SG44067A1 - High voltage silicon diode with optimum placement of silicon-germanium layers - Google Patents
High voltage silicon diode with optimum placement of silicon-germanium layersInfo
- Publication number
- SG44067A1 SG44067A1 SG1996011874A SG1996011874A SG44067A1 SG 44067 A1 SG44067 A1 SG 44067A1 SG 1996011874 A SG1996011874 A SG 1996011874A SG 1996011874 A SG1996011874 A SG 1996011874A SG 44067 A1 SG44067 A1 SG 44067A1
- Authority
- SG
- Singapore
- Prior art keywords
- silicon
- high voltage
- germanium layers
- optimum placement
- diode
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 title 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/580,071 US5640043A (en) | 1995-12-20 | 1995-12-20 | High voltage silicon diode with optimum placement of silicon-germanium layers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG44067A1 true SG44067A1 (en) | 1997-11-14 |
Family
ID=24319553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG1996011874A SG44067A1 (en) | 1995-12-20 | 1996-12-20 | High voltage silicon diode with optimum placement of silicon-germanium layers |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5640043A (ja) |
| EP (1) | EP0780910B1 (ja) |
| JP (1) | JP2919405B2 (ja) |
| DE (1) | DE69608651T2 (ja) |
| SG (1) | SG44067A1 (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3919815B2 (ja) * | 1995-06-07 | 2007-05-30 | バクスター インターナショナル インコーポレイテッド | ハロゲンを含まない、レトルト可能な多層バリアーフィルム |
| EP1008187B1 (en) * | 1998-04-09 | 2009-09-23 | Nxp B.V. | Semiconductor device having a rectifying junction and method of manufacturing same |
| US20020163059A1 (en) * | 2000-02-17 | 2002-11-07 | Hamerski Roman J. | Device with epitaxial base |
| US6462393B2 (en) | 2001-03-20 | 2002-10-08 | Fabtech, Inc. | Schottky device |
| US6797992B2 (en) * | 2001-08-07 | 2004-09-28 | Fabtech, Inc. | Apparatus and method for fabricating a high reverse voltage semiconductor device |
| US20040075160A1 (en) * | 2002-10-18 | 2004-04-22 | Jack Eng | Transient voltage suppressor having an epitaxial layer for higher avalanche voltage operation |
| CN104022161B (zh) * | 2014-06-09 | 2018-02-06 | 苏州市职业大学 | 一种双向瞬态电压抑制保护器件 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4826430A (ja) * | 1971-08-11 | 1973-04-07 | ||
| US3832246A (en) * | 1972-05-22 | 1974-08-27 | Bell Telephone Labor Inc | Methods for making avalanche diodes |
| US4255757A (en) * | 1978-12-05 | 1981-03-10 | International Rectifier Corporation | High reverse voltage semiconductor device with fast recovery time with central depression |
| US4740477A (en) * | 1985-10-04 | 1988-04-26 | General Instrument Corporation | Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics |
| US5097308A (en) * | 1990-03-13 | 1992-03-17 | General Instrument Corp. | Method for controlling the switching speed of bipolar power devices |
| US5102810A (en) * | 1990-03-13 | 1992-04-07 | General Instrument Corp. | Method for controlling the switching speed of bipolar power devices |
| US5342805A (en) * | 1993-07-01 | 1994-08-30 | G.I. Corporation | Method of growing a semiconductor material by epilaxy |
| US5298457A (en) * | 1993-07-01 | 1994-03-29 | G. I. Corporation | Method of making semiconductor devices using epitaxial techniques to form Si/Si-Ge interfaces and inverting the material |
| US5399901A (en) | 1994-04-20 | 1995-03-21 | General Instrument Corp. | Semiconductor devices having a mesa structure and method of fabrication for improved surface voltage breakdown characteristics |
-
1995
- 1995-12-20 US US08/580,071 patent/US5640043A/en not_active Expired - Lifetime
-
1996
- 1996-12-18 DE DE69608651T patent/DE69608651T2/de not_active Expired - Fee Related
- 1996-12-18 EP EP96309244A patent/EP0780910B1/en not_active Expired - Lifetime
- 1996-12-20 SG SG1996011874A patent/SG44067A1/en unknown
- 1996-12-20 JP JP8341088A patent/JP2919405B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69608651T2 (de) | 2000-09-21 |
| EP0780910A1 (en) | 1997-06-25 |
| JP2919405B2 (ja) | 1999-07-12 |
| JPH09199734A (ja) | 1997-07-31 |
| US5640043A (en) | 1997-06-17 |
| EP0780910B1 (en) | 2000-05-31 |
| DE69608651D1 (de) | 2000-07-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB9513420D0 (en) | Power semiconductor devices | |
| EP0741412A3 (en) | Semiconductor device with high protection capacity against high voltages | |
| EP0702411A3 (en) | Semiconductor device with high breakdown voltage and with a buried MOS gate structure | |
| AU7678894A (en) | Silicon carbide field effect device | |
| AU697634B2 (en) | Thermoplastic elastomers having improved high temperature performance | |
| AU6654198A (en) | Optoelectronic semiconductor diodes and devices comprising same | |
| EP0702404A3 (en) | Semiconductor device | |
| DE69627086D1 (de) | Wellenlängenselektive Bauteile mit SOI-Halbleiter | |
| AU4716297A (en) | Optoelectronic semiconductor devices | |
| AU1163399A (en) | Method of semiconductor device fabrication | |
| AU5659996A (en) | Semiconductor device | |
| AU3819995A (en) | Injection of encapsulating material on an optocomponent | |
| AU1816699A (en) | Internal cmos reference generator and voltage regulator | |
| EP0776092A3 (en) | Semiconductor device | |
| DE69616251D1 (de) | Halbleiteranordnung mit Halbleiterleistungselementen | |
| SG55025A1 (en) | Low cost method of fabricating epitaxial semiconductor devices | |
| EP0714129A3 (de) | Halbleiterbauelement | |
| SG72844A1 (en) | Group III-V compound semiconductor and light-emitting device | |
| EP0882323A3 (fr) | Dispositif de redressement de tension a composants integres | |
| ZA9810938B (en) | High voltage induction device | |
| GB2301934B (en) | Minority carrier semiconductor devices with improved stability | |
| AU4521393A (en) | Yieldable power-transmitting element | |
| AU3393493A (en) | Semiconductor device | |
| EP0779662A3 (en) | Semiconductor device with bipolar structure and method of fabricating the same | |
| EP0740406A3 (en) | Switching semiconductor device |