200307165 (1) 玖、發明說明 【發明所屬之技術領域】 本發明係關於一種偏光濾膜，其被使用在液晶顯示元 件的配向膜、或在採用紫外線硬化型液晶的視角保障薄膜 的配向層上、以偏光光照射而實施光配向的配向處理等， 以及係關於使用該濾膜的偏光光照射裝置。 【先前技術】 近年來，關於液晶顯示元件的配向膜或視角保障薄膜 的配向層之配向處理方面，有採用利用預定波長之偏光光 照射在配向膜上而進行配向之所謂光配向技術。 採用光配向之偏光光照射裝置方面，有例如日本特開 平10-9〇684號公告中所揭示者。該公告中所記載的裝置中 ，瞄準儀之射出側設置有偏光元件。此偏光元件爲配置成 使多個玻璃板對照射光之光軸僅以布魯特斯角而傾斜者。 最近，在與光配向有關的開發實驗用方面有，將偏光 光以消光比1〇〇 : 1照射在約150公厘X 150公厘之領域上的 需求。爲了滿足此規格需求而進行方面，上述公告所記載 的裝置中卻有偏光元件大型化、裝置全體也大型化之問題 〇 所謂消光比1 〇 〇 : 1，是在設計偏光兀件上，使s偏光 成分對p偏光成分（或者p偏光成分對s偏光成分）在理論上 必須爲〇。實際上這是由於迷光等而使消光比惡化所造成 。上述公告之第5圖中，使s偏光成分對P偏光成分爲〇的例 (2) (2)200307165 子方面，顯示有採用9 8片玻璃板。 例如，如第8圖所示，爲了照射約1 5 0公厘X 1 5 〇公厘 之領域，而使玻璃板傾斜成布魯斯特角（例如材質爲石英 玻璃之時其布魯斯特角爲5 6 3 ° )之故，尺寸必須爲φ 2 7 0 公厘、而實際上如同一圖所示爲Φ300公厘以上。爲了使 Φ 300公厘之玻璃板不會由於本身重量而彎曲，厚度最好 在5公厘以上。因爲玻璃板彎曲時，光之入射角會從布魯 斯特角偏離，因而使消光比惡化。 一片玻璃板之厚度在5公厘以上時，9 8片玻璃板重疊 變成490公厘，在高度（光軸）方向之高度以簡單方法計算 變成883公厘。 況且，爲了使玻璃與玻璃之間的折射率變化而必須要 有空氣層，因此全體高度更會超過900公厘。 玻璃板配置成傾斜布魯斯特角的偏光元件，雖然可獲 得透過玻璃板之波長、卻幾乎無波長特性、而波長領域很 廣泛之偏光光，但是爲了獲得良好消光比的偏光光時，如 上所述，因爲必須使用多片的玻璃板而造成大型化。偏光 元件大型化之時，也會使偏光光照射裝置變成大型化。 另一方面，不會造成大型化而消光比良好的偏光元件 方面，以採用切除波長的濾膜爲人所習知。 切除波長的濾膜係在玻璃等之透明基板上蒸著多層膜 ，並調節其光學的膜厚，以切除特定波長以上之光，或者 切除特定波長以下之光的濾膜，其爲先前技術所習知者。 在此所謂的「切除」，一般言之是指光透過率降到 -6- (3) (3)200307165 0 5 %以下之謂，因此下面係根據此定義而記載。 如此之濾膜雖然在光入射角爲〇 °之時設計成可將特 定波長以上或特定波長以下切除，但是光入射角變大時， 切除之光波長會向短波長側偏移。然而此偏移量在p偏光 及s偏光有差異。利用此差異而做成偏光元件。 例如，在日本平成元年10月9日由歐普通尼克斯株式 會社發行的「光·薄膜技術手冊」中之第6節偏光漉膜（以 下稱爲文獻1)、及198 9年11月30日由日刊工業新聞社發行 「光學薄膜」第396-397頁、由馬廖氏所著而由小倉繁太 郎等3人所翻譯之一文（以下稱爲文獻2)中記載有上述之濾 膜。 上述文獻1之第6圖中顯不有，S偏光光爲將約650奈米 以下之波長切除、P偏光光爲到5 9 0奈米爲止均未切除的濾 膜。使用該濾膜之時，在波長約爲5 9 0奈米〜65 0奈米的範 圍內，可獲得S偏光成分理論上爲0、消光比良好的P偏光 同樣地，上述文獻1之第7圖中顯示有，波長約爲490 奈米〜5 5 0奈米的範圍內，僅P偏光光可透過之濾膜。 而且，上述文獻2之第396頁的第8、11圖顯示有，在 波長約爲9 5 0奈米〜1 0 5 0奈米的範圍內，僅P偏光光可透過 之濾膜。 如此利用蒸著膜製成之波長切除之濾膜的偏光元件僅 以一片玻璃板而獲得良好消光比，因此比使用多個玻璃板 的偏光元件更小型。但是，所得到的偏光光之波長領域會 (4) (4)200307165 受到限制。因而，爲了使波長領域擴大，一般採用下列之 兩個方法。 (1) 使光的入射角度變大。光的入射角度變大之時，P偏 光光及S偏光光之波長偏移之差異會擴大，因此使偏光光 之波長領域變成擴大。 但是爲了照射同樣領域之故，而必須使該濾膜面積變 大，因此高度（光軸）方向也變高，而使裝置大型化。 (2) 採用使蒸著在基板上之濾膜的折射率變大的材料。 濾膜的折射率變大時，會使偏光光之波長領域變成擴 大。 另一方面，可在寬廣的波長領域中獲得良好消光比的 偏光光之偏光元件方面，習知者有光束分裂立方體。例如 曰本特開平6-289222號公告中揭示有該光束分裂立方體。 上述光束分裂立方體係將具有相同短波長切除特性之 第1、第2多層膜分別蒸著在玻璃基板之兩面上而形成的偏 光鏡，以兩個玻璃棱鏡夾持著，然後將第1、第2多層膜錯 開之時，反射S偏光成分之波長帶領域會產生變化。 上述公告中所記載者爲利用，採用玻璃稜鏡時可使P 偏光光之透過率在寬廣領域上變高的光束分裂立方體之獨 特特性而形成者，若不在偏光分離面之兩側上配置玻璃稜 鏡時，無法獲得所需之特性。 【發明內容】 〔發明所欲解決之課題〕 -8- (5) (5)200307165 上述使用波長切除濾膜的偏光元件（以下將使用波長 切除濾膜的偏光元件稱爲偏光濾膜）在適用於光配向裝置 之情形中，具有下列之問題。 光配向膜係利用紫外線領域的偏光光而進行配向。現 在，習知上是以3 6 5奈米附近之波長的光進行配向、或以 其以下之波長（2 80〜3 20奈米）之光進行配向。這些波長領 域比上述文獻1，2之圖中所顯示的濾膜波長要短。 上述紫外線之短波長領域中，對應於此而必須使透過 短波長光的膜被蒸著。但是，透過紫外線的膜大多爲折射 率比較小者，其偏光光之波長領域變小。 第9圖、第1 0圖係可獲得在3 6 5奈米附近之偏光光的波 長切除濾膜之例。此情況中設計有，可獲得在3 60奈米 〜3 70奈米的波長範圍內之強照度之P偏光光。 兩個圖中縱軸爲透過率、橫軸爲波長之時，均顯示有 P偏光光及S偏光光之透過率。而，這些爲計算値，其係在 光之入射角爲45°之時設定。 第9圖爲切除特定波長以下的光之濾膜，在3 5 0奈米 〜370奈米的範圍內，可獲得沒有S偏光成分之P偏光光。在 3 6 5奈米〜3 70奈米的約5奈米範圍內可獲得強照度的P偏光 光。 任何一個情形中，可獲得偏光光之波長範圍僅爲5奈 米〜10奈米的狹窄範圍。 可獲得偏光光之波長範圍爲狹窄之時’會引起下列問 題。 -9- (6) (6)200307165 將膜蒸著在基板上時，以此次Φ 3 00公厘之寬廣領域 下很難以控制使基板全體之膜厚變成均勻。尤其控制膜厚 在2 5%以內而蒸著時，欲不使用大型且非常昂貴的蒸著裝 置也很難。 實際之膜厚比設計値厚之時，會使上述可獲得偏光光 之波長範圍從設計値向長波長側偏移。反之，膜厚比設計 値薄之情形，則從設計値向短波長側偏移。例如，將1 μιη 之膜進行蒸著之時，膜厚約相差2 5%(20〜30奈米）之時， 上述波長範圍約偏移1〇奈米。 例如第9圖之情形，膜變厚2 5 %時，在可獲得強照度 的Ρ偏光光之波長範圍360奈米〜3 70奈米，會朝向膜變薄 2 5%時之3 70奈米〜3 8 0奈米偏移。其結果爲從濾膜射出之 3 6〇奈米〜3 7〇奈米範圍中之Ρ偏光光的照度會變弱。第10圖 之濾膜的情形也同樣地，由於膜厚的變化，Ρ偏光光的照 度會變弱。 即，膜厚不均勻時，獲得Ρ偏光光之波長範圍會部份 地偏移，該部份中的Ρ偏光光的照度會變弱，因而無法在 照射領域全面上獲得均勻的照度。 如上所述’使用先前技術之波長切除濾膜的偏光濾膜 ，其波長範圍狹窄，適用於需要在寬廣領域上以偏光光照 射之光配向膜的配向處理等之情形中，均有Ρ偏光光的照 度會變弱之問題。 而，使用折射率大之膜的話，雖然可使波長範圍變寬 ，但是目前適合上述之材料難以發現。並且將濾膜之傾斜 -10- (7) (7)200307165 度做成大，使光之入射角成爲比45°大之時，雖然可使波 長範圍變寬，但是濾膜會變大而裝置也會大型化。 而且，上述之例的日本特開平6-2 89222號公告中揭示 的光束分裂立方體係在偏光分離面上形成的膜的兩側上， 以兩個玻璃稜鏡夾持著而構成，因此膜的面積變寬之時， 該玻璃稜鏡也變大，因而使全體變得非常大。 例如，偏光面爲300公厘X 300公厘之時，立方體之一 邊變成200公厘以上，會使安裝裝置大型化。而且，超過 此値以上時，製作稜鏡用之玻璃塊本身之製作也會變成困 難，而且價格也變貴，因而成爲裝置成本增加的原因。 本發明係考慮上述事情之後而發展成功者，其目的在 提供一種偏光濾膜，其不僅小型且價廉，而且偏光之波長 領域寬廣，並且可以使用在紫外線領域、適用於光配向用 之曝光裝置中。 〔解決課題所用之手段〕 控制蒸著之膜厚而切除特定之波長以上或以下的光爲 習知之事。適當地運用此技術，在特定之入射角之時，亦 可切除特定之波長以上或以下的S偏光光。 但是，將相同特性之第1、第2多層膜（例如切除短波 長之多層膜及切除短波長之多層膜，或切除長波長之多層 膜及切除長波長之多層膜）組合，即使該膜厚被錯開時， 若不使用上述之光束分裂立方體時，無法使P偏光光透過 之波長範圍擴大。 -11 - (8) (8)200307165 因此在本發明中，係將切除特定之波長以下的S偏光 光之膜、及切除特定之波長以上的S偏光光之膜組合而形 成偏光濾膜，因而使P偏光光透過的波長範圍擴大° 即，本發明中可以下列方式解決上述課題。 (1) 偏光濾膜係由二種類之多層膜所構成，第1之多 層膜係被做成切除特定波長以下之光的切除短波長之多層 膜，而且第2之多層膜係被做成切除特定波長以上之光的 切除長波長之多層膜，上述之切除短波長多層膜及長波長 多層膜係設置成以不會使入射光產生干涉的預定距離而互 相隔開。 (2) 設計上，使上述切除短波長多層膜在預先設定的 入射角度上將特定波長λ 1以下的S偏光光切除，使上述切 除長波長多層膜在該入射角度上將特定波長λ 2以上的S偏 光光切除，並且使上述波長λ 1、λ 2之間有λ 1 2 λ 2之關 (3 ) 在透過所需波長領域之光的一片基板之兩面上形 成有上述切除短波長多層膜及切除長波長多層膜。 (4) 使所需波長領域之光透過的第1基板上形成有上 述切除短波長多層膜，並且使所需波長領域之光透過的第 2基板上形成有上述切除長波長多層膜。 (5) 利用上述偏光濾膜將紫外線進行偏光。 (6) 上述之偏光濾膜可適用在一種由燈具、及將從該 燈射出之光進行集光用之集光鏡、及聚光透鏡、及瞄準儀 所構成的偏光光照射裝置，該偏光濾膜係在上述燈具射出 (9) (9)200307165 的光之光路中配置成對該光之光軸以特定角度傾斜。 本發明之偏光濾膜係由上述（1)〜（5)所構成者，因而利 用切除短波長多層膜及切除長波長多層膜兩方之膜而使可 偏光之領域連繫起來，與分別單獨設置之情形比較時，可 使波長範圍變成寬廣。 因此，不必使用光束分裂立方體之下，可獲得波長範 圍寬廣的偏光濾膜，進而可進行偏光濾膜之小型化。 而且，波長範圍寬廣之故，即使多層膜之膜厚多少有 誤差、且不均勻之情形時，亦可避免上述P偏光光的照度 會變弱之問題。 並且，如上面（3)所述，在透過所需要的波長領域之 光的一片基板之兩面上形成有上述切除短波長多層膜及切 除長波長多層膜的話，可使偏光濾膜的構成做成簡單，因 而可使其進一步小型化。 另一方面，如上面（4)所述，在上述第1、第2基板上 分別形成有第1、第2多層膜，預先使第1、第2基板之角度 爲可調整的話，則在多層膜形成之時，即使切除短波長多 層膜或切除長波長多層膜多少與設計値有些偏差時，調整 第1、第2基板的傾斜時可吸收該偏差，因而可與切除波長 吻合。 況且，如上面（6)所述，使上述偏光濾膜適用在例如 使配向膜進行光配向用之偏光光照射裝置的話，可使偏光 濾膜小型化，並且亦可使裝置小型化。 並且，光配向膜進行光配向之波長領域大致已定，光 -13 - (10) (10)200307165 配向之中，雖然偏光濾膜之波長領域有與上述波長領域吻 合之需要，本發明之中，可透過p偏光光的波長領域比先 前技術者更寬廣之故，因而容易地適用到光配向膜之光配 向效率高之波長領域，而且即使多層膜之膜厚多少有誤差 、且不均勻之情形時，不會有偏離處理效率高的波長領域 之事，因此可使光配向處理之處理效率提高。 【實施方式】 第1圖係顯示本發明之實施例的偏光濾膜之構成例。 同一圖之中，符號3是塗佈有多層膜之透明基板（例如 玻璃），第1、第2多層膜利用蒸著而形成在透明基板3之兩 面上，透明基板3配置成對入射光之光軸以預定之角度（布 魯斯特角以下的角度、例如4 5 ° )而傾斜。 多層膜之塗佈方法中，有蒸著、濺鍍、含浸等。上述 透明基板3必須選擇使所需要的光之波長透過之材料。 並且，該透明基板3之厚度扮演著使兩面上形成之二 種類多層膜以預定距離隔開之角色，該距離（厚度）對入射 光之波長必須不產生干涉，因而必須充分夠大才行。產生 干涉時，二種類之膜在光學上會變成只有一種類的膜，因 此無法獲得所需的效果。 但是，若在3 6 5奈米附近之紫外線領域的話，厚度只 要數公厘即很充分。 透明基板3之一方的面上形成的第1多層膜1係爲切除 短波長之多層膜，例如其爲具有第2圖之透過率特性的膜 -14- (11) (11)200307165 被蒸著而形成者。此多層膜如同一圖所示，係設計成在光 之入射角爲45°之時，將波長在3 65奈米以下的S偏光光切 除。此種多層膜係高折射率膜及低折射率膜以預定之厚度 交互重疊所形成者。 具體上，1層之光學的厚度爲7 0〜80奈米，其在高折射 率膜方面係採用五氧化二鉅（Ta2 05)，在低折射率膜方面 係採用二氧化矽（Si02)交互地重疊33層所形成者。 另一方之面上形成的第2多層膜2係爲切除長波長之多 層膜，例如其爲具有第3圖之透過率特性的膜被蒸著而形 成者。此多層膜係設計成在光之入射角爲45 °之時，將波 長在365奈米以上的S偏光光切除。 此種多層膜之情形中，1層之光學的厚度爲110〜130奈 米，其係五氧化二钽膜及二氧化矽膜交互地重疊3 2層所形 成者。 膜之材料方面，除了上述者以外，在高折射率膜方面 可使用二氧化給（Hf02)、二氧化锆（Zr02)，在低折射率膜 方面可採用氟化鎂（MgF2)等。 P偏光光在第2圖之多層膜1中係切除345奈米以下之光 ，在第3圖之多層膜2中係切除385奈米以上之光。 第4圖中顯示有第1圖所示之偏光濾膜的透過率特性。 利用透明基板3之兩面上所設置的多層膜1，2分別之作用 ，在345〜385奈米之波長範圍中使S偏光光被切除而僅透過 P偏光光。如此可獲得P偏光光透過率良好、且強照度之P 偏光光的波長領域，會變成在355〜3 75奈米之約20奈米的 -15- (12) (12)200307165 範圍內。與上述第9、1 0圖之情形比較時，強照度之P偏光 光的波長領域變成2倍。 而，雖然係二種類之膜的S偏光光被切除的波長，但 是不須要使兩方嚴格地完全一致。第2圖之多層膜1 (切除 短波長多層膜）之S偏光光被切除的波長λ 1 ’比第3圖之多 層膜2(切除長波長多層膜）之S偏光光被切除之波長λ 2爲 長波長之時，較無問題。但是在這方面，獲得強波長領域 之Ρ偏光光的波長領域變成稍微狹窄。 獲得3 6 0〜3 7 0奈米之波長範圍內的強照度偏光光之情 形中，使用此濾膜之時，因爲獲得強照度之Ρ偏光光的波 長範圍爲在3 5 5〜3 7 5奈米，因此即使膜厚每變厚2 5%而使 波長領域向短波長側偏移1 〇奈米之時，亦可獲得在 3 4 5〜3 6 5奈米之波長範圍的強偏光光。並且即使膜厚每變 薄2 5%而使波長領域向長波長側偏移1〇奈米之時，亦可獲 得在3 6 5〜3 8 5奈米之波長範圍的強偏光光。 亦即，膜厚在± 2 5%範圍內變化之時，可使所需要之 波長範圍3 60〜3 70奈米（即使不是全領域之時，至少爲其一 部份之領域）之光進行偏光。 從而，與上述第9、1 0圖之情形比較時，可獲得強照 度之3 60〜3 70奈米波長範圍的Ρ偏光光。 第1圖所示之偏光濾膜雖然是在一片之透明基板的兩 側上形成有兩種類的膜所形成者，如第5圖所示，亦可以 使切除短波長之多層膜及切除長波長之多層膜分別形成在 不同的基板上，使兩者在入射光不產生干涉之情況下以充 -16- (13) (13)200307165 分的距離隔開而並列。 第5(a)圖是在2片之透明基板4，5之光入射側上分別設 置有切除短波長多層膜1、切除長波長多層膜2之例子。如 前述一樣，透明基板4，5配置成僅以預定之角度傾斜，上 述多層膜1，2之距離係設定成對入射光之波長不產生干涉 的距離。 即使上述構成之偏光濾膜之中，亦與上述第1圖所示 者同樣地，可獲得在預定之波長範圍之P偏光光。 上述透明基板4，5及多層膜1，2之配置並不限於上述 而已，如第5(b)圖所示，使多層膜1，2設置在透明基板4，5 之光射出側，亦可如第5(c)圖所示，使多層膜1，2成對向 地配置，或者可如第5(d)圖所示，亦可設置在透明基板4, 5之光入射側之面，及光射出側的面上。並且，亦可將切 除長波長多層膜2設置在光入射側之透明基板4上，將切除 短波長多層膜1設置在光射出側之透明基板5上。再者，亦 可使基板4，5之角度對入射光之光軸爲不同。 第6圖係顯示可變更對形成有多層膜的透明基板4，5 之入射光之光軸角度之偏光濾膜的構成例之圖。第6(b)圖 係第6(a)圖所示之偏光濾膜的斜視圖。 第6圖所示之偏光濾膜與第5圖者同樣地，係使分別地 形成有2種類之多層膜的透明基板4，5配置成使光不產生 干涉而以充分距離隔開並列者，在透明基板4，5之兩側部 上安裝有旋轉軸6。 該旋轉軸6係由圖中未顯示的支持元件以可旋轉方式 -17- (14) (14)200307165 支撐著，形成有多層膜的透明基板4，5對入射光之光軸可 設定在任意之角度上。 若對多層膜之入射光之光軸角度爲可調整的話，多層 膜之切除波長λ可被偏移某種程度，因此在多層膜之形成 時，即使由於膜厚之誤差等而使多層膜之切除波長；I多少 與設計値有些偏差時，調整透明基板4或5的角度時，可使 在透明基板4，5形成的多層膜之切除波長互相吻合。 第7圖係顯示本發明的偏光濾膜被做爲偏光元件而使 用在光配向用之偏光光照射裝置的構成之一例的圖。 如同一圖所顯示，光配向用之偏光光照射裝置係由超 高壓水銀燈1 1、及橢圓集光鏡1 2、及第1平面鏡1 3、及聚 光透鏡1 5、及快門1 4、及第2平面鏡1 6、瞄準儀透鏡1 7、 本發明之偏光濾膜1 8所構成。 並且，設置有對準顯微鏡1 9，利用該對準顯微鏡1 9可 觀查光罩Μ及工件W之對準記號，而進行光罩Μ及工件W 之位置對準。 第7圖中，燈11放射之紫外線由橢圓集光鏡1 2進行集 光，以第1平面鏡1 3反射，而入射到聚光透鏡1 5中。 從聚光透鏡1 5射出之光在第2平面鏡1 6反射，而後射 入偏光濾膜1 8中。 偏光濾膜1 8爲上述第1圖、第5圖、第6圖所顯示構成 的偏光濾膜，例如波長3 4 5〜3 8 5奈米（Ρ偏光光之照度爲強 之時係爲3 5 5〜3L奈米）的範圍僅Ρ偏光光被射出。而，偏 光濾膜1 8中最好使光以預先設定的入射角度（=4 5 ° )入射 (15) (15)200307165 ，在偏光濾膜1 8之入射側上必須有使如上所述的光成爲平 行光用之瞄準儀透鏡或瞄準儀鏡子。 從偏光濾膜1 8射出之P偏光光介由光罩Μ而照射到光 配向膜（工件W)之所需位置上，以實施光配向處理。而偏 光光照射到工件W之全面的情況時，不需要光罩Μ，並且 不需要使上述光罩Μ對準工件W之位置。 〔發明的效果〕 如以上所說明，本發明可獲得以下之效果。 (1) 偏光濾膜係由二種類之多層膜所構成，第1之多 層膜係被做成切除特定波長以下之光的切除短波長之多層 膜，而且第2之多層膜係被做成切除特定波長以上之光的 切除長波長之多層膜隔，因而可達成小型且價廉、並且偏 光之波長範圍寬廣的偏光濾膜。 (2) 可以使用在紫外線領域，因而可適用於光配向膜 配向用之曝光裝置。 (3) 不必使偏光濾膜傾斜到布魯斯特角，而可獲得良 好消光比的偏光光。 因爲偏光濾膜之傾斜角度可以減少，因而該濾膜之尺 寸可以做成較小。並且因此使裝置之高度（光軸）方向上的 尺寸亦可做成較小。 (4) 由於本發明之偏光濾膜可適用於偏光光照射裝置 ，因此使裝置可進行小型化。並且，也容易地適合於光配 向膜之光配向效率高之波長領域，因此可使處理效率提高 -19- (16) (16)200307165 【圖式簡單說明】 第1圖係顯示本發明之實施例的偏光濾膜構成例之圖 第2圖係顯示第1圖之透明基板之一方的面上形成的多 層膜特性例之圖； 第3圖係顯示第1圖之透明基板之另一方的面上形成的 多層膜特性例之圖； 第4圖係顯示有第1圖所示之偏光濾膜的透過率特性之 圖； 第5圖係顯示分別在不同基板上形成有切除短波長多 層膜及切除長波長多層膜的偏光濾膜之圖； 第6圖係顯示可變更對形成有多層膜的透明基板之入 射光的光軸角度之偏光濾膜的構成例之圖； 第7圖係顯示使用本發明之偏光濾膜的光配向用偏光 光照射裝置之一例的圖； 第8圖係顯示玻璃板配置成以布魯斯特角傾斜的偏光 元件之圖； 第9圖是可獲得在波長3 6 5奈米附近之偏光光的切除短 波長偏光濾膜之特性例之圖； 第10圖是可獲得在波長365奈米附近之偏光光的切除 長波長偏光濾膜之特性例之圖。 -20- (17) 200307165 【符號說明】 11 畫面 3 透明基板 1 第1多層膜 2 第2多層膜 4，5 透明基板 6 旋轉軸200307165 (1) 发明. Description of the invention [Technical field to which the invention belongs] The present invention relates to a polarizing filter, which is used for an alignment film of a liquid crystal display element or an alignment layer of a viewing angle protection film using an ultraviolet curing liquid crystal , An alignment process for performing light alignment by irradiating with polarized light, and the like, and a polarized light irradiation device using the filter. [Prior Art] In recent years, regarding the alignment processing of the alignment layer of the liquid crystal display element or the alignment layer of the viewing angle ensuring film, there is a so-called photo-alignment technology that uses polarized light of a predetermined wavelength to irradiate the alignment film for alignment. As for the polarized light irradiation device using light alignment, for example, it is disclosed in Japanese Patent Application Laid-Open No. 10-90684. In the device described in this bulletin, a polarizing element is provided on the emission side of the collimator. This polarizing element is arranged so that a plurality of glass plates tilt the optical axis of the irradiated light only at the Brutus angle. Recently, in the field of development experiments related to light alignment, there is a need to irradiate polarized light with an extinction ratio of 100: 1 to an area of about 150 mm x 150 mm. In order to meet the requirements of this specification, the devices described in the above bulletin have problems of increasing the size of the polarizing element and the size of the entire device. The so-called extinction ratio 1 00: 1 is used in the design of polarizing elements to make s The polarization component to the p polarization component (or the p polarization component to the s polarization component) must be 0 in theory. In fact, this is caused by deterioration of extinction ratio due to stray light and the like. In the fifth figure of the above bulletin, an example in which the s-polarized component and the P-polarized component are set to 0 is shown. (2) (2) 200307165 In a sub aspect, it is shown that 98 glass plates are used. For example, as shown in Figure 8, in order to illuminate an area of about 150 mm X 1 50 mm, the glass plate is tilted to a Brewster angle (for example, when the material is quartz glass, the Brewster angle is 5 6 3 °), the size must be φ 2 70 mm, in fact, as shown in the same figure is Φ 300 mm or more. In order to prevent the glass plate of Φ 300 mm from bending due to its weight, the thickness is preferably 5 mm or more. When the glass plate is bent, the incident angle of light deviates from the Brewster angle, thereby deteriorating the extinction ratio. When the thickness of one glass plate is more than 5 mm, 98 glass plates overlap to become 490 mm, and the height in the direction of the height (optical axis) becomes 883 mm by a simple method. Moreover, since an air layer is required to change the refractive index between glass and glass, the overall height is more than 900 mm. The polarizing element with the glass plate arranged at an inclined Brewster angle can obtain polarized light with a wavelength that passes through the glass plate but has almost no wavelength characteristics and a wide range of wavelengths. However, in order to obtain polarized light with a good extinction ratio, as described above. Because of the need to use multiple glass plates, the size is increased. When the polarizing element is enlarged, the polarized light irradiation device is also enlarged. On the other hand, it is known to use a filter having a cut-off wavelength in a polarizing element that does not cause an increase in size and has a good extinction ratio. A filter film with a cut-off wavelength is a filter film in which a multilayer film is vaporized on a transparent substrate such as glass and its optical film thickness is adjusted to cut off light above a specific wavelength or cut off light below a specific wavelength. Learner. The term "cut-off" here generally means that the light transmittance has fallen below -6- (3) (3) 200307165 0 5%, so it is described below based on this definition. Although such a filter is designed to cut off a specific wavelength or more when the light incident angle is 0 °, when the light incident angle becomes larger, the wavelength of the cut light is shifted to the short wavelength side. However, this offset is different between p-polarized light and s-polarized light. This difference is used to produce a polarizing element. For example, in the "Light and Thin Film Technology Manual" issued by Ordinary Knicks Co., Ltd. on October 9, Heisei, Japan, Section 6 of the polarizing diaphragm (hereinafter referred to as Document 1), and November 30, 198 The above-mentioned filter membranes are described in the article "Optical Films", published by Nikkan Kogyo Shimbun on pages 396-397, and translated by three people including Ogura Shigeru and others by Mario's (hereinafter referred to as Document 2). As shown in the sixth figure of the above document 1, the S-polarized light is a filter that cuts off a wavelength of about 650 nm or less, and the P-polarized light is a filter that is not cut off to 590 nm. When this filter is used, P-polarized light with theoretically zero S-polarized component and good extinction ratio can be obtained in the wavelength range of about 590 to 65 nm. Similarly, the seventh of the above-mentioned reference 1 The figure shows a filter with wavelengths ranging from about 490 nm to 550 nm. Only P polarized light can pass through. In addition, Figures 8 and 11 on page 396 of the above-mentioned Document 2 show a filter film through which only P-polarized light can pass in a wavelength range of about 950 nm to 105 nm. The polarizing element using a wavelength-cut filter made of a vapor-deposited film in this way obtains a good extinction ratio with only one glass plate, and is therefore smaller than a polarizing element using a plurality of glass plates. However, the wavelength range of the obtained polarized light is limited (4) (4) 200307165. Therefore, in order to expand the wavelength range, the following two methods are generally used. (1) Increase the incident angle of light. As the incident angle of light becomes larger, the difference in wavelength shift between P-polarized light and S-polarized light becomes larger, so the wavelength range of polarized light becomes wider. However, in order to irradiate the same field, it is necessary to increase the area of the filter membrane, so that the height (optical axis) direction is also increased, and the device is increased in size. (2) Use a material that increases the refractive index of the filter film deposited on the substrate. The larger the refractive index of the filter, the wider the wavelength range of polarized light. On the other hand, in the case of a polarizing element capable of obtaining a polarized light having a good extinction ratio in a wide wavelength range, a beam splitter cube is known to those skilled in the art. For example, Japanese Patent Publication No. 6-289222 discloses the beam splitting cube. The above-mentioned beam splitting cube is a polarizer formed by vaporizing first and second multilayer films having the same short-wavelength cutting characteristics on both sides of a glass substrate, sandwiching two glass prisms, and then 2 When the multilayer film is staggered, the wavelength band area of the reflected S-polarized component changes. Those mentioned in the above notice are formed by using the unique characteristics of a beam splitting cube that can increase the transmittance of P polarized light over a wide range when glass is used. If glass is not arranged on both sides of the polarization separation surface After a while, the required characteristics cannot be obtained. [Summary of the Invention] [Problems to be Solved by the Invention] -8- (5) (5) 200307165 The above-mentioned polarizing element using a wavelength-cutting filter (hereinafter, a polarizing element using a wavelength-cutting filter is referred to as a polarizing filter) is applicable In the case of a photo-alignment device, there are the following problems. The photo-alignment film is aligned using polarized light in the ultraviolet field. At present, it is conventional to align with light having a wavelength of about 365 nanometers, or align with light having a wavelength of less than (280-320 nanometers). These wavelength ranges are shorter than the filter wavelengths shown in the figures 1 and 2 above. In the short-wavelength range of the above-mentioned ultraviolet rays, in accordance with this, it is necessary to vaporize a film that transmits short-wavelength light. However, most of the films that transmit ultraviolet rays have a relatively small refractive index, and the wavelength range of polarized light becomes smaller. Figures 9 and 10 are examples of wavelength-removed filters capable of obtaining polarized light near 365 nm. In this case, it is designed to obtain P polarized light having a strong illuminance in a wavelength range of 3 60 nm to 3 70 nm. In both figures, when the vertical axis is the transmittance and the horizontal axis is the wavelength, the transmittances of P-polarized light and S-polarized light are displayed. These are calculated 値, which are set when the incident angle of light is 45 °. Figure 9 is a filter that cuts light below a specific wavelength. In the range of 350 nm to 370 nm, P polarized light without S polarized components can be obtained. P-polarized light with strong illuminance can be obtained in a range of about 5 nm from 3 6 5 nm to 3 70 nm. In either case, a narrow wavelength range of only 5 nm to 10 nm can be obtained for polarized light. When a narrow wavelength range in which polarized light can be obtained 'causes the following problems. -9- (6) (6) 200307165 When the film is vapor-deposited on the substrate, it is difficult to control the thickness of the entire substrate to be uniform in a wide area of Φ 300 mm this time. In particular, when the film thickness is controlled within 25%, it is difficult to use a large and very expensive steaming device. When the actual film thickness is thicker than the design thickness, the wavelength range in which the polarized light can be obtained is shifted from the design thickness to the long wavelength side. Conversely, when the film thickness is thinner than the design thickness, the design thickness is shifted toward the short wavelength side. For example, when a 1 μm film is vaporized, when the film thickness differs by about 25% (20-30 nm), the above-mentioned wavelength range is shifted by about 10 nm. For example, in the case of Figure 9, when the film becomes 25% thick, the wavelength range of P polarized light that can obtain strong illumination is 360 nm to 3 70 nm, and it will be 3 70 nm when the film becomes 2 5% thinner. ~ 3 0 0 nm offset. As a result, the illuminance of the P polarized light in the range of 360 nm to 37 nm emitted from the filter becomes weak. In the case of the filter film shown in Fig. 10, the illuminance of P polarized light becomes weaker due to the change in film thickness. That is, when the film thickness is not uniform, the wavelength range of the obtained P-polarized light will be partially shifted, and the illuminance of the P-polarized light in this part will be weakened, so that it is impossible to obtain uniform illuminance in the entire irradiation field. As described above, the polarizing filter using the wavelength cutting filter of the prior art has a narrow wavelength range and is suitable for alignment processing of a light alignment film that requires polarized light irradiation in a wide range. The problem is that the illumination will become weaker. On the other hand, if a film having a large refractive index is used, the wavelength range can be widened, but it is difficult to find materials suitable for the above. When the inclination of the filter is made larger by -10- (7) (7) 200307165 degrees, and the incident angle of light is larger than 45 °, although the wavelength range can be widened, the filter will become larger and the device will be larger. It will also grow in size. In addition, the beam splitting cube disclosed in Japanese Patent Application Laid-Open No. 6-2 89222 described above is formed by sandwiching two glass cymbals on both sides of the film formed on the polarization separation surface. When the area is widened, the glass goblet also becomes large, so that the whole becomes very large. For example, when the polarizing surface is 300 mm x 300 mm, one side of the cube becomes 200 mm or more, which increases the size of the mounting device. In addition, if it exceeds this range, the production of the glass block itself will become difficult and the price will become expensive, which will cause the cost of the device to increase. The present invention has been developed successfully after considering the above matters, and its object is to provide a polarizing filter that is not only compact and inexpensive, but also has a wide wavelength range for polarized light, and can be used in the ultraviolet field and an exposure device suitable for light alignment. in. [Means used to solve the problem] It is known to control the thickness of the vaporized film and cut off light with a specific wavelength or more. Appropriate use of this technique can also remove S-polarized light above or below a specific wavelength at a specific incident angle. However, the first and second multilayer films with the same characteristics (for example, multilayer films with short wavelengths and multilayers with short wavelengths, or multilayers with long wavelengths and multilayers with long wavelengths) are combined, even if the film thickness is When staggered, if the above-mentioned beam splitting cube is not used, the wavelength range in which P polarized light can be transmitted cannot be enlarged. -11-(8) (8) 200307165 Therefore, in the present invention, a polarizing filter is formed by combining a film that cuts S polarized light below a specific wavelength and a film that cuts S polarized light above a specific wavelength, so Increasing the wavelength range through which P-polarized light is transmitted, that is, in the present invention, the above problems can be solved in the following manner. (1) The polarizing filter is composed of two types of multilayer films. The first multilayer film is made of a short-wavelength multilayer film that cuts off light below a specific wavelength, and the second multilayer film is made of an ablation film. The long-wavelength multilayer film that cuts off light of a specific wavelength or more, and the short-wavelength multilayer film and the long-wavelength multilayer film that are cut out are arranged to be separated from each other by a predetermined distance that does not interfere with incident light. (2) In the design, the cut short-wavelength multilayer film cuts S polarized light below a specific wavelength λ 1 at a predetermined incident angle, and the cut long-wavelength multilayer film cuts a specific wavelength λ 2 or more at the incident angle. S polarized light is cut off, and a wavelength of λ 1 2 λ 2 is set between the wavelengths λ 1 and λ 2 (3) The above-mentioned cut short-wavelength multilayer film is formed on both sides of a substrate that transmits light in a desired wavelength range. And cut long-wavelength multilayer films. (4) The above-mentioned cut short-wavelength multilayer film is formed on a first substrate that transmits light in a desired wavelength region, and the above cut long-wavelength multilayer film is formed on a second substrate that transmits light in a desired wavelength region. (5) The polarizing filter is used to polarize ultraviolet rays. (6) The above-mentioned polarizing filter film can be applied to a polarized light irradiation device composed of a lamp, a light collecting lens for collecting light emitted from the lamp, a condenser lens, and a collimator. The filter film is arranged in the light path of the light emitted by the lamp from (9) (9) 200307165 so that the optical axis of the light is inclined at a specific angle. The polarizing filter of the present invention is composed of the above (1) to (5). Therefore, by cutting off both the short-wavelength multilayer film and the long-wavelength multilayer film, the polarizable fields are connected and separated from each other. When comparing the settings, the wavelength range can be widened. Therefore, it is not necessary to use a beam splitting cube, a polarizing filter with a wide wavelength range can be obtained, and the miniaturization of the polarizing filter can be achieved. In addition, due to the wide wavelength range, even if the thickness of the multilayer film is somewhat inaccurate and uneven, the problem that the illuminance of the P-polarized light described above becomes weak can be avoided. In addition, as described in the above (3), if the above-mentioned cut short-wavelength multilayer film and cut long-wavelength multilayer film are formed on both surfaces of a substrate that transmits light in a desired wavelength range, the structure of the polarizing filter can be made The simplicity makes it possible to further miniaturize it. On the other hand, as described in (4) above, the first and second multilayer films are formed on the first and second substrates, respectively. If the angles of the first and second substrates are adjustable in advance, the multilayers are formed in multiple layers. When the film is formed, even if the short-wavelength multilayer film or the long-wavelength multilayer film is slightly deviated from the design, the deviation can be absorbed when the inclination of the first and second substrates is adjusted, so that it can match the cutoff wavelength. Moreover, as described in (6) above, when the above-mentioned polarizing filter is applied to, for example, a polarized light irradiation device for aligning a film with light alignment, the polarizing filter can be miniaturized, and the device can also be miniaturized. In addition, the wavelength range of the optical alignment film for light alignment has been roughly determined. In the alignment of light-13-(10) (10) 200307165, although the wavelength range of the polarizing filter needs to be consistent with the above wavelength range, in the present invention The wavelength range through which p-polarized light can be transmitted is wider than that of the prior art, so it is easily applicable to the wavelength range with high light alignment efficiency of the light alignment film, and even if the film thickness of the multilayer film has some errors and unevenness, In this case, there is no deviation from the wavelength region with high processing efficiency, so that the processing efficiency of the optical alignment processing can be improved. [Embodiment] FIG. 1 shows a configuration example of a polarizing filter according to an embodiment of the present invention. In the same figure, reference numeral 3 is a transparent substrate (such as glass) coated with a multilayer film. The first and second multilayer films are formed on both sides of the transparent substrate 3 by evaporation, and the transparent substrate 3 is disposed so as to resist incident light. The optical axis is inclined at a predetermined angle (an angle below the Brewster angle, for example, 45 °). Coating methods for the multilayer film include evaporation, sputtering, and impregnation. The transparent substrate 3 must be selected from a material that transmits a desired wavelength of light. In addition, the thickness of the transparent substrate 3 plays a role of separating the two types of multilayer films formed on both sides by a predetermined distance. The distance (thickness) must not interfere with the wavelength of the incident light, and must be sufficiently large. When interference occurs, the two types of films become optically only one type of film, so the desired effect cannot be obtained. However, in the ultraviolet region near 3,65 nm, a thickness of only a few millimeters is sufficient. The first multilayer film 1 formed on one of the surfaces of the transparent substrate 3 is a multilayer film having a short-wavelength cut-off. For example, it is a film having a transmittance characteristic as shown in FIG. -14. (11) (11) 200307165 is vaporized And the former. As shown in the same figure, this multilayer film is designed to cut S-polarized light with a wavelength below 3 65 nm when the incident angle of light is 45 °. Such a multilayer film is formed by alternately overlapping a high-refractive index film and a low-refractive index film with a predetermined thickness. Specifically, the optical thickness of layer 1 is 70 to 80 nanometers. It uses pentoxide (Ta2 05) for high-refractive-index films and silicon dioxide (Si02) for low-refractive-index films. The ground is formed by 33 layers. The second multi-layer film 2 formed on the other side is a multi-layer film having a long wavelength cut out. For example, the second multi-layer film 2 is formed by vaporizing a film having the transmittance characteristics shown in FIG. 3. This multilayer film is designed to cut S-polarized light with a wavelength above 365 nm when the incident angle of light is 45 °. In the case of such a multilayer film, the optical thickness of one layer is 110 to 130 nanometers, which is formed by overlapping two or two layers of a tantalum pentoxide film and a silicon dioxide film alternately. As for the material of the film, in addition to the above, for the high refractive index film, dioxide (Hf02), zirconium dioxide (Zr02) can be used, and for the low refractive index film, magnesium fluoride (MgF2) can be used. P-polarized light is removed from the multilayer film 1 of FIG. 2 under 345 nm, and the multilayered film 2 of FIG. 3 is removed from 385 nm. Figure 4 shows the transmittance characteristics of the polarizing filter shown in Figure 1. By using the functions of the multilayer films 1, 2 provided on both sides of the transparent substrate 3, the S polarized light is cut off in the wavelength range of 345 to 385 nm, and only the P polarized light is transmitted. In this way, the wavelength range of P-polarized light with good P-polarized light transmittance and strong illuminance will be in the range of -15- (12) (12) 200307165, which is about 20nm, from 355 ~ 3 75nm. When compared with the case of Figs. 9 and 10 described above, the wavelength range of the P-polarized light with strong illuminance is doubled. In addition, although the wavelengths of the S polarized light of the two types of films are cut off, it is not necessary to make both sides exactly the same. The wavelength λ 1 at which the S polarized light of the multilayer film 1 (cut short-wavelength multilayer film) of FIG. 2 is cut off is longer than the wavelength λ 2 at which the S polarized light of the multilayer film 2 (cut long wavelength multilayer film) of FIG. 3 is cut off When it is a long wavelength, there is no problem. In this respect, however, the wavelength range in which P-polarized light in the strong wavelength range is obtained becomes slightly narrower. In the case of obtaining polarized light with strong illuminance in the wavelength range of 3 6 0 to 3 7 0 nm, when using this filter, the wavelength range of P polarized light with strong illuminance is in the range of 3 5 5 to 3 7 5 Nanometers, even when the film thickness is shifted by 10% for every 25% of the film thickness, the strong polarized light in the wavelength range of 3 4 5 to 3 6 5 nm can be obtained. . In addition, even when the film thickness is reduced by 25% and the wavelength range is shifted toward the long wavelength side by 10 nm, strong polarized light in the wavelength range of 3 65 to 3 8 5 nm can be obtained. That is, when the film thickness is changed within the range of ± 2 5%, the required wavelength range of 3 60 ~ 3 70 nm (even if it is not in the entire field, at least a part of the field) can be performed. Polarized light. Therefore, when compared with the case of Figs. 9 and 10, P-polarized light having a wavelength range of 3 60 to 3 70 nm can be obtained. Although the polarizing filter shown in FIG. 1 is formed by forming two types of films on both sides of a transparent substrate, as shown in FIG. 5, it is also possible to cut short-wavelength multilayer films and cut long-wavelength films. The multilayer films are respectively formed on different substrates, so that they are juxtaposed with a distance of -16- (13) (13) 200307165 minutes without incident light interference. Fig. 5 (a) is an example in which the short-wavelength multilayer film 1 and the long-wavelength multilayer film 2 are cut out on the light incident sides of two transparent substrates 4, 5 respectively. As described above, the transparent substrates 4, 5 are arranged so as to be inclined only at a predetermined angle, and the distance of the multilayer films 1, 2 is set to a distance that does not interfere with the wavelength of incident light. Even in the polarizing filter having the above-mentioned configuration, P polarized light having a predetermined wavelength range can be obtained in the same manner as that shown in Fig. 1 above. The arrangement of the transparent substrates 4, 5 and the multilayer films 1, 2 is not limited to the above. As shown in FIG. 5 (b), the multilayer films 1, 2 may be disposed on the light emitting side of the transparent substrates 4, 5. As shown in FIG. 5 (c), the multilayer films 1, 2 are arranged in pairs, or as shown in FIG. 5 (d), they can also be provided on the light incident side of the transparent substrates 4, 5. And the light exit side. Further, the cut long-wavelength multilayer film 2 may be provided on the transparent substrate 4 on the light incident side, and the cut short-wavelength multilayer film 1 may be provided on the transparent substrate 5 on the light exit side. In addition, the angles of the substrates 4 and 5 may be different from the optical axis of the incident light. FIG. 6 is a diagram showing a configuration example of a polarizing filter that can change the optical axis angle of incident light to the transparent substrates 4 and 5 on which the multilayer film is formed. Fig. 6 (b) is a perspective view of the polarizing filter shown in Fig. 6 (a). The polarizing filter shown in FIG. 6 is the same as that shown in FIG. 5 in that transparent substrates 4 and 5 having two types of multilayer films are formed so that light is not interfering with each other and are arranged in parallel at a sufficient distance. Rotary shafts 6 are mounted on both sides of the transparent substrates 4 and 5. The rotation axis 6 is supported by a support element (not shown) in a rotatable manner. -17- (14) (14) 200307165, a transparent substrate 4 with a multilayer film formed. The optical axis of 5 pairs of incident light can be set at any Angle. If the angle of the optical axis of the incident light of the multilayer film is adjustable, the cut-off wavelength λ of the multilayer film can be shifted to some extent. Therefore, even when the multilayer film is formed due to an error in the thickness of the multilayer film, Cut-off wavelength; when I is somewhat different from the design, when the angle of the transparent substrate 4 or 5 is adjusted, the cut-off wavelengths of the multilayer films formed on the transparent substrates 4, 5 can be matched with each other. Fig. 7 is a diagram showing an example of the configuration of a polarized light irradiation device used as a polarizing element and used for light alignment in the polarizing filter of the present invention. As shown in the same figure, the polarized light irradiation device for light alignment is composed of an ultra-high pressure mercury lamp 1 1 and an elliptical light collecting mirror 1 2 and a first plane mirror 1 3, and a condenser lens 15 and a shutter 14 and The second plane mirror 16 is composed of a collimator lens 17 and a polarizing filter 18 of the present invention. In addition, an alignment microscope 19 is provided, and the alignment marks of the mask M and the workpiece W can be observed by using the alignment microscope 19, and the positions of the mask M and the workpiece W can be aligned. In Fig. 7, the ultraviolet rays radiated from the lamp 11 are collected by the elliptical collecting mirror 12 and reflected by the first plane mirror 13 and incident on the condenser lens 15. The light emitted from the condenser lens 15 is reflected by the second plane mirror 16 and then enters the polarizing filter 18. The polarizing filter 18 is a polarizing filter having the structure shown in the above Figures 1, 5, and 6. For example, the wavelength is 3 4 5 to 3 8 5 nm (when the illuminance of P polarized light is strong, it is 3). 5 5 ~ 3L nanometer) only P polarized light is emitted. However, in the polarizing filter 18, it is preferable that the light is incident at a predetermined incident angle (= 45 °) (15) (15) 200307165. On the incident side of the polarizing filter 18, there must be The light becomes a collimator lens or collimator mirror for parallel light. The P polarized light emitted from the polarizing filter 18 is irradiated to a desired position of the light alignment film (workpiece W) through the photomask M to perform photo alignment processing. In the case where the polarized light is irradiated to the entire surface of the workpiece W, the photomask M is not required, and the photomask M need not be aligned with the position of the workpiece W. [Effects of the Invention] As described above, the present invention can obtain the following effects. (1) The polarizing filter is composed of two types of multilayer films. The first multilayer film is made of a short-wavelength multilayer film that cuts off light below a specific wavelength, and the second multilayer film is made of an ablation film. Long-wavelength multilayer membranes are cut away from light above a specific wavelength, so that it is possible to achieve a small and inexpensive polarizing filter with a wide range of polarized wavelengths. (2) Since it can be used in the ultraviolet field, it can be used as an exposure device for photo-alignment film alignment. (3) It is not necessary to tilt the polarizing filter to the Brewster angle, and it is possible to obtain polarized light with a good extinction ratio. Since the tilt angle of the polarizing filter can be reduced, the size of the filter can be made smaller. In addition, the device can be made smaller in the height (optical axis) direction. (4) Since the polarizing filter of the present invention can be applied to a polarized light irradiation device, the device can be miniaturized. In addition, it is easily suitable for the wavelength range where the light alignment efficiency of the light alignment film is high, so the processing efficiency can be improved -19- (16) (16) 200307165 [Brief Description of the Drawings] Figure 1 shows the implementation of the present invention Figure 2 shows an example of a polarizing filter configuration example. Figure 2 is a view showing an example of the characteristics of a multilayer film formed on one surface of the transparent substrate of Figure 1; Figure 3 is a view showing the other surface of the transparent substrate of Figure 1 Figure 4 shows a characteristic example of the multilayer film formed on the top; Figure 4 shows the transmittance characteristics of the polarizing filter shown in Figure 1; Figure 5 shows the cut short-wavelength multilayer film formed on different substrates and A diagram of a polarizing filter with a long-wavelength multilayer film cut out; FIG. 6 is a diagram showing a configuration example of a polarizing filter that can change the optical axis angle of incident light to a transparent substrate on which a multilayer film is formed; FIG. 8 is a diagram showing an example of a polarizing light irradiation device for light alignment of a polarizing filter of the present invention; FIG. 8 is a diagram showing a polarizing element in which a glass plate is configured to be inclined at a Brewster angle; FIG. Cutting of polarized light near nanometers FIG short wavelength polarization filter characteristic of the embodiment; FIG. 10 is a diagram obtained polarizing filter characteristic of the long wavelength cut embodiment of a wavelength of light polarized in the vicinity of 365 nm. -20- (17) 200307165 [Description of symbols] 11 Screen 3 Transparent substrate 1 First multilayer film 2 Second multilayer film 4,5 Transparent substrate 6 Rotary axis
11 超高壓水銀燈 12 橢圓集光鏡 13 第1平面鏡 14 快門 15 積分器透鏡 16 第2平面鏡 17 瞄準透鏡11 Ultra-high-pressure mercury lamp 12 Elliptical collector 13 First flat mirror 14 Shutter 15 Integrator lens 16 Second flat mirror 17 Aiming lens
18 偏光濾膜 19 對齊顯微鏡 Μ 光罩 W 工件 -21 -18 Polarizing filter 19 Alignment microscope Μ Mask W Workpiece -21-