TH50367A - Bath and process for non-galvanic tin plating of copper and copper alloys - Google Patents

Abstract

DC60 (31/01/44) This invention describes a process for copper non-galvanic tin plating. And copper alloys by precipitation of tin from methane, sulfonic acid and tin-containing electrolytes In which this process will act as a complex substance To describe the process that will lead to A durable, solderable tin layer. At the same time, the invention suggested that the electrolyte contained at least the metal mixtures. One to form a barrier to diffusion in this tin layer. The invention describes a process for copper non-galvanic tin plating. And copper alloys by precipitation of tin from methane, sulfonic acid and tin-containing electrolytes In which this process will act as a complex substance To describe the process that will lead to A durable, solderable tin layer. At the same time, the invention suggested that the electrolyte contained at least the metal mixtures. One to form a barrier to diffusion in this tin layer.

Claims (9)

1. bath for the non-galvanic plating of the tin layer over the copper base layer. Or copper alloys, a composite bath; Electrolytes, which contain tin; acid; Agent as a complex substance; Metal mixtures which suppress the diffusion of the base layer material through the tin layer; And anti-oxidation agents 2. Bath of claim 1 where the tin concentration in the bath is 1 to 30 g / l. 3. Bath of claim number 1, where tin-containing electrolytes are composed of tin salts. Second valence type 4. Bath of claim No. 1 where the second valence tin salt is made up of tin. Methane sulfonate 5. Bath of claim 1 by bath with pH equal to 0 to 3. 6. Bath of claim number 1, where the acid contains methane sulfonic acid. 7.Bath of claim No. 6 where the methane sulfonic acid concentration in the bath is 5 to 200 g / l. 8. Bath of claim No. 1 where the agent is a complex containing thiourea. Or a derivative of thiourea 9. Bath of claim 8 where the concentration of thiourea or its derivatives is 10-200 g / l 1. 0. Bath of claim 1, which is supplemented with wetting agent 1 1. Bath of claim 1 where the wetting agent concentration in bath is 1 to 10 g / l 1. 2. Bath for non-galvanic plating of tin layer over copper base layer or Copper alloy, a composite bath; Electrolytes containing tin where the tin concentration in bath is 1 to 30 g / l; acid; Agent as a complex substance; And metal mixed with the diffusion of the base material through the tin layer, where the metal mixed is Indium in a concentration of 1 to 500 mg / l 1 3. Bath for non-galvanic plating of a stable tin layer for diffusion. On a base layer of copper or copper alloys, the bath is primarily composed of thiourea, methane sulfonic acid, tin methane sulfonate, wetting agent and bismuth. 1 4. Bath of claim 13 where the concentration, in bath, of thiourea equal to 100 g / l, of methane sulfonyl acid equal to 100 g / l, of tin equal 5 g / l, wetting agent 5 g / l and bismuth 30 mg / l 1. 5.Bath for non-galvanic plating of a stable tin layer for diffusion. On a base layer of copper or copper alloys, bath is composed mainly of urea, methane sulfonic acid, tin methane sulfonate, wetting agent, antioxidant. Oxidation and titanium 1 6. Bath of claim 15 where the concentration, in bath, of thiourea is 100 g / l, of methane sulfonic acid equal to 100 g / l, of tin. Equal to 15 g / l, wetting agent 3 g / l, anti oxidation agent 5 g / l, and titanium equal to 5 mg / l 1. 7.Bath for non-galvanic plating of a stable tin layer for diffusion. On a base layer of copper or copper alloys, bath is composed mainly of thiourea, methane sulfonic acid, tin methane sulphonate, wetting agent, substance Against oxidation and indium 1 8. Bath of claim 17 where the concentration, in bath, of thiourea is 120 g / l, of methane sulfonic acid equal to 140 g / l, of tin. Equal to 15 g / l, wetting agent 5 g / l, anti oxidation agent 5 g / l and indium 50 mg / l 1. 9. Process for plating tin layer over copper base layer or copper alloy, assembly process; Contact with a copper base layer or a copper alloy with a bath. Which includes Tin electrolytes, acids, complex agents And metal mixtures which suppress the spread Disperse the base material through the tin layer where the tin concentrations in the bath range from 1 to 30 g / l and the metal contaminants in the bath range from 1 to 500 mg / l and tin precipitation. And non-galvanic mixed metal from Bath to the base layer, thus forming A tin layer on the base layer that blocks the diffusion of metal contained therein 2 0. Process of claim 19 where tin electrolytes are composed of salt. Of the second valence tin 2 1. Process of claim 20 where two valence tin salts are composed of Combine with tin methane sulfonate 2. 2. Procedure for Clause 21, where Bath is equal to 0 to 3 2. 3.Process of claim 22, where acids are made up of methane sulfonic acid 2. 4. Process of claim 23 where the methane sulfonic acid concentration in the bath is 5 to 200 g / l 2. 5. Process of claim 24, where the agent is a complex compound. Combined with thiourea or thiouurea derivative and the concentration of the reactant in bath was 10-200 g / l 2. 6. Process of claim No. 19, where the mixed metal is selected from a group consisting of silver, bismuth, nickel, titanium, zirconium, indium and its mixtures 2. 7. Process of Clause 19, where Bath continues to be included with the Act. Wet and the concentration of wetting agent in the bath is 1 to 10 g / l 2. 8. Process of claim 19, where Bath continues to include wetting agent 2. 9. Process of claim No. 19, where metal is mixed with indium 3. 0. Process of claim No. 19, where metals are mixed, ie, indium and bath, also contain Also included next with wetting agent 3. 1. Process of Clause 19, where metals are mixed, Indium and Bath, also contain Further included with anti-oxidation agent 3 2. Process of Clause 19, where metals are mixed, Indium and Bath, also contain Further included in the anti-oxidation agent and wetting agent 3 3.Procedure of claim 19, where metal mixtures are bismuth 3. 4. Process of claim 19, where metals mixtures, bismuth and baths, also contain Also included next with wetting agent 3. 5. Process of claim No. 19 where metals mixtures, bismuth and baths, also contain Further included with anti-oxidation agent 3 6. Process of claim 19, where metal mixtures are bismuth and baths also contain Further included with anti-oxidation agent and wetting agent3 7. Process for plating tin layer over copper base layer or copper alloy, assembly process; Touching the base layer of copper or A copper-bath alloy with a pH equal to 0 to 3, containing tin methane sulfonate, methane sulfonic acid, a complex of Thiourea or thiourea derivative in bath concentrations between 10 and 200 g / l, wetting agent in bath concentrations between 1 and 10 g / l. Antioxidant. Selection from a group of dents and mixed metals including silver, bismuth, nickel, titanium, zirconium, indium And a mixture of that; And precipitation of tin and non-galvanic mixed metal from Bath to base layer 3 8. Process for plating tin layer over base layer of copper or copper alloy, assembly process; Contact of a copper base layer or copper alloy with a bath, which includes Tin electrolytes, acids, complexing agents, anti-oxidation agents and metal mixtures through which the diffusion of the base material passes through the tin layer; And precipitation of tin and non-galvanic mixed metal from Bath to base layer 3 9. Process of claim 38 where tin-containing electrolytes Tin salt of the second lense type 4 0. Process of claim 39, where two valence tin salts are composed of Combine with tin methane sulfonate 4. 1. Process of claim 38 where Bath has a pH of 0 to 3 4. 2. Process of claim 38, where the complexing agent is composed of thiourea or thiourea derivative and the concentration of the complex agent in the bath is 10-. 200 g / l 4 3.Procedure of claim 38, where the mixed metal is selected from a group consisting of silver, bismuth, nickel, titanium, zirconium, indium and its alloys. 4.Process of claim 38, where the bath continues to include wetting agent 4. 5.Procedure of claim 38, where metal is mixed with indium 4. 6. Process of claim 38 where the metal is mixed with bismuth 4. 7. Process for plating tin layer over copper base layer or copper alloy, assembly process; Contact with a copper base layer or copper alloy to a bath. It consists mainly of thiourea, methane sulfonic acid, tin methane subphonate, wetting agent, anti-oxidation agent. And titanium; And the non-galvanic tin and titanium precipitation from Bath to the base layer, where diffusion The titanium distribution of the base layer material goes through the tin 4 layer. 8. Process of claim No. 47 where the concentration, in bath, of thiourea equal to 100 g / l, of methane sulfonic acid equal to 100 g / l, of tin equal 15 g / l, wetting agent 3 g / l, anti oxidant 5 g / l, and titanium equal 5 mg / l 4. 9. Process for plating tin layer over copper base layer or copper alloy, assembly process; Contact with a copper base layer or copper alloy to a bath. It consists primarily of thiourea, methane sulfonic acid, tin methane sulfonate, wetting agent, anti-oxidation agent and indium; And the non-galvanic tin and titanium precipitation from Bath to the base layer, where diffusion The titanium dispersion of the material from the base layer material goes through the tin layer 5. 0. Process of claim 49 where the concentration, in bath, of thiourea is 120 g / l, of methane sulfonic acid equal to 140 g / l, of tin is equal to 15 g / l, wetting agent 5 g / l, anti oxidation agent 5 g / l and indium 50 mg / l.