SU619954A1 - Device for recording information in file - Google Patents

Description

J

The device belongs to the field of instrument-making, and more co-ordinarily, to information recording devices in semi-permanent memory devices (PROM) with automatic rewriting.

Recording devices in the EPROM are known, which form one or a series of aiMt pulses applied to an element for its transfer to the opposite state.

The device is not very reliable

The closest to the invention in its technical essence is a device containing a NOT recording control circuit ypo & "the first input of which is connected to the information input of the device, the second input is connected to the accumulator output, the output is connected to the control input of the controlled generator, and An address selection circuit connected to the address input of the device, the output of which is connected to the input of the accumulator 21. A special feature of the device is that there are instantaneous

the values of voltage and pulse current depend on the active resistance.

The use of a known device for recording information in an EPROM on vitreous semiconductor materials does not ensure the constant amplitude of the voltage H of the current of the recording pulses, since the resistance of the memory element changes during the action of the recording pulse. This leads to insufficiently reliable recording of information and the need to feed the EPROM memory element on the stellate semiconductor c. Materials with a known increase in the number of write pulses.

Claims (2)

To increase the reliability and reduce the recording time, a current stabilizer, voltage stabilizer, first and second AND circuits and a NOT circuit are entered into the device, the first inputs of which are connected respectively to the write outputs of the unit and the zero controlled oscillator, the second input of the first AND circuit is connected to information the input of the device AND through the circuit is NOT with the second input of the second circuit AND, the outputs of the first n the second circuit AND, respectively, through the current stabilizer through the voltage regulator, is connected to the first and second inputs of the IL circuit And | the output of which is connected to the impulse input of the address selection circuit. The drawing shows a block diagram of the described device. Info aa P0SV information in the drive, where 1 is a generator, 2 is a diagram NOT, Control & The generator to be connected is connected to the first IC3 circuit and the second IC4 circuit. This circuitry is connected to the current stabilizer 5, respectively. In the voltage regulator 6. The outputs of the stabilizers are fed to the circuit OR 7. The output circuits OR are connected to the address selection circuit 8 . A bhema 9 1fln control entry level was introduced. The address selection lock is connected to the drive lOi Data input - 11, the address input - 12. The device works as follows. The controlled generator 1 at the output of the recording of a titanium forms a sequence of pulses of a certain duration in magnitude, at the output a zero-sequence of voltage pulses of a certain duration and amplitude, which are fed to the first inputs of the circuits 3 and 4, respectively, to the second inputs It is given accordingly to the following: Conversion: With the help of 2 NOT INFORMATION, given on the information input 11 of the unit. From the output of circuit 3 and the write pulses of the unit stabilized by the current with the current stabilizer 5, or from the output of the circuit 4 and the write zero pulses, stabilized by a voltage regulator, go to the first or second inputs of the circuit 7 OR, and then through the scheme 8 for the selection of a drive to drive Yu, the address of the fiaMfiTH element in which is specified on the device input address 12. When 1shformatshsh coincides. readout from storage 10 with information specified at input 11, control level control circuit 9 generates a signal that signals the operation of the controlled oscillator 1. .. Thus, recording information into a memory cell on vitreous semiconductor materials stabilizes current or impulse voltage the recording supplied to the memory cell allows maintaining the required value of the current or voltage of the recording pulse with a varying active resistance of the memory cell. This increases the reliability of recording information wm, and also makes it possible to reduce the number of write pulses when a cell is transferred to the opposite state, which improves the speed of the device. Formula of a device for recording information into a drive containing a recording level control scheme, the first input of which is connected to the information input of the device, the second input is connected to the output of the storage device, the output is connected to the control input of the controlled generator, and An address selection circuit connected to the address input of the device, the output of which is connected to the drive input, is due to the fact that, in order to increase reliability and reduce recording time, a current stabilizer and a voltage stabilizer are introduced into it , the first and second AND circuits and NOT circuits, the first inputs of which are connected ci responsibly to the unit write outputs and the zero of the controlled generator., the second input of the first AND circuit is connected to the information input of the device and through the NOT circuit to the second input of the second AND circuit , the outputs of the first and second circuits AND, respectively, through the current regulator and through the voltage regulator are connected to the first and second inputs of the circuit, the course of which is connected to the pulse address selection circuit. Sources of information taken into account in the examination: 1.Neel, Nelson and M.- Permanent memory with electrical overwriting of information when power is turned off. Journal of Electronics, USA, 1970,? 2O, s, 4--9. 2. Framen-Benskovsky. Semiconductor ROM with electrical overwriting. JournalElectronicsUSA, 1971.1 th, p. 44-50