TH99448A - A method for producing frontal electrodes with TCO as a primary component for use in photovoltaic equipment or the like. - Google Patents

Abstract

DC60 (02/04/51) Some exemplary applications of this invention relate to electrodes (e.g., front electrodes) for use in photoelectric devices or similar applications. In some exemplary applications, front electrodes with a transparent conductive oxide (TCO) as the main component for use in photoelectric devices may be produced by spraying a ceramic target in a specially modified gas atmosphere to achieve optimal electrical and optical properties of the resulting TCO coating. For example, the use of specific types of atmosphere in the spraying process can make the resulting TCO coating (e.g., made of or containing zinc oxide, zinc-aluminum oxide and/or ITO) more resilient to subsequent high temperatures that may be used during the fabrication of photoelectric devices. In addition, the processing energy generated by high temperatures may also be utilized to improve the crystalline characteristics of the TCO. Some exemplary applications of this invention relate to electrodes (e.g., front electrodes) for use in photoelectric devices or similar applications. In some example, front electrodes with total conductive oxide (TCO) as the main component for use in photoelectric devices may be manufactured by spraying ceramic targets in a specially modified gas atmosphere to achieve optimal electrical and optical properties of the resulting TCO coating. For example, the use of specific types of atmosphere in the spraying process can make the resulting TCO coating (e.g., made from or containing zinc oxide, zinc-aluminum oxide, and/or ITO) more resistant to subsequent high temperatures that may be used during the manufacture of photoelectric devices. In addition, the processing energy generated by high temperatures may also be utilized to improve the crystalline characteristics of the TCO.

Claims (30)

1. The method for manufacturing photovoltaic devices consists of the following steps: Preparation of a glass substrate; coating of at least one ceramic target in an atmosphere to create a highly transparent conductive electrode consisting of zinc oxide on the glass substrate. The ceramic target contains zinc oxide, and the coating atmosphere contains both argon and oxygen gases with an oxygen-to-total ratio of 0.00001 to 0.0025; and the use of the glass substrate with at least one electrode on top to manufacture the photovoltaic device, which includes at least one semiconductor film. 2. The method described in Reputation 1, whereby the use of such glass substrate with at least electrodes on it in the manufacture of a photoelectric device, shall consist of the connection of that glass substrate to another glass substrate with at least electrodes and a semiconductor film between them. 3. The method as specified in Claim 1, where the semiconductor film consists of amorphous silicon or CdTe. 4. The method as specified in Claim 1, whereby the photoelectric device also consists of at least one electrode and/or rear reflector positioned between another glass substrate and a semiconductor film. 5. The method as specified in Claim 1, where the electrodes still consist of aluminum and where the electrodes have more zinc than aluminum and have a sheet resistance (R5) that is approximately 50 ohms/channel lower. 6. The method as specified in Claim 1, where the electrodes have a sheet resistance (Rs) of no more than approximately 15 ohms/channel. 7. The method as specified in Claim 1, where the electrodes also contain aluminum and the aluminum content of the electrodes and/or targets is approximately 1-5%. 8. The method specified in Claim 1, where the electrodes are in direct contact with the glass substrate. 9. The method described in Claim 1, which also involves creating an anti-reflective coating on the glass substrate so that the anti-reflective coating is positioned between the glass substrate and the electrodes. 10. The method as specified in Claim 1, where the atmosphere in which the target is coated has an oxygen to total gas ratio of 0.0001 to 0.002. 11. The method as specified in Claim 1, where the atmosphere in which the target is coated has an oxygen to total gas ratio ranging from 0.0001 to 0.0015. 12. Method for manufacturing electrodes for use in electronic devices. This method consists of the following steps: preparation of a glass substrate; spraying at least one ceramic target in an atmosphere to coat a sufficiently transparent conductive electrode consisting of zinc oxide on a glass substrate. The ceramic target consists of zinc oxide, and the spraying atmosphere contains both argon and oxygen gases with an oxygen-to-total ratio ranging from 0.00001 to 0.0025. 13. The method specified in claim 12, which also involves providing a semiconductor film made of amorphous silicon or CdTe adjacent to the electrodes. 14. The method as specified in claim 12, where the electrodes are also made of aluminum, and where the electrodes contain more zinc than aluminum, and the sheet resistance (Rs) is less than approximately 50 ohms/channel. 15. The method as specified in Claim 12, where the electrodes also contain aluminum and the aluminum content of the electrodes and/or targets is approximately 1-5%. 16. The method as specified in Claim 12, where the atmosphere in which the target is coated has an oxygen to total gas ratio of 0.0001 to 0.002. 17. The method as specified in Claim 12, where the atmosphere in which the target is coated has an oxygen to total gas ratio of 0.0001 to 0.002. 18. The method for manufacturing photoelectric devices consists of the following steps: the preparation of a glass substrate; the coating of at least one ceramic target in an atmosphere to coat a sufficiently transparent conductive electrode consisting of indium tin oxide onto the glass substrate, where the ceramic target is composed of indium tin oxide; the coating atmosphere contains both argon and oxygen gases with an oxygen-to-total ratio between 0.003 and 0.017; and the use of the glass substrate with at least one electrode on it to manufacture a photoelectric device, which includes at least one semiconductor film. 19. The method specified in claim 18, whereby the use of such glass substrate with at least electrodes on it to produce a photoelectric device, shall involve the connection of such glass substrate to another glass substrate with at least electrodes and a semiconductor film between them. 20. The method as specified in claim 18, whereby the semiconductor film is made of amorphous silicon or CdTe. 21. The method specified in Claim 18, where the electrodes have a sheet resistance (Rs) of less than approximately 50 ohms/channel. 22. The method specified in claim 18, where the electrodes are in direct contact with the glass substrate. 23. The method described in Claim 18, which also involves creating an anti-reflective coating on the glass substrate so that the anti-reflective coating is positioned between the glass substrate and the electrodes. 24. The method as specified in Claim 18, where the atmosphere in which the target is coated has an oxygen to total gas ratio ranging from 0.004 to 0.016. 25. The method as specified in Claim 18, where the atmosphere in which the target is coated has an oxygen to total gas ratio of 0.005 to 0.015. 26. Method for manufacturing electrodes for use in electronic devices. This method consists of the following steps: preparation of a glass substrate; spraying at least one ceramic target in an atmosphere to coat the electrode, which has a sufficiently transparent conductivity, consisting of indium tin oxide, onto the glass substrate. The ceramic target consists of indium tin oxide, and the spraying atmosphere contains both argon and oxygen gases with an oxygen-to-total ratio ranging from 0.003 to 0.017. 27. The method specified in claim 26, which also involves providing a semiconductor film made of silicon or CdTe adjacent to the electrodes. 28. The method as specified in Claim 26, where the atmosphere in which the target is coated has an oxygen to total gas ratio ranging from 0.004 to 0.016. 29. The method as specified in Claim 26, where the atmosphere in which the target is coated has an oxygen to total gas ratio ranging from 0.008 to 0.014. 30. The method as specified in claim 26, where the target consists of more indium than tin.