TH62030B - How to make it through laser treatment - Google Patents

Abstract

DC60 provides a method for processing the laser. Which although substrates formed with laminate sections, which include A number of functional devices will be thick. Can cut substrates and laminate sections with high precision This laser processing method is treated with a laser substrate 4 with a laser L, while the end surface 21 is used as the laser entrance surface and the address of the light point P is within the substrate 4 to To be formed, modification area 71, 72, 73 is inside substrate 4. Here, HC 73 modification area is formed at The position between the modified area separates the nearest part 72 with the end face 21 and the end face 21 in order to cause the fracture 24, which extends along the line to cut from the modified area HC 73 to the end face 21, therefore When the expansion bar was attached to the end 21 of substrate 4 and expanded. Fracture is smoothly shifted from substrate 4 to laminate section 16 via a section 72, where substrate 4 and laminate section 16 can be cut along the line to cut with thickness. High precision has provided a method for making it through laser processing. Which although substrates formed with laminate sections, which include A number of functional devices will be thick. Can cut substrates and laminate sections with high precision This laser processing method is treated with a laser substrate 4 with a laser L, while the end surface 21 is used as the laser entrance surface and the address of the light point P is within the substrate 4 to Here, the HC 73 modification area is located inside the substrate 4. Here, the HC 73 modification area is positioned at the Between the modified area, split into part 72 closest to the end face 21 and end face 21 in order to produce fracture 24, which extends along the line to cut from the modified area HC 73 to the end face 21 as follows. That, when the expansion bar is attached to the end face 21 of substrate 4 and is expanded, the crack will slide smoothly from substrate 4 to laminate section 16 by area. Modified raised to 72 segments where 4 substrates and 16 laminates can be cut along the line for high precision cuts.

Claims (9)

Claims (all) which will not appear on the advertisement page: 1. Laser processing method by substrate (4) with the front surface (3) formed by laminate part. (16) including a number of (15) functional devices. And the rear surface (21) with laser light (L) while addressing the optical convergence point (P) within the substrate (4) in order to form The modified area (7) becomes the starting point for the cut (8) within the substrate (4) along the line to cut (5) of the substrate (4), that method consists of a step Part of: Forming a number of rows of the first modification area (72) inside the substrate (4) along the line to cut (5), and then on. At least one row of the second modification region (73) is placed inside the substrate (4) along the cutting line (5) at the position between the first modification area. (72) closest to the posterior surface And the posterior surface (21) is so that it causes a fracture which extends along the line to cut (5) from the second modification area (73) to that posterior surface, where a number of rows of the modified area one (72) is formed in series in the direction of substrate thickness. (4) that, and where the distance Between each position where the point converges light The (P) of the laser light (L) is located when forming the adjacent modified region (72), it is 24 μm to 70 μm in the direction. Thickness of the substrate 2. Laser processing method according to claim 1, where the substrate is the semiconductor substrate and where the first and second modification regions include the substrate. 3. Melting method 3. Laser method according to claim 1 or 2, where the first and second modification regions are Continuously forming from the side further from the stern while using the stern face as the surface. Entrance to the laser light 4. How to make it through the laser process according to one of the claims 1 to 3. Where the laser has energy of 2 microjoules to 50 microjoules when forming the first modification area 5. How to make it through laser processing according to claims 1 to 4, any one Where the laser has energy of 1 microjoule to 20 microjoules when forming the first modified area 6. Laser processing method according to one of claims 1 to 5. Where the laser beam when forming The first modification area has more energy when forming the second modification area. 7. Laser processing method according to claim 6, where the laser energy The first modification is 1.6 to 3.0 when the laser energy for forming the second modification area is I 8. Laser processing method according to claims 1 to 7. Where each position is determined at At the laser light convergence point, when forming a modified area at one neighborhood, there will be a distance of 24 micrometers to 70 micrometers in between. 9. Laser processing method according to claims 1 to 8. Where will address the convergence point of light Of laser light at a location with a distance of 50 μm to [(substrate thickness) x 0.9] μm from the end surface when forming the first modified area 1 0. Laser processing method according to claim 1 To any of the 8 Where will address the convergence point Beam of laser beam at a distance of 20 μm to 110 μm from the end surface when Forming the second modification area 1 1. Laser processing method according to claim 1, where, when forming a number of rows of the second modification area, the laser beam when forming the first modification area has more energy when forming the first modified area. The second closest to the end surface of the substrate 1. 2. Laser processing method according to claim 11, where, when forming a number of rows of the second modified area, the laser energy for forming the second modified area further from the end surface. Of the substrate is 1.3 to 3.3, when the laser energy for forming the near second modified region The end of the substrate is I 1. 3. Laser processing method according to claim 11, where, when forming a number of rows of the second modification area, the energy of the laser for forming the first modification area is 1.3 to 3.3 when the laser energy for forming. The second closest modified area to the substrate end surface is I 1. 4. Laser processing method according to claim 1, where, when forming a number of rows of the second modified area, the address of the laser light convergence point when forming the nearest second permeable area. At the end surface of the substrate there is a distance of 20 μm to 110 μm and where it is located at the laser light convergence point when forming the second nearest modified region. The second end surface of the substrate has a distance of 140 micrometers or less 1. 5. How to make it through laser treatment according to one of the claims 1 to 14. Which consists longer with steps When cutting substrate and laminate along the line to cut 1 6. A semiconductor chip consisting of a substrate And laminate part Placed on the front surface of the substrate, including functional devices Where a number of rows of the first modified region extending along the substrate end surface are It is molded into the lateral surface of the substrate so that it is in series in the direction of the substrate thickness and where at least one second modified row extends along the stern surface. Will be formed It is located between the one nearest modified area and the end face on the side face 1. 7. A semiconductor chip according to claim 16, where the substrate is a semiconductor substrate. And where the bending area The first and second variations, including the melting area 1 8. Semiconductor chip according to claim 16 or 17, where the end of the first modified region on the surface The anterior and apex of the second modified region, on the opposite face, is 15 μm to 60 μm between them. 9. A semiconductor chip in accordance with any of Clause 16 to 18. Where the first modified region has a total width of 40 μm to [(substrate thickness) x 0.9] μm in the direction of substrate thickness.