SU326915A1 - - Google Patents
Info
- Publication number
- SU326915A1 SU326915A1 SU1430888A SU1430888A SU326915A1 SU 326915 A1 SU326915 A1 SU 326915A1 SU 1430888 A SU1430888 A SU 1430888A SU 1430888 A SU1430888 A SU 1430888A SU 326915 A1 SU326915 A1 SU 326915A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- diffusion
- diffusant
- polished
- structures
- sources
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- UOZODPSAJZTQNH-UHFFFAOYSA-N Paromomycin II Natural products NC1C(O)C(O)C(CN)OC1OC1C(O)C(OC2C(C(N)CC(N)C2O)OC2C(C(O)C(O)C(CO)O2)N)OC1CO UOZODPSAJZTQNH-UHFFFAOYSA-N 0.000 description 1
- 241000700647 Variola virus Species 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- ALEXXDVDDISNDU-JZYPGELDSA-N cortisol 21-acetate Chemical compound C1CC2=CC(=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@@](C(=O)COC(=O)C)(O)[C@@]1(C)C[C@@H]2O ALEXXDVDDISNDU-JZYPGELDSA-N 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1430888A SU326915A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-04-06 | 1970-04-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU1430888A SU326915A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-04-06 | 1970-04-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU326915A1 true SU326915A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-06-15 |
Family
ID=20452214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU1430888A SU326915A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1970-04-06 | 1970-04-06 |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU326915A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2435817A1 (fr) * | 1978-09-05 | 1980-04-04 | Gen Electric | Procede pour faire diffuser de l'aluminium dans une pastille de semi-conducteur |
-
1970
- 1970-04-06 SU SU1430888A patent/SU326915A1/ru active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2435817A1 (fr) * | 1978-09-05 | 1980-04-04 | Gen Electric | Procede pour faire diffuser de l'aluminium dans une pastille de semi-conducteur |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FR1547963A (fr) | Procédé de fabrication de cristaux filiformes de carbure de silicium et objets constitués au moins partiellement par ces cristaux | |
| GB1460758A (en) | Vapour-phase 0position | |
| SU326915A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| CH444832A (fr) | Procédé de fabrication du carbure de silicium en fines particules | |
| Jakob et al. | Monohydride structures on chemically prepared silicon surfaces | |
| BE816507A (fr) | Procede de fabrication de supports en silicium ou carbure de silicium pour processus de diffusion | |
| JPS5358490A (en) | Forming method for film | |
| US3790404A (en) | Continuous vapor processing apparatus and method | |
| ATE42429T1 (de) | Gedaempftes chemisches dampfniederschlagsverfahren glatter dotierter filme. | |
| JPS5272399A (en) | Method and apparatus for growth of single crystals of al2o3 from gas p hase | |
| FR1508431A (fr) | Procédé perfectionné pour revêtir de carbure de silicium des substrats carbonés | |
| JPS5324277A (en) | Semiconductor devic e and its production | |
| FR1515380A (fr) | Procédé et appareil pour la fabrication de rubans de carbure de silicium | |
| Klein et al. | Simultaneous diffusion of oppositely charged impurities in semiconductors | |
| FR2301093A1 (fr) | Methode de diffusion de regions isolantes dans un substrat semi-conducteur | |
| BE611575A (fr) | Procédé pour obtenir du silicium, du carbure de silicium et du germanium extrêmement purs | |
| JPS55121648A (en) | Cvd device | |
| GB1056720A (en) | Improved method of epitaxially vapour depositing semiconductor material | |
| FR1126109A (fr) | Procédé pour la production de couches métalliques sur la surface des semi-conducteurs, de préférence pour la production de couches de blocage pour redresseurs et transistors, et dispositions de semi-conducteurs conformes à celles obtenues par lesdits procédés | |
| JPS61128520A (ja) | 不純物拡散方法 | |
| US3232799A (en) | Method of determining the thickness of epitaxially deposited layers of material | |
| GB1258125A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| USRE28402E (en) | Method for controlling semiconductor surface potential | |
| DE2006994A1 (de) | Verfahren zum Dotieren eines Siliciumkristalls durch Eindiffundieren von Bor bzw. Phosphor aus einer auf der Siliciumoberfläche erzeugten, den Dotierungsstoff abgebenden oxydischen Schicht | |
| Wolfson et al. | The Observation of Lomer-Cottrell Dislocations in Boron-diffused (111) Silicon by Berg-Barrett Skew Reflections |