SU530486A1 - The method of dimensional etching of copper - Google Patents
The method of dimensional etching of copperInfo
- Publication number
- SU530486A1 SU530486A1 SU1986974A SU1986974A SU530486A1 SU 530486 A1 SU530486 A1 SU 530486A1 SU 1986974 A SU1986974 A SU 1986974A SU 1986974 A SU1986974 A SU 1986974A SU 530486 A1 SU530486 A1 SU 530486A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- copper
- aqueous solution
- dimensional etching
- potassium iodide
- etching
- Prior art date
Links
Landscapes
- ing And Chemical Polishing (AREA)
Description
(54) СПОСОБ РАЗМЕРНОГО ТРАВЛЕНИЯ МЕДИ(54) METHOD OF DIMENSIONAL POISONING OF COPPER
отношение), после чего йодистую медь удал ют 10%-ным раствором аммиака в виде растворимого иодно-аммиачного комплекса ECu(NHj)lD , не затрагива меди, наход щейс под слоем (Ьоторезиста,ratio), after which copper iodide is removed with a 10% ammonia solution in the form of a soluble ammonium iodine complex ECu (NHj) lD, without affecting the copper, which is under the layer (
Такое решение поставленной задачи позвол ет получить отклонение размеров элементов (линий, диаметров отверстий и т.д.) на меди, полученных после травлени , не более, чем на 1 мкм на сторону по сравнению с размером, заданным на фотошаблоне.Such a solution of the problem posed allows one to obtain a deviation in the size of elements (lines, hole diameters, etc.) on copper, obtained after etching, by no more than 1 µm per side compared to the size specified on the photomask.
Пример. Подложка из полупроводника или изолирующего материала (ситалла, поликора) или другого материала, обработан .на по 13-14 классам чистоты ГОСТа последовательно обезжириваетс в растворител х типа четыреххлористого углерода, толуола , спирта, после чего покрываетс слоем стандартного фоторезиста на центрифуге толщиной 0,6-0,7 мкм, экспонируетс и про вл етс в 0,5 н. растворе КОН, сушитс при 85°С в течение 20 мин, задубливаетс при 125°С в течение 30 мин, после чего погружаетс в состав на основе З КЗ-Н О 1:4:20 (весовое соотношение). Образующийс в открытых участках белый налет йодистой меди удал етс затем в 10%-ном растворе аммиака. При этом образуетс иодноаммичный комплекс.Example. The substrate of semiconductor or insulating material (sitall, policor) or other material is processed in 13-14 grades of GOST cleanliness and subsequently degreased in solvents such as carbon tetrachloride, toluene, alcohol, and then coated with a layer of standard 0.6 thick. -0.7 µm, exhibited and developed in 0.5N. the KOH solution, dried at 85 ° C for 20 minutes, hardened at 125 ° C for 30 minutes, after which it is immersed in a composition based on 3 KZ-H O 1: 4: 20 (weight ratio). The white bloom of copper iodide formed in the open areas is then removed in a 10% ammonia solution. In this case, the one-ammus complex is formed.
При травлении меди дл получени линий с исходными размером 6 и 5О мкм получают размеры 4,О; 4,1; 4,3; 1,4:, 25 ... иBy etching copper, to obtain lines with an initial size of 6 and 5 µm, sizes 4, O are obtained; 4.1; 4.3; 1.4: 25 ... and
48,3; 48,15; 48,2;. 48,0; 48,2 ... мкм соответственно .48.3; 48.15; 48.2; 48.0; 48.2 ... μm, respectively.
При использовании обычных травителей дл меди эти участки оказались полностью стравленными.When using conventional etchants for copper, these areas turned out to be completely etched.
С использованием обычных травителей, например, на основе хлорного железа, получают размеры 36,7; 38,2; 37,7; 37,0... мкм.Using conventional etchants, for example, based on ferric chloride, sizes of 36.7 are obtained; 38.2; 37.7; 37.0 ... μm.
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Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1986974A SU530486A1 (en) | 1974-01-11 | 1974-01-11 | The method of dimensional etching of copper |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1986974A SU530486A1 (en) | 1974-01-11 | 1974-01-11 | The method of dimensional etching of copper |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU530486A1 true SU530486A1 (en) | 1976-09-30 |
Family
ID=20572917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU1986974A SU530486A1 (en) | 1974-01-11 | 1974-01-11 | The method of dimensional etching of copper |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU530486A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4416725A (en) * | 1982-12-30 | 1983-11-22 | International Business Machines Corporation | Copper texturing process |
-
1974
- 1974-01-11 SU SU1986974A patent/SU530486A1/en active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4416725A (en) * | 1982-12-30 | 1983-11-22 | International Business Machines Corporation | Copper texturing process |
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