SG151076A1 - Illuminator controlled tone reversal printing - Google Patents

Illuminator controlled tone reversal printing

Info

Publication number
SG151076A1
SG151076A1 SG200402024-4A SG2004020244A SG151076A1 SG 151076 A1 SG151076 A1 SG 151076A1 SG 2004020244 A SG2004020244 A SG 2004020244A SG 151076 A1 SG151076 A1 SG 151076A1
Authority
SG
Singapore
Prior art keywords
printing
tone
sensitive material
radiation sensitive
reversal printing
Prior art date
Application number
SG200402024-4A
Other languages
English (en)
Inventor
Steven George Hansen
Den Broeke Douglas Joseph Van
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG151076A1 publication Critical patent/SG151076A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04D—ROOF COVERINGS; SKY-LIGHTS; GUTTERS; ROOF-WORKING TOOLS
    • E04D1/00—Roof covering by making use of tiles, slates, shingles, or other small roofing elements
    • E04D1/30—Special roof-covering elements, e.g. ridge tiles, gutter tiles, gable tiles, ventilation tiles
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04D—ROOF COVERINGS; SKY-LIGHTS; GUTTERS; ROOF-WORKING TOOLS
    • E04D1/00—Roof covering by making use of tiles, slates, shingles, or other small roofing elements
    • E04D1/34—Fastenings for attaching roof-covering elements to the supporting elements
    • E04D1/3402—Fastenings for attaching roof-covering elements to the supporting elements for ridge or roofhip tiles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • E—FIXED CONSTRUCTIONS
    • E04—BUILDING
    • E04D—ROOF COVERINGS; SKY-LIGHTS; GUTTERS; ROOF-WORKING TOOLS
    • E04D1/00—Roof covering by making use of tiles, slates, shingles, or other small roofing elements
    • E04D1/30—Special roof-covering elements, e.g. ridge tiles, gutter tiles, gable tiles, ventilation tiles
    • E04D2001/304—Special roof-covering elements, e.g. ridge tiles, gutter tiles, gable tiles, ventilation tiles at roof intersections, e.g. valley tiles, ridge tiles
    • E04D2001/305—Ridge or hip tiles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Civil Engineering (AREA)
  • Structural Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Printing Methods (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200402024-4A 2003-04-17 2004-04-14 Illuminator controlled tone reversal printing SG151076A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/417,342 US20040207829A1 (en) 2003-04-17 2003-04-17 Illuminator controlled tone reversal printing

Publications (1)

Publication Number Publication Date
SG151076A1 true SG151076A1 (en) 2009-04-30

Family

ID=32908333

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200402024-4A SG151076A1 (en) 2003-04-17 2004-04-14 Illuminator controlled tone reversal printing

Country Status (7)

Country Link
US (2) US20040207829A1 (de)
EP (1) EP1469352A3 (de)
JP (1) JP4109648B2 (de)
KR (1) KR100614292B1 (de)
CN (1) CN100582942C (de)
SG (1) SG151076A1 (de)
TW (1) TWI306993B (de)

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US7139064B2 (en) * 2003-06-23 2006-11-21 Samsung Electronics Co., Ltd. Optical system for providing a hexapole illumination and method of forming a photoresist pattern on a substrate using the same
US20050225740A1 (en) * 2004-03-31 2005-10-13 Padlyar Sushil D Light source for photolithography
US7372547B2 (en) * 2004-04-27 2008-05-13 Lsi Corporation Process and apparatus for achieving single exposure pattern transfer using maskless optical direct write lithography
DE102005004216A1 (de) * 2005-01-29 2006-08-03 Carl Zeiss Smt Ag Beleuchtungssystem, insbesondere für eine Projektionsbelichtungsanlage in der Halbleiterlithographie
KR100812090B1 (ko) * 2005-11-30 2008-03-07 동부일렉트로닉스 주식회사 마스크패턴 및 마스크패턴 형성방법
EP2013893A2 (de) * 2006-04-26 2009-01-14 Axcelis Technologies, Inc. Verfahren und systeme zur verfolgung von ionenstrahlteilchen und zur fokussierung eines ionenstrahls
US7510960B2 (en) * 2006-08-29 2009-03-31 International Business Machines Corporation Bridge for semiconductor internal node
US7709370B2 (en) 2007-09-20 2010-05-04 International Business Machines Corporation Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures
US8084862B2 (en) 2007-09-20 2011-12-27 International Business Machines Corporation Interconnect structures with patternable low-k dielectrics and method of fabricating same
US8618663B2 (en) 2007-09-20 2013-12-31 International Business Machines Corporation Patternable dielectric film structure with improved lithography and method of fabricating same
US20090121357A1 (en) * 2007-11-08 2009-05-14 International Business Machines Corporation Design structure for bridge of a seminconductor internal node
DE102008011501A1 (de) 2008-02-25 2009-08-27 Carl Zeiss Smt Ag Verfahren zum Betreiben eines Beleuchtungssystems einer mikrolithographischen Projektionsbelichtungsanlage
TW201202123A (en) * 2010-07-06 2012-01-16 Hirose Tech Co Ltd Manufacturing equipment of nano-scale structure array and production method
JP6955934B2 (ja) * 2017-09-07 2021-10-27 株式会社アマダ レーザ加工機
KR20240113965A (ko) * 2021-12-14 2024-07-23 에이에스엠엘 네델란즈 비.브이. 일정한 폭의 서브-분해능 어시스트 피처 결정을 위한 방법, 소프트웨어, 및 시스템

Citations (2)

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US5776660A (en) * 1996-09-16 1998-07-07 International Business Machines Corporation Fabrication method for high-capacitance storage node structures
US6042998A (en) * 1993-09-30 2000-03-28 The University Of New Mexico Method and apparatus for extending spatial frequencies in photolithography images

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US4973544A (en) * 1989-03-07 1990-11-27 Hughes Aircraft Company Method for reversing tone or polarity of pattern on integrated circuit substrate utilizing reverse casting by planarization
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US6042998A (en) * 1993-09-30 2000-03-28 The University Of New Mexico Method and apparatus for extending spatial frequencies in photolithography images
US5776660A (en) * 1996-09-16 1998-07-07 International Business Machines Corporation Fabrication method for high-capacitance storage node structures

Also Published As

Publication number Publication date
KR100614292B1 (ko) 2006-08-21
CN100582942C (zh) 2010-01-20
US7421677B2 (en) 2008-09-02
EP1469352A2 (de) 2004-10-20
TWI306993B (en) 2009-03-01
EP1469352A3 (de) 2006-09-06
CN1542555A (zh) 2004-11-03
US20050094121A1 (en) 2005-05-05
TW200426499A (en) 2004-12-01
US20040207829A1 (en) 2004-10-21
KR20040090924A (ko) 2004-10-27
JP4109648B2 (ja) 2008-07-02
JP2004320037A (ja) 2004-11-11

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