SG73500A1 - Device for etching or percipitation using a plasma - Google Patents

Device for etching or percipitation using a plasma

Info

Publication number
SG73500A1
SG73500A1 SG1998000356A SG1998000356A SG73500A1 SG 73500 A1 SG73500 A1 SG 73500A1 SG 1998000356 A SG1998000356 A SG 1998000356A SG 1998000356 A SG1998000356 A SG 1998000356A SG 73500 A1 SG73500 A1 SG 73500A1
Authority
SG
Singapore
Prior art keywords
percipitation
etching
plasma
Prior art date
Application number
SG1998000356A
Other languages
English (en)
Inventor
Heinz Fabian
Jurgen Pottker
Original Assignee
Shinetsu Quartz Prod
Heraeus Quarzglas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Quartz Prod, Heraeus Quarzglas filed Critical Shinetsu Quartz Prod
Publication of SG73500A1 publication Critical patent/SG73500A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
SG1998000356A 1997-02-19 1998-02-18 Device for etching or percipitation using a plasma SG73500A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19706556A DE19706556C1 (de) 1997-02-19 1997-02-19 Vorrichtung zum Ätzen oder zum Abscheiden unter Verwendung eines Plasmas sowie in der Vorrichtung verwendetes rohrförmiges Abschirmelement

Publications (1)

Publication Number Publication Date
SG73500A1 true SG73500A1 (en) 2000-06-20

Family

ID=7820823

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998000356A SG73500A1 (en) 1997-02-19 1998-02-18 Device for etching or percipitation using a plasma

Country Status (5)

Country Link
JP (1) JP3812861B2 (ja)
KR (1) KR19980071517A (ja)
DE (1) DE19706556C1 (ja)
SG (1) SG73500A1 (ja)
TW (1) TW400395B (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI651429B (zh) * 2014-01-15 2019-02-21 澳洲商葛利文企業有限公司 用於減少薄膜中不純物之裝置及方法
TWI720090B (zh) 2015-12-18 2021-03-01 德商何瑞斯廓格拉斯公司 於石英玻璃之製備中作為中間物之經碳摻雜二氧化矽顆粒的製備
US10730780B2 (en) 2015-12-18 2020-08-04 Heraeus Quarzglas Gmbh & Co. Kg Preparation of a quartz glass body in a multi-chamber oven
EP3390308A1 (de) 2015-12-18 2018-10-24 Heraeus Quarzglas GmbH & Co. KG Glasfasern und vorformen aus quarzglas mit geringem oh-, cl- und al-gehalt
KR20180095624A (ko) 2015-12-18 2018-08-27 헤래우스 크바르츠글라스 게엠베하 ＆ 컴파니 케이지 불투명 실리카 유리 제품의 제조
TWI813534B (zh) 2015-12-18 2023-09-01 德商何瑞斯廓格拉斯公司 利用露點監測在熔融烘箱中製備石英玻璃體
US11952303B2 (en) 2015-12-18 2024-04-09 Heraeus Quarzglas Gmbh & Co. Kg Increase in silicon content in the preparation of quartz glass
CN109153593A (zh) 2015-12-18 2019-01-04 贺利氏石英玻璃有限两合公司 合成石英玻璃粉粒的制备
CN108698883A (zh) 2015-12-18 2018-10-23 贺利氏石英玻璃有限两合公司 石英玻璃制备中的二氧化硅的喷雾造粒
WO2017103115A2 (de) 2015-12-18 2017-06-22 Heraeus Quarzglas Gmbh & Co. Kg Herstellung eines quarzglaskörpers in einem schmelztiegel aus refraktärmetall
JP6981710B2 (ja) 2015-12-18 2021-12-17 ヘレウス クワルツグラス ゲーエムベーハー ウント コンパニー カーゲー 二酸化ケイ素造粒体からの石英ガラス体の調製
JP6987021B2 (ja) * 2018-05-28 2021-12-22 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5443686A (en) * 1992-01-15 1995-08-22 International Business Machines Corporation Inc. Plasma CVD apparatus and processes

Also Published As

Publication number Publication date
DE19706556C1 (de) 1998-08-13
KR19980071517A (ko) 1998-10-26
JP3812861B2 (ja) 2006-08-23
TW400395B (en) 2000-08-01
JPH10321596A (ja) 1998-12-04

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