SG28390G - A semiconductor substrate having a superconducting thin film - Google Patents

A semiconductor substrate having a superconducting thin film

Info

Publication number
SG28390G
SG28390G SG1995906426A SG1995906426A SG28390G SG 28390 G SG28390 G SG 28390G SG 1995906426 A SG1995906426 A SG 1995906426A SG 1995906426 A SG1995906426 A SG 1995906426A SG 28390 G SG28390 G SG 28390G
Authority
SG
Singapore
Prior art keywords
thin film
semiconductor substrate
superconducting thin
superconducting
semiconductor
Prior art date
Application number
SG1995906426A
Other languages
English (en)
Inventor
Hideo Itozaki
Keizo Harada
Naoji Fujimori
Shuji Yazu
Tetsuji Jodai
Original Assignee
Sumitomo Electric Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62328472A external-priority patent/JPH01170058A/ja
Priority claimed from JP62328476A external-priority patent/JPH01170062A/ja
Priority claimed from JP62328481A external-priority patent/JPH01170067A/ja
Priority claimed from JP62328480A external-priority patent/JPH01170066A/ja
Priority claimed from JP62328478A external-priority patent/JPH01170064A/ja
Priority claimed from JP62328477A external-priority patent/JPH01170063A/ja
Priority claimed from JP62328471A external-priority patent/JPH01170057A/ja
Priority claimed from JP62328482A external-priority patent/JPH01170068A/ja
Priority claimed from JP62328475A external-priority patent/JPH01170061A/ja
Priority claimed from JP62328474A external-priority patent/JPH01170060A/ja
Priority claimed from JP62328473A external-priority patent/JPH01170059A/ja
Priority claimed from JP62328479A external-priority patent/JPH01170065A/ja
Application filed by Sumitomo Electric Industries filed Critical Sumitomo Electric Industries
Publication of SG28390G publication Critical patent/SG28390G/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32058—Deposition of superconductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76891—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by using superconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53285—Conductive materials containing superconducting materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H10N60/0716—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
SG1995906426A 1987-12-25 1988-12-26 A semiconductor substrate having a superconducting thin film SG28390G (en)

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
JP62328481A JPH01170067A (ja) 1987-12-25 1987-12-25 超電導体層を有する半導体基板
JP62328480A JPH01170066A (ja) 1987-12-25 1987-12-25 超電導体層を有する半導体基板
JP62328478A JPH01170064A (ja) 1987-12-25 1987-12-25 超電導体層を有する半導体基板
JP62328477A JPH01170063A (ja) 1987-12-25 1987-12-25 超電導体層を有する半導体基板
JP62328472A JPH01170058A (ja) 1987-12-25 1987-12-25 超電導体層を有する半導体基板
JP62328473A JPH01170059A (ja) 1987-12-25 1987-12-25 超電導体層を有する半導体基板
JP62328476A JPH01170062A (ja) 1987-12-25 1987-12-25 超電導体層を有する半導体基板
JP62328474A JPH01170060A (ja) 1987-12-25 1987-12-25 超電導体層を有する半導体基板
JP62328475A JPH01170061A (ja) 1987-12-25 1987-12-25 超電導体層を有する半導体基板
JP62328479A JPH01170065A (ja) 1987-12-25 1987-12-25 超電導体層を有する半導体基板
JP62328482A JPH01170068A (ja) 1987-12-25 1987-12-25 超電導体層を有する半導体基板
JP62328471A JPH01170057A (ja) 1987-12-25 1987-12-25 超電導体層を有する半導体基板

Publications (1)

Publication Number Publication Date
SG28390G true SG28390G (en) 1995-09-01

Family

ID=27583546

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1995906426A SG28390G (en) 1987-12-25 1988-12-26 A semiconductor substrate having a superconducting thin film

Country Status (4)

Country Link
EP (1) EP0323342B1 (xx)
DE (1) DE3850084T2 (xx)
HK (1) HK73895A (xx)
SG (1) SG28390G (xx)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8801032A (nl) * 1988-04-21 1989-11-16 Philips Nv Inrichting en werkwijze voor het vervaardigen van een inrichting.
US5256897A (en) * 1988-11-28 1993-10-26 Hitachi, Ltd. Oxide superconducting device
DE3903432C1 (en) * 1989-02-06 1990-04-26 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt, De Method for fabricating a component containing a superconductor and a semiconductor
JPH06302872A (ja) * 1993-04-14 1994-10-28 Sumitomo Electric Ind Ltd 酸化物超電導薄膜上に上層の薄膜を積層する方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0282012A3 (en) * 1987-03-09 1989-09-13 Semiconductor Energy Laboratory Co., Ltd. Superconducting semiconductor device

Also Published As

Publication number Publication date
HK73895A (en) 1995-05-19
DE3850084D1 (de) 1994-07-14
EP0323342B1 (en) 1994-06-08
EP0323342A2 (en) 1989-07-05
DE3850084T2 (de) 1995-01-19
EP0323342A3 (en) 1989-08-23

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