TH52676B - Methods for cutting semiconductor substrates - Google Patents

Abstract

DC60 (04/12/46) After the planned cross-section 9 based on the treated area 13 has been formed in the interior of the silicon wafer 11 by means of a multiphoton absorption. As a result, silicon wafer 11 is precisely cut into semiconductor chip 25 along the contour of the planned cross section. 9 At this time, the cutting surfaces 25a, 25a face-to-face of the semiconductor chip 25 close to each other will Have been separated from the coherent state; Therefore, the resins layer for mounting to the socket 23 will also be cut along the contour of the planned cross section 9, so silicon wafer 11 and resin layers can be cut for efficient bonding of the socket 23. More than in the case of cutting silicon wafer 11 and resin layer for socket attachment 23 by using blade without substrate cut 21 is much after the planed cross section 9 based on the processing area. Melting 13 is formed in the interior of silicon wafer 11 by causing multiphoton absorption to occur. Adhesives 20 attached to silicon wafer 11 are stretched. As a result, silicon wafer 11 will be cut precisely as semiconductor chip 25 along the contour of the planned cross section 9.At this time, the cutting surfaces facing each other 25a, 25a of the closely 25 semiconductor chip will Have been separated from the coherent state; Thus, the resin layer for the mounting of the socket 23 is also cut along the contour of the planned cross-section 9, so silicon wafer 11 and resin layers can be cut for more efficient bonding of the socket 23. In the case of cutting silicon wafer 11 and resin layer for mounting to the socket 23 using the binding blade without cutting the substrate 21 significantly.

Claims (8)

1. Method of cutting a semiconductor substrate, the above method consists of a procedure of; Creating a cross section where the semiconductor substrate should be cut by laser irradiation in The condition in which the convering point of the laser beam is positioned within it. Semiconductor substrate The plate was attached with a resin layer to be attached to the insert in the middle for the formation of the modified area formed by the absorption of a multiphoton within the semiconductor substrate and its section. The cut has been formed by the modified area; and Cutting the said semiconductor substrate And a resin step to attach to the aforementioned socket along the Of the cross section by stretching the sheet After the forming process 2. Method of cutting the semiconductor substrate, the method consists of steps of; Creating a cross section where the semiconductor substrate should be cut by laser irradiation in The condition in which the convergence point of the laser beam is positioned within the semiconductor substrate, the plate is attached, has a resin layer for bonding to the insert in the center. To form the modified area It consists of an area through the molten process that is formed by absorption of multiple photons. Comes inside a semiconductor substrate Under conditions which cause power density, the peak value at convergence point is 1x108 (W / cm 2) or more. And the pulse width is 1 microsecond or less. And the cross section is formed by the modified area consisting of the annealing area; and the cutting of the semiconductor substrate. And a resin layer for attaching to the said socket along the Of the cross section by stretching the sheet After the aforementioned forming steps 3. Method of cutting a semiconductor substrate, such a method consists of a procedure of; Section formation where the semiconductor substrate should be cut by laser irradiation in The condition in which the convergence point of the laser beam is positioned within the semiconductor substrate, the plate is attached, has a resin layer for bonding to the insert in the center. For the formation of the modified area; And cutting of the said semiconductor substrate And a resin layer for attaching to the said socket along the Of the cross section by stretching the sheet After the forming process 4. Method of cutting the semiconductor substrate, the method consists of steps of; Creating a cross section where the semiconductor substrate should be cut by laser irradiation in The condition in which the convergence point of the laser beam is fixed is positioned within the semiconductor substrate to which the sheet is attached. For the formation of a cut area; and Cutting the said semiconductor substrate along the said cross section by stretching the sheet after the said forming process 5. Method of claim 3 or claim No. 4. Where the modified area is Through the molten operation. 6. Method of one of the claims 1 to 4. Where cracks are made to a matte finish The face of the semiconductor substrate on the side where the laser beam hits. The cross-section is the starting point in the process where the planned cross-section has been formed. 7. One of the Claims 1 to 4 method. Where cracks are made to a matte finish The back of the semiconductor substrate is on opposite side to the side in which the laser beam is affected, with the cross-section of the schematic as a starting point. In the aforementioned procedure where the planned cross-section has been formed, 8. Any one of Clause 1 to 4 method Where cracks are made to a matte finish The face of the semiconductor substrate on the side where the laser beam hits. And the back surface of the said semiconductor substrate on opposite sides of that With such a planned cross-section as a starting point In the aforementioned procedure where the planned cross section is formed 9. Methods of cutting a semiconductor substrate, the above method consists of the steps of: Which should cut the semiconductor substrate by irradiating a laser in The condition at the point of entry of the laser beam is set to be positioned within the semiconductor substrate, which is attached to the plate, with a resin layer for bonding to the insert in the center. To form the modified area Formed by the modified area; And cutting the said semiconductor substrate along the said cross section by inducing Throttle up in the said semiconductor substrate along the cross section. After such formation; And cutting of the resin layer for attaching the socket along the cutting surface of the semiconductor substrate. Said by stretching the sheet After the aforementioned semiconductor cutting procedures 1 0. Method of cutting a semiconductor substrate, the above method consists of a procedure of; Bending formations where the semiconductor substrate should be cut by laser beams in The condition in which the convergence point of the laser beam is positioned within the semiconductor substrate, the plate is attached, has a resin layer for bonding to the insert in the center. To form the modified area Consisting of an area through the molten operation formed by uptake of a multiphoton Comes within the substrate Under conditions where the power density, the peak value at convergence point is 1 x 108 (W / cm 2) or more. And the pulse width is 1 microsecond or less. And the cross section is formed by the modification area that forms the thread through the annealing process; Cutting the said semiconductor substrate along the said cross section by inducing Throttle up in the said semiconductor substrate along the line of the said cross section. After such formation process; And cutting of the resin layer for the attachment of the lower sockets along the cutting surface of the semiconductor substrate. Said by stretching the sheet After cutting the semiconductor substrate 1 1. Method of cutting a semiconductor substrate, the above method consists of a procedure of; Section formation where the semiconductor substrate should be cut by laser beam in The condition in which the convergence point of the laser beam is positioned within the semiconductor substrate, the plate is attached, has a resin layer for bonding to the insert in the center. For the formation of the modified area; Cutting the said semiconductor substrate along the said cross section by inducing Throttle up in the said semiconductor substrate along the cross section. After such formation process; And cutting of the resin layer for attaching the socket along the cutting surface of the semiconductor substrate. Said by stretching the sheet After cutting the semiconductor substrate 1 2. Method according to claim 11, where the modified area is the area through the melting process 1 3. Method of cutting a semiconductor substrate that forms a functional component on the surface. Page of the semiconductor substrate It has been cut along the line of the planned cut. Such method Assembled with the steps of; Formation of the modified area by laser light irradiation , Using the back surface of the substrate The semiconductor is the incident plane of the laser light. And the alignment of the focal point Of light in the interior of the said semiconductor substrate And the formation at the starting point of the cut comes up inside at a specified distance from the plane of the laser incident along the cut line according to the plan. By relying on the modified area; The stretching gripping assembly is mounted on the back surface of the semiconductor substrate by It relies on the resin layer to attach to the inserted sockets. After the formation of the starting point of the cut; and Cutting the aforementioned semiconductor substrates and a resin layer to attach them to the sockets along the Of the planned cutting line after the said gripping assembly is installed. By making the components fasten Such a handle extends 1 4. Procedures of Clause 13 include further the procedure of; The back of the skin The semiconductor substrates in such a way that the substrates have the required thickness prior to the formation at the beginning of the cut. 5. Method according to Clause 13 or Clause 14, where the modification area has a crossing area. Practice to fuse 1 6. Procedures in accordance with Clause 13 to 15, any one of them. Where at the beginning of the cut Been formed Cracks starting from the starting area, the cut will be fulfilled to The front surface of the said semiconductor substrate 1 7. Means according to one of Clause 13 to 15. Where at the beginning of the cut Been formed Cracks starting from the starting area, the cut will be fulfilled to The back surface of the said semiconductor substrate 1 8. Method according to Clause 1 to 3, any one Where, when the starting point of such cut has been Forming Cracks starting from the starting area, the cut is made to the skin. The front and back surface of the semiconductor substrate.