201202123 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種奈米級結構體陣列的製造設備與 量產方法，該製造設備與量產方法係供量產一種可大幅 提高光線穿透效率’但目前僅停留在實驗室生產階段之 奈米級結構體陣列，以使該奈米級結構體陣列可為光電 相關產業界所利用。 【先前技術】 今曰，發光二極體(Light-emitting diode ;以下簡稱 LED)之應用技術已有長足進展，然其發光效率卻面臨 開發瓶頸。造成LED發光效率受限的關鍵原因在於 LED之Ν·Ρ介面發光後，由於氮化鎵GaN之折射率（2.5) 大於空氣折射率（1)，部分光線根據Snaell’sLaw會在出 光介面發生全反射而累積於晶體中無法射出，導致LED 出光效率降低。 惟，近年來研究指出，「粗化」氮化鎵GaN，更精 確地來說，在氮化鎵GaN的表面上蝕刻一種結構具規 則性、且規格在光線波長以下之奈米級結構體陣列，可 使部份全反射之光線釋出出光介面，大幅改善LED出 光效率（以上研究論述出自下列論文：一、P.Lalanneand G. M. Morris, “ Antireflection behavior of silicon 201202123 subwavelength periodic structures for visible light, Nanotechnology 8, 53 (1997);二、Z. Yu, H. Gao, W. Wu， H. Ge, and S. Y. Chou, “Fabrication of large area subwavelength antireflection structures on Si using trilayer resist nanoimprint lithography and liftoff，” J. Vac. Sci. Technol. B 21，2874 (2003);三、C. Lee，Sam Y. Bae, S. Mobasser, and H. Manohara, “A novel silicon • nanotips antireflection surface for the micro sun sensor，” Nano Lett. 5, 2438 (2005))。 目前，所述之奈米級結構體陣列之製造僅限於實 驗室階段，尚無法大規模量產。請參閱第一圖，其係習 知技術中奈米級結構體製造方法之光路示意圖，如圖， 實驗室製造奈米級結構體的方法係利用一雷射光源 PA1產生一雷射光束LS’雷射光束LS透過擴束器PA2 • 增加直徑，再經過分光鏡PA3 —分為二成為兩束雷射 光束LSa與LSb ’雷射光束LSa與LSb分別藉由可旋 轉平面鏡PA4a與PA4b之反射投射至一工作面PA5上。 基於光的波動性，雷射光束LSa與LSb在工作面 PA5上會產生干涉效應，其中建設性干涉與破壞性干涉 的分布即在視覺上形成所謂的干涉條紋，同時，工作面 PA5上會以干涉條紋之形狀蝕刻出一奈米級結構體，其 中建設性干涉之處形成複數個蝕刻區。當該等蝕刻區中 201202123 任二者之間距小於光線之波長，即可令光線不發生全反 射而穿透工作面PA5，提升工作面PA5之光線穿透效 率。 為了使前述產業利用價值極高之奈米級結構體早 進入量產1¾丰又，本案發明人苦心研發出一種奈米級結 構體陣列之製造設備與量產方法，克服目前高成本、高 耗時的製作方式，使該奈米級結構體能早日大量生產以 • 為光電侧產業界所利用。 【發明内容】 本發明之目的為提供一種低成本、高產業利用價 值之奈米級結構體陣列的製造設備與量產方法，可以使 上述奈米級結構體陣列跳脫實驗室製造階段，被大量生 產以為光電相關產業界所利用。 ® 本發明之奈米級結構體陣列的製造設備（以下簡 稱製造設備），包含一雷射光源、一微面鏡（micro mirror)、一準直透鏡組（F_thetalens)與一微稜鏡結構 陣列。雷射光源產生一雷射光束，微面鏡以二個以上轉 動自由度（degree of freedom)轉動，微棱鏡結構陣列 包含沿一加工路徑排列之複數個微稜鏡結構，並設置於 準直透鏡組與一光阻層之間。其中，各微棱鏡結構為具 有二個以上入射面之多面體。 201202123 本發明之奈米級結構體陣列的量產方法（以下簡 稱置產方法），係使雷射光源所產生之雷射光束投射至 微面鏡，雷射光束經微面鏡反射至準直透鏡組，穿透準 直透鏡組後垂直於準直透鏡組射出，並依序投射至微棱 鏡結構陣列之複數個微稜鏡結構。 雷射光束自所投射之微稜鏡結構之二入射面射入 後，於微稜鏡結構中形成二個次雷射光束，該二個次雷 鲁射光束折射在光阻層上發生光干涉效應產生一組干涉 圖案。該組干涉圖案包含複數個蝕刻區，其中該等蝕刻 區中任二者之間距係小於該雷射光束之波長。透過蝕刻 (Etching)該等蝕刻區，可在光阻層上產生一奈米級結構 體。 由於微面鏡持續轉動，雷射光束會依序投射至微 稜鏡結構中之每一者，重複在光阻層上發生光干涉效 鲁 應’藉此對應该等微稜鏡結構產生複數組干涉圖案。最 後，蝕刻該複數組干涉圖案，可形成對應微稜鏡結構陣 列之奈米級結構體陣列。 在本發明之第一實施例中，製造設備更包含一反 射鏡，以在雷射光束穿透準直透鏡組後，將雷射光束反 射至該等微稜鏡結構中之一者。 同時’在本發明之第一實施例中，微稜鏡結構之 多面體係於頂端切平一遮光頂面，該遮光頂面以—遮光 201202123 材料覆蓋，以使雷射光束在射入入射面後，形成光線較 整齊均勻之次雷射光束。在本發明之第一實施例中，微 稜鏡結構之多面體為一楔型物包含該遮光頂面，遮光頂 面之二側面各為1 一第入射面與一第二入射面，模型物 之等腰梯形截面具有一上底χ、一下底D、一第一腰、 一第二腰與一高度Η。當雷射光束之寬度W與微稜鏡 結構之規格符合下列關係式：Η(1-1ί^)>〇，雷射光束 所形成之二個次雷射光束能在光阻層發生光干涉效 應。本實施例中，該組干涉圖案為一組干涉條紋。 在本發明之第二實施例中，微稜鏡結構之多面體 為一四角錐具有四入射面。而在本發明之第三實施例 中，微棱鏡結構之多面體為一截頂四角錐包含該遮光頂 面與四入射面。雷射光束經由該四入射面射入微稜鏡結 構後會形成四個次雷射光束折射在光阻層發生光干涉 效應產生該組干涉圖案。 相較於習知技術，本發明之奈米級結構體陣列的 製造設備及量產方法，可利用微面鏡將一雷射光束依序 投射至微棱鏡結構陣列中之複數個微稜鏡結構，在各微 棱鏡結構中形成二個以上次雷射光束折射至光阻層上 產生光干涉效應，藉以對應該等微棱鏡結構產生複數個 干涉圖案，透過I虫刻該複數組干涉圖案，可在短時間内 7 201202123 製造出對應微稜鏡結_列之_奈米級結構體陣列，本 發明之低縣的製造；^法可實際㈣於奈練結構體 之大量生產。 【實施方式】 本發明之奈米級結構斷_製造設備，可使一雷射 光束在短時間内於-光阻層重複發生干涉，藉以大量生 產複數個奈米級結構體，組成—奈米級結_陣列以供 產業界利用。以下將列舉三個較佳實施例以供本發明所 屬技術領域者可據以實施。 δ月參閱第二圖，其係本發明較佳實施例之第一實施例 中，奈米級結構體陣列的製造設備之光路示意圖。如第二圖 所示，本發明之奈米級結構體陣列的製造設備100(以下簡 稱製造設備100)包含一雷射光源i、一微面鏡(micr〇 mirror)2、一準直透鏡組（F_thetalens) 3、一反射鏡4 與一透光材料層5’其中透光材料層5上開設一微稜鏡 結構陣列510,並且透光材料層5設置於一光阻層6之 上方。 光阻層6由光阻劑（photo resist)構成。光阻劑可為 正光阻（positive photoresist)和負光阻（negative photoresist)中之一者，噴塗於包含氮化鎵GaN、藍寶石 基板與玻璃等各式半導體透光材料上方而形成所述光 201202123 阻層6。基於奈米光學原理，製造設備1〇〇在光阻層6 上蝕刻出奈米級結構體陣列後，即可改變下方半導體透 光材料之iiJ祕性，使半導體透光材_^led時 能提高出光效率；而應用於太陽能電池時，能提高太陽 光之入光效率。 透光材料層5設置於準直透鏡組3與光阻層6之間， 以玻璃或聚碳旨（PQlyearbQnate ;簡稱pG，光學塑膠 # 的-種）等透光材料射出成型複數個微稜鏡結構，形成所 述之微稜鏡結構陣列510。其中，該等微棱鏡結構沿一加 工路徑排列。 雷射光源1產生-雷射光束LS。本實施例中，假設所 要應用之半導體透光材料係用以製造出發光為波長55〇咖 之綠光的LED晶片，雷射光束LS所產生之干涉條紋之間隔 必須在22〇nm左右。因此，雷射光束Ls之波長必須落在 籲 40〇nm〜460而之間，實務上，通常選擇波長為4〇6而之半導 體雷射光作為f射絲LS。雷射光束LS被投射至微面鏡2， 微面鏡2以二個以上轉動自由度（degree 〇f freed〇m)轉 動，並將雷射光束LS反射至準直透鏡組3。 準直透鏡組3由二片準直透鏡組成，使自微面鏡2反 射之雷射光束LS在穿過垂直準直透鏡組3後，垂直於準直 透鏡組3射出，並投射至反射鏡4。接著，透過反射鏡4的 反射雷射光束LS投射至微禮鏡結構陣列〖ίο中複數個微 9 201202123 棱鏡結構中之一者。 母-個微稜鏡結構為-具有二個以上人射面之多面 體。如第三圖所顯示之微梭鏡結構之立體結構示意圖所示， 在本發明之第-實施例中，微棱鏡結構5ι為一横形物，模 开乂物八彡遮光頂面及-第一入射面與一第二入射面 512a(因圖面角度問題健示第二人射面砂），其中遮光 頂面511以-遮光材料52 蓋以達到遮住部分雷射光束LS % 之效果。 接著請參閱第四圖，並請一併參閱第二圖。第四圖係 本發明第一實施例中，微稜鏡結構之側面示意圖，並為第二 圖中圈A之放大示;t®。如細騎示，當f射光束叫受 射至微稜鏡結構51，遮光頂面511會遮擋雷射光束以之部 刀光線，雷射光束LS之其餘光線會分別經由遮光頂面mi 兩側之第一入射面512與第二入射面512a射入，在棱鏡結 籲 構51中形成二個次雷射光束LSI與LS2。 繼續參閱第四圖。微稜鏡結構51具有一等腰梯形戴 面’等腰梯形戴面具有一上底X、一下底D、一第一腰 (未標示）、一第二腰（未標示）與一高度H。當微稜 鏡結構51之規格與雷射光束LS的寬度W (圖未示） 之間存在下列關係式：H(l-)>0，次雷射光束LSI 與LS2經微棱鏡結構51折射至光阻層6後，會在光阻層 10 201202123 6發生光干涉效應。 請參閱第五圖，其係第一實施例中奈米級結構體 之放大示意圖。當光干涉效應發生時，其建設性干涉與 破壞性干涉之分布會在光阻層6上形成一組干涉圖 案，而二波干涉效應所產生之干涉圖案為一組干涉條 紋。其中，將欲以光阻顯影液沖洗掉之部分定義為複數 個姓刻區EA。若光阻層6為正級，烟區EA為曝 • 光部分，也就是建設性干涉之部分；若光阻層6為負光 阻钱刻區EA為未曝光部分，也就是破壞性干涉之部 分。以光阻顯影液將干涉條紋之蝕刻區EA蝕刻 (Etching)沖洗賴，即產生所叙奈米級結構體^。 回頭參閱第四圖’當雷射光束！^之波長為入，兩 個久雷射光束LSI與LS2之夾角為以，可推得干涉條紋 • 之週期為入=2smf。此時’可藉由控制波長λ與夾角 Θ,之大小，控制干涉條紋之蝕刻區ΕΑ中任二者之間的 距離j於雷射光束LS之波長^。如此，钱刻產生之奈 米級結構體62即具有增加出光效率之功效。 附帝一提地，微稜鏡結構51與光阻層6之間更可 冰日光罩（未!會製），光罩上開設複數個對應微稜鏡 結構51之方型限制口，使次雷射光束⑶與脱發生干 涉之區域’被限制於該方型限制口中之範圍内，藉以控 201202123 制奈米級結構體62之形狀。 所干圖，其係微面鏡之立體結構示意圖。如圖 使鏡本體21絲她U 1 ’微面鏡2之結構可 失者轴U 旋轉，其中參考軸Α與 轉Γ=目Γ直鲁鏡本體21可以：轉動自由度 =幸t 構為所屬技術領域者之通常知識， 非本案發明重點，故不多加贅述。 七圖本發明製造設備之狄圖所示，藉由微面鏡2 以二轉動自由度_猶，可將雷射光束ls以不同反射 角度反射’沿不同光路穿鮮直透餘3並經過反射鏡4 之反射’依序投射至㈣鏡結構_ 51()巾沿加工路徑排列 之微稜鏡結構51。 經過上述流程’可對應鮮微稜鏡結構51產生複數組 干涉圖案。最後，伽m等干涉_，可產生複數個奈米級 結構體62。由於微稜鏡結構陣列51〇具有一定尺寸規模， 製造設備1GG可透職面鏡2之躺，無稜鏡結構陣列 510中各彳政稜鏡結構51之分光與折射，使雷射光束u在光 阻層6上沿該等微棱鏡結構51之加工路徑重複發生干涉， 在短時間内製造如第八圖之奈米級結構體陣列之示音 圖所示，位置對應於微棱鏡結構陣列51〇之奈米級結構 體陣列620。藉由本發明之量產方法，奈米級結構體陣 列620可被大量、快速地生產。 12 201202123 附帶一提地，微稜鏡結構陣列5i〇亦可以儘包含一列 的微稜鏡結構51，透過水平移動該列微稜鏡結構51，同樣 可在光阻層6上製造出奈米級結構體陣列620。 接著，請參閱第九圖，其係本發明較佳實施例之第二 實施例中’微频:結構之立體結構示意圖。如圖所示，微稜 鏡結構51’為1角錐形，具有四人射面，圖中因角度問 題僅標示前方之二入射面512，與·。在本實施例中， 雷射光束LS自該四人射面射人，並在微稜鏡結構51，中形 成四個次雷射光束LS1，、LS2’、脱，與⑻，。該四個 次雷射光束LSI’、LS2,、LS3，與⑻，騎於光阻層（未 顯示）上發生四波干涉產生—組干涉圖案。 此時’干涉圖案不再為條紋狀，而形成形狀較複雜之 圖案，所產生之奈米級結構體也具有較精細之構造，因而較 第貫施例所產生之奈米級結構體具有更佳的提升出光效 率之功效。請參_十圖，其係第二實施例中奈米級 體之放大示意圖，如 如圖所不’干涉_包含複數個密隼 排列之圓形钱刻區， /、 蝕刻區EA經蝕刻後形成奉 級結構體62，。 、木 圖其係本發明較佳實施例之第= 例中，微稜鏡結構之立辨^ —貫知 構5Γ為-_打顺鏡結 ^ ^ ^ 叫包含一遮光頂面51Γ與四入Μ 面’圖中因角度問 入射 咫偟钻不則方之二入射面51 201202123 512a 。在本實施例中，由於遮光頂面511 ”可藉由遮光 材料52”遮蔽雷射光束LS之部份光線，使雷射光束α於 微稜鏡結構51，，中形成四個次雷射光束LSI”、LS2”、 LS3”與LS4”時，光線路徑會較第二實施例更加地整齊、 均勻’四波干涉形成干涉圖案所侧出之奈米級結構體之效 果，也會優於第二實施例中的奈米級結構體貶，。 閱第十一圖與第十二A圖，其係奈米級結構體陣 • 列運用於⑽之示意圖。如第十二圖所示，當LED 200之出 光表面210未餘刻奈米級結構體陣列62〇，部份出光會全反 射而未能射出出絲面21〇。然而，如第十A圖所示，當· 2〇〇’之出光表面210,上，具有奈米級結構體陣列62〇，原 本全反射之光線可射出出絲面210，，使LED 20〇,之出 光效率遠高於LED 200。 另外，奈米級結構體陣列620之應用並不僅限於led。 • 纟陽光透過玻璃進入太陽能電池的過程中，亦會發生僅有正 向太陽光線可以進入P-N半導體，而斜向光線會被反射導 致無法進入P-N半導體之問題。此時，若在玻璃上開設奈米 級結構體陣列620，可改善光穿透效率，大幅增加使太陽光 線進入P-N半導體的數量，使太陽能電池的效率增加。 最後’凊參閱第十三圖’其係本發明奈米級結構 體陣列的量產方法之簡易流程圖。奈米級結構體陣列 620的y產方法為：首先，將一雷射光束Ls投射至微 14 201202123 面鏡2(S101)，藉由微面鏡2將雷射光束ls反射至準 直透鏡組3(S102)。 雷射光束LS經由該準直透鏡組3後，垂直準直透 鏡組3射出（S103)，藉由一反射鏡4反射至微稜鏡結構 陣列510中之一微稜鏡結構51(S104)。雷射光束！^在 微棱鏡結構51中形成二個以上次雷射光束LS1與 LS2，次雷射光束LS 1與LS2折射在光阻層6發生光干 φ 涉效應形成一組干涉圖案（S105)。 由於微面鏡2持續轉動’雷射光束ls依不同反 射角度自微面鏡2反射出’並沿不同光路依序投射至卜 一加工路徑排列之複數個微稜鏡結構5i(si〇6)。如此， 可對應微棱鏡結構陣列510產生複數組干涉圖案 (S107)。最後蝕刻該等干涉圖案之蝕刻區EA，即產生 複數個奈米級結構體62組成奈米級結構體陣列 φ 620(S108)。 藉由以上較佳具體實施例之詳述，係希望能更加清楚 描述本發明之概無神，而並相上顧揭露的較佳具體 實施例來對本發明之範脅加以限制。相反地，其目的是希望 能涵蓋各種改變及具相等性的安排於本發明所欲申請之專 利範圍的範疇内。 【圖式簡單說明】 15 201202123 第一圖係習知技術中奈米級結構體製造方法之光 路示意圖； 第二圖係本發明第一實施例中，奈米級結構體陣 一 _製造設備之光路之示意圖； 第三圖係、本發明第一實施例中，微棱鏡結構之立 體結構示意圖；201202123 VI. Description of the Invention: [Technical Field] The present invention relates to a manufacturing apparatus and a mass production method for a nano-scale structure array, which is capable of mass production and can greatly improve light penetration. Efficiency 'but currently only in the laboratory production stage of the nano-scale structure array, so that the nano-scale structure array can be utilized by the optoelectronic related industry. [Prior Art] In the future, the application technology of Light-emitting diode (LED) has made great progress, but its luminous efficiency is facing a development bottleneck. The key reason for the limitation of LED luminous efficiency is that after the LED 发光·Ρ interface emits light, since the refractive index (2.5) of gallium nitride GaN is larger than the refractive index of air (1), part of the light will be generated in the light-emitting interface according to Snaell's Law. The reflection does not occur in the crystal, which causes the LED light-emitting efficiency to decrease. However, in recent years, research has pointed out that "roughening" gallium nitride GaN, more precisely, etching a nano-structured array with regular structure and specifications below the wavelength of light on the surface of gallium nitride GaN It can release part of the total reflection light out of the light interface and greatly improve the LED light extraction efficiency. (The above research is from the following papers: 1. P.Lalanne and GM Morris, “Antireflection behavior of silicon 201202123 subwavelength periodic structures for visible light, Nanotechnology 8 , 53 (1997); 2, Z. Yu, H. Gao, W. Wu, H. Ge, and SY Chou, “Fabrication of large area subwavelength antireflection structures on Si using trilayer resist nanoimprint lithography and liftoff,” J. Vac Sci. Technol. B 21, 2874 (2003); C. Lee, Sam Y. Bae, S. Mobasser, and H. Manohara, “A novel silicon • nanotips antireflection surface for the micro sun sensor,” Nano Lett 5, 2438 (2005)) At present, the manufacture of the nano-structured array is limited to the laboratory stage, and mass production is not yet possible. Referring to the first figure, which is a schematic diagram of the optical path of the nano-scale structure manufacturing method in the prior art, as shown in the figure, the method for manufacturing the nano-scale structure in the laboratory uses a laser light source PA1 to generate a laser beam LS' The beam LS is transmitted through the beam expander PA2. • The diameter is increased, and then split into two by the beam splitter PA3 to become the two laser beams LSa and LSb. The laser beams LSa and LSb are respectively projected by the reflection of the rotatable plane mirrors PA4a and PA4b. On the working surface PA5. Based on the volatility of the light, the laser beams LSa and LSb will have an interference effect on the working surface PA5, wherein the distribution of the constructive interference and the destructive interference form a so-called interference fringe visually. A nano-scale structure is etched in the shape of the interference fringe on the working surface PA5, wherein a plurality of etched regions are formed at the constructive interference. When the distance between the two is less than the wavelength of the light in 201202123 The light is not totally reflected and penetrates the working surface PA5, thereby improving the light penetration efficiency of the working surface PA5. In order to make the nano-structures with extremely high utilization value of the above-mentioned industries enter mass production as early as possible, the inventors of this case painstakingly developed a manufacturing equipment and mass production method of a nano-scale structure array to overcome the current high cost and high consumption. The production method of the time enables the nano-scale structure to be mass-produced at an early date to be utilized by the photovoltaic side industry. SUMMARY OF THE INVENTION The object of the present invention is to provide a low-cost, high industrial utilization value nano-structure array manufacturing apparatus and mass production method, which can make the above-mentioned nano-scale structure array jump off the laboratory manufacturing stage, Mass production is used by the optoelectronic related industry. The manufacturing apparatus of the nano-scale structure array of the present invention (hereinafter referred to as manufacturing equipment) comprises a laser light source, a micro mirror, a collimating lens group (F_thetalens) and a micro-array structure array. . The laser source generates a laser beam, and the micro-mirror rotates with two degrees of freedom of rotation. The array of microprism structures comprises a plurality of micro-turn structures arranged along a processing path and is disposed on the collimating lens. Between the group and a photoresist layer. Wherein, each microprism structure is a polyhedron having two or more incident faces. 201202123 The mass production method of the nano-scale structure array of the present invention (hereinafter referred to as the production method) is to project a laser beam generated by a laser light source to a micro-mirror, and the laser beam is reflected to the collimation through the micro-mirror The lens group, after penetrating the collimating lens group, is emitted perpendicular to the collimating lens group and sequentially projected to a plurality of micro-twist structures of the microprism structure array. After the laser beam is incident on the incident surface of the projected micro-twist structure, two secondary laser beams are formed in the micro-turn structure, and the two sub-lulu beams are refracted to interfere with light on the photoresist layer. The effect produces a set of interference patterns. The set of interference patterns includes a plurality of etched regions, wherein the distance between any of the etched regions is less than the wavelength of the laser beam. By etching these etched regions, a nanoscale structure can be produced on the photoresist layer. As the micro-mirror continues to rotate, the laser beam is sequentially projected to each of the micro-twisted structures, and the optical interference effect on the photoresist layer is repeated, thereby generating a complex array corresponding to the micro-structure. Interference pattern. Finally, the complex array interference pattern is etched to form a nano-scale structure array corresponding to the micro-array structure array. In a first embodiment of the invention, the manufacturing apparatus further includes a mirror to reflect the laser beam to one of the micro-twist structures after the laser beam has passed through the collimating lens group. Meanwhile, in the first embodiment of the present invention, the multi-faceted system of the micro-twisted structure is cut at the top to cover a light-shielding top surface, and the light-shielding top surface is covered with a light-shielding 201202123 material so that after the laser beam is incident on the incident surface, Forming a uniform laser beam with uniform light. In the first embodiment of the present invention, the polyhedron of the micro-twist structure is a wedge-shaped object including the light-shielding top surface, and the two side surfaces of the light-shielding top surface are each a first incident surface and a second incident surface, and the model object The isosceles trapezoidal section has an upper bottom, a lower base D, a first waist, a second waist and a height Η. When the width W of the laser beam and the specification of the micro-turn structure conform to the following relationship: Η(1-1ί^)>〇, the two laser beams formed by the laser beam can interfere with light in the photoresist layer. effect. In this embodiment, the set of interference patterns is a set of interference fringes. In the second embodiment of the present invention, the polyhedron of the micro-turn structure has a quadrangular pyramid having four incident faces. In the third embodiment of the present invention, the polyhedron of the microprism structure is a truncated quadrangular pyramid including the shading top surface and the four incident surface. After the laser beam enters the micro-turn structure through the four incident planes, four sub-laser beams are formed to refract the optical interference effect in the photoresist layer to generate the set of interference patterns. Compared with the prior art, the manufacturing apparatus and the mass production method of the nano-scale structure array of the present invention can sequentially project a laser beam into a plurality of micro-稜鏡 structures in the array of microprism structures by using a micro-mirror. In the microprism structure, two or more laser beams are formed and refracted onto the photoresist layer to generate an optical interference effect, so that a plurality of interference patterns are generated corresponding to the microprism structure, and the complex array interference pattern is inscribed by the I insect. In a short time, 7 201202123, a nano-structure array corresponding to the micro-knot junction_column is produced, and the manufacturing of the low-counter of the present invention can be carried out in a large amount. [Embodiment] The nano-structured structure of the present invention can make a laser beam repeatedly interfere in the photoresist layer in a short time, thereby mass producing a plurality of nano-scale structures, and forming a nanometer. The cascade_array is used by the industry. Three preferred embodiments are listed below for implementation by those skilled in the art to which the invention pertains. Referring to the second figure, which is a schematic diagram of the optical path of the manufacturing apparatus of the nano-scale structure array in the first embodiment of the preferred embodiment of the present invention. As shown in the second figure, the manufacturing apparatus 100 of the nano-scale structure array of the present invention (hereinafter referred to as the manufacturing apparatus 100) includes a laser light source i, a micro mirror (mirror mirror) 2, and a collimating lens group. (F_thetalens) 3, a mirror 4 and a light transmissive material layer 5', wherein the light transmissive material layer 5 is provided with a micro 稜鏡 structure array 510, and the light transmissive material layer 5 is disposed above a photoresist layer 6. The photoresist layer 6 is composed of a photo resist. The photoresist may be one of a positive photoresist and a negative photoresist, and is sprayed on various semiconductor light-transmitting materials including gallium nitride GaN, sapphire substrate and glass to form the light 201202123 Resistive layer 6. Based on the principle of nano optics, after the fabrication equipment 1 etches the nano-scale structure array on the photoresist layer 6, the iiJ secret property of the lower semiconductor light-transmitting material can be changed, so that the semiconductor light-transmitting material can be _^led Improve light extraction efficiency; when applied to solar cells, it can improve the light entering efficiency of sunlight. The light transmissive material layer 5 is disposed between the collimating lens group 3 and the photoresist layer 6 and is formed by a transparent material such as glass or polycarbon (PQlyearbQnate; pG, optical plastic #) Structure, forming the array of micro-twisted structures 510. Wherein the microprism structures are arranged along a processing path. The laser source 1 produces a laser beam LS. In the present embodiment, assuming that the semiconductor light-transmitting material to be applied is used to manufacture an LED chip emitting green light having a wavelength of 55 Å, the interference fringes generated by the laser beam LS must be at intervals of about 22 Å. Therefore, the wavelength of the laser beam Ls must fall between 40 〇 nm and 460. In practice, the semiconductor laser light having a wavelength of 4 〇 6 is usually selected as the f-ray LS. The laser beam LS is projected onto the micro-mirror 2, which rotates with two or more degrees of rotational freedom (degree 〇f freed〇m) and reflects the laser beam LS to the collimating lens group 3. The collimating lens group 3 is composed of two collimating lenses, so that the laser beam LS reflected from the micro mirror 2 passes through the vertical collimating lens group 3, is perpendicular to the collimating lens group 3, and is projected to the mirror. 4. Then, the reflected laser beam LS transmitted through the mirror 4 is projected to one of the plurality of micro-2012 12123 prism structures in the array of micro-objective structures. The mother-small structure is a polyhedron having two or more human faces. As shown in the third embodiment of the micro-shock mirror structure shown in the third figure, in the first embodiment of the present invention, the microprism structure 5 is a horizontal object, the mold opening the eight-hole shading top surface and - first The incident surface and a second incident surface 512a (the second person's surface sand is displayed due to the problem of the plane angle), wherein the light-shielding top surface 511 is covered with the light-shielding material 52 to achieve the effect of blocking part of the laser beam LS %. Please refer to the fourth picture, and please refer to the second picture. The fourth figure is a schematic side view of the micro-twisted structure in the first embodiment of the present invention, and is an enlarged view of the circle A in the second figure; t®. As shown in the fine ride, when the f-beam is called to the micro-small structure 51, the shading top surface 511 blocks the laser beam and the other rays of the laser beam, and the remaining rays of the laser beam LS pass through the shading top surface mi. The first incident surface 512 and the second incident surface 512a are incident, and two secondary laser beams LSI and LS2 are formed in the prism junction 51. Continue to see the fourth picture. The micro-twisted structure 51 has an isosceles trapezoidal wear surface. The isosceles trapezoidal mask has an upper base X, a lower base D, a first waist (not shown), a second waist (not labeled) and a height H. When the specification of the micro-twist structure 51 and the width W (not shown) of the laser beam LS exist, the following relationship exists: H(l-)>0, and the sub-laser beams LSI and LS2 are refracted by the microprism structure 51. After the photoresist layer 6, an optical interference effect occurs on the photoresist layer 10 201202123 6 . Please refer to the fifth drawing, which is an enlarged schematic view of the nano-scale structure in the first embodiment. When the optical interference effect occurs, the distribution of constructive and destructive interference forms a set of interference patterns on the photoresist layer 6, and the interference pattern produced by the two-wave interference effect is a set of interference patterns. Among them, the portion to be washed away by the photoresist developer is defined as a plurality of surnames EA. If the photoresist layer 6 is a positive level, the smoke area EA is the exposed portion, which is the part of the constructive interference; if the photoresist layer 6 is the negative photoresist area, the EA is the unexposed portion, that is, the destructive interference. section. The etched region EA of the interference fringes is etched by the photoresist developer to etch the ray, thereby producing the Sna nanostructure. Look back at the fourth picture' when the laser beam! The wavelength of ^ is the input, and the angle between the two long laser beams LSI and LS2 is , and the interference fringes can be derived. The period is in = 2 smf. At this time, by controlling the wavelength λ and the angle Θ, the distance j between any two of the etching regions of the interference fringes is controlled to be the wavelength ^ of the laser beam LS. Thus, the nanostructures 62 produced by the money have the effect of increasing the light extraction efficiency. Attached to the emperor, there is an ice cover (not made) between the micro-structure 51 and the photoresist layer 6, and a plurality of square-shaped restricting ports corresponding to the micro-structure 51 are opened on the mask. The area where the laser beam (3) interferes with the de-interference is limited to the range of the square-shaped restriction port, thereby controlling the shape of the 201202123 nano-scale structure 62. The dried figure is a schematic view of the three-dimensional structure of the micro mirror. As shown in the figure, the mirror body 21 is wire-shaped, and the structure of the U 1 'micro-mirror 2 can be rotated by the missing axis U, wherein the reference axis Γ and the switch Γ = the target straight mirror body 21 can be: rotational freedom = fortunately t The general knowledge of the technical field is not the focus of the invention, so I will not repeat it. Figure 7 is a diagram showing the manufacturing apparatus of the present invention. By means of the micro-mirror 2 with two degrees of freedom _, the laser beam ls can be reflected at different reflection angles. The reflection of the mirror 4 is sequentially projected onto the (four) mirror structure _ 51 () the micro-twisted structure 51 arranged along the processing path. Through the above-described flow, a complex array interference pattern can be generated corresponding to the fresh 稜鏡 structure 51. Finally, gamma or the like interferes with _, and a plurality of nanoscale structures 62 can be produced. Since the micro-twist structure array 51 has a certain size scale, the manufacturing apparatus 1GG can lie through the face mirror 2, and the splitting and refraction of each of the puppet structures 51 in the innocent structure array 510 causes the laser beam u to The photoresist layer 6 repeatedly interferes along the processing path of the microprism structures 51, and in a short time, as shown in the sound diagram of the nanoscale structure array of the eighth figure, the position corresponds to the microprism structure array 51. A nano-scale structure array 620. With the mass production method of the present invention, the nanostructure array 620 can be produced in large quantities and quickly. 12 201202123 Incidentally, the micro-arc structure array 5i can also include a column of micro-structures 51, and the nano-structures 51 can be horizontally moved, and the nano-scale can also be fabricated on the photoresist layer 6. Structure array 620. Next, please refer to the ninth figure, which is a schematic view of the three-dimensional structure of the structure of the second embodiment of the preferred embodiment of the present invention. As shown, the microprism structure 51' has a pyramidal shape and has a four-person surface. In the figure, only the front two incident surfaces 512 are indicated by the angle problem. In the present embodiment, the laser beam LS is incident from the four-person plane, and four sub-laser beams LS1, LS2', 脱, and (8) are formed in the micro-turn structure 51. The four sub-laser beams LSI', LS2, LS3, and (8) are subjected to four-wave interference on the photoresist layer (not shown) to generate a group interference pattern. At this time, the interference pattern is no longer striped, and a more complicated shape is formed, and the resulting nano-scale structure also has a finer structure, and thus has a more nanostructure than that produced by the first embodiment. Good effect of improving light efficiency. Please refer to the _10 diagram, which is an enlarged schematic view of the nano-scale body in the second embodiment, as shown in the figure, does not interfere with the circular money engraving region including a plurality of densely arranged, /, after the etching region EA is etched A Feng-level structure 62 is formed. In the example of the preferred embodiment of the present invention, the microscopic structure is defined as a _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Μ Surface 'In the figure, the angle of incidence is not incident on the incident surface 51 201202123 512a. In this embodiment, since the light shielding top surface 511 ′′ can block part of the light of the laser beam LS by the light shielding material 52 ′′, the laser beam α is formed in the micro 稜鏡 structure 51, and four sub-beams are formed. When LSI", LS2", LS3" and LS4", the light path is more neat and uniform than the second embodiment. The effect of the four-wave interference forming the nano-scale structure on the side of the interference pattern is better than that of the first embodiment. The nanostructure structure in the second embodiment. Read Figure 11 and Figure 12A, which are diagrams of the nanoscale structure arrays used for (10). As shown in Fig. 12, when the light-emitting surface 210 of the LED 200 is not engraved with the nano-structure array 62, some of the light is totally reflected and the filament surface 21 is not emitted. However, as shown in FIG. 10A, when the light-emitting surface 210 of the surface is provided with the nano-structure array 62, the originally totally reflected light can be emitted out of the surface 210, so that the LED 20〇 The light extraction efficiency is much higher than that of the LED 200. In addition, the application of the nanoscale structure array 620 is not limited to LED. • When sunlight enters the solar cell through the glass, there is also the problem that only positive sun rays can enter the P-N semiconductor, and oblique light is reflected, which prevents access to the P-N semiconductor. At this time, if the nano-scale structure array 620 is provided on the glass, the light transmission efficiency can be improved, and the number of solar rays entering the P-N semiconductor can be greatly increased, and the efficiency of the solar cell can be increased. Finally, reference is made to Figure 13 which is a simplified flow diagram of a method of mass production of a nanoscale structure array of the present invention. The method for producing the nano-scale structure array 620 is: first, a laser beam Ls is projected onto the micro 14 201202123 mirror 2 (S101), and the laser beam ls is reflected by the micro-mirror 2 to the collimating lens group. 3 (S102). After the laser beam LS passes through the collimator lens group 3, the vertical collimating lens group 3 is emitted (S103), and is reflected by a mirror 4 to one of the micro-structures 51 of the micro-structure array 510 (S104). Laser beam! ^ Two or more sub-laser beams LS1 and LS2 are formed in the microprism structure 51, and the sub-laser beams LS 1 and LS2 are refracted in the photoresist layer 6 to form a set of interference patterns (S105). Since the micro-mirror 2 continues to rotate, the laser beam ls is reflected from the micro-mirror 2 according to different reflection angles, and is sequentially projected along different optical paths to a plurality of micro-稜鏡 structures 5i (si〇6) arranged in a processing path. . Thus, a complex array interference pattern can be generated corresponding to the microprism structure array 510 (S107). Finally, the etching regions EA of the interference patterns are etched, i.e., a plurality of nanostructures 62 are formed to constitute the nanostructure array φ 620 (S108). The detailed description of the preferred embodiments of the present invention is intended to provide a more detailed description of the embodiments of the invention. On the contrary, the intention is to cover various modifications and equivalents within the scope of the invention as claimed. [Brief Description] 15 201202123 The first figure is a schematic diagram of the optical path of the nano-structure manufacturing method in the prior art; the second figure is the nano-structured array in the first embodiment of the present invention A schematic diagram of a three-dimensional structure of a microprism structure in a first embodiment of the present invention;
第四圖係本發明第一實施例中，微棱鏡結構之側 面示意圖； 第五圖係、本發明第一實施例中，奈米級結構體之 放大示意圖； 第六圖係微面鏡之立體結構示意圖； 第七圖係本發明第一實施例中，奈米級結構體陣 列的製造設備之光路之示意圖； 第八圖係奈米級結構體陣列之示意圖； 第九圖係本發明第二實施例中，微複鏡結構之立 體結構示意圖； 第十圖係本發明第二實施例中，奈米級結構體之 放大示意圖； 第十一圖係本發明第三實施例中，微稜鏡結構之 立體結構示意圖； 第十二圖與第十二A圖係奈米級結構體陣列運用 於LED之示意圖；及 16 201202123 第十三圖係本發明奈米級結構體陣列的量產方法 之簡易流程圖。The fourth figure is a schematic side view of the microprism structure in the first embodiment of the present invention; the fifth figure is an enlarged schematic view of the nano-scale structure in the first embodiment of the present invention; 7 is a schematic view of an optical path of a manufacturing apparatus of a nano-scale structure array in the first embodiment of the present invention; FIG. 8 is a schematic diagram of an array of nano-scale structures; In the embodiment, a schematic view of a three-dimensional structure of a micro-replica structure; a tenth figure is an enlarged schematic view of a nano-scale structure in a second embodiment of the present invention; Schematic diagram of the three-dimensional structure of the structure; the twelfth and twelfth A diagrams of the nano-structure array applied to the LED; and 16 201202123 The thirteenth diagram is a mass production method of the nano-structure array of the present invention Simple flow chart.
【主要元件符號說明】 PA1 雷射光源 PA2 擴束器 PA3 分光鏡 PA4a, PA4b 可旋轉平面鏡 PA5 工作面 100 製造設備 200,200’ LED 210,210， 出光表面 1 雷射光源 2 微面鏡 21 鏡本體 3 準直透鏡組 4 反射鏡 5 透光材料層 510 微稜鏡結構陣列 51，51，，51” 微棱鏡結構 511，51Γ 遮光頂面 512, 512a，512，，512a，，512”， 512a”入射面 52, 52” 遮光材料 17 201202123 6 光阻層 620 奈米級結構體陣列 62, 62， 奈米級結構體 LS, LSa, LSb, 雷射光束 LS1，LS2，LS1，，LS2，.LS3，，LS4，， 次雷射光束 LSI，，，LS2，，· LS3，，，LS4” EA，EA， 餘刻區 A 參考轴 B 參考軸 <9, 夾角 X 上底 D 下底 H 南度[Main component symbol description] PA1 Laser source PA2 Beam expander PA3 Beam splitter PA4a, PA4b Rotatable plane mirror PA5 Working surface 100 Manufacturing equipment 200, 200' LED 210, 210, Light-emitting surface 1 Laser source 2 Micro-mirror 21 Mirror body 3 Collimation Lens group 4 Mirror 5 Light transmissive material layer 510 Micro 稜鏡 structure array 51, 51, 51" Microprism structure 511, 51 遮光 Shading top surface 512, 512a, 512, 512a, 512", 512a" Incidence surface 52 , 52" shading material 17 201202123 6 photoresist layer 620 nanostructure array 62, 62, nanostructures LS, LSa, LSb, laser beams LS1, LS2, LS1, LS2, .LS3,, LS4 ,, sub-laser beam LSI,,,LS2,,· LS3,,,LS4” EA,EA, residual area A reference axis B reference axis<9, angle X upper base D lower bottom H south
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