SU151673A1 - Kilopoulos mine furnace for growing crystals - Google Patents

Kilopoulos mine furnace for growing crystals

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Publication number
SU151673A1
SU151673A1 SU755519A SU755519A SU151673A1 SU 151673 A1 SU151673 A1 SU 151673A1 SU 755519 A SU755519 A SU 755519A SU 755519 A SU755519 A SU 755519A SU 151673 A1 SU151673 A1 SU 151673A1
Authority
SU
USSR - Soviet Union
Prior art keywords
kilopoulos
growing crystals
mine furnace
furnace
crystals
Prior art date
Application number
SU755519A
Other languages
Russian (ru)
Inventor
Б.А. Беликович
В.И. Вайданич
Л.Н. Кулик
А.Б. Лыскович
И.М. Спитковский
Original Assignee
Б.А. Беликович
В.И. Вайданич
Л.Н. Кулик
А.Б. Лыскович
И.М. Спитковский
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Б.А. Беликович, В.И. Вайданич, Л.Н. Кулик, А.Б. Лыскович, И.М. Спитковский filed Critical Б.А. Беликович
Priority to SU755519A priority Critical patent/SU151673A1/en
Application granted granted Critical
Publication of SU151673A1 publication Critical patent/SU151673A1/en

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Furnace Details (AREA)

Description

Известна шахтна  печь дл  выращивани  кристаллов методом Киропулоса, снабженна  донным и боко:вым нагревател ми. Выращенные кристаллы диаметром 120-130 мм и высотой 15-20 мм имеют местами оптически непрозрачные участки. Это ухудщает качество люминофора .A known shaft kiln for growing crystals by the Kyropoulos method, equipped with bottom and side heaters. Grown crystals with a diameter of 120-130 mm and a height of 15-20 mm are sometimes optically opaque areas. This degrades the quality of the phosphor.

Предлагаема  шахтна  печь имеет керамическую диафрагму с центральным отверстием диаметром 40-50 мм. Толщина диафрагмы увеличиваетс  от центра (2-3 мм) к периферии (12-15 мм). Диафрагма расположена на доннам нагревателе. Благодар  этим отличи м повышаетс  качество выращиваемых кристаллов.The proposed shaft furnace has a ceramic diaphragm with a central hole with a diameter of 40-50 mm. The thickness of the diaphragm increases from the center (2-3 mm) to the periphery (12-15 mm). The diaphragm is located on the bottom of the heater. Thanks to these differences, the quality of the grown crystals is improved.

Предлагаема  шахтна  печь предназначена дл  выращивани  кристаллов люминофоров NalTe и CsI(Te) диаметром 120-130 мм методом Киропулоса. Подобно извест-кой, она снабжена боковым и донным нагревател ми. Донный нагреватель имеет керамическую диафрагму , толщина которой в центре составл ет 2-3 мм и к периферии повышаетс  до 12-15 мм. Диафрагма имеет центральное отверстие диаметром 40-50 мм. Применение диафрагмы позвол ет обеспечить равномерную скорость роста кристаллов, что дает возможность получить оптически прозрачные кристаллы диаметром 130 и высотой 60 мм с хорошими сцинтилл ционньши характеристиками.The proposed shaft furnace is designed for growing crystals of NalTe and CsI (Te) phosphors with a diameter of 120-130 mm by the Kyropoulos method. Like limestone, it is equipped with side and bottom heaters. The bottom heater has a ceramic diaphragm, the thickness of which in the center is 2-3 mm and rises to the periphery to 12-15 mm. The diaphragm has a central hole with a diameter of 40-50 mm. The use of a diaphragm ensures uniform crystal growth rate, which makes it possible to obtain optically transparent crystals with a diameter of 130 and a height of 60 mm with good scintillation characteristics.

№ 151673- 2 -No. 151673-2 -

Предмет изобретени Subject invention

Шахтна  печь дл  выращивани  кристаллов методом Киропулоса,.. снабженна  боковым и дониым нагревател  м,и, отличающа с  тем, что, с целью повышени  качества выращиваемых кристаллов, она имеет керамическую диафрагму с центральным отверстием диаметром 40- 50 мм и толщиной, увеличивающейс  от центра (2-3 мм) к периферии (12-15 мм), расположенную на донном нагревателе.A crystal furnace for growing crystals using the Kyropoulos method, equipped with side and bottom heaters, and characterized in that, in order to improve the quality of the grown crystals, it has a ceramic diaphragm with a central orifice 40-50 mm thick and increasing from the center (2-3 mm) to the periphery (12-15 mm), located on the bottom heater.

SU755519A 1961-12-11 1961-12-11 Kilopoulos mine furnace for growing crystals SU151673A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU755519A SU151673A1 (en) 1961-12-11 1961-12-11 Kilopoulos mine furnace for growing crystals

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU755519A SU151673A1 (en) 1961-12-11 1961-12-11 Kilopoulos mine furnace for growing crystals

Publications (1)

Publication Number Publication Date
SU151673A1 true SU151673A1 (en) 1962-11-30

Family

ID=48306337

Family Applications (1)

Application Number Title Priority Date Filing Date
SU755519A SU151673A1 (en) 1961-12-11 1961-12-11 Kilopoulos mine furnace for growing crystals

Country Status (1)

Country Link
SU (1) SU151673A1 (en)

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