US5623436A
(en)
*
|
1993-06-17 |
1997-04-22 |
Information Storage Devices |
Method and apparatus for adjustment and control of an iterative method of recording analog signals with on-chip trimming techniques
|
US5640031A
(en)
*
|
1993-09-30 |
1997-06-17 |
Keshtbod; Parviz |
Spacer flash cell process
|
US5479368A
(en)
*
|
1993-09-30 |
1995-12-26 |
Cirrus Logic, Inc. |
Spacer flash cell device with vertically oriented floating gate
|
US5440505A
(en)
*
|
1994-01-21 |
1995-08-08 |
Intel Corporation |
Method and circuitry for storing discrete amounts of charge in a single memory element
|
US5429513A
(en)
*
|
1994-02-10 |
1995-07-04 |
Diaz-Plaza; Ruth R. |
Interactive teaching apparatus and method for teaching graphemes, grapheme names, phonemes, and phonetics
|
RU2190260C2
(ru)
*
|
1994-06-02 |
2002-09-27 |
Интел Корпорейшн |
Считывающая схема для флэш-памяти с многоуровневыми ячейками
|
US5629890A
(en)
*
|
1994-09-14 |
1997-05-13 |
Information Storage Devices, Inc. |
Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method
|
US5694356A
(en)
*
|
1994-11-02 |
1997-12-02 |
Invoice Technology, Inc. |
High resolution analog storage EPROM and flash EPROM
|
WO1996026523A1
(en)
*
|
1995-02-23 |
1996-08-29 |
Information Storage Devices, Inc. |
An iterative method of recording analog signals
|
EP0830684B1
(en)
*
|
1995-06-07 |
2004-08-25 |
Macronix International Co., Ltd. |
Automatic programming algorithm for page mode flash memory with variable programming pulse height and pulse width
|
US5973956A
(en)
*
|
1995-07-31 |
1999-10-26 |
Information Storage Devices, Inc. |
Non-volatile electrically alterable semiconductor memory for analog and digital storage
|
US5631606A
(en)
*
|
1995-08-01 |
1997-05-20 |
Information Storage Devices, Inc. |
Fully differential output CMOS power amplifier
|
US5687114A
(en)
*
|
1995-10-06 |
1997-11-11 |
Agate Semiconductor, Inc. |
Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
|
US5815435A
(en)
*
|
1995-10-10 |
1998-09-29 |
Information Storage Devices, Inc. |
Storage cell for analog recording and playback
|
US5677869A
(en)
*
|
1995-12-14 |
1997-10-14 |
Intel Corporation |
Programming flash memory using strict ordering of states
|
US5729489A
(en)
*
|
1995-12-14 |
1998-03-17 |
Intel Corporation |
Programming flash memory using predictive learning methods
|
US5737265A
(en)
*
|
1995-12-14 |
1998-04-07 |
Intel Corporation |
Programming flash memory using data stream analysis
|
US5701266A
(en)
*
|
1995-12-14 |
1997-12-23 |
Intel Corporation |
Programming flash memory using distributed learning methods
|
US5680341A
(en)
*
|
1996-01-16 |
1997-10-21 |
Invoice Technology |
Pipelined record and playback for analog non-volatile memory
|
US5726934A
(en)
*
|
1996-04-09 |
1998-03-10 |
Information Storage Devices, Inc. |
Method and apparatus for analog reading values stored in floating gate structures
|
US5712815A
(en)
*
|
1996-04-22 |
1998-01-27 |
Advanced Micro Devices, Inc. |
Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells
|
EP0809256A3
(en)
*
|
1996-05-21 |
1999-04-14 |
Information Storage Devices, Inc. |
Method and circuit for linearized reading of analog floating gate storage cell
|
US5742543A
(en)
|
1996-08-19 |
1998-04-21 |
Intel Corporation |
Flash memory device having a page mode of operation
|
US5808506A
(en)
*
|
1996-10-01 |
1998-09-15 |
Information Storage Devices, Inc. |
MOS charge pump generation and regulation method and apparatus
|
US6487116B2
(en)
|
1997-03-06 |
2002-11-26 |
Silicon Storage Technology, Inc. |
Precision programming of nonvolatile memory cells
|
US5870335A
(en)
*
|
1997-03-06 |
1999-02-09 |
Agate Semiconductor, Inc. |
Precision programming of nonvolatile memory cells
|
US5828592A
(en)
*
|
1997-03-12 |
1998-10-27 |
Information Storage Devices, Inc. |
Analog signal recording and playback integrated circuit and message management system
|
US5898605A
(en)
*
|
1997-07-17 |
1999-04-27 |
Smarandoiu; George |
Apparatus and method for simplified analog signal record and playback
|
US5959892A
(en)
*
|
1997-08-26 |
1999-09-28 |
Macronix International Co., Ltd. |
Apparatus and method for programming virtual ground EPROM array cell without disturbing adjacent cells
|
US6178118B1
(en)
|
1997-08-26 |
2001-01-23 |
Macronix International Co., Ltd. |
Electrically programmable semiconductor device with multi-level wordline voltages for programming multi-level threshold voltages
|
US5877984A
(en)
*
|
1997-09-05 |
1999-03-02 |
Information Storage Devices, Inc. |
Method and apparatus for adjustment and control of an iterative method of recording analog signals with on chip selection of a voltage ramp amplitude
|
US5926409A
(en)
*
|
1997-09-05 |
1999-07-20 |
Information Storage Devices, Inc. |
Method and apparatus for an adaptive ramp amplitude controller in nonvolatile memory application
|
US6002620A
(en)
*
|
1998-01-09 |
1999-12-14 |
Information Storage Devices, Inc. |
Method and apparatus of column redundancy for non-volatile analog and multilevel memory
|
US5959883A
(en)
*
|
1998-01-09 |
1999-09-28 |
Information Storage Devices, Inc. |
Recording and playback integrated system for analog non-volatile flash memory
|
US5969986A
(en)
*
|
1998-06-23 |
1999-10-19 |
Invox Technology |
High-bandwidth read and write architectures for non-volatile memories
|
US6606267B2
(en)
*
|
1998-06-23 |
2003-08-12 |
Sandisk Corporation |
High data rate write process for non-volatile flash memories
|
EP0971361B1
(en)
|
1998-06-23 |
2003-12-10 |
SanDisk Corporation |
High data rate write process for non-volatile flash memories
|
US6208542B1
(en)
|
1998-06-30 |
2001-03-27 |
Sandisk Corporation |
Techniques for storing digital data in an analog or multilevel memory
|
US6282145B1
(en)
|
1999-01-14 |
2001-08-28 |
Silicon Storage Technology, Inc. |
Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
|
US6301161B1
(en)
|
2000-04-25 |
2001-10-09 |
Winbond Electronics Corporation |
Programming flash memory analog storage using coarse-and-fine sequence
|
US6396742B1
(en)
|
2000-07-28 |
2002-05-28 |
Silicon Storage Technology, Inc. |
Testing of multilevel semiconductor memory
|
US6301151B1
(en)
|
2000-08-09 |
2001-10-09 |
Information Storage Devices, Inc. |
Adaptive programming method and apparatus for flash memory analog storage
|
US6747892B2
(en)
|
2000-11-21 |
2004-06-08 |
Sandisk Corporation |
Sense amplifier for multilevel non-volatile integrated memory devices
|
US6738289B2
(en)
*
|
2001-02-26 |
2004-05-18 |
Sandisk Corporation |
Non-volatile memory with improved programming and method therefor
|
US6563733B2
(en)
*
|
2001-05-24 |
2003-05-13 |
Winbond Electronics Corporation |
Memory array architectures based on a triple-polysilicon source-side injection non-volatile memory cell
|
US6985372B1
(en)
|
2002-04-23 |
2006-01-10 |
Alta Analog, Inc. |
Analog content addressable memory (CAM) employing analog nonvolatile storage
|
US6888758B1
(en)
*
|
2004-01-21 |
2005-05-03 |
Sandisk Corporation |
Programming non-volatile memory
|
US7002843B2
(en)
*
|
2004-01-27 |
2006-02-21 |
Sandisk Corporation |
Variable current sinking for coarse/fine programming of non-volatile memory
|
US7139198B2
(en)
*
|
2004-01-27 |
2006-11-21 |
Sandisk Corporation |
Efficient verification for coarse/fine programming of non-volatile memory
|
US7068539B2
(en)
*
|
2004-01-27 |
2006-06-27 |
Sandisk Corporation |
Charge packet metering for coarse/fine programming of non-volatile memory
|
US6961279B2
(en)
*
|
2004-03-10 |
2005-11-01 |
Linear Technology Corporation |
Floating gate nonvolatile memory circuits and methods
|
US7023733B2
(en)
*
|
2004-05-05 |
2006-04-04 |
Sandisk Corporation |
Boosting to control programming of non-volatile memory
|
US7020026B2
(en)
*
|
2004-05-05 |
2006-03-28 |
Sandisk Corporation |
Bitline governed approach for program control of non-volatile memory
|
US20060072714A1
(en)
*
|
2004-09-24 |
2006-04-06 |
Sneidern Andreas V |
Integrated voice record and playback systems having indicator for the presence of new recorded audio messages
|
US7092290B2
(en)
*
|
2004-11-16 |
2006-08-15 |
Sandisk Corporation |
High speed programming system with reduced over programming
|
US7173859B2
(en)
*
|
2004-11-16 |
2007-02-06 |
Sandisk Corporation |
Faster programming of higher level states in multi-level cell flash memory
|
US20060187020A1
(en)
*
|
2005-02-23 |
2006-08-24 |
Denise Smithkovec-Chilton |
Personal message device
|
US7339834B2
(en)
*
|
2005-06-03 |
2008-03-04 |
Sandisk Corporation |
Starting program voltage shift with cycling of non-volatile memory
|
US7286406B2
(en)
*
|
2005-10-14 |
2007-10-23 |
Sandisk Corporation |
Method for controlled programming of non-volatile memory exhibiting bit line coupling
|
US7206235B1
(en)
|
2005-10-14 |
2007-04-17 |
Sandisk Corporation |
Apparatus for controlled programming of non-volatile memory exhibiting bit line coupling
|
US7330373B2
(en)
*
|
2006-03-28 |
2008-02-12 |
Sandisk Corporation |
Program time adjustment as function of program voltage for improved programming speed in memory system
|
WO2007126665A1
(en)
|
2006-04-12 |
2007-11-08 |
Sandisk Corporation |
Reducing the impact of program disturb during read
|
US7489549B2
(en)
*
|
2006-06-22 |
2009-02-10 |
Sandisk Corporation |
System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
|
US7486561B2
(en)
*
|
2006-06-22 |
2009-02-03 |
Sandisk Corporation |
Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages
|
ATE472803T1
(de)
*
|
2006-07-20 |
2010-07-15 |
Sandisk Corp |
Floating-gate-speicher mit kopplungskompensation während der programmierung
|
US7506113B2
(en)
*
|
2006-07-20 |
2009-03-17 |
Sandisk Corporation |
Method for configuring compensation
|
US7495953B2
(en)
*
|
2006-07-20 |
2009-02-24 |
Sandisk Corporation |
System for configuring compensation
|
US7443729B2
(en)
*
|
2006-07-20 |
2008-10-28 |
Sandisk Corporation |
System that compensates for coupling based on sensing a neighbor using coupling
|
US7885119B2
(en)
*
|
2006-07-20 |
2011-02-08 |
Sandisk Corporation |
Compensating for coupling during programming
|
US7400535B2
(en)
*
|
2006-07-20 |
2008-07-15 |
Sandisk Corporation |
System that compensates for coupling during programming
|
US7522454B2
(en)
*
|
2006-07-20 |
2009-04-21 |
Sandisk Corporation |
Compensating for coupling based on sensing a neighbor using coupling
|
US7474561B2
(en)
*
|
2006-10-10 |
2009-01-06 |
Sandisk Corporation |
Variable program voltage increment values in non-volatile memory program operations
|
US7450426B2
(en)
*
|
2006-10-10 |
2008-11-11 |
Sandisk Corporation |
Systems utilizing variable program voltage increment values in non-volatile memory program operations
|
US7570520B2
(en)
*
|
2006-12-27 |
2009-08-04 |
Sandisk Corporation |
Non-volatile storage system with initial programming voltage based on trial
|
US7551482B2
(en)
*
|
2006-12-27 |
2009-06-23 |
Sandisk Corporation |
Method for programming with initial programming voltage based on trial
|
US7508715B2
(en)
*
|
2007-07-03 |
2009-03-24 |
Sandisk Corporation |
Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
|
US7599224B2
(en)
*
|
2007-07-03 |
2009-10-06 |
Sandisk Corporation |
Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
|
US7898885B2
(en)
*
|
2007-07-19 |
2011-03-01 |
Micron Technology, Inc. |
Analog sensing of memory cells in a solid state memory device
|
US7782674B2
(en)
*
|
2007-10-18 |
2010-08-24 |
Micron Technology, Inc. |
Sensing of memory cells in NAND flash
|
US7768832B2
(en)
*
|
2008-04-07 |
2010-08-03 |
Micron Technology, Inc. |
Analog read and write paths in a solid state memory device
|
US7969235B2
(en)
*
|
2008-06-09 |
2011-06-28 |
Sandisk Corporation |
Self-adaptive multi-stage charge pump
|
US20110148509A1
(en)
*
|
2009-12-17 |
2011-06-23 |
Feng Pan |
Techniques to Reduce Charge Pump Overshoot
|
US9218883B2
(en)
|
2013-03-15 |
2015-12-22 |
West Virginia University |
Continuous-time floating gate memory cell programming
|
CA2911409C
(en)
*
|
2013-05-13 |
2021-03-02 |
Romeo Ilarian Ciuperca |
Insulated concrete battery mold, insulated passive concrete curing system, accelerated concrete curing apparatus and method of using same
|