SU1559993A1 - Transit-time tunnel diode - Google Patents

Transit-time tunnel diode

Info

Publication number
SU1559993A1
SU1559993A1 SU4470637/25A SU4470637A SU1559993A1 SU 1559993 A1 SU1559993 A1 SU 1559993A1 SU 4470637/25 A SU4470637/25 A SU 4470637/25A SU 4470637 A SU4470637 A SU 4470637A SU 1559993 A1 SU1559993 A1 SU 1559993A1
Authority
SU
USSR - Soviet Union
Prior art keywords
transit
time
working frequency
charge carriers
tunnel diode
Prior art date
Application number
SU4470637/25A
Other languages
Russian (ru)
Inventor
Е.И. Голант
В.П. Снегирев
А.С. Тагер
Original Assignee
Е.И. Голант
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Е.И. Голант filed Critical Е.И. Голант
Priority to SU4470637/25A priority Critical patent/SU1559993A1/en
Application granted granted Critical
Publication of SU1559993A1 publication Critical patent/SU1559993A1/en

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

FIELD: electronic engineering. SUBSTANCE: semiconductor layers of double-barrier quantum heterostructure have thickness affording delay of change carriers in quantum well for time equal to approximately quarter the oscillating period at working frequency and transit-time section has length at which transit angle of charge carriers is within 0,75π-π. EFFECT: improved negative dynamic resistance, efficiency, useful power, and maximum working frequency of transmit-time diode with resonance-tuned tunnel injection of charge carriers. 2 dwg
SU4470637/25A 1988-08-08 1988-08-08 Transit-time tunnel diode SU1559993A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU4470637/25A SU1559993A1 (en) 1988-08-08 1988-08-08 Transit-time tunnel diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU4470637/25A SU1559993A1 (en) 1988-08-08 1988-08-08 Transit-time tunnel diode

Publications (1)

Publication Number Publication Date
SU1559993A1 true SU1559993A1 (en) 1995-08-09

Family

ID=60517938

Family Applications (1)

Application Number Title Priority Date Filing Date
SU4470637/25A SU1559993A1 (en) 1988-08-08 1988-08-08 Transit-time tunnel diode

Country Status (1)

Country Link
SU (1) SU1559993A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2445724C1 (en) * 2010-12-07 2012-03-20 Государственное образовательное учреждение высшего профессионального образования Томский государственный университет (ТГУ) Pulsed avalanche diode
RU2609916C1 (en) * 2015-10-20 2017-02-07 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский государственный университет" (ТГУ, НИ ТГУ) Pulsed avalanche s-diode
RU2787544C1 (en) * 2022-06-07 2023-01-10 Федеральное государственное бюджетное учреждение науки Физико-технологический институт имени К.А. Валиева Российской академии наук Transient-time diode with distributed inductive capacitance compensation for terahertz radiation generation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2445724C1 (en) * 2010-12-07 2012-03-20 Государственное образовательное учреждение высшего профессионального образования Томский государственный университет (ТГУ) Pulsed avalanche diode
RU2609916C1 (en) * 2015-10-20 2017-02-07 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский государственный университет" (ТГУ, НИ ТГУ) Pulsed avalanche s-diode
RU2787544C1 (en) * 2022-06-07 2023-01-10 Федеральное государственное бюджетное учреждение науки Физико-технологический институт имени К.А. Валиева Российской академии наук Transient-time diode with distributed inductive capacitance compensation for terahertz radiation generation

Similar Documents

Publication Publication Date Title
ES8601580A1 (en) Semiconductor laser with lateral injection
JPS52109884A (en) Stripe type hetero junction semoonductor laser
KR880013166A (en) Back Bias Voltage Generator
DE3586279D1 (en) PAPERED SEMICONDUCTOR ELEMENT WITH A POTENTIAL MINIMUM FOR MAJORITY CARRIERS.
SU1559993A1 (en) Transit-time tunnel diode
ES8505144A1 (en) Radiation-sensitive semiconductor device having reduced capacitance
JPS5320786A (en) Injection type semiconductor laser element
SU1558263A1 (en) Resonance-tuned transit-time diode
JPS6453582A (en) Variable capacitance diode device
JPS54113822A (en) Substrate bias voltage generating circuit
JPS55148469A (en) Semiconductor rectifier diode
JPS553263A (en) Crystal oscillation circuit
JPS5421286A (en) Reverse conductor thyristor
SU1575858A1 (en) Superconducting tunnel diode
Polupanov Energy spectrum and wave functions of an electron in a surface energy well in a semiconductor.
USD238896S (en)
JPS53123086A (en) Varactor diode
Arkusha et al. Effect of voltage waveform on the energy characteristics of short Gunn diodes.
JPS57130486A (en) Light emitting semiconductor device
JPS52149485A (en) Injection type semiconductor laser element
Lei Soft phonon and its Raman scattering in a charge-density-wave superconductor.
JPS56162980A (en) Gto inverter device
Altukhov et al. Modes of UHF Generation in Gunn Diodes at a Frequency Higher than the Transit Value
JPS52114916A (en) Power supply unit
Kawamoto p/+/-graded junction-n/+/ high-efficiency avalanche/TRAPATT/ diode