SG90248A1 - Methods for improving chemical vapor deposition processing - Google Patents

Methods for improving chemical vapor deposition processing

Info

Publication number
SG90248A1
SG90248A1 SG200102820A SG200102820A SG90248A1 SG 90248 A1 SG90248 A1 SG 90248A1 SG 200102820 A SG200102820 A SG 200102820A SG 200102820 A SG200102820 A SG 200102820A SG 90248 A1 SG90248 A1 SG 90248A1
Authority
SG
Singapore
Prior art keywords
methods
vapor deposition
chemical vapor
deposition processing
improving chemical
Prior art date
Application number
SG200102820A
Other languages
English (en)
Inventor
Robertson Robert
Kollrack Mike
Lee Angela
Takehara Takako
Feng Jeff
Shang Quanyuan
Law Kam
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG90248A1 publication Critical patent/SG90248A1/en

Links

Classifications

    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Epidemiology (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
SG200102820A 2000-05-12 2001-05-11 Methods for improving chemical vapor deposition processing SG90248A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56955100A 2000-05-12 2000-05-12

Publications (1)

Publication Number Publication Date
SG90248A1 true SG90248A1 (en) 2002-07-23

Family

ID=24275897

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200102820A SG90248A1 (en) 2000-05-12 2001-05-11 Methods for improving chemical vapor deposition processing

Country Status (5)

Country Link
EP (1) EP1154037A1 (ko)
JP (1) JP2002060950A (ko)
KR (1) KR20010106232A (ko)
SG (1) SG90248A1 (ko)
TW (1) TW522475B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4411215B2 (ja) 2002-11-11 2010-02-10 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US7288284B2 (en) * 2004-03-26 2007-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Post-cleaning chamber seasoning method
KR100652427B1 (ko) * 2005-08-22 2006-12-01 삼성전자주식회사 Ａｌｄ에 의한 도전성 폴리실리콘 박막 형성 방법 및 이를이용한 반도체 소자의 제조 방법
JP4597088B2 (ja) * 2006-03-31 2010-12-15 川崎マイクロエレクトロニクス株式会社 半導体装置の製造方法
US8877617B2 (en) * 2012-09-27 2014-11-04 Sunpower Corporation Methods and structures for forming and protecting thin films on substrates

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5207836A (en) * 1989-08-25 1993-05-04 Applied Materials, Inc. Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus
US5326723A (en) * 1992-09-09 1994-07-05 Intel Corporation Method for improving stability of tungsten chemical vapor deposition
US5824375A (en) * 1996-10-24 1998-10-20 Applied Materials, Inc. Decontamination of a plasma reactor using a plasma after a chamber clean

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07100865B2 (ja) * 1986-03-13 1995-11-01 富士通株式会社 減圧ｃｖｄ処理装置のクリーニング法
JP2708533B2 (ja) * 1989-03-14 1998-02-04 富士通株式会社 Ｃｖｄ装置の残留ガス除去方法
US5647953A (en) * 1995-12-22 1997-07-15 Lam Research Corporation Plasma cleaning method for removing residues in a plasma process chamber
US6020035A (en) * 1996-10-29 2000-02-01 Applied Materials, Inc. Film to tie up loose fluorine in the chamber after a clean process
FR2784228B1 (fr) * 1998-10-01 2002-01-11 France Telecom PROCEDE DE FORMATION D'UN FILM ANTIREFLECHISSANT SiON, NON-POLLUANT VIS-VIS DES RESINES PHOTORESISTANTES POUR U.V. LOINTAIN

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5207836A (en) * 1989-08-25 1993-05-04 Applied Materials, Inc. Cleaning process for removal of deposits from the susceptor of a chemical vapor deposition apparatus
US5326723A (en) * 1992-09-09 1994-07-05 Intel Corporation Method for improving stability of tungsten chemical vapor deposition
US5824375A (en) * 1996-10-24 1998-10-20 Applied Materials, Inc. Decontamination of a plasma reactor using a plasma after a chamber clean

Also Published As

Publication number Publication date
TW522475B (en) 2003-03-01
JP2002060950A (ja) 2002-02-28
KR20010106232A (ko) 2001-11-29
EP1154037A1 (en) 2001-11-14

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