SU531430A1 - SOURCE OF GALLIA FOR GAS-TRANSPORT EPITAXY OF ARSENIDE GALLIA - Google Patents

SOURCE OF GALLIA FOR GAS-TRANSPORT EPITAXY OF ARSENIDE GALLIA

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Publication number
SU531430A1
SU531430A1 SU2076946/25A SU2076946A SU531430A1 SU 531430 A1 SU531430 A1 SU 531430A1 SU 2076946/25 A SU2076946/25 A SU 2076946/25A SU 2076946 A SU2076946 A SU 2076946A SU 531430 A1 SU531430 A1 SU 531430A1
Authority
SU
USSR - Soviet Union
Prior art keywords
source
gallia
epitaxy
capillary
arsenide
Prior art date
Application number
SU2076946/25A
Other languages
Russian (ru)
Inventor
Ю.Г. Сидоров
Original Assignee
Институт Физики Полупроводников Со Ан Ссср
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Физики Полупроводников Со Ан Ссср filed Critical Институт Физики Полупроводников Со Ан Ссср
Priority to SU2076946/25A priority Critical patent/SU531430A1/en
Application granted granted Critical
Publication of SU531430A1 publication Critical patent/SU531430A1/en

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1. Источник галлия для газотранспортной эпитаксии арсенида галлия, представляющий собой кварцевую лодочку закрытого типа, отличающийся тем, что, с целью повышения стабильности работы и уменьшения времени насыщения источника, в отверстие источника опущен капилляр, имеющий на другом конце развитую поверхность контакта с газовой фазой.2. Источник по п.1, отличающийся тем, что капилляр образован близкорасположенными пластинами из материала, смачиваемого галлием, например вольфрама, имеющего отверстия в верхнем конце пластины.3. Источник по п.1, отличающийся тем, что капилляр образован спиралью, намотанной на пластину.1. A gallium source for gas transmission epitaxy of gallium arsenide, which is a quartz boat of a closed type, characterized in that, in order to increase stability and reduce the source saturation time, a capillary with a developed gas phase contact surface is lowered into the source hole. 2 The source according to claim 1, characterized in that the capillary is formed by closely spaced plates of material wetted with gallium, for example tungsten, having openings in the upper end of the plate. The source according to claim 1, characterized in that the capillary is formed by a spiral wound on a plate.

SU2076946/25A 1974-11-25 1974-11-25 SOURCE OF GALLIA FOR GAS-TRANSPORT EPITAXY OF ARSENIDE GALLIA SU531430A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU2076946/25A SU531430A1 (en) 1974-11-25 1974-11-25 SOURCE OF GALLIA FOR GAS-TRANSPORT EPITAXY OF ARSENIDE GALLIA

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU2076946/25A SU531430A1 (en) 1974-11-25 1974-11-25 SOURCE OF GALLIA FOR GAS-TRANSPORT EPITAXY OF ARSENIDE GALLIA

Publications (1)

Publication Number Publication Date
SU531430A1 true SU531430A1 (en) 2000-05-20

Family

ID=60520690

Family Applications (1)

Application Number Title Priority Date Filing Date
SU2076946/25A SU531430A1 (en) 1974-11-25 1974-11-25 SOURCE OF GALLIA FOR GAS-TRANSPORT EPITAXY OF ARSENIDE GALLIA

Country Status (1)

Country Link
SU (1) SU531430A1 (en)

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