SG2013075437A - Faraday shield having plasma density decouplingstructure between tcp coil zones - Google Patents
Faraday shield having plasma density decouplingstructure between tcp coil zonesInfo
- Publication number
- SG2013075437A SG2013075437A SG2013075437A SG2013075437A SG2013075437A SG 2013075437 A SG2013075437 A SG 2013075437A SG 2013075437 A SG2013075437 A SG 2013075437A SG 2013075437 A SG2013075437 A SG 2013075437A SG 2013075437 A SG2013075437 A SG 2013075437A
- Authority
- SG
- Singapore
- Prior art keywords
- decouplingstructure
- plasma density
- faraday shield
- tcp coil
- coil zones
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/658,652 US9293353B2 (en) | 2011-04-28 | 2012-10-23 | Faraday shield having plasma density decoupling structure between TCP coil zones |
Publications (1)
Publication Number | Publication Date |
---|---|
SG2013075437A true SG2013075437A (en) | 2014-05-29 |
Family
ID=50885369
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG2013075437A SG2013075437A (en) | 2012-10-23 | 2013-10-03 | Faraday shield having plasma density decouplingstructure between tcp coil zones |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR102266590B1 (ko) |
SG (1) | SG2013075437A (ko) |
TW (1) | TWI515761B (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB201502453D0 (en) * | 2015-02-13 | 2015-04-01 | Spts Technologies Ltd | Plasma producing apparatus |
KR102189337B1 (ko) * | 2019-07-17 | 2020-12-09 | 주식회사 유진테크 | 플라즈마 처리 장치 |
CN110416053B (zh) * | 2019-07-30 | 2021-03-16 | 江苏鲁汶仪器有限公司 | 一种电感耦合等离子体处理系统 |
CN110491760B (zh) * | 2019-08-23 | 2020-09-15 | 江苏鲁汶仪器有限公司 | 一种法拉第清洗装置及等离子体处理系统 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6033585A (en) * | 1996-12-20 | 2000-03-07 | Lam Research Corporation | Method and apparatus for preventing lightup of gas distribution holes |
US6523493B1 (en) * | 2000-08-01 | 2003-02-25 | Tokyo Electron Limited | Ring-shaped high-density plasma source and method |
JP2003033647A (ja) * | 2001-07-23 | 2003-02-04 | Tokyo Ohka Kogyo Co Ltd | プラズマ処理装置 |
US6946054B2 (en) * | 2002-02-22 | 2005-09-20 | Tokyo Electron Limited | Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing |
US7829469B2 (en) * | 2006-12-11 | 2010-11-09 | Tokyo Electron Limited | Method and system for uniformity control in ballistic electron beam enhanced plasma processing system |
JP5656458B2 (ja) * | 2010-06-02 | 2015-01-21 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
-
2013
- 2013-10-03 SG SG2013075437A patent/SG2013075437A/en unknown
- 2013-10-22 TW TW102138117A patent/TWI515761B/zh active
- 2013-10-23 KR KR1020130126832A patent/KR102266590B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TW201432777A (zh) | 2014-08-16 |
KR102266590B1 (ko) | 2021-06-18 |
KR20140051806A (ko) | 2014-05-02 |
TWI515761B (zh) | 2016-01-01 |
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