SU810086A3 - Устройство дл получени полупроводниковогоМАТЕРиАлА - Google Patents
Устройство дл получени полупроводниковогоМАТЕРиАлА Download PDFInfo
- Publication number
- SU810086A3 SU810086A3 SU2667252A SU2667252A SU810086A3 SU 810086 A3 SU810086 A3 SU 810086A3 SU 2667252 A SU2667252 A SU 2667252A SU 2667252 A SU2667252 A SU 2667252A SU 810086 A3 SU810086 A3 SU 810086A3
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- tube
- reaction
- quartz
- temperature
- bell
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 11
- 239000010453 quartz Substances 0.000 claims abstract 9
- 239000000463 material Substances 0.000 claims abstract 8
- 229910000831 Steel Inorganic materials 0.000 claims abstract 7
- 239000010959 steel Substances 0.000 claims abstract 7
- 239000012495 reaction gas Substances 0.000 claims abstract 5
- 239000007789 gas Substances 0.000 claims 8
- 238000005137 deposition process Methods 0.000 claims 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 4
- 239000000969 carrier Substances 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 4
- 230000008021 deposition Effects 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims 2
- 229910002091 carbon monoxide Inorganic materials 0.000 claims 2
- 239000000919 ceramic Substances 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 239000010795 gaseous waste Substances 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 238000001556 precipitation Methods 0.000 claims 2
- 239000000047 product Substances 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 2
- 235000008733 Citrus aurantifolia Nutrition 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229910004028 SiCU Inorganic materials 0.000 claims 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 239000004809 Teflon Substances 0.000 claims 1
- 229920006362 Teflon® Polymers 0.000 claims 1
- 235000011941 Tilia x europaea Nutrition 0.000 claims 1
- 229910001315 Tool steel Inorganic materials 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000009529 body temperature measurement Methods 0.000 claims 1
- 239000006227 byproduct Substances 0.000 claims 1
- 239000012159 carrier gas Substances 0.000 claims 1
- 238000007599 discharging Methods 0.000 claims 1
- 230000005672 electromagnetic field Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 claims 1
- 238000009434 installation Methods 0.000 claims 1
- 239000013067 intermediate product Substances 0.000 claims 1
- 239000004571 lime Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000003921 oil Substances 0.000 claims 1
- 230000035515 penetration Effects 0.000 claims 1
- 239000011505 plaster Substances 0.000 claims 1
- 239000002244 precipitate Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 229910000077 silane Inorganic materials 0.000 claims 1
- 150000004756 silanes Chemical class 0.000 claims 1
- 150000003377 silicon compounds Chemical class 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000005494 condensation Effects 0.000 abstract 1
- 238000009833 condensation Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19772743950 DE2743950A1 (de) | 1977-09-29 | 1977-09-29 | Verfahren und vorrichtung zum abscheiden von halbleitermaterial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU810086A3 true SU810086A3 (ru) | 1981-02-28 |
Family
ID=6020264
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU2667252A SU810086A3 (ru) | 1977-09-29 | 1978-09-29 | Устройство дл получени полупроводниковогоМАТЕРиАлА |
Country Status (7)
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3107421C2 (de) * | 1981-02-27 | 1985-02-14 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Glocke aus Quarzgut für die Abscheidung von Poly-Silizium |
| JPH0239525A (ja) * | 1988-07-29 | 1990-02-08 | Hitachi Ltd | 半導体熱処理装置 |
| US8613358B2 (en) | 2010-03-18 | 2013-12-24 | Jong Soo Park | Structure for detachable coupling of containers |
| US9656782B2 (en) | 2010-03-18 | 2017-05-23 | Jong Soo Park | Structure for detachable coupling of containers |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1221612B (de) * | 1962-09-15 | 1966-07-28 | Siemens Ag | Vorrichtung zum Konstanthalten der Temperatur eines bei einer pyrolitischen Zersetzung einer Halbleiterverbindung benutzten Traegers |
| GB1209580A (en) * | 1969-03-17 | 1970-10-21 | Hamco Mach & Elect Co | Automatic control for crystal growing apparatus |
| DE2518853C3 (de) * | 1975-04-28 | 1979-03-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas |
-
1977
- 1977-09-29 DE DE19772743950 patent/DE2743950A1/de active Granted
-
1978
- 1978-08-31 IN IN958/CAL/78A patent/IN149401B/en unknown
- 1978-09-21 PL PL1978209746A patent/PL115365B1/pl unknown
- 1978-09-28 BR BR7806432A patent/BR7806432A/pt unknown
- 1978-09-28 JP JP11986878A patent/JPS5458350A/ja active Granted
- 1978-09-28 IT IT28167/78A patent/IT1099206B/it active
- 1978-09-29 SU SU2667252A patent/SU810086A3/ru active
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5639048B2 (US07935154-20110503-C00006.png) | 1981-09-10 |
| IT7828167A0 (it) | 1978-09-28 |
| DE2743950A1 (de) | 1979-04-12 |
| PL209746A1 (pl) | 1979-06-04 |
| IN149401B (US07935154-20110503-C00006.png) | 1981-11-28 |
| BR7806432A (pt) | 1979-05-08 |
| DE2743950C2 (US07935154-20110503-C00006.png) | 1987-02-12 |
| IT1099206B (it) | 1985-09-18 |
| PL115365B1 (en) | 1981-03-31 |
| JPS5458350A (en) | 1979-05-11 |
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