SU1559993A1 - Transit-time tunnel diode - Google Patents
Transit-time tunnel diodeInfo
- Publication number
- SU1559993A1 SU1559993A1 SU4470637/25A SU4470637A SU1559993A1 SU 1559993 A1 SU1559993 A1 SU 1559993A1 SU 4470637/25 A SU4470637/25 A SU 4470637/25A SU 4470637 A SU4470637 A SU 4470637A SU 1559993 A1 SU1559993 A1 SU 1559993A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- transit
- time
- working frequency
- charge carriers
- tunnel diode
- Prior art date
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
FIELD: electronic engineering. SUBSTANCE: semiconductor layers of double-barrier quantum heterostructure have thickness affording delay of change carriers in quantum well for time equal to approximately quarter the oscillating period at working frequency and transit-time section has length at which transit angle of charge carriers is within 0,75π-π. EFFECT: improved negative dynamic resistance, efficiency, useful power, and maximum working frequency of transmit-time diode with resonance-tuned tunnel injection of charge carriers. 2 dwg
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU4470637/25A SU1559993A1 (en) | 1988-08-08 | 1988-08-08 | Transit-time tunnel diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU4470637/25A SU1559993A1 (en) | 1988-08-08 | 1988-08-08 | Transit-time tunnel diode |
Publications (1)
Publication Number | Publication Date |
---|---|
SU1559993A1 true SU1559993A1 (en) | 1995-08-09 |
Family
ID=60517938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU4470637/25A SU1559993A1 (en) | 1988-08-08 | 1988-08-08 | Transit-time tunnel diode |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU1559993A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2445724C1 (en) * | 2010-12-07 | 2012-03-20 | Государственное образовательное учреждение высшего профессионального образования Томский государственный университет (ТГУ) | Pulsed avalanche diode |
RU2609916C1 (en) * | 2015-10-20 | 2017-02-07 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский государственный университет" (ТГУ, НИ ТГУ) | Pulsed avalanche s-diode |
RU2787544C1 (en) * | 2022-06-07 | 2023-01-10 | Федеральное государственное бюджетное учреждение науки Физико-технологический институт имени К.А. Валиева Российской академии наук | Transient-time diode with distributed inductive capacitance compensation for terahertz radiation generation |
-
1988
- 1988-08-08 SU SU4470637/25A patent/SU1559993A1/en active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2445724C1 (en) * | 2010-12-07 | 2012-03-20 | Государственное образовательное учреждение высшего профессионального образования Томский государственный университет (ТГУ) | Pulsed avalanche diode |
RU2609916C1 (en) * | 2015-10-20 | 2017-02-07 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский государственный университет" (ТГУ, НИ ТГУ) | Pulsed avalanche s-diode |
RU2787544C1 (en) * | 2022-06-07 | 2023-01-10 | Федеральное государственное бюджетное учреждение науки Физико-технологический институт имени К.А. Валиева Российской академии наук | Transient-time diode with distributed inductive capacitance compensation for terahertz radiation generation |
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