SG70892G - Semiconductor die-attach technique and composition therefor - Google Patents
Semiconductor die-attach technique and composition thereforInfo
- Publication number
- SG70892G SG70892G SG708/92A SG70892A SG70892G SG 70892 G SG70892 G SG 70892G SG 708/92 A SG708/92 A SG 708/92A SG 70892 A SG70892 A SG 70892A SG 70892 G SG70892 G SG 70892G
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor die
- composition therefor
- attach technique
- attach
- technique
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4827—Materials
- H01L23/4828—Conductive organic material or pastes, e.g. conductive adhesives, inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/444,267 US4487638A (en) | 1982-11-24 | 1982-11-24 | Semiconductor die-attach technique and composition therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
SG70892G true SG70892G (en) | 1992-09-04 |
Family
ID=23764181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG708/92A SG70892G (en) | 1982-11-24 | 1992-07-07 | Semiconductor die-attach technique and composition therefor |
Country Status (8)
Country | Link |
---|---|
US (1) | US4487638A (fr) |
EP (1) | EP0110307B1 (fr) |
JP (1) | JPS60500046A (fr) |
CA (2) | CA1200625A (fr) |
DE (1) | DE3380430D1 (fr) |
HK (1) | HK81492A (fr) |
SG (1) | SG70892G (fr) |
WO (1) | WO1984002097A1 (fr) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4563224A (en) * | 1981-10-05 | 1986-01-07 | Raychem Corporation | Soldering flux containing a temperature sensitive chemically reactive colorant |
US4809901A (en) * | 1981-10-05 | 1989-03-07 | Raychem Corporation | Soldering methods and devices |
US4705205A (en) * | 1983-06-30 | 1987-11-10 | Raychem Corporation | Chip carrier mounting device |
EP0142783B1 (fr) * | 1983-11-11 | 1990-04-18 | Kabushiki Kaisha Toshiba | Procédé pour la fabrication d'un circuit intégré hybride |
US4929516A (en) * | 1985-03-14 | 1990-05-29 | Olin Corporation | Semiconductor die attach system |
US4645545A (en) * | 1985-04-09 | 1987-02-24 | Louis Middlestadt | Shape retaining bodies of solder containing flux and their method of manufacture and use |
EP0205686A1 (fr) * | 1985-06-13 | 1986-12-30 | Kidd, Inc. | Pâte électroconductrice pour le montage d'un dé semi-conducteur |
US4694572A (en) * | 1986-06-13 | 1987-09-22 | Tektronix, Inc. | Printed polymer circuit board method |
US4978052A (en) * | 1986-11-07 | 1990-12-18 | Olin Corporation | Semiconductor die attach system |
US4872047A (en) * | 1986-11-07 | 1989-10-03 | Olin Corporation | Semiconductor die attach system |
US4919729A (en) * | 1988-06-08 | 1990-04-24 | International Business Machines Corporation | Solder paste for use in a reducing atmosphere |
US5001542A (en) * | 1988-12-05 | 1991-03-19 | Hitachi Chemical Company | Composition for circuit connection, method for connection using the same, and connected structure of semiconductor chips |
US5127969A (en) * | 1990-03-22 | 1992-07-07 | University Of Cincinnati | Reinforced solder, brazing and welding compositions and methods for preparation thereof |
US5150832A (en) * | 1991-06-28 | 1992-09-29 | At&T Bell Laboratories | Solder paste |
US5286417A (en) * | 1991-12-06 | 1994-02-15 | International Business Machines Corporation | Method and composition for making mechanical and electrical contact |
EP0610709B1 (fr) * | 1993-02-11 | 1998-06-10 | Siemens Aktiengesellschaft | Procédé pour fabriquer des dispositifs à circuits tridimensionnels |
JPH07221217A (ja) * | 1993-12-10 | 1995-08-18 | Sumitomo Kinzoku Ceramics:Kk | 半導体パッケージ用リッドおよび半導体パッケージ |
DE19511553C2 (de) * | 1995-03-29 | 1997-02-20 | Litton Precision Prod Int | Verfahren zur Erzeugung elektrisch leitfähiger Strukturen, eine nach dem Verfahren erhaltene elektrisch leitfähige Struktur sowie Kombination zur Erzeugung elektrisch leitfähiger Strukturen |
EP0831981B1 (fr) * | 1995-05-24 | 2007-03-14 | Fry's Metals Inc. | Flux decapant exempt de composes organiques volatils, a base de resine epoxy |
DE19546285A1 (de) * | 1995-12-12 | 1997-06-19 | Telefunken Microelectron | Elektronisches Modul |
DE19610112C2 (de) * | 1996-03-14 | 2000-04-06 | Tech Gmbh Antriebstechnik Und | Verfahren zum Auflöten von Halbleiterchips |
US5897336A (en) * | 1996-08-05 | 1999-04-27 | International Business Machines Corporation | Direct chip attach for low alpha emission interconnect system |
DE19640192A1 (de) * | 1996-09-30 | 1998-04-02 | Bosch Gmbh Robert | Verfahren zur Flip-Chip-Montage |
US6144104A (en) | 1999-03-24 | 2000-11-07 | Visteon Corporation | High-operating-temperature electronic component |
DE19947914A1 (de) * | 1999-10-06 | 2001-04-12 | Abb Research Ltd | Verfahren zum Weichlöten von Komponenten und weichgelötete Anordnung |
US20010048888A1 (en) * | 2000-03-24 | 2001-12-06 | Rong-Fong Huang | Anti-scavenging solders for silver metallization and method |
AU2001249378A1 (en) * | 2000-03-24 | 2001-10-08 | Motorola, Inc. | Anti-scavenging solders for silver metallization and method |
DE10015962C2 (de) * | 2000-03-30 | 2002-04-04 | Infineon Technologies Ag | Hochtemperaturfeste Lotverbindung für Halbleiterbauelement |
DE10015964C2 (de) * | 2000-03-30 | 2002-06-13 | Infineon Technologies Ag | Lotband für flexible und temperaturfeste Lotverbindungen |
JP4247323B2 (ja) | 2001-02-23 | 2009-04-02 | エヌエックスピー ビー ヴィ | 半導体デバイスを導電プレートにボンディングする方法 |
US6900525B2 (en) * | 2003-05-21 | 2005-05-31 | Kyocera America, Inc. | Semiconductor package having filler metal of gold/silver/copper alloy |
JP6575301B2 (ja) * | 2014-10-31 | 2019-09-18 | 三菱マテリアル株式会社 | 封止用ペースト、ろう接合材とその製造方法、封止用蓋材とその製造方法、及びパッケージ封止方法 |
CN109923225B (zh) | 2016-09-27 | 2021-08-10 | 梅塔洛比利时公司 | 改进型焊料及用于生产高纯铅的方法 |
JP2020520410A (ja) * | 2017-05-12 | 2020-07-09 | ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー | 金属ペーストの手段によりコンポーネントを接続する方法 |
DE112019005431T5 (de) * | 2018-10-31 | 2021-07-15 | Robert Bosch Gmbh | Mischlegierungslotpaste, verfahren zur herstellung derselben und lötverfahren |
US11267080B2 (en) | 2019-05-09 | 2022-03-08 | Indium Corporation | Low temperature melting and mid temperature melting lead-free solder paste with mixed solder alloy powders |
EP3806146A1 (fr) | 2019-10-11 | 2021-04-14 | Infineon Technologies Austria AG | Dispositif semi-conducteur avec une connexion de brasage par diffusion avec précipitations d'un composé intermétallique supplémentaire et procédé de fabrication correspondant |
CN113814504A (zh) * | 2021-09-03 | 2021-12-21 | 广州德芯半导体科技有限公司 | 一种非高温连接温度传感器的封装方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2547771A (en) * | 1950-03-29 | 1951-04-03 | Rca Corp | Solder composition |
US3460241A (en) * | 1967-06-21 | 1969-08-12 | Bendix Corp | Method of counting semiconductor devices on thick film circuits |
US3442010A (en) * | 1968-04-26 | 1969-05-06 | Gen Electric | Brazing method |
DE2228703A1 (de) * | 1972-06-13 | 1974-01-10 | Licentia Gmbh | Verfahren zum herstellen einer vorgegebenen lotschichtstaerke bei der fertigung von halbleiterbauelementen |
US4142203A (en) * | 1976-12-20 | 1979-02-27 | Avx Corporation | Method of assembling a hermetically sealed semiconductor unit |
US4219448A (en) * | 1978-06-08 | 1980-08-26 | Bernd Ross | Screenable contact structure and method for semiconductor devices |
US4356505A (en) * | 1978-08-04 | 1982-10-26 | Bell Telephone Laboratories, Incorporated | Conductive adhesive system including a conductivity enhancer |
US4311267A (en) * | 1979-05-04 | 1982-01-19 | Gte Automatic Electric Laboratories, Inc. | Method of screening paste solder onto leaded hybrid substrates |
-
1982
- 1982-11-24 US US06/444,267 patent/US4487638A/en not_active Expired - Lifetime
-
1983
- 1983-11-18 WO PCT/US1983/001804 patent/WO1984002097A1/fr unknown
- 1983-11-18 JP JP84500154A patent/JPS60500046A/ja active Pending
- 1983-11-23 CA CA000441783A patent/CA1200625A/fr not_active Expired
- 1983-11-23 EP EP83111694A patent/EP0110307B1/fr not_active Expired
- 1983-11-23 DE DE8383111694T patent/DE3380430D1/de not_active Expired
-
1985
- 1985-06-27 CA CA000485766A patent/CA1218764A/fr not_active Expired
-
1992
- 1992-07-07 SG SG708/92A patent/SG70892G/en unknown
- 1992-10-22 HK HK814/92A patent/HK81492A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPS60500046A (ja) | 1985-01-17 |
US4487638A (en) | 1984-12-11 |
HK81492A (en) | 1992-10-30 |
WO1984002097A1 (fr) | 1984-06-07 |
CA1218764A (fr) | 1987-03-03 |
DE3380430D1 (en) | 1989-09-21 |
EP0110307B1 (fr) | 1989-08-16 |
EP0110307A2 (fr) | 1984-06-13 |
EP0110307A3 (en) | 1985-12-04 |
CA1200625A (fr) | 1986-02-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3380430D1 (en) | Semiconductor die-attach technique and composition therefor | |
DE3476296D1 (en) | Semiconductor package | |
GB2134705B (en) | Semiconductor devices | |
DE3463873D1 (en) | Semiconductor devices | |
DE3476144D1 (en) | Semiconductor device | |
EP0117111A3 (en) | Semiconductor device assembly and package | |
GB8411094D0 (en) | Semiconductor | |
EP0138048A3 (en) | Press-packed semiconductor device | |
DE3480248D1 (en) | Semiconductor devices | |
GB8504426D0 (en) | Semicondutor device | |
EP0130591A3 (en) | Semiconductor device of resin-seal type | |
GB8522166D0 (en) | Encapsulating semiconductor components | |
GB8506111D0 (en) | Encapsulating semiconductor components | |
GB8400401D0 (en) | Semiconductor device | |
DE3465224D1 (en) | Semiconductor device | |
DE3469830D1 (en) | Semiconductor device | |
GB8300403D0 (en) | Semiconductor arrangement | |
DE3465553D1 (en) | Semiconductor device | |
DE3474613D1 (en) | Trench-defined semiconductor structure | |
GB8326677D0 (en) | Semiconductor structures | |
GB2139420B (en) | Semiconductor devices | |
GB8312281D0 (en) | Semiconductor devices | |
EP0118102A3 (en) | Semiconductor device | |
DE3469114D1 (en) | Semiconductor device | |
GB8318321D0 (en) | Semiconductor structure |