SU527743A1 - Memory matrix - Google Patents

Description

STORAGE MATRIX

The invention relates to the field of computing and can be used in the manufacture of discrete information storage devices.

Memory arrays are known that contain intersecting numerical and bit buses separated by an insulating layer 1, 2.

One of the known storage matrices contains numerical and bit buses separated by an insulating layer and covered by m; -nitone 1. The disadvantage of this matrix is small output signals.

The closest technical solution to this invention is a storage matrix that contains numerical and bit buses separated by a first insulating layer and covered by a second insulating layer and a layer of magnetically soft material located on top of the second insulating layer 2. However, in such a matrix information cannot be changed due to a rigidly defined configuration of memory elements at the stage of manufacturing photomasks for numerical tires.

The aim of the invention is to expand the field of application of the storage matrix.

The goal is achieved by storing the memory matrix containing numeric and bit buses separated by the first insulating layer and covered by the second insulating material, and a layer of magnetically soft material located on top of the second insulating layer contains a third insulating layer located at the top .ch layer of magnetically soft material and covered by a layer of magnetically hard material.

FIG. Figure 1 shows the layout of the numerical and bit iiMH storage matrix; in fig. 2 is a section along A-A in FIG. one; in fig. 3 is a temporary diagram of the operation of the memory elements of the matrix.

Matrix 1 contains numeric 2 and bit 3 tires, separated by the first insulating layer 4 and covered by the second insulating layer 5. The layer of magnetically soft material 6 is located on top of the second insulating layer 5, and the treadmill ™ and junction layer 7 are on top of layer 6 and a layer of magnetically hard material 8 covered. C: yu 7 serves to prevent the magnet and magnet from averaging the characteristics of the layer. (; srdogo materials as a result of exchange interaction .... interaction between them.

The parameters of the magnetic layers are chosen so that when the layer 8 is magnetized by an external field directed along the sections of the AV-DS memory elements EF-NM, the demagnetizing field of this layer is greater than the saturation field of the magnetically soft material and the magnetic flux of the layer 8 completely closes through layer 6 .

The matrix works as follows.

Information recording is achieved with the help of a block magnetizing the elements of the matrix memory in accordance with a given code and executed as a separate device, for example, a block of magnetic heads. When recording zeros under the action of a field created by a block of magnetic heads, layer 8 is magnetized along sections of the memory elements AV-DS, EF-NM. In this case, the magnetic flux of the layer is closed through layer 6. When the unit is written, the layer 8 is demagnetized by the action of the field created by the magnetic heads block, the external field of this layer disappears, and layer 6 leaves the saturated state (Fig. 1 and 2).

When information is read on the selected numeric bus, a current pulse is sent to the reader. In this case, in the memory elements, which are in the state of unity, the layer 6 is magnetized, since it is removed from saturation. As a result, emf is induced in bit tires. units. In the memory elements that are in the B state of zero, layer 6 does not reversal.

since it is in saturation under the action of the field of a hard magnetic material, which significantly exceeds the active field created by the current Jc4. As a result, there is no signal in the bit buses (Fig. 3).

The introduction of additional layers of insulating and magnetically hard materials allows information to be changed under the influence of external fields, which will expand the field of application of the matrices.

Claims (2)

1. Brik E. A. Te; h1shka permanent storage devices. Publishing house Sovetskoye radio, 1973, p. 63. 2. Bardizh V.V. Magnetic Elements of a Digital Computer. Publishing house Energia 1974, p. 441. Sch5 BUT / Zhjy $ And fi. 1 D C f g S2 N M eo L- / 1 l / . J