SG157980A1 - Substrate drying - Google Patents

Substrate drying

Info

Publication number
SG157980A1
SG157980A1 SG200804789-6A SG2008047896A SG157980A1 SG 157980 A1 SG157980 A1 SG 157980A1 SG 2008047896 A SG2008047896 A SG 2008047896A SG 157980 A1 SG157980 A1 SG 157980A1
Authority
SG
Singapore
Prior art keywords
ipa
vapor
nitrogen
generator
vessel
Prior art date
Application number
SG200804789-6A
Inventor
Tan Say Wah
Koh Jian Pang
Fu Chun
Original Assignee
Right Ind Systems Engineering
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Right Ind Systems Engineering filed Critical Right Ind Systems Engineering
Priority to SG200804789-6A priority Critical patent/SG157980A1/en
Publication of SG157980A1 publication Critical patent/SG157980A1/en

Links

Landscapes

  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

The present invention relates to an apparatus and method for generating inert polar organic compound vapor to be used for drying electronic substrate, more particularly semiconductor wafer. The polar organic compound is isopropyl alcohol (IPA) and the inert nitrogen gas (N2). The apparatus is a vapor generator (10) comprising of a vessel which continuously receives IPA from an IPA supply (12) line. Amount of IPA in the vessel is maintained at a fixed quantity by continuous liquid level feedback control. An ultrasonic nebulizer is installed at the bottom of the IPA vapor generator (10) and it is powered by an external oscillator that generates ultrasonic oscillations. The ultrasonic nebulizer (11) generates ultrasonic energy which converts the IPA into fine particles, i.e. mist. The vapor generator also has an inlet for nitrogen supply (14). The nitrogen supplied into the generator (10) carries the IPA mist away to form an IPA and nitrogen vapor mixture. The mixture is then transported to a drying chamber (18) where the wafer is cleaned and dried. FIGURE 1 accompanies the abstract.
SG200804789-6A 2008-06-24 2008-06-24 Substrate drying SG157980A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SG200804789-6A SG157980A1 (en) 2008-06-24 2008-06-24 Substrate drying

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200804789-6A SG157980A1 (en) 2008-06-24 2008-06-24 Substrate drying

Publications (1)

Publication Number Publication Date
SG157980A1 true SG157980A1 (en) 2010-01-29

Family

ID=41591710

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200804789-6A SG157980A1 (en) 2008-06-24 2008-06-24 Substrate drying

Country Status (1)

Country Link
SG (1) SG157980A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050100481A (en) * 2004-04-14 2005-10-19 삼성전자주식회사 Apparatus for drying a wafer
KR20060057224A (en) * 2004-11-23 2006-05-26 삼성전자주식회사 Ipa vapor dryer
US20060151006A1 (en) * 2005-01-12 2006-07-13 Chang-Hyeon Nam Substrate dryer and a drying method
KR20060096806A (en) * 2005-03-04 2006-09-13 세메스 주식회사 Apparatus for wafer transaction

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050100481A (en) * 2004-04-14 2005-10-19 삼성전자주식회사 Apparatus for drying a wafer
KR20060057224A (en) * 2004-11-23 2006-05-26 삼성전자주식회사 Ipa vapor dryer
US20060151006A1 (en) * 2005-01-12 2006-07-13 Chang-Hyeon Nam Substrate dryer and a drying method
KR20060096806A (en) * 2005-03-04 2006-09-13 세메스 주식회사 Apparatus for wafer transaction

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