SU1825125A1 - METHOD OF CALIBRATION OF SEMICONDUCTOR SENSITIVE ELEMENT BASED ON METAL OXIDE, INTENDED FOR DETERMINING THE MICROPRIME CONCENTRATION IN THE ATMOSPHERE OF AN UNISMENDABLE COMPONENT - Google Patents

METHOD OF CALIBRATION OF SEMICONDUCTOR SENSITIVE ELEMENT BASED ON METAL OXIDE, INTENDED FOR DETERMINING THE MICROPRIME CONCENTRATION IN THE ATMOSPHERE OF AN UNISMENDABLE COMPONENT

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Publication number
SU1825125A1
SU1825125A1 SU4775665/25A SU4775665A SU1825125A1 SU 1825125 A1 SU1825125 A1 SU 1825125A1 SU 4775665/25 A SU4775665/25 A SU 4775665/25A SU 4775665 A SU4775665 A SU 4775665A SU 1825125 A1 SU1825125 A1 SU 1825125A1
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SU
USSR - Soviet Union
Prior art keywords
sensitive element
calibration
atmosphere
concentration
metal oxide
Prior art date
Application number
SU4775665/25A
Other languages
Russian (ru)
Inventor
С.А. Казаков
Э.Е. Гутман
И.А. Мясников
В.Н. Менжук
С.В. Руженцев
Original Assignee
Научно-исследовательский институт химического машиностроения и научно- исследовательский физико-химический институт им. Л.Я.Кариева
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Application filed by Научно-исследовательский институт химического машиностроения и научно- исследовательский физико-химический институт им. Л.Я.Кариева filed Critical Научно-исследовательский институт химического машиностроения и научно- исследовательский физико-химический институт им. Л.Я.Кариева
Priority to SU4775665/25A priority Critical patent/SU1825125A1/en
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Publication of SU1825125A1 publication Critical patent/SU1825125A1/en

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Abstract

Способ калибровки полупроводникового чувствительного элемента на основе оксида металла, предназначенного для определения концентрации микропримеси в атмосфере неизмеряемого компонента, заключающийся в подаче на чувствительный элемент эталонной газовой смеси с последующим измерением электрофизического параметра и определением калибровочных постоянных чувствительного элемента, отличающийся тем, что, с целью повышения точности определения калибровочных характеристик, находят стационарное значение электрофизического параметра чувствительного элемента в атмосфере газа с постоянной концентрацией микропримеси, после чего заменяют среду на калибровочную газовую смесь с другим содержанием микропримеси, затем подают ее на чувствительный элемент и измеряют изменение электрофизического параметра чувствительного элемента во времени до нового стационарного значения, а по характерному спаду величины электрофизического параметра чувствительного элемента находят постоянную времени переходного процесса изменения электрофизического параметра от исходного до вновь полученного, по величине которой определяют калибровочные постоянные чувствительного элемента.A method for calibrating a semiconductor sensitive element based on a metal oxide, designed to determine the concentration of trace contaminants in the atmosphere of an immeasurable component, consisting in feeding a standard gas mixture to a sensitive element followed by measuring the electrophysical parameter and determining the calibration constants of the sensitive element, characterized in determine the calibration characteristics, find the stationary value of the electrophysical parameter h element in the gas atmosphere with a constant concentration of microimpurities, then replace the medium with a calibration gas mixture with a different content of microimpurities, then feed it to the sensitive element and measure the change in the electrophysical parameter of the sensitive element over time to a new stationary value the sensitive element find the time constant of the transition process of the change in the electrophysical parameter from the initial to the Acquiring, the magnitude of which is determined calibration constants sensor element.

SU4775665/25A 1989-12-29 1989-12-29 METHOD OF CALIBRATION OF SEMICONDUCTOR SENSITIVE ELEMENT BASED ON METAL OXIDE, INTENDED FOR DETERMINING THE MICROPRIME CONCENTRATION IN THE ATMOSPHERE OF AN UNISMENDABLE COMPONENT SU1825125A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU4775665/25A SU1825125A1 (en) 1989-12-29 1989-12-29 METHOD OF CALIBRATION OF SEMICONDUCTOR SENSITIVE ELEMENT BASED ON METAL OXIDE, INTENDED FOR DETERMINING THE MICROPRIME CONCENTRATION IN THE ATMOSPHERE OF AN UNISMENDABLE COMPONENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU4775665/25A SU1825125A1 (en) 1989-12-29 1989-12-29 METHOD OF CALIBRATION OF SEMICONDUCTOR SENSITIVE ELEMENT BASED ON METAL OXIDE, INTENDED FOR DETERMINING THE MICROPRIME CONCENTRATION IN THE ATMOSPHERE OF AN UNISMENDABLE COMPONENT

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SU1825125A1 true SU1825125A1 (en) 2005-12-27

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2523089C2 (en) * 2012-08-09 2014-07-20 Открытое акционерное общество "Научно-производственное предприятие "Дельта" (ОАО "НПП"Дельта") Calibration of semiconductor gas sensors and device to this end

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2523089C2 (en) * 2012-08-09 2014-07-20 Открытое акционерное общество "Научно-производственное предприятие "Дельта" (ОАО "НПП"Дельта") Calibration of semiconductor gas sensors and device to this end

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