SU519102A1 - Integrated inverter - Google Patents

Description

The present invention relates to the field of integrated semiconductor circuits and can be widely used in integrated circuits with a high degree of integration of elements on a chip.

Integrated circuits with injected power supply are known, containing load and switching transistor structures II.

The closest in technical essence is an integral injection piping inverter containing a horizontal load transistor of the same conductivity type and a switching vertical transistor of the opposite conductivity type. The emitter and base regions of the vertical transistor are respectively the base and collector regions of the horizontal transistor 2.

The well-known integrated inverter has low speed, due to the deep saturation of the vertical switching transistor during operation.

The aim of the invention is to increase the speed of an integrated injection-type inverter.

This goal is achieved by the implementation of a switching transistor in the form of a field structure with a gate in the form of a pn-junction, which is combined with a collector p-junction of the load transistor, and the source region, combined with the base region of the same transistor. The drain region of the switching transistor is made in the form of a metal electrode with a rectifying contact and a gate region.

FIG. 1 shows (schematically) the proposed injection type integral inverter, plan view; FIG. 2 - section A-A of FIG. one; FIG. 3 - a variant of the proposed inverter, plan view; FIG. 4- section BB of fig. 3

An integrated injection-type inverter (Fig. 1) contains a horizontal transistor in the power supply circuit, for example, pnp-type with areas 1-3, respectively emitter, base and collector; a switching transistor in the form of a field structure with a source area 2, a gate 3 and a drain 4; contact metal electrodes 5, 6, and 7, which have ohmic nonresistant contacts with regions I, 3, and 4; conductive channel 8 of ge-type conductivity of a field structure with a p- / z-junction. Conductive channel 8 connects source 2 and drain 4 areas of a switching transistor. The type of channel conduction and (“-type) is opposite to the type of conduction

gate area 3 switching transistor.

An integrated injection type inverter (Fig. 2) contains a horizontal transistor in a power supply circuit, eg, pn-type with emitter region 9, base 10 and collector //; a switching vertical transistor with a source region 10, a gate 11 and a drain region in the form of a metal electrode 12, forming a rectifying Schottky-type junction with a gate region // of the switching transistor; contact metal electrodes 13 and 14, having ohmic non-contacting contacts with regions 9 and 11; conductive channel 15 jO-type conductivity, connecting the source 10 and drain (made in the form of a metal electrode 12) the area of the switching transistor. Conductive channel 15 is located in the gate region 11 of the switching transistor and is opposite to it in conduction type. The drain region of the switching transistor (metal electrode 12) and the 15/7-type channel have an ohmic non-contact contact at the point of contact (for example, with aluminum electrode 12 and a semiconductor structure on silicon).

The proposed integrated inverter (Fig. 1) works as follows.

The emitter region / horizontal pn-transistor (Fig. 1) is connected to the positive pole of the power supply source, the base region 2 is grounded. The negative pole of the power supply source is also grounded. Electrode 6 (inverter input) is connected to an input source, electrode 7 (inverter output) is connected to a load circuit. Let logical O denote the closure condition of the electrode to the ground (low positive potential O-0.1 V), logical 7 denote the absence of the closure of this electrode to the earth (high positive potential equal to the direct voltage drop across rl - junction, i.e. 0.5-0.7 V for a silicon device).

When a logical O signal is applied to the electrode 6 (device input) on the gate region 3 of a vertical switching transistor, a low positive potential of O-0.1 V, the potential of the grounded source region 2 is zero, the current through the rl-junction gate region 3 is the source region 2 there is no switching transistor, the switching transistor is locked, the conductive channel 8 between its source and drain areas is closed by the gate area 3 - channel 8, which is at zero or insignificant (up to 0.1 V) p IOM displacement. At electrode 7 (device output), the state is logical 1 (high positive potential, lack of earth fault).

When a logical / signal is applied to electrode 6 (device output), the holes coming from area / to area 3 do not drain from area 3 through electrode 6, but increase the potential of area 3. At the same time, the p – l junction between area 5 and channel 8 occurs at a significant (0.6-0.7 V) forward bias. The volume gap of the p - “- junction, which overlaps the channel 8, narrows, drops 8 is opened and closes between the source area of the switching transistor (whose potential is equal to zero) and its drain region 4. At the same time, in the drain region 4 and electrode 7 (output of the device) - “low potential (short to earth), i.e. state of logical 0.

A significant advantage of the proposed integrated inverter is that its speed is not limited by the absorption time of minority carriers in the base area of the switching pnp transistor, which is in a state of deep saturation during the operation of the inverter.

The integrated inverter of the injection type (Fig. 2) works in a similar way. Electrode 14 is the input electrode of the device, electrode 12 is its output electrode.

The advantage of this integrated inverter is a further increase in speed by decreasing the span of logic levels (logic O near O-0.1 V, logic 1, determined by the direct paviyevy voltage on the Shotka type rectifying junction between the electrode 12 and / switching transistor, about 0.3-0.4 V).

It is obvious that the proposed designs of integrated inverters can also be effectively used with known use (instead of the emitter regions of horizontal transistors in the power supply) of semiconductor volumes that generate free charge carriers under the action of light or other radiation. These structures are easily realized by the known planar technology of making bipolar integrated circuits, retain all the advantages of the prototype (a high degree of integration and low power consumption), and significantly exceed its speed. They can find wide applications in the construction of integrated circuits with a high density of components on the chip.

Claims (2)

1. An integrated injection-type inverter containing a load transistor and a switching vertical a transistor, characterized in that, in order to improve speed, the switching transistor is made in the form of a field structure with a gate in the form of a p - "- junction, which is combined with a collector p -" - junction of the load transistor, and a source region, combined with a base region of same transistor. 2. The inverter according to Claim 1, characterized in that the drain region of the switching traffic detector is made in the form of a metal electrode with a rectifying contact to the gate region. Sources of information taken into account at the examination: 1.Patent of France No. 2.057.004, cl. H 01 L 7/00, 1971. 2.Patent of France No. 2088,388, cl. H 01 L 19/00, H 03 K 19/00, 1971. tU.Z.i if 12f, X, / 3 r Faa.2 P  H.L ffff J. i lin i - d J.g ff / p ten