TW200307184A - Scan exposure method and scan exposure apparatus - Google Patents

Scan exposure method and scan exposure apparatus Download PDF

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Publication number
TW200307184A
TW200307184A TW092113025A TW92113025A TW200307184A TW 200307184 A TW200307184 A TW 200307184A TW 092113025 A TW092113025 A TW 092113025A TW 92113025 A TW92113025 A TW 92113025A TW 200307184 A TW200307184 A TW 200307184A
Authority
TW
Taiwan
Prior art keywords
substrate
aforementioned
photomask
optical system
projection optical
Prior art date
Application number
TW092113025A
Other languages
English (en)
Chinese (zh)
Inventor
Eiichi Miyake
Original Assignee
Sanei Giken Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002179787A external-priority patent/JP2004023046A/ja
Priority claimed from JP2002258875A external-priority patent/JP2004046051A/ja
Application filed by Sanei Giken Co Ltd filed Critical Sanei Giken Co Ltd
Publication of TW200307184A publication Critical patent/TW200307184A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW092113025A 2002-05-23 2003-05-14 Scan exposure method and scan exposure apparatus TW200307184A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002149436 2002-05-23
JP2002179787A JP2004023046A (ja) 2002-06-20 2002-06-20 走査型露光方法
JP2002258875A JP2004046051A (ja) 2002-05-23 2002-09-04 走査露光方法および走査露光装置

Publications (1)

Publication Number Publication Date
TW200307184A true TW200307184A (en) 2003-12-01

Family

ID=29715905

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092113025A TW200307184A (en) 2002-05-23 2003-05-14 Scan exposure method and scan exposure apparatus

Country Status (3)

Country Link
KR (1) KR20040014172A (ko)
CN (1) CN1460897A (ko)
TW (1) TW200307184A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102449552A (zh) * 2010-02-24 2012-05-09 恩斯克科技有限公司 曝光装置用光照射装置、曝光装置、曝光方法、基板制造方法、掩模和被曝光基板

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100700658B1 (ko) * 2005-03-28 2007-03-27 삼성에스디아이 주식회사 유기전계발광소자
US8917378B2 (en) * 2007-12-20 2014-12-23 Nikon Corporation Exposure method, exposure apparatus, and method for producing device with plurality of projection optical systems and pattern having first partial pattern area and second partial area having overlaid area with first partial pattern area

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102449552A (zh) * 2010-02-24 2012-05-09 恩斯克科技有限公司 曝光装置用光照射装置、曝光装置、曝光方法、基板制造方法、掩模和被曝光基板
CN102449552B (zh) * 2010-02-24 2015-04-08 恩斯克科技有限公司 曝光装置用光照射装置、曝光装置、曝光方法、基板制造方法、掩模和被曝光基板

Also Published As

Publication number Publication date
CN1460897A (zh) 2003-12-10
KR20040014172A (ko) 2004-02-14

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