SG99329A1 - Buried metal body contact structure and method for fabricating soi mofset devices - Google Patents
Buried metal body contact structure and method for fabricating soi mofset devicesInfo
- Publication number
- SG99329A1 SG99329A1 SG200100120A SG200100120A SG99329A1 SG 99329 A1 SG99329 A1 SG 99329A1 SG 200100120 A SG200100120 A SG 200100120A SG 200100120 A SG200100120 A SG 200100120A SG 99329 A1 SG99329 A1 SG 99329A1
- Authority
- SG
- Singapore
- Prior art keywords
- mofset
- devices
- metal body
- contact structure
- body contact
- Prior art date
Links
- 239000002184 metal Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US48191400A | 2000-01-12 | 2000-01-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG99329A1 true SG99329A1 (en) | 2003-10-27 |
Family
ID=23913885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200100120A SG99329A1 (en) | 2000-01-12 | 2001-01-05 | Buried metal body contact structure and method for fabricating soi mofset devices |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2001230423A (en) |
| KR (1) | KR20010070479A (en) |
| CN (1) | CN1223005C (en) |
| SG (1) | SG99329A1 (en) |
| TW (1) | TW473914B (en) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10224615A1 (en) * | 2002-06-04 | 2003-12-18 | Philips Intellectual Property | Semiconductor device and method of manufacturing the same |
| JP2004103612A (en) | 2002-09-04 | 2004-04-02 | Toshiba Corp | Semiconductor device and its manufacturing method |
| KR100612418B1 (en) | 2004-09-24 | 2006-08-16 | 삼성전자주식회사 | Semiconductor device having self-aligned body and method of fabricating the same |
| KR100689712B1 (en) * | 2006-03-23 | 2007-03-08 | 삼성전자주식회사 | Structure and method for manufacturing semiconductor memory device |
| JP5526529B2 (en) * | 2008-11-18 | 2014-06-18 | 株式会社ニコン | Multilayer semiconductor device and method for manufacturing multilayer semiconductor device |
| EP2937898A1 (en) | 2009-07-15 | 2015-10-28 | Silanna Semiconductor U.S.A., Inc. | Semiconductor-on-insulator with backside heat dissipation |
| US9496227B2 (en) | 2009-07-15 | 2016-11-15 | Qualcomm Incorporated | Semiconductor-on-insulator with back side support layer |
| US9466719B2 (en) | 2009-07-15 | 2016-10-11 | Qualcomm Incorporated | Semiconductor-on-insulator with back side strain topology |
| TWI509780B (en) | 2009-07-15 | 2015-11-21 | Silanna Semiconductor Usa Inc | Integrated circuit and method of fabricating the same |
| US8912646B2 (en) | 2009-07-15 | 2014-12-16 | Silanna Semiconductor U.S.A., Inc. | Integrated circuit assembly and method of making |
| US9390974B2 (en) | 2012-12-21 | 2016-07-12 | Qualcomm Incorporated | Back-to-back stacked integrated circuit assembly and method of making |
| TWI515878B (en) | 2009-07-15 | 2016-01-01 | 西拉娜半導體美國股份有限公司 | Semiconductor-on-insulator structure, method of removing unwanted accumulated majority-type carriers from the channel of a semiconductor-on-insulator active device, and method of fabricatiing an integrated circuit |
| CN103441131A (en) * | 2013-08-29 | 2013-12-11 | 上海宏力半导体制造有限公司 | Partially-depleted silicon-on-insulator device structure |
| US9515181B2 (en) | 2014-08-06 | 2016-12-06 | Qualcomm Incorporated | Semiconductor device with self-aligned back side features |
| US9780117B2 (en) * | 2014-10-22 | 2017-10-03 | Qualcomm Incorporated | Semiconductor structure with active device and damaged region |
| US9768109B2 (en) * | 2015-09-22 | 2017-09-19 | Qualcomm Incorporated | Integrated circuits (ICS) on a glass substrate |
| US9780210B1 (en) * | 2016-08-11 | 2017-10-03 | Qualcomm Incorporated | Backside semiconductor growth |
| CN110164978B (en) * | 2018-02-14 | 2022-06-21 | 联华电子股份有限公司 | Semiconductor device and method for manufacturing the same |
| RU2739861C1 (en) * | 2020-03-16 | 2020-12-29 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") | Manufacturing method of transistor with independent contact to substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5559368A (en) * | 1994-08-30 | 1996-09-24 | The Regents Of The University Of California | Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation |
| US5828101A (en) * | 1995-03-30 | 1998-10-27 | Kabushiki Kaisha Toshiba | Three-terminal semiconductor device and related semiconductor devices |
-
2000
- 2000-12-27 TW TW089127984A patent/TW473914B/en not_active IP Right Cessation
- 2000-12-29 CN CNB001294989A patent/CN1223005C/en not_active Expired - Fee Related
-
2001
- 2001-01-04 JP JP2001000078A patent/JP2001230423A/en active Pending
- 2001-01-05 SG SG200100120A patent/SG99329A1/en unknown
- 2001-01-10 KR KR1020010001250A patent/KR20010070479A/en active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5559368A (en) * | 1994-08-30 | 1996-09-24 | The Regents Of The University Of California | Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation |
| US5828101A (en) * | 1995-03-30 | 1998-10-27 | Kabushiki Kaisha Toshiba | Three-terminal semiconductor device and related semiconductor devices |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010070479A (en) | 2001-07-25 |
| JP2001230423A (en) | 2001-08-24 |
| CN1223005C (en) | 2005-10-12 |
| CN1308378A (en) | 2001-08-15 |
| TW473914B (en) | 2002-01-21 |
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