SG195006A1 - Exhausting method, exhausting apparatus and substrate processing device - Google Patents
Exhausting method, exhausting apparatus and substrate processing device Download PDFInfo
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- SG195006A1 SG195006A1 SG2013084991A SG2013084991A SG195006A1 SG 195006 A1 SG195006 A1 SG 195006A1 SG 2013084991 A SG2013084991 A SG 2013084991A SG 2013084991 A SG2013084991 A SG 2013084991A SG 195006 A1 SG195006 A1 SG 195006A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 158
- 238000012545 processing Methods 0.000 title claims abstract description 129
- 238000000034 method Methods 0.000 title claims abstract description 85
- 238000000605 extraction Methods 0.000 claims description 41
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 230
- 230000008569 process Effects 0.000 description 41
- 238000009826 distribution Methods 0.000 description 22
- 238000005192 partition Methods 0.000 description 15
- 230000001276 controlling effect Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 230000000875 corresponding effect Effects 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000002596 correlated effect Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 238000004590 computer program Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- Chemical Vapour Deposition (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
An exhausting method, an exhausting apparatus and a substrate processing device. The exhausting method comprises the following steps: (1) setting at least two exhausting ports for a substrate processing chamber, and enabling the exhausting rates of the exhausting ports to be separately controlled; and (2) enabling the exhausting ports to exhaust outward at different exhausting rates. The exhausting apparatus comprises at least two exhausting ports connected to a substrate processing chamber. The exhausting rates of the exhausting ports may be separately controlled. The substrate processing device comprises a substrate processing chamber and the exhausting apparatus.
Description
EXHAUST METHOD, EXHAUST DEVICE AND SUBSTRATE PROCESSING
APPARATUS
The present invention relates to the technical field of microelectronics processing technology, and particularly relates to an exhaust method, an exhaust device and a substrate processing apparatus using the above exhaust method or the above exhaust device.
During the manufacturing procedure of microelectronic products, it is required to perform various thin film preparation processes on the surface of the substrate. Wherein, a commonly used chemical vapor deposition (CVD) process is of a thin film preparation method which makes use of the chemical reaction between process gases to form a desired film on the surface of the substrate. Such a process can be used to prepare films with a variety of characteristics and uses, such as a crystalline film, an amorphous film, an insulating film, a conductive film and a protection film.
In the CVD process, uniformity of the prepared film is directly dependent on whether the process gas contacts the substrate fully and uniformly.
Currently, the commonly used CVD apparatus mainly uses one gas supply port and one exhaust port to import the process gas into the chamber via the gas supply port to participate into a corresponding chemical reaction and export the by-produces after the reaction and the process gas which doesn't fully react via the exhaust port, to thereby form a stable distribution of gas flow field inside the chamber. However, gas flow formed in such a gas supplying and exhausting solution is relatively unchanged so that stronger gas flow passes through some regions inside the chamber (such as regions close fo the gas supplying port and the exhaust port inside the chamber), and a relatively ample gas flow cannot always be obtained in other regions. The above un-uniform distribution of the process gas flow will in turn result in uniformity of the CVD process results.
To this end, one Japanese patent document: JPA No. 1984-3489738 discloses a CVD apparatus, which uses a complex substrate holding part and a complex partition plate device for guiding gas flow so as to enhance uniformity of the distribution of the process gas inside the chamber. However, since the substrate holding part and the partition plate device of the above 5s technical solution are of complex structures, thin films attached on the complex structures are apt to peel off to result in particle contamination. Moreover, the design solution of the above partition plate device is highly correlated with the chamber volume, and if the same partition plate device is installed in substrate processing chambers with different volumes, the resultant effects of gas distribution will differ much; thus, when applied to a substrate processing apparatus with a large volume, the partition plate device needs to be designed and manufactured newly, which will increase design cost and manufacturing cost of the apparatus to a certain degree.
In view of above, how to provide an exhaust method, which can make the process gas distributed uniformly at various regions inside the chamber, is a technical problem to be solved for persons skilled in the art.
In order to solve the above problem, the present invention provides an exhaust method, which can make process gas distributed uniformly at various regions in a substrate processing chamber to provide uniformity of process results and can also be applied to a large scale apparatus.
In order to solve the above problem, the present invention provides an exhaust device, which can also make process gas distributed uniformly at various regions in a substrate processing chamber to provide uniformity of process results and can also be applied to a large scale apparatus.
In order to solve the above problem, the present invention also provides a substrate processing apparatus applying the above exhaust method or device, which can also make process gas distributed uniformly at various regions in a substrate processing chamber to provide uniformity of process results and it does not need to design the exhaust solution newly when an apparatus needs to be transformed to be a large scale one.
To this end, the present invention provides an exhaust method, for cooperating with a substrate processing chamber to exhaust gas, the exhaust method includes: step 10) providing the substrate processing chamber with at least two exhaust ports and enabling exhaust speed of the respective exhaust ports to be controlled individually, and step 20) enabling the at least two exhaust ports to exhaust gas outwards at different exhaust speed.
Wherein, in the step 20), enabling exhaust speed of the respective exhaust ports to vary with time.
Wherein, in the step 10), the number of the exhaust ports is at least three.
Wherein, in the step 20), enabling the exhaust speed of at least one exhaust port of the at least three exhaust ports to be larger than that of the other exhaust ports among the at least three exhaust ports.
Wherein, in the step 20), enabling the exhaust speed of one exhaust port to be larger than that of other exhaust ports among the at least three exhaust ports and enabling exhaust speed of the other exhaust ports to be identical with each other.
Wherein, in the step 20), enabling the exhaust speed of one exhaust port : to be larger than that of the other exhaust ports; and at the same time setting exhaust speed of the other exhaust ports so that the larger the distance of an exhaust port from the exhaust port of which the exhaust speed is largest is, the smaller the exhaust speed thereof is.
Wherein, in the step 20), enabling the respective exhaust ports to successively achieve the largest exhaust speed in the order of the respective exhaust ports arranged in a clockwise or counterciockwise direction.
Wherein, in the step 20), enabling the exhaust speed of the respective exhaust ports to vary continuously; or enabling the exhaust speed of the respective exhaust speed to vary once every predetermined period of time,
Wherein, the predetermined period of time is a constant or a variable.
In addition, the present invention also provides an exhaust device, for cooperating with a substrate processing chamber to exhaust gas, and the exhaust device includes at least two exhaust ports connected to the substrate processing chamber, wherein the exhaust speed of the respective exhaust ports can be controlled individually.
Wherein, the number of the exhaust ports is at least three.
Wherein, gas flow speed per unit area and/or exhaust cross-sectional area of the respective exhaust ports are adjustable, and exhaust speed of the respective exhaust ports are adjusted by respectively adjusting gas flow speed per unit area and/or exhaust cross-sectional area of the respective exhaust ports,
Wherein, the respective exhaust ports are connected to respective dedicated gas extraction devices respectively, and the exhaust speed of the respective exhaust ports are adjusted by adjusting gas extraction speed of the respective gas extraction devices.
Wherein, the respective exhaust ports are connected to the same gas extraction device via individual exhaust pipes, each of the exhaust pipes is provided with a cross section adjusting valve and the exhaust cross-sectional area of the respective exhaust ports are adjusted by adjusting the cross section adjusting valves provided in the respective exhaust pipes so as to adjust exhaust speed of the respective exhaust ports.
Wherein, the respective exhaust ports are connected to respective dedicated gas extraction devices via individual exhaust pipes, and each of the exhaust pipes is provided with a cross section adjusting valve; gas flow speed per unit area and/or exhaust cross-sectional area of the respective exhaust ports are adjusted by controlling the gas extraction speed of the respective gas extraction devices and/or adjusting the cross section adjusting valves so as to adjust the exhaust speed of the respective exhaust ports.
Wherein, the exhaust device further includes an exhaust speed controlling module, for controlling the respective exhaust ports to exhaust gas outwards at different exhaust speed and enabling the exhausting speed of the respective ports to vary with time.
Wherein, the exhaust speed controlling module controls the exhaust speed of the respective exhaust ports to be largest successively in a clockwise or counterclockwise direction. wherein, the cross section adjusting valve includes one gas outlet, at least three dispersedly arranged gas inlets and a rotatable vaive core provided inside the cross section adjusting valve; wherein the gas outlet is connected to one gas extraction device, and the at least three gas inlets are correspondingly connected to the respective exhaust ports; the rotatable valve core is used to enable gas inlet speed of the at least three gas inlets to rotate with time in a clockwise or counterclockwise direction (i.e. enable gas inlet speed of the at least three gas inlets to gradually vary with time along the clockwise or counterclockwise direction) to accordingly vary the exhaust speed of the exhaust ports correspondingly connected to the respective gas inlets.
Wherein, the exhaust device further includes a valve core driving part, for driving the valve core to rotate at a predetermined speed along a predetermined rotation direction.
In addition, the present invention also provides a substrate processing apparatus, including a substrate processing chamber and a substrate holding part provided inside the substrate processing chamber, and further including the above exhaust device provided by the present invention for forming - uniformly distributed gas flow over substrates.
Wherein, the substrate holding part includes at least two layers of trays arranged along the height direction of the substrate processing chamber; inside the substrate processing chamber, gas supply channels and exhaust channels corresponding to positions of the respective layers of trays are provided and the exhaust device is connected to the exhaust channels.
Wherein, the gas supply channels are arranged along the central axis of the substrate processing chamber, and accordingly, the exhaust channels are arranged around the substrate processing chamber.
Wherein, the gas supply channels are arranged around the substrate processing chamber, and accordingly, the exhaust channels are arranged along the central axis of the substrate processing chamber.
Wherein, the substrate processing apparatus is a metal-organic chemical vapor deposition apparatus.
The present invention achieves the following technical effects:
The exhaust method provided by the present invention includes: providing the substrate processing chamber with at least two exhaust ports of which the exhaust speed can be controlled individually; making the respective exhaust ports to exhaust gas outwards at different exhaust speed. So it can be seen that, when an exhaust operation is performed using the exhaust method provided by the present invention, at least two exhaust ports are simultaneously used to exhaust gas and the exhaust speed of the respective exhaust ports are adjusted at any time according to actual gas flow distribution.
So, the exhaust method provided by the present invention is used to make process gas distributed more uniformly at various regions in the entire substrate processing chamber, so that an ample supply of process gas can be obtained at various regions in the chamber and can in turn increase uniformity of the substrate processing process efficiently. Moreover, when the above exhaust method provided by the present invention is used to exhaust gas, itis not directly correlated with the volume of the substrate processing chamber and it is also not required to make any change on structure of the substrate processing chamber or install a complex partition plate device inside the substrate processing chamber; therefore, when the exhaust method provided by the present invention is applied to a large scale substrate processing apparatus, uniformity of process gas distribution can also be achieved efficiently.
The exhaust device provided by the present invention performs exhausting operation by means of at least two exhaust ports provided in the substrate processing chamber so that the process gas inside the chamber are distributed along a plurality of gas flow directions; and achieves adjustment of gas flow distribution through individually controlling the exhaust speed of the respective exhaust ports so that an ample supply of gas flow is achieved at various regions in the chamber. Thus, when the exhaust device provided by the present invention is used to exhaust gas, the process gas can be distributed more uniformly in the internal space of the entire substrate processing chamber, so as to increase the uniformity of the substrate processing process efficiently. Moreover, when the exhaust device provided by the present invention is used to exhaust gas, it is not directly correlated with the volume of the substrate processing chamber and it is also not required to make any change on structure of the substrate processing chamber or install a complex partition plate device inside the substrate processing chamber; therefore, when the exhaust device provided by the present invention is applied to a large scale substrate processing apparatus, uniformity of process gas distribution can also be achieved efficiently and uniformity of the process results can in turn be increased.
The substrate processing apparatus provided by the present invention includes a substrate processing chamber, and performs the exhausting operation for the substrate processing chamber by means of the above exhaust method provided by the present invention or the above exhaust device provided by the present invention. Therefore, the substrate processing apparatus provided by the present invention can also form uniform distribution of gas flow above substrates, and can in turn achieve uniform processed substrates, moreover, the substrate processing apparatus provided by the present invention can also apply the same exhaust design solution when a large scale design such as extending volume is performed.
Fig.1 is a flow chart of an exhaust method according to the present invention; : Fig.2 is a schematic structural view of a substrate processing chamber applying the exhaust method according to the present invention,
Fig.3 is a principal block diagram of an exhaust device according to a first embodiment of the present invention,
Fig.4 is a schematic structural view of the apparatus according to the embodiment illustrated in Fig.3,
Fig. 5 is a principal block diagram of an exhaust device according to a second embodiment of the present invention;
Fig.6 is a principal block diagram of an exhaust device according to a third embodiment of the present invention;
Fig.7 is a principal block diagram of an exhaust device according to a : fourth embodiment of the present invention;
Fig.8 is a cross-sectional view of a first cross section adjusting valve applied in the exhaust device according to the present invention;
Fig.9 is a cross-sectional view of a second cross section adjusting valve applied in the exhaust device according to the present invention;
Fig.10 is a cross-sectional view of a third cross section adjusting valve applied in the exhaust device according to the present invention;
Fig.11 is a schematic view of a structure of the substrate processing apparatus according to the present invention;
Fig.12 is a schematic structural view of a substrate processing apparatus s according to one embodiment of the present invention; and
Fig. 13 is a cross-sectional view of a substrate processing chamber provided with a plurality of layers of trays applied in the substrate processing apparatus according to the present invention.
In order to make persons skilled in the art better understand the technical solutions of the present invention, the exhaust method, the exhaust device and the substrate processing apparatus provided by the present invention will be described in detail in conjunction with the accompanying figures below.
The exhaust method provided by the present invention is used to exhaust gas in cooperation with the substrate processing chamber. Referring to Fig.1, the flow chart of the exhaust method provided by the present invention is iNustrated.
The exhaust method includes steps: 10) providing the substrate processing chamber with at least two exhaust ports and enabling exhaust speed of the respective exhaust ports to be controlled individually; 20) enabling the at least two exhaust ports to exhaust gas outwards at different exhaust speed. In this way, through the above at least two exhaust ports of which the exhaust speed can be controlled individually, a plurality of gas flow directions can be formed inside the substrate processing chamber, moreover, since the exhaust speed of the respective exhaust ports can be controlled individually, the exhaust speed of a certain exhaust port can be increased or decreased based on the processed substrates in an actual process, so as to change rate of the gas flow formed at the exhaust port, to increase or decrease gas supplying amount obtained by the substrates in this gas flow path, and eventually obtain relatively uniform processed substrates. Base on the above advantages, when the exhaust method provided by the present invention is used to exhaust gas, it is not required to provide a complex partition plate mechanism, thus avoiding the problem of particle contamination resulted from the partition plate mechanism efficiently. In addition, for substrate processing chambers of various volumes, the exhaust method provided by the present invention can be used to exhaust gas and a relatively uniform gas flow distribution can also be achieved in the respective substrate processing chambers.
In some embodiments, in order to achieve more uniform gas flow distribution, in the step 20), the exhaust speed of the respective exhaust ports can be varied with time. In this way, a dynamic gas flow distribution can be formed inside the chamber and the dynamic gas flow distribution may present a gas flow distribution along at least two directions inside the chamber and changing in strength with time; or present a gas flow distribution in any direction randomly occurring in the chamber; and preferably, present a gas flow distribution which rotates in a clockwise or counterclockwise direction in the chamber, and so on. As for the detail, please refer to the following embodiments.
In step 10) of an exhaust method according to an embodiment of the present invention, the substrate processing chamber has at least three exhaust ports. Normally, the above at least three exhaust ports are dispersedly arranged at different locations in the chamber, and in order to make the process gas uniformly distributed in the chamber, gas flow formed by the respective exhaust ports should cover all regions in the substrate processing chamber to the greatest extent.
In step 20) of the present embodiment, the exhaust speed of at least one exhaust port among the above at least three exhaust ports is larger than that of the others, and exhaust speed of the respective exhaust ports vary with time.
In this way, a rotatable gas flow can be formed in the substrate processing chamber, thus obtaining a relatively uniform process gas distribution along the circumferential and radial directions of the substrates.
Please referring to Fig.2, the schematic structural view of the substrate processing chamber applying the exhaust method provided by the present invention is illustrated. As shown in Fig.2, four exhaust ports (36-1, 36-2, 36-3 and 36-4) are provided around the substrate processing chamber and a gas supply port 23 is located at the center of the chamber. During a process, the exhaust speed of one exhaust port among the four exhaust ports (36-1, 36-2, 36-3 and 36-4) is made to be largest (the exhaust speed is represented by E in the Figure) and the exhaust speed of the other three exhaust ports are made to be approximately identical with each other; and the above largest exhaust speed E1 is made to move according to a specific rule among the respective exhaust ports, that is, the exhaust speed of one of the four exhaust ports (36-1, 36-2, 36-3 and 36-4) is made to be largest according to the specific rule, to form a dynamic gas flow distribution. it is easy to understand that, as an extreme condition of the present embodiment, the exhaust speed of the other three exhaust ports may be made to be zero.
Of course, in a practical application, it is also possible to make the exhaust speed of one exhaust port larger than that of the others and at the same time set the exhaust speed of the other exhaust ports according to the following rule: 1s the exhaust speed of an exhaust port is set according to a distance of this exhaust port from the above exhaust port with the largest exhaust speed, in particular, the larger the distance of this exhaust port from the exhaust port with the largest exhaust speed is, the smaller the exhaust speed of an exhaust port is. That is to say, the exhaust speed of the respective exhaust ports are gradually decreased from the above exhaust port with the largest exhaust speed, to make the gas flow vary as a whole and more smoothly, and eventually obtain more uniform processed substrates.
It is easy to understand that, after the exhaust speed of the respective exhaust ports have been set, the respective exhaust ports can successively obtain the largest exhaust speed in the order in a clockwise or counterclockwise direction, to form a rotatable gas flow in the substrate processing chamber and in turn achieve more uniform process results. In particular, for example, the following method can be used to obtain the above rotatable gas flow: the above rotatable gas flow is formed by making exhaust speed of the respective exhaust ports continuously vary in the order in a clockwise or counterclockwise direction: or, the above rotatable gas flow is formed by making exhaust speed of the respective exhaust ports vary once every a predetermined period of time in the order in a clockwise or counterclockwise direction. Wherein, the above predetermined period of time may be a constant or a variable so that the above rotatable gas flow may rotate at a constant speed, a variable speed or a variable acceleration. When the above predetermined period of time is a constant, a gas flow varying at a constant speed is formed in the substrate processing chamber; when the above predetermined period of time is a variable varying with time, a gas flow moving at a variable speed or at a variable acceleration is formed in the substrate processing chamber. In a practical process, particular parameters such as the predetermined period of time and the exhaust speed can be flexibly set according to requirements of the practical process or experimental measurement and can be adjusted at any time.
It should be pointed out that, the above respective embodiments are just illustrative or preferable embodiments of the exhaust method provided by the present invention, and persons skilled in the art can make various modifications to and improvements on the respective steps of the method based on the above embodiments. For example, the exhaust speed of the respective exhaust ports may vary with time randomly or in a step fashion; in summary, all the technical solutions which can generate a dynamic gas flow distribution in the substrate processing chamber and are made based on the spirit and substance of the present invention should be considered to be within the protection scope of the present invention.
As can be seen from above, with the exhaust method provided by the present invention, an ample supply of gas flow can be obtained at any region in the substrate processing chamber, to increase uniformity of the processed substrates; moreover, since the above exhaust method is easy to be implemented and it is not required to provide a complex partition plate mechanism in the substrate processing chamber, the problem of particle contamination caused by the partition plate mechanism may be avoided efficiently; moreover, the exhaust method provided by the present invention can be applied to substrate processing apparatuses of various volumes and can achieve the same exhaust effect.
As an alternative technical solution, an exhaust device provided by the present invention is also used to cooperate with the substrate processing chamber to exhaust gas. The exhaust device includes at least two exhaust ports connected to the substrate processing chamber, wherein, the exhaust speed of the respective exhaust ports can be controlled individually. In this way, by means of the above at least two exhaust ports of which the exhaust speed can be individually controlled, a plurality of gas flow directions can be formed in the substrate processing chamber and flow rate in the various gas flow directions can be adjusted in a real-time manner according to requirements, to obtain an ample gas flow at any region in the chamber and in turn increase uniformity of the process results. Moreover, using the exhaust device provided by the present invention to exhaust gas, it is not required to provide a complex partition plate mechanism, avoiding the problem of particle contamination caused by the partition plate mechanism. Moreover, as for substrate processing chambers of various volumes, the exhaust device provided by the present invention can be used to exhaust gas, and a relatively uniform gas flow distribution can also be formed in each substrate processing chamber.
Please referring to Figs.3 and 4 together, wherein, Fig.3 is a principal block diagram of an exhaust device according to the first embodiment of the present invention; Fig.4 is a schematic structural view of the exhaust device of the embodiment illustrated in Fig.3. As shown in Figs. 3 and 4, the exhaust device in the present embodiment includes four exhaust ports 36 (i.e. 36-1, 36-2, 36-3 and 36-4) provided on the sidewall of the substrate processing chamber 13, the exhaust ports 36 are connected to dedicated and individual gas extraction devices respectively, and the exhaust speed of the respective exhaust ports 36 are adjusted by adjusting gas extraction speed of the respective gas extraction devices. As shown in Fig.4, the above gas extraction device may be a gas extraction pump, the present invention is not limited thereto and other gas extraction devices are applicable. In the present embodiment, since four exhaust ports are evenly provided around the chamber and each exhaust port is connected to one gas extraction pump, so when gas extraction speed of these four gas extraction pumps are successively controlled in the order in a clockwise or counterclockwise direction so that the gas extraction speed of the respective gas extraction pumps is gradually increased on by one, a rotatable and dynamic gas flow distribution may be formed in the chamber.
It should be pointed out that, in order to form the above rotatable gas flow, it is only required to meet a condition that at least three exhaust ports are dispersedly provided around the chamber, so the number of the exhaust ports is not only limited to four illustrated in Fig.4, and may be three, five or more, which should also fall within the protection scope of the present invention.
Please referring to Fig.5, a principal block diagram of the exhaust device according to the second embodiment of the present invention is illustrated. As shown in Fig.5, in the present embodiment, based on the above embodiments illustrated in Figs.3 and 4, an individual cross section adjusting valve is provided in an exhaust pipe between each exhaust port and its corresponding gas extraction device, in this way, by adjusting the cross section adjusting valves in the respective exhaust pipes, exhaust cross-sectional areas of the respective exhaust ports are adjusted and exhaust speed of the respective exhaust ports are in turn adjusted. Of course, as for the exhaust device in the present embodiment, it is also possible to adjust exhaust speed of the : respective exhaust ports by adjusting the respective cross section adjusting valves and gas extraction speed of the respective gas extraction devices simultaneously.
Please referring to Fig.6, the principal block diagram of the exhaust device according to the third embodiment of the present invention is illustrated. In the present embodiment, the respective exhaust ports are connected to the same gas extraction device via the individual exhaust pipes respectively, a cross section adjusting valve is provided in each exhaust pipe, and the exhaust cross-sectional area of the respective exhaust ports is adjusted by adjusting the cross section adjusting valves in the respective exhaust pipes to adjust exhaust speed of the respective exhaust ports.
Please referring to Fig.7, the principal block diagram of the exhaust device according to the fourth embodiment of the present invention is illustrated. The present embodiment is different from the embodiment illustrated in Fig.6 only in that all the exhaust ports are collectively connected to the same cross section adjusting valve, to collectively control exhaust speed of the respective exhaust ports by the same cross section adjusting valve.
It is easy to understand that, in the respective exhaust devices according to the embodiments of the present invention, it is intended to adjust exhaust speed of the respective exhaust ports by adjusting gas flow rate per unit area and/ or exhaust cross-sectional area of the respective exhaust ports; then a dynamically changing gas flow distribution is formed in the substrate processing chamber by reasonably setting exhaust speed of the respective exhaust ports and making it vary dynamically with time. Preferably, a dedicated exhaust speed controlling module may be provided to control exhaust speed of the respective exhaust ports to enable the respective exhaust ports to exhaust gas outwards at different exhaust speed and enable exhaust speed of the respective exhaust ports to vary with time. In particular, with this exhaust speed controlling module, it is possible to enable exhaust speed of the respective exhaust ports to be largest successively in the order of the clockwise or counterclockwise direction along which these exhaust ports are arranged, in other words, the exhaust speed controlling module can control the exhaust speed of the respective exhaust ports to be largest successively along ' the clockwise or counterclockwise direction, to form a rotatable gas flow rotating along the clockwise or counterclockwise direction in the substrate processing chamber; of course, it is also possible fo form gas flow changing according to other rules or changing randomly etc. in the chamber using the exhaust speed controlling module. In a practical application, for example, the above exhaust speed controlling module may be implemented using a programmable controlling device such as a single chip microcomputer.
Please referring to Fig.8, a cross-sectional view of the first cross section adjusting valve used in the exhaust device provided by the present invention is illustrated. The cross section adjusting valve includes a valve body 51, a gas outlet 59 communicating with the valve body 51, at least three gas inlets 56 (56-1, 56-2, 56-3 and 56-4) which are dispersedly arranged and a rotatable valve core 52 provided inside the cross section adjusting valve; wherein, the gas outlet 59 is connected to one gas extraction device, and the at least three gas inlets 56 are correspondingly connected to the respective exhaust ports respectively; the rotatable valve core 52 is used to enable gas inlet speed of the respective gas inlets 56 to switch sequentially with time in a clockwise or counterclockwise direction, to enable exhaust speed of the respective exhaust ports correspondingly connected to the respective gas inlets 56 to switch sequentially in the clockwise or counterclockwise direction, that is, exhaust speed of the respective exhaust ports correspondingly connected to the respective gas inlets 56 are gradually changed along the clockwise direction or gradually changed along the counterclockwise direction, as the reference number 54 shown in Fig.8.
As shown in the Figure, in the present embodiment, the valve body 51 is configured to have the shape of a cylinder, the gas outlet 59 communicates with one end face of the cylindrical valve body 51, and a plurality of gas inlets 56 (four gas inlets 56-1, 56-2, 56-3 and 56-4 in this embodiment) communicate with the side face of the cylindrical valve body 51. In the present embodiment, it is preferable to make the four gas inlets 56 evenly distributed on the circumference of the valve body 51, and in a practical application, the number of the gas inlets 56 can also be decreased or increased according to requirements (there are at least two gas inlets; in some preferable embodiments, there are at least three gas inlets), and the gas inlets 56 are connected to the side face of the valve body 51 in an uneven arrangement manner.
The valve core 52 is of a hollow tubular structure and can rotate around the central axis of the valve body 51. A through hole 53 is provided on the side face of the tubular valve core 52, the gas inlets 56 communicate with the gas outlet 59 via the through hole 53, and there is a certain gap 55 between the valve core 52 and the valve body 51. The gas inlet 56 facing directly toward the above through hole 53 can obtain the largest gas inlet speed, enabling the exhaust port connected with this gas inlet 56 to obtain the largest exhaust speed, as the reference number 57 shown in Fig.8; as the valve core 52 rotates, the respective gas inlets 56 obtain the largest gas inlet speed one by one, and accordingly the respective exhaust ports obtain the largest exhaust speed one by one. At the same time, the gas inlets 56 which have not faced directly toward the above through hole 53 can indirectly communicate with the above gas outlet 59 via the above gap 55, to obtain a relatively small gas inlet speed; and, flow rate of each gas inlet 56 may be also affected by the current distance of the position of the gas inlet 56 from the through hole 53 on the valve core 52. Taking the position of the valve core 52 shown in Fig. 8 as an example, the gas inlet 56-3 is farthest from the through hole 53, so its flow rate
P3 is smallest; and the gas inlet 56-1 is facing directly toward the through hole 53, so its flow rate P1 is the largest, and larger than that of the other gas inlets; flow rate P2 and flow rate P4 of the other two gas inlets 56-2 and 56-4 are between the flow rate P1 and the flow rate P3.
It should be understood that, the number of the through hole 53 on the above valve core 52 is not limited to one in the present embodiment and may be increased according to requirements so that two or more gas inlets 56 can obtain the largest flow rate simultaneously; moreover, on basis of providing a plurality of through holes 53 on the valve core 52, the through holes 53 are set to have cross sections of different sizes, so that the flow rate of the respective gas inlets 56 may be controlled by the sizes of cross sections of the respective through holes 53; in addition, the through hole 53 in the present embodiment may be of other shapes, as long as the used shape meets the condition that the fluid can pass through smoothly.
In addition, the cross section adjusting valve includes a valve core driving part for driving the valve core to rotate at a predetermined speed along a predetermined direction (not shown in the Figures). In a practical application, the above valve core driving part may be implemented by various devices, such as an electric motor, a hydraulic motor. Moreover, the above valve core driving part may be controlled by preset computer program to control parameters such as the rotation direction and speed of the valve core, and the varying frequency of the rotation direction and/or speed of the valve core, to meet requirements in different processes.
Please referring to Fig.9, a schematic structural view of the cross section adjusting valve according to the second embodiment of the present invention is illustrated. In particular, Fig.9(A) is a front cross-sectional view of the cross section adjusting valve provided by the present embodiment; and Fig.9(B) is a left view of the cross section adjusting valve provided by the present embodiment. As shown in the Figures, the shape of the valve body 61 is similar to that of the valve body 51 in the above embodiment illustrated in Fig.
8, the gas outlets 67 are provided on the side face of the cylindrical valve body 61, four gas inlets 66 (66-1, 66-2, 66-3 and 66-4) are evenly provided on one end face of the valve core 61 and distances of the respective gas inlets 66 from the center of the circular end face, on which the gas inlets 66 are located, are substantially identical with each other.
In the present embodiment, the valve core 62 is configured to be a disc and corresponding to positions of the gas outlet 67 and the gas inlets 66, the valve core 62 is provided with a through hole 63 for communicating the gas outlet 67 with the gas inlets 66. Distance of the through hole 63 from the rotational axis of the valve core 62 is approximately the same as those of the gas inlets 66 from the rotational axis so that the through hole 63 faces directly toward the respective gas inlets 66 one by one when the valve core 62 is rotating. When any gas inlet 66 is facing directly toward the through hole 63, flow rate p of the gas inlet 66 will reach the largest value. Therefore, as the valve core 62 rotates, the gas inlets 66 may obtain the largest flow rate one by one. In the present embodiment, the valve core 62 and the valve body 61 have a certain gas 65 therebetween, to allow the gas inlets 66 which have not reached the largest flow rate to communicate with the gas outlet 67 with relatively small flow rate. In addition, in the present embodiment, an electric motor is used to function as the valve core driving part 68 for driving the valve core 62 to rotate at a predetermined speed in a predetermined rotation direction. It is obvious that, the cross section adjusting valve in the present embodiment has the same or similar working principle as that of the above cross section adjusting valve illustrated in Fig.8 and the only difference : therebetween is the structure of the valve core as well as positions of the gas inlets 66 and the gas outlet 67, therefore the same exhaust effect can be achieved.
Fig.10 is a cross-sectional view of the third cross section adjusting valve used in the exhaust device provided by the present invention. In the present embodiment, the valve body 71 of the cross section adjusting valve is provided with four gas inlets 76 (i.e. 76-1, 78-2, 76-3 and 76-4) thereon, and a rotatable valve core 72 (i.e. 72-1, 72-2, 72-3 and 72-4} is provided in each gas inlet 76 respectively. Through controlling rotation of the respective valve cores 72, gas inlet speed of the respective gas inlets 76 can be individually controlled, and in turn exhaust speed of the respective exhaust ports are controlled individually.
Thus, the cross section adjusting valve illustrated in Fig.10 adjusts the exhaust speed in the same manner as that in the above embodiment illustrated in Fig.6, 5s therefore the description thereof is omitted.
It should be pointed out that, embodiments of the cross section adjusting valve provided by the present invention are not limited to the above embodiments, and a valve body and a valve core with appropriate structures should be considered to be within the protection scope of the present invention as long as they are developed from the principle and substance of the present invention and they can achieve the technical solution which functions the same as or similar to those in the above embodiments.
To sum up, with the exhaust device provided by the present invention, a dynamic gas flow distribution can be formed in the substrate processing chamber, to facilitating obtainment of uniform processed substrates. So, when the exhaust device provided by the present invention is used to exhaust gas : for the substrate processing chamber, the process gas can be distributed to regions above the substrates more uniformly, to facilitate obtainment of more uniform processed substrates; moreover, since the above exhaust device is simple in structure and it is not required to provide the complex partition plate mechanism in the substrate processing chamber, therefore problems such as the particle contamination caused by the partition plate mechanism can be avoided efficiently; furthermore, the exhaust device provided by the present invention can be applicable to substrate processing apparatuses with different volumes and achieve the same exhaust effect.
As another technical solution, the present invention also provides a substrate processing apparatus. Please referring to Fig.11, a schematic view of the substrate processing apparatus provided by the present invention is ilustrated. As shown in the Figure, the substrate processing apparatus includes a substrate processing chamber 13 and a substrate holding part 22 provided in the substrate processing chamber 13, and the above exhaust device provided by the present invention is also provided on the substrate processing chamber 13 to form a uniform gas flow above the substrate. In the present embodiment, the exhaust device includes exhaust ports 36 (i.e. 36-1, 36-2, 36-3 and 36-4) connected to the substrate processing chamber 13, a gas extraction device (not shown) and cross section adjusting valves provided between the exhaust ports 36 and the gas extraction device. Wherein, the respective gas inlets 56 (i.e. 56-1, 56-2, 56-3 and 56-4) of the cross section adjusting valves are correspondingly connected to the respective exhaust ports 36. During a process, a rotatable gas flow is formed in the substrate processing chamber 13 with rotation of the valve core 52, to obtain uniform processed substrates.
Please referring to Fig.12, a schematic view of the substrate processing apparatus according to one specific embodiment of the present invention is ilustrated. As shown in the Figure, in the present embodiment, a substrate processing chamber 100 provided with a single layer of tray 22 is used. The substrate processing chamber 100 is provided with a gas supply port 80 and four exhaust ports 36 (i.e. 36-1, 36-2, 36-3 and 36-4, and only 36-1 and 36-3 are visible in the cross-sectional view illustrated in Fig.12) evenly provided on : the circumference of the substrate processing chamber 100, wherein, the gas supply port 80 is approximately located above the center of the tray 22, and the four exhaust ports 36 are evenly distributed in the periphery of the tray 22. The above four exhaust ports 36 are the exhaust ports 36 of the above exhaust device provided by the present invention, and in the present embodiment, the respective exhaust ports 36 are correspondingly connected to the respective gas inlets 66 (i.e. 66-1, 66-2, 66-3 and 66-4, only 66-1 and 66-3 are visible in the cross-sectional view illustrated in Fig.12) of the rotary valve 200 functioning as the cross section adjusting valve, and the gas outlet of the rotary valve 200 is connected to a gas extraction device (in the present invention, a gas extraction pump is used as the gas extraction device), so an entire gas path is formed.
In the following, the working procedure of the above substrate processing apparatus provided by the present invention will be described in detail. First, substrates to be processed are placed at loading positions on the tray 22, process gas is then introduced into the substrate processing chamber 100 via the gas supply port 80 of the chamber, and at the same time the gas extraction pump and the rotary valve 200 are simultaneously operated to exhaust gas after reaction in chamber to the outside timely. Specifically, the gas extraction pump provides the gas outlet of the rotary valve 200 with a certain exhaust speed continuously and the valve core driving part 68 drives the valve core 62 to rotate at a certain rotation speed along a certain rotation direction. When the through hole 83 on the valve core 62 is facing directly toward a certain gas inlet 66 (for example the gas inlet 66-1 as illustrated in the Figure), the greatest gas inlet speed can be reached at this gas inlet 66, and accordingly the exhaust port 36-1 corresponding to this gas inlet 66 can form a relatively large exhaust speed compared to other exhaust ports (36-2, 36-3 and 36-4), to enable flow rate toward the exhaust port 36-1 to be larger than that of other directions in the substrate processing chamber 100; and with rotation of the valve core 62, gas flow corresponding to the respective exhaust ports 36 in the chamber will form the greatest gas flow successively, thus in the chamber a dynamic gas flow, which likes a rotating gas flow, is formed. Due to the rotating gas flow, all the regions of the respective substrates on the tray 22 can obtain ample gas supply, to efficiently ensure processed substrates with high quality. in the above procedure, both the gas extraction speed of the gas extraction pump and the rotation speed and direction of the rotary valve 200 can be controlled in a real-time manner by an exhaust speed controlling module, the specific control parameters may be determined based on actual requirements during the process and may also be determined based on beforehand experimental data.
It should be pointed out that, the exhaust device in the above embodiment illustrated in Fig.12 is not limited thereto and may be any one of the respective embodiments of the above exhaust device provided by the present invention.
Please referring to Fig.13, a cross-sectional view of a substrate processing chamber provided with a plurality of layers of trays used in the substrate processing apparatus provided by the present invention is illustrated.
As shown in the Figure, in the present embodiment, a plurality of layers of trays (four illustrated in the Fig.13, and the number of the layers is not limited in a practical application) are used to carry substrates, to increase production efficiency. In the substrate processing chamber 13, gas supply channels and exhaust channels can be provided to correspond to positions of the respective trays, and the detail is as follows. The above plurality of layers of trays are parallel to each other and are serially connected to the outer side of a support device 93 at intervals along the central axis direction of the chamber, the support device 93 is provided along the central axis of the chamber and configured to be hollow, a gas supply port 80 is provided at the bottom of the support device 93, a plurality of gas supply holes 94 are provided on the support device 93 along its length direction to correspond to positions where the respective trays are located, the inner part of the support device 93 and the respective gas supply holes 94 constitute a gas supply channel of the substrate processing apparatus. Correspondingly, a cylindrical inner wall 90 is provided in the substrate processing chamber 100 and a certain gap 91 is maintained between the inner wall 90 and the outer wall of the chamber, a plurality of through holes 92 are provided on the inner wall 90, thus the above is through holes 92 and the gap 91 together constitute the exhaust channel of the above substrate processing apparatus. The above exhaust device provided by the present invention is connected to the above exhaust channel through the exhaust ports 36 (i.e. 36-1, 36-2, 36-3, and 36-4; only 36-1 and 36-3 are illustrated in the cross-sectional view shown in Fig.13) provided on the outer wall of the chamber, to form a dynamic gas flow on the surfaces of the plurality of layers of trays 22 and to in turn achieve uniform process results.
It should also be pointed out that, although the gas supply channel and the gas supply ports are provided all around the substrate processing chamber in the above embodiment, the present invention is not limited thereto. For example, the gas supply channels are provided all around the substrate processing chamber and correspondingly, an exhaust channel is provided along the central axis of the substrate processing chamber. This technical solution is just to make the exhaust channel and the gas supply channel in the above embodiment act as the gas supply channel and the exhaust channel respectively.
To sum up, since the above exhaust device provided by the present invention is used in the substrate processing apparatus provided by the present invention to exhaust gas, an uniform process gas distribution can be achieved in the substrate processing chamber, and an ample gas supply can be obtained at each region in the chamber, to facilitate obtainment of uniform processed substrates; moreover, since the above exhaust device provided by the present invention is not limited to the chamber volume, the substrate processing apparatus provided by the present invention can be designed to be large scale apparatus with various volume specifications. it should be pointed out that, all the trays described in the above embodiments can be made of a circular graphite body and SiC attached to surface of the circular graphite body.
In a practical application, the above substrate processing apparatus is for example a metal-organic chemical vapor deposition apparatus. it should be understood that, the above embodiments are only the exemplary embodiments used to describe the principle of the present invention and the present invention is not limited thereto.
Any person skilled in the art can make various modifications and improvements without departing from the sprit and substance of the present invention, and these modifications and : improvements should be considered to be within the protection scope of the present invention.
Claims (1)
- WHAT |S CLAIMED IS:1. An exhaust method, for cooperating with a substrate processing chamber to exhaust gas, including: step 10) providing the substrate processing chamber with at least two exhaust ports and enabling exhaust speed of the respective exhaust ports to be controlled individually, step 20) enabling the at least two exhaust ports to exhaust gas outwards at different exhaust speed.2. The exhaust method according to claim 1, wherein in the step 20), enabling exhaust speed of the respective exhaust ports to vary with time.3. The exhaust method according to claim 2, wherein in the step 10), the number of the exhaust ports is at least three.4. The exhaust method according to claim 3, wherein in the step 20), enabling the exhaust speed of at least one exhaust port among the at least three exhaust ports to be larger than that of the other exhaust ports.5. The exhaust method according to claim 4, wherein in the step 20), enabling the exhaust speed of one exhaust port among the at least three exhaust ports to be larger than that of other exhaust ports and enabling exhaust speed of the other exhaust ports to be identical with each other.8. The exhaust method according to claim 4, wherein in the step 20), enabling the exhaust speed of one exhaust port to be larger than that of the other exhaust ports; and setting the exhaust speed of the other exhaust ports so that the larger the distance of an exhaust port from the exhaust port of which the exhaust speed is largest is, the smaller the exhaust speed thereof is.7. The exhaust method according to claim 4, wherein in the step 20),enabling the respective exhaust ports to successively achieve the largest exhaust speed in the order of the respective exhaust ports arranged in a clockwise or counterclockwise direction.8. The exhaust method according to claim 7, wherein in the step 20), enabling the exhaust speed of the respective exhaust ports to vary continuously; or enabling the exhaust speed of the respective exhaust speed to vary once every predetermined period of time.9. The exhaust method according to claim 8, wherein the predetermined period of time is a constant or a variable.10. An exhaust device, for cooperating with a substrate processing chamber to exhaust gas, wherein the exhaust device includes at least two exhaust ports connected to the substrate processing chamber, wherein the exhaust speed of the respective exhaust ports can be controlled individually.11. The exhaust device according to claim 10, wherein the number of the exhaust ports is at least three.12. The exhaust device according to claim 10, wherein gas flow speed per unit area and/or exhaust cross-sectional area of the respective exhaust ports are adjustable, and exhaust speed of the respective exhaust ports are adjusted by respectively adjusting gas flow speed per unit area and/or exhaust cross-sectional area of the respective exhaust ports,13. The exhaust device according to claim 12, wherein the respective exhaust ports are connected to respective dedicated gas extraction devices respectively, and the exhaust speed of the respective exhaust ports are adjusted by adjusting gas extraction speed of the respective gas extraction devices.14. The exhaust device according to claim 12, wherein the respective exhaust ports are connected to the same gas extraction device via individual exhaust pipes, each of the exhaust pipes is provided with a cross section adjusting valve and the exhaust cross-sectional area of the respective exhaust ports are adjusted by adjusting the cross section adjusting valves provided in the respective exhaust pipes so as to adjust exhaust speed of the respective exhaust ports.15. The exhaust device according to claim 12, wherein, the respective exhaust ports are connected to respective dedicated gas extraction devices via individual exhaust pipes, and each of the respective exhaust pipes is provided with a cross section adjusting valve; gas flow speed per unit area and/or exhaust cross-sectional area of the respective exhaust ports are adjusted by controlling the gas extraction speed of the respective gas extraction devices and/or adjusting the cross section adjusting valves so as to adjust the exhaust speed of the respective exhaust ports.16. The exhaust device according to any one of claims 10 to 15, further including an exhaust speed controlling module, for controlling the respective exhaust ports to exhaust gas outwards at different exhaust speed and enabling the exhausting speed of the respective ports to vary with time.17. The exhaust device according to claim 16, wherein the exhaust speed controlling module controls the exhaust speed of the respective exhaust ports to be largest successively in a clockwise or counterclockwise direction.18. The exhaust device according to claim 17, wherein the cross section adjusting valve includes one gas outlet, at least three dispersedly arranged gas inlets and a rotatable valve core provided inside the cross section adjusting valve; wherein the gas outlet is connected to one gas extraction device, and the at least three gas inlets are correspondingly connected to the respective exhaust ports; the rotatable valve core is used to enable gas inlet speed of the at least three gas inlets to rotate with time in a clockwise or counterclockwise direction to accordingly vary the exhaust speed of the exhaust ports correspondingly connected to the respective gas inlets.19. The exhaust device according to claim 18, further including a valve core driving part, for driving the valve core to rotate at a predetermined speed along a predetermined rotation direction.20. A substrate processing apparatus including a substrate processing chamber and a substrate holding part provided inside the substrate processing chamber, wherein further including an exhaust device according to any one of claims 10 to 19, for forming uniformly distributed gas flow over substrates.21. The substrate processing apparatus according to claim 20, wherein the substrate holding part includes at least two layers of trays arranged along the height direction of the substrate processing chamber, inside the substrate processing chamber, gas supply channels and exhaust channels : corresponding to positions of the respective layers of trays are provided and the exhaust device is connected to the exhaust channels.22. The substrate processing apparatus according to claim 21, wherein the gas supply channels are arranged along the central axis of the substrate processing chamber, and accordingly, the exhaust channels are arranged around the substrate processing chamber.23. The substrate processing apparatus according to claim 21, wherein the gas supply channels are arranged around the substrate processing chamber, and accordingly, the exhaust channels are arranged along the central axis of the substrate processing chamber.24. The substrate processing apparatus according to any one of claims 20 to 23, wherein the substrate processing apparatus is a metal-organic chemical vapor deposition apparatus.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110158466.0A CN102828167B (en) | 2011-06-13 | 2011-06-13 | Exhaust method, exhaust apparatus and substrate treatment equipment |
| PCT/CN2012/071266 WO2012171354A1 (en) | 2011-06-13 | 2012-02-17 | Exhausting method, exhausting apparatus and substrate processing device |
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| Publication Number | Publication Date |
|---|---|
| SG195006A1 true SG195006A1 (en) | 2013-12-30 |
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| SG2013084991A SG195006A1 (en) | 2011-06-13 | 2012-02-17 | Exhausting method, exhausting apparatus and substrate processing device |
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| Country | Link |
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| CN (1) | CN102828167B (en) |
| SG (1) | SG195006A1 (en) |
| WO (1) | WO2012171354A1 (en) |
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| CN106191812B (en) * | 2015-05-05 | 2019-01-22 | 中微半导体设备(上海)有限公司 | Chemical vapor deposition unit and the method for cleaning its exhaust outlet |
| CN105789092B (en) * | 2016-03-25 | 2019-06-28 | 京东方科技集团股份有限公司 | Substrate processing equipment |
| CN106764225A (en) * | 2016-12-06 | 2017-05-31 | 中核第四研究设计工程有限公司 | A kind of adjustable pipeline air exhaust water device |
| CN107057037A (en) * | 2017-04-21 | 2017-08-18 | 深圳市景方盈科技有限公司 | Epoxy resin manufacture method |
| CN109065431B (en) * | 2018-07-27 | 2020-11-24 | 上海华力集成电路制造有限公司 | Oxide gasification and removal device |
| CN109780873A (en) * | 2018-12-26 | 2019-05-21 | 合肥恒力装备有限公司 | One kind being applied to big dumping low oxygen content copper and burns furnace intake and exhaust processing unit |
| CN112992741A (en) * | 2021-03-04 | 2021-06-18 | 长江存储科技有限责任公司 | Semiconductor processing apparatus and exhaust method |
| CN114059043B (en) * | 2021-11-19 | 2023-10-03 | 新美光(苏州)半导体科技有限公司 | Air inlet mechanism and vapor deposition equipment |
| CN113818011B (en) * | 2021-11-25 | 2022-03-04 | 新美光(苏州)半导体科技有限公司 | Chemical vapor deposition reaction equipment |
| CN114990526B (en) * | 2022-06-01 | 2024-05-28 | 上海鑫华夏半导体设备有限公司 | High capacity CVD apparatus equipped with exhaust module unit |
| CN115074704A (en) * | 2022-07-27 | 2022-09-20 | 拓荆科技(上海)有限公司 | Spraying device |
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| JPS60132320A (en) * | 1983-12-21 | 1985-07-15 | Matsushita Electric Ind Co Ltd | Vapor-phase growing reaction pipe |
| JPS63118072A (en) * | 1986-11-06 | 1988-05-23 | Ishikawajima Harima Heavy Ind Co Ltd | Thin film forming device |
| JPH0281433A (en) * | 1988-09-19 | 1990-03-22 | Hitachi Ltd | Normal pressure cvd apparatus |
| JP2888253B2 (en) * | 1989-07-20 | 1999-05-10 | 富士通株式会社 | Chemical vapor deposition and apparatus for its implementation |
| JPH0917736A (en) * | 1995-06-30 | 1997-01-17 | Hitachi Ltd | Method and apparatus for manufacturing semiconductor |
| JP2976972B1 (en) * | 1998-07-31 | 1999-11-10 | 日本電気株式会社 | Gas rectifier |
| JP4660926B2 (en) * | 2001-01-09 | 2011-03-30 | 東京エレクトロン株式会社 | Single wafer processing equipment |
| US20050109276A1 (en) * | 2003-11-25 | 2005-05-26 | Applied Materials, Inc. | Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber |
| CN1239225C (en) * | 2003-12-09 | 2006-02-01 | 西北工业大学 | Method and apparatus for exhaust gas treatment in chemical vapor deposition / chemical gas phase penetration processes |
| JP2008103388A (en) * | 2006-10-17 | 2008-05-01 | Sharp Corp | Semiconductor manufacturing system |
| JP2008214712A (en) * | 2007-03-06 | 2008-09-18 | Canon Inc | Deposited film forming device |
| JP2009030122A (en) * | 2007-07-27 | 2009-02-12 | Canon Inc | Deposited film formation device, method for forming deposited film, and method for forming electrophotography photoreceptor |
| JP5086192B2 (en) * | 2008-07-01 | 2012-11-28 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP2010065238A (en) * | 2008-09-08 | 2010-03-25 | Canon Inc | Deposited film forming device and deposited film forming method |
| JP5257328B2 (en) * | 2009-11-04 | 2013-08-07 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
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2011
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2012
- 2012-02-17 WO PCT/CN2012/071266 patent/WO2012171354A1/en active Application Filing
- 2012-02-17 SG SG2013084991A patent/SG195006A1/en unknown
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| WO2012171354A1 (en) | 2012-12-20 |
| CN102828167B (en) | 2015-02-25 |
| CN102828167A (en) | 2012-12-19 |
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