3b maintains a square cross-section, and the state of J province expands up and down into a cone.及 2 (D) as shown in Fig. 2 (D), the wave path 3a has a square cross section 3a (p4), and the wave path 2 of 帛 2 is enlarged to the right and left to taper to form a rectangular 3b (q4). When the signal light and the excitation light are emitted from the population department 4a, the signal light in the I light guide wave path 3 is amplified by the excitation effect of the excitation light, especially in the narrow width (small cross-sectional area) part of the ith guide wave path. It can excite the signal light with good efficiency. Therefore, it has the advantage that the length of the guided wave path is short. At this time, since the guided wave path is enlarged into the miscellaneous wave in the second guided wave path 3b, so in this part, the signal light The mode field diameter (MFD) is enlarged to reduce the optical density slowly, while suppressing stimulated Raman scattering (such as _Ga Scatter ^: SRS), four light wave mixing (F · — ^ Μι_ · ·) Since, phase modulation (Self Phase M〇duiati〇n: spM). The generation and, although the second waveguide 3b is tapered to expand the case to become a multi-mode range

21 200403463 時’:擴大:成為單模範圍之情形相較,能進一步控制受 激拉哭散射等所造成之雜訊光 尤i產生與自我相位調變之產 生。 光放大裝t (其2) 弟3圖係顯示光放大哭播士 口口構成之不同例(第2實施形態) 。該光放大器卜係由第1導波路3a,(從入口部4a以同 一截面形狀直線延伸到第1中間部…、第2導波路 %,(與該第1導波路3a,平滑連接,且從第!中間部A到第 2中間部B,緩慢地擴大成錐形狀者)、及第3導波路3。,( 與弟2導波路儿,平滑地連接,並且用同一截面形狀,直 線狀延伸到出口部4b者)所構成。這樣-來,藉由在連接 出口部4 b之部份,設詈筮q道、木 又罝弟3導波路3c,(以同一截面積直 線延伸者),能抑制從出…b射出、被放大之訊號光之· 擴散。第2導波路3b,不限於單模,能擴大成雜形到多模· 之範圍。 光放大裝置(装h 第4圖係光放大器構成之另一不同例(第3實施形態) 。该放大益1 ’係由第1導波路3a”(從入口部4a以同一 截面形狀直線延伸到中間部A者)、與第2導波路…(以 較該第i導波路3a”大之截面形狀,從中間部八到出口部 处直線狀延伸者)所構成。第1導波路3a”之寬(截面積)盘 第2導波路3b”之寬(截面積)係設定在保持單模之範圍。、· 由於導波路之寬度,係採用從第(導波路%,,往第2導波 路3b’’,不設置錐形而急遽變大之構成,故藉由將第2導 22 200403463 波路3b”之寬設定成保持單模之範圍,來防止當訊號光、 激發光進入第2導波路3b,,之瞬間形成基本模式以外之高 次模式。此構成中’同樣的在第2導波路3b”中,訊號光 之模場徑(MFD)被擴大’光密度減低,使受激拉曼散射 (Stimulated Raman Scattering : srs)、四光波混合 (F〇U"ave Mixing : FWM)、自我相位調變ph獄 Modulation : SPM)之產生受到抑制。 - 接著,針對受激拉曼散射(SRS),簡單加以說明。到達 拉曼臨界值所需要之臨界激發功率pcr,一般能 來表示。 rcr = UbAeff)/(gRLeff) 式中,Aeff係導波路之有效面積,UFF係有效作用長 度,gR係拉曼增益係數,係以導波路之材料來決定之值。 由式⑴可知’藉增大有效面積Aeff即能增大臨界激發功 率 Per 〇 器之製诰方^ 其次,針對上述構成之光放大器之製造方法說明如下 〇 塍子交換法 針對藉由離子交換法,來製造上述第丨〜第3實施形 態之光放大器之方法,參照第5圖〜第10圖,加以說明^ 该方法’百先’如帛5圖所示,係在添加铒等稀土類元素’ 之玻璃基板(磷酸酯玻璃、βΚ7玻璃、鈉石灰坡璃等之 表面’採科導體製程所使用之光微影技術,設置符合= 23 200403463 皮路形狀之開口 13,圖案化形成金屬膜丨2。該開口丨3係 對應上述之光導波路3之形狀,由第1開口 1 3a(從一端側 I以既定見度直線狀延伸到中間部者)、與第2開口丨3b( 攸中間部到另一端側,擴大成錐形)所構成。 女其次’如第6圖所示,在熔融液18(將含有Ag等一價 離子之中性鹽加熱至熔點以上熔化而成者)中,如上述般 一將圖案化形成金屬膜丨2之玻璃基板丨丨浸泡既定時間。 藉此如第7圖所示,曝露在熔融液〗8之開口〗3之部份 罪近玻璃表面,鈉(Na)離子被置換為一價之金屬離子 ’而形成作為導波路之高折射區域14(畫有陰線之區域)。 :次,如第8圖所示的除去金屬膜12後,如第9圖所示, #由電極(1 5a,1 5b)來挾持上下兩面並施加電場,如第工〇 :所示的將高折射區域14埋入玻璃基板^内部的話,該 门折射區域14即形成第}圖所示之光導波路3,而製成光 2大裝置1。又,此時,藉由適當設定熔融液18之濃度、 溫度、浸泡時間(離子交換時間)、施加電場等,來將光導 波路3製成為單模之尺寸。 弟1圖或第3圖所示之本發明之光放大器(1,^且# 擴大成錐形之光導波路(3b,3b,),為了形成該形狀之^ 波路而在金屬膜12設置了如上述擴大成錐形之第2開, 13b。糟此’能使高折射區域14之寬度成為對應帛2開〔 13'之擴大成錐形之形狀。但是,這種情形,高折射區知 14係二維(寬度方向)擴大成錐形者,形成第2⑻圖所示; 橢圓狀擴大之光導波路。如帛2(A)圖所示,為了將該光a 24 20040346321 200403463 Hours: Expansion: Compared with the case of single-mode range, it is possible to further control the noise light caused by stimulated tearing and scattering, etc., and the generation of self-phase modulation. Optical magnification device t (2) Figure 3 shows a different example of the optical magnification crying mouth structure (second embodiment). The optical amplifier is composed of a first waveguide 3a, (a straight line extending from the entrance portion 4a to the first intermediate portion ..., a second waveguide%), (a smooth connection with the first waveguide 3a, and No.! The middle part A to the second middle part B are slowly enlarged into a tapered shape), and the third waveguide 3 is connected smoothly to the second waveguide 2 and extends linearly with the same cross-sectional shape. To the exit section 4b). In this way-by connecting the exit section 4b with the 詈 筮 q channel, the wood and the younger brother 3 guided wave path 3c, (a straight extension with the same cross-sectional area), Can suppress the spread of the amplified signal light emitted from ... b. The second waveguide 3b is not limited to single-mode, but can be expanded into a heterogeneous to multi-mode range. Optical amplification device (installed in Figure 4) Another different example of the configuration of the optical amplifier (the third embodiment). This amplification benefit 1 'is formed by the first waveguide 3a "(a straight line extending from the entrance portion 4a to the middle portion A with the same cross-sectional shape), and the second guide Wave path ... (With a cross-sectional shape larger than the i-th waveguide 3a ", it extends straight from the middle part to the exit part. ). The width (cross-sectional area) of the first waveguide 3a ”and the width (cross-sectional area) of the second waveguide 3b” of the disk are set to maintain the single-mode range. (Guided wave path%, toward the second guided wave path 3b ", the structure is sharpened without setting a cone, so the width of the second guided 22 200403463 wave path 3b" is set to maintain the range of single mode to prevent When the signal light and the excitation light enter the second guided wave path 3b, a higher-order mode other than the basic mode is formed instantly. In this configuration, 'the same in the second guided wave path 3b', the mode field diameter (MFD) of the signal light is Reduced optical density reduces the generation of Stimulated Raman Scattering (srs), Four Light Wave Mixing (F0U " ave Mixing: FWM), and Self-Phase Modulation: SPM.- Next, the stimulated Raman scattering (SRS) will be briefly explained. The critical excitation power pcr required to reach the Raman critical value can generally be expressed. Rcr = UbAeff) / (gRLeff) In the formula, Aeff is the part of the guided wave path. Effective area, UFF effective length, gR pull The Mann gain coefficient is a value determined by the material of the guided wave path. From the formula, it can be known that 'by increasing the effective area Aeff, the critical excitation power Per 〇 can be increased. ^ Second, for the optical amplifier of the above structure The manufacturing method is described as follows: The method of manufacturing an optical amplifier according to the first to third embodiments described above by an ion exchange method will be described with reference to FIGS. 5 to 10 ^ This method is a hundred first As shown in Figure 帛 5, the light lithography technology used on the surface of the glass substrate (phosphate glass, βκ7 glass, soda lime glazing, etc.) with the addition of rare earth elements such as rhenium is used for photolithography technology. 23 200403463 The opening 13 in the shape of a pavement is patterned to form a metal film 2. The opening 3 corresponds to the shape of the optical waveguide 3 described above, and is formed by the first opening 1 3a (which extends linearly from the one end side I to the middle with a predetermined visibility), and the second opening 3b (from the middle to the other (One end side, enlarged into a cone). Female second 'As shown in FIG. 6, in the melt 18 (those obtained by heating a neutral salt containing a monovalent ion such as Ag to be melted above the melting point), the pattern is formed into a metal film as described above. The glass substrate 丨 immersed for a predetermined time. Thus, as shown in Figure 7, a part of the melt exposed to the opening [8] of the melt is near the surface of the glass. Sodium (Na) ions are replaced with monovalent metal ions' to form a high-refraction region as a guided wave path. 14 (the area where the underline is drawn). : Next, after removing the metal film 12 as shown in FIG. 8, as shown in FIG. 9, # the electrodes (1 5a, 15b) are used to hold the upper and lower surfaces and apply an electric field, as shown in FIG. 0: When the high-refractive region 14 is buried in the glass substrate, the gate refractive region 14 forms the optical waveguide 3 shown in FIG.}, And a large optical device 1 is formed. At this time, the optical waveguide 3 is made into a single-mode size by appropriately setting the concentration of the melt 18, the temperature, the immersion time (ion exchange time), and the application of an electric field. The optical amplifier (1, ^ and #) of the present invention shown in FIG. 1 or FIG. 3 is enlarged into a tapered optical waveguide (3b, 3b,). In order to form a ^ wave path of this shape, a metal film 12 is provided such as The above-mentioned enlargement into a tapered second opening, 13b. Otherwise, the width of the high-refractive region 14 can be enlarged into a tapered shape corresponding to 帛 2open [13 '. However, in this case, the high-refractive region is known to be 14 It is a two-dimensional (width direction) enlarged cone, forming the second optical path shown in Figure 2; elliptical enlarged optical waveguide. As shown in Figure 2 (A), in order to the light a 24 200403463

波路在厚度方向也擴大,爭林H — /、穴最好疋能調整根據第2開口 13b 之覓度所對應部份之熔融液18 /又/匕間。亦卽,甚 寬度之擴大來增長該部份之浸泊昧 灸/又/包打間的話,則亦能使高折 射區域14之深度也錐形狀地 場,使移動到玻璃基板U内部的區域施加電 1内邛的活,即能形成第2(A)圖 所示之光導波路。又,此眛,益山袖私 此枯,精由調整電極位置與施加電 壓,來使光導波路之延伸方向成直線狀。 離子交換法(其?Λ 上述方法中,係使用添加斜(Er)等稀土類元素之玻璃 基板,但該方法係使用_般玻璃,僅在製作光導波路之部 份使用離子注入方法,選擇性地添加铒 :亦即,首先,在-般之玻璃基板u,(不添加鲜等= 兀素之玻璃基板)之表面,使用光微影技術等,如第5圖 所示的形成具有導波路形狀之開口 13之金屬膜12。然後 ,在位於該開口 13内之玻璃基板n,之表面,藉由離子注 入法添加铒(Er)等稀土類元素。又,離子注入法係半導體 製程中一般所使用之技術,在真空中,將原子、分子離子 化,從數KeV加速到數MeV,來照射玻璃基板之添加方法 由於係藉由該離子注入,在位於開口 1 3之玻璃基板表 面摻雜铒(Er),因此,若在其後進行與上述離子交換法相 同之處理,亦即,進行第6圖〜第1 〇圖所示之離子交換法 處理的話,即能製造具有第丨圖、第3圖等所示之光導波 路之光放大器。 25 200403463 主·UiA法及反應性Μ子I刻法(其J ) 使用火力曰堆積法及反應性離子钱刻法也能製作上述光 放大裝置(關於此,請參照電子通信學會論文誌C — J, vol. J77-C-I,No. 5 ’ P. 214-221,1994 年)。火焰堆積法, 係將光纖製造方法之氣相軸附加法(湯法)適用於平面導 波路的方法,豸SiCl4等原料氣體流人氫氧燃燒器中,在 火焰中產生氧化反應使Si〇2微粒子等堆積成基板狀之方法 本貫施形態中,首先,如帛u圖所示,在石夕基板⑻ 土板)21之表面,藉由氫氧燃燒器28堆積形成下部包覆層 22’其次’如第12圖所示,藉由氫氧燃燒器來堆積 出摻雜了餌(Er)和磷(P)之高折射率之核心層Μ。鈇後, j電爐:將該核心層23加熱到千數百t使其透明化。其 在x核。層23上’使用光微影技術,形成對應光導 波路形狀之光阻層(對應第5圖之開σ 13形狀之光阻層), ===為光罩,使用反應性離子_法來除去曰光阻 :下:二外之核心層23。藉此’如第13圖所示, 在m旻層22上形成由核心層(對應光 所構成的導波路層24。 心小狀者) 其次’再藉由使用氫氧燃燒器28之火 部包覆層22上堆積形成上邱勺罗償无在下 將此以電爐力,其透明化:放:裝24 方法,㈣_购及(_所^便^置根據此 又’在以上所說明之各製造方法中,就使用材料而言The wave path also expands in the thickness direction. It is best that the content of the molten metal 18 / 又 // between the holes corresponding to the second opening 13b can be adjusted. Also, if the width is enlarged to increase the immersion moxibustion / thumb / panta, the depth of the high-refraction region 14 can also be a cone-shaped field, which can be applied to the area inside the glass substrate U. The internal activity of electricity 1 can form an optical waveguide as shown in Figure 2 (A). In this case, Iksan's sleeves are dry, and the extension of the optical waveguide path is made straight by adjusting the electrode position and applying a voltage. Ion exchange method (which? Λ In the above method, a glass substrate added with a rare earth element such as oblique (Er) is used, but this method uses _ ordinary glass, and only uses the ion implantation method in the part of the optical waveguide. Add 铒: that is, first, on the surface of a general glass substrate u, (without adding fresh glass = glass substrate), the use of photolithography technology, etc., as shown in Figure 5 The metal film 12 of the shape of the opening 13. Then, on the surface of the glass substrate n located in the opening 13, a rare earth element such as europium (Er) is added by an ion implantation method. In addition, the ion implantation method is generally used in semiconductor manufacturing processes. The technique used is to ionize atoms and molecules in a vacuum and accelerate them from KeV to MeV to irradiate the glass substrate. Because the ion implantation is used, the surface of the glass substrate located at the opening 13 is doped. (Er). Therefore, if the same process as the above-mentioned ion exchange method is performed thereafter, that is, the ion exchange method shown in Fig. 6 to Fig. 10, it is possible to produce 3rd Optical amplifiers with optical waveguides as shown in the figure, etc. 25 200403463 Main · UiA method and reactive M-I engraving method (its J) The above-mentioned optical amplifier device can also be manufactured using the firepower stacking method and reactive ion coin engraving method (about In this regard, please refer to the Papers of the Institute of Electronics and Communications C—J, vol. J77-CI, No. 5 'P. 214-221, 1994. The flame deposition method refers to the gas-phase axis addition method of the optical fiber manufacturing method (soup Method) A method suitable for a plane guided wave path. A method in which raw material gas such as SiCl4 flows into a hydrogen-oxygen burner, and an oxidation reaction occurs in a flame, so that Si02 fine particles and the like are deposited in a substrate form. In the first embodiment, such as As shown in the figure, the lower cladding layer 22 is formed by the hydrogen and oxygen burners 28 stacked on the surface of the Shixi substrate (the soil plate) 21, and the second coating layer is then stacked by the hydrogen and oxygen burners as shown in FIG. A high refractive index core layer M doped with bait (Er) and phosphorus (P) is obtained. After that, j electric furnace: The core layer 23 is heated to several thousand and several hundred tons to make it transparent. Its in the x-core. On the layer 23, a photoresist layer corresponding to the shape of the optical waveguide is formed using a photolithography technology (corresponding to the photoresist layer of the open σ 13 shape in FIG. 5), === is a photomask, and the reactive ion method is used to remove Said photoresist: Bottom: the outer core layer 23. Thereby, as shown in FIG. 13, a core layer (corresponding to a waveguide layer 24 made of light corresponding to a small heart-shaped layer) is formed on the m 旻 layer 22. Next, the fire part using the hydrogen-oxygen burner 28 is formed. The cladding layer 22 is stacked to form the upper Qiu spoon, Luo Qiu, and this is applied to the electric furnace, which is transparent: put: install 24 methods, ㈣_ 购 和 (_ 所 ^ 便 ^ 置 According to this and 'in the above description Materials used in each manufacturing method

26 200403463 ,除了能使用上述之玻璃外,也能使用鈮酸鋰等之結晶。 - 光放大裝置(玉4) 此光放大裝置1 〇丨(第4實施形態),如圖1 5所示,在 添加有稀土類元素之玻璃基板1〇2内部,具有進行光放大 作用之光導波路i 03,設置在光導波路丨〇3後部之光開關 部1 05 ’及用以射出被光開關部1 〇5所分配之光訊號的第1 及第2射出導波路106,107。光導波路103,具有開口於 玻璃基板102左端之入口部i〇4a,從該入口部射入 訊號光、且供應激發光(泵激光),使添加稀土類元素(例如❿ ,铒等)激發以放大訊號光。如前所述,在光導波路103内 被放大之訊號光,輸入到光開關部105,在此處被分配至 第1及第2射出導波路1〇6,1〇7,從第i及第2出口部 1〇4b,l〇4c(開口於第1及第2射出導波路1〇6,107右端厂 射出。又’此等光導波路103、第1及第2射出導波路’ 106,ι〇7之折射率、導波路寬(截面積)等,皆係被設定為 能保持單模。26 200403463 In addition to the above glass, crystals such as lithium niobate can also be used. -Optical Amplifying Device (Jade 4) This optical amplifying device 1 〇 (the fourth embodiment), as shown in FIG. 15, has a light guide for light amplifying inside a glass substrate 10 2 to which a rare earth element is added. The wave path i 03 is provided with a light switch section 1 05 ′ at the rear of the light guide wave path and the first and second output guide wave paths 106 and 107 for emitting an optical signal allocated by the light switch section 105. The optical waveguide 103 has an entrance portion 104a which is opened at the left end of the glass substrate 102. Signal light is incident from the entrance portion, and excitation light (pump laser light) is supplied to excite the addition of rare earth elements (such as ytterbium, europium, etc.) to Amplify the signal light. As described above, the signal light amplified in the optical waveguide 103 is input to the optical switch unit 105, and is distributed here to the first and second outgoing waveguides 106, 107, from the i and the first 2 exit sections 104b, 104c (open at the right end of the 1st and 2nd output waveguides 106, 107 and exit. Also, 'these optical waveguides 103, 1st and 2nd output waveguides' 106, ι The refractive index and the width of the waveguide (cross-sectional area) of 〇7 are all set to maintain the single mode.

,上述光導波路 形,形成第1 B ;第1 6圖及第1 7圖中詳細顯示光開關部丄〇 5之構成 _ 1 〇 3在光開關部The above-mentioned optical waveguide shape forms the first B; Figs. 16 and 17 show the structure of the optical switch unit 丄 05 in detail _ 1 〇 3

部1 0 5處緩慢地彎曲成u字 1開關導波路i05a。此外,第2開關導波路 ’與该第1開關導波路1 〇5a線對稱之U字形)係 導波路1 〇 5 a近接(約訊號光波長5倍之間隔)平 105b上方之玻 第1開關導波路l〇5a與第1射出導波路1〇6 開關導波路105b與第2射出導波路1〇7連接。 第1及第2開關導波路105a,, 27 200403463 璃基板2表面,設有第1及第2加熱器i〇8a,i〇8b,這些 第1及第2加熱器i〇8a,i〇8b透過控制器109連接於電源 109b。 此種構成之光開關部105,藉由第1及第2開關導波 路105a,l〇5b、與第1及第2加熱器i〇8a,i〇8b,構成使The part 105 is slowly bent into a U-shaped 1 switch waveguide i05a. In addition, the second switch waveguide 'is linearly symmetrical with the first switch waveguide 105 (U-shaped), and the waveguide 1 05a is close to (about 5 times the interval of the signal light wavelength) the first glass switch above 105b. The guided wave path 105a is connected to the first outgoing guided wave path 106. The switch guided wave path 105b is connected to the second outgoing guided wave path 107. First and second switching waveguides 105a, 27 200403463 On the surface of the glass substrate 2 are provided first and second heaters i〇8a, i〇8b. These first and second heaters i〇8a, i〇8b The controller 109 is connected to the power source 109b. The optical switch unit 105 having such a structure is configured by the first and second switch waveguides 105a, 105b, and the first and second heaters i〇8a, i〇8b.

用玻璃基板之熱光效應(丁〇)的方向性耦合器型光開關,藉 由控制器109a進行對第!及第2加熱器1〇8a,1〇讣之施 加電壓控制,進行將來自光導波路1〇3之光訊號分配至第 1及第2射出導波路1〇6,ι〇7並予以射出。Using the directional coupler type optical switch of the thermo-optic effect (but 0) of the glass substrate, the alignment is performed by the controller 109a! And applying voltage control to the second heaters 108a and 10 讣 to distribute the optical signals from the optical waveguide 103 to the first and second emission waveguides 106, 107 and emit them.

以下,說明此動作原理。在由第丨及第2開關導波與 l〇5a,l〇5b所構成之2條單模導波路近接之區域中,存名 t模之電場分布(參照第18(A)圖)及奇模之電場分布(參展 第8 (B )圖)此兩模之傳輸常數不同。因此,在光開關苟 中,當光訊號在第}及第2開關導波路i〇5a,中 傳輸時,在該兩個導波路1()5a,嶋之間周期性地產生夫 功率之移行,在奇、偶兩模式之相位差為冗之距離,光功 率100%移行。使用玻璃基板之熱光⑽效應之方向性搞合 器型光開關係利用此現象者,藉由控制施加至第i及第口〗 108a,108b之電壓,即能在〇〜1〇〇%之間任意控制 攸弟1開關導波路驗至第2開關導波路丨咖之光功率 的移行。亦即,能將來自第!及第2射出導波路1〇6, m 射出光Λ唬’從光功率之移行設定在〇%而僅從第 導波路106輸出光訊號之狀態,到屬進行光功率 而僅從第2射出導波路1G7輸出光訊號之狀態,任意的: 28 200403463 配設定。 八,尤開關部105,也可你m 7 a 、, 也T使用馬赫-齊德(Mach-The operation principle will be described below. In an area where two single-mode guided waves formed by the first and second switching guided waves and 105a and 105b are in close proximity, the electric field distribution of the named t-mode is stored (refer to Figure 18 (A)) and the odd The electric field distribution of the modes (Exhibit 8 (B)). The transmission constants of the two modes are different. Therefore, in the optical switch, when the optical signal is transmitted in the} and the second switch guide wave path i05a, the transfer of husband power is periodically generated between the two guide wave paths 1 () 5a, 嶋. In the odd and even modes, the phase difference is a redundant distance, and the optical power is 100% shifted. Those who use the directivity of the thermo-optical effect of the glass substrate to make a coupler-type light-on relationship take advantage of this phenomenon. By controlling the voltage applied to the i-th and the first port 108a, 108b, it can be between 0% and 100%. Control the transition of the optical power from the 1st switch waveguide to the 2nd switch waveguide arbitrarily. That is, can come from the first! And the second outgoing waveguide 1,06, m the output light Λbl 'is set to 0% from the transition of the optical power, and only the optical signal is output from the second waveguide 106, and the optical power is transmitted from the second outgoing waveguide only. The state of the optical signal output of the wave channel 1G7, arbitrary: 28 200403463. Eight, especially the switch unit 105, but you can also use Mach-Zid (Mach-

Zender)型開關等來取代 、电拉—^ 攻方向性耦合器型光開關。此時 ’連接在光開關部1 〇5之射 導波路係僅1條(例如,僅有 弟1射出導波路1 〇 6), 敕 曰 周正從该射出導波路所射出之光 里 又,除了熱光(T0)效庫之冰 ,聲光⑽效應。 應之外’也可㈣電光⑽效應 、其次,、針對上述構成之第4實施形態之光放大器之製 造方法,說明如下。 塍子交換法(其3) 就使用離子交換法來製造上述光放大器之方法,表昭 第19圖〜第24圖加以說明。此方法,如第19圖所示,首 先係在添加铒(Er)等稀土類元素之玻璃基板(磷酸酯玻璃 、ΒΚ7玻璃、納石灰玻璃等)111之表面,採用半導體製程 所使用之光微影技術,設置配合上述光導波路形狀之2條 開口 113,114,以圖案化形成金屬膜112。一方之開口 Π3,係由對應上述光導波路ι〇3之第1開口 η如、對應 第1開關導波路105a之第2開口 113b、及對應第1射出 V波路1 06之第3開口 113c,如圖示般從玻璃基板丨丨表 面之一端側至另一端側,一條線狀地連接延伸而形成。又 ,另一方之開口 114,係由對應第2開關導波路1〇讣之第 4開口 114b、及對應第2射出導波路1〇7之第5開口 ,一條線狀地連接延伸而形成。 29 200403463 其次,如第20圖所示,在熔融液118(將含有Ag等一 價之中性鹽加熱至熔點以上熔化而成者)中,如上述般, :圖案化形成金屬m 112之玻璃基板lu浸泡既定時間。 藉此,如第21圖所不,在曝露在熔融液丨18之開口丨13, 114部份,在接近玻璃表面,鈉⑽離子被置換為一價之 金屬離子而形成作為導波路之高折射區域115,116(晝有 陰線之區域)。其次’如第22圖所示’除去金屬膜112後 ’如第23圖所示’藉由電極U7a,㈣挾持上下兩面以 施加電場’如第24圖所示’將高折射區域115,116埋入馨 玻㈣基板ill内部的話,此高折射區域115,116即能形成 光導波路103、第1及第2開關導波路1〇5a, 1〇讣、以及 :二,第2射出導波路106, 1〇7。又,此時,係藉由適當 α又疋Ί融液118之濃度、溫度、浸泡時間(離子交換時間厂 、施加電場等,將各光導波路設定成為單模之尺寸。 < 之後’在玻璃基板111表面之第i及第2開關導波路 5a’ 1 〇5b上方,使用光微影技術,作成加熱器1 “a, l〇8b及電極,將此等加熱器108a,1〇8b從該等之電極連春 接至控制器l〇9a,進一步將控制器109a連接在電源i〇9b 的居第15圖〜第17圖所示之光放大裝f 1()1之製作即 完成。 1子交換法(装 上述方法中,係使用添加铒(Er)等稀土類元素之玻璃 基板,但該方法係使用一般之玻璃基板,僅在製作光導波 路之部份使用離子注入方法,藉此選擇性地添加铒(Er)等 30 200403463 稀土類元素。亦即,首先,在一 “卜 奴之玻璃基板111,(不添Zender) type switches, etc. to replace, electric pull- ^ directional coupler type optical switches. At this time, there is only one radio guided wave system connected to the optical switch unit 105 (for example, only the younger 1 emits the guided wave path 106). The light emitted by Zhou Zheng from the outgoing guided wave path is in addition to heat. Light (T0) effect library ice, sound and light chirp effect. In addition to the application, the electro-optic effect can be described. Second, a method for manufacturing the optical amplifier according to the fourth embodiment having the above-mentioned configuration will be described below. The raccoon exchange method (Part 3) The method for manufacturing the optical amplifier using the ion exchange method is shown in Figs. 19 to 24. This method, as shown in FIG. 19, first uses the surface of a glass substrate (phosphate glass, BKK7 glass, soda lime glass, etc.) 111 which is added with rare earth elements such as thorium (Er), and uses the light microscopy used in the semiconductor process. Shadowing technology, two openings 113, 114 are provided to match the shape of the above-mentioned optical waveguide, and a metal film 112 is formed by patterning. One of the openings Π3 is the first opening η corresponding to the above-mentioned optical waveguide ι03, the second opening 113b corresponding to the first switching waveguide 105a, and the third opening 113c corresponding to the first outgoing V-wave channel 106, such as As shown in the figure, the glass substrate is formed by connecting and extending in a line from one end side to the other end side of the surface. In addition, the other opening 114 is formed by a fourth opening 114b corresponding to the second switching waveguide 10k and a fifth opening corresponding to the second outgoing waveguide 1007 connected in a line. 29 200403463 Secondly, as shown in FIG. 20, in the melt 118 (those obtained by heating a monovalent neutral salt containing Ag and the like to a temperature above the melting point), as described above, the glass is patterned to form the metal m 112. The substrate lu is immersed for a predetermined time. As a result, as shown in Figure 21, in the openings exposed to the melt, the openings of 18, 13, and 114, near the glass surface, the sodium ions are replaced with monovalent metal ions to form a high refraction as a guided wave path. Areas 115, 116 (area with an overcast day). Next, as shown in FIG. 22, after removing the metal film 112, as shown in FIG. 23, by holding the upper and lower sides of the electrode U7a to apply an electric field, as shown in FIG. 24, the high refractive regions 115 and 116 are buried. When entering the glass substrate ill, the high-refractive regions 115 and 116 can form the optical waveguide 103, the first and second switch waveguides 105a, 10 讣, and: the second and second outgoing waveguides 106, 1〇7. At this time, each optical waveguide is set to the size of a single mode by using the appropriate concentration, temperature, and immersion time (ion exchange time plant, applied electric field, etc.) of the alpha melt solution 118. < Above the i-th and second switching waveguides 5a ′ 105b on the surface of the substrate 111, a photolithography technique is used to prepare heaters 1a, 108b and electrodes, and the heaters 108a and 108b are removed from The electrode of Lianchun was connected to the controller 109a, and the controller 109a was further connected to the power source i09b. The optical amplifier f 1 () 1 shown in Figures 15 to 17 is completed. Sub-exchange method 30 200403463 rare earth elements such as erbium (Er) are added. That is, first, a glass substrate 111

加铒寺稀土類元素之玻璃基板) 你田L ,Μ 奴J表面,使用光微影技術等 如弟 19圖所示,形成呈古道、上 形成具有導波路形狀之開口 113,114 之金屬膜11 2。且在位於該開口 n ^ i13,U4内之玻璃基板 丄丄丄之表面’精由離子注入古、土 一主 方法’來摻雜铒(Er)等稀土類 70 素。 、 由於係藉由該離子注入,在 ' 甘上 位於開口 113, 114之玻璃 基板表面摻雜铒(Er),因此,芒*计^ ^, π , 右在其後進行與上述離子交 =法相同之處理’亦即’進行第2G圖〜第24圖所示之離 子父換法處理的話,即能形成上述光導波路。㈣,若在 玻璃基板111 ’之表面之第1及第 弟2開關導波路105a,105b 上方,使用光微影技術作成力σ埶哭 t …、口口 iU8a, 108b及電極,連 接控制器109a及電源i〇9b的話,則笛κ m 一 ]冶則弟15圖〜第17圖所 示之光放大裝置101之製作便完成。 太弟堆積法及反應忖 使用火焰堆積法及反應性離子敍刻法也能製作上述光 放大裝置。本實施形態中,首先,如帛25圖所示,在矽 基板(S i基板)1 21之表面以氫氧m在 4虱燃燒為128堆積形成下部 包覆層122,其次,如第25圖所干,益山〆〆 厅不精由氫氧燃燒器28, 來堆積摻雜铒(Er)與蝴之高折射率之核心層123。然後 ,在電爐中,將該核心I 23加熱到千數百。C,使皇透明 化:其次,在該核心層1231,使用光微影技術,形成對Glass substrates of Rare Earth elements in Kazan Temple) The surface of you Tian L, M Nu J, using photolithography technology, etc., as shown in Figure 19, forming a metal film with an ancient path and an opening 113, 114 with a waveguide shape. 11 2. And on the surface of the glass substrate 丄 丄 丄 located in the opening n ^ i13, U4, the rare earth 70 element such as erbium (Er) is doped with the main method of ion implantation in ancient and soil. Since the surface of the glass substrate at the openings 113 and 114 is doped with erbium (Er) by the ion implantation, therefore, the manganese is calculated as ^ ^, π, and right after that, the ion-interaction method is performed. When the same process is performed, that is, when the ion parent conversion method shown in FIG. 2G to FIG. 24 is performed, the above-mentioned optical waveguide can be formed. That is, if the first and second switch waveguides 105a, 105b on the surface of the glass substrate 111 'are formed using the photolithography technology to create a force σ 埶 weet t, mouth iU8a, 108b, and electrodes, and connect the controller 109a With the power source i09b, the production of the optical amplifying device 101 shown in Fig. 15 to Fig. 17 is completed. Brother stacking method and reaction 上述 The above-mentioned optical amplifying device can also be manufactured by flame stacking method and reactive ion engraving method. In this embodiment, first, as shown in FIG. 25, the lower cladding layer 122 is formed by stacking the surface of the silicon substrate (S i substrate) 1 21 with hydrogen and oxygen at 4 lice burning to 128, and secondly, as shown in FIG. 25 Therefore, the Yishan Luan Hall does not use the oxyhydrogen burner 28 to deposit a high refractive index core layer 123 doped with Er (Er) and butterfly. Then, the core I 23 was heated to several hundreds of hundreds in an electric furnace. C, make the emperor transparent: Secondly, in the core layer 1231, using photolithography technology,

應光導波路之形狀的光阻層(對雁笼〗Q 曰V対應弟19圖之2個開口 113, 11 4形狀之光阻層),將該光阻層作為 嚐忭马先罩,藉由反應性離 31 200403463 子蝕刻法’除去光阻層所覆蓋部份以外之核心 1 123。藉 此’如第27 ®所示’在下部包覆層122上’形成由光導^ 路1〇3、第i及第2開關導波路1〇5&,祕、以及 1及2之射出導波路1〇6,m之形狀之核心層所構成的2 條導波路層124,125。 其次’再藉由使用氫氧燃燒器128之火焰堆積法,在 下部包覆㉟122上堆積形成上部包覆層126(第28圖)以覆 蓋2個導波路層124, 125,,將此以電爐加熱予以透明化 的話三即能形成上述光導波路 '然後,在玻璃基板⑴表 面之第1及第2開關導波路1〇5a,1〇5b上方,使用光微影 技術,作成加熱器108a,1〇8b及電極,連接至控制器 10 9a及電源i〇9b的古壬,错,r ^ ^ U扣的活’弟15圖〜第17圖所示之光放大 裝置101之製作便完成。 又,以上所說明之各製造方法中’就材料而言’除了 能使用上述之玻璃$々k h 敬舆之外,也能使用鈮酸鋰等之結晶。 大裝 第29圖,係顯示本發明之第5實施形態之光放大裝置 立/、係在添加餌(Er)等稀土類元素之玻璃基板202之内 邛,具有從左端面(入口側端面)2〇2a延伸至右端面(出口 :端面)襲的光放大導波路203, 204, 2〇5。第3◦圖及 二1圖係顯不沿著該光放大裝置201之箭頭β— β及C C之截面,由這些圖可知,光放大導波路係由一條入口 側導波路203(從位於入口側端面之入口部2咖延伸 ]中間邛2〇7)、與2條分歧導波路204,205(在中間部 32 200403463 207,從入口侧導波路203分歧朝出口側端面202b延伸)所 構成。分歧導波路204,205係在出口側端面202b處開口 ,而形成出口部204a,205a。此等入口側導波路203、分 歧導波路204,205皆具有能保持單模之尺寸(截面形狀)。 s使用此光放大裝置2 01進行光放大時,訊號光與激 發光係從入口部203a射入入口側導波路203内,藉此,藉 由激發光來激發所添加之稀土類元素,據以就稀土類元素 之外殼電子之能階形成反轉分布,而放大訊號光。該訊號A photoresist layer that conforms to the shape of the light guide wave path (to the goose cage), Q said V 対 Yingdi 19, two openings 113, 11 4 shape photoresist layer. Use this photoresist layer as a mask for Reactive ion 31 200403463 sub-etching method 'removes the core 1 123 except the part covered by the photoresist layer. Thereby, as shown in the "27th ®" on the lower cladding layer 122, the outgoing waveguides are formed by the optical waveguides 103, the i-th and second switching waveguides 105, and 1 and 2. The core layer with a shape of 106, m is composed of two waveguide layers 124, 125. Secondly, the upper cladding layer 126 (Fig. 28) is deposited on the lower cladding layer 122 by the flame stacking method using the hydrogen-oxygen burner 128 to cover the two waveguide layers 124 and 125. If the heating is made transparent, the above-mentioned optical waveguide can be formed. Then, on the first and second switching waveguides 105a and 105b on the surface of the glass substrate, the photolithography technology is used to create a heater 108a, 1 〇8b and the electrode, Gu Ren connected to the controller 10 9a and the power source 〇9b, wrong, r ^ ^ U buckle live 'brother' Figure 15 ~ Figure 17 completed the production of the optical amplifier 101. In addition, in each of the manufacturing methods described above, "in terms of materials", in addition to the above-mentioned glass, it is also possible to use crystals such as lithium niobate. Figure 29 is a large-size diagram showing a light magnifying device of a fifth embodiment of the present invention, which is located inside a glass substrate 202 to which a rare earth element such as bait (Er) is added, and has a left end surface (inlet-side end surface). 202a extends to the right end surface (exit: end surface) of the optical amplification waveguide 203, 204, and 205. Figures 3 and 2 and 1 show the cross-sections along the arrows β-β and CC of the optical amplifier 201. From these figures, it can be seen that the optical amplification waveguide system consists of an entrance-side waveguide 203 (from the entrance side). The entrance part of the end face is extended from the middle part to the middle part 207), and two branched waveguides 204 and 205 (in the middle part 32 200403463 207, branching from the inlet-side waveguide 203 and extending toward the outlet-side end face 202b). The branched waveguides 204 and 205 are opened at the exit-side end surface 202b to form the exit portions 204a and 205a. These entrance-side waveguides 203 and the divided-diffused waveguides 204 and 205 each have a size (cross-sectional shape) capable of maintaining a single mode. s When using this optical amplifying device 2 01 to perform optical amplification, the signal light and the excitation light are incident from the entrance portion 203a into the entrance-side waveguide 203, whereby the added rare-earth element is excited by the excitation light. The energy level of the shell electrons of the rare earth element forms an inverted distribution, and the signal light is amplified. The signal

光之放大係在入口側導波路203及分歧導波路2〇4,205内 進行,但此時,由於放大光之峰值功率變高的話會引起受 激拉曼散射(SRS),故峰值功率不成為受激拉曼散射之臨界 值(pG)以上。但是,在本實施形態之光放大裝置2〇ι中, 由於入口側導波路203分歧為2條分歧導波路2〇4, 2〇5, 故在各分歧導波路204, 205中,峰值功率之最大值有可能 成為上述臨界值(PG)之光放大,因此若將從兩分歧導波路 2〇4, m之出π部驗,2G5a射出之光訊號予以合波的The amplification of light is performed in the entrance-side waveguide 203 and the branched waveguides 204, 205. However, at this time, the peak power of the amplified light will cause stimulated Raman scattering (SRS), so the peak power will not change. It is above the critical value (pG) of stimulated Raman scattering. However, in the optical amplifying device 200m of this embodiment, the entrance-side waveguide 203 is branched into two branched waveguides 204, 205. Therefore, in each of the branched waveguides 204, 205, the peak power The maximum value may become the optical amplification of the above-mentioned critical value (PG). Therefore, if the π part from the two divergent waveguides 204, m is examined, the light signal emitted by 2G5a will be multiplexed.

=則與僅由單一光導波路構成之情形相冑,能將光訊號 放大到二倍功率。 文大器1製造方法 其次,針對上述構成之第5實施形態之光放大器 造方法,說明如下。 離子交換K其5) 將上述光放大裝置201之製造方法 明。此製造方法稱為離子交程^^μ單說 八I私依序顯示於第32= Contrary to the case of only a single optical waveguide, it can amplify the optical signal to twice the power. Manufacturing method of the main unit 1 Next, a manufacturing method of the optical amplifier according to the fifth embodiment having the above-mentioned configuration will be described below. Ion exchange 5) 5) The method for manufacturing the optical amplifier 201 will be described. This manufacturing method is called ion exchange process ^^ μ

33 200403463 Θ 弟3 7圖。首先’該方法係如第3 2圖所示,在添加斜 (Er)等稀土類元素之玻璃基板(磷酸酯玻璃、βΚ7玻璃、鈉 石灰玻璃等)211表面,採用半導體製程所使用之光微影技 術,設置配合導波路形狀之開口 213a〜213c,以圖案化形 成金屬膜212。由第32圖之形狀可瞭解,該開口以%〜 213c係對應上述入口光導波路2〇3及分歧導波路2〇4,別已 之形狀。 ^ 其次,如第33圖所示,在熔融液218(將含有Ag等一 價離子之中性鹽加熱至炫點以上熔化而成)中,如上述般 ,制案化形成金屬膜212之玻璃基板211浸泡既定時: 。猎此,如第34圖所示,曝露在熔融液218之開口 2丨知 213c之。卩伤,在罪近玻璃表面,鈉(以)離子被置換為一 價之金屬離子而形成作為莫、由 一 ' 〜风邗馮導波路之咼折射區域2ih〜 215c(晝有陰線之區域,因區域ma之截面位置不同,故 未圖示)。其次,如第35圖所示般除去金屬膜212後,如 第36圖所示,藉由電極217 “7b來挾持上下兩面以施 加電場’如第3 7圖所千,從古』〆人 ^所不將兩折射區域215a〜215c埋入 玻璃基板211内部的話,即能萝 月匕表作弟29圖所示之光放大罗 置2 01。又,此時,传葬由、裔A 、 糸糟由適§设定熔融液218之濃度、 >皿度、次日守間(離子交換日丰門) 丁又換4間)、施加電場等,將 203,204,205製成為單模之尺寸。 導皮路 又’製造光放大裝置2〇1之太土 ^ ? … 之方法,不受限於上述方法 ,也可只在製作光導波路之部 优用離子注入方法,難 此選擇性添加铒(Er)等稀土 4 + & 糟 筛類凡素來加以製造,X,也可 34 200403463 使用火堆積法及反應性離子蝕刻法來加以製造。 6) 第38圖,係顯不本發明之第6實施形態之光放大裝置 /、係在添加铒(Er)等稀土類元素之玻璃基板内部 山/、有仗左缟面(入口側端面)321a延伸至右端面(出口側 端面)321b的光放大導波路322〜325。此光放大裝置320 中^光放大導波路係由_條人口側導波路順從位於入口 '端面321a之入口部322a延伸到第1中間部327)、2條 刀歧導波路323’ 324(在第!中間部327a處,從入口側導 、路322刀歧延伸向出口側端面32ι)、及出口側導波路 325(上述分歧導波路323324在第2中間部327b匯合,延 伸到出口側端φ 321b)所構成,出口側導波路325在出口 側端面321處開口而形成出 . ⑽、分歧導波路323 32H 此4入口側導波路 ,324及出口側導波路325,皆具有· 能保持單模之尺寸(截面形狀)。 ::用該光放大…20來進行光放大時,訊號光與 二“入°部322a射入入口側導波路322内,藉由激發 光來激叙所添加之稀土類元辛 光之放大,係在入口側導波路3以八,^ 仁在该光放大裝置320中 、,在入口側導波路322及出口側導波路325之間,因分歧 為2條分歧導波路323,324 中,峰值功率之最大值可能成二波路323, 324 ,因此從出口側導波路325之出\上=界值(p。)之光放大 W 325a射出之光訊號與 35 200403463 由單一之光導波路所構成之情形相較,能將光訊號放大到 二倍功率。 光放大裝詈ί其7) 第39目,係顯示本發明第7實施形態之光放大裝置 330,其具有玻璃基板33卜該破璃基板331係接合第i玻 璃基板33卜1(由-般之玻璃,亦即,不添加斜等稀土類元 素之玻璃所構成)、與第2玻璃基板331—2(由添加解等稀 土類元素之玻璃所構成)而構成。此外,於第1玻璃基板 331 1之内#,δ又有訊说光導波路(由從左端面(入口側端 面)331a延伸之入口側訊號光導波路332、及在中間部 處從入口側訊號光導波路332分歧為二延伸之第丨及第2 訊號光分歧導波路333a,334a所構成)、與第i及第2激 發光導波路336a,336b,第1訊號光分歧導波路333a與-第1激發光導波路336a以第1分波多工器(WDM)338a加以· 合流,第2訊號光分歧導波路334a與第2激發光導波路 336b則以第2分波多工器(WDM)338b加以合流。又,在第 2玻璃基板331-2内,形成有以第1及第2分波多工器 338a,338b加以合波之光所通過之第1及第2分歧放大導 波路 333b,334b。 當使用該光放大裝置330來進行光放大時,訊號光射· 入入口側訊號光導波路322内,且激發光射入第i及第2 - 激智光導波路3 3 6 a,3 3 6 b。如此一來,從入口側訊號光導 波路332進入第1訊號光分歧導波路333a之訊號光與射入 弟1激發光導波路3 3 6 a之激發光,藉由第1分波多工哭 36 200403463 (WDM)338a來加以合波’然後射入第1分歧放大導波路 333b ,、、.Ό果在第1为歧放大導波路333b内,藉由激發 光激發所添加之稀土類元素,使訊號光放大,從右端面 331c開口之出口部333c射出。同樣地,從入口側訊號光 導波路332進入第2訊號光分歧導波路334a之訊號光與射 入第2激發光導波路336b之激發光,藉由第2分波多工器 (WDM)338b來加以合波,然後射入第2分歧放大導波路 334b,在第2分歧放大導波路334b内,使訊號光放大,從 右端面331c開口之出口部334c射出。 如前所述,射入入口側訊號光導波路322之訊號光之 放大,係在第1及第2分歧放大導波路333b,、334b内分 別進行,故在各分歧放大導波路333b,334b中,可進行峰 值功率之最大值為上述臨界值(Pg)般的光放大,將從兩出-口部333c,334c射出之光訊號加以合波的話,與藉由單一· 光放大導波路所構成之光放大之情形相較,能將光訊號放 大到二倍功率。 光放大裝置(其8) 第12圖,係顯示本發明第8實施形態之光放大裝置 340其具有玻璃基板341 ’該玻璃基板341係接合第1玻 璃基板341-1(由一般之玻璃構成)、與第2玻璃基板341_ 2 (由添加铒等稀土類元素之玻璃構成)而構成。此外,於第 1玻璃基板341-1内部,設有訊號光導波路(由從左端面( 入口側端面)3 41 a延伸之入口側訊號光導波路3 4 2、及在第 1中間部347a處從入口側訊號光導波路342分歧為二延伸 37 200403463 之第1及第2訊號光分歧導波路343a,344a所構成)、與 第1及第2激發光導波路346a,346b,第1訊號光分歧導 波路343a與第1激發光導波路346a係以第i分波多工器 (WDM)348a來加以合波,第2訊號光分歧導波路344&與第 2,放淼光導波路346b則係以第2分波多工器(WDM)348b枣 加以口波。又,在第2玻璃基板341-2中,形成有以第1 及第2为波多工器348a,348b加以合波之光所通過之第j 及第2分歧放大導波路343b, 34仆、與該等分歧放大導波 路343b,344b在第2中間部347b合流延伸至出口側端面_ 341b之出口側導波路345,出口側導波路345係在出口側 端面341b處開口而形成出口部345a。 當使用該光放大裝置340來進行光放大時,訊號光射 入入口侧汛唬光導波路342内,且激發光射入第丄及第2 激發光導波路346a,346b。如此一來,從入口側訊號光導“ 波路342進人f i訊號光分歧導波路343a之訊號光與射入 第1激發光導波路346a之激發光,藉由第i分波多工器 (WDM)348a來加以合波,然後射入第i分歧放大導波路 _ 343b。同樣地,從入口側訊號光導波路342進入第2訊號 光分歧導波路344a之訊號光與射入第2激發光導波路 346b之激發光,藉由第2分波多工器(WDM)348b來加以合 波,然後射入第2分歧放大導波路344b,其結果,在第工· 及第2分歧放大導波路343b,33处内,使訊號光分別放大 ,且在合波後通過出口側導波路345該出口部345a射出。 如w所述,射入入口側訊號光導波路342之訊號光之33 200403463 Θ Brother 3 7 Figure. First, as shown in Figure 32, this method uses the light microscopy used in the semiconductor process on the surface of a glass substrate (phosphate glass, βκ7 glass, soda lime glass, etc.) 211 with rare earth elements such as oblique (Er) added. Shadow technology, the openings 213a to 213c are provided to match the shape of the waveguide to form a metal film 212 by patterning. As can be understood from the shape of Fig. 32, the openings correspond to the above-mentioned entrance optical waveguides 203 and divergent waveguides 203 in% to 213c, which are unique shapes. ^ Secondly, as shown in FIG. 33, in a molten liquid 218 (made by heating a neutral salt containing a monovalent ion such as Ag to melt above the dazzling point), as described above, the glass is formed into a metal film 212. The substrate 211 is immersed at a fixed timing:. In this regard, as shown in FIG. 34, the opening 2 exposed to the melt 218 is known as 213c. Sting, on the surface of sin near the glass, sodium (to) ions are replaced with monovalent metal ions to form as a Mo, refracted area 2ih ~ 215c (the area with a negative line during the day, Because the cross-sectional position of the area ma is different, it is not shown). Secondly, after removing the metal film 212 as shown in FIG. 35, as shown in FIG. 36, the upper and lower surfaces are held by electrodes 217 "7b to apply an electric field." Therefore, if the birefringent regions 215a to 215c are not embedded in the glass substrate 211, the light can be enlarged and placed as shown in the figure 29. Also, at this time, the burial cause, family A, and 糸The concentration of the molten liquid 218, the degree of the dish, the temperature of the next day (Ion exchange Nihonmon gate, and another 4 rooms), the application of an electric field, etc. are used to make 203, 204, and 205 into a single mode. Dimensions. The method of manufacturing the optical waveguide device is not limited to the above method, and the ion implantation method can be used only in the part where the optical waveguide is manufactured. It is difficult to add it selectively. Rare earths such as erbium (Er) and sieves are used to produce them, and X can also be produced by the fire deposition method and reactive ion etching method. 34) Figure 38 shows the present invention. The optical amplifying device of the sixth embodiment is mounted on the inside of a glass substrate to which a rare earth element such as thorium (Er) is added. / 、 The light amplification waveguides 322 ~ 325 extending from the left side (inlet-side end face) 321a to the right end surface (outlet-side end face) 321b. The light-amplified waveguides in this optical amplification device 320 are guided by _ population side The wave path extends from the entrance part 322a at the entrance 'end surface 321a to the first intermediate part 327), and two knife divergent wave paths 323' 324 (at the first! Intermediate part 327a, from the entrance side guide, the path 322 knife diverges to the exit The side end surface 32m) and the exit side waveguide 325 (the branched waveguide 323324 merges at the second intermediate portion 327b and extends to the exit side end φ 321b). The exit side waveguide 325 is opened at the exit side end surface 321 Out. ⑽, bifurcated waveguide 323 32H The 4 entrance-side waveguides, 324 and exit-side waveguides 325 all have the size (cross-sectional shape) that can maintain a single mode. :: Use this light amplification ... 20 for optical amplification At the time, the signal light and the two-in-degree portion 322a are incident into the entrance-side guide wave path 322, and the amplification of the added rare-earth element Xinguang is excited by the excitation light. In this optical amplifying device 320, an entrance-side waveguide 322 is provided. Between the exit-side guides 325, the two peaks may be two-way 323, 324 due to the divergence into two diverging-paths 323, 324. Therefore, the exit from the exit-side guides 325 \ up = limit value (p Compared with the case where 35 200403463 is composed of a single optical waveguide, the optical signal emitted by W 325a can amplify the optical signal to twice the power. (7) Item 39 of the optical amplifying device is a light amplifying device 330 according to a seventh embodiment of the present invention, which has a glass substrate 33. The broken glass substrate 331 is connected to the i-th glass substrate 33 (1). Glass, that is, glass made of rare earth elements such as obliquely added), and second glass substrate 331-2 (made of glass added with rare earth elements such as solution). In addition, within the first glass substrate 331 1 #, δ also has an optical waveguide (from the entrance-side signal optical waveguide 332 extending from the left end surface (the entrance-side end surface) 331a) and the entrance-side signal optical waveguide at the middle portion. Wave path 332 is divided into two extensions of the first and second signal optical divergent waveguides 333a, 334a), and the i and second excitation optical waveguides 336a, 336b, and the first signal optical divergent waveguide 333a and -1 excitation The optical waveguide 336a is merged by the first demultiplexer (WDM) 338a, and the second signal optical divergent waveguide 334a and the second excitation optical waveguide 336b are merged by the second demultiplexer (WDM) 338b. Further, in the second glass substrate 331-2, first and second branched amplification waveguides 333b and 334b through which the light multiplexed by the first and second demultiplexers 338a and 338b pass are formed. When the optical amplifying device 330 is used for optical amplification, the signal light enters and enters the entrance-side signal optical waveguide 322, and the excitation light enters the i-th and the second-excitation optical waveguides 3 3 6 a, 3 3 6 b . In this way, the signal light from the entrance-side signal optical waveguide 332 into the first signal optical divergent waveguide 333a and the excitation light incident on the first excitation optical waveguide 3 3 6 a are weeped by the first multiplexing 36 200403463 ( WDM) 338a to combine the waves, and then enter the first branched amplified waveguide 333b, .... In the first branched amplified waveguide 333b, the rare earth element added by the excitation light excites the signal light. It is enlarged, and exits from the exit part 333c which the right end surface 331c opened. Similarly, the signal light entering the second signal optical branching waveguide 334a from the entrance-side signal optical waveguide 332 and the excitation light entering the second excitation optical waveguide 336b are combined by a second wavelength multiplexer (WDM) 338b. The wave then enters the second branched amplified waveguide 334b, amplifies the signal light in the second branched amplified waveguide 334b, and exits from the exit portion 334c of the right end surface 331c. As described above, the amplification of the signal light that is incident on the entrance-side signal optical waveguide 322 is performed in the first and second branched amplification waveguides 333b, 334b. Therefore, in each of the branched amplification waveguides 333b, 334b, It can perform optical amplification with the maximum peak power being the above-mentioned critical value (Pg). When the optical signals emitted from the two exit-ports 333c and 334c are combined, it can be combined with a single optical amplification waveguide. Compared with the optical amplification, the optical signal can be amplified to twice the power. Optical Amplifying Device (No. 8) FIG. 12 shows a light amplifying device 340 according to an eighth embodiment of the present invention, which has a glass substrate 341. The glass substrate 341 is a first glass substrate 341-1 (composed of ordinary glass). And a second glass substrate 341_ 2 (consisting of a glass added with a rare earth element such as thorium). In addition, inside the first glass substrate 341-1, a signal optical waveguide (from the left end surface (entering end surface) 3 41a) is provided at the entrance-side signal optical waveguide 3 4 2 and at the first intermediate portion 347a. The entrance-side signal optical waveguide 342 is divided into two extensions 37 200403463 (consisting of the first and second signal optical waveguides 343a, 344a), and the first and second excitation optical waveguides 346a, 346b, and the first signal optical divergent waveguide 343a and the first excited optical waveguide 346a are combined by the i-th multiplexer (WDM) 348a, and the second signal optical divergent waveguide 344 & and the second and the second optical waveguide 346b are connected by the second demultiplex Worker (WDM) 348b dates. Further, the second glass substrate 341-2 is formed with j and second branched amplification waveguides 343b, 34 which are multiplexed by the first and second wave multiplexers 348a, 348b and multiplexed light, and The divergent amplified waveguides 343b and 344b merge at the second intermediate portion 347b and extend to the exit-side waveguide 345 of the exit-side end surface _341b. The exit-side waveguide 345 is opened at the exit-side end surface 341b to form the exit portion 345a. When the optical amplifying device 340 is used for optical amplification, the signal light enters the entrance-side flood optical waveguide 342, and the excitation light enters the first and second excitation optical waveguides 346a and 346b. In this way, the signal light from the entrance-side signal light guide "wave path 342 enters the fi signal light divergent waveguide 343a and the excitation light that enters the first excitation light waveguide 346a is transmitted by the i-th multiplexer (WDM) 348a. Combine them, and then enter the i-th branched amplified waveguide _343b. Similarly, the signal light from the entrance-side signal optical waveguide 342 into the second-signal optical branched waveguide 344a and the excitation light that enters the second excited-light waveguide 346b. The wave is multiplexed by the second division multiplexer (WDM) 348b, and is then injected into the second branched amplified waveguide 344b. As a result, within the first and second branched amplified waveguides 343b and 33, The signal light is amplified separately and exits through the exit side guide 345 and the exit portion 345a after being combined. As described in w, the signal light entering the entrance side signal light guide 342

38 放大,係在第1及第2分 進行, 支放大導波路343b,344b内分別 進订因通過出口側導浊玖Q J亡 ο,., 射出,故在各分歧放大導 波路343b,344b中,可谁并處处 wrp . ^ 丁峰值功率之最大值成為上述臨 界值(P〇)之光放大,將從出口 單一朵淤士道 345a射出之光訊號與藉由 早九放大導波路所構成之氺访丄 ψ ^ . 51 先放大之情形相較,能將光訊 就放大到二倍功率。 · 又,針對上述第7及第s杳a ^ 哭,你田# 及弟8貫施形態所使用之分波多工 口口 使用第41圖加以說明。卜卢 淹彡I ^枝 此處,使用符號220來表示分 波夕工如之構成例,如圖所示, 漸接近後’合流成u,再分歧V、2Vt#導波路逐 第41(A)圖所示,第i ,,、、條之構成。亦即,如 接、斤乂紅人* 弟2入口測導波路221,222逐漸 路22S州 馬“灸”岐為第1及第2出口側導波 ,,在耦合部(區域)225成為存+ # 兩個模的構造(參照第4 子在偶拉及可核之· 常f )圖)。由於此等兩個模之傳輸 周期性地變化。面干涉叙合部挪―面傳輸,光功率 因::若設定耦合# 225之長度使奇偶兩 ^、,,、 則先係射出至與射入之導波路相反 侧之導波路。例如, 射入弟1入口側導波路221之光,係 射出至第2出口側導波路^ 相反的,若設定耦合部225 之長度以使可偶兩模之相位差成為…數倍的話,則光- 係射出至與射入之導、& 、 d皮路相冋之導波路。例如,射 入口側導波路221夕出 及u , 之先’係射出至第1出口側導波路223 39 200403463 此處,由於傳輪當數亦合同、由且 f铷㊉数力曰因波長而不同,因此若設定 搞合部225之長度,以使訊號光波長之奇偶兩模之相位差 成為;τ之偶數倍,使激發光波長之奇偶兩模之相位差成為 7Γ之奇數倍的則訊號光射出至同—側之導波路,激發 光射出至相反側之導波路。因此,例h,若將激發光射入 第1入口側導波路22卜將訊號光射入第2入口側導波路 222的話’則激發光及訊號光同時在第2出口側導波路似 射出,兩者將進行合波。又,,若激發光及訊號光同 時射入第1入口側導波@ 221的話,則訊號光射出至第) 出口侧導波路223,激發光射出至第2出口側導波路m, 兩者將會被分波。38 Amplification is performed in the first and second points. The branched guided wave paths 343b and 344b are respectively ordered because they exit through the exit side guide turbidity 亡 QJ, and are ejected. Therefore, they are in the divergent amplified guided wave paths 343b and 344b. , Who can be everywhere wrp. ^ The maximum value of the peak power of D is the light amplification of the above-mentioned critical value (P0). The light signal emitted from the exit of a single silt road 345a is formed by the early nine-amplified guided wave path.氺 氺 氺 ^. 51 Compared with the case of first enlarging, the optical signal can be amplified to twice the power. · Regarding the 7th and s 杳 a ^ cry mentioned above, the sub-wave multiplexing port used by your field # and the 8th embodiment is described using FIG. 41. Blooming I ^ Here, the symbol 220 is used to represent an example of the configuration of the split-wave evening operation. As shown in the figure, after approaching, 'converge to u, and then divide the V, 2Vt # guided wave path 41st (A ) As shown in the figure, the composition of the i, ,, and bar. In other words, if you pick up and pick up a red person, the second brother will measure the guided waves at the entrance 221, 222, and gradually go to 22S. The "moxibustion" of the horse in the state will be the first and second exit side guided waves, and will be stored in the coupling section (area) 225. + # The structure of the two modules (refer to the figure of the 4th child in the even and verifiable constant f)). Since the transmission of these two modes changes periodically. The surface interference interference unit moves in the area, and the optical power is due to: If the length of the coupling # 225 is set so that the parity is even, ^, ,,, will be emitted to the opposite side of the guided wave path. For example, the light entering the waveguide 1 on the entrance side of Brother 1 is emitted to the second waveguide on the exit side ^ Conversely, if the length of the coupling portion 225 is set so that the phase difference between the even and two modes becomes… several times, then Light-is a guided wave path that exits to the incident guide, & d. For example, the entrance-side guided wave path 221 and the u are first emitted to the first exit-side guided wave path 223 39 200403463. Here, because the number of transfers is also contracted, and the number f is due to the wavelength. It is different. Therefore, if the length of the coupling portion 225 is set so that the phase difference between the odd and even modes of the signal light wavelength becomes; an even multiple of τ and the phase difference between the odd and even modes of the excitation light wavelength becomes an odd multiple of 7Γ. Signal light is emitted to the same side of the waveguide, and excitation light is emitted to the opposite side of the waveguide. Therefore, in Example h, if the excitation light is incident on the first entrance side waveguide 22 and the signal light is incident on the second entrance side waveguide 222, then the excitation light and the signal light are emitted simultaneously on the second exit side waveguide, The two will be combined. In addition, if the excitation light and the signal light enter the first entrance-side guided wave @ 221 at the same time, the signal light exits to the second exit-side guided wave path 223, and the excitation light exits to the second exit-side guided wave path m. Will be split.

光放大裝豎(其W 第42圖,係顯示本發明第9實施形態之光放大裝置 401-1,具有玻璃基板,其係將中央玻璃基板4〇2(由添加 铒等稀土類元素之玻璃基板所構成)設定在中央,在左右 接合左右玻璃基板404, 407(即,由一般之基板所構成, 亦即,由不添加铒等稀土類元素之玻璃所構成)來構成。 在中央玻璃基板402之内部,設置有從左接合面(與左玻璃 基板404之接合面)402a到右接合面(與右玻璃基板ίο?之 接合面)402延伸之光放大導波路403。此光放大導波路 4 0 3,由第4 3圖(係顯示沿第4 2圖之箭頭d — D之截面)可 知,係由中央玻璃基板402之内部所形成之截面圓形狀之 光折射區域所構成。 200403463 在左玻璃基板404中,設有從該左端面404a延伸之第 1激發光導波路405a及第1訊號光導波路405b,此等導波 路40 5a,405b係以第1分波多工器406來合流,與光放大 導波路403連接。在右玻璃基板407中,設有第2分波多 工器408(其係連接在光放大導波路403)、及從該第2分波 多工器408分歧延伸之第2激發光導波路409a及第2訊號 光導波路409b,此等導波路409a,409b係在右玻璃基板 4〇7之右端面407a開口。又,在右玻璃基板407之右端面 4〇7a之第2激發光導波路409a開口部份,設有用來使通 籲 過該開口之光正反射之光學反射鏡41 〇。 當使用這種構成之光放大裝置401-1來進行訊號光之 放大時,激發光射入第i激發光導波路405a,將成為放大 對象之訊號光射入第1訊號光導波路4〇5b。此等激發光及 訊號光,係藉由第1分波多工器406來進行合波而被導引_ 到光放大導波路403内。藉此,在光放大導波路403内, 藉由激發光來激發所添加之稀土類元素之元素,藉此就稀 土類元素之外殼電子之能階,形成反轉分布,來放大訊號春 光。以此方式,所放大之訊號光與激發光,從光放大導波 路403被第2分波多工器408分離為訊號光與激發光,激 ♦光射出至第2激發光導波路409a,所放大之訊號光則射· 出至弟2訊號光導波路409b。 ‘ 此處,第2激發光導波路409a之出口部係與配設在右 基板407之右端面407a之光學反射鏡410對向,射出至第 2激發光導波路4〇9a之激發光被光學反射鏡41()反射,再Light amplification device (W, FIG. 42) is a light amplification device 401-1 showing a ninth embodiment of the present invention. The light amplification device 401-1 has a glass substrate, and the central glass substrate 40 (a glass containing rare earth elements such as thorium is added) The substrate is set at the center, and the left and right glass substrates 404 and 407 are bonded to the left and right (that is, made of a general substrate, that is, made of glass that does not add rare earth elements such as thorium). The center glass substrate Inside 402, a light amplification waveguide 403 extending from the left bonding surface (the bonding surface with the left glass substrate 404) 402a to the right bonding surface (the bonding surface with the right glass substrate ο) is provided 402. This optical amplification waveguide 4 0 3, as shown in Figure 43 (showing the section along arrow d-D of Figure 42), is composed of a light-refracting region with a circular cross-section formed inside the central glass substrate 402. 200403463 in The left glass substrate 404 is provided with a first excitation optical waveguide 405a and a first signal optical waveguide 405b extending from the left end surface 404a. These waveguides 405a and 405b are merged by a first demultiplexer 406 and Optical amplification guided wave path 403 The right glass substrate 407 is provided with a second demultiplexer 408 (which is connected to the optical amplification waveguide 403), and a second excitation optical waveguide 409a and a branch extension from the second demultiplexer 408. The second signal optical waveguide 409b, these waveguides 409a, 409b are opened at the right end surface 407a of the right glass substrate 407. Also, the second excitation optical waveguide 409a opening is formed at the right end surface 407a of the right glass substrate 407. An optical mirror 41 is provided for regular reflection of the light passing through the opening. When the optical amplifying device 401-1 of this structure is used to amplify the signal light, the excitation light is incident on the i-th excitation light guide path. 405a, the signal light to be amplified is incident on the first signal light guide wave path 405b. These excitation light and signal light are guided by the first demultiplexing multiplexer 406 to be multiplexed to the optical amplification In the guided wave path 403. In this way, in the optical amplification guided wave path 403, the added rare-earth element elements are excited by excitation light, thereby forming an inverted distribution of the energy levels of the shell electrons of the rare-earth elements. Zoom in on the signal spring. In this way, the The signal light and the excitation light are separated from the optical amplification waveguide 403 by the second division multiplexer 408 into the signal light and the excitation light, and the excitation light is emitted to the second excitation light guide 409a, and the amplified signal light is emitted and output to the brother 2 signal optical waveguide 409b. Here, the exit portion of the second excitation optical waveguide 409a is opposed to the optical reflector 410 disposed on the right end surface 407a of the right substrate 407, and is emitted to the second excitation optical waveguide 409a. The excitation light is reflected by the optical mirror 41 (), and then

41 W0403463 從第2激發光導波路4〇9a通過第2分波多工器4〇8往光 大^波路403射出。因此,在光放大導波路403内,除 攸第1激發光導波路405a所送來之激發光外,稀土類元素 亦被反射鏡410所反射從第2激發光導波路4〇如返回之激 發光激發’而進行高效率之放大。 由於上述第1及第2分波多工器406,408與第41圖 所示者同一構成,故省略其說明。 器之 其次,針對上述構成之第9實施形態之光放大器之製傷 造方法加以說明如下。 整子交換法 以下,簡單說明上述光放大裝置401-1之製造方法之 例。逵製造方法稱為離子交換法,於第圖〜第49圖-中依序顯示該製程。此方法如第44圖所示,係在添加铒“ 等稀土類元素之玻璃基板(磷酸酯玻璃、βΚ7玻璃、鈉石灰 玻璃等)415表面’採用半導體製程所使用之微影技術,設 置配合導波路形狀之開口 417,進行圖案化來形成金屬膜 _ 41 6。由第44圖之形狀可知,開口 4丨6係對應上述光放大 導波路4 0 3之形狀。 其次,如第45圖所示,在熔融液42〇(將含有Ag等一. 價離子之中性鹽加熱至熔點以上熔化而成)中,如上述般* ,將圖案化形成金屬膜416之玻璃基板415浸泡既定時間 。藉此,如第46圖所示,在曝露於熔融液42〇之開口 417 之部份,於玻璃表面附近鈉(Na)離子被置換為一價之金屬 42 200403463 離子而形成作為導波路之高折射區域418(晝有陰線之區域 。其次’如第47圖所示除去金屬膜416後,如第48圖所 不,藉由電極42la,421b挾持上下兩面以施加電場,如第 仙圖所示,將高折射區域418埋入玻璃基板415内部的話 ’即能如第42圖所示製作光放大裝置4〇h。又,此時4 係適當設定炼融液之離子濃度、溫度、浸時間(離子交 換時間)、施加電場等’將光導波路彻作成單模之尺寸。 y 上述。兒明中,雖係說明了在中央玻璃基板402内 1 成光放大導波路之情形,但在左右玻璃基板404, 。内叹置各種導波路及分波多工器之情形也能同樣進行 製w光放大裝置401-1之方法不限於上述方法,也 可僅在形成光導波路之部份,使用離子注入方法,藉此選 "、、加辑等稀土類元素來加以製造,又,也可使用火焰 隹積法及反應性離子蝕刻法來製造(參照電子通信學會論 文雜誌 C-I ’ νοί. ΠΗ]、N〇. 5、pp214_221、1 994 年 之 m »八 、斗對本發明弟1 〇貫施形態之光放大裝置,參照 弟5 0圖加以却t . ★ "月。又’本實施形態之光放大裝置401-2與 弟42圖所示, 弟1 κ施形態之光放大裝置401-1僅有部份 構成相異,故針對與光放大裝置40H同一構成部份,係 '一予相同4 5虎並省略其說明。又,此光放大裝置4〇卜2, 係取代第4 9 m ~ 圖所示之光放大裝置401-1之光學反射鏡41〇 ’在第2激方也措丄 先¥波路409a上,僅設置布拉格繞射光栅 43 200403463 411之構成相異,其他部分則完全相同。布拉格繞射光栅 411 ’具有藉由第2分波多工器408分離之激發光來反射之 功能’係進行與光學反射鏡410相同之作用。因此,亦能 藉由此光放大裝置401-2,在光放大導波路403内,除了 從第1激發光導波路405a所送來之激發光外,稀土類元素 亦被由布拉格繞射光柵411反射,從第2激發光導波路 40 9a所返回之激發光激發,而進行高效率之放大。 光放大裝置(其1Π 針對本發明第11實施形態之光放大裝置,參照第51 # 圖加以說明。此實施形態之光放大裝置401-3及後述之第 4實施形態之光放大裝置40卜4中,與第42圖所示之第1 實施形態之光放大裝置同一構成部份,係賦予相同 符號並省略其說明。在此光放大裝置4〇1 —3中,係拆下光· 放大裝置401-1中配設在右玻璃基板4〇7右端面之光學反’ 射鏡410 ’並取而代之在與左玻璃基板404左端面之第1 激發光導波路405a對向之位置,配射光學反射鏡41〇之點 ,與第1圖之光放大裝置4(^4相異。 _ 此光放大裝置401-3,係從第1訊號光導波路405a射 入訊號光’從第2激發光導波路409a射入激發光。以此方 式射入之訊號光,透過第1分波多工器406被導引到光放· 大導波路403内,射入之激發光透過第2分波多工器4〇8 . 被導引到光放大導波路4〇3内,如上述般,在光放大導波 路4 0 3内將吼號光予以放大後,被放大之訊號光藉由第2 分波多工器408,通過第2訊號光導波路4〇9b往外部射出41 W0403463 is emitted from the second excitation optical waveguide 409a through the second multiplexer 408 to the optical waveguide 403. Therefore, in the optical amplification waveguide 403, in addition to the excitation light sent from the first excitation optical waveguide 405a, the rare earth elements are also reflected by the reflection mirror 410 and excited from the second excitation optical waveguide 40 as the returned excitation light. 'And perform efficient amplification. Since the first and second demultiplexers 406 and 408 have the same configuration as those shown in Fig. 41, their description is omitted. Next, the manufacturing method of the optical amplifier according to the ninth embodiment having the above-mentioned structure will be described below. Integral Exchange Method Hereinafter, an example of a method of manufacturing the optical amplifier device 401-1 will be described briefly. The rhenium manufacturing method is called an ion exchange method, and the processes are sequentially shown in FIGS. 49 to 49. As shown in Figure 44, this method is based on the surface of a glass substrate (phosphate glass, βκ7 glass, soda-lime glass, etc.) with rare earth elements such as gadolinium. The opening 417 in the shape of the wave path is patterned to form a metal film _ 41 6. From the shape in FIG. 44, it can be seen that the opening 4 丨 6 corresponds to the shape of the above-mentioned optical amplification waveguide 403. Next, as shown in FIG. 45 In a molten solution 42 ° (made by heating a neutral salt containing monovalent ions such as Ag to be melted above the melting point), as described above *, the glass substrate 415 patterned to form the metal film 416 is immersed for a predetermined time. Therefore, as shown in FIG. 46, in the portion of the opening 417 exposed to the molten liquid 42, sodium (Na) ions are replaced with monovalent metal 42 200403463 ions near the glass surface to form a high refraction as a guided wave path. Area 418 (the area with a negative line during the day. Secondly, after removing the metal film 416 as shown in FIG. 47, as shown in FIG. 48, the upper and lower sides are held by electrodes 42la, 421b to apply an electric field, as shown in the first fairy. High refraction area 4 If it is buried inside the glass substrate 415, 'the optical amplification device 40h can be produced as shown in Fig. 42. At this time, 4 sets the ion concentration, temperature, immersion time (ion exchange time) of the melting solution appropriately, Applying an electric field, etc., cuts the optical waveguide to a single-mode size. Y As mentioned above, although the explanation has been given of the case where the optical waveguide is amplified in the central glass substrate 402, the left and right glass substrates 404,. In the case where various waveguides and demultiplexers are installed, the method of manufacturing the optical amplifier 401-1 is not limited to the above method, and the ion implantation method may be used only in the portion where the optical waveguide is formed. ; ,, and other rare earth elements to produce, and also can be produced by flame deposition method and reactive ion etching method (refer to the paper of the Institute of Electronics and Communications CI 'νοί. ΠΗ], No. 5, pp214_221 M in 1994 »Eighth, Dou ’s light magnifying device in the form of the present invention, which is applied to the younger brother of the present invention, refers to FIG. Brother 42 pictured, Brother 1 κ Only a part of the configuration of the optical amplifying device 401-1 is different. Therefore, the same components as the optical amplifying device 40H are the same as those described above, and the description is omitted. In addition, this optical amplifying device 40b 2. It replaces the optical mirror 41o of the optical amplification device 401-1 shown in the figure from 9m to 40m. On the second laser, the wave path 409a is also set up, and only the Bragg diffraction grating 43 200403463 411 is provided. The structure is different, and the other parts are exactly the same. The Bragg diffraction grating 411 'having a function of reflecting by the excitation light separated by the second wavelength multiplexer 408' performs the same function as the optical mirror 410. Therefore, with this optical amplification device 401-2, in the optical amplification waveguide 403, in addition to the excitation light sent from the first excitation optical waveguide 405a, the rare earth elements are also reflected by the Bragg diffraction grating 411 The excitation light returned from the second excitation light waveguide 40 9a is excited, and high-efficiency amplification is performed. Optical Amplifying Device (1) The optical amplifying device according to the eleventh embodiment of the present invention will be described with reference to Figure 51. The optical amplifying device 401-3 in this embodiment and the optical amplifying device 40 in the fourth embodiment described later 4 The same components as those of the optical amplifying device of the first embodiment shown in FIG. 42 are given the same reference numerals and their descriptions are omitted. In this optical amplifying device 40-1, the optical amplifying device is removed In 401-1, an optical reflector '410' arranged on the right end face of the right glass substrate 407 and replaced with an optical reflection mirror at a position opposite to the first excitation light guide 405a of the left end face of the left glass substrate 404. The point 41 is different from the optical amplifier 4 (^ 4 in FIG. 1). _ This optical amplifier 401-3 is for entering the signal light from the first optical waveguide 405a, and is emitted from the second exciting optical waveguide 409a. Excitation light. The signal light incident in this way is guided into the optical amplifier and large waveguide 403 through the first division multiplexer 406, and the incident excitation light passes through the second division multiplexer 408. It is guided into the optical amplification waveguide 4 and as described above, in the optical amplification waveguide 4 After the roar light is amplified in 0 3, the amplified signal light is emitted to the outside through the second signal optical waveguide 409b through the second demultiplexer 408

44 200403463 。另一方面, 激發光诵i晶止4 I μ .44 200403463. On the other hand, the excitation light chants i crystals only 4 I μ.

反射鏡反射、從第1 激發光導波路405a返回之激發光激發 ’而進行高效率之放大。 Μ大裝置(其1^ · 就本發明第12貫施形態之光放大裝置,參照第5 2圖 加以說明。本實施形態之光放大裝置,僅有在左玻 璃基板404左端面之第1激發光導波路4〇5a上,設置布拉 格繞射光栅411之點係與上述第3實施形態之光放大裝置_ 401-3相異。此光放大裝置4〇卜4中,亦係從第i訊號光· 導波路405b射入訊號光,從第2激發光導波路409射入激 發光。因此,透過第1分波多工器406被導引到光放大導 波路403之訊號光,係因透過第2分波多工器408被導引 翁 到光放大導波路403内之激發光之放大作用而被放大,從 第2分波多工器408通過第2訊號光導波路409b往外部射 出。另一方面,激發光係在通過光放大導波路403後藉由 、 第1分波多工器406射出至第1激發光導波路405a,被布 . 拉格繞射光栅反射,再通過第1激發光導波路405a,透過 第1分波多工器406而被導引到光放大導波路403。因此 ,藉由此光放大裝置401-4,在光放大導波路403内,除 45 200403463 了從第2激發光導波路409a所送回之激發光外,稀土類元 素亦被不拉格繞射光柵411反射、從第丨激發光導波路 405a返回之激發光激發,而進行高效率之放大。 光源裝置 其次,針對使用上述構成之光放大裝置所構成之光源 I置30,芩照第53圖加以說明。光源裝置3〇,係由產生 雷射光之雷射光產生部31、與放大從雷射光產生部3ι產 生之雷射光的光放大部4 〇所構成。The mirror reflects and excites the excitation light returned from the first excitation light guide 405a to perform efficient amplification. M large device (1) The light amplifying device of the twelfth embodiment of the present invention will be described with reference to Fig. 52. The light amplifying device of this embodiment only has the first excitation at the left end surface of the left glass substrate 404. The point where the Bragg diffraction grating 411 is provided on the optical waveguide 405a is different from the optical amplification device _ 401-3 of the third embodiment described above. In this optical amplification device 40, the light from the i-th signal is also used. · Signal light is input into the guided wave path 405b, and excitation light is input from the second excitation light waveguide 409. Therefore, the signal light guided to the optical amplification waveguide 403 through the first division multiplexer 406 is transmitted through the second branch. The wave multiplexer 408 is guided to the amplification of the excitation light in the optical amplification waveguide 403 and is amplified, and is emitted from the second division multiplexer 408 to the outside through the second signal optical waveguide 409b. On the other hand, the excitation light After passing through the optical amplification waveguide 403, it is emitted to the first excitation optical waveguide 405a by the first demultiplexer 406, and is reflected by the cloth rag diffraction grating, and then passes through the first excitation optical waveguide 405a and passes through the first branch. Multiplexer 406 and guided to optical amplification waveguide 403 Therefore, with this optical amplification device 401-4, in the optical amplification waveguide 403, in addition to 45 200403463, the excitation light sent back from the second excitation optical waveguide 409a, the rare-earth elements are also grating-free. 411 reflects and excites the excitation light returned from the first excitation light guide 405a, and performs high-efficiency amplification. Light source device Next, the light source I constituted by using the light amplification device having the above configuration is set to 30, and it will be described with reference to FIG. 53. The light source device 30 is composed of a laser light generating section 31 that generates laser light and a light amplifying section 40 that amplifies the laser light generated from the laser light generating section 3m.

“田射光產生部31,具有以期望波長振盈之雷射犯,此 雷射32,例如,係由脈衝驅動振盈波長1 544叫、 、_半導體雷射者所構成。作為雷射光振錢長控制機 構,例如’當使用則半導體雷射來作為雷射時,能藉由 進行DFB半導體雷射之溫度控制來達成,藉由該方法,能 進-步使振I波長穩定化而控制成—定之波長,或對輸出 波長進行微調整。 作為將此振蘯波長控制成既定波長時之回饋控制之龄 控波長,係以DFB半導體雷射之振蘯波長來進行。此半; 體雷射32,具備脈衝控制機構33,其係進行電流控制等來 使脈衝«。藉此,即能在G.5ns〜-之範圍内控制所作 出之脈衝光之脈衝寬,纟醜Hz以下之範圍(例如胸z 〜l〇_z之範圍)控制該重複頻率。作為本構成例之一例 ’係精由脈衝控制機構33來製作脈衝寬—、重 100kHz之脈衝光。 、 以此方式所得到之脈衝雷射光輸出,係通過光隔離器 46 200403463 34導引到光放大部40,在光放大部40中加以放大。此光 放大部40中,首先,藉由第1級光放大器41進行放大。 該第1級光放大器41,係由上述之光放大器丨,j,, 101,320所構成,來自激發用半導體雷射41a之輸出(激 發光)係通過分波多工器(Wavelength Divisian"The field laser light generating unit 31 has a laser oscillating at a desired wavelength. This laser 32, for example, is composed of a pulse-driven oscillation oscillating wavelength of 1 544, and a semiconductor laser. A long control mechanism, for example, 'when using a semiconductor laser as the laser, it can be achieved by performing temperature control of the DFB semiconductor laser, and by this method, the oscillation I wavelength can be further stabilized and controlled to —A fixed wavelength, or fine adjustment of the output wavelength. As the age-controlled wavelength of the feedback control when this oscillation wavelength is controlled to a predetermined wavelength, the oscillation wavelength of the DFB semiconductor laser is used. This half; body laser 32, equipped with a pulse control mechanism 33, which performs current control to make the pulse «. By this, the pulse width of the pulse light produced can be controlled within the range of G.5ns ~-, and the range below the ugly Hz ( For example, the range of chest z to l0_z) controls the repetition frequency. As an example of this configuration example, the system uses pulse control mechanism 33 to produce pulse width-pulse light with a weight of 100 kHz. The pulses obtained in this way Laser light output, system The optical isolator 46 200403463 34 is guided to the optical amplifying section 40 and amplified in the optical amplifying section 40. In this optical amplifying section 40, first, the first-stage optical amplifier 41 is used for amplification. The first-stage optical amplifier 41, which is composed of the optical amplifiers 丨, j, 101, 320 described above. The output (excitation light) from the excitation semiconductor laser 41a is passed through a wavelength division multiplexer (Wavelength Divisian).

Multiplexer :稱為WDM)41b而輸入,以進行通過光隔離器 34輸入之雷射之光放大。 以此方式放大之第1級光放大器41之輸出(雷射光), 係通過窄波帶濾波器41a及光隔離器42b被導引到光分光 _ 鏡43,藉由分光鏡43平行分割成複數條波道。在被分割 成複數條之各波道,分別連接有第2級光放大器。但在 第5 3圖中,僅代表性的顯示一個波道。 又,窄波帶濾波器42a,係截止光放大器41所產生之-ASE光,且藉由透過DFB半導體雷射32之輸出波長(波長· 覓約為lpm以下),將透過光之波長寬實質上予以窄波帶化 一藉此A犯光射入後級之光放大器,而能防止降低雷射 光之放大增盈。此處,窄波帶濾波器之透過波長寬最好是 _ 為1 mp左右,但因ase光之波長寬為數十nm左右,故現時 點所得到之透過波長寬即使使用1〇〇pm左右之窄波帶濾波 态,在貫用上也沒問題,能截止ASE光。 · 第2級光放大器45,亦係由上述光放大器丨,r,i”, · \〇1>’ 320所構成,來自激發用半導體雷射45&之輸出(激 光)係通過WDM45b而輸入,將被第1級光放大器ο放 大之輸出光進-步的加以放大。第2級光放大器45之輸出 47 200403463 二二:帶遽波器46a及光隔離器46b而從輸出端47輪 匯二=47,係針對所有複數個波道聚集成束,予以 4ΪΓ由^ 第1級光放大11 41或第2級光放大器 ,、 “副,4G卜丨,4G卜2,他〜3, 40卜4所構 成 ^ ’ 即不需要 WDM41b,WDM45b。 又,以上各實施形態中,係顯示了為了防止返回光之 影響,而在各連接部適當插入隔離器 1,或為了得到良好 放大特性,而插入窄波帶濾波器之構成例。但是, :::或乍波π濾波器之配置處、或其數量並不限定在前 α貫施形態、,例如,可視本發明光源裝置之要求精度等來 一適方當決定有時亦可不設置隔離器與窄波帶據波器中之至少 又乍波τ濾波器只要能針對期望之波長獲得高透射-率即可,濾波器之透過波長寬在lpm以下即已足夠。如前_ 所述的使用窄波帶濾波器,即能減輕光放大器所產生之自 然放出光ASE(Amplified Sponta则us Emissi⑽)所造成之 雜訊,此外,亦能抑制來自前級光放大器之ASE所造成之 φ 基本波輸出之放大率降低。 光治療裝詈 針對使用上述構成之本發明之光源裝置3〇所構成之光· 治療裝置’參照第54圖〜f 56目,說明如下。此光治療. 裝置50,係將雷射光照射於角膜來進行表面之燒蝕(pRK ··Multiplexer (referred to as WDM) 41b is input to amplify the laser light input through the optical isolator 34. The output (laser light) of the first-stage optical amplifier 41 amplified in this way is guided to the optical beam splitter_mirror 43 by the narrow-band filter 41a and the optical isolator 42b, and is divided into complex numbers by the beam splitter 43 in parallel A wave of channels. A second-stage optical amplifier is connected to each channel divided into a plurality of channels. However, in Figure 53, only one channel is representatively displayed. In addition, the narrow-band filter 42a cuts off the -ASE light generated by the optical amplifier 41, and transmits the wavelength of the transmitted light through the DFB semiconductor laser 32 (wavelength · approximately less than lpm). A narrow band is applied to the optical amplifier so that the A light enters the subsequent stage, which can prevent the amplification and gain of the laser light from being reduced. Here, the transmission wavelength width of the narrow-band filter is preferably about 1 mp, but since the wavelength width of the ase light is about tens of nm, the transmission wavelength width obtained at the current point is even about 100 pm. The narrow-band filter state is also no problem in general use, and can cut off ASE light. · The second-stage optical amplifier 45 is also composed of the above-mentioned optical amplifiers 丨, r, i ", · \ 〇1 > '320, and the output (laser) from the excitation semiconductor laser 45 & is input through WDM45b, The output light amplified by the first-stage optical amplifier ο is further amplified. The output of the second-stage optical amplifier 45 47 200403463 22: With the wave filter 46a and the optical isolator 46b, the second output from the output terminal 47 = 47, which is focused on all the multiple channels to be bundled, and 4ΪΓ is amplified by the first-stage optical amplifier 11 41 or the second-stage optical amplifier, "the vice, 4G BU 丨, 4G BU 2, he ~ 3, 40 BU 4 The composition ^ 'does not require WDM41b, WDM45b. In addition, in the above embodiments, a configuration example is shown in which an isolator 1 is appropriately inserted in each connection portion to prevent the influence of return light, or a narrow-band filter is inserted in order to obtain good amplification characteristics. However, ::: or the configuration of the first wave π filter, or its number is not limited to the previous α implementation, for example, depending on the required accuracy of the light source device of the present invention, it may be determined appropriately. It is sufficient to provide at least one of the isolator and narrowband data wave filter with a high wave transmittance for the desired wavelength, and the transmission wavelength of the filter is less than lpm. The use of a narrow-band filter as described in the previous paragraph can reduce the noise caused by the natural emitted light ASE (Amplified Sponta us Emissi⑽) generated by the optical amplifier. In addition, it can also suppress the ASE from the previous optical amplifier. The resulting amplification of the φ fundamental wave is reduced. Light Therapy Device The light and treatment device configured using the light source device 30 of the present invention configured as described above will be described with reference to Figs. 54 to 56. This phototherapy. The device 50 is to irradiate the cornea with laser light to perform surface ablation (pRK ··

Photorefractive Keratectomy)或切開之角膜内部之燒蝕 (LASIK . Laser Intrastromal Keratomileusis),以矯正 48 角膜之曲率或凹凸,_ 進仃近視、散光等治療之裝置。 光治療裝置50,如^ ^ 光源裝請、波長轉::圖所示,基本上,係由上述 出之雷射光轉換為 =Γ°(將以此光源裝 將以波長轉換雷射光)、照射光學裝置70( 角膜HC Π:轉換波長之雷射光導引到眼球EY之 ^ Μ部位)並加以照射)、及觀察光學裝置Photorefractive Keratectomy) or Laser Intrastromal Keratomileusis (LASIK. Laser Intrastromal Keratomileusis) to correct the curvature or unevenness of the cornea 48. It is a device for the treatment of myopia and astigmatism. Phototherapy device 50, such as ^ ^ light source installed, wavelength conversion :: As shown in the figure, basically, the laser light from the above is converted to = Γ ° (this light source will be used to convert laser light with wavelength), irradiation Optical device 70 (corneal HC Π: laser light of converted wavelength is guided to ^ M site of eyeball EY) and irradiated), and observation optical device

52,係配設在X —γ蒋 △ &庄口P 詈動 藉由X—Y移動台53,裝 置框體51全體在楚w 在弟54圖中,能在箭頭χ方向( 方向)與直垂紙面之γ方向移動。 3面左右 光源1置30係如上述之構成,從其輸出端47輸出之 雷射光在波長轉換裝置6〇内被轉換為所欲波長(此裝置中 係適合角膜治療之波長193nm ’與ArF準分子雷射光相 同之波長)之治療用雷射光。此波長轉換裝置6()之構成顯 示於第55圖中,其係顯示使用非線性光學結晶,將從光 源裝置3〇之輸出端47射出之既定波長(在本實施形態中, 波長為1.544_)之基本波轉換波長為8倍波(高次譜波), 產生193nm之紫外光(與ArF準分子雷射相同之波長)之構 成例。從輸出端47輸出之波長〗,544_(頻率〇)之基本波 ,從左向右透過非線性光學結晶(61,62,63)而輸出。又 ,在非線性光學結晶(61,62,63)之間,如圖NJ131示, 設有聚光透鏡(64,65)。 此等基本波通過非線性光學結晶61之際,因2次諧波 之產生’而產生基本波頻率〇之2倍,亦即產生頻率2ω(52, which is arranged in X-γ Jiang △ & Zhuangkou P. By moving the X-Y mobile station 53, the whole device frame 51 is in Chu w. In the figure 54, it can be connected with the arrow χ direction (direction) and Move in the γ direction on a straight paper surface. The three-sided left and right light sources 1 and 30 are configured as described above, and the laser light output from its output end 47 is converted into a desired wavelength within a wavelength conversion device 60 (in this device, a wavelength of 193nm suitable for corneal treatment is used) Molecular laser light with the same wavelength) for therapeutic laser light. The structure of this wavelength conversion device 6 () is shown in FIG. 55, which shows a predetermined wavelength emitted from the output terminal 47 of the light source device 30 using a non-linear optical crystal (in this embodiment, the wavelength is 1.544_ The basic wave conversion wavelength is 8 times the wave (higher-order spectrum wave), and an example of the structure that generates 193nm ultraviolet light (the same wavelength as the ArF excimer laser). The wavelength output from the output terminal 47, the basic wave of 544_ (frequency 0), is transmitted through the non-linear optical crystal (61, 62, 63) from left to right and output. In addition, between the nonlinear optical crystals (61, 62, 63), as shown in FIG. NJ131, a condenser lens (64, 65) is provided. When these fundamental waves pass through the non-linear optical crystal 61, the frequency of the fundamental wave is twice as high as the frequency of 2ω due to the generation of the second harmonic ’, that is, the frequency 2ω (

49 200403463 波長為772nm(l,544nm之1/2))之2倍波。所產生 立 波往右方向前進,射入下一非線性光學結曰曰曰6二2 : 進行第2次譜波之產生,而產生呈右 处 叩座生具有入射波頻率2 ’亦即’產生相對基本波具有4倍頻率4①(波: 386nm(1,544nm^ 1/4))之4倍波。所產生之4倍波進^ 進行到右方之非線性光學結晶63,此處,再進行第2 之產生,而產生具有射入波之頻率彳^之2倍,亦即,產 生具有相對基本波為8倍之頻率8一 8倍波(波長: 之 193nm)。 ’’49 200403463 The wavelength is twice the wavelength of 772nm (1/2 of 544nm). The generated vertical wave advances to the right and enters the next non-linear optical junction. It is said that the second spectral wave is generated. The relative fundamental wave has a 4 times frequency of 4 times the frequency 4① (wave: 386 nm (1,544 nm ^ 1/4)). The generated 4x wave advance ^ proceeds to the non-linear optical crystal 63 on the right side, and here, the second generation is performed again, and the frequency 彳 ^ of the incident wave is generated, that is, the generation has a relatively basic The wave is 8 times the frequency 8 to 8 times (wavelength: 193nm). ’’

作為前述波長轉換所使用之非線性光學結晶,例如, 在從基本波轉換為2倍波之非線性光學結晶Η係使用 LiB3〇5(LBO)結晶,在從2倍波轉換為4倍波之非線性光學 結晶62係使用LiB3G5aBQ)結晶,在從4倍波轉換為8二 波之非線性光學結晶63則係使用結晶。 此處,在使用LB0結晶之從基本波至2倍波之轉換,二用 來波長轉換之相位匹配中,係使用LB〇結晶之溫度調節方As the non-linear optical crystal used for the aforementioned wavelength conversion, for example, a non-linear optical crystal converted from a fundamental wave to a 2x wave is a LiB305 (LBO) crystal, and is converted from a 2x wave to a 4x wave. The non-linear optical crystal 62 is a LiB3G5aBQ) crystal, and the non-linear optical crystal 63 is a crystal when the non-linear optical crystal 63 is converted from 4 times to 8 times. Here, in the phase matching using the LB0 crystal for the conversion from the fundamental wave to the 2x wave, and the second purpose for wavelength conversion, the temperature adjustment method of the LB0 crystal is used.

法(Non-Critical Phase Matching: NCPM)。因 NCPM 不致 引起非線性光學結晶内之基本波與第2高次諧波之角度偏 移(Walk-off),故能以高效率轉換為2倍波,此外,所產 生之2倍波不會因角度偏離而使光束受到變形,故有利。 以此方式,在波長轉換裝置60中,將波長轉換所輸出 之波長193nm之雷射光(與ArF準分子雷射光之波長同一之 雷射光)導入眼球EY之角膜HC表面,針對此處所照射之照 射光學裝置70及觀察光學裝置8〇,加以說明。又,因光 50 200403463 1 · 59μπι 之 故藉由波 源裝置30係由DFB半導體雷射(其係在51jum、 範圍内,具有振盪波長)、或光纖雷射所構成, 長轉換裝4 60’來自固體雷射之上述波長之雷射光被轉換 為在189歷〜199測之範圍内具有8倍諧波之雷射光而輸出 。如此,此雷射光雖係與ArF準分子雷射光為大致同一冬 波長之雷射光,代其脈衝振盪之重複頻率為非常高的 100kHz 〇 - 參 第56 ® ,係顯示此照射光學裝4 7〇 &觀察光學裝置 80之構成。照射光學裝置7〇係由聚光透鏡η(藉由波長轉 換裝置6°’將來自上述光《置3〇之光波長轉換所得到 之波長⑼⑽之雷射光聚光成細束狀)及分色鏡72(將上述 =之表射到治療… …、隹 在角膜HC表面,雷射光係以(Non-Critical Phase Matching: NCPM). Since the NCPM does not cause an angular deviation (Walk-off) of the fundamental wave and the second harmonic wave in the nonlinear optical crystal, it can be converted into a double wave with high efficiency. In addition, the generated double wave will not This is advantageous because the beam is deformed due to the angle deviation. In this way, in the wavelength conversion device 60, the laser light having a wavelength of 193 nm (laser light having the same wavelength as the ArF excimer laser light) output by the wavelength conversion is introduced into the surface of the cornea HC of the eyeball EY, and the irradiation here The optical device 70 and the observation optical device 80 will be described. In addition, because of the light 50 200403463 1 · 59μπι, the wave source device 30 is composed of a DFB semiconductor laser (which is in the range of 51jum and has an oscillation wavelength) or a fiber laser. The long conversion device 4 60 'comes from The laser light of the above-mentioned wavelength of the solid laser is converted into laser light having an 8-fold harmonic within a range of 189 calendar to 199 and output. In this way, although this laser light is a laser light of the same winter wavelength as the ArF excimer laser light, the repetition frequency of its pulse oscillation is very high 100 kHz 〇- See page 56 ®, which shows that this optical device 4 7〇 & Configuration of observation optical device 80. The irradiation optical device 70 is composed of a condenser lens η (condensing the laser light of the wavelength ⑼⑽ obtained by the wavelength conversion of the light from the above-mentioned light 30 into a thin beam shape by a wavelength conversion device 6 ° ′) and color separation. Mirror 72 (shoots the surface of the above = to the treatment ..., 隹 on the surface of the corneal HC, the laser light is based on

移動ί:,以進行該部份之蒸散。此時,藉由[Y 使照:在角:t C置::上51 ΐ體移動=方…方向, 、 之雷射光點掃描移動,進行角膜 表面之燒餘,以進行近視、散光、遠視等之治療。 -面:r::r醫::手術者透過觀察光學裝置⑽, 。該觀察光學移動台53之動作來進行 之眼球EY之角膜ΗΓ#纟由照明燈85(用以照明治療對象 來自以)、物鏡81(透過分色鏡72,接受 射來自物鏡之光)、稜鏡82(用以反 成,能通過_觀察角:= 51 200403463 曝光裝置 其次,就使用上述光源裝置30構成,於半導體製程之 一之光微影製程所使用之曝光裝置_,參照第57圖加以 說明。光微影製程所使用之曝光裳置,其原理與照相製版 相同,其係利用光學投影,W光罩(標線片)上精密描繪之 元件圖案轉印在塗佈光阻之半導體晶圓或玻璃基板等上。 此曝光裝i 500,係由上述光源裝£ 3〇、波長轉換裝置 501、照明光學系統502、光罩支持台5〇3(用以支持光罩( 才示線片)510)、投影光學系統5〇4、裝置台5〇5(用以載置保 _ 持半導體晶圓515)、及驅動裝置5〇6(用以使載置台5〇5水 平移動)所構成。此曝光裝置500,係將從上述光源裝置3〇 之輸出端47輸出之雷射光輸入波長轉換裝置5〇1,在此處 ’將波長轉換為半導體晶圓515曝光所需要之波長之雷射- 光以此方式波長轉換之雷射光,輸入複數個透鏡所構成、 之照明光學系統502,通過照明光學系統5〇2,而照射於‘光 罩支持台503所支持之光罩51〇全面。以此方式照射,通 k光罩510之光,具有描緣在光罩5〇〇之元件圖案像,此 _ 光透過投影光學系統504,照射在載置台5〇5所載置之半 導體晶圓515之既定位置。此時,藉由投影光學系統5〇4 ,將光罩51 0之凡件圖案像縮小成像曝光在半導體晶圓β 515 上。 _ [圖式簡單說明] (一)圖式部份 第1圖’係顯示本發明第1實施形態之光放大裝置之 52 200403463 截面圖。 第2 (A )〜2 (D)圖,係沿第1圖之線P — P及Q — Q,顯 示上述光放大裝置之截面圖。 第3圖,係顯示本發明第2實施形態之光放大裝置之 截面圖。 第4圖,係顯示本發明第3實施形態之光放大裝置之 截面圖。 第5圖〜第1 0圖,係顯示藉由離子交換法之第1〜第 3實施形態之光放大裝置之製程說明圖。 第11圖〜第14圖,係顯示藉由火焰堆積法及反應性 離子#刻法之第1〜第3實施形態之光放大裝置之製程說 明圖。 第15圖,係顯示本發明第4實施形態之光放大裝置之. 平面圖。 第1 6圖,係放大顯示本發明第4實施形態之光放大裝 置之光開關部之俯視圖。 第π圖,係顯示沿第15圖之箭頭A_ A將本發明第4 _ 實施形態之光放大裝置之光開關部予以放大之截面圖。 第18(A)圖及第18(B)圖,係第4實施形態之光放大裝 置之光開關部之訊號之電場模式的說明圖。 · j 19圖〜第24圖’係顯示藉由離子交換法之第4實. 施形態之光放大裝置之製程說明圖。 、 弟25圖〜第28圖,# _ +站丄 协7 、 係”、、員不错由火焰堆積法及反應性 離子蝕刻法藉由離子交換法者 ^ 乐4貝施形悲之光放大裝置 53 200403463 之製程說明圖。 第29圖,係顯示本發明第5實施形態之光放大裝置之 截面圖。 第30圖,係沿第29圖之線B—B,顯示本發明第$實 施形態之光放大裝置之截面圖。 第31圖,係沿第2 9圖之線c — C,顯示本發明第5實 施形態之光放大裝置之截面圖。 第3 2圖〜第3 7圖,係顯示藉由離子交換法之第5實 施形態之光放大裝置製程之說明圖。 籲 第38圖’係顯示本發明第6實施形態之光放大裝置之 截面圖。 第39圖’係表示本發明第7實施形態之光放大裝置之 截面圖。 - 第4 0圖’係表示本發明第8實施形態之光放大裝置之’ 截面圖。 第41(A)圖及第41(B)圖,係顯示本發明之光學放大裝 置所使用之分波多工器構成之截面圖。 _ 弟4 2圖’係顯示本發明第9實施形態之光放大裝置之 截面圖。 第43圖,係沿第1圖之線d— D,顯示本發明第9實 -施形態之光放大裝置之截面圖。 、 第44圖〜第49圖,係顯示藉由離子交換法之第9實 施形態之光放大裝置製程之說明圖。 第50圖,係顯示本發明第1 〇實施形態之光放大裝置 54 200403463 之截面圖。 第51圖’係顯示本發明第11實施形態之光放大裝置 之截面圖。 第52圖’係顯示本發明第1 2實施形態之光放大裝置 之截面圖。 第53圖’係顯示本發明之光源裝置構成之概略圖。· 第5 4圖’係顯示本發明之光治療裝置構成之概略圖。 第55圖’係顯示構成上述光治療裝置之波長轉換裝置 之構成概略圖。 第5 6圖’係顯示構成上述光治療裝置之照射光學裝置 及觀祭光學裝置構成之概略圖。 第57圖’係顯示本發明曝光裝置構成之概略圖。 (二)元件代表符號 1 1’’ 1”,101,201,320 光放大裝置 3 3 0 ’ 34 0 ’ 4 01 -1〜401 -4 光放大裝置 2,11,11 ’,1 〇 2,111,11 Γ 玻璃基板 202,211,321,331,341,415 玻璃基板 3,103,203 光放大導波路 3a,3a’,3a” 第1導波路 3b,3b’,3” 第2導波路 3c’ 第3導波路 4a, 104a, 203a, 322a 入口部 4b, 204a, 205a, 325a, 333c, 334c, 345a 出口部 A 第1中間部 55 200403463 12,112,212,416 金屬膜 13, 113, 114,213a,213b,213c,417 開口 13a, 113a 第 1 開口 13b, 113b 第 2 開口 14,115,116,215b,215c,418 高折射區域 15a,15b,117a,117b 電極 217a, 217b, 421a, 421b 電極 18,118,218,420 熔融液Move ί: for evapotranspiration of that part. At this time, with [Y to make the photo: at the angle: t C set :: upper 51 carcass movement = square ... direction, the laser light spot scanning movement of, to burn the corneal surface, for myopia, astigmatism, hyperopia Wait for treatment. -Surface: r :: r 医 :: The operator looks through the observation optical device ⑽,. The cornea ΗΓ # of the eyeball EY performed by the observation of the movement of the optical moving table 53 is provided by an illumination lamp 85 (for illuminating the subject to be treated), an objective lens 81 (through the dichroic lens 72 and receiving light from the objective lens), Mirror 82 (for inversion, can pass through _observation angle: = 51 200403463 exposure device. Secondly, the above-mentioned light source device 30 is used. The exposure device used in the light lithography process of one of the semiconductor processes_, see FIG. 57 The principle of the exposure dress used in the photolithography process is the same as that of the photoengraving. It uses optical projection and the pattern of the elements accurately drawn on the W mask (reticle) is transferred to the photoresist-coated semiconductor. Wafer or glass substrate, etc. This exposure device i 500 is installed by the above light source £ 30, the wavelength conversion device 501, the illumination optical system 502, and a photomask support table 503 (to support the photomask (only shown) Pieces) 510), a projection optical system 504, a device table 505 (for holding the holding semiconductor wafer 515), and a driving device 506 (for horizontally moving the mounting table 505) The exposure device 500 is based on the light source device 3 described above. The laser light output from the output terminal 47 is input to the wavelength conversion device 501, where 'converts the wavelength to the laser of the wavelength required for the exposure of the semiconductor wafer 515-the laser light of wavelength conversion in this manner is input to a plurality of The illumination optical system 502 constituted by the lens is irradiated on the entire surface of the mask 51 supported by the 'mask support stand 503' through the illumination optical system 502. In this way, the light passing through the k mask 510 has The image of the element pattern traced on the mask 500 is transmitted through the projection optical system 504 and irradiated to a predetermined position of the semiconductor wafer 515 placed on the mounting table 505. At this time, the projection optical system 5 is used 〇4, the pattern image of the mask 51 0 is reduced and exposed on the semiconductor wafer β 515. _ [Simplified description of the drawing] (1) The first part of the drawing shows the first embodiment of the present invention. 52 200403463 cross-sectional view of the optical amplifying device. Figures 2 (A) to 2 (D) show the cross-sectional views of the optical amplifying device along the lines P — P and Q — Q of FIG. 1. It is a sectional view showing a light amplification device according to a second embodiment of the present invention. FIG. 5 is a cross-sectional view showing an optical amplifying device according to a third embodiment of the present invention. FIGS. 5 to 10 are explanatory diagrams showing manufacturing processes of the optical amplifying device according to the first to third embodiments by an ion exchange method. Fig. 11 to Fig. 14 are explanatory diagrams showing the manufacturing process of the optical amplifying device of the first to third embodiments by the flame deposition method and the reactive ion # engraving method. Fig. 15 shows the fourth embodiment of the present invention. Plan view of the optical amplifying device of the embodiment. Fig. 16 is a plan view showing the optical switch portion of the optical amplifying device of the fourth embodiment of the present invention in an enlarged manner. Fig. Π shows the arrow A_A along the 15th figure. A cross-sectional view in which the optical switch portion of the optical amplifier device according to the fourth embodiment of the present invention is enlarged. Figures 18 (A) and 18 (B) are explanatory diagrams of the electric field pattern of the signal of the optical switch section of the optical amplifier device of the fourth embodiment. · Figure 19 to Figure 24 'are explanatory diagrams showing the manufacturing process of the optical amplification device according to the fourth embodiment of the ion exchange method. Figure 25 ~ Figure 28, # _ + 站 丄 协 7, Department ", good staff by flame stacking method and reactive ion etching method by ion exchange method ^ Le 4 Beishi shape light amplification device 53 200403463 Process description diagram. Fig. 29 is a cross-sectional view showing a light magnifying device according to a fifth embodiment of the present invention. Fig. 30 is a line B-B along Fig. 29, showing a first embodiment of the present invention. Sectional view of the optical amplifying device. Fig. 31 is a cross-sectional view of the optical amplifying device according to the fifth embodiment of the present invention along the line c-C of Figs. An explanatory diagram of the manufacturing process of the optical amplifier device according to the fifth embodiment of the ion exchange method. Fig. 38 'is a cross-sectional view showing the optical amplifier device according to the sixth embodiment of the present invention. Fig. 39' is a seventh embodiment of the present invention. Sectional view of an optical amplifying device according to an embodiment.-Fig. 40 'is a sectional view of an optical amplifying device according to an eighth embodiment of the present invention. Figs. 41 (A) and 41 (B) are diagrams showing A cross-sectional view of the structure of a demultiplexer used in the optical amplification device of the invention. A cross-sectional view of a light amplifying device according to a ninth embodiment of the present invention is shown in Fig. 43. Fig. 43 is a cross-sectional view of the light amplifying device according to the ninth embodiment of the present invention along line d-D. Figures 49 to 49 are explanatory diagrams showing the manufacturing process of the optical amplifier device according to the ninth embodiment of the ion exchange method. Figure 50 is a cross-sectional view showing the optical amplifier device 54 200403463 according to the tenth embodiment of the present invention. Fig. 51 'is a sectional view showing an optical amplifying device according to an eleventh embodiment of the present invention. Fig. 52' is a sectional view showing an optical amplifying device according to a 12th embodiment of the present invention. Fig. 53 'is a view illustrating a Schematic diagram of the structure of the light source device. Fig. 5 and 4 'are diagrams showing the structure of the phototherapy device of the present invention. Fig. 55' is a diagram of the structure of the wavelength conversion device constituting the phototherapy device. Figs. 5 and 6 'It is a schematic diagram showing the structure of an irradiation optical device and an observing optical device constituting the above-mentioned phototherapy device. Fig. 57' is a diagram showing the structure of an exposure device of the present invention. (II) Symbols 1 1 '' 1 '', 10 1,201,320 optical amplifying device 3 3 0 '34 0' 4 01 -1 ~ 401 -4 optical amplifying device 2,11,11 ', 1 〇2,111,11 Γ glass substrate 202,211,321,331 , 341, 415 glass substrates 3, 103, 203 optical amplification waveguides 3a, 3a ', 3a "first waveguide 3b, 3b', 3" second waveguide 3c 'third waveguide 4a, 104a, 203a, 322a Entrance section 4b, 204a, 205a, 325a, 333c, 334c, 345a Exit section A 1st middle section 55 200403463 12, 112, 212, 416 Metal film 13, 113, 114, 213a, 213b, 213c, 417 Opening 13a, 113a 1st opening 13b, 113b 2nd opening 14, 115, 116, 215b, 215c, 418 High-refraction areas 15a, 15b, 117a, 117b Electrode 217a, 217b, 421a, 421b Electrode 18, 118, 218, 420 Molten liquid

21,121 矽基板 22,122 下部包覆層 23,123 核心層 24,124,125 導波路層 25,126 上部包覆層 28,128 氫氧燃燒器 30 光源裝置 31 雷射光產生部21,121 silicon substrate 22,122 lower cladding layer 23,123 core layer 24,124,125 waveguide layer 25,126 upper cladding layer 28,128 oxyhydrogen burner 30 light source device 31 laser light generating section

32 半導體雷射 33 脈衝控制機構 34,42b,46b 光隔離器 40 光放大部 41 第1級光放大器 41a,45a 激發用半導體雷射 41b,45b,220 分波多工器 42a,46a 窄波帶濾波器 56 200403463 43 分光鏡 45 第2級光放大器 47 輸出端 50 光治療裝置 51 裝置框體 52 底座部 53 X-Y移動台 60, 501 波長轉換裝置 61, 62, 63 非線性光學結 64,65, 71 聚光透鏡 70 照射光學裝置 72 分色鏡 80 觀察光學裝置 81 物鏡 82 稜鏡 83 目鏡 85 照明燈 104b 第1出口部 104c 第1出口部 105 光開關部 10 5a 第1開關導波路 105b 第2開關導波路 106 第1射出導波路 107 第2射出導波路32 Semiconductor laser 33 Pulse control mechanism 34, 42b, 46b Optical isolator 40 Optical amplifier 41 First-stage optical amplifier 41a, 45a Semiconductor laser 41b, 45b, 220 demultiplexer 42a, 46a for narrow-band filtering 56 200403463 43 Beamsplitter 45 Second-stage optical amplifier 47 Output 50 Phototherapy device 51 Device frame 52 Base portion 53 XY mobile stage 60, 501 Wavelength conversion device 61, 62, 63 Non-linear optical junction 64, 65, 71 Condensing lens 70 Irradiation optical device 72 Dichroic mirror 80 Observation optical device 81 Objective lens 82 稜鏡 83 Eyepiece 85 Illumination lamp 104b First exit section 104c First exit section 105 Optical switch section 10 5a First switch waveguide 105b Second switch Guided wave path 106 The first outgoing guided wave path 107 The second outgoing guided wave path

57 200403463 108a 第1加熱器 108b 第2加熱器 109a 控制器 109b 電源 113c 第3開口 114a 第4開口 114b 第5開口 202a, 321a, 331a 左端面(入口側端面) 202b, 321b, 331c 右端面(出口侧端面) 204, 205, 323, 324 分歧導波路 221 第1入口側導波路 222 第2入口侧導波路 223 第1出口側導波路 224 第2出口側導波路 225 耦合部 322 入口側導波路 325 出口側導波路 327a 第1中間部 327b 第2中間部 334b 332 入口側訊號光導波路 333a 第1訊號光分歧導波路 333b 第1分歧放大導波路 334a 第2訊號光分歧導波路 第2分歧放大導波路 200403463 336a 第1激發光分歧導波路 336b 第2激發光分歧導波路 337 中間部 338a,338b, 348a,406 第 1 分波多工器 348b, 408 第2分波多工器 · 341a 左端面(入口側端面) . 341b 右端面(出口側端面) 341- 1 第1玻璃基板 342- 2第2玻璃基板 籲 342 入口側訊號光導波路 343a 第1訊號光分歧導波路 343b 分歧放大導波路 344a 第2訊號光分歧導波路 344b 分歧放大導波路 ' 345 出口侧導波路 346a 第1激發光分歧導波路 346b第2激發光分歧導波路 籲 347a 第1中間部 347b 第2中間部 402 中央玻璃基板 ’ 402a 左接合面 ‘ 402b 右接合面 403 光放大導波路 404 左基板 59 200403463 404a 左端面 405a 第1激發光導波路 405b 第1訊號光導波路 406 第1分波多工器 40 7 右基板 407a 右端面 409a 第2激發光導波路 409b 第2訊號光導波路57 200403463 108a 1st heater 108b 2nd heater 109a controller 109b power supply 113c 3rd opening 114a 4th 114b 5th opening 202a, 321a, 331a left end face (inlet end face) 202b, 321b, 331c right end face (outlet Side end face) 204, 205, 323, 324 Bifurcated waveguide 221 First inlet-side waveguide 222 Second inlet-side waveguide 223 First outlet-side waveguide 224 Second outlet-side waveguide 225 Coupling section 322 Entrance-side waveguide 325 Exit-side waveguide 327a, first intermediate portion 327b, second intermediate portion 334b 332 entrance-side optical waveguide 333a, first optical divergent waveguide 333b, first divergent amplified waveguide 334a, second optical divergent waveguide, second divergent amplified waveguide 200403463 336a 1st excitation light branching waveguide 336b 2nd excitation light branching waveguide 337 middle part 338a, 338b, 348a, 406 1st branching multiplexer 348b, 408 2nd branching multiplexer · 341a left end face (entrance end face ) 341b Right end surface (exit-side end surface) 341-1 1st glass substrate 342-1 2nd glass substrate 342 entrance side signal optical waveguide 343a first signal optical divergent waveguide 343b divergent Amplified guided wave path 344a 2nd signal optical branched guided wave path 344b Divided amplified guided wave path '345 Exit side guided wave path 346a First excitation light branched guided wave path 346b Second excitation light branched guided wave path 347a 1st middle part 347b 2nd middle part 402 Central glass substrate '402a left joint surface' 402b right joint surface 403 optical amplification waveguide 404 left substrate 59 200403463 404a left end surface 405a first excitation optical waveguide 405b first signal optical waveguide 406 first demultiplexer 40 7 right substrate 407a Right end face 409a 2nd optical waveguide 409b 2nd optical waveguide

410 光學反射鏡 411 布拉格繞射光柵 500 曝光裝置 502 照明光學系統 503 光罩支持台 504 投影光學系統 505 載置台 50 6 驅動裝置410 Optical mirror 411 Bragg diffraction grating 500 Exposure device 502 Illumination optical system 503 Mask support table 504 Projection optical system 505 Mounting table 50 6 Drive device

510 光罩(標線片) 515 半導體晶圓 60510 Photomask (reticle) 515 Semiconductor wafer 60

Claims (1)

200403463 拾、申請專利範圍: 種光放大裝置,係在基板上設置以 延伸的光放大導波路,其特徵在於: &截面形狀 該光放大導波路,從入口部到 面形狀延伸,從該帛i中 。糸以-定截 之截面形狀延伸。 …口和係以呈錐形擴六 2、如申請專利範圍第】項之光放大裝置光 =導波路從該入口部延伸到該…間部之部:係= 4保持早拉之尺寸,且從該第丨中間部起呈錐形擴大之 波路亦係在保持單模之範圍内,形成呈錐形擴 、如申請專利範圍第1項之光放大裝置,其中,該 放大導波路,從該第1中間部朝該出口部到第2中間: 止具有以錐形擴大延伸之截面形狀,從該第2中間部到 出口 ^ ’則為連接該擴大成錐形之截面形狀,而以一定 面形狀延伸的方式構成。200403463 Patent application scope: An optical amplifying device, which is provided on a substrate with an extended optical amplifying waveguide, which is characterized by: & a cross-sectional shape of the optical amplifying waveguide extending from an entrance to a surface shape, from the i in.延伸 Extends in a cross-sectional shape. … And the opening is expanded in a conical shape. 2. The light amplifying device according to item [Scope of the patent application]. Light = Guided wave path extends from the entrance to the… part of the middle: Department = 4 Keep the size of early pull, and The tapered and enlarged wave path from the middle part is also within the range of maintaining a single mode to form a tapered and enlarged optical amplification device such as the first item in the scope of patent application, wherein the amplified guided wave path starts from the The first intermediate portion faces the exit portion to the second intermediate portion: it has a cross-sectional shape that extends and expands in a tapered shape, and from the second intermediate portion to the exit ^ 'is connected to the enlarged cross-sectional shape and has a constant surface. The shape is extended. 、如申請專利範圍第3項之光放大裝置,其中,該光 放大導波路從該入口部延伸到該第丨中間部之部份,係設 定為能保持單模之尺寸。 、一種光放大裝置之製造方法,其特徵在於: 在添加稀土類元素之玻璃基板表面形成膜,該膜設有 開口 ’其從一端部起以既定寬度直線狀延伸至中間部,且 從該中間部朝向另一端部具有呈錐形擴大之寬度; 將该玻璃基板,浸在將含有一價離子之中性鹽加熱到 61 200403463 點以上製成的熔融液中既定時間,以在位於該玻璃基板 表面之该膜之開口部份,形成導波路之高折射率區域; 從該玻璃基板除去該膜; 在该玻璃基板上施加電場,而使該高折射區域埋入該 玻璃基板之内部。 6、 如申請專利範圍第5項之光放大裝置之製造方法, 其中,係根據該膜開口之寬度尺寸,來變化調節該玻璃基 板各部份浸在該熔融液之時間。For example, the optical amplifying device of the third scope of the patent application, wherein the optical amplifying waveguide extends from the entrance portion to the middle portion, and is set to maintain a single-mode size. A method for manufacturing an optical amplifying device, characterized in that a film is formed on the surface of a glass substrate to which a rare earth element is added, and the film is provided with an opening 'that extends linearly from a one end portion to a middle portion with a predetermined width and from the middle The portion has a tapered width toward the other end portion; the glass substrate is immersed in a molten liquid prepared by heating a neutral salt containing a monovalent ion to 61 200403463 points or more for a predetermined period of time in order to be located on the glass substrate The opening portion of the film on the surface forms a high refractive index region of the waveguide; the film is removed from the glass substrate; an electric field is applied to the glass substrate so that the high refractive region is buried inside the glass substrate. 6. The manufacturing method of the optical amplifying device according to item 5 of the patent application range, wherein the time for immersing each part of the glass substrate in the molten liquid is adjusted according to the width of the opening of the film. 7、 一種光放大裝置之製造方法,其特徵在於: 在η、、加稀土類元素之玻璃基板表面形成膜,該膜設有 開口,其從一端部起以既定寬度直線狀延伸至中間部,且 從該中間部朝向另一端部具有呈錐形擴大之寬度; 藉由離子注入法,將稀土類元素摻雜在形成該膜之該 玻璃基板之該開口部份;7. A method for manufacturing an optical amplifying device, characterized in that: a film is formed on the surface of a glass substrate on which η, and a rare earth element is added, and the film is provided with an opening that extends linearly from a one end portion to a middle portion with a predetermined width, And has a tapered width from the middle portion toward the other end portion; doping a rare earth element into the opening portion of the glass substrate forming the film by an ion implantation method; 將該玻璃基板,浸在將含有一價離子之中性鹽加熱到 k點以上製成的溶融液中既定時間,以在位於該玻璃基板 表面之忒膜之開口部份,形成導波路之高折射率區域; «该玻璃基板除去該膜; 在忒玻璃基板上施加電場,而使該高折射區域埋入該 玻璃基板之内部。 8、 如申請專利範圍第7項之光放大裝置之製造方法 其中’係根據該膜開Π之寬度尺寸’來變化調節該玻璃 板各部份浸在該熔融液之時間。 9、 一種光放大裝置之製造方法,其特徵在於: 62 200403463 層; 错由風氧燃燒器’在矽基板之表面堆積形成下部包覆 藉由氫氧燃燒器,在該下部包覆 加稀+粞-主 復層之表面堆積形成添 '兀素及磷等而成之高折射率之核心層; 將形成有該下部包覆層及該核心層之爷 使該下部包覆層及該核心層透明化; "σ; 延伸❹1 '層之表面’形成從—端部以既定寬度直線狀 ^中間部、且從該中間部朝向另— 形寬度之光阻層; …有擴大成錐 將光阻層當作光軍,藉由反應性離子餘刻法,來除去 该先阻層覆蓋部份以外之核心層; 除去該光阻層,在呈右恐^切 士 ^欠遠之直線狀延伸、且呈錐形 擴大形狀之核心層的該下部包覆 _ 上 西 丨匕覆層表面,错由氫氧燃燒器 堆積形成上部包覆層; 將形成該上部包覆層之兮々I^ a 、 後層之5亥矽基板加熱,使該上部包覆 層也透明化。 10、-種光源裝置’其特徵在於,包含: 申請專利範圍第1項之光放大裝置; 戶、?、射光源’係用以射出两射光· 激發光源’係用以射出激發光; 照射光導入路’係用以腺兮H77 將6亥A射光源所射出之照射光 從該入口部導入該光放大導波路内;以及 激發光導入路,係用以將# j Λ將δ玄激發光源所射出之激發光 從該入口部導入該光放大導波路内; 63 200403463 透過該照射光導入路及該激發光導入路,將 激發光導入該光放大導波路内,藉由該激發光之作用, 该照射光放大從該出口部射出。 ; 11、 如申請專利範圍第10項之光源 六τ ,該昭 射光源係*射出既定波長f射光之雷射光源所構成。’、、、 12、 一種光源裝置,其特徵在於,包含: 光放大裝置’係以申請專利範圍帛新 製造者; 心各坆方法所 照射光源,係用以射出照射光; 激發光源,係用以射出激發光; 照射光導入路,係用以將該照射光源所射出之 從該入口部導入該光放大導波路内;以及 激叙光導入路,係用以將該激發光源所射 從該入口部導入該光放大導波路内; 激毛先 二該射光導入路及該激發光導入路,將照射光及 :§大導波路内’藉由該激發光之作用,將 该照射光放大從該出口部射出。 、 13、 如申請專利範圍第12項之光源裝置,丨中,續昭 射光源係由射出既定波長雷射光之雷射光源所構成。 14、 一種光治療裝置,其特徵在於,且備: 申請專利範圍第10〜13項中之任一光源裝置; 波長轉換盗,係用以將從該光源裝置之該 之照射光轉換為既定波長之治療用照射光;収 照射先學系統’係將以該波長轉換器所轉換之該照射 64 200403463 光導w到治療部位,來進行照射。 i5、—種曝光裝置,其特徵在於,具備·· 申請專利範圍第Π)叫3射之任—光源褒置’· 波長轉換器,將從該光源裝置之該出口部射 光轉換為既定波長之照射光; μ、 尤卓支持部,係 你符汉有既定曝光圖案之光罩 對象物保持部,係用以保持曝光對象物; ”照明光學系統,係將從該光源裝置之該出口部射出4 知射光照射在該光罩支持部所保持之光罩;以及、 投影光學系統, 罩後通過光罩之照射 曝光對象物。 係將透過該照明光學系統照射在該光 光,照射在該對象物保持部所保持之 Μ、一種光放大裝置,係在玻璃基板上設置以既定截 面形狀從人π部到出D部持續延伸之光放大導波路, 徵在於: 付 在該光放大導波路之後部,設有導波路型之光開關。 17、 如申請專利範圍第16項之光放大裝置,其中,在 該光放大導波路之後部,與其相鄰且並行延伸之光導波路 係形成在該玻璃基板上,· 該光開關,係進行控制,以將從該入口部射入到該光 放大導波路之被放大的光訊號,分開流至該光放大導波路 之後部或該光導波路。 18、 如申請專利範圍第I?項之光放大裝置,其中,該 光開關’係由方向性耦合器型開關所構成,該開關設置在 65 200403463 份先:::::之後部及該光導波路隔既定間隔之近接部 使用熱光效應、電光效應或聲光效應,將射入到該 光放大導波路之光訊號分成該光放大導波路 導波路,以進行流量控制。 …先 19、如申請專利範圍第16項之光放大裝置,其中,該 光開關係馬赫-齊德(Mach-Zender)型開關。 ”"The glass substrate is immersed in a molten solution prepared by heating a neutral salt containing monovalent ions to a temperature above k points for a predetermined period of time to form a high waveguide wave path at the opening portion of the diaphragm on the surface of the glass substrate. Refractive index region; «The glass substrate removes the film; an electric field is applied to the glass substrate, so that the high refractive region is buried inside the glass substrate. 8. The manufacturing method of the optical amplifying device according to item 7 of the scope of the patent application, wherein ′ is adjusted according to the width dimension of the film opening Π to adjust the time that each part of the glass plate is immersed in the molten liquid. 9. A method for manufacturing an optical amplifying device, characterized by: 62 200403463 layers; a wind-oxygen burner 'is stacked on the surface of a silicon substrate to form a lower cover, and a hydrogen-oxygen burner is used to cover the lower portion with a thinner +粞 -The surface of the main multi-layer is stacked to form a core layer of high refractive index formed by adding cellulose and phosphorus; the lower cladding layer and the core layer will be formed by the lower cladding layer and the core layer Transparency; "σ; Extending '1' the surface of the layer 'forms a photoresist layer with a predetermined width from the end to the middle ^ and from the middle to the other-a photoresist layer with a wide width; ... there is an enlarged cone to light The resist layer is used as a light army, and the core layer other than the part covered by the pre-resistance layer is removed by reactive ion etching method. The photoresist layer is removed and extends in a straight line that is right away ^ Chess ^ far away The lower cladding of the core layer with a tapered and enlarged shape _ Upper West 丨 The surface of the cladding layer is stacked by the hydrogen and oxygen burners to form the upper cladding layer; I ^ a that will form the upper cladding layer The silicon substrate of the rear layer is heated to cover the upper part. The layers are also transparent. 10. A kind of light source device 'characterized in that it includes: the light amplification device of the scope of patent application No. 1; the user, the light source, and the light source' are used to emit two light rays; the excitation light source is used to emit excitation light; The lead-in path is used to guide the radiation light emitted by the 6H-A light source into the light amplification waveguide from the entrance; and the excitation light lead-in path is used to direct # j Λ the δxuan excitation light source. The emitted excitation light is introduced into the optical amplification waveguide from the entrance; 63 200403463 transmits the excitation light into the optical amplification waveguide through the irradiation light introduction path and the excitation light introduction path, and acts by the excitation light. The irradiated light is emitted from the exit portion in an amplified manner. 11. If the light source six τ in item 10 of the scope of the patent application, the projected light source is composed of a laser light source that emits light of a predetermined wavelength f. ',,, 12, A light source device comprising: a light amplification device' is a new manufacturer based on the scope of patent application; the light source irradiated by each method is used to emit the irradiation light; the excitation light source is used Excitation light is emitted; an illumination light introduction path is used to introduce the emission light source into the light amplification waveguide from the entrance; and an excitation light introduction path is used to emit the excitation light source from the The entrance part is introduced into the light amplification waveguide; the laser light is first introduced into the light introduction path and the excitation light introduction path, and the irradiated light and: §in the large guided wave path are amplified by the action of the excitation light. The exit is shot. 13. If the light source device of the scope of application for patent No. 12 is used, the continuous light source is composed of a laser light source that emits laser light of a predetermined wavelength. 14. A light therapy device, characterized in that: and prepared: any light source device in the scope of application for patents Nos. 10 to 13; a wavelength conversion theft, which is used to convert the irradiated light from the light source device to a predetermined wavelength The treatment irradiation light; the radiation irradiation pre-learning system is to radiate the light guide w 2004200403463 converted by the wavelength converter to the treatment site. i5. An exposure device, which is characterized by: having any of the patent application scope No. Π) called "3 light emission"-a light source set-up; a wavelength converter that converts light emitted from the exit portion of the light source device to a predetermined wavelength; Illumination light; μ, You Zhuo support department, which is the mask object holding part of your Fuhan with a predetermined exposure pattern, is used to hold the exposure object; "The illumination optical system is emitted from the exit portion of the light source device 4 The known light is irradiated on the mask held by the mask support; and, the projection optical system, the object is exposed through the mask after the mask is exposed. The light is irradiated through the illumination optical system to the object and the object An optical amplifying device held by the object holding section is a light amplifying waveguide provided on a glass substrate and continuously extending from the human π section to the D section on a glass substrate. The characteristics are as follows: There is an optical switch of the guided wave path type. 17. The optical amplifying device according to item 16 of the scope of patent application, wherein the rear part of the optical amplifying guided wave path is adjacent to and parallel to the optical amplifying device. The Nozomi optical waveguide system is formed on the glass substrate. The optical switch is controlled so that the amplified optical signal that is incident from the entrance to the optical amplification waveguide is separately flowed to the optical amplification waveguide. 18. The optical amplifying device according to item I of the scope of patent application, wherein the optical switch 'is composed of a directional coupler type switch, which is set at 65 200403463 first :::: : The rear part and the near part of the optical waveguide with a predetermined interval use the thermo-optical effect, electro-optic effect, or acousto-optic effect to divide the optical signal incident on the optical amplifier waveguide into the optical amplifier waveguide for the flow control. ... 19. For example, the optical amplification device of the 16th scope of the patent application, in which the light opening is related to a Mach-Zender type switch. "&Quot; 2〇、一種光放大裝置之製造方法,其特徵在於:. 在冰加稀土類&素之玻璃基板表面形成帛,該膜設 從:端部到另-端側具有既定寬度延伸之帛丨開口、與在 該第1開口之該另-端部附近與該第1開口相鄰且並^延 伸到該另一端側之第2開口; 將該玻璃基板浸在將含有一價離子 < 中性鹽加熱至熔 點以上而製成的熔融液中既定時間’以在位於該玻璃基板_ 表面之該帛1及該第2開σ之部份形成作為光導波路之2 . 條高折射率區域; 從該玻璃基板除去該膜; 在該玻璃基板上施加電場,而使該2條高折射區域埋籲 入該玻璃基板之内部以形成光放大導波路及第2導波路; 在該光放大導波路之後部及該第2導波路上方之該玻 璃基板表面,使用光微影技術,形成熱光效應、電光效應. 或聲光效應用之元件來構成方向性耦合器。 · 21、一種光放大裝S之製造方法,其特徵在於: 玻璃基板表面形成膜,該膜設有從一端部到另一端側 以既定寬度延伸之第1開口、與在該第丄開口之該另一端 66 200403463 部附近與該第1開口相鄰且並行延伸到該另一端側之第2 開口; 在形成有該膜之該玻璃基板之該第1及該第2開口之 部份,藉由離子注入法來摻雜稀土類元素; 將该玻璃基板浸在將含有一價離子之中性鹽加熱至溶 點以上而製成的熔融液中既定時間,以在位於該玻璃基板 表面之該第1及該第2開口之部份形成作為光導波路之2 條高折射率區域; 從該玻璃基板除去該膜; 在該玻璃基板上施加電場,而使該2條高折射區域埋 入該玻璃基板之内部以形成光放大導波路及第2導波路; 在該光放大導波路之後部及該第2導波路上方之該玻 离基板表面,使用光微影技術,形成熱光效應、電光效應 或聲光效應用之元件來構成方向性耦合器。 22、一種光放大裝置之製造方法,其特徵在於: 藉由氫氧燃燒器,在矽基板表面堆積形成下部包覆層 藉由氫氧燃燒器,在該下部包覆層表面,堆積形成添 加稀土類元素及磷等之高折射率之核心層; ▲將形成該下部包覆層及該核心層之該矽基板加熱,使 該下部包覆層及該核心層透明化; 在該核心層表面,形成從一端部到另一端側以既定寬 度延伸之帛!綠層、與在該第i光阻層之該另—端部附 近與該第1光阻層相鄰且並行延伸至該另—端側之第2光 67 阻層; 將該光阻層作么止$ ,, 為先罩,猎由反應性離子蝕刻法,來除 去该光阻層覆1:邱八,、, 曰復風邛分以外的核心層; ’在具有殘留之第 藉由氫氧燃燒器, 除去該光阻層 下部包覆層表面, 1及第2核心層的該 堆積形成上部包覆贋 將形成該上部包霜> 匕後續之该矽基板加熱,使該上部包覆 層也透明化; 在以口亥第1核心層所形成之光放大導波路後部及以該籲 第2核心層所形成之第2導波路上方之該上部包覆層表面 ’使用光微影技術’形成熱光效應、電光效應或聲光效應 用之元件來構成方向性耦合器。 23、一種光源裝置,其特徵在於,具備: - 申請專利範圍第1項之光放大裝置; - 照射光源,係用以射出照射光; 激發光源,係用以射出激發光; 照射光導入路,係將該照射光源所射出之照射光從該 _ 入口部導入到該光放大導波路内; 激發光導入路,係將該激發光源所射出之激發光從該 入口部導入到該光放大導波路内;以及 , 開關動作控制裝置,係用以進行該光開關之動作控制 · 透過該照射光導入路及該激發光導入路’將照射光及 激發光導入到該光放大導波路内,藉由該激發光之作用, 68 200403463 將所放大之該照射光,根據該開關動作控制裝置所進行之 該光開關之動作控制,從該光放大導波路及該第2導波路 之出口端部分別射出。 24、 如申請專利範圍第23項之光源裝置,其中,該照 射光源係由射出既定波長雷射光之雷射光源所構成。” 25、 一種光源裝置,其特徵在於,具備: 光放大裝置,係以申請專利範圍第2〇項之製造方法所 製造者; 照射光源,係用以射出照射光; 激發光源,係用以射出激發光; …、射光導入路,係將該照射光源所射出之照射光從該 入口部導入至該光放大導波路内; 放lx光&入路,係將該激發光源所射出之激發光從該· 入口部導入至該光放大導波路内;以及 - 開關動作控制裝置,係用以進行該光開關之動作控制 , 透過該照射光導入路及該激發光導入路,將照射光及 激^光‘入到忒光放大導波路内,將藉由該激發光之作用 所放大之該照射光,根據該開關動作控制裝置所進行之該 光開關之動作控制,從該光放大導波路及該第2導波路之 出口端部分別射出。 26、 如申請專利範圍第25項之光源裝置,其中,該照 射光源係由射出既定波長雷射光之雷射光源所構成。 27、 一種光治療裝置,其特徵在於,具備: 69 200403463 申請專利範圍第23〜26項中之任一光源裝置; ”波長轉換器,係用以將從該光源裝置之該出口部射出 之照射光轉換為既定波長之治療用照射光,·以及 照射光學系統,係將藉由該波長轉換器所轉換之該照 射光導引到治療部位,來進行照射。 28、一種曝光裝置,其特徵在於,具備·· ’ 申請專利範圍第10〜13項中之任一光源裝置;. 波長轉換器,係用以將從該光源裝置之該出口部射出 之妝射光轉換為既定波長之照射光; 光軍支持部,剌以保持設有既定曝光圖案之光罩; 對象物保持部,係保持曝光對象物; 照明光學系統,係將從該光源裝置之該出口部射出之 照射光照射於保持在該光罩支持部之光罩;以& 投影光學系統’係將透過該照明光學系統照射該光罩 罩之照射光’照射在該對象物保持部所保持之曝 元對象物。 ^ 種光放大裂置,係在玻璃基板上設置以既定截_ 面形狀延伸之光放大導波路而構成,其特徵在於: 光放大導波路,具備1條從入口部延伸至第1中間 S入口側導波路,與在該第1中間部從該入口側導波路· 刀4而出、向出口部延伸的複數條分歧導波路。 · 入30、如申請專利範圍第29項之光放大裝置,其中,該 :導波路、该分歧導波路及該出口側導波路具有能保 符早杈之尺寸。 70 200403463 31、 如申請專利範圍第29項之光放大裝置,其中,該 複數“刀歧‘波路中至少2條係在第2中間部匯合,成為 1條出口側導波路延伸至該出口部。 32、 如申請專利範圍第31項之光放大裝置,其中,該 1 $波路、该分歧導波路及該出口側導波路具有能保 持單模之尺寸。 ^ ,=、如中請專利範圍第29〜31項中任―項之光放大裝 ^ :中,係在該玻璃基板,設置用來導入激發光的激發 Γ波路’與將通過該激發光用導波路所供應之激發光 Μ刀歧‘波路内加以合波的合波機構。 34'如中請專利範圍第㈣之光放大裝置,其中,該 口波機構係由分波多工器所構成。 置,3:中如申請專利範圍第⑼〜犯項中任一項之光放大裝_ ’該人口側導波路、該分歧導波路及該出口側導、 添加有稀土類元素之玻璃基板内形成之高折射 該入口 “道申明專利乾圍第Μ項之光放大裝置,其中,從 部份,^波路及該分歧導波路之入口側到該合波機構之 折射區域Μ未添加稀土類元素之一般破璃基板中形成之高 口側部份及口而:該分歧導波路之該合波機構起的* 玻壤基板内所妒成側^波路,則係由添加有稀土類元素之 乂成之鬲折射區域所構成。 該入口側導申:專利辄圍第34項之光放大裝置’其中,從 及該分歧導波路之人口側到該合波機構之 71 200403463 部份,係由未添加稀土類元素之一般玻璃基板中形成之高 折射區域所構成,而從該分歧導波路之該合波機構起的出 口側部份及該出口側導波路’則係由添加有稀土類元素之 玻璃基板内形成之高折射區域所構成。 38、 一種光放大裝置,係使用放大用光纖來構成,其 特徵在於: 該放大用光纖係具備:丨條入口部延伸至第丨中間部 之入口側光纖’與在該帛丨中間部從該入口側光纖分歧而 出、向出口部延伸之複數條分歧光纖。 · 39、 如申請專利範圍第38項之光放大裝置,其中,該 後數條分歧光纖中之至少2條係在第2中間部合波,成為 1條出口側光纖延伸至該出口部。 4〇、如申請專利範圍第38項之光放大裝置,其中,該— 入口側光纖、該分歧光纖及該出口側光纖具有能保持單模k 之尺寸。 41、如申請專利範圍第39項之光放大裝置,其中,該 入口側光纖、該分歧光纖及該出口側光纖具有能保持 ❿ 之尺寸。 、 壯42、如申請專利範圍第38〜40項中之任一項之光放大 衣置,其中,設有用來導入激發光的激發光用光纖,與連· 接忒激發光用光纖與該分歧光纖、用來將通過該激發光用— 光纖所供應之激發光合波在該分歧光纖内的波機構/ 人43、如申請專利範圍第42項之光放大裝置,其中,該 ° ;皮機構係由分波多工器所構成。 72 200403463 置,4复4、如中請專利範圍第38〜則中任一項之光放大裝 其中,5亥入口側光纖、該分歧光纖及該出口側光纖係 添加稀土類元素之光纖所構成。 45、如中請專利範圍第42項之光放大裝置,其中,從 以入口侧光纖及該分歧光纖之入口側到該合波機構之部份 朵係由未添加稀土類元素之一般光纖所構成,而從該分崠 纖之該合波機構起的出口側部份及該出口側光纖則係由 添加稀土類元素之光纖所構成。20. A method for manufacturing an optical amplifier device, characterized in that: 帛 is formed on the surface of an ice-added rare earth & element glass substrate, and the film is provided with a predetermined width extending from the end to the other-end side 丨An opening, and a second opening adjacent to the first opening near the other-end portion of the first opening and extending to the other end side; immersing the glass substrate in a solution containing monovalent ions < A high-refractive-index region formed as a light-guiding wave path at a predetermined time in the molten liquid prepared by heating the above-mentioned melting point above the melting point at a portion of the 帛 1 and the second opening σ located on the surface of the glass substrate _; Removing the film from the glass substrate; applying an electric field on the glass substrate, and embedding the two high-refractive regions inside the glass substrate to form a light amplification waveguide and a second waveguide; and on the light amplification waveguide The rear surface and the surface of the glass substrate above the second guided wave path use a photolithography technique to form a thermo-optic effect, an electro-optical effect, or an acousto-optic effect to form a directional coupler. 21. A method for manufacturing an optical amplifying device S, characterized in that: a film is formed on the surface of the glass substrate, and the film is provided with a first opening extending from a one end portion to the other end side with a predetermined width, and the first opening in the second opening. The other end 66 200403463 is adjacent to the first opening and parallel to the second opening extending to the other end side; in the portion of the first and second openings of the glass substrate on which the film is formed, Ion implantation method for doping rare earth elements; immersing the glass substrate in a molten liquid prepared by heating a neutral salt containing monovalent ions above a melting point for a predetermined period of time on the glass substrate surface; 1 and the part of the second opening form two high refractive index regions as optical waveguides; remove the film from the glass substrate; apply an electric field on the glass substrate to embed the two high refractive regions into the glass substrate Inside, an optically amplified waveguide and a second waveguide are formed; on the surface of the glass substrate behind the optically amplified waveguide and above the second waveguide, a photolithography technique is used to form a thermo-optic effect and an electro-optic effect The acousto-optic effect element is constituted by a directional coupler. 22. A method of manufacturing an optical amplifier device, characterized in that: a lower cladding layer is formed on the surface of a silicon substrate by a hydrogen-oxygen burner, and an added rare earth is deposited on the surface of the lower cladding layer by a hydrogen-oxygen burner. Element-like elements, phosphorus and other high-refractive core layers; ▲ heating the silicon substrate forming the lower cladding layer and the core layer to make the lower cladding layer and the core layer transparent; on the surface of the core layer, Form a rafter that extends from one end to the other end with a predetermined width! A green layer, and a second photo67 resist layer adjacent to the first photoresist layer adjacent to the other end of the i-th photoresist layer and extending in parallel to the other end; the photoresist layer is used as What is the first mask, the reactive ion etching method is used to remove the photoresist layer coating 1: Qiu Ba ,, said, the core layer other than Fufeng Fengfen; An oxygen burner removes the surface of the lower cladding layer of the photoresist layer, and the accumulation of the first and second core layers forms the upper cladding. The upper cladding frost will be formed. The subsequent heating of the silicon substrate causes the upper cladding. The layer is also transparent; the photolithography technique is used on the surface of the upper cladding layer at the rear of the light amplification waveguide formed by the first core layer and above the second waveguide formed by the second core layer. 'The elements used to form thermo-optic, electro-optical, or acousto-optic effects constitute a directional coupler. 23. A light source device, comprising:-the light amplifying device of the first patent application range;-an irradiation light source for emitting the irradiation light; an excitation light source for emitting the excitation light; an introduction path of the irradiation light, The irradiated light emitted by the irradiated light source is introduced into the optical amplification waveguide from the _ entrance portion; the excitation light introduction path is the excited light radiated by the excitation light source is introduced from the entrance portion to the optical amplification waveguide. And the switching operation control device is used to control the operation of the optical switch. The irradiation light and the excitation light are introduced into the light amplification waveguide through the irradiation light introduction path and the excitation light introduction path. The function of the excitation light, 68 200403463, respectively, according to the operation control of the optical switch performed by the switching operation control device, the irradiated light is respectively emitted from the exit end of the optical amplification waveguide and the second waveguide . 24. The light source device according to item 23 of the patent application scope, wherein the illumination light source is composed of a laser light source that emits laser light of a predetermined wavelength. 25. A light source device, comprising: a light amplifying device manufactured by the manufacturing method of patent application No. 20; an irradiation light source for emitting irradiation light; an excitation light source for emitting light Excitation light; ..., the light introduction path, which is used to guide the irradiation light emitted by the irradiation light source into the light amplification waveguide from the entrance; put the lx light & path, which is the excitation light emitted by the excitation light source Is introduced into the optical amplification waveguide from the entrance; and-a switch operation control device for controlling the operation of the optical switch, and transmits the irradiation light and the excitation light through the irradiation light introduction path and the excitation light introduction path ^ Light 'enters the light-guide amplification path, and the irradiated light amplified by the action of the excitation light will amplify the light-guide path and the light according to the operation control of the optical switch by the switching operation control device. The exit ends of the second guided wave path are respectively emitted. 26. The light source device according to item 25 of the patent application scope, wherein the irradiation light source is a device that emits laser light of a predetermined wavelength. 27. A light therapy device, comprising: 69 200403463 any one of the light source devices in the scope of patent application Nos. 23 to 26; "wavelength converter" is used to convert the light source device from the light source device. The irradiation light emitted from the exit portion is converted into a therapeutic irradiation light of a predetermined wavelength, and the irradiation optical system guides the irradiation light converted by the wavelength converter to a treatment site for irradiation. 28. An exposure device comprising: a light source device according to any of items 10 to 13 of the scope of patent application; a wavelength converter for emitting makeup light emitted from the exit portion of the light source device The irradiation light converted into a predetermined wavelength; the light army support unit to hold a mask provided with a predetermined exposure pattern; the object holding unit to hold the exposure object; the illumination optical system from the exit portion of the light source device The emitted irradiation light is irradiated onto the mask held by the mask support portion; & the projection optical system is `` irradiated by the illumination optical system and irradiated with the mask cover by the illumination light '' to the object held by the object holding portion. Exposure object. ^ This type of optical amplification split is formed by setting a light amplification waveguide with a predetermined cross-section shape on a glass substrate. It is characterized in that: the light amplification waveguide has one extending from the entrance to the first middle S entrance The side waveguide is a plurality of branched waveguides extending from the inlet-side waveguide 4 and the blade 4 at the first intermediate portion and extending to the exit portion. · In 30, the optical amplifier device according to item 29 of the patent application scope, wherein: the guided wave path, the divergent guided wave path and the exit-side guided wave path have a size that can guarantee the early branch. 70 200403463 31. For example, the optical amplifying device of the 29th scope of the patent application, wherein at least two of the plurality of "knife-discussion" wave paths are merged at the second middle portion and become an exit-side guided wave path extending to the exit portion. 32. For example, the optical amplifying device of the 31st scope of the patent application, wherein the 1 $ wave path, the divergent guided wave path and the exit-side guided wave path have a size capable of maintaining a single mode. ^, =, Please refer to the patent scope 29 Any of the ~ 31 items-the light amplification device of item ^: In the glass substrate, an excitation Γ wave path 'for introducing excitation light' and an excitation light 'M knife' that will be supplied through the excitation light guide wave path are provided. A multiplexing mechanism for multiplexing is added in the wave path. 34 'The optical amplification device of the second scope of the patent application, wherein the mouth wave mechanism is composed of a demultiplexing multiplexer. ~ Amplification of light of any one of the crimes _ 'The high refractive index formed in the glass side of the population side guide, the divergent guide and the exit side guide, and the glass substrate with rare earth elements added. Light amplification of item M The device, from the entrance side of the part, the wave path and the divergent guided wave path to the refracting area of the multiplexing mechanism M, the high mouth side part and mouth formed in the general glass-breaking substrate without adding rare earth elements: the The side-by-side wave path in the glassy soil substrate from the multiplexing mechanism of the divergent guided wave path is composed of a refraction region formed by the addition of a rare earth element. The entrance side application: Patent No. 34 of the light amplification device 'Among them, from the population side of the divergent waveguide to 71 200403463 of the multiplexing mechanism, it is a general glass substrate without added rare earth elements The high-refractive region formed in the middle, and the exit-side portion and the exit-side waveguide from the multiplexing mechanism of the divergent waveguide are high-refractive regions formed in the glass substrate with the rare earth element added. Made up. 38. An optical amplifying device configured by using an amplifying optical fiber, characterized in that: the amplifying optical fiber is provided with: an inlet-side optical fiber extending from an entrance portion to an intermediate portion; A plurality of branched optical fibers that exit from the entrance side and extend toward the exit portion. 39. For example, the optical amplification device of the 38th scope of the patent application, wherein at least two of the later branched optical fibers are multiplexed at the second middle portion, and become an exit-side optical fiber extending to the exit portion. 40. The optical amplifying device according to item 38 of the scope of the patent application, wherein the entrance-side optical fiber, the branch optical fiber, and the exit-side optical fiber have a size capable of maintaining a single mode k. 41. The optical amplifying device according to item 39 of the patent application scope, wherein the entrance-side optical fiber, the branching optical fiber, and the exit-side optical fiber have a size capable of maintaining ❿. Zhuang 42. The optical amplification device according to any one of the 38th to 40th scope of the patent application, wherein an optical fiber for excitation light for introducing excitation light is provided, and an optical fiber for connection and connection with the excitation light is different from this. An optical fiber, a wave mechanism / person for using the excitation light supplied by the optical fiber to combine the excitation light supplied in the optical fiber with the divergent fiber 43, such as the optical amplification device of the 42nd patent application scope, wherein Consists of a demultiplexer. 72 200403463, 4 sets of 4, such as the optical amplification device of any one of the patent scope 38 ~, which is composed of the entry side optical fiber, the branch fiber and the exit side optical fiber are added with rare earth elements added optical fiber . 45. The optical amplifying device according to item 42 of the patent, in which a portion of the fiber from the entrance-side optical fiber and the entrance side of the divergent optical fiber to the multiplexing mechanism is composed of a general optical fiber without adding a rare earth element. The exit-side part and the exit-side optical fiber from the multiplexing mechanism of the branched fiber are composed of an optical fiber added with a rare earth element. 46、一種光源裝置,其特徵在於,具備: 申請專利範圍第29項之光放大裝置; 照射光源,係用以射出照射光;以及 激發光源,係用以射出激發光; 將來自該照射光源之照射光從前述入口部導入到該光 放大導波路内’將來自該激發光源之激發光導入到該入口 邛或從該激發光用導波路導入到該光放大導波路内,在該46. A light source device comprising: a light amplifying device according to item 29 of the scope of patent application; an irradiation light source for emitting irradiation light; and an excitation light source for emitting excitation light; The irradiated light is introduced into the light amplification waveguide from the entrance portion. 'Excitation light from the excitation light source is introduced into the entrance. 光放大導波路内’藉由該激發光之作用將該照射光放大, 從該出口部射出。 47、 如申請專利範圍第46項之光源裝置,其中,該照 射光源係由射出既定波長雷射光之雷射光源所構成。 48、 一種光源裝置’其特徵在於,具備: 申請專利範圍第38項之光放大裝置; 照射光源,係用以射出照射光;以及 激發光源,係用以射出激發光; 將來自該照射光源之照射光從該入口部導入到該放大 73 200403463 用光纖内’將來自該激發光源之激發光導入到該入口部或 從激發光用光纖導入到放大用光纖内,在該放大用光纖内 ,藉由該激發光之作用將該照射光放大,從該出口部射出 少 %卞个」靶叫π ^ 7〜70杯衣罝,丹T,該照 射光源係由射出既定波長雷射光之雷射光源所構$。 · 50 種光治療裝置,其特徵在於,具備: 申請專利範圍第46〜49項中之任一光源裝置; 波長轉換器,係將從該光源裝置之該出口部射出之昭 射光轉換為既定波長之治療用照射光;以及 光導系統,係將以該波長轉換器所轉換之該照射 先V引到>口療部位,來進行照射。 η、一種曝光裝置,其特徵在於,具備·· :請專利範圍第46〜49項中之任-光源裝置; 波長轉換器,係將從該光源裝置之〃 射光轉換為既定波長之照射光; 人 彳射出之照 ==二::保持設“定曝先圖索之先罩; 對象物.· 矛、财σ亥波長轉換哭 照射=持在該光罩支持部之光罩:及轉換之該照射光 ”光予系統’係將透過該照明光學孕轉 後通過光罩之照射光,照射 ::系統照射該光罩 對象物。 物保持部所保持之曝光 52、—種光放大裝置,其特徵在於: 74 200403463 具備·在玻璃基板上具有既定截面形丨 &所形成的光放 大導波路,與設置在該光放大導波路之屮η & 出口部的合分波機 構; 當訊號光及激發光從該光放大導波路之入口部射入到 該光放大導波路内時,該合分波機構即將通過該光放大導 波路内被放大之該訊號光與該激發光加以分離,從該出口_ 部射出; 其設有用以反射被該合分波機構分離射出之該激發光 的激發光反射機構,將被該激發光反射機構所反射之該激馨 發光’透過该合分波機構從該出口部射入到該光放大導波 路内。 53、 如申請專利範圍第52項之光放大裝置,其中,該 合分波機構係由分波多工器所構成。 ~ 54、 如申請專利範圍第52項之光放大裝置,其中,該、 光放大導波路具有能保持單模之尺寸。 55、 如申請專利範圍第52項之光放大裝置,其中,該 激發光反射機構係由光學反射鏡所構成。 _ 56、 如申請專利範圍第52項之光放大裝置,其中,該 激發光反射機構係由反射型之布拉格(Bragg)繞射光栅所構 成。 57、 一種光放大裝置,其特徵在於: 具備:在玻璃基板上具有既定截面形狀而形成的光放 大導波路,與設在該光放大導波路之入口部的弟1 $刀波 機構,與設在該光放大導波路之出口部的第2合分波機構 75 200403463 該第1合分波機構係將從外部射入之訊號光從該入口 部射入該光放大導波路内’該第2合分波機構係將從外部 射入之激發光從該出口部射入該光放大導波路内; 該第1合分波機構,係將透過該第2合分波機構從該 出口部射入該光放大導波路内之該激發光,透過與該訊號 光之射入路徑不同的其他路徑,從該入口部向外部射出; 該第2合分波機構,係將透過該第i合分波機構從該 ▲入口部射入該光放大導波路内被放大之該訊號光,透過與馨 -亥激發光之射入路徑不同的其他路徑,從該出口部向外部 射出; 其設有用以反射被該第丨合分波機構分離射出之該激 發光的激發光反射機構,將被該激發光反射機構所反射之- 該激發光,透過該第丨合分波機構從該入口部射入該光放、 大導波路内。 58、 如申請專利範圍第57項之光放大裝置,其中,該 第1合为波機構及該第2合分波機構係由分波多工器所構 _ 成。 59、 如申請專利範圍第57項之光放大裝置,其中,該 光放大導波路具有能保持單模之尺寸。 , 60、 如申請專利範圍第57項之光放大裝置,其中,該* 激發光反射機構係由光學反射鏡所構成。 61、 如申請專利範圍第57項之光放大裝置,其中,該 激發光反射機構係由反射型之布拉格繞射光栅所構成。 76 200403463 62、 一種光放大裝置,其特徵在於: 具備1條放大用光纖、與設在該放大用光纖之出口部 的合分波機構; 當訊號光及激發光從該放大用光纖之入口部射入該放 大用光纖内時’該合分波機構係將通過該放大用光纖内_ 放大之該訊號光與該激發光分離,從該出口部射出; 其設有用以反射被該合分波機構分離射出之該激發光 的激發光反射機構,將被該激發光反射機構所反射之該激 發光’透過该合分波機構從該出口部射入到該光放大導波 _ 路内。 63、 如申請專利範圍第62項之光放大裝置,其中,該 合分波機構係由分波多工器所構成。 64、 如申請專利範圍第62項之光放大裝置,其中,該· 放大用光纖具有能保持單模之尺寸。 - 65、 如申請專利範圍第62項之光放大裝置,其中,該 激發光反射機構係由光學反射鏡所構成。 66、 如申請專利範圍第62項之光放大裝置,其中,該 _ 激發光反射機構係由反射型之布拉格繞射光栅所構成。 67、 一種光放大裝置,其特徵在於: 具備:1條放大用光纖,設在該放大用光纖入口部的· 第1合分波機構,及設在該放大用光纖出口部的第2合分· 波機構; 該第1合分波機構係將從外部射入之訊號光從該入口 部射入該放大用光纖内,而該第2合分波機構則係將從外In the light amplification waveguide, the irradiation light is amplified by the action of the excitation light, and is emitted from the exit portion. 47. The light source device according to item 46 of the patent application scope, wherein the illumination light source is composed of a laser light source that emits laser light of a predetermined wavelength. 48. A light source device is characterized in that it includes: a light amplifying device of the 38th scope of the patent application; an irradiation light source for emitting the irradiation light; and an excitation light source for emitting the excitation light; The irradiated light is introduced from the entrance portion into the amplification 73 200403463 into the optical fiber 'to introduce the excitation light from the excitation light source into the entrance portion or from the excitation light fiber to the amplification optical fiber. The irradiation light is amplified by the action of the excitation light, and a small percentage of the target is emitted from the exit portion. The target is called π ^ 7 ~ 70 cups of clothing, Dan T. The irradiation light source is a laser light source that emits laser light of a predetermined wavelength. Constructed $. · 50 types of light therapy devices, which are characterized by: having any one of the light source devices in the scope of patent applications 46 to 49; a wavelength converter that converts the projected light emitted from the exit portion of the light source device to a predetermined wavelength The irradiation light for treatment; and the light guide system, the radiation converted by the wavelength converter is first introduced to the > oral treatment site for irradiation. η, an exposure device, characterized by having:-any of the patent scope 46 to 49-a light source device; a wavelength converter that converts the irradiated light from the light source device into irradiated light of a predetermined wavelength; Photo shot by a human being == 2: Keep the first mask to set the exposure first; the target object. · Spear, sigma, wavelength conversion, crying = mask held on the support part of the mask: and The "light to the system" of the illumination light is the illumination light that passes through the reticle after passing through the illumination optics, and irradiates: the system irradiates the reticle object. The exposure 52 held by the object holding section is an optical amplifying device characterized by: 74 200403463: a light amplifying waveguide formed by a predetermined cross-sectional shape on a glass substrate and a light amplifying waveguide provided thereon屮 η & multiplexing and demultiplexing mechanism at the exit; when signal light and excitation light are incident from the entrance of the optical amplification waveguide into the optical amplification guide, the multiplexing and demultiplexing mechanism is about to pass through the optical amplification guide The amplified signal light in the wave path is separated from the excitation light and exits from the exit; it is provided with an excitation light reflection mechanism for reflecting the excitation light separated and emitted by the multiplexing / demultiplexing mechanism, and will be excited by the excitation light. The exciting light emitted by the reflection mechanism is transmitted through the multiplexing and demultiplexing mechanism from the exit to the light amplification waveguide. 53. The optical amplifying device according to item 52 of the patent application scope, wherein the multiplexing and demultiplexing mechanism is composed of a demultiplexing multiplexer. ~ 54. The optical amplifier device according to item 52 of the patent application scope, wherein the optical amplifier waveguide has a size capable of maintaining a single mode. 55. The light amplifying device according to item 52 of the patent application scope, wherein the excitation light reflection mechanism is composed of an optical mirror. _56. For example, the light amplifying device according to item 52 of the patent application scope, wherein the excitation light reflection mechanism is composed of a reflection type Bragg diffraction grating. 57. An optical amplifying device, comprising: a light amplifying waveguide formed with a predetermined cross-sectional shape on a glass substrate; and a $ 1 knife wave mechanism provided at an entrance of the optical amplifying waveguide; and The second multiplexing / demultiplexing mechanism 75 at the exit portion of the optical amplification waveguide 75 200403463 The first multiplexing / demultiplexing mechanism is to input signal light from the outside into the optical amplification waveguide from the entrance portion. The second The multiplexing / demultiplexing mechanism is used to inject the excitation light from the outside into the optical amplification waveguide through the exit section; the first multiplexing / demultiplexing mechanism is to enter the exit section through the second multiplexing / demultiplexing mechanism The excitation light in the optical amplification waveguide passes through another path different from the incident path of the signal light and exits from the entrance to the outside; the second multiplexing / demultiplexing mechanism will pass through the i-th multiplexing / demultiplexing wave The mechanism enters the signal light amplified in the light amplification waveguide from the ▲ entrance portion, and exits from the exit portion to the outside through another path different from the incident path of the Xin-Hai excitation light; it is provided for reflection The first combined demultiplexer Excitation light reflecting means separated emission of the excitation light will be the excitation light reflecting means being reflective of - the excitation light, the optical amplifier from the inlet portion enters through the second Shu and demultiplexing means, a large waveguide. 58. For example, the optical amplifying device according to item 57 of the scope of patent application, wherein the first combining wave mechanism and the second combining / demultiplexing mechanism are constituted by a demultiplexer. 59. The light amplifying device according to item 57 of the scope of patent application, wherein the light amplifying waveguide has a size capable of maintaining a single mode. 60. The light amplifying device according to item 57 of the application, wherein the * excitation light reflection mechanism is composed of an optical mirror. 61. The light amplifying device according to item 57 of the patent application scope, wherein the excitation light reflection mechanism is composed of a reflective Bragg diffraction grating. 76 200403463 62. An optical amplifying device, comprising: an amplifying optical fiber and a multiplexing / demultiplexing mechanism provided at an exit portion of the amplifying optical fiber; and when signal light and excitation light pass through an entrance portion of the amplifying optical fiber When entering the optical fiber for amplification, the multiplexing / demultiplexing mechanism will separate the signal light amplified from the excitation light through the optical fiber for amplification and exit from the exit; it is provided to reflect the multiplexed and demultiplexed wave The excitation light reflection mechanism that separates the excitation light emitted by the mechanism passes the excitation light reflected by the excitation light reflection mechanism through the multiplexing and demultiplexing mechanism and enters the light amplification guide wave_ from the exit portion. 63. The optical amplifying device according to item 62 of the patent application scope, wherein the multiplexing / demultiplexing mechanism is composed of a demultiplexer. 64. The optical amplifying device according to item 62 of the patent application scope, wherein the amplifying optical fiber has a size capable of maintaining a single mode. -65. The light amplifying device according to item 62 of the patent application scope, wherein the excitation light reflection mechanism is composed of an optical mirror. 66. The light amplifying device according to item 62 of the patent application scope, wherein the excitation light reflection mechanism is composed of a reflective Bragg diffraction grating. 67. An optical amplifying device, comprising: a first amplifying optical fiber, a first multiplexing / demultiplexing mechanism provided at the amplifying optical fiber entrance portion, and a second multiplexing / demultiplexing mechanism provided at the amplifying optical fiber exit portion · Wave mechanism; the first multiplexing / demultiplexing mechanism is used to input the signal light from the outside into the amplification optical fiber from the entrance, and the second multiplexing / demultiplexing mechanism is from the outside 77 200403463 部射入之激發光從該出口部射入該放大用光纖内; 該第1合分波機構,係將透過該第2合分波機構從該 出口部射入該放大用光纖内之該激發光,透過與該訊號光 之射入路徑不同的其他路徑,從該入口部向外部射出; 该第2合分波機構,係將透過該第1合分波機構從該 入口部射入該放大用光纖内被放大之該訊號光,透過與轉 激發光之射入路徑不同的其他路徑,從該出口部向外部射 出; 其設有用以反射被該第1合分波機構分離射出之該激 馨 發光的激發光反射機構,將被該激發光反射機構所反射之 該激發光,透過該第1合分波機構從該入口部射入該光放 大用光纖内。 68、如申請專利範圍第67項之光放大裝置,其中,該, 第1合分波機構及該第2合分波機構係分別由分波多工器, 所構成。 69、 如申請專利範圍第67項之光放大裝置,其中,該 放大用光纖具有能保持單模之尺寸。 70、 如申請專利範圍帛67項之光放大裝置,其中,誃 激發光反射機構係由光學反射鏡所構成。 X 71、 如申請專利範圍第67項之光放大裝置,其中, 激發光反射機構係由反射型之布拉袼繞射光栅所構成。μ 72、 一種光源裝置,其特徵在於,具備·· 申請專利範圍第52項之光放大裝置; 照射光源,係用以射出照射光;以及 78 200403463 激兔光源,係用以射出激發光; 將來自該照射光源之照射光及來自該激發光源之激發 光從該入口部導入該光放大導波路内,在該光放大導波路 内,藉由該激發光之作用將該照射光放大,且藉由該合分 波機構來加以分離,從該出口部射出。 73、 如申請專利範圍第72項之光源裝置,其中,該照 射光源係由射出既定波長雷射光之雷射光源所構成。 74、 一種光源裝置,其特徵在於,具備·· 申請專利範圍第57項之光放大裝置; 照射光源,係用以射出照射光;以及 激發光源,係用以射出激發光; 將來自該照射光源之照射光透過該帛1合分波機構從 名入口部導入该光放大導波路内,且將來自該激發光源之_ 激發光透過該第2合分波機構從該出口部導入該光放大導· 波路内’在該光放大導波路内,藉由該激發光之作用將該 肊射光放大’且藉由該第2合分波機構加以分離,從該出 口部射出。 75、 如申請專利範圍第74項之光源裝置,其中,該照 射光源係由射出既定波長雷射光之雷射光源所構成。 76、 一種光源裝置,其特徵在於,具備·· 申明專利範圍第62項之光放大裝置; 照射光源,其係射出照射光;以及 激發光源,其係射出激發光; 將來自該照射光源之照射光及來自該激發光源之激發 79 200403463 光從該入口部導入該放大用光纖内,在該放大用光纖内, 藉由該激發光之作用將該照射光放大,且藉由該第2合分 波機構加以分離,從該出口部射出。 77、 如申請專利範圍第76項之光源裝置,其中,該照 射光源係由射出既定波長雷射光之雷射光源所構成。 78、 一種光源裝置,其特徵在於,具備·· 申請專利範圍第67項之光放大裝置; 照射光源’係用以射出照射光;以及 激發光源,係用以射出激發光; · 將來自A ^射光源之照射光透過該第1合分波機構從 該入口部導入該放大用光纖内,且將來自該激發光源之激 發光透過該第2合分波機構從該出口部導人該放大用光纖 内,在該放大用光纖内,藉由該激發光之作用將該照射光- 放大’且藉由該第2合分波機構加以分離,從該出口部射. 出。 79、 如申請專利範圍第78項之光源裝置,其中,該照 射光源係由射出既定波長雷射光之雷射光源所構成。 φ 8〇、一種光治療裝置’其特徵在於,具備: 申請專利範圍第72〜79項中之任一光源裝置; 波長轉換器,係將從該光源裝置之該出口部射出之照‘ 射光轉換為既定波長之治療用照射力;以及 · 照射光學系統,係將被該波長轉換器所轉換之該照射 光導引到治療部位,來進行照射。 81、一種曝光裝置’其特徵在於,具備: 80 200403463 申請專利範圍第72〜79項中之 波長轉換器,係用以腺//Λ 原扁置, 、 將攸该光源裝置之爷中口邻射出 之照射光轉換為㈣波長之照射光;^出口 #射出 ==:,係用以保持設有既定曝光圖案之光罩; 象保持部,係用以保持曝光對象物; ,¾明先學系統,係將被該波長轉換器光 知射在該以支持部所保持之光罩;以及 、’、、、射大 投影光學系統,係將 後通過光罩之日… H、、月先予糸統照射該光罩 對象物。A射先’照射該對象物保持部所保持之曝光 拾壹、圖式: 如次頁77 200403463 The excitation light incident from the exit part enters the amplification fiber; the first multiplexing / demultiplexing mechanism will pass through the second multiplexing / demultiplexing mechanism to enter the amplification fiber from the exit section. The excitation light passes through another path different from the incident path of the signal light, and exits from the entrance to the outside; the second multiplexing / demultiplexing mechanism is to be incident from the entrance through the first multiplexing / demultiplexing mechanism. The signal light amplified in the amplifying optical fiber passes through another path different from the incident path of the converted excitation light and exits from the exit to the outside; it is provided to reflect the light emitted by the first multiplexing / demultiplexing mechanism and separated. The excitation light reflection mechanism that emits the excitation light transmits the excitation light reflected by the excitation light reflection mechanism through the first multiplexing and demultiplexing mechanism and enters the optical fiber for light amplification from the entrance portion. 68. The optical amplifying device according to item 67 of the scope of patent application, wherein the first multiplexing and demultiplexing mechanism and the second multiplexing and demultiplexing mechanism are each composed of a demultiplexer. 69. The optical amplifying device according to item 67 of the application, wherein the amplifying optical fiber has a size capable of maintaining a single mode. 70. For the light amplifying device with a scope of 帛 67, the 专利 excitation light reflection mechanism is composed of an optical mirror. X 71. The light amplifying device according to item 67 of the patent application scope, wherein the excitation light reflection mechanism is composed of a reflection type Bragg diffraction grating. μ 72. A light source device comprising: a light amplifying device according to item 52 of the scope of patent application; an irradiation light source for emitting irradiation light; and 78 200403463 a rabbit light source for emitting excitation light; The irradiation light from the irradiation light source and the excitation light from the excitation light source are introduced into the light amplification waveguide from the entrance portion, and in the light amplification waveguide, the irradiation light is amplified by the action of the excitation light, and It is separated by the multiplexing / demultiplexing mechanism and emitted from the exit portion. 73. The light source device according to item 72 of the patent application scope, wherein the illumination light source is composed of a laser light source that emits laser light of a predetermined wavelength. 74. A light source device comprising: a light amplifying device according to item 57 of the scope of patent application; an irradiation light source for emitting irradiation light; and an excitation light source for emitting excitation light; The irradiated light passes through the 帛 1 multiplexing and demultiplexing mechanism and is introduced into the optical amplification waveguide from the entrance portion, and the _excitation light from the excitation light source is transmitted through the second multiplexing and demultiplexing mechanism to the optical amplification guide from the exit portion. In the wave path 'in the light amplification guide wave path, the eruption light is amplified by the action of the excitation light' and is separated by the second multiplexing / demultiplexing mechanism and emitted from the exit portion. 75. The light source device according to item 74 of the patent application scope, wherein the illumination light source is composed of a laser light source that emits laser light of a predetermined wavelength. 76. A light source device comprising: a light amplifying device according to item 62 of the stated patent scope; an irradiating light source that emits irradiated light; and an excitation light source that emits irradiating light; irradiating from the irradiating light source Light and excitation from the excitation light source 79 200403463 Light is introduced into the amplification optical fiber from the entrance portion, and in the amplification optical fiber, the irradiated light is amplified by the action of the excitation light, and by the second combination The wave mechanism is separated and emitted from the exit portion. 77. The light source device according to item 76 of the patent application scope, wherein the illumination light source is composed of a laser light source that emits laser light of a predetermined wavelength. 78. A light source device comprising: a light amplifying device according to item 67 of the scope of patent application; an irradiation light source 'for emitting irradiation light; and an excitation light source for emitting excitation light; The irradiated light from the radiation source passes through the first multiplexing / demultiplexing mechanism and is introduced into the amplifying fiber from the entrance portion, and the excitation light from the excitation light source passes through the second multiplexing / demultiplexing mechanism to guide the amplification from the exit portion through the exit portion. Inside the optical fiber, in the amplifying optical fiber, the irradiated light is-amplified by the action of the excitation light, and is separated by the second multiplexing / demultiplexing mechanism, and is emitted from the exit portion. 79. The light source device according to item 78 of the patent application scope, wherein the illumination light source is composed of a laser light source that emits laser light of a predetermined wavelength. φ 80. A light treatment device 'characterized in that it includes: any light source device in the scope of patent applications 72 to 79; a wavelength converter that converts light emitted from the exit portion of the light source device' into light The irradiation power for a predetermined wavelength; and the irradiation optical system, which guides the irradiation light converted by the wavelength converter to a treatment site for irradiation. 81. An exposure device 'characterized by: 80 200403463 The wavelength converter in the 72nd to 79th scope of the patent application, which is used for gland // Λ original flat placement, and will be the next to the master of the light source device The emitted irradiation light is converted into irradiation light with a chirped wavelength; ^ 出 # 出 出 ==: is used to hold a mask provided with a predetermined exposure pattern; The image holding portion is used to hold an exposure object; The system is to be irradiated by the wavelength converter on the reticle held by the support; and the projection optical system is the day when the reticle will pass through the reticle ... The system irradiates the mask object. A shot first ’irradiates the exposure held by the object holding part. 8181
TW92105428A 2002-03-13 2003-03-13 Light amplifying device and method of manufacturing the device, light source device using the light amplifying device, light treatment device using the light source device, and exposure device using the light source device TW200403463A (en)

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JP2002138861A JP2003332653A (en) 2002-05-14 2002-05-14 Optical amplifier, light source device using the optical amplifier, optical therapeutic device using the light source device, and aligner using the light source device
JP2002142247A JP2003332654A (en) 2002-05-17 2002-05-17 Optical amplifier, light source device using the optical amplifier, optical therapeutic device using the light source device, and aligner using the light source device
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