SU1827152A3 - Power bipolar transistor with overvoltage protection - Google Patents

Power bipolar transistor with overvoltage protection

Info

Publication number
SU1827152A3
SU1827152A3 SU4927444/25A SU4927444A SU1827152A3 SU 1827152 A3 SU1827152 A3 SU 1827152A3 SU 4927444/25 A SU4927444/25 A SU 4927444/25A SU 4927444 A SU4927444 A SU 4927444A SU 1827152 A3 SU1827152 A3 SU 1827152A3
Authority
SU
USSR - Soviet Union
Prior art keywords
avalanche diode
transistor
transistor structure
working
base
Prior art date
Application number
SU4927444/25A
Other languages
Russian (ru)
Inventor
В.В. Кондрашов
С.А. Мурзин
Original Assignee
Товарищество с ограниченной ответственностью "КМК"
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Товарищество с ограниченной ответственностью "КМК" filed Critical Товарищество с ограниченной ответственностью "КМК"
Priority to SU4927444/25A priority Critical patent/SU1827152A3/en
Application granted granted Critical
Publication of SU1827152A3 publication Critical patent/SU1827152A3/en

Links

Abstract

FIELD: manufacture of semiconductors. SUBSTANCE: power bipolar transistor with overvoltage protection has a working transistor structure and a protective avalanche diode in the form of a transistor with a "floating" base integrated with the mentioned working transistor structure in a single semiconductor substrate in such a way that they have a common collector, and the emitter region of the avalanche diode is resistive-coupled to the base region of the working transistor structure; the width and/or degree of doping of the active base of the protective avalanche diode are smaller than those of the active base of the transistor structure so that the breakdown voltage between the collector emitter of the mentioned avalanche diode is lower than that between the collector and emitter of the working transistor structural, with its base circuit being broken. The novelty in the transistor is the limitation of the degree of doping of the avalanche diode emitter region in such a way that the degree of doping of the mentioned emitter region of the protective avalanche diode (N) is lower than that of the emitter region of the working transistor structure (N), and N< 2•10at/cm. EFFECT: enhanced resistance to secondary break-down. 1 dwg
SU4927444/25A 1991-04-18 1991-04-18 Power bipolar transistor with overvoltage protection SU1827152A3 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU4927444/25A SU1827152A3 (en) 1991-04-18 1991-04-18 Power bipolar transistor with overvoltage protection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU4927444/25A SU1827152A3 (en) 1991-04-18 1991-04-18 Power bipolar transistor with overvoltage protection

Publications (1)

Publication Number Publication Date
SU1827152A3 true SU1827152A3 (en) 1996-06-27

Family

ID=60541128

Family Applications (1)

Application Number Title Priority Date Filing Date
SU4927444/25A SU1827152A3 (en) 1991-04-18 1991-04-18 Power bipolar transistor with overvoltage protection

Country Status (1)

Country Link
SU (1) SU1827152A3 (en)

Similar Documents

Publication Publication Date Title
CA1170784A (en) Protective semiconductor device utilizing back-to- back zener diodes
ATE180103T1 (en) FOUR LAYER SURGE PROTECTION DIODE
JPH0563949B2 (en)
KR100200352B1 (en) Protection device of semiconductor device
ES8206917A1 (en) Semiconductor device having a reduced surface field strength
TW200504994A (en) Turn-on efficient bipolar structure with deep n-well for on-chip ESD protection design
DE59914922D1 (en) POWER SEMICONDUCTOR COMPONENT
EP1130649A3 (en) Semiconductor integrated device with protection against ESD
GB1322933A (en) Semiconductor device
US4972247A (en) High energy event protection for semiconductor devices
Chen et al. Bipolar SCR ESD protection circuit for high speed submicron bipolar/BiCMOS circuits
SU1827152A3 (en) Power bipolar transistor with overvoltage protection
TW351851B (en) Semiconductor device
SU1827151A3 (en) Power bipolar transistor with overvoltage protection
SU1827146A3 (en) Power bipolar transistor with overvoltage protection
IT1245794B (en) VERY RELIABLE SEMICONDUCTOR DEVICE
SE9901483L (en) Surge
KR960043304A (en) Protection diodes protect semiconductor devices from destruction by static electricity
TWI265599B (en) ESD implant following spacer deposition
EP1124260A3 (en) Semiconductor device with reverse conducting faculty
Morishita New ESD protection circuits based on PNP triggering SCR for advanced CMOS device applications
EP1285465A1 (en) Bipolar transistor
JPS5580350A (en) Semiconductor integrated circuit
KR19980067430A (en) Static electricity protection device of semiconductor device
JPS6420651A (en) Semiconductor output buffer device