SU145106A1 - Silicon Carbide Coating Method - Google Patents
Silicon Carbide Coating MethodInfo
- Publication number
- SU145106A1 SU145106A1 SU732730A SU732730A SU145106A1 SU 145106 A1 SU145106 A1 SU 145106A1 SU 732730 A SU732730 A SU 732730A SU 732730 A SU732730 A SU 732730A SU 145106 A1 SU145106 A1 SU 145106A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- silicon carbide
- coating method
- carbide coating
- coating
- silicon
- Prior art date
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Description
Известны способы на«есени покрытий карбида кремни на поверхность металлических или графитовых изделий путем осаждени покрытий из газовой среды на нагретую поверхность изделий в атмосфере водорода или в вакууме.Methods are known for the application of a coating of silicon carbide coatings on the surface of metal or graphite products by depositing coatings from a gaseous medium onto a heated surface of products in a hydrogen atmosphere or in vacuum.
Описываемый способ нанесени покрытий карбида кремни отличаетс от известных тем, что в качестве исходной газовой среды используют пары кремнеорганических соединений типа метилдихлорсилана или метилтрихлорсилана, у которых молекула содержит равное число атомов кремни и углерода.The described method of coating silicon carbide coatings differs from the known ones in that the initial gaseous medium uses pairs of organosilicon compounds such as methyldichlorosilane or methyltrichlorosilane, in which the molecule contains equal numbers of silicon and carbon atoms.
Такой способ нанесени покрытий карбида кремни позвол ет упростить технологию и повысить качество покрыти .This method of coating silicon carbide allows for simpler technology and higher coating quality.
На чертеже изображена схема аппаратуры дл осуществлени предлагаемого способа нанесени покрытий карбида кремни .The drawing shows an apparatus diagram for carrying out the proposed method for coating silicon carbide.
Аппаратура, в которой производ т нанесение слоев карбида кремни , состоит из блока 1 очистки водорода с приборами дл измерени и поддержани посто нной скорости водорода, блока 2 подачи метилхлорсиланов в реакционную камеру с посто нной скоростью, реакционной камеры 3 и блока 4 электропитани .The apparatus in which silicon carbide layers are deposited consists of a hydrogen purification unit 1 with instruments for measuring and maintaining a constant hydrogen rate, a methyl chlorosilane supply unit 2 at a constant speed, a reaction chamber 3, and a power supply unit 4.
Предлагаемый способ нанесени покрытий из карбида кремни заключаетс в разложении кремнеорганических соединений типа метилдихлорсилана или метилтрихлорсилана, у которых молекула содерх ит равное число атомов кремни и углерода, как и в карбиде кремни . При таком соотношении этих элементов в молекуле исходного соединени они имеют пр мую химическую св зь друг с другом. Термическое разложение этих соединений легко и быстро протекает на поверхност х, нагретых до сравнительно невысоких температур (1000-1500), причем в атмосфере водорода образуютс плотные и однородные слои карбида кремни , не содержащие избыточных количеств кремни и углерода.The proposed method for coating silicon carbide consists in decomposing organosilicon compounds such as methyldichlorosilane or methyltrichlorosilane, in which the molecule contains an equal number of silicon atoms and carbon, as in silicon carbide. With such a ratio of these elements in the parent compound molecule, they have a direct chemical bond with each other. The thermal decomposition of these compounds proceeds easily and quickly on surfaces heated to relatively low temperatures (1000-1500), and in a hydrogen atmosphere, dense and uniform layers of silicon carbide are formed that do not contain excessive amounts of silicon and carbon.
Водород из баллона 5 поступает в блок очистки, где очищаетс от кислорода, воды, следов углекислоты и других летучих и взвещенных в нем примесей.The hydrogen from cylinder 5 enters the purification unit, where it is purified from oxygen, water, traces of carbon dioxide, and other volatile and impurities in it.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU732730A SU145106A1 (en) | 1961-05-27 | 1961-05-27 | Silicon Carbide Coating Method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU732730A SU145106A1 (en) | 1961-05-27 | 1961-05-27 | Silicon Carbide Coating Method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU145106A1 true SU145106A1 (en) | 1961-11-30 |
Family
ID=48300708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU732730A SU145106A1 (en) | 1961-05-27 | 1961-05-27 | Silicon Carbide Coating Method |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU145106A1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1521540B1 (en) * | 1966-05-07 | 1970-04-16 | Texas Instruments Inc | Method and device for the production of silicon carbide layers and shaped bodies |
| US3508954A (en) * | 1967-10-05 | 1970-04-28 | Texaco Inc | Silicon carbide structures |
| US3622369A (en) * | 1967-02-24 | 1971-11-23 | United Aircraft Corp | Process for forming stoichiometric silicon carbide coatings and filaments |
| US3850689A (en) * | 1966-07-18 | 1974-11-26 | United Aircraft Corp | Procedures for coating substrates with silicon carbide |
| RU2684128C1 (en) * | 2018-04-06 | 2019-04-04 | Общество с ограниченной ответственностью "Научно технический центр "Новые технологии" | Article with silicon carbide coating and method for manufacturing of article with silicon carbide coating |
-
1961
- 1961-05-27 SU SU732730A patent/SU145106A1/en active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1521540B1 (en) * | 1966-05-07 | 1970-04-16 | Texas Instruments Inc | Method and device for the production of silicon carbide layers and shaped bodies |
| US3850689A (en) * | 1966-07-18 | 1974-11-26 | United Aircraft Corp | Procedures for coating substrates with silicon carbide |
| US3622369A (en) * | 1967-02-24 | 1971-11-23 | United Aircraft Corp | Process for forming stoichiometric silicon carbide coatings and filaments |
| US3508954A (en) * | 1967-10-05 | 1970-04-28 | Texaco Inc | Silicon carbide structures |
| RU2684128C1 (en) * | 2018-04-06 | 2019-04-04 | Общество с ограниченной ответственностью "Научно технический центр "Новые технологии" | Article with silicon carbide coating and method for manufacturing of article with silicon carbide coating |
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