SU587808A2 - Integrated-circuit - Google Patents

Description

(54) INTEGRAL SCHEME

The invention relates to injection-type logic integrated circuits and can be applied in the manufacture of large integrated circuits with high density of components on the chip. The cxevia integral types of injection type are known; they contain horizontal and vertical transistors of an additional type of conductor G1. H closer to the proposed integrated circuit is the injection type integrated circuit according to the main author. St. USSR 571155 with horizontal and vertical transistors of additional conductivity type and additional injecting regions, equipped with ohmic contacts and located between the horizontal emitter and the base of vertical transistors. The disadvantage of this integrated circuit is its limited functionality due to the use of each additional injecting region as only one logical input and the difficulties that arise when combining the inputs of several circuits of the strong influence of the scatter of the input characteristics (scatter parameters p-n junctions between regions of additional injected and the substrate) to the work circuits. The purpose of the invention is to expand the functionality of the integrated circuit, i.e. increasing the number of its independent logical inputs (with the same number of additional injecting areas) and ensuring the possibility of direct integration of the circuits by inputs. This goal is achieved by locating the diode structures in additional injecting areas of the integrated circuit. The schematic drawing shows the proposed multi-input logical integration scheme. . The integrated circuit is placed on a silicon substrate, for example, p-type conductivity, and contains a horizontal current signaling pn-transistor with a base region 1, an emitter region 2 and a collector region 3; vertical switching pnp transistor with an emitter region 1, the base region 3, the collector region 4 and the contact

electrode b, which is the output electrode of the circuit; Additional areas of b-type conductivity, injected between regions 2 and -3 and having diode structures (Schottky diodes), whose anodes are input (for example, silicon), electrodes 7, cathodes - regions 6. The periphery of 6 Improvements in their injecting properties can be more doped than areas where diode structures are located, for example doped in a single diffusion process with region 2. Diode structures formed by electrodes 7 and regions b are characterized by a small (compared to Exits) direct voltage drop.

The proposed integrated circuit operates as follows.

Areas 1 and 2 are connected via contact electrodes to a common bus and a negative pole of the power source (current), respectively. The input electrodes 7 are connected to the signal source, the output electrode to the load. The same integral circuits, conventional injection circuits, etc. can be used as sources of signals and loads. The operation of the described integrated circuit is to a large extent similar to the operation of the integrated circuit of the prototype, but differs in that the diode structures with a small direct voltage drop, located within the additional injecting regions b; in contact with this area, diode logical assemblies form and implement (in addition to the common logical capabilities of the circuit with the prototype) within each of the areas a logical function AND

(the OR function with the opposite way of encoding logical connections

that The same diode structure

6

ensure the independence of all logic inputs of integrated circuits and the possibility of their direct integration, since within each region b the electrode 7 turns out to be separated by two counter-connected diode structures with one-sided conductivity.

The advantages of the proposed integrated logic circuit over the prototype circuit are a significant expansion of its functionality, an increase in the number of independent logic inputs, the possibility of directly linking circuits by inputs, an increase in speed by reducing the logic levels in additional injecting areas and reducing the same number of inputs, as well as an increase in load capacity, obulovlennoe large gain vertical Nogo Swap - Tel'nykh transistor imekntsego not contact the electrode to the base region.

The proposed integrated circuit may find application in large integrated circuits of calculators, microprocesses, and other logic devices.

Claims (2)

1. The patent of France 2088338, cl. H 01 L 19/00, H 03 K 19/00, published. 1971. 2. USSR author's certificate number 571155, cl. M 01 L 27/00, 1974. L