SU1805793A1 - Method for producing bipolar integrated-circuit structures - Google Patents
Method for producing bipolar integrated-circuit structuresInfo
- Publication number
- SU1805793A1 SU1805793A1 SU4851433/25A SU4851433A SU1805793A1 SU 1805793 A1 SU1805793 A1 SU 1805793A1 SU 4851433/25 A SU4851433/25 A SU 4851433/25A SU 4851433 A SU4851433 A SU 4851433A SU 1805793 A1 SU1805793 A1 SU 1805793A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- regions
- silicon
- deposition
- formation
- circuit structures
- Prior art date
Links
Abstract
FIELD: microelectronics, integrated circuit manufacturing process. SUBSTANCE: method involves production of buried layers in silicon substrate, deposition of epitaxial layer, formation of emitter, base, and collector regions in it, opening of contact windows in insulating coat, deposition of metal layer and its photolithographic treatment. Novelty in this method is that before depositing metal layer structures are subjected to plasma-chemical or reaction-ion etching involving complete removal of insulating layer and 30-80 nm of silicon from regions of formation of contact windows during selective etching of silicon in p-type regions to sinicon in n-regions at interval of 1.5: 1-2.5: 1. EFFECT: improved parameters of bipolar integrated-circuit structures. 3 cl
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU4851433/25A SU1805793A1 (en) | 1990-07-16 | 1990-07-16 | Method for producing bipolar integrated-circuit structures |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU4851433/25A SU1805793A1 (en) | 1990-07-16 | 1990-07-16 | Method for producing bipolar integrated-circuit structures |
Publications (1)
Publication Number | Publication Date |
---|---|
SU1805793A1 true SU1805793A1 (en) | 1996-04-27 |
Family
ID=60536938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU4851433/25A SU1805793A1 (en) | 1990-07-16 | 1990-07-16 | Method for producing bipolar integrated-circuit structures |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU1805793A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2653843C2 (en) * | 2016-08-01 | 2018-05-15 | Акционерное общество "Научно-производственное предприятие "Алмаз" (АО "НПП "Алмаз") | Method of increasing the density and stability of a matrix current of a multiple auto-emission cathode |
RU195547U1 (en) * | 2019-11-13 | 2020-01-31 | Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" | PLANAR SILICON P-N-P TRANSISTOR |
-
1990
- 1990-07-16 SU SU4851433/25A patent/SU1805793A1/en active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2653843C2 (en) * | 2016-08-01 | 2018-05-15 | Акционерное общество "Научно-производственное предприятие "Алмаз" (АО "НПП "Алмаз") | Method of increasing the density and stability of a matrix current of a multiple auto-emission cathode |
RU195547U1 (en) * | 2019-11-13 | 2020-01-31 | Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" | PLANAR SILICON P-N-P TRANSISTOR |
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