SG187920A1 - Molybdenum (iv) amide precursors and use thereof in atomic layer deposition - Google Patents

Molybdenum (iv) amide precursors and use thereof in atomic layer deposition Download PDF

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Publication number
SG187920A1
SG187920A1 SG2013012679A SG2013012679A SG187920A1 SG 187920 A1 SG187920 A1 SG 187920A1 SG 2013012679 A SG2013012679 A SG 2013012679A SG 2013012679 A SG2013012679 A SG 2013012679A SG 187920 A1 SG187920 A1 SG 187920A1
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SG
Singapore
Prior art keywords
formula
nmeet
precursor
methyl
methylcyclopentadienyl
Prior art date
Application number
SG2013012679A
Other languages
English (en)
Inventor
Peter Nicholas Heys
Rajesh Odedra
Sarah Louise Hindley
Original Assignee
Sigma Aldrich Co Llc
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Filing date
Publication date
Application filed by Sigma Aldrich Co Llc filed Critical Sigma Aldrich Co Llc
Publication of SG187920A1 publication Critical patent/SG187920A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/60—Deposition of organic layers from vapour phase
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
SG2013012679A 2010-08-27 2011-08-25 Molybdenum (iv) amide precursors and use thereof in atomic layer deposition SG187920A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37769210P 2010-08-27 2010-08-27
PCT/US2011/049155 WO2012027575A1 (en) 2010-08-27 2011-08-25 Molybdenum (iv) amide precursors and use thereof in atomic layer deposition

Publications (1)

Publication Number Publication Date
SG187920A1 true SG187920A1 (en) 2013-03-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
SG2013012679A SG187920A1 (en) 2010-08-27 2011-08-25 Molybdenum (iv) amide precursors and use thereof in atomic layer deposition

Country Status (9)

Country Link
US (1) US9802220B2 (cg-RX-API-DMAC10.html)
EP (1) EP2609102B1 (cg-RX-API-DMAC10.html)
JP (1) JP5873494B2 (cg-RX-API-DMAC10.html)
KR (1) KR101847953B1 (cg-RX-API-DMAC10.html)
CN (1) CN103097394B (cg-RX-API-DMAC10.html)
IL (1) IL224618A (cg-RX-API-DMAC10.html)
SG (1) SG187920A1 (cg-RX-API-DMAC10.html)
TW (1) TWI549958B (cg-RX-API-DMAC10.html)
WO (1) WO2012027575A1 (cg-RX-API-DMAC10.html)

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Also Published As

Publication number Publication date
WO2012027575A1 (en) 2012-03-01
JP2013540893A (ja) 2013-11-07
TW201219405A (en) 2012-05-16
US20130196065A1 (en) 2013-08-01
KR101847953B1 (ko) 2018-04-11
EP2609102B1 (en) 2014-12-31
CN103097394B (zh) 2016-03-02
KR20130139866A (ko) 2013-12-23
EP2609102A1 (en) 2013-07-03
IL224618A (en) 2015-02-26
TWI549958B (zh) 2016-09-21
JP5873494B2 (ja) 2016-03-01
CN103097394A (zh) 2013-05-08
US9802220B2 (en) 2017-10-31

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