SG54491A1 - Method for production of soi substrate by pasting ans soi substrate - Google Patents
Method for production of soi substrate by pasting ans soi substrateInfo
- Publication number
- SG54491A1 SG54491A1 SG1997001065A SG1997001065A SG54491A1 SG 54491 A1 SG54491 A1 SG 54491A1 SG 1997001065 A SG1997001065 A SG 1997001065A SG 1997001065 A SG1997001065 A SG 1997001065A SG 54491 A1 SG54491 A1 SG 54491A1
- Authority
- SG
- Singapore
- Prior art keywords
- soi substrate
- ans
- pasting
- production
- soi
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/977—Thinning or removal of substrate
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8518796 | 1996-04-08 | ||
JP9079783A JPH09331049A (en) | 1996-04-08 | 1997-03-31 | Pasted soi substrate and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
SG54491A1 true SG54491A1 (en) | 1998-11-16 |
Family
ID=26420778
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG9904180A SG80064A1 (en) | 1996-04-08 | 1997-04-07 | Method for production of soi substrate by pasting and soi substrate |
SG1997001065A SG54491A1 (en) | 1996-04-08 | 1997-04-07 | Method for production of soi substrate by pasting ans soi substrate |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG9904180A SG80064A1 (en) | 1996-04-08 | 1997-04-07 | Method for production of soi substrate by pasting and soi substrate |
Country Status (8)
Country | Link |
---|---|
US (1) | US6156624A (en) |
EP (1) | EP0801420A3 (en) |
JP (1) | JPH09331049A (en) |
KR (1) | KR100235398B1 (en) |
CN (1) | CN1099699C (en) |
CA (1) | CA2202003C (en) |
SG (2) | SG80064A1 (en) |
TW (1) | TW337042B (en) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6534380B1 (en) * | 1997-07-18 | 2003-03-18 | Denso Corporation | Semiconductor substrate and method of manufacturing the same |
JP3847935B2 (en) * | 1998-01-09 | 2006-11-22 | キヤノン株式会社 | Method for removing porous region and method for manufacturing semiconductor substrate |
US6423614B1 (en) * | 1998-06-30 | 2002-07-23 | Intel Corporation | Method of delaminating a thin film using non-thermal techniques |
JP2000315635A (en) * | 1999-04-30 | 2000-11-14 | Mitsubishi Materials Silicon Corp | Silicon wafer for bonding and manufacture of bonded substrate using the same |
JP2001007362A (en) * | 1999-06-17 | 2001-01-12 | Canon Inc | Semiconductor substrate and manufacture of solar cell |
US6984571B1 (en) * | 1999-10-01 | 2006-01-10 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
US6902987B1 (en) * | 2000-02-16 | 2005-06-07 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
US20050226993A1 (en) * | 2000-10-03 | 2005-10-13 | Nawrocki Jesse G | Medical devices having durable and lubricious polymeric coating |
KR100418241B1 (en) * | 2001-03-23 | 2004-02-11 | 주영창 | Reversible Seal Package for Micro Electro Mechanical Systems |
JP4628580B2 (en) * | 2001-04-18 | 2011-02-09 | 信越半導体株式会社 | Manufacturing method of bonded substrate |
US7176528B2 (en) * | 2003-02-18 | 2007-02-13 | Corning Incorporated | Glass-based SOI structures |
FR2851846A1 (en) * | 2003-02-28 | 2004-09-03 | Canon Kk | CONNECTION SYSTEM AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE |
EP1620583A4 (en) * | 2003-05-06 | 2009-04-22 | Canon Kk | Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor |
JP2004335642A (en) * | 2003-05-06 | 2004-11-25 | Canon Inc | Substrate and its producing process |
US20050124137A1 (en) * | 2003-05-07 | 2005-06-09 | Canon Kabushiki Kaisha | Semiconductor substrate and manufacturing method therefor |
US7109092B2 (en) | 2003-05-19 | 2006-09-19 | Ziptronix, Inc. | Method of room temperature covalent bonding |
TWI242232B (en) * | 2003-06-09 | 2005-10-21 | Canon Kk | Semiconductor substrate, semiconductor device, and method of manufacturing the same |
JP2005005509A (en) * | 2003-06-12 | 2005-01-06 | Canon Inc | Thin film transistor and method of manufacturing the same |
US20050132332A1 (en) * | 2003-12-12 | 2005-06-16 | Abhay Sathe | Multi-location coordinated test apparatus |
US6992025B2 (en) * | 2004-01-12 | 2006-01-31 | Sharp Laboratories Of America, Inc. | Strained silicon on insulator from film transfer and relaxation by hydrogen implantation |
JP2005347302A (en) | 2004-05-31 | 2005-12-15 | Canon Inc | Manufacturing method of substrate |
JP4771510B2 (en) * | 2004-06-23 | 2011-09-14 | キヤノン株式会社 | Semiconductor layer manufacturing method and substrate manufacturing method |
US7495313B2 (en) * | 2004-07-22 | 2009-02-24 | Board Of Trustees Of The Leland Stanford Junior University | Germanium substrate-type materials and approach therefor |
US7422447B2 (en) * | 2004-08-19 | 2008-09-09 | Fci Americas Technology, Inc. | Electrical connector with stepped housing |
JP2006080314A (en) | 2004-09-09 | 2006-03-23 | Canon Inc | Manufacturing method of coupled substrate |
US7371662B2 (en) * | 2006-03-21 | 2008-05-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming a 3D interconnect and resulting structures |
US7790565B2 (en) * | 2006-04-21 | 2010-09-07 | Corning Incorporated | Semiconductor on glass insulator made using improved thinning process |
JP5171016B2 (en) | 2006-10-27 | 2013-03-27 | キヤノン株式会社 | Semiconductor member, manufacturing method of semiconductor article, and LED array using the manufacturing method |
JP2009094144A (en) * | 2007-10-04 | 2009-04-30 | Canon Inc | Method of manufacturing light emitting device |
JP2011523383A (en) * | 2008-05-23 | 2011-08-11 | 富士フイルム株式会社 | Method and apparatus for bonding substrates |
JP5796936B2 (en) * | 2010-06-01 | 2015-10-21 | キヤノン株式会社 | Method for producing porous glass |
CN103400890A (en) * | 2013-07-08 | 2013-11-20 | 浙江晶科能源有限公司 | Reworking technology for striping re-plating of crystal silicon solar cell PECVD (plasma enhanced chemical vapor deposition) chromatic aberration slice |
JP6447439B2 (en) * | 2015-09-28 | 2019-01-09 | 信越半導体株式会社 | Manufacturing method of bonded SOI wafer |
CN108604550B (en) * | 2016-11-25 | 2021-08-31 | 新电元工业株式会社 | Method for manufacturing semiconductor device and semiconductor device |
JP6558355B2 (en) * | 2016-12-19 | 2019-08-14 | 信越半導体株式会社 | Manufacturing method of SOI wafer |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5931990A (en) * | 1982-08-17 | 1984-02-21 | Canon Inc | Image forming device |
JPS5987481A (en) * | 1982-11-11 | 1984-05-21 | Konishiroku Photo Ind Co Ltd | Cleaning device of intermediate transfer body |
JPH0387895A (en) * | 1989-08-31 | 1991-04-12 | Canon Inc | Transfer type recording device |
JP2831745B2 (en) * | 1989-10-31 | 1998-12-02 | 富士通株式会社 | Semiconductor device and manufacturing method thereof |
JPH03171188A (en) * | 1989-11-30 | 1991-07-24 | Kanai Hiroyuki | Cleaning sheet |
JP2850502B2 (en) * | 1990-07-20 | 1999-01-27 | 富士通株式会社 | Method for manufacturing SOI substrate |
JPH0719739B2 (en) * | 1990-09-10 | 1995-03-06 | 信越半導体株式会社 | Bonded wafer manufacturing method |
JP3028509B2 (en) * | 1990-09-25 | 2000-04-04 | 株式会社リコー | Transfer device |
JP2996717B2 (en) * | 1990-11-18 | 2000-01-11 | 株式会社リコー | Cleaning device for transfer paper holding rotating body |
JPH04190385A (en) * | 1990-11-26 | 1992-07-08 | Fujitsu Ltd | Cleaning brush for electrophotographic recording device |
JP2567520B2 (en) * | 1990-11-30 | 1996-12-25 | 三田工業株式会社 | Image forming device |
JPH04234066A (en) * | 1990-12-28 | 1992-08-21 | Canon Inc | Image forming device |
JPH0521765A (en) * | 1991-07-11 | 1993-01-29 | Fujitsu Ltd | Manufacturing for semiconductor device |
JP3112106B2 (en) * | 1991-10-11 | 2000-11-27 | キヤノン株式会社 | Manufacturing method of semiconductor substrate |
JP2988551B2 (en) * | 1992-01-14 | 1999-12-13 | キヤノン株式会社 | Image forming device |
JP3237888B2 (en) * | 1992-01-31 | 2001-12-10 | キヤノン株式会社 | Semiconductor substrate and method of manufacturing the same |
JP3416163B2 (en) * | 1992-01-31 | 2003-06-16 | キヤノン株式会社 | Semiconductor substrate and manufacturing method thereof |
JPH05217822A (en) * | 1992-02-07 | 1993-08-27 | Fujitsu Ltd | Manufacture of silicon-on-insulator substrate |
US5441899A (en) * | 1992-02-18 | 1995-08-15 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing substrate having semiconductor on insulator |
KR100292330B1 (en) * | 1992-05-01 | 2001-09-17 | 이데이 노부유끼 | Semiconductor device, manufacturing method thereof, and method for manufacturing silicon on insulator(soi) substrate |
KR100289348B1 (en) * | 1992-05-25 | 2001-12-28 | 이데이 노부유끼 | Insulated board silicon semiconductor device and manufacturing method |
US5406364A (en) * | 1992-09-14 | 1995-04-11 | Canon Kabushiki Kaisha | Electrophotographic apparatus cleaning member and electrophotographic apparatus using the cleaning member |
JPH06244389A (en) * | 1992-12-25 | 1994-09-02 | Canon Inc | Manufacture of semiconductor substrate and semiconductor substrate manufactured by this method |
JP3644980B2 (en) * | 1993-09-06 | 2005-05-11 | 株式会社ルネサステクノロジ | Manufacturing method of semiconductor device |
TW330313B (en) * | 1993-12-28 | 1998-04-21 | Canon Kk | A semiconductor substrate and process for producing same |
JP3542376B2 (en) * | 1994-04-08 | 2004-07-14 | キヤノン株式会社 | Manufacturing method of semiconductor substrate |
DE69513469T2 (en) * | 1994-06-16 | 2000-07-06 | Nec Corp | Silicon on insulator substrate and its manufacturing process |
JP3265493B2 (en) * | 1994-11-24 | 2002-03-11 | ソニー株式会社 | Method for manufacturing SOI substrate |
-
1997
- 1997-03-31 JP JP9079783A patent/JPH09331049A/en not_active Withdrawn
- 1997-04-04 US US08/832,859 patent/US6156624A/en not_active Expired - Lifetime
- 1997-04-07 EP EP97302371A patent/EP0801420A3/en not_active Withdrawn
- 1997-04-07 CA CA002202003A patent/CA2202003C/en not_active Expired - Fee Related
- 1997-04-07 SG SG9904180A patent/SG80064A1/en unknown
- 1997-04-07 SG SG1997001065A patent/SG54491A1/en unknown
- 1997-04-08 TW TW086104449A patent/TW337042B/en not_active IP Right Cessation
- 1997-04-08 CN CN97111685A patent/CN1099699C/en not_active Expired - Fee Related
- 1997-04-08 KR KR1019970012860A patent/KR100235398B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
SG80064A1 (en) | 2001-04-17 |
EP0801420A3 (en) | 1998-05-20 |
EP0801420A2 (en) | 1997-10-15 |
CN1166049A (en) | 1997-11-26 |
CA2202003A1 (en) | 1997-10-08 |
KR100235398B1 (en) | 1999-12-15 |
CN1099699C (en) | 2003-01-22 |
CA2202003C (en) | 2001-02-20 |
TW337042B (en) | 1998-07-21 |
JPH09331049A (en) | 1997-12-22 |
US6156624A (en) | 2000-12-05 |
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