SG53145A1 - Coating of vacuum chambers to reduce pump down time and base pressure - Google Patents

Coating of vacuum chambers to reduce pump down time and base pressure

Info

Publication number
SG53145A1
SG53145A1 SG1998000230A SG1998000230A SG53145A1 SG 53145 A1 SG53145 A1 SG 53145A1 SG 1998000230 A SG1998000230 A SG 1998000230A SG 1998000230 A SG1998000230 A SG 1998000230A SG 53145 A1 SG53145 A1 SG 53145A1
Authority
SG
Singapore
Prior art keywords
coating
down time
vacuum chambers
base pressure
pump down
Prior art date
Application number
SG1998000230A
Other languages
English (en)
Inventor
Bingxi Sun
Imran Hashim
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG53145A1 publication Critical patent/SG53145A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
SG1998000230A 1997-02-06 1998-02-03 Coating of vacuum chambers to reduce pump down time and base pressure SG53145A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/796,171 US6217715B1 (en) 1997-02-06 1997-02-06 Coating of vacuum chambers to reduce pump down time and base pressure

Publications (1)

Publication Number Publication Date
SG53145A1 true SG53145A1 (en) 1998-09-28

Family

ID=25167510

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998000230A SG53145A1 (en) 1997-02-06 1998-02-03 Coating of vacuum chambers to reduce pump down time and base pressure

Country Status (6)

Country Link
US (1) US6217715B1 (fr)
EP (1) EP0859070B1 (fr)
JP (1) JPH10219434A (fr)
KR (1) KR19980071126A (fr)
DE (1) DE69801291T2 (fr)
SG (1) SG53145A1 (fr)

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KR20030090650A (ko) * 2001-02-26 2003-11-28 어낵시스 발처스 악티엔게젤샤프트 부품 제조 방법 및 진공 처리 시스템
KR100421292B1 (ko) * 2001-12-22 2004-03-09 동부전자 주식회사 금속막 증착설비용 타겟의 자연 산화막 제거방법
US6780787B2 (en) * 2002-03-21 2004-08-24 Lam Research Corporation Low contamination components for semiconductor processing apparatus and methods for making components
JP4923450B2 (ja) * 2005-07-01 2012-04-25 富士ゼロックス株式会社 バッチ処理支援装置および方法、プログラム
US20070012558A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Magnetron sputtering system for large-area substrates
US20070012663A1 (en) * 2005-07-13 2007-01-18 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070084720A1 (en) * 2005-07-13 2007-04-19 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070012559A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Method of improving magnetron sputtering of large-area substrates using a removable anode
US7596197B1 (en) * 2005-08-05 2009-09-29 The Regents Of The University Of California Gamma source for active interrogation
US20070051616A1 (en) * 2005-09-07 2007-03-08 Le Hienminh H Multizone magnetron assembly
US20070056850A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070056843A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US7588668B2 (en) 2005-09-13 2009-09-15 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
US8679301B2 (en) * 2007-08-01 2014-03-25 HGST Netherlands B.V. Repeatability for RF MgO TMR barrier layer process by implementing Ti pasting
US8025269B1 (en) 2007-10-16 2011-09-27 National Semiconductor Corporation Chamber lid lifting apparatus
US9920418B1 (en) 2010-09-27 2018-03-20 James Stabile Physical vapor deposition apparatus having a tapered chamber
DE102011088099A1 (de) * 2011-12-09 2013-06-13 Von Ardenne Anlagentechnik Gmbh Vakuumkammer und Verfahren zu deren Herstellung
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
CN102877027B (zh) * 2012-09-29 2014-02-05 沈阳拓荆科技有限公司 共用真空系统的双腔真空装载腔
US9617638B2 (en) 2014-07-30 2017-04-11 Lam Research Corporation Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
GB201420935D0 (en) * 2014-11-25 2015-01-07 Spts Technologies Ltd Plasma etching apparatus
US9508547B1 (en) * 2015-08-17 2016-11-29 Lam Research Corporation Composition-matched curtain gas mixtures for edge uniformity modulation in large-volume ALD reactors
US9738977B1 (en) 2016-06-17 2017-08-22 Lam Research Corporation Showerhead curtain gas method and system for film profile modulation
US11802340B2 (en) * 2016-12-12 2023-10-31 Applied Materials, Inc. UHV in-situ cryo-cool chamber
US10655212B2 (en) 2016-12-15 2020-05-19 Honeywell Internatonal Inc Sputter trap having multimodal particle size distribution

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
NL130959C (fr) * 1965-12-17
DE1765850A1 (de) * 1967-11-10 1971-10-28 Euratom Verfahren und Vorrichtung zum Aufbringen von duennen Schichten
JPS59190363A (ja) 1983-04-11 1984-10-29 Orient Watch Co Ltd 金属薄膜の形成方法
JPS59197566A (ja) 1983-04-21 1984-11-09 Seiko Instr & Electronics Ltd 超高真空装置用真空容器
JPH0314227A (ja) 1989-06-13 1991-01-22 Sharp Corp 半導体装置の製造方法
US5178739A (en) * 1990-10-31 1993-01-12 International Business Machines Corporation Apparatus for depositing material into high aspect ratio holes
US5232571A (en) * 1991-12-23 1993-08-03 Iowa State University Research Foundation, Inc. Aluminum nitride deposition using an AlN/Al sputter cycle technique
US5380414A (en) * 1993-06-11 1995-01-10 Applied Materials, Inc. Shield and collimator pasting deposition chamber with a wafer support periodically used as an acceptor
JPH0718433A (ja) 1993-06-30 1995-01-20 Kobe Steel Ltd Ｉｃｐスパッタリング処理装置
US5358615A (en) * 1993-10-04 1994-10-25 Motorola, Inc. Process for forming a sputter deposited metal film
JPH09111460A (ja) * 1995-10-11 1997-04-28 Anelva Corp チタン系導電性薄膜の作製方法

Also Published As

Publication number Publication date
JPH10219434A (ja) 1998-08-18
KR19980071126A (ko) 1998-10-26
EP0859070B1 (fr) 2001-08-08
DE69801291T2 (de) 2002-05-02
EP0859070A1 (fr) 1998-08-19
DE69801291D1 (de) 2001-09-13
US6217715B1 (en) 2001-04-17

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