SG173621A1 - Ion source cleaning in semiconductor processing systems - Google Patents
Ion source cleaning in semiconductor processing systems Download PDFInfo
- Publication number
- SG173621A1 SG173621A1 SG2011057536A SG2011057536A SG173621A1 SG 173621 A1 SG173621 A1 SG 173621A1 SG 2011057536 A SG2011057536 A SG 2011057536A SG 2011057536 A SG2011057536 A SG 2011057536A SG 173621 A1 SG173621 A1 SG 173621A1
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- SG
- Singapore
- Prior art keywords
- cleaning
- cathode
- gas
- filament
- ion
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0209—Avoiding or diminishing effects of eddy currents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
- H01J2237/082—Electron beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Plasma & Fusion (AREA)
- Combustion & Propulsion (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2009/033754 WO2009102762A2 (en) | 2008-02-11 | 2009-02-11 | Ion source cleaning in semiconductor processing systems |
| PCT/US2009/053520 WO2010093380A1 (en) | 2009-02-11 | 2009-08-12 | Ion source cleaning in semiconductor processing systems |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG173621A1 true SG173621A1 (en) | 2011-09-29 |
Family
ID=42562402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011057536A SG173621A1 (en) | 2009-02-11 | 2009-08-12 | Ion source cleaning in semiconductor processing systems |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2396809A1 (zh) |
| KR (1) | KR101658975B1 (zh) |
| CN (2) | CN104217981B (zh) |
| SG (1) | SG173621A1 (zh) |
| TW (2) | TWI567775B (zh) |
| WO (1) | WO2010093380A1 (zh) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103189956B (zh) * | 2010-09-15 | 2018-06-22 | 普莱克斯技术有限公司 | 延长离子源寿命的方法 |
| US9093372B2 (en) * | 2012-03-30 | 2015-07-28 | Varian Semiconductor Equipment Associates, Inc. | Technique for processing a substrate |
| US9396902B2 (en) * | 2012-05-22 | 2016-07-19 | Varian Semiconductor Equipment Associates, Inc. | Gallium ION source and materials therefore |
| JP6201496B2 (ja) * | 2013-08-02 | 2017-09-27 | セントラル硝子株式会社 | Ｉｆ７由来フッ化ヨウ素化合物の回収方法及び回収装置 |
| US10170286B2 (en) | 2016-09-30 | 2019-01-01 | Axcelis Technologies, Inc. | In-situ cleaning using hydrogen peroxide as co-gas to primary dopant or purge gas for minimizing carbon deposits in an ion source |
| JP6529000B2 (ja) * | 2017-09-27 | 2019-06-12 | 日新イオン機器株式会社 | イオン源、イオン源の運転方法 |
| US10700207B2 (en) | 2017-11-30 | 2020-06-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device integrating backside power grid and related integrated circuit and fabrication method |
| JP2021524648A (ja) * | 2018-05-17 | 2021-09-13 | インテグリス・インコーポレーテッド | イオン注入システムのための四フッ化ゲルマニウムと水素の混合物 |
| US10784079B2 (en) | 2018-09-26 | 2020-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ion implantation system and source bushing thereof |
| US11791141B2 (en) | 2020-07-29 | 2023-10-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for residual gas analysis |
| KR102563298B1 (ko) | 2021-01-18 | 2023-08-03 | 주식회사 유진테크 | 박막의 불순물 제거방법 및 기판 처리 장치 |
| US11664183B2 (en) * | 2021-05-05 | 2023-05-30 | Applied Materials, Inc. | Extended cathode and repeller life by active management of halogen cycle |
| KR20240021841A (ko) * | 2021-06-01 | 2024-02-19 | 인피콘, 인크. | 질량 분광분석법을 사용한 라디칼의 검출 방법 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5370568A (en) * | 1993-03-12 | 1994-12-06 | Harris Corporation | Curing of a tungsten filament in an ion implanter |
| US5497006A (en) * | 1994-11-15 | 1996-03-05 | Eaton Corporation | Ion generating source for use in an ion implanter |
| US5943594A (en) * | 1997-04-30 | 1999-08-24 | International Business Machines Corporation | Method for extended ion implanter source lifetime with control mechanism |
| JP3836991B2 (ja) * | 1999-02-02 | 2006-10-25 | 三菱化学株式会社 | 製膜方法および磁気記録媒体の製造方法 |
| JP4374487B2 (ja) * | 2003-06-06 | 2009-12-02 | 株式会社Ｓｅｎ | イオン源装置およびそのクリーニング最適化方法 |
| CN1964620B (zh) * | 2003-12-12 | 2010-07-21 | 山米奎普公司 | 对从固体升华的蒸气流的控制 |
| US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
| JP2010503977A (ja) * | 2006-04-26 | 2010-02-04 | アドバンスト テクノロジー マテリアルズ，インコーポレイテッド | 半導体処理システムの洗浄方法 |
| US7853364B2 (en) * | 2006-11-30 | 2010-12-14 | Veeco Instruments, Inc. | Adaptive controller for ion source |
| TW200839829A (en) * | 2007-03-21 | 2008-10-01 | Advanced Micro Fab Equip Inc | Capacitance-coupled plasma chamber, structure and manufacturing method of gas distribution head, refurbishment and reuse method thereof |
-
2009
- 2009-08-12 WO PCT/US2009/053520 patent/WO2010093380A1/en active Application Filing
- 2009-08-12 CN CN201410367226.5A patent/CN104217981B/zh active Active
- 2009-08-12 EP EP09840155A patent/EP2396809A1/en not_active Withdrawn
- 2009-08-12 KR KR1020117020918A patent/KR101658975B1/ko active IP Right Grant
- 2009-08-12 SG SG2011057536A patent/SG173621A1/en unknown
- 2009-08-12 CN CN200980158194.5A patent/CN102396048B/zh active Active
- 2009-08-13 TW TW103120759A patent/TWI567775B/zh active
- 2009-08-13 TW TW098127518A patent/TWI463516B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20110128848A (ko) | 2011-11-30 |
| EP2396809A1 (en) | 2011-12-21 |
| TWI463516B (zh) | 2014-12-01 |
| TW201030792A (en) | 2010-08-16 |
| TW201438052A (zh) | 2014-10-01 |
| CN104217981A (zh) | 2014-12-17 |
| TWI567775B (zh) | 2017-01-21 |
| KR101658975B1 (ko) | 2016-09-23 |
| CN104217981B (zh) | 2018-01-09 |
| WO2010093380A1 (en) | 2010-08-19 |
| CN102396048B (zh) | 2014-08-27 |
| CN102396048A (zh) | 2012-03-28 |
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