SU803637A1 - Method of determining microparticle concentration in photoresists - Google Patents

Description

one

The invention relates to semiconductor technology and can be used to control the quality of photoresistive materials used for the production of semi-conductive devices.

It is known to monitor the degree of purification of photo-eeists, based on nanoscii on the oxidized silicon substrate of photoresist, to carry out the process of photolithography of HpiH, excluding exposure ocherirovaniya, placing the backing in a photoelectric contact upwards, overlaying the photographic paper with the liquid backed up with the water, and applying a photodisc, soaked with water, and putting a photo on it, moistened with a distilled surface, and using a photodisc, moistened with distilled water, and using a photodisc layer, moistened with a distillation pad. .a; en vrslui.i, about the appearance of photographic paper, fixing, washing, drying 1.

In this method, count the number of prints of punctures in the layer of photoresist.

The disadvantages of this method are low accuracy () as well as low express speed.

There is also known a method for determining the concentration of microparticles in photoresists, based on the illumination of a cuvette with a photoresist by collimated radiation and measuring the flux of radiation, it is passed through the cuvette with a photoresist 2.

The disadvantage of this method is low expressivity, since measurements need to be taken at 25-30 points with subsequent processing of the data on a computer, which will take 15-20 minutes.

The purpose of the 1 inventive is to elevate

accuracy and ekstressnosti.

The goal is achieved by the fact that in the well-known method of determining the concentration of M: nclusters in photoresists, based on the illumination of the cell with photoresist

The radiation flux, scattered in the 4 + 0 direction, from the axis of the forward through flow in solid state is determined by collimated radiation from the radiation flux measured through the cell with the photoresist, and determined from the axis of the forward through flow in solid state concentration of microparticles. The drawing shows a graduation diagram of the dependence of the ratio of the fluxes of radiation scattered in the 4 ° direction in a solid angle Aso 0.015 steradian n f f (Y)

depending on the concentration of microparticles in the Lo photoresist.

The choice of the direction of observation of scattered radiation in the range of 4 + 0.5 ° and in solid angle, 015 + 0.005 steradians, is due to the fact that for n, 0075 steradians are not traced to the correl

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Ratios (.; V) For -y 3 ° II Aio 0,0075 steradian-gt - 0.4, t. s. Significantly higher. Example. Photoresists р ;; - chl; 14111) 1l of marks put them up and. The thickness of the layer. T) ;. i toreznsta in a 1 cm cuvette. OciseiHaiOi forgo; : lg-zb l laser with full length. 632.8 nm and ras: one bridge, k) –2, measure the flux nr m () 1;) O1Psd111sg (; 4cpe: i photoresist irradiated / (0) and scattered F {y) J3 .le 0.015 radnap. On the basis of the note / / (y) / iF (0) nz gradunr yuchnogo 1rafnk; 1 oi) make south the concentration of lacTjui, in photorelease. When constructing the | P dunr | C; 1) P1 () graph of the value of a connection, which is determined, but well known. To do this, I measured my swept 1 th through (b the flow F (Q) and the brightness of the diff: 1 h: 1 and the luchellas P (Y) at 25–30 equal points in the range 0.5–6.5, then the calculated one. 1 aa The computer is a function of the distribution of parts in sizes / (g) but algo) nt.1U V 3,4 / |) s (y} 7:: (Y) X (Y) -. ,,, (c. Y) -2. -1) y1 (p, y) ;, (| Y Zdeei l - d.tina g.toyy) indicator of failure of the crisis; /. 0.6328 microns; ti - 1.139; -y and., scattered in fojureziete and g vetveveino, 1, and Yj - - ffchiii yyes Peymaia iervo1-o order. Koititrani Chayatin; 1ds.- | l; eooTHOHieinui:

The values of 7 (0), / (y) and jVo, but the null values proposed by ciiocoGo-T and according to the algorithm (1) - - (2), and the following: i () iu HiHOeth) 1Е1 Kochdent;) yes shaped fs / gorzy; 1рн1; ёd l and Tablns 1 lorpeiHiioci ONRED (xc) unregularly limited by one method “5. Psn () l / units; agas:: ii) (ii) 3) iOJiiri VKciijiecciio oire.de.that the micropartial and photoresist conditio, iri this 1) imein1) 1e costs are reduced 3-4 times by cjiaiii-icjiino e prototype and make up 3-5 missions. Syoosob nl; stsi 11) remaining with the tip of the eye, te.I1Gcheeko) 1 rea tisance) can be done in the factory for control of xaaccTiui photoframe / eziet, and with /; .ti M 1cloklektroinkn. FORUMAULA AND 3 ABOUT AND SLYUSO (; 11REELE1P1 K () his1GGRAN, mikrochayatin in photoreceivers, based on the OS ;; eiIennnn Kyu15e: a photoresist with co-opted radiation :, and from .; e ktp1i stream of 1subject, igliednogo che1) S; 3 cuvette} e photoresistive, o t; i n ay Hi, and ii with -IXXM, that, with de. notes to; 1, distributed in the direction of 4 0,5 ol axis np; most important HOT (jKa in Ie.ieeiiOM yr.ie 0,015; -0,005 1 iio from () And to C11u dissipate and lai-gh i: oo ov with : 1;) went to (k) T koil (K) O; aetid. USL031 N TL; - - 06 1 -78. 5; | i-Hii; ;, ui с1П1-РН-7, н. 4.8. ; .And:; frI; K.; ii Kolmakov II. B. “Vyra) (.) In aacTinr iu).-Jii.HieiiiiSiM 1 idiqa) nea; ib: x gkhov /. 1131sti LP (l (, R, ser. S15ilmcha (|) (: p1 and the ocean,;. 3, L; 12, I) O7, e. 127.

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Claims (1)

FORMULA A method for determining the concentration of mnc30 particles in photoresists based on illumination of a cell collimated radiation using a photoresist and measuring the radiation flux passing through the photoresist cell, characterized in that, with the aim of increasing accuracy and expression, the radiation flux scattered in the 4 f0.5 direction is measured ^: from the axis of the forward flow in the solid angle of 0.015 l-0.005 steradian, and with respect to the scattered and Ιό ii r r р m ι ;; ι uch ;; 11 eT; ί i with l> floods determine the concentration of microparticles.