SG74662A1 - Electronic component method for making and target therefor - Google Patents
Electronic component method for making and target thereforInfo
- Publication number
- SG74662A1 SG74662A1 SG1998003714A SG1998003714A SG74662A1 SG 74662 A1 SG74662 A1 SG 74662A1 SG 1998003714 A SG1998003714 A SG 1998003714A SG 1998003714 A SG1998003714 A SG 1998003714A SG 74662 A1 SG74662 A1 SG 74662A1
- Authority
- SG
- Singapore
- Prior art keywords
- making
- electronic component
- component method
- target therefor
- therefor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Ceramic Capacitors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94142397A | 1997-09-30 | 1997-09-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG74662A1 true SG74662A1 (en) | 2000-08-22 |
Family
ID=25476442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG1998003714A SG74662A1 (en) | 1997-09-30 | 1998-09-18 | Electronic component method for making and target therefor |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH11238412A (ja) |
KR (1) | KR19990030185A (ja) |
CN (1) | CN1213145A (ja) |
SG (1) | SG74662A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100351450B1 (ko) * | 1999-12-30 | 2002-09-09 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자 및 그 제조방법 |
KR20010066386A (ko) * | 1999-12-31 | 2001-07-11 | 박종섭 | 플래시 메모리의 게이트전극 제조방법 |
-
1998
- 1998-09-18 SG SG1998003714A patent/SG74662A1/en unknown
- 1998-09-28 KR KR1019980040193A patent/KR19990030185A/ko not_active Application Discontinuation
- 1998-09-30 CN CN98120858A patent/CN1213145A/zh active Pending
- 1998-09-30 JP JP10292986A patent/JPH11238412A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPH11238412A (ja) | 1999-08-31 |
CN1213145A (zh) | 1999-04-07 |
KR19990030185A (ko) | 1999-04-26 |
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