TH32577B - Mos-type transistors and the process of making these transistors. - Google Patents

Abstract

The revealed DC60 (14/07/40) is a moss-type transition. and the process of creation Moss type transistor Formation of each silicon gate electrode pattern was made. On top of the oxide film of the gate forming on the silicon base body, the doping was applied to the silicon base body by using the frame of the gate electrode as a mask, followed by Boosting the added impurity, to form a layer of permeation in the surface layer. of the body, the base part of the silicon substance Form the stacking layer barrier film in such a way as to cover the gate electrode pattern, removing the top portion of the stacking layer barrier film. Stacked out to reveal the top part of each gate electrode pattern. perform a pattern removal The image of the gate electrode is revealed by selectively etching the latch. After that, the metal material is etched into the formed indentation by taking the shape of each of the gate electrodes. out, to form a CMOS transistor. Revealed is a MOS type transistor. and the process of creating Moss type transistor Formation of each silicon gate electrode pattern was made. On top of the oxide film of the gate forming on the silicon base body, the doped impurity was introduced into the silicon base body by using the frame of the gate electrode as a mask. Followed by pushing the added impurities. to form a layer of permeation in the surface layer of the body, the base part of the silicon substance Remove the upper part of the film to separate the shelf. Stacked out to reveal the top of each gate electrode pattern. perform a pattern removal The image of the gate electrode was revealed by selective etching of the bolt. After that, the metal material was etched into the deep concave formed by removing the individual gate electrode pattern. to form a CMOS-type transistor.

Claims (9)

1. The process of creating a moss transistor consists of one step. It forms a silicon gate electrode on the The gate oxide film formed on the silicon substrate, the second step is to add the dopant to the said silicon substrate. Ago, using the aforementioned gate electrode form as a mask Follow up with impulse impurity That has been added to the foregoing To form a diffusion in the surface layer of the substrate That is silicon as mentioned above The third step is film formation. Insulation In such a way that it is closed Cover the above gate electrode form. The fourth step eliminates the top part of the last step insulating film. Come out to reveal the top part of the image of the gate electrode mentioned above The fifth step is to eliminate the exposure of the said gate electrode pattern. And the sixth step is to embed metal material into the deep recess formed by removing the Exposing the pattern of the aforementioned electrodes by etching the etch. 2. The process of making a mos transistor consists of Step one Formative Of the gate electrode on the gate o-site film formed on the body, the base of the silicon The form of the above-mentioned electrode formed Figure by stacking silicon substances Materials which have the ratio of choice for etching to silicon and silicon in this order. From the side of the oxide film of the aforementioned gate; The second step is to add the dopant into the base body of silicon. As mentioned above, by using the above-mentioned electrode form as a mask, follow by Urging impurities that Was added to it To form a layer of diffusion in the body's surface layer The base of the silicon. The third step is film formation. Insulation In such a way as to cover The above gate electrode form The fourth step is to eliminate the top part of the insulating film for the barrier layer. Out to reveal the top part of the model of the aforementioned gate electrodes The fifth step is to remove silicon, which forms the upper layer of the polar form. The aforementioned electric nets that were made revealed by a selective extraction of engravings. The sixth step is the impurity impurity into the silicon substance of the bottom layer of the Model of the above-mentioned electrode. Followed by pushing the doped impurity, and the seventh step implants the metallic material in the deep recess formed by the Eliminate the silicon of the top layer of the aforementioned model electrode by etching, while the process is additionally assembled. During the fifth step mentioned above and The seventh step mentioned above. With the process of disposal of pre-stocked material with the ratio of selection For attaching silicon substances Of such electrode pattern removed by etching the latch 3. The process of constructing a moss-type transistor according to claim No. 2, while the process is additionally assembled. Between the five steps mentioned above and the Six of the foregoing With the process of milling the main plate An insulating film for separating the above layers on the aforementioned diffusion layer to form a second deep concave connected to the diffusion layer. The foregoing The sixth step consists of the process of adding contaminants into the The silicon substrate of the aforementioned gate electrode form. And at the same time Add the dopant into the aforementioned diffusion step through the second deep recess. As mentioned above, the seventh part consists of the process of embedding metallic material into a recessed part. Such depths formed by Eliminate the silicon of the top layer of the aforementioned gate electrode model. Come and leave by etching And at the same time, metal materials are embedded in the deep concave parts The second, mentioned above, is connected to the aforementioned diffusion layer. 4. The process of constructing a mos transistor according to claim 1, is also supplemented. Between the aforementioned fifth step and the sixth step with the process of adulteration into the surface of the aforementioned silicon base sequence, 5. The process of constructing a moss transistor according to claim 2 is also supplemented, between the fifth step mentioned and the seventh step above, with the process of impregnating the substance into the layer. The surface of the body, the base of the silicon substance mentioned above. 6. The process of building a motorized transistor, consists of one step forming the pemos and emos regions on the base body. Of silicon substances And forming an oxide film of the gate on the surface layer of the base body. Of the aforementioned silicon compounds in the pemos and nmos regions, each of them is a Of a silicon electrode on top The aforementioned gate oxide film formed on the base body of the said silicon. Arrived in each such area The third step is to cover the enema area mentioned above. With barrier layer and do The impurity of a type-P dopant into the base body of such silicon compounds in the aforementioned pemos area is by using the aforementioned barrier layer with the aforementioned gate electrode pattern as a mask. The pemoside was covered with a barrier layer and doped as a n-type into the body. Using the said barrier layer The above gate electrode forms are masked, and the impurity impregnated by this method forms a diffusion layer in the surface layer of the base of the body. In the fourth step, the silicon compounds in the nmos and pemos region form an insulating film for the barrier layer. In such a way as to cover The pattern of the aforementioned gate electrodes in the aforementioned Enmos and Pemos regions. The fifth step is to get rid of the top of the Insulating film for blocking such layers Out to reveal the top portion of each of the aforementioned gate electrode patterns. The sixth step is the elimination of the exposed part of the aforementioned gate electrode layout. Each pattern is extracted by a selective extraction of the engravings, and the seventh step embeds the metal material in the deep recess formed by removal. The exposed parts of each of the above-mentioned electrode patterns are removed by etching. 7. The process of making a semiconductor transistor, consisting of the first step forming the pemos region and the nmos region on the silicon base. And forming an oxide film of the gate on the surface of the body The base of the aforementioned Wilicon in each of the aforementioned areas The second step is construction. Of the electrode Nate On an oxide film Of the aforementioned gates formed on the body of the aforementioned silicon bases in each of the aforementioned sites Such gate electrodes are formed by stacking the material. Silicon without additives Materials which have the ratio of choice for etching to silicon. And silicine in this order from the oxide film side of the gate mentioned above. The third step is to cover the area with a barrier layer and add a p-type dopant into the body. The base of the silicon compound in the pemos region. Using the aforementioned barrier layer and the oxide form of the aforementioned gate as a mask, the pemoside area is covered with a barrier layer and doped with a tendon-type dopant into the body. The base of the silicon substance in the area of the said moss Using the said barrier layer Comes with the form of the aforementioned gate electrodes as a mask. In this way, the impurity was added to form a diffusion layer on the base surface of the body. The silicon substances in the enmos and pemos region respectively. The fourth step is to form a protective film. In such a way as to cover Electrode form The aforementioned gates in the area of the aforementioned En Moss and Pemos The fifth step is to remove the top portion of the barrier film to reveal the top portion of each of the aforementioned gate electrode patterns. The sixth step is the removal of the silicon substance of the top layer of the gate electrode form. The foregoing So it was revealed. The seventh step is a kind of contamination. - P enters the silicone substance of The bottom layer of the aforementioned gate electrode pattern in the pemos region is impregnated with a n-type dopant into the silicon of the bottom layer of the aforementioned gate electrode form. The eighth step is to bind the metal material into the deep recess formed by removal. The silicon of the top layer of each of the aforementioned gate electrode patterns is removed by etching, which is further assembled by the process. During the sixth episode mentioned And with the eighth step mentioned above With the process of material removal which has the ratio of selection For etching the aforementioned silicon inserts of each of the aforementioned gate electrode patterns. The figure is removed by etching. 8. The process of constructing a moss-type transistor according to claim No. 6 is additionally assembled. Between the sixth step mentioned above and the seventh step above, with the P-type additive additive stage. Into the surface layer Of the base body of the aforementioned silicon in the pemos region And dubbing - Ligament into the floor The surface of the body, the base portion of the silicon substance mentioned above, in the area of the enmos. 9. The process of constructing a mos transistor according to claim number 7 is additionally assembled. Between the sixth step mentioned above and the eighth step above with the type contamination stage. - P. into the surface of the body, the base of the silicon substance Already mentioned in the pemos area And the n-type dopant was added to the substrate layer of the silicon base part of the above-mentioned silicon in the en-moss region.