SG79200A1 - Ferroelectric memory devices and method for testing them - Google Patents

Ferroelectric memory devices and method for testing them

Info

Publication number
SG79200A1
SG79200A1 SG9610487A SG1996010487A SG79200A1 SG 79200 A1 SG79200 A1 SG 79200A1 SG 9610487 A SG9610487 A SG 9610487A SG 1996010487 A SG1996010487 A SG 1996010487A SG 79200 A1 SG79200 A1 SG 79200A1
Authority
SG
Singapore
Prior art keywords
testing
memory devices
ferroelectric memory
ferroelectric
devices
Prior art date
Application number
SG9610487A
Other languages
English (en)
Inventor
Hirano Hiroshige
Moriwaki Nobuyuki
Nakakuma Tetsuji
Honda Toshiyuki
Nakane George
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of SG79200A1 publication Critical patent/SG79200A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/10—Arrangements for interconnecting storage elements electrically, e.g. by wiring for interconnecting capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Tests Of Electronic Circuits (AREA)
SG9610487A 1995-08-21 1996-08-19 Ferroelectric memory devices and method for testing them SG79200A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21194395 1995-08-21

Publications (1)

Publication Number Publication Date
SG79200A1 true SG79200A1 (en) 2001-03-20

Family

ID=16614268

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9610487A SG79200A1 (en) 1995-08-21 1996-08-19 Ferroelectric memory devices and method for testing them

Country Status (5)

Country Link
US (1) US5751628A (fr)
EP (1) EP0759620B1 (fr)
KR (1) KR100212488B1 (fr)
DE (1) DE69620318T2 (fr)
SG (1) SG79200A1 (fr)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6008659A (en) * 1996-03-15 1999-12-28 Ramtron International Corporation Method of measuring retention performance and imprint degradation of ferroelectric films
KR100224673B1 (ko) * 1996-12-13 1999-10-15 윤종용 불휘발성 강유전체 메모리장치 및 그의 구동방법
US6097624A (en) * 1997-09-17 2000-08-01 Samsung Electronics Co., Ltd. Methods of operating ferroelectric memory devices having reconfigurable bit lines
KR100297874B1 (ko) 1997-09-08 2001-10-24 윤종용 강유전체랜덤액세스메모리장치
JPH11110976A (ja) * 1997-10-02 1999-04-23 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP3780713B2 (ja) * 1998-08-25 2006-05-31 富士通株式会社 強誘電体メモリ、強誘電体メモリの製造方法及び強誘電体メモリの試験方法
KR100548847B1 (ko) 1998-10-28 2006-03-31 주식회사 하이닉스반도체 수명을 연장시킨 강유전체 메모리 장치
KR100303056B1 (ko) * 1998-11-07 2001-11-22 윤종용 온-칩테스트회로를구비한강유전체메모리장치
US6238933B1 (en) 1999-05-06 2001-05-29 Ramtron International Corporation Polarization method for minimizing the effects of hydrogen damage on ferroelectric thin film capacitors
US6359819B1 (en) * 2000-12-29 2002-03-19 Stmicroelectronics, Inc.. Circuit and method for performing a stress test on a ferroelectric memory device
KR100389130B1 (ko) * 2001-04-25 2003-06-25 삼성전자주식회사 2비트 동작의 2트랜지스터를 구비한 불휘발성 메모리소자
KR100400773B1 (ko) 2001-06-29 2003-10-08 주식회사 하이닉스반도체 강유전체 랜덤 억세스 메모리의 강유전 캐패시터 테스트회로
CN100336226C (zh) 2001-12-14 2007-09-05 株式会社日立制作所 半导体器件
US6809949B2 (en) 2002-05-06 2004-10-26 Symetrix Corporation Ferroelectric memory
KR100506450B1 (ko) * 2003-01-24 2005-08-05 주식회사 하이닉스반도체 불휘발성 강유전체 메모리를 이용한 테스트 모드 제어 장치
JP3592321B2 (ja) * 2003-01-31 2004-11-24 沖電気工業株式会社 強誘電体メモリおよびその判定方法
KR100557560B1 (ko) * 2003-08-27 2006-03-03 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치 및 그 테스트 방법
KR100838639B1 (ko) 2006-11-07 2008-06-16 후지쯔 가부시끼가이샤 반도체 기억장치의 검사 방법
JP2008217936A (ja) * 2007-03-06 2008-09-18 Elpida Memory Inc 半導体記憶装置
JP2010102793A (ja) * 2008-10-24 2010-05-06 Toshiba Corp 半導体記憶装置
US10120674B2 (en) * 2015-06-02 2018-11-06 Texas Instruments Incorporated Ferroelectric memory expansion for firmware updates
US9734886B1 (en) * 2016-02-01 2017-08-15 Micron Technology, Inc Cell-based reference voltage generation
US9892776B2 (en) 2016-06-13 2018-02-13 Micron Technology, Inc. Half density ferroelectric memory and operation

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0396221A2 (fr) * 1989-05-05 1990-11-07 Ramtron International Corporation Condensateur ferro-électrique intégré
EP0598596A1 (fr) * 1992-11-17 1994-05-25 Ramtron International Corporation Mémoire ferro-électrique non-volatile avec des lignes de bit repliées et procédé de fabrication
EP0627741A2 (fr) * 1993-04-09 1994-12-07 Matsushita Electric Industrial Co., Ltd. Dispositif de mémoire à semiconducteurs

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US5297077A (en) * 1990-03-30 1994-03-22 Kabushiki Kaisha Toshiba Memory having ferroelectric capacitors polarized in nonvolatile mode
KR970000870B1 (ko) * 1992-12-02 1997-01-20 마쯔시다덴기산교 가부시기가이샤 반도체메모리장치
US5406510A (en) * 1993-07-15 1995-04-11 Symetrix Corporation Non-volatile memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0396221A2 (fr) * 1989-05-05 1990-11-07 Ramtron International Corporation Condensateur ferro-électrique intégré
EP0598596A1 (fr) * 1992-11-17 1994-05-25 Ramtron International Corporation Mémoire ferro-électrique non-volatile avec des lignes de bit repliées et procédé de fabrication
EP0627741A2 (fr) * 1993-04-09 1994-12-07 Matsushita Electric Industrial Co., Ltd. Dispositif de mémoire à semiconducteurs

Also Published As

Publication number Publication date
DE69620318T2 (de) 2002-10-31
EP0759620B1 (fr) 2002-04-03
US5751628A (en) 1998-05-12
EP0759620A2 (fr) 1997-02-26
DE69620318D1 (de) 2002-05-08
KR100212488B1 (ko) 1999-08-02
EP0759620A3 (fr) 1999-01-13
KR970012682A (ko) 1997-03-29

Similar Documents

Publication Publication Date Title
GB2299208B (en) Ferroelectric memory device and manufacturing method thereof
SG79200A1 (en) Ferroelectric memory devices and method for testing them
GB2318230B (en) A ferroelectric memory device and a nondestructive acessing method thereof
IL109921A0 (en) Method and apparatus for configuring memory circuits
EP0777813A4 (fr) Isolation de formations, appareil de test et procede s'y rapportant
GB9426065D0 (en) Memory addressing method and memory device
EP0973097A4 (fr) Memoire et procede d'acces
GB9514964D0 (en) Anchoring apparatus and method
SG64943A1 (en) Ferroelectric memory device
GB2320774B (en) Method and system for refreshing memory
SG63746A1 (en) Method and system for testing memory
GB2315887B (en) Method and apparatus for re-programming memory device
AU5715396A (en) A method and apparatus for limiting access to a nonvolatile memory device
IL112737A0 (en) Method and apparatus for controlling dynamic random access memory devices
EP0657935A3 (fr) Dispositif de mémoire semi-conducteur et procédé de fabrication.
EP0868665A4 (fr) Procede et dispositif d'analyse de matieres fecales
GB2306235B (en) Method for accessing memory device and memory accessing device
GB9417269D0 (en) Memory and test method therefor
GB2301917B (en) A memory device and method of operation
EP0741388A3 (fr) Architecture de mémoire ferro-électrique et procédé de fabrication
GB2306238B (en) Device and method for memory access
GB9525078D0 (en) Identification device and method
EP0723297A3 (fr) Dispositif de mémoire semi-conductrice et procédé de fabrication associé
EP0848352A4 (fr) Dispositif et procede de manutention de support
GB2312061B (en) Semiconductor memory device and method of operation